CN107768320A - Electronic package and manufacturing method thereof - Google Patents

Electronic package and manufacturing method thereof Download PDF

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Publication number
CN107768320A
CN107768320A CN201610686258.0A CN201610686258A CN107768320A CN 107768320 A CN107768320 A CN 107768320A CN 201610686258 A CN201610686258 A CN 201610686258A CN 107768320 A CN107768320 A CN 107768320A
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Prior art keywords
insulating layer
conductive
electronic
electronic package
electronic component
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Chinese (zh)
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胡竹青
许哲玮
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Phoenix Pioneer Technology Co Ltd
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Phoenix Pioneer Technology Co Ltd
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Priority to CN201610686258.0A priority Critical patent/CN107768320A/en
Publication of CN107768320A publication Critical patent/CN107768320A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation
    • H01L2924/1815Shape
    • H01L2924/1816Exposing the passive side of the semiconductor or solid-state body
    • H01L2924/18161Exposing the passive side of the semiconductor or solid-state body of a flip chip

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明公开一种电子封装件及其制法,该电子封装件包括绝缘层、嵌埋于该绝缘中的电子元件与导电凸块以及形成于该绝缘层上且电性连接该导电凸块的线路结构,避免使用已知封装基板的板体,以降低该电子封装件的整体厚度,满足轻薄化的需求。

The present invention discloses an electronic package and a method for manufacturing the same. The electronic package includes an insulating layer, electronic components and conductive bumps embedded in the insulation, and a circuit structure formed on the insulating layer and electrically connected to the conductive bumps. The board body of the known packaging substrate is avoided to reduce the overall thickness of the electronic package and meet the demand for thinness and lightness.

Description

电子封装件及其制法Electronic package and its manufacturing method

技术领域technical field

本发明涉及一种半导体封装技术,尤其涉及一种电子封装件及其制法。The invention relates to a semiconductor package technology, in particular to an electronic package and a manufacturing method thereof.

背景技术Background technique

随着半导体封装技术的演进,半导体装置(Semiconductor device)已开发出不同的封装型态,另为提升电性功能及节省封装空间,遂开发出覆晶(flip chip)技术。With the evolution of semiconductor packaging technology, different packaging types have been developed for semiconductor devices, and flip chip technology has been developed to improve electrical functions and save packaging space.

图1为已知半导体封装件1的剖面示意图。如图1所示,该半导体封装件1的制法先提供一具有板体10a与线路结构10b的封装基板10,再通过覆晶方式结合一半导体元件11于该线路结构10b上,之后形成封装胶体13于该封装基板10上以包覆该半导体元件11。FIG. 1 is a schematic cross-sectional view of a known semiconductor package 1 . As shown in FIG. 1, the manufacturing method of the semiconductor package 1 firstly provides a package substrate 10 having a board body 10a and a circuit structure 10b, and then combines a semiconductor element 11 on the circuit structure 10b by a flip-chip method, and then forms a package. The glue 13 is on the packaging substrate 10 to cover the semiconductor device 11 .

具体地,该半导体元件11具有相对的作用面11a与非作用面11b,该作用面11a具有多个电极垫110,以通过多个如焊锡凸块12电性连接该电极垫110与该线路结构10b的线路层100,且该封装胶体13还形成于该半导体元件11与该封装基板10之间,以包覆上述焊锡凸块12。Specifically, the semiconductor element 11 has an opposite active surface 11a and a non-active surface 11b, the active surface 11a has a plurality of electrode pads 110, so as to electrically connect the electrode pads 110 and the circuit structure through a plurality of solder bumps 12 10b, and the encapsulant 13 is also formed between the semiconductor element 11 and the package substrate 10 to cover the above-mentioned solder bumps 12 .

然而,已知半导体封装件1的制程中,当该半导体元件11为大尺寸或高接脚数(high pin count)时,该封装胶体13的流动不易填满该半导体元件11与该封装基板10之间的空间,致使于该半导体元件11与该封装基板10之间产生空洞(void)14,故于后续固化该封装胶体13的过程中,该空洞14容易发生爆米花效应(popcorn effect),导致产品良率下降。However, in the known manufacturing process of the semiconductor package 1, when the semiconductor element 11 is of large size or high pin count (high pin count), the flow of the encapsulant 13 is not easy to fill the semiconductor element 11 and the packaging substrate 10 The space between the semiconductor elements 11 and the package substrate 10 creates a void 14, so in the subsequent curing process of the encapsulant 13, the void 14 is prone to popcorn effect, lead to a decline in product yield.

