CN107818971A - 功率转换模块 - Google Patents

功率转换模块 Download PDF

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Publication number
CN107818971A
CN107818971A CN201610826033.0A CN201610826033A CN107818971A CN 107818971 A CN107818971 A CN 107818971A CN 201610826033 A CN201610826033 A CN 201610826033A CN 107818971 A CN107818971 A CN 107818971A
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CN
China
Prior art keywords
wiring area
wiring
electrically connected
terminal
power conversion
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Granted
Application number
CN201610826033.0A
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English (en)
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CN107818971B (zh
Inventor
洪守玉
程娟
王涛
赵振清
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Delta Electronics Shanghai Co Ltd
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Delta Electronics Shanghai Co Ltd
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Priority to CN201610826033.0A priority Critical patent/CN107818971B/zh
Priority to US15/704,118 priority patent/US10097103B2/en
Publication of CN107818971A publication Critical patent/CN107818971A/zh
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Publication of CN107818971B publication Critical patent/CN107818971B/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/30—Means for acting in the event of power-supply failure or interruption, e.g. power-supply fluctuations
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
    • H02J9/00—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting
    • H02J9/04—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source
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    • H02J9/061—Circuit arrangements for emergency or stand-by power supply, e.g. for emergency lighting in which the distribution system is disconnected from the normal source and connected to a standby source with automatic change-over, e.g. UPS systems for DC powered loads
