CN107879738A - 一种太赫兹波段介质材料、制备方法及制成电介质的方法 - Google Patents

一种太赫兹波段介质材料、制备方法及制成电介质的方法 Download PDF

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CN107879738A
CN107879738A CN201711153953.1A CN201711153953A CN107879738A CN 107879738 A CN107879738 A CN 107879738A CN 201711153953 A CN201711153953 A CN 201711153953A CN 107879738 A CN107879738 A CN 107879738A
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dielectric material
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胡明哲
曾志伟
尹跃
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Liupanshui Normal University
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Abstract

本发明公开了一种太赫兹波段介质材料、制备方法及制成电介质的方法。该介质材料的化学配比通式为[(Mg1‑x Al2/3x )1/3Nb2/3]O2 + y wt% ABSMV；其中0≤x≤0.3，y=1或2。本发明具有烧结温度低，介电损耗低和介电常数适中的优点。

Description

一种太赫兹波段介质材料、制备方法及制成电介质的方法
技术领域
本发明涉及一种通信领域用的材料及制备方法，特别是一种太赫兹波段介质材料、制备方法及制成电介质的方法。
背景技术
大数据时代无线通信迅猛发展，技术上要求无线通讯器件具有不断向高频（微波、太赫兹波）、高增益（或低插入损耗）方向发展的特性。基于此，介质天线、滤波器等通讯器件要求电介质在微波或太赫兹波段的介电损耗应较低，并且其介电常数适中，以满足上述要求。但目前能应用于太赫兹波段的电介质材料还存在介电损耗偏高、烧结温度较高的缺点。
发明内容
本发明的目的，是提供一种太赫兹波段介质材料、制备方法及制成电介质的方法。本发明具有烧结温度低，介电损耗低和介电常数适中的优点。
本发明是这样实现的。一种太赫兹波段介质材料，该介质材料的化学配比通式为[(Mg1-x Al2/3x )1/3Nb2/3]O2 + y wt% ABSMV；其中0≤x≤0.3，y=1或2。
前述的太赫兹波段介质材料的制备方法，按下述步骤制备：
a、将原料Al2O3、MgCO3和Nb2O5按化学配比通式[(Mg1-x Al2/3x )1/3Nb2/3]O2配料混合，其中0≤x≤0.3，得A品；
b、将A品、磨球和水按照体积比1：1：1混匀后球磨3~5小时，得B品；
c、将B品烘干，并过40~80目筛，得C品；
d、将C品在空气中以1200±5oC预烧2~6小时，得D品；
e、将Al2O3 、B2O3、SiO2、MgO及V2O5按重量比2：7：8：1：2混合，得E品；
f、将E品与水混匀，之后球磨3~5小时，得F品；
g、将F品烘干，之后加热至大于1250oC，并在空气中淬火得ABSMV玻璃，将ABSMV玻璃粉碎，得G品；
h、将D品和G品按化学配比通式[(Mg1-x Al2/3x )1/3Nb2/3]O2 + y wt% ABSMV配料混合，其中y=1或2，得H品；
i、将H品、磨球和水按照体积比1：1：1混匀后，再加入0.5~2wt%的表面活性剂球磨3~5小时，将球磨产物烘干即得。
前述的太赫兹波段介质材料的制备方法所述的步骤a中，所述的x=0.2。
前述的太赫兹波段介质材料的制备方法所述的步骤e中，所述的MgO，是由MgCO3引入的MgO。
前述的太赫兹波段介质材料的制备方法所述的步骤b、f和i中，所述的水为去离子水。
前述的太赫兹波段介质材料的制备方法所述的步骤i中，所述的表面活性剂是十八烷酸。
前述的太赫兹波段介质材料制备电介质的方法，按下述步骤制备：
a、向介质材料加入3~5wt% PVA混匀，混匀后过40~80目筛，得A品；
b、将A品在150MPa下压制成片状，得B品；
c、将B品在1100～1250oC的空气中烧结1～8小时，即得。
有益效果：与现有技术相比，本发明采用[(Mg1-x Al2/3x )1/3Nb2/3]O2 + y wt% ABSMV（0≤x≤0.3，y=1, 2）为化学配比通式，通过调节配比通式中的x值，来调控其介电性能，特别是其介电常数和介电损耗性能，通过调节配比通式中的y值，来调控其烧结温度、烧结密度等性能。通过该方法，本发明制备出的[(Mg0.8Al0.1333)1/3Nb2/3]O2 + 2 wt% ABSMV (x=0.2,y=2)介质材料，在烧结温度为1200±5oC的条件下介电性能为最佳，可达到：1THz波段下，复介电常数实部ε r =12.9064；复介电常数虚部ε’’ r=0.2859；介电损耗tanδ=0.02215。由此可知，本发明在较低的烧结温度下(传统的烧结温度约为1450oC)，即能得到介电损耗低和介电常数适中的介质材料。
