CN107861556A - A kind of low-power consumption reference circuit being used in radio frequency - Google Patents
A kind of low-power consumption reference circuit being used in radio frequency Download PDFInfo
- Publication number
- CN107861556A CN107861556A CN201711016350.7A CN201711016350A CN107861556A CN 107861556 A CN107861556 A CN 107861556A CN 201711016350 A CN201711016350 A CN 201711016350A CN 107861556 A CN107861556 A CN 107861556A
- Authority
- CN
- China
- Prior art keywords
- grid
- drain
- pipes
- source electrode
- pmos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention discloses a kind of low-power consumption reference circuit being used in radio frequency, including：One micro-current generation circuit, its core is that metal-oxide-semiconductor is operated in sub-threshold region, therefore overall work electric current is the electric current of as little as na level, and power consumption is very small；One reference generating circuit, using cascade cascaded structure, the precision of caused reference voltage is very high, is affected by temperature smaller, and the area of overall circuit is also very small.
Description
Technical field
The present invention relates to reference voltage circuit field, more particularly to a kind of low-power consumption reference circuit being used in radio frequency.
Background technology
In the application of Internet of Things and most of wireless telecommunications, associated receiver circuitry or radiating circuit etc. are all that needs are low
Power consumption, therefore the reference circuit that can produce low-power consumption is very crucial and very necessary for whole application.Benchmark electricity
Pith of the road as analog circuit, the normal work within the scope of a wider temperature is generally required, therefore do not required nothing more than
It is low in energy consumption, it is also necessary to stable performance, to there is preferable temperature characterisitic.Traditional mode can be set using band-gap reference circuit
Meter, but its power consumption is all that microwatt level is other, is not belonging to low power dissipation design category.
The content of the invention
To overcome the above-mentioned problems of the prior art, it is a primary object of the present invention to provide a kind of be used in radio frequency
Low-power consumption reference circuit, the advantages that it possesses low-power consumption and less silicon area.
In view of the above and other objects, the present invention provides a kind of low-power consumption reference circuit being used in radio frequency, it is at least wrapped
Include：
One micro-current generation circuit, its core is that metal-oxide-semiconductor is operated in sub-threshold region, therefore overall work electric current is as little as na level
Electric current, power consumption is very small；One reference generating circuit, using cascode structure, the precision of caused reference voltage is also very
Height, the area of overall circuit are also very small.
The present invention proposes a kind of low-power consumption reference circuit being used in radio frequency, including：One micro-current generation circuit, its core
The heart is that metal-oxide-semiconductor is operated in sub-threshold region, therefore overall work electric current is the electric current of as little as na level, and power consumption is very small；One benchmark
Generation circuit, using cascode structure, the precision of caused reference voltage is also very high, and the area of overall circuit is also very
It is small；It is characterized in that：The micro-current generation circuit by the first PMOS PM1, the second PMOS PM2, the 3rd PMOS PM3,
4th PMOS PM4, the first PNP triode Q1, the 8th NMOS tube NM8 and the 9th NMOS tube NM9 are formed, the source electrode of PM1 pipes and
The source electrode of PM2 pipes is all connected with supply voltage VDD, PM2 grid and PM1 grid, PM3 grid, PM3 drain electrode, PM4
The drain electrode of grid, NM8 be connected；PM2 drain electrode is connected with PM4 source electrode；PM1 drain electrode PM3 source electrode is connected；
PM4 drain electrode is connected with Q1 emitter stage, NM8 grid；NM8 source electrode is connected with NM9 grid, NM9 drain electrode；Q1
Base stage, Q1 colelctor electrode, NM9 source ground；The reference generating circuit is by the 5th PMOS PM5, the 6th PMOS
PM6, the 7th PMOS PM7, the 8th PMOS PM8, the 9th PMOS PM9, the tenth PMOS PM10, the 11st PMOS