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
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Abstract

本申请公开了一种功率转换模块，包括：一基板，包括一布线层和一绝缘层，布线层包括：一第一布线区域和一第二布线区域；一电子器件，设置在第一布线区域上，分别与第一布线区域和第二布线区域电性连接；一垂直型功率器件，设置在第二布线区域上，与第二布线区域电性连接；以及一电容，设置于基板上，且设置于电子器件与垂直型功率器件之间，分别与电子器件和垂直型功率器件电性连接。该功率转换模块，将所有器件布设于同基板上，从而能够降低成本、提升良品率与可靠性、且能降低功率转换模块内部的寄生电感。

Description

功率转换模块
技术领域
本发明涉及电力电子领域，具体而言，涉及一种功率转换模块。
背景技术
电力电子转换装置中的功率开关器件通常在开关过程中会在线路中产生较大的电流变化率，而由于寄生电感的存在，会在功率开关器件上产生较高的电压尖峰，且寄生电感越大，电压尖峰值越高。过高的电压尖峰值会降低功率开关器件的可靠性，增加功率开关器件的开关损耗。因此在电力电子转换装置设计中提出了降低线路上寄生电感的要求。线路寄生电感降低后，会降低功率开关器件承受的电压尖峰值，允许功率开关器件使用更小的驱动电阻来达到更快的开关速度、降低开关损耗以提升效率。
线路寄生电感的大小与功率开关器件的封装及连接形式有关，因此目前通常采用减小功率开关器件连接形成的回路面积、电感抵消等方式来减小线路的寄生电感。
图1A示出了现有电力电子装置中的一种两电平拓扑电路的电路图，图1B示出了图1A所示的两电平拓扑电路的功率转换模块的俯视图，图1C示出了图1A所示的两电平拓扑电路的功率转换模块的剖面图。如图1A所示，在该两电平电路中，功率开关器件S1、S2为垂直型IGBT，S1、S2分别与二极管D1和D2反向并联，功率开关器件S1的漏极电性连接电容C的一端并引出正输入端Vbus+；功率开关器件S2的漏极电性连接功率开关器件S1的源极并引出AC端；功率开关器件S2的源极电性连接电容C的另一端并引出负输入端Vbus-，最终形成一个两电平桥臂。如图1B和图1C所示，该模块包含第一基板4与第二基板9，其中第一基板由导电层1、绝缘层2及导电层3组成，第二基板9由导电层6、绝缘层7及导电层8组成。导电层3和导电层6之间通过导电材料(图中未示出)电性连接。功率开关器件S1、S2、二极管D1及D2布设于导电层3上，电容C布设于导电层8上。键合引线11用于实现功率器件S1、S2、D1及D2与电容C之间的电气连接。该模块在实际工作时，功率开关器件S1、二极管D2和电容C形成一第一回路，该第一回路流经导电层3的电流与流经导电层8的电流方向相反，可以降低该第一回路的寄生电感。功率开关器件S2、二极管D1和电容C形成一第二回路，该第二回路流经导电层3的电流与流经导电层8的电流方向相反，同样可以降低该第二回路的寄生电感。
但该功率转换模块模块存在以下几点技术局限性：
(1)需要除上述第一基板4外额外的第二基板9作为电容C的载板，引起成本的增加；
(2)工艺难度的增加(如喷锡等)，造成良品率损失；
(3)多次回流焊会降低可靠性；
(4)两个基板的结构还会使模块高度增加，进一步使模块尺寸增加，引出引脚高度的增加会进一步导致寄生电感的增加。
在所述背景技术部分公开的上述信息仅用于加强对本发明的背景的理解，因此它可以包括不构成对本领域普通技术人员已知的现有技术的信息。
发明内容
有鉴于此，本发明提供一种功率转换模块，将所有器件布设于同基板上，从而能够降低成本、提升良率与可靠性、且能降低功率转换模块内部的寄生电感。
本发明的其他特性和优点将通过下面的详细描述变得显然，或部分地通过本发明的实践而习得。
根据本发明的一方面，提供一种功率转换模块，包括：一基板，基板包括一布线层和一绝缘层，布线层包括：一第一布线区域和一第二布线区域；一电子器件，设置在第一布线区域上，分别与第一布线区域和第二布线区域电性连接；一垂直型功率器件，设置在第二布线区域上，与第二布线区域电性连接；以及一电容，设置于基板上，且设置于电子器件与垂直型功率器件之间，分别与电子器件和垂直型功率器件电性连接；其中，第二布线区域形成有一第一电流路径和一第二电流路径，第一电流路径和第二电流路径分别位于电容的两侧，第一电流路径和第二电流路径相互平行且电流方向相同；电子器件、电容和垂直型功率器件之间形成有第三电流路径，第三电流路径与第一电流路径和第二电流路径相互平行且电流方向相反。