此外,已知半导体封装件1中,由于该封装基板10具有板体10a,致使该半导体封装件1的整体厚度难以有效减少,无法满足现今电子产品轻薄化的需求。In addition, in the known semiconductor package 1 , since the package substrate 10 has a plate body 10 a, it is difficult to effectively reduce the overall thickness of the semiconductor package 1 , which cannot meet the demand for thinner and lighter electronic products today.

因此,如何克服现有技术的缺陷,实为目前各界亟欲解决的技术问题。Therefore, how to overcome the defect of the prior art is actually a technical problem that all walks of life desire to solve urgently.

发明内容Contents of the invention

鉴于上述现有技术的缺陷,本发明提供一种电子封装件及其制法,以降低该电子封装件的整体厚度,满足轻薄化的需求。In view of the above-mentioned defects in the prior art, the present invention provides an electronic package and a manufacturing method thereof, so as to reduce the overall thickness of the electronic package and meet the demand for thinner and lighter.

本发明的电子封装件包括:绝缘层;结合有多个导电凸块的电子元件,其嵌埋于该绝缘层中,且令该导电凸块的部分表面外露于该绝缘层;以及线路结构,其形成于该绝缘层及该导电凸块外露于该绝缘层的部分表面上且电性连接该导电凸块。The electronic package of the present invention includes: an insulating layer; an electronic component combined with a plurality of conductive bumps embedded in the insulating layer, and part of the surface of the conductive bumps is exposed to the insulating layer; and a circuit structure, It is formed on the insulating layer and the conductive bump is exposed on a part of the surface of the insulating layer and is electrically connected to the conductive bump.

本发明还提供一种电子封装件的制法,其包括以下步骤:设置一结合有多个导电凸块的电子元件于一承载件上;形成绝缘层于该承载件上,以令该绝缘层包覆该电子元件,且令该导电凸块的部分表面外露于该绝缘层;形成线路结构于该绝缘层及该导电凸块外露于该绝缘层的部分表面上,且令该线路结构电性连接该导电凸块;以及移除该承载件。The present invention also provides a method for manufacturing an electronic package, which includes the following steps: setting an electronic component combined with a plurality of conductive bumps on a carrier; forming an insulating layer on the carrier, so that the insulating layer Covering the electronic component, and exposing part of the surface of the conductive bump to the insulating layer; forming a circuit structure on the insulating layer and the part of the surface of the conductive bump exposed on the insulating layer, and making the circuit structure electrically connecting the conductive bump; and removing the carrier.

前述的电子封装件及其制法中,该电子元件具有相对的作用面与非作用面,且该作用面结合至所述导电凸块,而使该电子元件电性连接该导电凸块。例如,于移除该承载件之后,该电子元件的非作用面外露于该绝缘层;或者,该电子元件的非作用面上结合散热件。In the aforementioned electronic package and its manufacturing method, the electronic component has an opposite active surface and a non-active surface, and the active surface is combined with the conductive bump so that the electronic component is electrically connected to the conductive bump. For example, after the carrier is removed, the non-active surface of the electronic component is exposed to the insulating layer; or, the non-active surface of the electronic component is combined with a heat sink.

前述的电子封装件及其制法中,于移除该承载件之后,该电子元件外露于该绝缘层。In the aforementioned electronic package and its manufacturing method, after the carrier is removed, the electronic component is exposed on the insulating layer.

前述的电子封装件及其制法中,该导电凸块为焊锡凸块。In the aforementioned electronic package and its manufacturing method, the conductive bumps are solder bumps.

前述的电子封装件及其制法中,还包括形成多个导电元件于该线路结构上。The aforementioned electronic package and its manufacturing method also include forming a plurality of conductive elements on the circuit structure.