PM11, the 12nd PMOS PM12, the first NMOS tube NM1, the second NMOS tube NM2, the 3rd NMOS tube NM3, the 4th NMOS tube
NM4, the 5th NMOS tube NM5, the 6th NMOS tube NM6, the 7th NMOS tube NM7, first resistor R1 are formed；Source electrode, the PM6 of PM5 pipes
The source electrode of pipe, the source electrode of PM7 pipes, the source electrode of PM8 pipes are all connected with supply voltage VDD；Grid, the grid of PM6 pipes of PM5 pipes
Pole, the grid of PM7 pipes, PM8 grid, the grid of PM9 pipes, the grid of PM10 pipes, the grid of PM11 pipes, PM12 grid with
The grid of PM2 pipes links together；PM8 drain electrode is connected with PM12 source electrode；PM12 drain and NM6 drain, NM6
Grid, NM7 grid are connected；NM6 source electrode is connected with NM7 drain, NM5 source electrode；NM7 source ground；PM7's
Drain electrode is connected with PM11 source electrode；PM11 drain is connected with NM4 drain, NM4 grid, NM5 grid；NM4's
Source electrode is connected with NM5 drain, NM3 source electrode；PM6 drain electrode is connected with PM10 source electrode；PM10 drain and NM2's
Grid, NM2 drain, NM3 grid are connected；NM2 source electrode is connected with NM3 drain, NM1 source electrode；PM5 drain electrode
It is connected with PM9 source electrode；PM9 drain is connected with resistance R1 one end, output of its node as reference voltage V REF
End；The resistance R1 other end is connected with NM1 grid, NM1 drain；NM1 pipes, NM2 pipes, NM3 pipes, NM4 are managed, NM5 is managed,
NM6 pipes, NM7 pipes, NM8 is managed and the Substrate ground of NM9 pipes；PM1 pipes, PM2 are managed, PM3 pipes, PM4 pipes, PM5 pipes, PM6 pipes, PM7 are managed,
PM8 pipes, PM9 pipes, PM10 pipes, PM11 are managed and the substrate of PM12 pipes meets VDD.
Brief description of the drawings
The accompanying drawing for forming the part of the application is used for providing a further understanding of the present invention, schematic reality of the invention
Apply example and its illustrate to be used to explain the present invention, do not form inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is a kind of low-power consumption reference circuit figure being used in radio frequency of the present invention.
Embodiment
With reference to shown in Fig. 1, in the following embodiments, the low-power consumption reference circuit, it is comprised at least：One micro-current is produced
Raw circuit, its core is that metal-oxide-semiconductor is operated in sub-threshold region, therefore overall work electric current is the electric current of as little as na level, and power consumption is non-
It is often small；One reference generating circuit, using cascode structure, the precision of caused reference voltage is also very high, in circuit only
One triode and a resistance, therefore the area of overall circuit is very small.
Described micro-current generation circuit is made up of and the one or three PMOS PM1, PM2, PM3, PM4, NMOS tube NM8, NM9
Pole pipe Q1 is formed, and Q1 is equivalent to the diode of forward conduction, and its voltage is a threshold voltage, equivalent to NM8 pipes and NM9 pipes
Gate source voltage sum, then just force NM8 pipes to enter sub-threshold region, therefore caused electric current Ib is the low current of nA ranks.
The reference generating circuit by PMOS PM5, PM6, PM7, PM8, PM9, PM10, PM11, PM12, NMOS tube NM1,
NM2, NM3, NM4, NM5, NM6, NM7 and resistance R1 are formed；NM1, NM2, NM3, NM4, NM5, NM6, NM7 string in a manner of automatic biasing
It is linked togather, NM6 and NM7, NM4 and NM5, NM2 and NM3 are biased in subthreshold region all in identical p-well, and
And they all produce positive temperature coefficient voltage；The PMOS of mirror current source uses cascode structure, increases in biasing circuit
The stability of image current, increase interference free performance.PM1 pipes, PM2 pipes, PM3 pipes, PM4 pipes, PM5 pipes, PM6 pipes, PM7 pipes, PM8
Pipe, PM9 pipes, PM10 pipes, the size of PM11 pipes and PM12 pipes are just as.
Output end of the drain of PM9 pipes as reference voltage V REF, current flowing resistance R1 and NM1 pipe, in weak inversion regime
The diode connected transistor NM1 of work is used as negative temperature coefficient voltage, and finally going out to produce Positive and Negative Coefficient Temperature in VREF offsets
A magnitude of voltage.Resistance R1 auxiliary output voltage values reach the balance of temperature coefficient, that is, this road can be reduced by increasing resistance
Required electric current, can further save power consumption.