根据本发明的功率转换模块，可以降低器件S1、S2和电容C组成的换流回路的封装寄生电感。通过采用Ansys公司提供的电磁场仿真工具Q3D extractor对功率转换模块10的封装结构的寄生电感进行仿真，其小于相同仿真条件下传统封装结构中的回路寄生电感。此外，本发明的功率转换模块无需使用额外的基板用于承载电容，可节约成本，并可降低模块高度，减小模块尺寸，提高功率密度以及降低引出引脚的高度，从而进一步减小对应寄生电感及损耗。此外，还具有工艺难度低，及因消除多次回流焊而带来的可靠性高的优点。
应当理解的是，以上的一般描述和后文的细节描述仅是示例性的，并不能限制本发明。
附图说明
通过参照附图详细描述其示例实施例，本发明的上述和其它目标、特征及优点将变得更加显而易见。
图1A是根据一示例示出的现有电力电子装置中的典型两电平拓扑电路的电路图。
图1B示出了图1A所示的两电平拓扑电路的功率转换模块的俯视图。
图1C示出了图1A所示的两电平拓扑电路的功率转换模块的剖面图。
图2A和2B分别是根据一示例性实施方式示出的一种功率转换模块的俯视图及剖面图。
图2C和2D分别示出了图2A所示的功率转换模块10的电路原理图与电流流通方向示意图。
图2E是根据一示例性实施方式示出的另一种电容与基板的连接方式示意图。
图2F是根据一示例性实施方式示出的另一种功率转换模块的电路原理图。
图3是根据一示例性实施方式示出的另一种功率转换模块的俯视图。
图4是根据一示例性实施方式示出的再一种功率转换模块的俯视图。
图5A和5B分别是根据一示例性实施方式示出的再一种功率转换模块的俯视图及电流流通方向示意图。
图6A和图6B分别是根据一示例性实施方式示出的再一种功率转换模块的俯视图及电路图。
图7A和图7B分别是根据一示例性实施方式示出的再一种功率转换模块的俯视图及电路图。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的范例；相反，提供这些实施方式使得本发明将更加全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。附图仅为本发明的示意性图解，并非一定是按比例绘制。图中相同的附图标记表示相同或类似的部分，因而将省略对它们的重复描述。
此外，所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。在下面的描述中，提供许多具体细节从而给出对本发明的实施方式的充分理解。然而，本领域技术人员将意识到，可以实践本发明的技术方案而省略所述特定细节中的一个或更多，或者可以采用其它的方法、组元、装置、步骤等。在其它情况下，不详细示出或描述公知结构、方法、装置、实现、材料或者操作以避免喧宾夺主而使得本发明的各方面变得模糊。
图2A和2B分别是根据一示例性实施方式示出的一种功率转换模块的俯视图及剖面图。如图2A所示，该功率转换模块10包括：基板101、电子器件Sa、垂直型功率器件Sb以及电容C。其中，垂直型功率器件Sb为可控制开关器件，如MOSFET、IGBT等。电子器件Sa根据功率转换模块10的功能在实际应用中例如可以为垂直型功率器件、电阻、电容、电感、二极管等，本发明不以此为限。
其中基板101作为电子器件Sa、垂直型功率器件Sb及电容C的安装载板，包括至少一层绝缘层与至少一层导电层。基板101例如可以为单/双面直接敷铜陶瓷(DirectBonding Copper，DBC)基板，但本发明不以此为限，例如还可以为单/双面金属化陶瓷基板、高/低温共烧陶瓷基板(HTCC/LTCC)等。
以双面DBC基板为例，如图2A及2B所示，基板101包括第一导电层1011、绝缘层1012及第二导电层1013。其中第一导电层1011与第二导电层1013可以为铜层，绝缘层1012可以为陶瓷层。绝缘层1012设置于第一导电层1011的上方，第二导电层1013设置于绝缘层1012的上方，绝缘层1012的水平面积略大于第一导电层1011和第二导电层1013。第二导电层1013形成基板101的布线层，该布线层包括：第一布线区域WS1与第二布线区域WS2。
