CN107863291B - Electron beam photoetching method for manufacturing T-shaped gate structure - Google Patents
Electron beam photoetching method for manufacturing T-shaped gate structure Download PDFInfo
- Publication number
- CN107863291B CN107863291B CN201711091798.5A CN201711091798A CN107863291B CN 107863291 B CN107863291 B CN 107863291B CN 201711091798 A CN201711091798 A CN 201711091798A CN 107863291 B CN107863291 B CN 107863291B
- Authority
- CN
- China
- Prior art keywords
- photoresist
- electron beam
- shaped gate
- metal
- beam lithography
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000001259 photo etching Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000010894 electron beam technology Methods 0.000 title description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 138
- 230000035945 sensitivity Effects 0.000 claims abstract description 21
- 238000000609 electron-beam lithography Methods 0.000 claims abstract description 20
- 239000003292 glue Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 17
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims abstract description 16
- 239000004926 polymethyl methacrylate Substances 0.000 claims abstract description 16
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 238000001459 lithography Methods 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 claims description 6
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 239000012790 adhesive layer Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims description 2
- 229920002845 Poly(methacrylic acid) Polymers 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 description 6
- 229910002601 GaN Inorganic materials 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- QXHRQZNDMYRDPA-UHFFFAOYSA-N 3,4-dimethylpentan-2-one Chemical group CC(C)C(C)C(C)=O QXHRQZNDMYRDPA-UHFFFAOYSA-N 0.000 description 1
- 206010067484 Adverse reaction Diseases 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000006838 adverse reaction Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001883 metal evaporation Methods 0.000 description 1
- IWVKTOUOPHGZRX-UHFFFAOYSA-N methyl 2-methylprop-2-enoate;2-methylprop-2-enoic acid Chemical compound CC(=C)C(O)=O.COC(=O)C(C)=C IWVKTOUOPHGZRX-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0277—Electrolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
Abstract
An electron beam lithography method for manufacturing a T-shaped gate structure comprises the following steps: coating a first photoresist with low sensitivity and high photoetching dosage on the GaN heterojunction planar material and baking; coating a second photoresist on the first photoresist and baking; the second photoresist adopts PMMA-MAA photoresist, the sensitivity of the PMMA-MAA photoresist is higher than that of PMAA, and the photoresist dose is lower than that of PMMA; coating the third photoresist on the second photoresist and baking; the third photoresist still adopts PMMA-MAA glue; the baking temperature of the third photoresist is lower than that of the second photoresist; and finally forming a T-shaped gate structure with an undercut structure through electron beam lithography, development and stripping processes. The invention can prepare the T-shaped gate more conveniently and reliably.
Description
Technical Field
The invention relates to the field of microwave communication, in particular to an electron beam lithography method for manufacturing a T-shaped grid structure.
Background
With the continuous development of wireless networks, mobile phone communication, television broadcasting, aerospace systems, and the like, the application of microwave communication has been almost covered in all human activities and is becoming an indispensable part of life more and more.
The core of the microwave communication system is a microwave power amplifier, which is also the most expensive component in the system, and plays the roles of signal amplification and high-power output, and the performance of the microwave power amplifier directly determines the working effect of the microwave communication system. The core of the microwave power amplifier is a microwave power device, although a Si-based device has a mature process, high reliability and low cost, due to the dual limitations of power and frequency characteristics, a transistor made of a novel semiconductor material such as gallium arsenide GaAs, gallium nitride GaN, indium phosphide InP and the like increasingly becomes the main development direction of the microwave power device. For microwave power transistor devices, the cross-sectional structure of the gate electrode of the device is generally T-shaped, for exampleAs shown in the attached figure 1, the length of the grid contacted with the material barrier layer is smaller so as to ensure that the microwave cut-off frequency f is higherT(or called current cut-off frequency) and a larger cross-sectional area of the gate along the current conduction direction, so that a smaller parasitic resistance of the gate can be ensured, and the maximum oscillation frequency f is increasedMAX(or gain cut-off frequency) and the frequency parameter is a key parameter for determining the overall performance of the microwave power device.