The present invention proposes a kind of low-power consumption reference circuit of no resistance, compared with other circuits, is not utilized in circuit
BJT, structure is simpler, and transistor is operated in subthreshold region in circuit, significantly reduces supply voltage and power consumption.The circuit is adopted
Designed with 0.18 μm of CMOS technology, whole circuit only has 15nA circuit, belongs to low-power consumption reference circuit, and circuit can be low
Worked under to 1V supply voltage, and 750mV output voltage, maximum and minimum value are provided in the range of -25 DEG C to 125 DEG C
Between voltage difference be only 1.6mV.
Although the present invention is illustrated using specific embodiment, the present invention's is not intended to limit to the explanation of embodiment
Scope.One skilled in the art is by reference to explanation of the invention, without departing substantially from the spirit and scope of the present invention
In the case of, easily carry out various modifications or embodiment can be combined, these also should be regarded as protection scope of the present invention.
Claims (1)
1. a kind of low-power consumption reference circuit being used in radio frequency, including：
One micro-current generation circuit, its core is that metal-oxide-semiconductor is operated in sub-threshold region, therefore overall work electric current is as little as na level
Electric current, power consumption is very small；One reference generating circuit, using cascode structure, the precision of caused reference voltage is also very
Height, the area of overall circuit are also very small；It is characterized in that：The micro-current generation circuit is by the first PMOS PM1, second
PMOS PM2, the 3rd PMOS PM3, the 4th PMOS PM4, the first PNP triode Q1, the 8th NMOS tube NM8 and the 9th NMOS
Pipe NM9 is formed, and the source electrode of PM1 pipes and the source electrode of PM2 pipes be all connected with supply voltage VDD, PM2 grid and PM1 grid,
The PM3 drain electrode of grid, PM3, the drain electrode of PM4 grid, NM8 is connected；PM2 drain electrode is connected with PM4 source electrode；PM1
Drain electrode PM3 source electrode be connected；PM4 drain electrode is connected with Q1 emitter stage, NM8 grid；NM8 source electrode and NM9's
The drain electrode of grid, NM9 is connected；Q1 base stage, Q1 colelctor electrode, NM9 source ground；The reference generating circuit is by the 5th
PMOS PM5, the 6th PMOS PM6, the 7th PMOS PM7, the 8th PMOS PM8, the 9th PMOS PM9, the tenth PMOS
PM10, the 11st PMOS PM11, the 12nd PMOS PM12, the first NMOS tube NM1, the second NMOS tube NM2, the 3rd NMOS tube
NM3, the 4th NMOS tube NM4, the 5th NMOS tube NM5, the 6th NMOS tube NM6, the 7th NMOS tube NM7, first resistor R1 are formed；
The source electrode of PM5 pipes, the source electrode of PM6 pipes, the source electrode of PM7 pipes, the source electrode of PM8 pipes are all connected with supply voltage VDD；PM5 pipes
Grid, the grid of PM6 pipes, the grid of PM7 pipes, PM8 grid, the grid of PM9 pipes, the grid of PM10 pipes, PM11 pipes grid,
The grid of PM12 grid and PM2 pipes links together；PM8 drain electrode is connected with PM12 source electrode；PM12 drain and NM6
Drain, NM6 grid, NM7 grid be connected；NM6 source electrode is connected with NM7 drain, NM5 source electrode；NM7 source
Pole is grounded；PM7 drain electrode is connected with PM11 source electrode；PM11 drain and NM4 drain, NM4 grid, NM5 grid
It is connected；NM4 source electrode is connected with NM5 drain, NM3 source electrode；PM6 drain electrode is connected with PM10 source electrode；PM10
Drain be connected with NM2 grid, NM2 drain, NM3 grid；NM2 source electrode and NM3 drain, NM1 source electrode phase
Connection；PM5 drain electrode is connected with PM9 source electrode；PM9 drain is connected with resistance R1 one end, and its node is as benchmark
Voltage VREF output end；The resistance R1 other end is connected with NM1 grid, NM1 drain.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711016350.7A CN107861556A (en) | 2017-10-25 | 2017-10-25 | A kind of low-power consumption reference circuit being used in radio frequency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711016350.7A CN107861556A (en) | 2017-10-25 | 2017-10-25 | A kind of low-power consumption reference circuit being used in radio frequency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107861556A true CN107861556A (en) | 2018-03-30 |
Family