综上，本发明具有烧结温度低，介电损耗低和介电常数适中的优点。
为了说明本发明的有益效果，申请人进行了以下实验检测：
对发明制备得到的电介质样品经打磨、抛光后采用太赫兹时域光谱系统，根据时域透射谱的峰位来计算其复介电常数实部εr、复介电常数虚部ε’’ r及介电损耗（tanδ值）。测试波段为0.2~1.0THz。图1示出了ABSMV玻璃掺量为2wt%（y=2）的[(Mg1-x Al2/3x )1/3Nb2/3]O2（0≤x≤0.3）样品的XRD衍射物相结构，由图1可见，样品均形成了良好的[(Mg1-x Al2/3x )1/3Nb2/3]O2单相特性，杂相很少。图2~4示出了ABSMV玻璃掺量为2wt%（y=2）的[(Mg1-x Al2/3x )1/3Nb2/3]O2（0≤x≤0.3）样品在0.2~1.0THz波段的介电性能检测结果。图2为样品在室温下、0.2~1THz波段的介电常数特性，它表明样品在0.2~1太赫兹波段介电常数随x值的升高而降低，并在x=0.2时具有适中的介电常数，图3和图4分别为样品在在室温下、0.2~1THz波段的复介电常数虚部和介电损耗特性，它们表明样品在0.2~1太赫兹波段复介电常数虚部随x值的升高而不断降低，而介电损耗图则说明Al3+的取代Mg2+可以改善介质的损耗特性，提高介质的Q值，当x=0.2时，样品在0.7~1太赫兹波段具有最低的介电损耗值。
附图说明
图1是化学配比通式为[(Mg1-x Al2/3x )1/3Nb2/3]O2（0≤x≤0.3）+2wt% ABSMV的介质材料制备的电介质的XRD衍射图谱；
图2是化学配比通式为[(Mg1-x Al2/3x )1/3Nb2/3]O2（0≤x≤0.3）+2wt% ABSMV的介质材料制备的电介质在室温下、0.2~1THz波段的复介电常数实部性能；
图3是化学配比通式为[(Mg1-x Al2/3x )1/3Nb2/3]O2（0≤x≤0.3）+2wt% ABSMV的介质材料制备的电介质在室温下、0.2~1THz波段的复介电常数虚部性能；
图4是化学配比通式为[(Mg1-x Al2/3x )1/3Nb2/3]O2（0≤x≤0.3）+2wt% ABSMV的介质材料制备的电介质在室温下、0.2~1THz波段的介电损耗性能。
具体实施方式
实施例1。 一种太赫兹波段介质材料，该介质材料的化学配比通式为[(Mg1- x Al2/3x )1/3Nb2/3]O2 + y wt% ABSMV；其中0≤x≤0.3，y=1或2。
前述的太赫兹波段介质材料按下述步骤制备：
a、将原料Al2O3、MgCO3和Nb2O5按化学配比通式[(Mg1-x Al2/3x )1/3Nb2/3]O2配料混合，其中0≤x≤0.3，得A品；
b、将A品、磨球和水按照体积比1：1：1混匀后球磨3~5小时，得B品；
c、将B品烘干，并过40~80目筛(最优60目筛)，得C品；
d、将C品在空气中以1200±5oC预烧2~6小时，得D品；
e、将Al2O3 、B2O3、SiO2、MgO及V2O5按重量比2：7：8：1：2混合，得E品；
f、将E品与水混匀，之后球磨3~5小时，得F品；
g、将F品烘干，之后加热至大于1250oC，并在空气中淬火得ABSMV玻璃，将ABSMV玻璃粉碎，得G品；
h、将D品和G品按化学配比通式[(Mg1-x Al2/3x )1/3Nb2/3]O2 + y wt% ABSMV配料混合，，其中y=1或2，得H品；
i、将H品、磨球和水按照体积比1：1：1混匀后，再加入0.5~2wt%(最优为1wt%)的表面活性剂球磨3~5小时，将球磨产物烘干即得。
最优地，前述的x=0.2。
前述的步骤e中，所述的MgO，是由MgCO3引入的MgO。
前述的步骤b、f和i中，所述的水为去离子水。
前述的，步骤i中，所述的表面活性剂是十八烷酸。
前述的太赫兹波段介质材料制备电介质的方法：按下述步骤制备：
a、向介质材料加入3~5wt%(最优为5wt%) PVA混匀，混匀后过40~80目筛(最优为50目筛)，得A品；
b、将A品在150MPa下压制成片状，得B品；
c、将B品在1100～1250oC的空气中烧结1～8小时，即得。
本发明通过调控[(Mg1-x Al2/3x )1/3Nb2/3]O2 + y wt% ABSMV（0≤x≤0.3，y=1, 2）的化学配比通式中x，y值，其中，采用调节配比通式中的x值，来调控其介电性能，特别是其介电常数和介电损耗性能，通过调节配比通式中的y值，来调控其烧结温度、烧结密度等性能。其中，制备出的[(Mg0.8Al0.1333)1/3Nb2/3]O2 + 2 wt% ABSMV (x=0.2, y=2)样品，在烧结温度为1200±5oC的条件下介电性能为最佳，可达到：1THz波段下，复介电常数实部ε r =12.9064；复介电常数虚部ε’’ r=0.2859；介电损耗tanδ=0.02215。
本发明所提供的这种新型低损耗的电介质材料可广泛地应用于微波、太赫兹波导等电磁元器件中。