The process method for manufacturing the T-shaped gate is realized by photoetching, metal evaporation and stripping. Theoretically, the device frequency is inversely proportional to the gate length, i.e. a high frequency (f) is to be obtainedTAbove 100 GHz) it is desirable to reduce the gate length of the device, i.e., the length of the bottom of the T-gate. For high frequency devices, the gate foot size of a T-shaped gate is generally below 250 nm. The conventional optical lithography process is limited by the limit performance of the lithography equipment and the cost of the equipment, so the electron beam lithography machine is used as a common implementation method. Unlike optical lithography, electron beam lithography machines employ a beam spot of electrons as a light source, which can minimize the optical diffraction effect because the electrons have the smallest wavelength in nature, and thus the minimum diameter of the electron beam spot can reach the range of several nanometers. The minimum photoetching size of the electron beam photoetching machine can reach 20nm at present, and the requirement of a T-shaped grid in an HEMT device can be effectively met.
Meanwhile, due to the special structure of the T-shaped gate, when the electron beam lithography process is adopted, multiple layers of photoresist are required to be used at the same time, and the T-shaped structure is formed through one-time lithography. Two methods are commonly used, and the operation processes are respectively as follows:
1. the double-layer photoresist is adopted, the lower layer photoresist is the photoresist with low sensitivity and high photoresist dose, such as polymethyl methacrylate (PMMA for short), and the upper layer photoresist is the photoresist with high sensitivity and low photoresist dose, such as the copolymer of methyl methacrylate-methacrylic acid (PMMA-MAA for short). As shown in fig. 2(a), in the photolithography, the photoresist dose of the patterns on both sides is set to a low dose suitable for the upper layer resist, and the photoresist dose of the pattern in the middle is set to a high dose suitable for the lower layer resist. During development, the photoresist is developed off because both layers of the photoresist in the middle are fully exposed, and only the upper layer of the photoresist with low dosage is fully exposed in the parts on both sides, so that only the upper layer of the photoresist is developed off. Thus, a T-shaped structure of photoresist is formed, and then metal deposition and stripping are carried out to form a T-shaped gate.
The method has the defects that due to the lack of an undercut structure, the metal in the T-shaped structure is not easy to separate from the metal to be stripped of the photoresist at the periphery, so that the metal in the T-shaped structure is stripped together, and the finished product rate is influenced.
2. Similar to the method 1, as shown in fig. 2(b), the lower layer of photoresist is made of a low-sensitivity and high-photoresist-dose photoresist, the upper layer of photoresist is made of a high-sensitivity and low-photoresist-dose photoresist, and the middle layer of photoresist is made of a stripper or other photoresist with higher sensitivity and lower photoresist dose, so that an undercut structure is formed in the middle during development, which is beneficial to metal stripping.
However, this method has a disadvantage that since the developing solution required for the resist and the electron beam resist are not compatible, separate development is required for a plurality of times. Meanwhile, the developing solution required by different glues may cause some adverse reactions to other glues. For example, the main component of the developer required for stripping the photoresist is water, and electron beam resists, such as those containing PMMA, are prone to absorb water and expand, and further blister and deform, which affects the yield of photolithography.
Lift-off and undercut mentioned above are methods of photolithography and metal deposition in semiconductor processes to obtain a specific metal pattern. Referring to fig. 3(a), after the single layer photoresist is developed, metal is deposited, but since some metal is easily adhered to the photoresist sidewall, when the metal on the photoresist is stripped (the photoresist is dissolved by using a chemical solution), the metal on the material is stripped off together, and the process fails. Referring to fig. 3(b), a double-layer photoresist undercut process is used to facilitate stripping, i.e. the lower layer photoresist may be a non-photosensitive stripping photoresist (soluble in developer) or a photoresist with a lower exposure dose. Because the lower layer glue is dissolved in the developing solution more quickly, an inverted T-shaped structure is formed during development, and the structure is called an undercut structure. The structure can lead the metal deposited on the photoresist not to be adhered with the effective metal on the material, thus being capable of completely removing the metal deposited on the photoresist and leaving the effective metal on the material when stripping.