垂直型功率器件Sb设置于第二布线区域WS2上，并与第二布线区域WS2电性连接。垂直型功率器件Sb通常包含一上表面电极和一下表面电极，其下表面电极通过连接材料与第二布线区域WS2电性连接，以实现垂直型功率器件Sb与基板101的电气连接与机械连接。并且，垂直型功率器件Sb的下表面电极和上表面电极的连线垂直于第二布线区域WS2。电子器件Sa设置于第一布线区域WS1上，并与第二布线区域WS2电性连接。电子器件Sa包含一第一电极和一第二电极。
电容C设置于基板101上。图2A与2B示例性地示出了一种电容C与基板101的机械与电气连接关系，需要说明的是，电容C还可以以其他形式设置于基板101之上，本发明不以此为限。如图2E所示，电容C可以使用导线与基板101的布线区域连接。电容C通过固定材料M(如粘胶等)固定于基板101的绝缘层1012上，连接导线WL4和WL5别连接在电容的可打线焊盘pad1、pad2上。该连接方式可以节省电容C的布线区域，增大垂直型功率器件Sb对应的布线区域，利于散热。
再次参考图2A与2B，基板101的布线层还包括第三布线区域WS3和第四布线区域WS4。电容C包含第一端子和第二端子(第一端子和第二端子分别位于电容C与基板101相连接的一面，因此图中未示出)，该第一端子和第二端子分别通过连接材料p1、p2(如焊料)与第三布线区域WS3和第四布线区域WS4电性连接。电容C设置于电子器件Sa与垂直型功率器件Sb之间，与电子器件Sa和垂直型功率器件Sb电性连接。
不失一般性地，下文中以电子器件Sa的两电极连线同样垂直于基板为例，说明电子器件Sa、电容C与垂直型功率器件Sb之间的电性连接关系。参考图2A与2B，电子器件Sa的第一电极通过连接材料与第一布线区域WS1电性连接，第一布线区域WS1通过第二导线WL2与第三布线区域WS3电性连接，从而电性连接电子器件Sa的第一电极与电容C的第一端子。电子器件Sa的第二电极通过第一导线WL1与第二布线区域WS2电性连接，垂直型功率器件Sb的下表面电极通过连接材料与第二布线区域WS2电性连接，从而实现电子器件Sa的第二电极与垂直型功率器件Sb的下表面电极的电性连接。垂直型功率器件Sb的上表面电极通过第三导线WL3与第四布线区域WS4电性连接，从而电性连接电容C的第二端子。第一导线WL1、第二导线WL2及第三导线WL3例如可以为打线(wire bonding)，也可以是铜片，本发明不以此为限。第一电极与第一布线区域以及下表面电极与第二布线区域之间的连接材料，未在图中示出，可以为焊料等，本发明不以此为限。
图2C和2D分别示出了图2A所示的功率转换电路10的电路原理图与电流流通方向示意图。在图2C所示的电路原理图中，不失一般性地，电子器件Sa与垂直型功率器件Sb均以垂直型MOSFET为例。在其他实施例中，如图2F所示，Sa还可以为二极管，同样具有如图2D所示的电流流通方向。
图2C所示，实线箭头示出了从电子器件Sa的第一电极流出的流经电容C且流向垂直型功率器件Sb的上表面电极的电流路径。虚线箭头示出了从垂直型功率器件Sb的下表面电极流向电子器件Sa的第二电极的电流路径。再参考图2D，在功率转换模块10中，在电容C的两侧，在第二布线区域WS2中分别形成有第一电流路径L1和第二电流路径L2，该第一电流路径L1和第二电流路径L2相互平行且电流方向相同，可对应于图2C中虚线箭头所示的电流路径的一部分。此外，在电子器件Sa的第一电极、电容C与垂直型功率器件Sb的上表面电极之间还形成有第三电流路径L3，可对应于图2C中实线箭头所示的电流路径的一部分。第三电流路径L3与第一和第二电流路径L1和L2相互平行且电流方向相反，从而降低功率转换模块10的线路中的寄生电感。此外，流经第一导线WL1与流经第二导线WL2中的电流方向也相反，其也可以起到降低线路寄生电感的作用，从而降低功率器件开关时承受的电压尖峰值。
本发明实施方式的功率转换模块，可以降低器件S1、S2和电容C组成的换流回路的封装寄生电感。通过采用Ansys公司提供的电磁场仿真工具Q3D extractor对功率转换模块10的封装结构的寄生电感进行仿真，其提取的换流电路的回路寄生电感小于相同仿真条件下传统封装结构中的回路寄生电感。
此外，本发明实施方式的功率转换模块无需使用额外的基板用于承载电容，可节约成本，并可降低模块高度，减小模块尺寸，提高功率密度以及降低引出引脚的高度，从而进一步减小对应寄生电感及损耗。此外，还具有工艺难度低，及因消除多次回流焊而带来的可靠性高的优点。在一些实施例中，降低各导线的高度(如图2B中的高度h)也可以增加回路寄生电感的抵消程度，从而降低回路寄生电感。