另外,前述的电子封装件及其制法中,还包括形成多个导电柱于该绝缘层中,且该导电柱电性连接该线路结构。例如,于移除该承载件之后,该导电柱的端面外露于该绝缘层。进一步地,还包括接置电子装置于该导电柱的端面上。In addition, the aforementioned electronic package and its manufacturing method also include forming a plurality of conductive pillars in the insulating layer, and the conductive pillars are electrically connected to the circuit structure. For example, after the carrier is removed, the end surfaces of the conductive pillars are exposed to the insulating layer. Further, it also includes connecting an electronic device on the end surface of the conductive column.

由上可知,本发明的电子封装件及其制法具有以下优点和有益效果:本发明的电子封装件及其制法主要通过先以该绝缘层包覆该电子元件与该导电凸块,再于该绝缘层上形成该线路结构,故该绝缘层无需流过该电子元件与该线路结构之间,因而该电子元件与该线路结构之间不会产生空洞,故相较于现有技术,本发明能有效提升产品良率。It can be seen from the above that the electronic package and its manufacturing method of the present invention have the following advantages and beneficial effects: the electronic packaging of the present invention and its manufacturing method mainly cover the electronic component and the conductive bump with the insulating layer, and then The wiring structure is formed on the insulating layer, so the insulating layer does not need to flow between the electronic component and the wiring structure, so there will be no void between the electronic component and the wiring structure, so compared with the prior art, The invention can effectively improve product yield.

此外,本发明的电子封装件仅形成线路结构,而无需使用已知封装基板的板体,故相较于现有技术,该电子封装件的整体厚度能大幅减少,以满足轻薄化的需求。In addition, the electronic package of the present invention only forms a circuit structure without using a known package substrate. Therefore, compared with the prior art, the overall thickness of the electronic package can be greatly reduced to meet the demand for light and thin.

附图说明Description of drawings

图1为已知半导体封装件的剖面示意图;以及FIG. 1 is a schematic cross-sectional view of a known semiconductor package; and

图2A至图2E为本发明的电子封装件的第一实施例的制法的剖面示意图;其中,图2E’及图2E”为图2E的不同实施例;以及2A to 2E are schematic cross-sectional views of the manufacturing method of the first embodiment of the electronic package of the present invention; wherein, FIG. 2E' and FIG. 2E" are different embodiments of FIG. 2E; and

图3A至图3C为本发明的电子封装件的第二实施例的制法的剖面示意图;其中,图3C’为图3C的另一实施例。3A to 3C are schematic cross-sectional views of the manufacturing method of the second embodiment of the electronic package of the present invention; wherein, FIG. 3C' is another embodiment of FIG. 3C.

附图标记说明Explanation of reference signs

1 半导体封装件1 Semiconductor package

10 封装基板10 Package Substrate

10a 板体10a board body

10b,24,24’ 线路结构10b,24,24’ line structure

100,240 线路层100,240 line layer

11 半导体元件11 Semiconductor components

11a,21a 作用面11a, 21a Action surface

11b,21b 非作用面11b, 21b non-active surface

110,210 电极垫110,210 electrode pads

12 焊锡凸块12 Solder bumps

13 封装胶体13 Encapsulation colloid

14 空洞14 hollow

2,3 电子封装件2,3 Electronic packages

20 承载件20 Carriers

200 金属层200 metal layers

21 电子元件21 electronic components

22 导电凸块22 Conductive bumps

22a 顶表面22a top surface

23 绝缘层23 insulation layer

23a 第一表面23a first surface

23b 第二表面23b Second surface

241 导电体241 Conductor

242 介电层242 dielectric layer

25 导电元件25 Conductive elements

26,26’ 散热件26,26’ radiator

30 导电柱30 conductive pillars

30a,30b 端面30a, 30b end faces

31 电子装置31 Electronics

32 连接凸块。32 Connection bumps.

具体实施方式Detailed ways

以下通过特定的具体实施例说明本发明的实施方式,本领域技术人员可由本说明书所公开的内容轻易地了解本发明的其他优点及功效。Embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification.