Disclosure of Invention
The invention aims to solve the problems in the prior art, and provides an electron beam lithography method for manufacturing a T-shaped gate structure, which can obtain the T-shaped gate structure only by two photoresists and one-time development and is convenient and reliable to operate.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
s1: coating a first photoresist with low sensitivity and high photoetching dosage on a substrate material and baking;
s2: coating a second photoresist on the first photoresist and baking, wherein the sensitivity of the second photoresist is higher than that of the first photoresist, and the photoresist dosage of the second photoresist is lower than that of the first photoresist;
s3: coating the third photoresist on the second photoresist and baking; the third photoresist still adopts the photoresist same as the second photoresist, and the baking temperature of the third photoresist is lower than that of the second photoresist in the step S2;
s4: performing electron beam lithography on the composite adhesive layer formed in the step S3, wherein during the lithography, the lithography dose of the patterns on the two sides is set to be suitable for the low dose of the upper layer adhesive, and the lithography dose of the pattern in the middle is set to be suitable for the high dose of the lower layer adhesive;
s5: forming a T-shaped structure with an undercut structure through development;
s6: depositing metal on the developed structure, wherein the thickness of the first photoresist is less than the thickness of the gate metal is less than the thickness of the second photoresist;
s7: and removing the photoresist and the attached metal by adopting a stripping process, and leaving the metal deposited on the planar material to form the T-shaped gate.
The first photoresist is PMMA glue, and the second photoresist and the third photoresist are both PMMA-MAA glue.
The baking temperature of the third photoresist is lower than that of the second photoresist by more than 20 ℃.
When the electron beam lithography is performed in step S4, a gap is left between the two side patterns and the middle pattern.
When the developing solution is developed in the step S5, a solution prepared from MIBK and IPA in a volume ratio of 1:3 is selected as the developing solution.
In step S6, the thickness of the second photoresist is greater than about 1.3 times the thickness of the deposited metal.
In step S7, the photoresist and the metal attached to the upper layer thereof are peeled off together by soaking in an acetone solution.
Compared with the prior art, the invention has the following beneficial effects: during development, the first photoresist, the second photoresist and the third photoresist can adopt the same developing solution, only one development is needed, and as the sensitivity of the photoresist is related to the prebaking temperature before photoetching, the higher the baking temperature is, the higher the sensitivity is, and the higher the sensitivity is, the larger the developing area is under the same developing solution and the same developing time. Therefore, the photoresist II and the photoresist III which form a double-layer structure by the same photoresist can form an undercut structure due to the sensitivity difference caused by different baking temperatures, and the photoresist I has the lowest sensitivity and the smallest pattern. Thus finally forming a T-shaped structure with an undercut structure. The invention can avoid the problem of stripping failure caused by two layers of photoresist, the whole method can form a photoresist pattern only by once development, and the problem of developer incompatibility caused by three layers of photoresist can be avoided, so that the photoetching method can prepare the T-shaped gate more conveniently and reliably.
Furthermore, the first photoresist adopts PMMA glue with low sensitivity and high photoresist dose, the properties of the PMMA glue and the PMMA-MAA glue are similar, and the development can be completed by only using the same developing solution.
Drawings
Fig. 1 is a schematic cross-sectional structure of a high mobility transistor device based on GaN-based heterojunction materials;
FIG. 2 is a schematic diagram of a conventional T-shaped gate structure lithography process: (a) no undercut structure; (b) an underscut structure;
FIG. 3 is a schematic diagram of a conventional stripping process: (a) the single layer glue has no undercut structure; (b) the double-layer glue has an undercut structure;
FIG. 4 is a flow chart of an electron beam lithography method of the present invention;
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
Referring to fig. 4, the electron beam lithography method for fabricating the T-shaped gate structure of the present invention comprises the following steps:
1. coating a first photoresist on a substrate material, and baking for 2 minutes at 180 ℃, wherein the photoresist is PMMA (polymethyl methacrylate) which has the characteristics of low sensitivity and high photoresist dosage; the substrate material adopts GaN-based heterojunction planar material;
2. coating a second photoresist which is PMMA-MAA photoresist and baking for 5 minutes at 200 ℃, wherein the sensitivity of the PMMA-MAA photoresist is higher than that of PMAA photoresist, and the photoresist dose is lower than that of PMMA photoresist;
3. coating a third photoresist which still adopts PMMA-MAA photoresist and baking, wherein the baking temperature is lower than that of the second photoresist by more than 20 ℃, and in the embodiment, baking is carried out for 5 minutes at 160 ℃;
4. electron beam lithography, as shown in the figure, the lithography dose of the patterns on the two sides is set to be suitable for the low dose of the upper layer photoresist, the lithography dose of the pattern in the middle is set to be suitable for the high dose of the lower layer photoresist, and the specific dose setting is related to the model and the setting of the adopted electron beam lithography machine; in consideration of the photoetching proximity effect, the patterns on the two sides and the middle pattern can have certain gaps;
5. developing, wherein the PMMA-MAA glue and the PMMA glue can adopt the same developing solution, so that only one time of developing is needed, and the developing solution generally adopts a 1:3 solution of MIBK and isopropanol to form a T-shaped structure with an undercut structure;
MIBK is methyl isobutyl (methyl) ketone, or methyl isobutyl ketone, 4-methyl-2-pentanone; IPA is isopropanol;
6. and depositing metal, wherein the thickness of the gate metal is greater than that of the first photoresist to ensure that a T-shaped gate is formed, and the thickness of the gate metal is less than that of the second photoresist (the thickness of the second photoresist needs to be greater than about 1.3 times of the thickness of the metal) to ensure that the stripping is successful.