应清楚地理解，本发明描述了如何形成和使用特定示例，但本发明的原理不限于这些示例的任何细节。相反，基于本发明公开的内容的教导，这些原理能够应用于许多其它实施方式。
图3是根据一示例性实施方式示出的另一种功率转换模块的俯视图。相比于图2A所示的功率转换模块10，图3所示的功率转换模块20的不同之处在于第二布线区域WS2在电容C的下方还包括垂直布线205来增加半导体器件的散热、通流面积，垂直布线205位于第三布线区域WS3与第四布线区域WS4之间。并且，经仿真工具Q3D extractor仿真验证表明，该结构产生的回路寄生电感相对于图2A所示的功率转换模块10的回路寄生电感略有减小。
图4是根据一示例性实施方式示出的再一种功率转换模块的俯视图。相比于图3所示的功率转换模块20，图4所示的功率转换模块30的不同之处在于使用电性连接第一布线区域WS1与第三布线区域WS3的第三水平布线305代替第二导线WL2，即第一布线区域WS1与第三布线区域为一体成型结构。这样的设计可以减少封装结构中的导线数量，从而增加可靠性。并且，经仿真工具Q3D extractor仿真验证表明，在相同的仿真条件下，当第三水平布线305的宽度W达到某一数值时，与图2A所示的功率转换模块10的封装结构产生的回路寄生电感大小一致；当第三水平布线305的宽度W小于该数值时，该结构产生的回路寄生电感低于图2A所示的功率转换模块10的回路寄生电感。
图5A和5B分别是根据一示例性实施方式示出的再一种功率转换模块的俯视图及电流流通方向示意图。如图5A所示，该电容C第一端子被分为两个彼此分隔的第一子端子和第二子端子，第二端子被分为两个彼此分隔的第三子端子和第四子端子。在该结构中，对应的电容宜采用带金属支架的型号，以便实现电容电极的分区连接。如图5A所示，第一布线区域WS1包括第一水平布线4051和第二水平布线4052，第一子端子通过对应的连接材料p11和第二子端子通过对应的连接材料p12分别设置于第一水平布线4051和第二水平布线4052上，与第一水平布线4051和第二水平布线4052电性连接，从而电容C的第一端子与电子器件Sa的第一电极电性连接。基板101的布线层还包括第五布线区域WS5和第六布线区域WS6，第三子端子通过对应的连接材料p21和第四子端子通过对应的连接材料p22分别设置于第五布线区域WS5和第六布线区域WS6上，且与第五布线区域WS5和第六布线区域WS6电性连接，第三导线WL3包括多个部分WL31’和WL32’，对应第五布线区域WS5和第六布线区域WS6，分别电性连接第五布线区域WS5和第六布线区域WS6与垂直型功率器件Sb的上表面电极，从而使电容C的第二端子与垂直型功率器件Sb的上表面电极电性连接。此外，在电容C尺寸允许的情况下，第二布线区域WS2还包括第四水平布线406，并通过第一导线WL1与电子器件Sa的第二电极电性连接，以在第二布线区域WS2形成穿过电容C在基板101上的投影的第四电流路径L4，第四电流路径L4与上述第一电流路径L1和第二电流路径L2相互平行且电流方向相同，从而增加流通电流方向与电容C中电流方向相反的布线的数量(如图5B所示)，加大电感抵消程度，进一步降低回路寄生电感。此外，图2D中的第三电流路径L3被分为第五电流子路径L5和第六电流子路径L6，其相互平行且电流方向相同，即第三电流路径L3包括相互平行且电流方向相同的第五电流子路径L5和第六电流子路径L6，第五电流子路径L5和第六电流子路径L6的电流方向与第四电流路径L4中的电流方向相反。其中第五电流子路径L5流经第一水平布线4051和第五布线区域WS5，第六电流子路径L6流经第二水平布线4051和第六布线区域WS6。经仿真工具Q3D extractor仿真验证表明，该结构产生的寄生回路电感相对于图2A所示的功率转换模块10产生的回路寄生电感有明显减小。
在功率需求较高的应用场景中，经常需要通过器件的并联来达到较高的电流输出能力。