须知,本说明书所附图式所绘示的结构、比例、大小等,均仅用以配合说明书所公开的内容,以供本领域技术人员了解与阅读,并非用以限定本发明可实施的限定条件,故不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的情况下,均应仍落在本发明所公开的技术内容得能涵盖的范围内。同时,本说明书中所引用的如“上”、“第一”、“第二”及“一”等的用语,亦仅为便于叙述的明了,而非用以限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容的情况下,当亦视为本发明可实施的范畴。It should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this specification are only used to match the content disclosed in the specification, for those skilled in the art to understand and read, and are not used to limit the implementation of the present invention. Conditions, so it has no technical substantive meaning, any modification of structure, change of proportional relationship or adjustment of size shall still fall within the scope of the present invention without affecting the effect and purpose of the present invention. The disclosed technical content must be within the scope covered. At the same time, terms such as "above", "first", "second" and "one" quoted in this specification are only for the convenience of description and are not used to limit the scope of the present invention. The change or adjustment of the relative relationship shall also be regarded as the implementable scope of the present invention if there is no substantial change in the technical content.

图2A至图2E为本发明的电子封装件2的第一实施例的制法的剖面示意图。2A to 2E are schematic cross-sectional views of the manufacturing method of the first embodiment of the electronic package 2 of the present invention.

如图2A所示,设置一结合有多个导电凸块22的电子元件21于一承载件20上。As shown in FIG. 2A , an electronic component 21 combined with a plurality of conductive bumps 22 is disposed on a carrier 20 .

于本实施例中,该承载件20的表面形成有一金属层200。于本实施例中,该承载件20为基材,例如铜箔基板或其它板体,但无特别限制,本实施例以铜箔基板作说明,其两侧具有金属层200。In this embodiment, a metal layer 200 is formed on the surface of the carrier 20 . In this embodiment, the carrier 20 is a substrate, such as a copper foil substrate or other boards, but there is no particular limitation. In this embodiment, a copper foil substrate is used for illustration, with metal layers 200 on both sides thereof.

此外,该电子元件21为半导体元件为主动元件、被动元件或其二者组合,且该主动元件为例如半导体晶片,而该被动元件为例如电阻、电容及电感。例如,该电子元件21为半导体晶片,其具有相对的作用面21a与非作用面21b,该作用面21a具有多个电极垫210以结合上述导电凸块22,而使该导电凸块22电性连接该电子元件21,且该电子元件21以其非作用面21b通过结合层(图略)黏固至该金属层200上。In addition, the electronic component 21 is a semiconductor component, which is an active component, a passive component or a combination thereof, and the active component is, for example, a semiconductor chip, and the passive component is, for example, a resistor, a capacitor, and an inductor. For example, the electronic component 21 is a semiconductor wafer, which has an opposite active surface 21a and a non-active surface 21b. The active surface 21a has a plurality of electrode pads 210 to combine the above-mentioned conductive bumps 22, so that the conductive bumps 22 are electrically conductive. The electronic component 21 is connected, and the electronic component 21 is adhered to the metal layer 200 with its non-active surface 21b through a bonding layer (not shown).

又,该导电凸块22为焊锡凸块。Also, the conductive bumps 22 are solder bumps.

如图2B所示,形成一绝缘层23于该承载件20的金属层200上,以令该绝缘层23包覆该电子元件21与上述导电凸块22。As shown in FIG. 2B , an insulating layer 23 is formed on the metal layer 200 of the carrier 20 so that the insulating layer 23 covers the electronic component 21 and the conductive bump 22 .

于本实施例中,该绝缘层23定义有相对的第一表面23a与第二表面23b,以令该第二表面结合至该承载件20的金属层200上。In this embodiment, the insulating layer 23 defines a first surface 23 a and a second surface 23 b opposite to each other, so that the second surface is bonded to the metal layer 200 of the carrier 20 .

此外,该绝缘层23为环氧树脂(epoxy)的封装胶体,其可用压合(lamination)或模压(molding)的方式形成于该承载件20上。In addition, the insulating layer 23 is an epoxy encapsulant, which can be formed on the carrier 20 by lamination or molding.

又,该导电凸块22的顶表面22a外露于该绝缘层23。例如,可通过整平制程,令该导电凸块22的顶表面22a齐平该绝缘层23的第一表面23a。具体地,该整平制程可通过研磨方式,移除该导电凸块22的部分材质与该绝缘层23的部分材质。Moreover, the top surface 22 a of the conductive bump 22 is exposed from the insulating layer 23 . For example, the top surface 22 a of the conductive bump 22 can be flush with the first surface 23 a of the insulating layer 23 through a leveling process. Specifically, the leveling process can remove part of the material of the conductive bump 22 and part of the material of the insulating layer 23 by grinding.

