CN107851600A - 支承销和成膜装置 - Google Patents
支承销和成膜装置 Download PDFInfo
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Abstract
本发明提供抑制破损的支承销和具有该支承销的成膜装置。支承销具有:支承基板的头部和支承该头部的支承筒,上述头部和支承筒分别设置有供用于将上述头部和支承筒联结的联结构件插入的贯通孔,上述支承销布置于用于在上述基板上形成膜的成膜装置的反应室中,上述头部具有:载置上述基板的载置部和从该载置部突出并被插入上述支承筒的端部的插入部,上述插入部具有在上述支承筒的径向上的尺寸比上述支承筒的内径大的大尺寸部分,在上述支承筒的上述端部设置有供上述大尺寸部分插入的沟槽。
Description
技术领域
本发明涉及支承基板的支承销和在被该支承销支承的基板形成膜的成膜装置。
背景技术
目前为止,对于在基板形成膜的成膜装置,例如提出了CVD(化学气相沉积)装置(例如参照专利文献1)。成膜装置具有:反应室;和配置于该反应室中的、支承基板的承受器。承受器可升降地构成,具有上下贯通的多个贯通孔。将设置于反应室的底部的支承销插入各贯通孔。
如下所述进行成膜。承受器下降,支承销的上部位于承受器的上侧。搬运装置将基板搬运至反应室,支承销支承所搬运的基板。承受器上升,承受器支承基板。向反应室内供给气体,在基板形成膜。
现有技术文献
专利文献
专利文献1:日本特开2012-237026号公报
发明内容
发明要解决的课题
支承销具有:上下延伸的支承筒;和插入了该支承筒的上端部的头部。在头部和支承筒中设置有贯通孔。将联结构件插入贯通孔,将头部和支承筒联结。利用搬运装置反复进行基板在反应室中的搬入搬出,将基板反复载置于头部。由于贯通孔,头部的强度降低,由于反复载置基板,因此头部有可能破损。
本发明鉴于该实际情况而完成,目的在于提供抑制破损的支承销和具有该支承销的成膜装置。
用于解决课题的手段
本发明涉及的支承销具有:支承基板的头部和支承该头部的支承筒,在上述头部和支承筒分别设置有供用于将上述头部和支承筒联结的联结构件插入的贯通孔,该支承销布置于在上述基板上形成膜的成膜装置的反应室中,其特征在于,上述头部具有:载置上述基板的载置部和从该载置部突出并被插入上述支承筒的端部的插入部,上述插入部具有在上述支承筒的径向上的尺寸比上述支承筒的内径大的大尺寸部分,在上述支承筒的上述端部设置有供上述大尺寸部分插入的沟槽。
本发明涉及的支承销,其特征在于,上述插入部具有上述径向的尺寸与上述支承筒的内径对应的小尺寸部分,上述大尺寸部分在径向上从上述小尺寸部分向外突出。
本发明涉及的支承销,其特征在于,上述插入部具有上述径向的尺寸与上述支承筒的内径对应的小尺寸部分,上述大尺寸部分在上述支承筒的轴向上从上述载置部突出,上述小尺寸部分在上述轴向上从上述大尺寸部分的突出端部突出。
本发明涉及的成膜装置,其特征在于,具有:上述任一项的支承销和容纳该支承销的反应室。
本发明中,在插入部形成大尺寸部分,使头部的强度提高。
本发明中,不仅形成大尺寸部分,而且也形成小尺寸部分,进一步使头部的强度提高。
本发明中,由大尺寸部分和小尺寸部分形成台阶,将小尺寸部分插入支承筒,抑制头部的摇动。
发明的效果
本发明涉及的支承销和成膜装置由于在插入部形成大尺寸部分,使头部的强度提高,因此能够抑制头部的破损。
附图说明
图1是简要表示实施方式1涉及的成膜装置的构成的侧面截面图。
图2是简要表示承受器和支承销的侧面截面图。
图3是简要表示支承销的构成的放大分解斜视图。
图4是简要表示实施方式2涉及的成膜装置的头部的构成的放大分解斜视图。
图5是将图4的V-V线作为剖线的简要截面图。
图6是实施方式3涉及的成膜装置的插入部的简要截面图。
图7是简要表示实施方式4涉及的成膜装置的支承销的部分放大分解斜视图。
图8是简要表示支承销的部分放大纵截面图。
具体实施方式
