CN107885001A - 显示面板和包括该显示面板的无边框型显示器 - Google Patents
显示面板和包括该显示面板的无边框型显示器 Download PDFInfo
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- G—PHYSICS
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
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Abstract
本文中公开了能够提高栅极驱动器的操作可靠性的显示面板和包括该显示面板的无边框型显示器。显示面板允许光入射到被形成为具有GIP结构的栅极驱动器的至少一个栅极TFT上,以防止由于栅极TFT的阈值电压的正偏移而引起的栅极TFT的劣化,并且防止栅极驱动器的输出电流减小,从而提高栅极驱动器的操作可靠性。
Description
交叉引用
本申请要求2016年9月30日向韩国知识产权局提交的第10-2016-0126781号韩国专利申请的优先权,其全部内容通过引用并入本文。
技术领域
本发明涉及能够提高栅极驱动器的操作可靠性的显示面板以及包括该显示面板的无边框型显示器。
背景技术
在各种平板显示器之中,液晶显示器由于其诸如厚度薄、重量轻和功耗低的显著特征而被广泛应用于膝上型电脑、电视机、平板电脑、监视器、智能电话、便携式显示器和便携式信息装置。
液晶显示器包括液晶面板、向液晶面板提供光的背光单元以及驱动液晶面板和背光单元的多个驱动电路。多个驱动电路包括向液晶面板的每条栅极线施加栅极信号的栅极驱动电路和向液晶面板的每条数据线施加数据信号的数据驱动电路。栅极驱动电路以面板中栅极(GIP)的方式设置在液晶面板中并且包括由多个薄膜晶体管(TFT)构成的多个级。
参照图1,栅极驱动电路的每个级均包括控制上拉TFT Tup的Q节点、控制下拉TFTTpd1、Tpd2的QB节点以及多个开关TFT(未示出),这多个开关TFT响应于外部信号而在使QB节点放电时对Q节点充电或者在对QB节点充电时使Q节点放电。
如图1a所示,栅极驱动电路的每个级响应于起始信号而对Q节点充电,并且响应于时钟信号CLK而引导(bootstrap)Q节点的电位以使上拉TFT Tup导通,从而输出栅极信号Vg。然后,每个级响应于复位信号而将Q节点的电位从高电平降低到低电平,并且将电位保持在低电平达预定时间段。
这里,当使Q节点放电时,对每个级的QB节点充电,而当对Q节点充电时使每个级的QB节点放电。换句话说,在每个级,当Q节点具有高电位时,QB节点具有低电位,而当Q节点具有低电位时,QB节点具有高电位。
因此,在每个级,例如在下拉TFT Tpd1、Tpd2和一些开关TFT中,根据QB节点的电位而切换的TFT中累积正偏置应力PBTS。累积的PBTS随着液晶显示器的驱动时间的增加而增大。因此,受应力的TFT劣化,从而使TFT的阈值电压在正(+)方向上偏移。
为了解决这个问题,如图1a所示,典型的栅极驱动电路交替地驱动分别连接至每个级的两个QB节点QB1、QB2的两个下拉TFT Tpd1、Tpd2,以减少TFT的劣化。
近来,为了改善液晶显示器的响应,在液晶面板和栅极驱动电路中使用电子迁移率比非晶硅(a-Si:H)TFT的电子迁移率更高的氧化物TFT。
然而,氧化物TFT的阈值电压的负偏移量远远小于非晶硅TFT的阈值电压的负偏移量。因此,即使当栅极驱动电路的每个级由氧化物TFT构成时,如图1a所示,也无法减少TFT的劣化,从而使TFT的阈值电压在正(+)方向上偏移。