如图2C至图2D所示,形成一线路结构24于该绝缘层23及该导电凸块22的顶表面22a上,且该线路结构24电性连接上述导电凸块22。As shown in FIGS. 2C to 2D , a circuit structure 24 is formed on the insulating layer 23 and the top surface 22 a of the conductive bump 22 , and the circuit structure 24 is electrically connected to the conductive bump 22 .

于本实施例中,该线路结构24包括一设于该绝缘层23与该导电凸块22上的线路层240、设于该线路层240上的多个导电体241及一包覆该线路层240与上述导电体241的介电层242,且该线路层240电性连接上述导电凸块22,并令上述导电体241的部分表面外露于该介电层242。In this embodiment, the circuit structure 24 includes a circuit layer 240 disposed on the insulating layer 23 and the conductive bump 22, a plurality of conductors 241 disposed on the circuit layer 240, and a circuit layer covering the circuit layer. 240 and the dielectric layer 242 of the conductor 241 , and the circuit layer 240 is electrically connected to the conductive bump 22 , and exposes part of the surface of the conductor 241 to the dielectric layer 242 .

此外,形成该线路层240的材质为铜,且该导电体241为铜柱体。In addition, the circuit layer 240 is made of copper, and the conductor 241 is a copper cylinder.

又,该介电层242以铸模方式、涂布方式或压合方式形成于该绝缘层23上,且形成该介电层242的材质为铸模化合物(Molding Compound)、底层涂料(Primer)或如环氧树脂(Epoxy)的介电材料。Moreover, the dielectric layer 242 is formed on the insulating layer 23 by molding, coating or pressing, and the material for forming the dielectric layer 242 is molding compound (Molding Compound), primer (Primer) or such as Dielectric material of epoxy resin (Epoxy).

如图2E所示,移除该承载件20及其金属层200,以令该电子元件21外露于该绝缘层23,以完成本发明的电子封装件2。As shown in FIG. 2E , the carrier 20 and its metal layer 200 are removed so that the electronic component 21 is exposed on the insulating layer 23 to complete the electronic package 2 of the present invention.

于本实施例中,该电子元件21的非作用面21b外露于该绝缘层23的第二表面23b,且可形成多个如焊球的导电元件25于该线路结构24的导电体241上,以供后续接置如电路板、封装结构或其它结构(如另一晶片)的电子装置(图略)。In this embodiment, the non-active surface 21b of the electronic element 21 is exposed on the second surface 23b of the insulating layer 23, and a plurality of conductive elements 25 such as solder balls can be formed on the conductor 241 of the circuit structure 24, For subsequent placement of electronic devices such as circuit boards, packaging structures or other structures (such as another chip) (not shown).

此外,如图2E’所示,形成于绝缘层23上的线路结构24’也可具有多个线路层240与多个介电层242。In addition, as shown in FIG. 2E', the circuit structure 24' formed on the insulating layer 23 may also have a plurality of circuit layers 240 and a plurality of dielectric layers 242.

又,如图2E”所示,还可于该电子元件21的非作用面21b与该绝缘层23的第二表面23b上结合一散热件26。于一实施例中,如在本发明图2A所使用的承载件可为金属板,而于制程中仅移除部分该承载件,保留对应该电子元件21的非作用面21b处的承载件,以作为该散热件26。本发明的电子封装件2的制法通过先以该绝缘层23包覆该电子元件21与该导电凸块22,再于该绝缘层23上形成该线路结构24,故该绝缘层23无需流过该电子元件21与该线路结构24之间。因此,当该电子元件21为大尺寸或高接脚数时,该电子元件21与该线路结构24之间不会产生空洞,因而能避免渗入水气的问题,更不会发生爆米花效应,故能有效提升产品良率。Also, as shown in FIG. 2E ", a heat sink 26 can also be combined on the non-active surface 21b of the electronic component 21 and the second surface 23b of the insulating layer 23. In one embodiment, as shown in FIG. 2A of the present invention The carrier used can be a metal plate, and only part of the carrier is removed during the manufacturing process, and the carrier corresponding to the non-active surface 21b of the electronic component 21 is reserved as the heat sink 26. The electronic package of the present invention The manufacturing method of component 2 is to cover the electronic component 21 and the conductive bump 22 with the insulating layer 23 first, and then form the circuit structure 24 on the insulating layer 23, so the insulating layer 23 does not need to flow through the electronic component 21 and the circuit structure 24. Therefore, when the electronic component 21 is large in size or has a high pin count, there will be no void between the electronic component 21 and the circuit structure 24, thereby avoiding the problem of moisture infiltration, There will be no popcorn effect, so it can effectively improve product yield.