图6A和图6B分别是根据一示例性实施方式示出的再一种功率转换模块的俯视图及电路图。如图6B所示，功率转换模块50的电路图仍以电子器件Sa和垂直型功率器件Sb采用MOSFET为例，与图2C所示的电路图不同的是，功率转换模块50中的电容C1～C3并联后一端连接到正输入端Vbus+，另一端连接到负输入端Vbus-。参考图6A，对应于多个电容C1～C3，基板101的布线层包括多个第三布线区域WS31～WS33及多个第四布线区域WS41～WS43。图6A中，以3个电容为例，3个电容C1～C3并排排布，分别对应3个第三布线区域WS31～WS33及3个第四布线区域WS41～WS43。各电容C1～C3的两端子分别对应电性连接各第三布线区域WS31～WS33及第四布线区域WS41～WS43。第二导线WL2包括多个部分WL21～WL23，分别与多个第三布线区域WS31～WS33对应，各部分第二导线WL21～WL23分别用于电性连接对应的第三布线区域WS31～WS33与第一布线区域WS1。第三导线WL3也包括多个部分WL31～WL33，分别与多个第四布线区域WS41～WS43对应，各部分第三导线WL31～WL33分别用于电性连接对应的第四布线区域WS41～WS43与垂直型功率器件Sb的上表面电极。该模块可以有效增加模块吸收输入纹波电流的能力。
图7A和图7B分别是根据一示例性实施方式示出的再一种功率转换模块的俯视图及电路图。如图7B所示，功率转换模块60的电路图仍以电子器件Sa和垂直型功率器件Sb采用MOSFET为例，与图6B所示的电路图不同的是，功率转换模块60包括多个电子器件Sa1～Sa3及多个垂直型功率器件Sb1～Sb3。其中电子器件Sa1～Sa3的漏极全部连接Vbus+，垂直型功率器件Sb1～Sb3的源极全部电性连接Vbus-，电子器件Sa1～Sa3的源极分别电连接垂直型功率器件Sb1～Sb3的漏极，并在连接点引出AC输出引脚。如图7A所示，多个电子器件Sa1～Sa3并排分布在第一布线区域WS1中，多个垂直型功率器件Sb1～Sb3并排分布在第二布线区域WS2中，多个电容C1～C3并排分布，各电容C1～C3的两个端子分别分布在对应的第三布线区域WS31～WS32和第四布线区域WS41～WS42中。第一导线WL1包括多个部分WL11～WL13，分别与多个电子器件Sa1～Sa3对应，分别电性连接多个电子器件Sa1～Sa3的第二电极与第二布线区域WS2。第二导线WL2也包括多个部分WL21～WL23，分别与多个第三布线区域WS31～WS33对应，分别电性连接多个第三布线区域WS31～WS33与第一布线区域WS1。第三导线WL3也包括多个部分WL31～WL33，分别与多个垂直型功率器件Sb1～Sb3及多个第四布线区域WS41～WS43对应，分别电性连接多个垂直型功率器件Sb1～Sb3的上表面电极与多个第四布线区域WS41～WS43。该结构在增加功率转换模块输入纹波吸收能力的同时，还可以增加模块的通流能力，从而能够输出更多的功率。
需要说明的是，图6A与图7A中第二布线区域WS2、第三布线区域WS31～WS33及第四布线区域WS41～WS43之间的布线方式是以图3所示实施方式的布线方式为示例，但本发明不限于此，也可以采用图2A、图4及图5A所示实施方式的布线方式。
以上具体地示出和描述了本发明的示例性实施方式。应可理解的是，本发明不限于这里描述的详细结构、设置方式或实现方法；相反，本发明意图涵盖包括在所附权利要求的精神和范围内的各种修改和等效设置。

Claims (16)

1.一种功率转换模块，其特征在于，包括：
一基板，所述基板包括一布线层和一绝缘层，所述布线层包括：一第一布线区域和一第二布线区域；
一电子器件，设置在所述第一布线区域上，分别与所述第一布线区域和所述第二布线区域电性连接；
一垂直型功率器件，设置在所述第二布线区域上，与所述第二布线区域电性连接；以及
一电容，设置于所述基板上，且设置于所述电子器件与所述垂直型功率器件之间，分别与所述电子器件和所述垂直型功率器件电性连接；
其中，所述第二布线区域形成有一第一电流路径和一第二电流路径，所述第一电流路径和所述第二电流路径分别位于所述电容的两侧，所述第一电流路径和所述第二电流路径相互平行且电流方向相同；所述电子器件、所述电容和所述垂直型功率器件之间形成有第三电流路径，所述第三电流路径与所述第一电流路径和所述第二电流路径相互平行且电流方向相反。
2.如权利要求1所述的功率转换模块，其特征在于，所述电容包括：一第一端子和一第二端子，所述垂直型功率器件包括：一上表面电极和一下表面电极，所述电子器件包括：一第一电极与一第二电极；其中，所述第一端子与所述第一电极电性连接，所述第二端子与所述上表面电极电性连接，所述第二电极与所述下表面电极电性连接。
3.如权利要求2所述的功率转换模块，其特征在于，所述上表面电极和所述下表面电极的连线垂直于所述基板；所述下表面电极与所述第二布线区域电性连接，且所述下表面电极比所述上表面电极更靠近所述第二布线区域。