ID=61696886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711016350.7A Pending CN107861556A (en) | 2017-10-25 | 2017-10-25 | A kind of low-power consumption reference circuit being used in radio frequency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107861556A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108427471A (en) * | 2018-06-05 | 2018-08-21 | 北京中电华大电子设计有限责任公司 | A kind of zero-temperature coefficient super low-power consumption reference voltage circuit |
| CN117742440A (en) * | 2024-02-19 | 2024-03-22 | 昱兆微电子科技(上海)有限公司 | Low-power consumption reference voltage source |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120025801A1 (en) * | 2010-07-30 | 2012-02-02 | Tetsuya Hirose | Reference current source circuit including added bias voltage generator circuit |
| CN103699167A (en) * | 2012-09-28 | 2014-04-02 | 上海华虹集成电路有限责任公司 | Reference voltage circuit for radiofrequency identification |
| CN204462924U (en) * | 2015-03-26 | 2015-07-08 | 厦门新页科技有限公司 | Reference voltage circuit |
| CN104950971A (en) * | 2015-06-11 | 2015-09-30 | 中国人民解放军国防科学技术大学 | Low-power-consumption sub-threshold type CMOS band gap reference voltage circuit |
| CN105786082A (en) * | 2016-05-30 | 2016-07-20 | 江南大学 | Band-gap reference voltage source without resistor or operational amplifier |
-
2017
- 2017-10-25 CN CN201711016350.7A patent/CN107861556A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120025801A1 (en) * | 2010-07-30 | 2012-02-02 | Tetsuya Hirose | Reference current source circuit including added bias voltage generator circuit |
| CN103699167A (en) * | 2012-09-28 | 2014-04-02 | 上海华虹集成电路有限责任公司 | Reference voltage circuit for radiofrequency identification |
| CN204462924U (en) * | 2015-03-26 | 2015-07-08 | 厦门新页科技有限公司 | Reference voltage circuit |
| CN104950971A (en) * | 2015-06-11 | 2015-09-30 | 中国人民解放军国防科学技术大学 | Low-power-consumption sub-threshold type CMOS band gap reference voltage circuit |
| CN105786082A (en) * | 2016-05-30 | 2016-07-20 | 江南大学 | Band-gap reference voltage source without resistor or operational amplifier |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108427471A (en) * | 2018-06-05 | 2018-08-21 | 北京中电华大电子设计有限责任公司 | A kind of zero-temperature coefficient super low-power consumption reference voltage circuit |
| CN117742440A (en) * | 2024-02-19 | 2024-03-22 | 昱兆微电子科技(上海)有限公司 | Low-power consumption reference voltage source |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107894803A (en) | A kind of bias-voltage generating circuit in Internet of Things | |
| CN101930248B (en) | Adjustable negative voltage reference circuit | |
| CN103488227B (en) | Band-gap reference voltage circuit | |
| CN107340796B (en) | A kind of non-resistance formula high-precision low-power consumption a reference source | |
| CN104238611B (en) | Current-mode band gap current reference | |
| CN202083976U (en) | High-precision CMOS (Complementary Metal Oxide Semiconductor) band-gap reference circuit | |
| CN106527572A (en) | CMOS subthreshold reference circuit with low power dissipation and low temperature drift | |
| CN101901018B (en) | Voltage reference circuit | |
| CN103294100B (en) | Reference current source circuit compensating resistor temperature drift coefficient | |
| CN105022441A (en) | Temperature-independent current reference | |
| CN108415503A (en) | A kind of low-voltage and low-power dissipation reference circuit | |
| CN104076856B (en) | A kind of super low-power consumption non-resistance non-bandgap reference source | |
| CN207352505U (en) | A kind of non-resistance formula high-precision low-power consumption a reference source | |
| CN103399612B (en) | Resistance-less bandgap reference source | |
| CN104714590A (en) | NMOS drive output band-gap reference circuit | |
| CN102662427A (en) | Voltage source circuit | |
| CN107861556A (en) | A kind of low-power consumption reference circuit being used in radio frequency | |
| CN208188714U (en) | A kind of low voltage reference circuit | |
| CN208188713U (en) | A kind of low-voltage and low-power dissipation reference circuit | |
| CN108958347A (en) | A kind of reference circuit with negative-feedback | |
| CN203870501U (en) | Temperature-independent integrated circuit current reference | |
| CN102809979B (en) | Third-order compensation band-gap reference voltage source | |
| CN208188720U (en) | A kind of super low-power consumption reference circuit | |
| CN111381625B (en) | Reference source circuit | |
| CN102854913A (en) | Band-gap reference voltage source circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180330 |
|
| WD01 | Invention patent application deemed withdrawn after publication |