此外,本发明的电子封装件2仅形成线路结构24,而无需制作已知封装基板的板体,故相较于现有技术,该电子封装件2的整体厚度能大幅减少,以满足轻薄化的需求。In addition, the electronic package 2 of the present invention only forms the circuit structure 24 without making a known package substrate board, so compared with the prior art, the overall thickness of the electronic package 2 can be greatly reduced to meet the light and thin requirements. demand.

图3A至图3C为本发明的电子封装件3的第二实施例的制法的剖面示意图。本实施例与第一实施例的差异在于新增导电柱,其它制程大致相同,故以下仅说明相异处,而不再赘述相同处。3A to 3C are schematic cross-sectional views of the manufacturing method of the second embodiment of the electronic package 3 of the present invention. The difference between this embodiment and the first embodiment lies in the addition of conductive pillars, and other manufacturing processes are substantially the same, so only the differences will be described below, and the similarities will not be repeated.

如图3A所示,设置多个导电柱30与一结合有多个导电凸块22的电子元件21于一承载件20上。As shown in FIG. 3A , a plurality of conductive pillars 30 and an electronic component 21 combined with a plurality of conductive bumps 22 are disposed on a carrier 20 .

于本实施例中,该导电柱30为铜柱。In this embodiment, the conductive pillar 30 is a copper pillar.

如图3B所示,进行如图2B至图2D的制程,以令上述导电柱30形成于该绝缘层23中,且该导电柱30电性连接该线路结构24的线路层240。As shown in FIG. 3B , the process of FIG. 2B to FIG. 2D is performed to form the above-mentioned conductive pillar 30 in the insulating layer 23 , and the conductive pillar 30 is electrically connected to the circuit layer 240 of the circuit structure 24 .

于本实施例中,于进行如图2B的整平制程时,可移除该导电柱30的部分材质,使该导电柱30的其中一端面30a齐平该绝缘层23的第一表面23a。In this embodiment, when performing the leveling process as shown in FIG. 2B , part of the material of the conductive pillar 30 can be removed, so that one end surface 30 a of the conductive pillar 30 is flush with the first surface 23 a of the insulating layer 23 .

此外,于移除该承载件20之后,该导电柱30的另一端面30b外露于该绝缘层23的第二表面23b。In addition, after the carrier 20 is removed, the other end surface 30 b of the conductive column 30 is exposed on the second surface 23 b of the insulating layer 23 .

又,如图3C所示,可形成多个如焊球的导电元件25于该线路结构24的导电体241上,以供后续接置如电路板、封装结构或其它结构(如另一晶片)的电子装置(图略)。Also, as shown in FIG. 3C, a plurality of conductive elements 25 such as solder balls can be formed on the conductor 241 of the circuit structure 24 for subsequent placement such as circuit boards, packaging structures or other structures (such as another chip) electronic devices (not shown).

另外,于后续制程中,如图3C所示,可通过连接凸块32接置一电子装置31于各该导电柱30的端面30b上,使该电子装置31电性连接各该导电柱30。例如,该电子装置31为封装件、主动元件或被动元件。In addition, in the subsequent process, as shown in FIG. 3C , an electronic device 31 can be connected to the end surface 30 b of each conductive pillar 30 through the connection bump 32 , so that the electronic device 31 is electrically connected to each conductive pillar 30 . For example, the electronic device 31 is a package, an active component or a passive component.

应可理解地,如图3C’所示,也可于该电子元件21的非作用面21b上结合一散热件26’。于一实施例中,该散热件26’可为保留对应该电子元件21的非作用面21b处的承载件(例如为金属板)。It should be understood that, as shown in FIG. 3C', a heat sink 26' may also be combined on the non-active surface 21b of the electronic component 21. In one embodiment, the heat sink 26' can be a bearing (for example, a metal plate) that remains at the non-active surface 21b corresponding to the electronic component 21.