The common metal deposition process is electron beam evaporation;
7. the T-shaped gate is formed by a stripping process, generally, an acetone solution is adopted for soaking, and the acetone can enable the photoresist and the metal attached to the upper layer of the photoresist to fall off together, so that the metal deposited on the planar material is left, and the T-shaped gate is formed.
In the invention, when developing, only one time of development is needed because the PMMA-MAA glue and the PMMA glue can adopt the same developing solution. Since the sensitivity of the photoresist has a certain relationship with the pre-baking temperature before the photolithography, the higher the baking temperature, the higher the sensitivity. The more sensitive the photoresist, the more area it develops away in the same developer and the same development time. Therefore, for the double-layer PMMA-MAA, sensitivity difference caused by different baking temperatures can form an undercut structure. And the lower layer PMMA glue has the lowest sensitivity and the smallest pattern. Thus finally forming a T-shaped structure with an undercut structure.
The advantages of this method are: the undercut structure is formed by only two kinds of photoresist through the temperature change of the photoresist drying, the problem of stripping failure caused by two layers of photoresist is avoided, and meanwhile, due to the fact that the PMMA material and the PMMA-MAA material are close in property, the same developing solution can be used, so that the photoresist graph can be formed only by once developing in the whole method, and the problem of mixing of the developing solutions caused by three layers of photoresist can be avoided. Therefore, the photoetching method can prepare the T-shaped gate more conveniently and reliably.
Claims (5)
1. An electron beam lithography method for manufacturing a T-shaped gate structure is characterized by comprising the following steps:
s1: coating a first photoresist with low sensitivity and high photoetching dosage on a substrate material and baking;
s2: coating a second photoresist on the first photoresist and baking, wherein the sensitivity of the second photoresist is higher than that of the first photoresist, and the photoresist dosage of the second photoresist is lower than that of the first photoresist;
s3: coating the third photoresist on the second photoresist and baking; the third photoresist still adopts the photoresist same as the second photoresist, and the baking temperature of the third photoresist is lower than that of the second photoresist in the step S2;
the first photoresist is PMMA (polymethyl methacrylate) glue, and the second photoresist and the third photoresist are PMMA-MAA glue;
the baking temperature of the third photoresist is lower than that of the second photoresist by more than 20 ℃;
s4: performing electron beam lithography on the composite adhesive layer formed in the step S3, wherein during the lithography, the lithography dose of the patterns on the two sides is set to be suitable for the low dose of the upper layer adhesive, and the lithography dose of the pattern in the middle is set to be suitable for the high dose of the lower layer adhesive;
s5: forming a T-shaped structure with an undercut structure through development;
s6: depositing metal on the developed structure, wherein the thickness of the first photoresist is less than the thickness of the gate metal is less than the thickness of the second photoresist;
s7: and removing the photoresist and the attached metal by adopting a stripping process, and leaving the metal deposited on the planar material to form the T-shaped gate.
2. The electron beam lithography method for fabricating a T-shaped gate structure according to claim 1, wherein: when the electron beam lithography is performed in step S4, a gap is left between the two side patterns and the middle pattern.
3. The electron beam lithography method for fabricating a T-shaped gate structure according to claim 1, wherein: when the developing solution is developed in the step S5, a solution prepared from MIBK and IPA in a volume ratio of 1:3 is selected as the developing solution.