因此,栅极驱动电路的每个级的输出电流的大小由于累积的PBTS而减小,从而使栅极驱动电路的可靠性劣化。
发明内容
本发明的一个方面是提供一种能够提高栅极驱动器的操作可靠性的显示面板和包括该显示面板的无边框型显示器。
根据本发明的一个方面,一种显示面板包括彼此耦接的第一基板和第二基板以及设置在第一基板上的栅极驱动器。
第一基板可以包括设置有多个像素的显示区域和围绕显示区域的非显示区域。
栅极驱动器可以设置在第一基板的非显示区域中。栅极驱动器可以包括多个栅极TFT。
第二基板可以设置在第一基板的下方并且耦接至第一基板,其中,液晶层介于第一基板与第二基板之间。第二基板可以包括与设置在第一基板上的栅极驱动器相对应的黑色矩阵。黑色矩阵可以包括遮光区和透光区。黑色矩阵的透光区可以与栅极驱动器的多个栅极TFT中的至少一个栅极TFT相对应。
根据本发明的另一方面,一种无边框型显示器包括显示面板和向显示面板提供光的背光单元。
显示面板可以包括第一基板和第二基板,并且可以具有第二基板耦接至第一基板的下侧的倒装结构,其中,该第一基板具有设置在其非显示区域中的栅极驱动器,该第二基板包括与栅极驱动器相对应的黑色矩阵。
黑色矩阵可以包括遮光区和透光区。黑色矩阵的透光区可以与栅极驱动器的多个栅极TFT中的至少一个栅极TFT相对应。栅极驱动器的至少一个栅极TFT可以通过黑色矩阵的透光区接收来自背光单元的光。
本发明提供了一种显示面板和一种包括该显示面板的无边框型显示器,该显示面板允许光入射到被设置为在显示面板中具有GIP结构的栅极驱动器的至少一个栅极TFT上,从而防止栅极TFT的阈值电压沿正方向偏移。
根据本发明,显示面板可以防止由于累积的PBTS而引起的栅极驱动器的每个级的栅极TFT的劣化,并因而可以防止输出电流减小,从而提高栅极驱动器的操作可靠性。
此外,根据本发明的显示面板具有阵列基板设置在滤色器基板的上侧的倒装结构,从而不需要隐藏形成在阵列基板的非显示区域中的焊盘和连接至该焊盘的软膜的单独部件。因此,根据本发明的显示器在其四面可以是无边框的,从而改善外观。
附图说明
从结合附图对以下实施例的详细描述中,本发明的上述和其他方面、特征和优点将变得显而易见,在附图中:
图1a是典型的栅极驱动电路的级的示意图;
图1b是示出图1a的级的一般驱动时序的图;
图2是根据本发明的一个实施例的无边框型显示器的图;
图3是沿着图2的线III-III'得到的截面图;
图4是图2的栅极驱动器的图;
图5是图4的栅极驱动器的多个级中的一个级的内部配置的图;
图6是示出典型栅极TFT和根据本发明的栅极TFT的电压-电流特性
的曲线图;以及
图7是示出典型栅极驱动器和根据本发明的栅极驱动器的阈值电压特
性的曲线图。
具体实施方式
在下文中,将参照附图详细描述本发明的实施例。
图2是根据本发明的一个实施例的无边框型显示器的图,以及图3是沿着图2的线III-III'得到的截面图。
参照图2和图3,根据本实施例的显示器100可以包括显示面板110和驱动显示面板的多个驱动电路。
显示面板110可以包括显示区域A/A和围绕显示区域A/A的多个非显示区域N/A。多个像素P可以设置在显示面板110的显示区域A/A中。栅极驱动器120可以设置在显示面板110的多个非显示区域N/A中的至少一个非显示区域中。此外,连接至柔性膜(未示出)的焊盘(未示出)可以形成在另一非显示区域N/A中,其中,柔性膜将显示面板110连接至其上安装有定时控制器140等的印刷电路板(未示出)。