4.如权利要求3所述的功率转换模块，其特征在于，所述第一电极与所述第二电极的连线垂直于所述基板；所述第一电极与所述第一布线区域电性连接，且所述第一电极比所述第二电极更靠近所述第一布线区域。
5.如权利要求4所述的功率转换模块，其特征在于，所述第二电极与所述第二布线区域通过一第一导线电性连接。
6.如权利要求5所述的功率转换模块，其特征在于，所述第一端子和所述第二端子设置于所述绝缘层上；且所述第一端子和所述第一布线区域通过一第四导线电性连接，所述第二端子和所述上表面电极通过一第五导线电性连接。
7.如权利要求5所述的功率转换模块，其特征在于，所述布线层还包括：第三布线区域和第四布线区域；所述第一端子设置于所述第三布线区域上，与所述第三布线区域电性连接，且所述第三布线区域与所述第一布线区域电性连接；所述第二端子设置于所述第四布线区域上，与所述第四布线区域电性连接，且所述第四布线区域与所述上表面电极通过一第三导线电性连接。
8.如权利要求7所述的功率转换模块，其特征在于，所述第一布线区域与所述第三布线区域通过一第二导线电性连接。
9.如权利要求7所述的功率转换模块，其特征在于，所述第一布线区域与所述第三布线区域一体成型。
10.如权利要求8所述的功率转换电路，其特征在于，包括多个所述电容、多个所述第三布线区域及多个所述第四布线区域；各所述电容的第一端子分别设置于对应的所述第三布线区域，且与对应的所述第三布线区域电性连接；各所述电容的第二端子分别设置于对应的所述第四布线区域，且与对应的所述第四布线区域电性连接；所述第二导线包括多个部分，所述第一布线区域通过所述第二导线的多个部分与多个所述第三布线区域电性连接；所述第三导线包括多个部分，所述上表面电极通过所述第三导线的多个部分与多个所述第四布线区域电性连接。
11.如权利要求8所述的功率转换电路，其特征在于，包括多个所述电容、多个所述电子器件、多个所述垂直型功率器件、多个所述第三布线区域及多个所述第四布线区域；各所述电容的第一端子分别设置于对应的所述第三布线区域，且与对应的所述第三布线区域电性连接；各所述电容的第二端子分别设置于对应的所述第四布线区域，且与对应的所述第四布线区域电性连接；所述第一导线包括多个部分，各所述电子器件的第二电极分别通过对应的第一导线部分与所述第二布线区域电性连接；所述第二导线包括多个部分，所述第一布线区域通过所述第二导线的多个部分与多个所述第三布线区域电性连接；所述第三导线包括多个部分，各所述垂直型功率器件的上表面电极分别通过所述第三导线的多个部分与多个所述第四布线区域电性连接。
12.如权利要求8至11中任一项所述的功率转换模块，其特征在于，所述第二布线区域包括布设于所述电容下方的垂直布线，所述垂直布线位于所述第三布线区域与所述第四布线区域之间。
13.如权利要求5所述的功率转换模块，其特征在于，所述第一端子包括两个彼此分隔的第一子端子与第二子端子，所述第二端子包括两个彼此分隔的第三子端子与第四子端子；所述第二布线区域还形成有第四电流路径，所述第四电流路径穿过所述电容在所述基板上的投影，所述第四电流路径与所述第一电流路径和所述第二电流路径相互平行且电流方向相同。
14.如权利要求13所述的功率转换模块，其特征在于，所述第一布线区域包括：一第一水平布线和一第二水平布线，所述第一子端子与所述第二子端子分别设置于所述第一水平布线与所述第二水平布线上，且分别与所述第一水平布线与所述第二水平布线电性连接；所述布线层还包括：一第五布线区域和一第六布线区域，所述第三子端子与所述第四子端子分别设置于所述第五布线区域和所述第六布线区域，分别与所述第五布线区域和所述第六布线区域电性连接，且所述第五布线区域和所述第六布线区域分别通过一第三导线与所述上表面电极电性连接；
其中，所述第三电流路径包括一第五电流子路径和一第六电流子路径，所述第五电流子路径和所述第六电流子路径相互平行且电流方向相同；所述第五电流子路径和所述第六电流子路径与所述第四电流路径相互平行且电流方向相反；其中所述第五电流子路径流经所述第一水平布线与所述第五布线区域，所述第六电流子路径流经所述第二水平布线与所述第六布线区域。
15.如权利要求1所述的功率转换模块，其特征在于，所述电子器件为电容、电阻、电感或半导体器件。
16.如权利要求1所述的功率转换模块，其特征在于，所述垂直型功率器件为IGBT或MOSFET。
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