本发明提供一种电子封装件2,3,其包括:一绝缘层23、具有多个导电凸块22的电子元件21以及一线路结构24。The present invention provides an electronic package 2 , 3 , which includes: an insulating layer 23 , an electronic component 21 having a plurality of conductive bumps 22 and a circuit structure 24 .

所述的绝缘层23具有相对的第一表面23a与第二表面23b。The insulating layer 23 has a first surface 23a and a second surface 23b opposite to each other.

所述的电子元件21与导电凸块22嵌埋于该绝缘层23中,以令该导电凸块22的部分表面(顶表面22a)外露于该绝缘层23的第一表面23a。The electronic components 21 and the conductive bumps 22 are embedded in the insulating layer 23 , so that part of the surface (top surface 22 a ) of the conductive bumps 22 is exposed on the first surface 23 a of the insulating layer 23 .

所述的线路结构24形成于该绝缘层23的第一表面23a上且电性连接该导电凸块22。The circuit structure 24 is formed on the first surface 23 a of the insulating layer 23 and is electrically connected to the conductive bump 22 .

于一实施例中,该电子元件21具有相对的作用面21a与非作用面21b,且该作用面21a结合上述导电凸块22。In one embodiment, the electronic component 21 has an opposite active surface 21 a and a non-active surface 21 b, and the active surface 21 a is combined with the above-mentioned conductive bump 22 .

于一实施例中,该电子元件21的非作用面21b上结合一散热件26,26’。In one embodiment, a heat sink 26, 26' is combined on the non-active surface 21b of the electronic component 21.

于一实施例中,该电子元件21外露于该绝缘层23。例如,该电子元件21的非作用面21b外露于该绝缘层23的第二表面23b。In one embodiment, the electronic component 21 is exposed on the insulating layer 23 . For example, the non-active surface 21 b of the electronic component 21 is exposed on the second surface 23 b of the insulating layer 23 .

于一实施例中,该导电凸块22为焊锡凸块。In one embodiment, the conductive bump 22 is a solder bump.

于一实施例中,所述的电子封装件2,3还包括形成于该线路结构24上的多个导电元件25。In one embodiment, the electronic package 2 , 3 further includes a plurality of conductive elements 25 formed on the circuit structure 24 .

于一实施例中,所述的电子封装件3还包括形成于该绝缘层23中的多个导电柱30,且该导电柱30电性连接该线路结构24。In one embodiment, the electronic package 3 further includes a plurality of conductive pillars 30 formed in the insulating layer 23 , and the conductive pillars 30 are electrically connected to the circuit structure 24 .

于一实施例中,该导电柱30的端面30b外露于该绝缘层23的第二表面23b。In one embodiment, the end surface 30 b of the conductive pillar 30 is exposed on the second surface 23 b of the insulating layer 23 .

于一实施例中,所述的电子封装件3还包括一接置于该导电柱30的端面30b上的电子装置31。In one embodiment, the electronic package 3 further includes an electronic device 31 connected to the end surface 30 b of the conductive pillar 30 .

综上所述,本发明的电子封装件及其制法,通过先以该绝缘层包覆该电子元件与该导电凸块,再于该绝缘层上形成该线路结构,故该电子元件与该线路结构之间不会产生空洞,因而能有效提升产品良率。To sum up, the electronic package and its manufacturing method of the present invention cover the electronic component and the conductive bump with the insulating layer first, and then form the circuit structure on the insulating layer, so the electronic component and the There will be no voids between the circuit structures, so the product yield can be effectively improved.

此外,本发明的电子封装件仅形成线路结构,而无需制作已知封装基板的板体,故该电子封装件的整体厚度能大幅减少,以满足轻薄化的需求。In addition, the electronic package of the present invention only forms a circuit structure without making a board body of a known package substrate, so the overall thickness of the electronic package can be greatly reduced to meet the demand for lightness and thinning.