如图3所示,显示面板110可以是如下的液晶面板,在该液晶面板中,第一基板(例如,阵列基板210)接合至第二基板(例如,滤色器基板220),其中,液体晶体层230介于第一基板与第二基板之间。阵列基板210可以通过密封剂240等接合至滤色器基板220。这里,栅极驱动器120可以设置在非显示区域N/A中的、在显示区域A/A与设置有密封剂240的区域之间的阵列基板210上。焊盘可以设置在非显示区域N/A中的、设置有密封剂240的区域外部的阵列基板210上。换句话说,由于需要将焊盘设置在非显示区域N/A中的阵列基板210上,因此显示面板110的阵列基板210可以在其至少一边延伸超过滤色器基板220。可以将焊盘暴露于外部。
由于根据本实施例的显示器100是无边框型显示器,因此显示面板110可以具有倒装结构。
典型的显示面板具有阵列基板置于滤色器基板的下侧的结构。相反,根据本实施例的显示面板110可以具有如下的倒置结构,其中,由像素P、栅极驱动器120等构成的阵列基板210设置在滤色器基板220的上侧。
因此,背光单元(未示出)可以设置在滤色器基板220的背面上,以向显示面板110提供光。此外,形成在阵列基板210的非显示区域N/A中的焊盘可以设置在显示面板110的向后方向上。
因此,根据本实施例的显示器100可以消除提供隐藏阵列基板210的焊盘的单独部件(诸如顶壳)的需求,并且因此在其四边可以是无边框的。
阵列基板210可以包括设置在电介质基板211上的栅极驱动器120和多个像素P。
多个像素P可以设置在阵列基板210的显示区域A/A中。多个像素P中的每个像素可以设置在显示区域A/A中的由相互交叉的多条栅极线GL和多条数据线DL限定的每个区域中。每个像素P均可以包括连接至栅极线GL和数据线DL的薄膜晶体管,例如,像素TFT P_TFT。
像素TFT P_TFT可以包括连接至栅极线GL的栅电极212a、连接至数据线DL的源电极214a和通过接触孔(未示出)连接至像素电极219a的漏电极214b。此外,像素TFT P_TFT可以包括有源层213,该有源层213通过提供给栅电极212a的电压(例如栅电压)而在源电极214a与漏电极214b之间形成导电沟道。
像素TFT P_TFT的有源层213可以由氧化物形成以提高响应速度。也就是说,像素TFT P_TFT可以是包括氧化物有源层213的氧化物TFT。然而,应当理解,本发明不限于此,并且像素TFT P_TFT的有源层213可以由非晶硅薄膜、多晶硅薄膜和氧化物半导体中的任何一个形成。
栅极绝缘膜215可以形成在像素TFT P_TFT的栅电极212a与有源层213之间。层间绝缘膜216和平坦化膜217可以依次形成在像素TFT P_TFT的源电极214a/漏电极214b上。保护膜218可以形成在平坦化膜217上。
像素电极219a可以形成在保护膜218上,以通过接触孔连接至像素TFT P_TFT的漏电极214b,并且可以具有预定的狭缝结构。此外,公共电极219b可以形成在平坦化膜217上,以与像素电极219a一起产生边缘场。公共电极219b可以在平坦化膜217的除了接触孔外的整个表面之上以单一图案形成。然而,应当理解,本发明不限于此,并且公共电极219b可以具有狭缝结构。
像素TFT P_TFT可以响应于通过栅极线GL从栅极驱动器120提供的栅极信号(即,栅电压)而导通,并且通过数据线DL将从数据驱动器130提供的数据信号(即,数据电压)提供给像素电极219a。此外,像素TFT可以通过由像素电极219a和公共电极219b形成的电场来激活液晶层230的多个液晶分子以控制透光率,从而显示图像。
滤色器基板220可以包括设置在电介质基板221上的滤色器225和黑色矩阵223。