Claims (7)

1. 一种太赫兹波段介质材料，其特征在于：该介质材料的化学配比通式为[(Mg1- x Al2/3x )1/3Nb2/3]O2 + y wt% ABSMV；其中0≤x≤0.3，y=1或2。
2.如权利要求1所述的太赫兹波段介质材料的制备方法，其特征在于，按下述步骤制备：
a、将原料Al2O3、MgCO3和Nb2O5按化学配比通式[(Mg1-x Al2/3x )1/3Nb2/3]O2配料混合，其中0≤x≤0.3，得A品；
b、将A品、磨球和水按照体积比1：1：1混匀后球磨3~5小时，得B品；
c、将B品烘干，并过40~80目筛，得C品；
d、将C品在空气中以1200±5oC预烧2~6小时，得D品；
e、将Al2O3 、B2O3、SiO2、MgO及V2O5按重量比2：7：8：1：2混合，得E品；
f、将E品与水混匀，之后球磨3~5小时，得F品；
g、将F品烘干，之后加热至大于1250oC，并在空气中淬火得ABSMV玻璃，将ABSMV玻璃粉碎，得G品；
h、将D品和G品按化学配比通式[(Mg1-x Al2/3x )1/3Nb2/3]O2 + y wt% ABSMV配料混合，其中y=1或2，得H品；
i、将H品、磨球和水按照体积比1：1：1混匀后，再加入0.5~2wt%的表面活性剂球磨3~5小时，将球磨产物烘干即得。
3.根据权利要求2所述的太赫兹波段介质材料的制备方法，其特征在于，步骤a中，所述的x=0.2。
4.根据权利要求2所述的太赫兹波段介质材料的制备方法，其特征在于，步骤e中，所述的MgO，是由MgCO3引入的MgO。
5.根据权利要求2所述的太赫兹波段介质材料的制备方法，其特征在于，步骤b、f和i中，所述的水为去离子水。
6.根据权利要求2所述的太赫兹波段介质材料的制备方法，其特征在于，步骤i中，所述的表面活性剂是十八烷酸。
7.根据权利要求1所述的太赫兹波段介质材料制备电介质的方法，其特征在于：按下述步骤制备：
a、向介质材料加入3~5wt%PVA混匀，混匀后过40~80目筛，得A品；
b、将A品在150MPa下压制成片状，得B品；
c、将B品在1100～1250oC的空气中烧结1～8小时，即得。
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