上述实施例仅用以例示性说明本发明的原理及其功效,而非用于限制本发明。本领域技术人员均可在不违背本发明的精神及范畴下,对上述实施例进行修改。因此本发明的权利保护范围,应如权利要求书所列。The above-mentioned embodiments are only used to illustrate the principles and effects of the present invention, but not to limit the present invention. Those skilled in the art can modify the above embodiments without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention should be listed in the claims.

Claims (10)

1.一种电子封装件,其特征为,该电子封装件包括:1. An electronic package, characterized in that the electronic package comprises: 绝缘层;Insulation; 结合有多个导电凸块的电子元件,其嵌埋于该绝缘层中,且令该导电凸块的部分表面外露于该绝缘层;以及An electronic component combined with a plurality of conductive bumps embedded in the insulating layer, with part of the surface of the conductive bumps exposed to the insulating layer; and 线路结构,其形成于该绝缘层及该导电凸块外露于该绝缘层的部分表面上且电性连接该导电凸块。The circuit structure is formed on the insulating layer and the conductive bump is exposed on a part of the surface of the insulating layer and is electrically connected to the conductive bump. 2.如权利要求1所述的电子封装件,其特征为,该电子元件具有相对的作用面与非作用面,且该作用面结合至所述导电凸块,而使该电子元件电性连接该导电凸块。2. The electronic package as claimed in claim 1, wherein the electronic component has an opposite active surface and a non-active surface, and the active surface is combined with the conductive bump to electrically connect the electronic component the conductive bumps. 3.如权利要求1所述的电子封装件,其特征为,该导电凸块为焊锡凸块。3. The electronic package as claimed in claim 1, wherein the conductive bump is a solder bump. 4.如权利要求1所述的电子封装件,其特征为,该电子封装件还包括形成于该绝缘层中的多个导电柱,且该导电柱电性连接该线路结构。4. The electronic package as claimed in claim 1, further comprising a plurality of conductive pillars formed in the insulating layer, and the conductive pillars are electrically connected to the circuit structure. 5.如权利要求4所述的电子封装件,其特征为,该电子封装件还包括接置于该导电柱的端面上的电子装置。5. The electronic package as claimed in claim 4, further comprising an electronic device connected to the end surface of the conductive post. 6.一种电子封装件的制法,其特征为,该制法包括以下步骤:6. A method for preparing an electronic package, characterized in that the method comprises the following steps: 设置一结合有多个导电凸块的电子元件于一承载件上;disposing an electronic component combined with a plurality of conductive bumps on a carrier; 形成绝缘层于该承载件上,以令该绝缘层包覆该电子元件,且令该导电凸块的部分表面外露于该绝缘层;forming an insulating layer on the carrier, so that the insulating layer covers the electronic component, and a part of the surface of the conductive bump is exposed to the insulating layer; 形成线路结构于该绝缘层及该导电凸块外露于该绝缘层的部分表面上,且令该线路结构电性连接该导电凸块;以及forming a wiring structure on the insulating layer and the conductive bump exposed on a part of the surface of the insulating layer, and electrically connecting the wiring structure to the conductive bump; and 移除该承载件。Remove the carrier. 7.如权利要求6所述的电子封装件的制法,其特征为,该电子元件具有相对的作用面与非作用面,且该作用面结合至所述导电凸块,而使该电子元件电性连接该导电凸块。7. The method of manufacturing an electronic package as claimed in claim 6, wherein the electronic component has an opposite active surface and a non-active surface, and the active surface is combined with the conductive bump, so that the electronic component Electrically connect the conductive bump. 8.如权利要求6所述的电子封装件的制法,其特征为,该导电凸块为焊锡凸块。8. The method for manufacturing an electronic package as claimed in claim 6, wherein the conductive bumps are solder bumps. 9.如权利要求6所述的电子封装件的制法,其特征为,该制法还包括形成多个导电元件于该线路结构上。9. The method for manufacturing an electronic package as claimed in claim 6, further comprising forming a plurality of conductive elements on the circuit structure. 10.如权利要求9所述的电子封装件的制法,其特征为,该制法还包括接置电子装置于该导电柱的端面上。10 . The method for manufacturing an electronic package as claimed in claim 9 , further comprising connecting an electronic device on the end surface of the conductive post. 11 .
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CN104538375A (en) * 2014-12-30 2015-04-22 华天科技(西安)有限公司 Fan-out PoP packaging structure and manufacturing method thereof
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