滤色器225可以设置在滤色器基板220的显示区域A/A中。滤色器225可以包括实现红色(R)、绿色(G)和蓝色(B)的多个子滤色器,颜色。
黑色矩阵223可以被设置成分离滤色器基板220的显示区域A/A中的多个子滤色器并阻挡来自背面的光。黑色矩阵223可以被设置为与阵列基板210的像素TFT P_TFT相对应。此外,黑色矩阵223可以设置在滤色器基板220的非显示区域N/A中,以与阵列基板210的栅极驱动器120相对应。
尽管在附图中未示出,但是在显示区域A/A中的像素TFT P_TFT或黑色矩阵223上设置间隔物(未示出),以保持阵列基板210与滤色器基板220之间的距离。
多个驱动电路可以包括定时控制器140、数据驱动器DL和栅极驱动器120。栅极驱动器120可以以面板中栅极(GIP)的方式设置在阵列基板210的至少一个非显示区域N/A中。
定时控制器140可以响应于从外部系统(未示出)提供的定时信号TS而生成栅极控制信号GCS和数据控制信号DCS。栅极控制信号GCS可以被输出到栅极驱动器120,以及数据控制信号DCS可以被输出到数据驱动器130。
此外,定时控制器140可以通过根据显示面板110的分辨率布置从外部系统输入的图像信号RGB来生成图像数据DATA。图像数据DATA可以与数据控制信号DCS一起被输出到数据驱动器130。
数据驱动器130可以响应于从定时控制器140提供的数据控制信号DCS而根据图像数据DATA生成数据信号(即,数据电压)。数据电压可以通过显示面板110的多条数据线DL输出到显示区域A/A中的像素P。
栅极驱动器120可以响应于从定时控制器140提供的栅极控制信号GCS而生成栅极信号,即栅电压。栅电压可以通过显示面板110的多条栅极线GL顺序地输出到显示区域A/A中的像素P。栅极驱动器120可以设置在阵列基板210的非显示区域N/A中。
图4是图2的栅极驱动器的图。
参照图3和图4,栅极驱动器120可以包括分别生成并输出栅电压VG1至VG4的多个级ST1至ST4。级ST1至ST4中的每个级均可以包括多个薄膜晶体管,例如多个栅极TFT G_TFT。
栅极驱动器120的级ST1至ST4可以通过输出通道分别输出依次相移的多个栅电压VG1至VG4。从级ST1至ST4分别输出的多个栅电压VG1至VG4可以输出到显示区域A/A的多条栅极线GL,同时作为起始信号VST输入到后面的级之一并作为复位信号RST输入到前面的级之一。
换句话说,起始信号VST可以从定时控制器140输入到栅极驱动器120的最前面的两个级ST1、ST2。另一方面,从最后一级之前的级输出的栅电压可以作为起始信号VST输入到除了最前面的两个级ST1、ST2之外的其余级ST3、ST4中的每个级。例如,从定时控制器140输出的起始信号VST可以输入到栅极驱动器120的第一级ST1。另一方面,从第一级ST1输出的第一栅电压VG1可以作为起始信号VST输入到栅极驱动器120的第三级ST3。
此外,从下一级之后的级输出的栅电压可以作为复位信号RST输入到栅极驱动器120的级ST1至ST4中的每个级。例如,从第三级ST3输出的第三栅电压VG3可以作为复位信号RST输入到栅极驱动器120的第一级ST1。另一方面,复位信号RST可以从定时控制器140输入到栅极驱动器120的最后两级,或者从虚拟级输出的栅电压可以作为复位信号RST输入到栅极驱动器120的最后两级。