4. The electron beam lithography method for fabricating a T-shaped gate structure according to claim 1, wherein: in step S6, the thickness of the second photoresist is greater than 1.3 times the thickness of the deposited metal.
5. The electron beam lithography method for fabricating a T-shaped gate structure according to claim 1, wherein: in step S7, the photoresist and the metal attached to the upper layer thereof are peeled off together by soaking in an acetone solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711091798.5A CN107863291B (en) | 2017-11-08 | 2017-11-08 | Electron beam photoetching method for manufacturing T-shaped gate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711091798.5A CN107863291B (en) | 2017-11-08 | 2017-11-08 | Electron beam photoetching method for manufacturing T-shaped gate structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107863291A CN107863291A (en) | 2018-03-30 |
| CN107863291B true CN107863291B (en) | 2020-06-26 |
Family
ID=61699879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711091798.5A Active CN107863291B (en) | 2017-11-08 | 2017-11-08 | Electron beam photoetching method for manufacturing T-shaped gate structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107863291B (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109440067B (en) * | 2018-11-05 | 2021-01-26 | 中国工程物理研究院电子工程研究所 | Method for processing thin film structure by utilizing oblique evaporation |
| CN109860987A (en) * | 2019-01-29 | 2019-06-07 | 中国科学技术大学 | The luminous antenna and preparation method thereof of electric excitation |
| CN110571145B (en) * | 2019-07-25 | 2022-03-11 | 西安电子科技大学 | Preparation method of floating Y-shaped grid |
| CN110571143B (en) * | 2019-07-25 | 2022-04-22 | 西安电子科技大学 | Manufacturing method of high-frequency semiconductor grid |
| CN110571144B (en) * | 2019-07-25 | 2022-03-11 | 西安电子科技大学 | Manufacturing method of semiconductor grid |
| CN110544625B (en) * | 2019-07-25 | 2022-04-22 | 西安电子科技大学 | T-shaped grid for inhibiting short channel effect and manufacturing process thereof |
| CN110828307A (en) * | 2019-10-16 | 2020-02-21 | 中芯集成电路制造(绍兴)有限公司 | Method for forming material layer with inclined side wall and semiconductor device |
| CN112645276B (en) * | 2020-03-06 | 2024-02-09 | 腾讯科技（深圳）有限公司 | Indium column and preparation method thereof |
| CN112652540B (en) * | 2020-07-01 | 2022-04-22 | 腾讯科技（深圳）有限公司 | Indium column welding spot preparation method, chip substrate and chip |
| CN112271133A (en) * | 2020-09-25 | 2021-01-26 | 华东光电集成器件研究所 | Metal stripping method based on three layers of glue |
| CN112133790A (en) * | 2020-09-25 | 2020-12-25 | 武汉敏芯半导体股份有限公司 | Preparation method of high-speed photoelectric detector |
| CN115836394A (en) * | 2020-11-27 | 2023-03-21 | 华为技术有限公司 | Semiconductor device and manufacturing method thereof |
| CN113517177B (en) * | 2021-04-27 | 2023-03-21 | 厦门市三安集成电路有限公司 | Manufacturing method of electron beam lithography auxiliary process |
| CN116013969A (en) * | 2022-12-12 | 2023-04-25 | 苏州科技大学 | Method for preparing grid metal of gallium nitride HEMT radio frequency microwave device |
| CN115799059B (en) * | 2023-02-09 | 2023-08-18 | 徐州金沙江半导体有限公司 | Manufacturing method of GaN HEMT BCB dielectric double-layer gate |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4115120A (en) * | 1977-09-29 | 1978-09-19 | International Business Machines Corporation | Method of forming thin film patterns by differential pre-baking of resist |
| CN1254945A (en) * | 1998-11-25 | 2000-05-31 | 株式会社村田制作所 | Method for forming wiring pattern |
| CN1767153A (en) * | 2004-10-25 | 2006-05-03 | 厦门三安电子有限公司 | Graphics electrode metal membrane stripping method for making semiconductor chip |
| CN1866472A (en) * | 2005-05-19 | 2006-11-22 | 中国科学院微电子研究所 | Method for making T-type grating of transistor circuit with high electron mobility |