(实施方式1)
以下基于表示实施方式1涉及的成膜装置的附图对本发明进行说明。图1为简要表示成膜装置的构成的侧面截面图,图2为简要表示承受器和支承销的侧面截面图。
成膜装置具有反应室1。经由供给管3,将供给用于成膜的气体的气体供给部2连接至反应室1。在反应室1的侧面设置有用于将基板10搬入和搬出的搬入搬出口4。经由排气管6将真空泵5连接至反应室1。
在反应室1的上侧设置有将气体分散的扩散器7。扩散器7连接至供给管3,也作为上部电极发挥功能。在反应室1的底面立设有支承基板10的多个支承销9。在反应室1的下侧设置有支承基板10、在前后左右延伸的平板状的承受器8。在承受器8中设置有上下贯通的多个销用孔8a。销用孔8a呈与支承销9对应的形状。将支承销9插入销用孔8a中。承受器8可上下移动地构成。承受器8也作为下部电极发挥功能。将扩散器7和承受器8连接至施加电压的电压施加装置(省略图示)。
成膜如下所述进行。如图2的箭头所示那样,承受器8下降,支承销9的上部位于承受器8的上侧。通过搬运装置(省略图示)将基板10从搬入搬出口4搬入反应室1。支承销9支承所搬运的基板10。然后,承受器8上升,支承基板10。将气体从气体供给部2供给至反应室1内,通过电压施加装置对扩散器7和承受器8施加电压,将膜形成于基板10。膜形成后,利用真空泵5对反应室1内的气体进行排气。
图3为简要表示支承销9的构成的放大分解斜视图。支承销9具有:在反应室1中立设的支承筒20、和被该支承筒20的上端部支承的头部30。在支承筒20的上端面形成了二个沟槽21、21。将沟槽21形成为上端侧开口的コ字状,在轴向上延伸。沟槽21在径向上贯通。二个沟槽21、21在径向上对置。
在支承筒20的上端部圆周面形成了在径向上贯通的二个长孔22、22。长孔22在轴向上延伸。围绕着轴,将长孔22配置于相对于沟槽21偏移大致90度的位置,二个长孔22、22在径向上对置。二个沟槽21、21以及二个长孔22、22相距90度的位相,围绕着轴交替地配置。
头部30具有:将基板10载置于一面的圆盘状的载置部31、和从该载置部31的另一面突出的板状的插入部32。载置部31的直径为支承筒20的外径以上。上述载置部31的径向上的插入部32的尺寸(以下将载置部31的径向上的尺寸称为横向尺寸)为载置部31的直径以下,另外与支承筒20的外径大致相同。即,插入部32的横向尺寸比支承筒20的内径大。插入部32构成大尺寸部分。再有,可以使插入部32的横向尺寸比载置部31的直径大。
载置部31的轴向上的插入部32的尺寸与支承筒20的轴向上的沟槽21的尺寸(深度)大致相同。在插入部32中设置有与长孔22对应的贯通孔33。
使贯通孔33和长孔22对应,将插入部32插入了沟槽21。将棒状的联结构件40例如铝构件分别插入长孔22、22和贯通孔33,将支承筒20和插入部32贯通。将从长孔22、22突出的联结构件40的端部铆接,通过铆接将头部30和支承筒20联结。再有,支承筒20的轴向上的贯通孔33的位置为尺寸公差的范围内,有时在每个头部30中是不同的,通过使支承筒20的贯通的孔成为长孔22,从而防止贯通孔33的尺寸公差对头部30和支承筒20的组装产生影响。
插入部32的横向尺寸比支承筒20的内径大,因此将与载置部31的径向平行的面作为切断面的贯通孔33附近的插入部32的截面积与将插入部32的横向尺寸设定为支承筒20的内径以下时相比要大。因此,头部30的强度提高,能够抑制头部30的破损。再有,可在载置部31与插入部32之间设置用于补强的肋拱。
(实施方式2)
以下基于表示实施方式2涉及的成膜装置的附图对本发明进行说明。图4为简要表示头部30的构成的放大分解斜视图,图5为将图4的V-V线作为剖线的简要截面图。插入部34具有:从载置部31的另一面突出、具有与支承筒20的内径大致相同的直径的圆柱状的小尺寸部分34a;从该小尺寸部分34a的外周面在径向上突出的长方体状的二个大尺寸部分34b、34b。二个大尺寸部分34b、34b彼此在相反方向上突出。二个大尺寸部分34b、34b之间的横向尺寸与支承筒20的外径大致相同。在小尺寸部分34a设置有在轴向上贯通的贯通孔33。
贯通孔33围绕着轴,配置在从大尺寸部分34b偏移90度的位置,另外,配置于与长孔22对应的位置。使贯通孔33和长孔22对应,将大尺寸部分34b、34b插入沟槽21、21,将小尺寸部分34a插入支承筒20的内周。将联结构件40分别插入长孔22和贯通孔33。
插入部34不仅具有大尺寸部分34b,而且也具有小尺寸部分34a,因此贯通孔33附近的插入部34的截面积变得更大,能够进一步提高头部30的强度。再有,在载置部31与小尺寸部分34a之间可设置用于补强的肋拱。
在实施方式2涉及的成膜装置的构成中,对于与实施方式1同样的构成,标记相同的附图标记,省略其详细的说明。
(实施方式3)
以下基于表示实施方式3涉及的成膜装置的附图对本发明进行说明。图6为插入部34的简要截面图。在将支承筒20的内周形成为平面矩形的情况下,如图6中所示那样,小尺寸部分34c也形成为平面矩形。再有,使截面积变得比图5的支承销大的情况下,可设计支承销9以致图6的矩形与图5的小尺寸部分34a的圆形外接。
在实施方式3涉及的成膜装置的构成中,对于与实施方式1或2同样的构成,标记相同的附图标记,省略其详细的说明。
(实施方式4)
以下基于表示实施方式4涉及的成膜装置的附图对本发明进行说明。图7为简要表示支承销9的部分放大分解斜视图,图8为简要表示支承销9的部分放大纵截面图。应予说明,图7和图8中省略了联结构件40的记载。
插入部35具有:从载置部31的另一面突出的板状的大尺寸部分35a和从该大尺寸部分35a的突出端部突出的圆柱状的小尺寸部分35b。大尺寸部分35a的横向尺寸与支承筒20的外径大致相同,小尺寸部分35b的直径与支承筒20的内径大致相同。由大尺寸部分35a和小尺寸部分35b形成了台阶高差。
在大尺寸部分35a中设置有与长孔22、22对应的贯通孔33。使贯通孔33对应于长孔22,将小尺寸部分35b插入了支承筒20的内周,将大尺寸部分35a插入了沟槽21。将联结构件40分别插入了长孔22、22和贯通孔33。
由大尺寸部分35a和小尺寸部分35b形成台阶,将小尺寸部分35b插入了支承筒20,因此抑制头部30在径向上的摇动。
在实施方式4涉及的成膜装置的构成中,对于与实施方式1~3同样的构成,标记相同的附图标记,省略其详细的说明。
此次公开的实施方式在所有方面都为例示,应认为不具限制性。能够将各实施例中记载的技术特征相互地组合,意在使本发明的范围包含权利要求中的全部的变形和与权利要求同等的范围。
附图标记的说明
1 反应室
9 支承销
10 基板
20 支承筒
21 沟槽
30 头部
31 载置部
32、34、35 插入部
33 贯通孔
34a、34c、35b 小尺寸部分
34b、35a 大尺寸部分
40 联结构件。
Claims (4)
1.支承销,其具有:支承基板的头部和支承该头部的支承筒,在所述头部和支承筒分别设置有供用于将所述头部和支承筒联结的联结构件插入的贯通孔,所述支承销布置于用于在所述基板上形成膜的成膜装置的反应室中,其特征在于,所述头部具有:载置所述基板的载置部和从所述载置部突出并被插入所述支承筒的端部的插入部,所述插入部具有在所述支承筒的径向上的尺寸比所述支承筒的内径大的大尺寸部分,在所述支承筒的所述端部设置有供所述大尺寸部分插入的沟槽。
2.根据权利要求1所述的支承销,其特征在于,所述插入部具有在所述径向上的尺寸与所述支承筒的内径对应的小尺寸部分,所述大尺寸部分在径向上从所述小尺寸部分向外突出。
3.根据权利要求1所述的支承销,其特征在于,所述插入部具有在所述径向上的尺寸与所述支承筒的内径对应的小尺寸部分,所述大尺寸部分在所述支承筒的轴向上从所述载置部突出,所述小尺寸部分在所述轴向上从所述大尺寸部分的突出端部突出。
4.成膜装置,其特征在于,具有:根据权利要求1-3中任一项所述的支承销和容纳该支承销的反应室。
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US6319569B1 (en) * | 1998-11-30 | 2001-11-20 | Howmet Research Corporation | Method of controlling vapor deposition substrate temperature |
US20030205329A1 (en) * | 2000-02-28 | 2003-11-06 | Rudolf Gujer | Semiconductor wafer support lift-pin assembly |
CN101276777A (zh) * | 2007-03-27 | 2008-10-01 | 东京毅力科创株式会社 | 基板载置台以及基板处理装置 |
CN101542711A (zh) * | 2007-02-13 | 2009-09-23 | 东京毅力科创株式会社 | 基板位置检测装置及其摄像部件位置调整方法 |
US20140202382A1 (en) * | 2013-01-21 | 2014-07-24 | Asm Ip Holding B.V. | Deposition apparatus |
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JP2012087336A (ja) * | 2010-10-18 | 2012-05-10 | Seiko Epson Corp | 基板処理装置、基板処理室のクリーニング方法、および電気光学装置の製造方法 |
JP2012237026A (ja) | 2011-05-10 | 2012-12-06 | Tokyo Electron Ltd | 成膜装置 |
JP2014225585A (ja) * | 2013-05-17 | 2014-12-04 | 株式会社岡本工作機械製作所 | スピナーおよび基板搬送機器を用いて半導体基板をスピナーに受け渡す方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6319569B1 (en) * | 1998-11-30 | 2001-11-20 | Howmet Research Corporation | Method of controlling vapor deposition substrate temperature |
US20030205329A1 (en) * | 2000-02-28 | 2003-11-06 | Rudolf Gujer | Semiconductor wafer support lift-pin assembly |
CN101542711A (zh) * | 2007-02-13 | 2009-09-23 | 东京毅力科创株式会社 | 基板位置检测装置及其摄像部件位置调整方法 |
CN101276777A (zh) * | 2007-03-27 | 2008-10-01 | 东京毅力科创株式会社 | 基板载置台以及基板处理装置 |
US20140202382A1 (en) * | 2013-01-21 | 2014-07-24 | Asm Ip Holding B.V. | Deposition apparatus |
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US10662530B2 (en) | 2020-05-26 |
WO2017017821A1 (ja) | 2017-02-02 |
US20180171474A1 (en) | 2018-06-21 |
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