CN107845575A - 一种薄片二极管的生产方法 - Google Patents

一种薄片二极管的生产方法 Download PDF

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CN107845575A
CN107845575A CN201711069014.9A CN201711069014A CN107845575A CN 107845575 A CN107845575 A CN 107845575A CN 201711069014 A CN201711069014 A CN 201711069014A CN 107845575 A CN107845575 A CN 107845575A
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diode
backlight unit
diode chip
geometrically
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段利军
苏力
周韬平
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Zhejiang Renhe Solar Technology Co Ltd
Renhe Photovoltaic Technology Co Ltd
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Zhejiang Renhe Solar Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66128—Planar diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49544—Deformation absorbing parts in the lead frame plane, e.g. meanderline shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49575—Assemblies of semiconductor devices on lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种薄片二极管的生产方法，取整块导电金属片，在几何上分为A区和B区，在A区开设通槽，A区和B区仍然连为一体；在B区安装二极管芯片；在二极管芯片上安装跳线，与A区相连；封装二极管芯片；沿A区通槽上的合适位置进行裁切，令A区和B区在几何上相分离。本发明在初始状态下二极管正负极端为连接状态，封装后进行切断处理，这样可以有效的避免了焊接跳线后以及封装过程中产生的变形力损坏芯片。

Description

一种薄片二极管的生产方法
技术领域
本发明属于太阳能电池技术领域，特别涉及一种薄片二极管的生产方法。
背景技术
太阳能电池又称为“太阳能芯片”或“光电池”，是一种利用太阳光直接发电的光电半导体薄片。它只要被满足一定照度条件的光照到，瞬间就可输出电压及在有回路的情况下产生电流。太阳能接线盒用于保护整个发电系统，起到电流中转站的作用，如果组件短路接线盒自动断开短路电池串，防止烧坏整个系统接，线盒中最关键的是二极管的选用，根据组件内电池片的类型不同，对应的二极管也不相同。二极管在生产过程中往往需要经过焊接跳线以及封装等工序，而在这些工序中，二极管本体上的芯片容易受到外力，当外力作用在本体上是，造成本体破损或隐患。
发明内容
本发明的目的是提供一种能够有效避免焊接跳线后以及封装过程中的变形力损坏芯片的薄片二极管的生产方法。
为此，本发明的技术方案是：一种薄片二极管的生产方法，其特征在于：包括以下步骤：
1）取整块导电金属片，在几何上分为A区和B区，在A区开设通槽，A区和B区仍然连为一体；
2）在B区安装二极管芯片；
3）在二极管芯片上安装跳线，与A区相连；
4）封装二极管芯片；
5）沿A区通槽上的合适位置进行裁切，令A区和B区在几何上相分离。
本发明采用导电金属片作为框架，比传统的D2pak封装具有更加良好的导电及散热性能；所述的A区和B区为二极管正负极端，在初始状态下二极管正负极端为连接状态，封装后进行切断处理，这样可以有效的避免了焊接跳线后以及封装过程中产生的变形力损坏芯片；切断后的成品二极管正负极俩端框架强度不同，在实际应用中有外力作用时，强度弱的一侧优先发生形变，避免外力均作用在本体上，造成本体破损或隐患。同时，二极管的正负极俩端框架可以做成尺寸和形状不同，有利于后期安装的防呆。
附图说明
以下结合附图和本发明的实施方式来作进一步详细说明
图1为本发明A区和B区中间相连的生产过程图；
图2为本发明A区和B区单边相连的生产过程图；
图3为本发明A区和B区双边相连的生产过程图。
图中标记为：框架1、通槽11、芯片2、跳线3、本体4。
具体实施方式
参见附图。本实施例所述二极管包括框架1、芯片2、跳线3、本体4四部分组成，生产过程如下：
1）框架1采取整块导电金属片，在几何上分为A区和B区，在A区开设通槽11，A区和B区仍然连为一体；如图1的（a）所示，A区上下两端开设通槽，使得A区和B区仅仅通过中间相连；如图2的（a）所示，A区下方开设通槽，使得A区和B区仅仅通过上方单边相连；如图3的（a）所示，A区中间开设通槽，使得A区和B区通过上方以及下方双边相连；
2）在B区安装二极管芯片2；如图1、图2、图3中的（b）所示；
3）在二极管芯片2上安装跳线3，与A区相连；如图1的（c）所示，二极管芯片上安装2段跳线与A区上下两端相连；如图2、图3的（c）所示，二极管芯片上安装单段跳线与A区中间位置相连；
4）封装二极管芯片2；如图1、图2、图3中的（d）所示，封装的部位为二极管的本体4；
5）沿A区通槽11上的合适位置进行裁切，令A区和B区在几何上相分离；如图1的（e）（f）所示，在A区和B区中间相连的位置进行裁切，令A区和B区在几何上相分离；如图2的（e）（f）所示，在A区和B区上方单边相连的位置进行裁切，令A区和B区在几何上相分离；如图3的（e）（f）所示，在A区和B区上方以及下方双边相连的位置进行裁切，令A区和B区在几何上相分离。

Claims (1)

1.一种薄片二极管的生产方法，其特征在于：包括以下步骤：
1）取整块导电金属片，在几何上分为A区和B区，在A区开设通槽，A区和B区仍然连为一体；
2）在B区安装二极管芯片；
3）在二极管芯片上安装跳线，与A区相连；
4）封装二极管芯片；
5）沿A区通槽上的合适位置进行裁切，令A区和B区在几何上相分离。
CN201711069014.9A 2017-11-03 2017-11-03 一种薄片二极管的生产方法 Pending CN107845575A (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559749A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Lead frame
US4797726A (en) * 1981-02-10 1989-01-10 Pioneer Electronic Corporation Lead frame including deformable plates
JPH01158756A (ja) * 1987-12-16 1989-06-21 Sanken Electric Co Ltd 樹脂封止型半導体装置の製造方法
JPH04211138A (ja) * 1991-02-15 1992-08-03 Sanken Electric Co Ltd 樹脂封止形半導体装置の製造方法
CN1122517A (zh) * 1994-10-31 1996-05-15 戴超智 以片状材料层叠结构的半导体二极管制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5559749A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Lead frame
US4797726A (en) * 1981-02-10 1989-01-10 Pioneer Electronic Corporation Lead frame including deformable plates
JPH01158756A (ja) * 1987-12-16 1989-06-21 Sanken Electric Co Ltd 樹脂封止型半導体装置の製造方法
JPH04211138A (ja) * 1991-02-15 1992-08-03 Sanken Electric Co Ltd 樹脂封止形半導体装置の製造方法
CN1122517A (zh) * 1994-10-31 1996-05-15 戴超智 以片状材料层叠结构的半导体二极管制造方法

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Application publication date: 20180327