可以以与上述像素TFT P_TFT相同的处理形成栅极驱动器120的级ST1至ST4中的每个级的多个栅极TFT G_TFT。因此,栅极TFT G_TFT可以包括栅电极212a、有源层213、源电极214a和漏电极214b,其中,有源层213可以由氧化物形成。此外,栅极TFT G_TFT可以包括通过接触孔连接至漏电极214b的像素电极219a以及与像素电极219a一起产生边缘场的公共电极219b。栅极TFT G_TFT与像素TFT P_TFT不同之处在于,栅电极212a和源电极214a连接至多条信号线212b。这里,多条信号线212b用于将栅极控制信号GCS传送到栅极TFT G_TFT,并且可以与栅电极212a设置在同一层中。
此外,用于限定显示器100的边框的黑带部218可以附接至非显示区域N/A中的阵列基板210的、设置有栅极驱动器120的上表面。因此,栅极驱动器120和焊盘从显示面板的正面是不可见的。
黑色矩阵223可以设置在滤色器基板220的与设置在阵列基板210上的栅极驱动器120相对应的非显示区域N/A中,以与设置在阵列基板210的非显示区域N/A中的栅极驱动器120相对应。
设置在滤色器基板220的非显示区域N/A中的黑色矩阵223可以包括遮光区BM_C和透光区BM_O。栅极驱动器120的与黑色矩阵223的遮光区BM_C相对应的栅极TFT G_TFT不会接收来自滤色器基板220的背面的光。相反,栅极驱动器120的与黑色矩阵223的透光区BM_O相对应的栅极TFT G_TFT接收来自滤色器基板220的背面的光。
如上所述,在根据本实施例的显示面板110中,设置在滤色器基板220的非显示区域N/A中的黑色矩阵223包括透光区BM_O,以使得光可以入射到栅极驱动器120的与透光区相对应的至少一个栅极TFT G_TFT上,从而提高栅极驱动器120的操作可靠性。这是基于以下事实:形成栅极TFT G_TFT的沟道区的氧化物(即,有源层213)具有光诱导的负偏置应力(NBTS)。
换句话说,由于形成有源层213的氧化物的上述光学特性,通过黑色矩阵223的透光区BM_O接收光的栅极TFT G_TFT具有在负(-)方向上偏移的阈值电压。因此,栅极驱动器120可以防止多个栅极TFT G_TFT的阈值电压由于累积的PBTS而在正(+)方向上偏移。因此,可以防止栅极驱动器120的级ST1至ST4中的每个级的栅极TFT G_TFT劣化,并且防止输出电流的大小减小,从而提高操作可靠性。
此外,如参照图3所述,栅极驱动器120的与黑色矩阵223的透光区BM_O相对应的栅极TFT G_TFT具有与像素TFT P_TFT的结构基本上相同的结构。因此,在连接至栅极TFT G_TFT的漏电极214b的像素电极219a与下面的公共电极219b之间产生预定电场,从而激活液晶层230的多个液晶分子。
因此,可以通过调节施加到像素电极219a的电压或施加到公共电极219b的电压的大小来控制液晶层230的液晶分子的行为。因此,可以通过调节通过黑色矩阵223的透光区BM_O入射到栅极TFT G_TFT上的光量来控制栅极TFT G_TFT的阈值电压的负(-)偏移量。
由于栅极驱动器120的与黑色矩阵223的遮光区BM_C相对应的栅极TFT G_TFT没有用来激活液晶层230的多个液晶分子,因此可以省略该栅极TFT G_TFT的公共电极219a。
黑色矩阵223的透光区BM_O可以与栅极驱动器120的级ST1至ST4中的每个级的、根据QB节点的电位操作的至少一个栅极TFT G_TFT相对应。
这里,黑色矩阵223的透光区BM_O可以被配置成对应于与其对应的栅极TFT G_TFT的总尺寸。因此,足够的光可以通过透光区BM_O入射到栅极TFT G_TFT上。
替选地,黑色矩阵223的透光区BM_O可以被配置成对应于与其对应的栅极TFT G_TFT的有源层213的尺寸。因此,光可以以更集中的方式通过透光区BM_O入射到栅极TFT G_TFT上。换句话说,透光区BM_O与栅极TFT G_TFT的有源层213相对应,以使得可以防止通过透光区BM_O入射的光被栅极TFT G_TFT的其他电极(诸如源电极214a和漏电极214)反射和散射。
图5是图4的栅极驱动器的多个级之一的内部配置的图。
参照图5,栅极驱动器120的第N级STn可以包括根据从外部提供的信号来生成并输出第N栅电压VGn的第一至第八栅极TFT G_TFT1至G_TFT8。
第一栅极TFT G_TFT1可以响应于从最后一级之前的级(例如,第(N-2)级)输出的第(N-2)栅电压VG(n-2)而向Q节点提供第一源电压VDD。
第二栅极TFT G_TFT2可以将第一源电压VDD提供给QB节点。
第三栅极TFT(G_TFT3)可以响应于QB节点的电压而控制Q节点的电压。
第四栅极TFT G_TFT4可以响应于从第(N-2)级输出的第(N-2)栅电压VG(n-2)而使QB节点放电。
第五栅极TFT G_TFT5可以响应于Q节点的电压而使QB节点放电。
第六栅极TFT G_TFT6可以响应于从下一级之后的级(例如,第(N+2)级)输出的第(N+2)栅电压VG(n+2)而使Q节点放电。
第七栅极TFT G_TFT7可以响应于QB节点的电压而使输出节点放电。
第八栅极TFT G_TFT8可以响应于Q节点的电压而对输出节点充电,或者可以响应于QB节点的电压而使输出节点放电。
第N级STn的第一至第八栅极TFT G_TFT1至G_TFT8中的至少一个可以与黑色矩阵223的透光区BM_O相对应。例如,根据第N级STn的QB节点的电位操作的第三栅极TFT G_TFT3、第六栅极TFT G_TFT6、第七栅极TFT G_TFT7和第八栅极TFT G_TFT8可以与黑色矩阵223的透光区BM_O相对应。这是因为以下述方式操作栅极驱动器120:在使每个级的Q节点放电之后,将QB节点的电位保持在高电平达相对长的时间。
然而,应当理解,本发明不限于此,并且仅连接至第N级STn的QB节点的一个栅极TFT可以与黑色矩阵223的透光区BM_O相对应,或者仅直接连接至QB节点的栅极TFT可以与黑色矩阵223的透光区BM_O相对应。
除了第三栅极TFT G_TFT3、第六栅极TFT G_TFT6、第七栅极TFT G_TFT7和第八栅极TFT G_TFT8之外的其余栅极TFT可以与黑色矩阵223的遮光区BM_C相对应。
黑色矩阵223的透光区BM_O可以被配置成与第三栅极TFT G_TFT3、第六栅极TFTG_TFT6、第七栅极TFT G_TFT7和第八栅极TFT G_TFT8中的每一个的整体或有源层213相对应。
如上所述,栅极驱动器120的第N级STn的第三栅极TFT G_TFT3、第六栅极TFT G_TFT6、第七栅极TFT G_TFT7和第八栅极TFT G_TFT8可以与黑色矩阵223的透光区BM_O相对应。因此,光可以通过透光区BM_O入射到第N级STn的第三栅极TFT G_TFT3、第六栅极TFT G_TFT6、第七栅极TFT G_TFT7和第八栅极TFT G_TFT8,从而防止栅极TFT的阈值电压在正(+)方向上偏移。因此,可以防止由于累积的PBTS引起的第N级STn的栅极TFT的劣化,并且防止操作可靠性的劣化,诸如输出电流的减小。
图6是示出典型的栅极TFT和根据本发明的栅极TFT的电压-电流特性的曲线图,以及图7是示出典型的栅极驱动器和根据本发明的栅极驱动器的阈值电压特性的曲线图。
参照图6,在典型的显示器的栅极驱动器中,栅极TFT的电压-电流特性由于累积的PBTS而在正(+)方向上偏移(A)。
相反,在根据本实施例的显示器100的栅极驱动器120中,允许光入射到每个级的至少一个栅极TFT,并且与典型的栅极TFT的电压-电流特性(B)相比,该栅极TFT的电压-电流特性在负(-)方向上偏移了预定电压(ΔV)。因此,根据本实施例的显示器100可以防止栅极驱动器120的栅极TFT的劣化和输出电流的减小,从而提高操作可靠性。
参照图7,在典型的显示器的栅极驱动器中,多个栅极TFT的阈值电压由于累积的PBTS而在正(+)方向上偏移(C)。相反,在根据本实施例的显示器100的栅极驱动器120中,多个栅极TFT的阈值电压可以保持恒定(D)。
虽然本文中已经描述了一些实施例,但是本领域技术人员应当理解,这些实施例仅以说明的方式给出,并且本发明不限于此。此外,应当理解,在不北里本发明的精神和范围的情况下,本领域技术人员可以进行各种修改、变化和更改。因此,本发明的范围应当仅由所附权利要求及其等同方案限制。
Claims (11)
1.一种显示面板,包括:
第一基板,所述第一基板包括设置有多个像素的显示区域和在所述显示区域外部的非显示区域;
栅极驱动器,所述栅极驱动器包括多个栅极TFT并且设置在所述第一基板的所述非显示区域中;以及
第二基板,所述第二基板包括与所述栅极驱动器相对应的黑色矩阵并且包括遮光区和透光区,所述第二基板耦接至所述第一基板,
其中,所述黑色矩阵的所述透光区与所述栅极驱动器的所述栅极TFT中的至少一个栅极TFT相对应。
2.根据权利要求1所述的显示面板,其中,所述显示面板具有所述第一基板设置在所述第二基板下方的倒装结构。
3.根据权利要求1所述的显示面板,其中,所述透光区与所述至少一个栅极TFT的总尺寸相对应。
4.根据权利要求1所述的显示面板,其中,所述透光区与所述至少一个栅极TFT的有源层的尺寸相对应。
5.根据权利要求4所述的显示面板,其中,所述有源层由氧化物形成。
6.根据权利要求1所述的显示面板,其中,所述栅极驱动器包括多个级,每个级均包括所述多个栅极TFT,并且所述透光区与所述栅极驱动器的每个级的所述多个栅极TFT中的至少一个栅极TFT相对应,所述至少一个栅极TFT是根据QB节点的电位来操作的。
7.根据权利要求1所述的显示面板,其中,所述至少一个栅极TFT通过所述第二基板的背面和所述透光区接收来自外部的光。
8.根据权利要求1所述的显示面板,还包括:
液晶层,所述液晶层介于所述第一基板与所述第二基板之间,
其中,所述至少一个栅极TFT还包括与连接至漏电极的像素电极一起形成电场以激活所述液晶层的液晶分子的公共电极。
9.一种无边框型显示器,包括:
显示面板,所述显示面板包括:第一基板,所述第一基板包括布置有多个像素的显示区域和在所述显示区域外部的非显示区域;栅极驱动器,所述栅极驱动器设置在所述第一基板的所述非显示区域中并且包括多个栅极TFT;以及第二基板,所述第二基板耦接至所述第一基板并且包括黑色矩阵,所述黑色矩阵与所述栅极驱动器相对应并且包括遮光区和透光区,所述黑色矩阵的所述透光区与所述栅极驱动器的至少一个栅极TFT相对应;以及
背光单元,所述背光单元设置在所述第二基板的背面并且提供光,
其中,所述栅极驱动器的所述至少一个栅极TFT通过所述第二基板的所述黑色矩阵的所述透光区接收来自所述背光单元的光。
10.根据权利要求9所述的无边框型显示器,其中,所述显示面板具有所述第一基板设置在所述第二基板下方的倒装结构。
11.根据权利要求9所述的无边框型显示器,其中,所述栅极驱动器的所述多个栅极TFT中的每个栅极TFT均包括由氧化物形成的有源层。
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