| CN102509704A (en) * | 2011-12-26 | 2012-06-20 | 中国科学院微电子研究所 | Method for manufacturing T-shaped gate by adopting single electron beam exposure |
| CN103176354A (en) * | 2013-03-20 | 2013-06-26 | 中国科学院上海微系统与信息技术研究所 | Electron beam exposure patterning method on insulating substrate |
| CN105118774A (en) * | 2015-07-22 | 2015-12-02 | 中国电子科技集团公司第十三研究所 | Method for making nano T-shaped gate |
-
2017
- 2017-11-08 CN CN201711091798.5A patent/CN107863291B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4115120A (en) * | 1977-09-29 | 1978-09-19 | International Business Machines Corporation | Method of forming thin film patterns by differential pre-baking of resist |
| CN1254945A (en) * | 1998-11-25 | 2000-05-31 | 株式会社村田制作所 | Method for forming wiring pattern |
| CN1767153A (en) * | 2004-10-25 | 2006-05-03 | 厦门三安电子有限公司 | Graphics electrode metal membrane stripping method for making semiconductor chip |
| CN1866472A (en) * | 2005-05-19 | 2006-11-22 | 中国科学院微电子研究所 | Method for making T-type grating of transistor circuit with high electron mobility |
| CN102509704A (en) * | 2011-12-26 | 2012-06-20 | 中国科学院微电子研究所 | Method for manufacturing T-shaped gate by adopting single electron beam exposure |
| CN103176354A (en) * | 2013-03-20 | 2013-06-26 | 中国科学院上海微系统与信息技术研究所 | Electron beam exposure patterning method on insulating substrate |
| CN105118774A (en) * | 2015-07-22 | 2015-12-02 | 中国电子科技集团公司第十三研究所 | Method for making nano T-shaped gate |
Non-Patent Citations (1)
| Title |
|---|
| 电子束直写直栅和T形栅工艺技术应用;刘玉贵等;《显微、测量、微细加工技术与设备》;20020430(第4期);第42-43页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107863291A (en) | 2018-03-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107863291B (en) | Electron beam photoetching method for manufacturing T-shaped gate structure | |
| KR100853166B1 (en) | A method for the fabrication of field effect type compound semiconductor | |
| KR100631051B1 (en) | Method for fabricating a pseudomorphic high electron mobility transistor | |
| TWI277145B (en) | Method of forming a self-aligned, selectively etched, double recess high electron mobility transistor | |
| JP4015756B2 (en) | Manufacturing method of semiconductor device | |
| US5766967A (en) | Method for fabricating a submicron T-shaped gate | |
| CN105789037B (en) | Preparation method of small-size gate of microwave millimeter wave chip | |
| EP3108498A1 (en) | Semiconductor structures having t-shaped electrodes | |
| US20080241757A1 (en) | Reproducible, high yield method for fabricating ultra-short T-gates on HFETs | |
| TWI517218B (en) | Configuration and manufacturing method of low-resistance gate structure for semiconductor device and circuits | |
| JP4838171B2 (en) | Method for forming T-gate of high electron mobility transistor | |
| JPH03166734A (en) | Hetero-junction bipolar transistor and manufacture thereof | |
| US20080176391A1 (en) | Method for manufacturing semiconductor device | |
| KR101098401B1 (en) | fabricating method of Field Effect Transistor using Ⅲ-Ⅴ compound semiconductor | |
| Min et al. | Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process | |
| CN110571143A (en) | Manufacturing method of novel high-frequency semiconductor grid | |
| KR101140285B1 (en) | The Fabricating method for T gate with multi steps | |
| JP2006210499A (en) | Semiconductor device and its manufacturing method | |
| KR100230744B1 (en) | Method of manufacturing a semiconductor device | |
| KR100849926B1 (en) | Methods for fabricating a pseudomorphic high electron mobility transistor | |
| JPS63124465A (en) | Manufacture of bipolar transistor | |
| CN110729181B (en) | Manufacturing method of high-electron-mobility transistor T-shaped gate, T-shaped gate and transistor | |
| KR100644812B1 (en) | High frequency electronic device and the method of manufacturing the same | |
| JPH0684950A (en) | Manufacture of field effect transistor | |
| JP2004363150A (en) | Method of forming pattern |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |