CN107768142A - Thin film capacitor for lifting dielectric constant and preparation method thereof - Google Patents
Thin film capacitor for lifting dielectric constant and preparation method thereof Download PDFInfo
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- CN107768142A CN107768142A CN201610692995.1A CN201610692995A CN107768142A CN 107768142 A CN107768142 A CN 107768142A CN 201610692995 A CN201610692995 A CN 201610692995A CN 107768142 A CN107768142 A CN 107768142A
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- 239000003990 capacitor Substances 0.000 title claims abstract description 58
- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 146
- 239000002184 metal Substances 0.000 claims abstract description 146
- 230000004888 barrier function Effects 0.000 claims abstract description 141
- 238000003754 machining Methods 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000012774 insulation material Substances 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims description 27
- 238000000576 coating method Methods 0.000 claims description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 24
- 229910021389 graphene Inorganic materials 0.000 claims description 12
- 239000013528 metallic particle Substances 0.000 claims description 11
- 239000002041 carbon nanotube Substances 0.000 claims description 9
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 9
- 239000000084 colloidal system Substances 0.000 claims description 9
- 238000012856 packing Methods 0.000 claims description 8
- 230000005540 biological transmission Effects 0.000 claims description 5
- 239000002114 nanocomposite Substances 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 1
- 229910010293 ceramic material Inorganic materials 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- 239000002861 polymer material Substances 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 241000209094 Oryza Species 0.000 description 3
- 235000007164 Oryza sativa Nutrition 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 229920002521 macromolecule Polymers 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 235000009566 rice Nutrition 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
The present invention discloses a kind of for lifting thin film capacitor of dielectric constant and preparation method thereof.The preparation method of thin film capacitor includes：First, a bearing substrate is placed on a machine table, wherein machine table has multiple machining areas along a plane formula production line sequential；Then, alternately multiple metal levels and multiple insulating barrier of the storehouse on bearing substrate are formed, to complete the making of a multilayer stack structure；Then, two end-electrode structures are formed, are tossed about end with being respectively coated by the two-phase of multilayer stack structure.The present invention passes through the processing of machine table so that multiple metal levels and multiple insulating barriers can alternately storehouse be on bearing substrate, whereby to complete the making of the multilayer stack structure of thin film capacitor.Each insulating barrier includes an insulation material layer and multiple Nanometer materials being mixed into insulation material layer, whereby to increase the dielectric constant of multilayer stack structure.
Description
Technical field
The present invention relates to a kind of thin film capacitor and preparation method thereof, is used to lift dielectric constant more particularly to a kind of
Thin film capacitor and preparation method thereof.
Background technology
Capacitor has been widely used for consumer electrical home appliances, computer motherboard and its periphery, power supply unit, led to
The basic module of product and automobile etc. is interrogated, its main effect includes：Filtering, bypass, rectification, coupling, decoupling, phase inversion etc..It is
One of indispensable component in electronic product.Capacitor has different kenels according to different material and purposes.Including aluminum
Electrochemical capacitor, tantalum matter electrochemical capacitor, laminated ceramic electric capacity, thin-film capacitor etc..Thin film capacitor produced by prior art
Overall structure is excessively complicated and needs to improve, and the dielectric constant that the thin film capacitor produced by prior art can be provided
It is too low and need to improve.
The content of the invention
The technical problems to be solved by the invention are, provide in view of the shortcomings of the prior art a kind of normal for lifting dielectric
Several thin film capacitor and preparation method thereof.
In order to solve above-mentioned technical problem, a wherein technical scheme of the present invention is to provide a kind of for carrying
The preparation method for rising the thin film capacitor of dielectric constant, it includes：First, a bearing substrate is placed on a machine table,
Wherein, the machine table has multiple machining areas along a plane formula production line sequential, and the machine table
Include a metal level processing module and an insulating barrier processing module in each described machining area；Then, by positioned at the 1st
The metal level processing module in the individual machining area, to be coated with one the 1st metal level on the bearing substrate；So
Afterwards, by the insulating barrier processing module in the 1st machining area, to be coated with one the 1st insulating barrier in described
The 1st metal level is covered on bearing substrate；Next, n times repeat step is sequentially performed, to complete a multilayer stack
The making of structure；Finally, two end-electrode structures are formed, are tossed about end with being respectively coated by the two-phase of the multilayer stack structure
Portion.For further, repeated described in n times the order of step for the 1st, 2,3 ..., n times, and each described repeat step bag
Include：First, by the metal level processing module in the N+1 machining areas, to be coated with the N+1 metal
Layer is in covering the n-th metal level on insulating barrier described in n-th；Then, by the N+1 machining areas
The insulating barrier processing module, be coated with the N+1 insulating barrier in described in n-th on insulating barrier and covering the N+1 institute
State metal level.Wherein, each described insulating barrier includes an insulation material layer and multiple is mixed into the insulation material layer
Nanometer material, to increase the dielectric constant of the multilayer stack structure.
Further, each described metal level processing module includes metal level coating module and one first baking
Module, and each described insulating barrier processing module includes insulating barrier coating module and one second baking module.
Further, by the metal level processing module in the 1st machining area, to be coated with
1 metal level still further comprises in the step on the bearing substrate：First, by positioned at the 1st processing
Metal level coating module in region, to be coated with the 1st metal level on the bearing substrate；Then, position is passed through
First baking module in the 1st machining area, to toast the 1st metal level.
Further, by the insulating barrier processing module in the 1st machining area, to be coated with
1 insulating barrier still further comprises in the step of covering the 1st metal level on the bearing substrate：First,
Module is coated with by the insulating barrier in the 1st machining area, held with being coated with the 1st insulating barrier in described
The 1st metal level is covered on carried base board；Then, second baking in the 1st machining area is passed through
Module, to toast the 1st insulating barrier.
Further, by the metal level processing module in N+1 machining areas, with coating
The N+1 metal levels also further wrap in the step of covering the n-th metal level on insulating barrier described in n-th
Include：First, module is coated with by the metal level in the N+1 machining areas, to be coated with the N+1 gold
Category layer is in covering the n-th metal level on insulating barrier described in n-th；Then, by positioned at the N+1 machining areas
Interior first baking module, to toast the N+1 metal levels.
Further, by the insulating barrier processing module in N+1 machining areas, with coating
The N+1 insulating barriers are also further in the step of covering the N+1 metal levels on insulating barrier described in n-th
Including：First, module is coated with by the insulating barrier in the N+1 machining areas, it is described to be coated with N+1
Insulating barrier is in covering the N+1 metal level on insulating barrier described in n-th；Then, by positioned at the N+1 processing
Second baking module in region, to toast the N+1 insulating barriers.
In order to solve above-mentioned technical problem, an other technical scheme of the present invention is to provide a kind of for carrying
The preparation method for rising the thin film capacitor of dielectric constant, it includes：First, a bearing substrate is placed on a machine table,
Wherein, the machine table has an at least machining area, includes edge at least one machining area of the machine table
A metal level processing module and an insulating barrier processing module for one plane formula production line sequential；Then, by least
The metal level processing module of the machine table in one machining area, to form multiple metal levels, and by
The insulating barrier processing module of the machine table at least one machining area, to form multiple insulating barriers, wherein
Alternately storehouse is on the bearing substrate for multiple metal levels and multiple insulating barriers, to complete a multilayer stack
The making of structure；Then, two end-electrode structures are formed, are tossed about end with being respectively coated by the two-phase of the multilayer stack structure
Portion.Wherein, each described insulating barrier includes an insulation material layer and multiple nm materials being mixed into the insulation material layer
Material, to increase the dielectric constant of the multilayer stack structure.
Further, the machine table includes one and is used to point-blank drive the bearing substrate by least described in one
The transmission mechanism of machining area, and a room temperature environment is provided at least one machining area, wherein, the metal level processing mould
Block includes metal level coating module and first baking for toasting the metal level for being used to form the metal level
Module, and the insulating barrier processing module includes an insulating barrier coating module and one for being used to form the insulating barrier for drying
The second baking module of the insulating barrier is baked, wherein, each described end-electrode structure includes one and is used to coat the multiple field
First clad of the side end of stack architecture, one are used for the second clad for coating first clad and a use
In the 3rd clad for coating second clad, wherein, the plane formula production line is a flat annular line.
In order to solve above-mentioned technical problem, yet another aspect in addition of the present invention is to provide one kind and is used for
The thin film capacitor of dielectric constant is lifted, it includes：By the multilayer stack structure produced by a machine table and
Two end-electrode structures.The multilayer stack structure includes a bearing substrate, multiple metal levels and multiple insulating barriers, and more
The individual metal level and multiple insulating barriers alternately storehouse on the bearing substrate.Two end-electrode structures point
The two-phase for not coating the multilayer stack structure is tossed about end.Wherein, each described insulating barrier includes an insulation material layer
And multiple Nanometer materials being mixed into the insulation material layer, to increase the dielectric constant of the multilayer stack structure.Its
In, the machine table has multiple machining areas along a plane formula production line sequential, and the machine table is every
Include the metal level processing module and one for forming the corresponding metal level in one machining area to be used for
Form the insulating barrier processing module of the corresponding insulating barrier.
Further, each described Nanometer material is nm graphene, carbon nanotube, nm metal wire and nm
Any one either one kind among metallic particles is by nm graphene, carbon nanotube, nm metal wire and nm metal
Any two or more mixed nanocomposites formed among particle, wherein, each described end-electrode structure includes
One is used to coat the first clad of the side end of the multilayer stack structure, one for coating first clad
The second clad and one be used to coat the 3rd clad of second clad, wherein, the multilayer stack structure
And two end-electrode structures are all coated by a packing colloid, and described in two two in electrical contact of conductive pin difference
End-electrode structure and exposed from the packing colloid and go out.
The beneficial effects of the present invention are the thin-film capacitor for being used to be lifted dielectric constant that technical solution of the present invention is provided
Device and preparation method thereof, it can be by the way that " each described insulating barrier includes an insulation material layer and multiple is mixed into the insulation
The technical characteristic of Nanometer material in material layer, to increase the dielectric constant of the multilayer stack structure " is described thin to be lifted
The overall dielectric constant of membrane capacitance.
For the enabled feature and technology contents for being further understood that the present invention, refer to below in connection with the present invention specifically
Bright and accompanying drawing, however the accompanying drawing provided be merely provided for refer to explanation, not be used for the present invention is any limitation as.
Brief description of the drawings
Fig. 1 is the flow that the present invention is used to lift a portion of the preparation method of the thin film capacitor of dielectric constant
Figure.
Fig. 2 is the flow that the present invention is used to lift the another part of the preparation method of the thin film capacitor of dielectric constant
Figure.
Fig. 3 is the functional block diagram of machine table of the present invention.
Fig. 4 is the schematic diagram of machine table of the present invention.
Fig. 5 is metal level processing module and insulating barrier processing module in the 1st machining area of machine table of the present invention
Schematic diagram.
Fig. 6 is that machine table of the present invention is coated with the 1st insulating barrier on the 1st metal level in the 1st machining area
Diagrammatic cross-section.
Fig. 7 is metal level processing module and insulating barrier processing module in the 2nd machining area of machine table of the present invention
Schematic diagram.
Fig. 8 is that machine table of the present invention is coated with the 2nd insulating barrier on the 2nd metal level in the 2nd machining area
Diagrammatic cross-section.
Fig. 9 is metal level processing module and insulating barrier processing module in the 3rd machining area of machine table of the present invention
Schematic diagram.
Figure 10 is that machine table of the present invention is coated with the 3rd insulating barrier on the 3rd metal level in the 3rd machining area
Diagrammatic cross-section.
Figure 11 is the diagrammatic cross-section that the present invention is used to lift the thin film capacitor of dielectric constant.
Figure 12 is that the cut-away section of the multilayer stack structure of thin film capacitor of the present invention for lifting dielectric constant shows
It is intended to.
Figure 13 is that the present invention is applied to the first thin film capacitor encapsulation knot for lifting the thin film capacitor of dielectric constant
The diagrammatic cross-section of structure.
Figure 14 is that the present invention is applied to second of thin film capacitor encapsulation knot for lifting the thin film capacitor of dielectric constant
The diagrammatic cross-section of structure.
Embodiment
Be below illustrated by particular specific embodiment it is presently disclosed about " be used for lift the thin of dielectric constant
The embodiment of membrane capacitance and preparation method thereof ", those skilled in the art can understand this by content disclosed in this specification
The advantages of invention and effect.The present invention can be implemented or applied by other different specific embodiments, in this specification
Every details may be based on different viewpoints and application, in the lower various modifications of progress without departing from the spirit and change.In addition,
The accompanying drawing of the present invention is only simple schematically illustrate, not according to the description of actual size, is stated.Following embodiment will be entered
One step describes the correlation technique content of the present invention, but disclosure of that and the technical scope for being not used to the limitation present invention in detail.
Refer to shown in Fig. 1 to Figure 12, the present invention provides a kind of making for being used to lift the thin film capacitor Z of dielectric constant
Method, it includes：First, coordinate shown in Fig. 1 to Fig. 5, a bearing substrate 10 is placed on a machine table M, wherein processing
Board M has multiple machining area R along a plane formula production line sequential, and machine table M each processing district
Include an a metal level processing module X and insulating barrier processing module Y (S100) in the R of domain；Then, coordinate Fig. 1, Fig. 2, Fig. 3 with
And shown in Fig. 5, by the metal level processing module X in the 1st machining area R (R1), to be coated with one the 1st metal level 11
In (S102) on bearing substrate 10；Then, coordinate shown in Fig. 1, Fig. 2, Fig. 3 and Fig. 5, by positioned at the 1st machining area R
(R1) the insulating barrier processing module Y in, to be coated with one the 1st insulating barrier 12 in the 1st metal level of covering on bearing substrate 10
11(S104)；Then, coordinate shown in Fig. 1 to Fig. 4 and Fig. 7 to Figure 11, n times repeat step is sequentially performed, to complete a multilayer
The making of formula stack architecture 1, wherein n times repeat the order of step for the 1st, 2,3 ..., n times.It is worth noting that, above-mentioned steps
In used coating (coating) spraying (spraying) can also be used or print (printing) to replace.
First, especially to illustrate that, for example, as shown in figure 4, multiple machining area R can give birth to along a plane formula
Producing line sequential, that is to say, that this plane formula production line does not have too big high low head.In addition, this plane formula produces
Line can be straight line or non-rectilinear production line or the production line for encompassing a circle.Furthermore machine table M includes one
For point-blank drive bearing substrate 10 sequentially by multiple machining area R transmission mechanism T (such as using transmission belt coordinate it is more
Individual roller bearing drives), and can provide a room temperature environment in each machining area R, that is to say, that in each machining area R
A vacuum environment need not be additionally provided, as long as but providing about 25 DEG C of normal temperature working environment.
Furthermore, for example, coordinate shown in Fig. 3 and Fig. 5, each metal level processing module X includes one and is used to be formed
The metal level coating modules A of metal level 11 and a first baking module B for toasting formed metal level 11, and often
One insulating barrier processing module Y includes an insulating barrier coating module C and one for being used to be formed insulating barrier 12 and is used to toast institute's shape
Into insulating barrier 12 the second baking module D.
For further, coordinate shown in Fig. 1 to Fig. 5, passing through the metal level in the 1st machining area R (R1)
Processing module X, to be coated with the 1st metal level 11 in the step S102 on bearing substrate 10, still further comprise：First, lead to
The metal level coating modules A crossed in the 1st machining area R (R1), to be coated with the 1st metal level 11 on bearing substrate 10
(S102a)；Then, by the first baking module B in the 1st machining area R (R1), to toast the 1st metal level 11
(S102b), whereby to cause metal level 11 to be hardened.
From the above, coordinate shown in Fig. 1 to Fig. 5, processed by the insulating barrier in the 1st machining area R (R1)
Module Y, to be coated with the 1st insulating barrier 12 in the step S104 on the 1st metal level 11, still further comprise：First, pass through
Insulating barrier coating module C in the 1st machining area R (R1), to be coated with the 1st insulating barrier 12 on bearing substrate 10
Cover the 1st metal level 11 (S104a)；Then, by the second baking module D in the 1st machining area R (R1), with
The 1st insulating barrier 12 (S104b) is toasted, whereby to cause insulating barrier 12 to be hardened.
It is noted that coordinating shown in Fig. 5 and Fig. 6, each insulating barrier 12 belongs to composite layer, and each
Individual insulating barrier 12 still further comprises an insulation material layer 120 and multiple Nanometer materials being mixed into insulation material layer 120
121, whereby to increase the dielectric constant of multilayer stack structure 1.For example, Nanometer material 121 can be nm graphene, how
Rice carbon pipe, nm metal wire, nm metallic particles, ceramic material (such as oxide, nitride or carbide etc.) and
Any one among high polymer material, or Nanometer material 121 can also be it is a kind of by nm graphene, carbon nanotube,
Nm metal wire, nm metallic particles, ceramic material (such as oxide, nitride or carbide etc.) and macromolecule material
Any two or more mixed nanocomposites formed among material.
For further, coordinate shown in Fig. 1 to Fig. 9, in sequentially n times repeat step is performed, each repeat step
Including：First, by the metal level processing module X in the N+1 machining area R, to be coated with the N+1 metal level 11
In covering n-th metal level 11 (S106) on n-th insulating barrier 12；Then, by the N+1 machining area R
Insulating barrier processing module Y, to be coated with the N+1 insulating barrier 12 in the N+1 metal level 11 of covering on n-th insulating barrier 12
(S108)。
For further, coordinate shown in Fig. 1 to Fig. 9, add by the metal level in the N+1 machining area R
Work module X, to be coated with the N+1 metal level 11 in the step of covering n-th metal level 11 on n-th insulating barrier 12, also
Further comprise：First, modules A is coated with by the metal level in the N+1 machining area R, to be coated with the N+1 metal
Layer 11 on n-th insulating barrier 12 in covering n-th metal level 11 (S106a)；Then, by positioned at the N+1 machining area R
The first interior baking module B, to toast the N+1 metal level 11 (S106b), whereby to cause the N+1 metal level 11 hard
Change.Furthermore by the insulating barrier processing module Y in the N+1 machining area R, be coated with the N+1 insulating barrier 12 in
In the step of covering the N+1 metal level 11 on n-th insulating barrier 12, still further comprise：First, by positioned at N+1
Insulating barrier coating module C in individual machining area R, to be coated with the N+1 insulating barrier 12 in covering the on n-th insulating barrier 12
N+1 metal level 11 (S108a)；Then, by the second baking module D in the N+1 machining area R, to toast N
+ 1 insulating barrier 12 (S108b), whereby to cause the N+1 insulating barrier 12 to be hardened.
For example, coordinate shown in Fig. 2, Fig. 4 and Fig. 7, (the 1st repeat step is namely performed) as N=1, it is first
First, modules A is coated with by the metal level in the 2nd machining area R (R2), it is exhausted in the 1st to be coated with the 2nd metal level 11
The 1st metal level 11 is covered in edge layer 12；Then, by the first baking module B in the 2nd machining area R (R2),
To toast the 2nd metal level 11；Then, module C is coated with by the insulating barrier in the 2nd machining area R (R2), with coating
2nd insulating barrier 12 is in the 2nd metal level 11 of covering on the 1st insulating barrier 12；Then, by positioned at the 2nd machining area R
(R2) the second baking module D in, to toast the 2nd insulating barrier 12, whereby to cause the 2nd insulating barrier 12 to be hardened.
It is noted that coordinating shown in Fig. 7 and Fig. 8, each insulating barrier 12 belongs to composite layer, and each
Individual insulating barrier 12 still further comprises an insulation material layer 120 and multiple Nanometer materials being mixed into insulation material layer 120
121, whereby to increase the dielectric constant of multilayer stack structure 1.For example, Nanometer material 121 can be nm graphene, how
Rice carbon pipe, nm metal wire, nm metallic particles, ceramic material (such as oxide, nitride or carbide etc.) and
Any one among high polymer material, or Nanometer material 121 can also be it is a kind of by nm graphene, carbon nanotube,
Nm metal wire, nm metallic particles, ceramic material (such as oxide, nitride or carbide etc.) and macromolecule material
Any two or more mixed nanocomposites formed among material.
For example, coordinate shown in Fig. 2, Fig. 4 and Fig. 9, (the 2nd repeat step is namely performed) as N=2, it is first
First, modules A is coated with by the metal level in the 3rd machining area R (R3), it is exhausted in the 2nd to be coated with the 3rd metal level 11
The 2nd metal level 11 is covered in edge layer 12；Then, by the first baking module B in the 3rd machining area R (R3),
To toast the 3rd metal level 11；Then, module C is coated with by the insulating barrier in the 3rd machining area R (R3), with coating
3rd insulating barrier 12 is in the 3rd metal level 11 of covering on the 2nd insulating barrier 12；Then, by positioned at the 3rd machining area R
(R3) the second baking module D in, to toast the 3rd insulating barrier 12, whereby to cause the 3rd insulating barrier 12 to be hardened.
It is noted that coordinating shown in Fig. 9 and Figure 10, each insulating barrier 12 belongs to composite layer, and often
One insulating barrier 12 still further comprises an insulation material layer 120 and multiple Nanometer materials being mixed into insulation material layer 120
121, whereby to increase the dielectric constant of multilayer stack structure 1.For example, Nanometer material 121 can be nm graphene, how
Rice carbon pipe, nm metal wire, nm metallic particles, ceramic material (such as oxide, nitride or carbide etc.) and
Any one among high polymer material, or Nanometer material 121 can also be it is a kind of by nm graphene, carbon nanotube,
Nm metal wire, nm metallic particles, ceramic material (such as oxide, nitride or carbide etc.) and macromolecule material
Any two or more mixed nanocomposites formed among material.
Furthermore coordinate shown in Fig. 1, Fig. 2 and Figure 11, after sequentially n times repeat step is performed, still further comprise：
Two end-electrode structures 2 are formed, are tossed about end 20P (S110) with being respectively coated by the two-phase of multilayer stack structure 1, it is thin to complete
Membrane capacitance Z making.For example, each end-electrode structure 2 includes a side for being used to coat multilayer stack structure 1
The second clad 22 and one that portion 20P the first clad 21, one is used to coat the first clad 21 is used to coat the second bag
3rd clad 23 of coating 22.In addition, the first clad 21, the second clad 22 and the 3rd clad 23 can be respectively
Silver layer, nickel dam and tin layers, but the present invention is not illustrated with this and is limited.
In summary, coordinate shown in Fig. 1 to Figure 12, the present invention provides a kind of thin film capacitor for being used to lift dielectric constant
Z preparation method, it includes：First, a bearing substrate 10 is placed on a machine table M, wherein machine table M has more
Include a metal in the individual machining area R along a plane formula production line sequential, machine table M each machining area R
A layer processing module X and insulating barrier processing module Y；Then, by machine table M multiple metal level processing module X, to divide
Multiple metal levels 11 are not formed, and by machine table M multiple insulating barrier processing module Y, to form multiple insulating barriers respectively
12, alternately storehouse is on bearing substrate 10 for plurality of metal level 11 and multiple insulating barriers 12, to complete a multiple field heap
The making of stack architecture 1；Then, two end-electrode structures 2 are formed, are tossed about end with being respectively coated by the two-phase of multilayer stack structure 1
Portion 20P.
Whereby, coordinate shown in Figure 11 and Figure 12, the present invention provides a kind of thin film capacitor for being used to lift dielectric constant
Z, it includes：One multilayer stack structure 1 and two end-electrode structures 2.Multilayer stack structure 1 includes a bearing substrate
10th, multiple metal levels 11 and multiple insulating barriers 12, and alternately storehouse exists for multiple metal levels 11 and multiple insulating barriers 12
On bearing substrate 10.The end 20P in addition, the two-phase that two end-electrode structures 2 are respectively coated by multilayer stack structure 1 is tossed about.Separately
Outside, each insulating barrier 12 belongs to composite layer, and each insulating barrier 12 still further comprises an insulation material layer 120
And multiple Nanometer materials 121 being mixed into insulation material layer 120, whereby to increase the dielectric constant of multilayer stack structure 1.
For example, Nanometer material 121 can be nm graphene, carbon nanotube, nm metal wire, nm metallic particles, ceramic material
Any one among (such as oxide, nitride or carbide etc.) and high polymer material, or Nanometer material
121 can also be a kind of by nm graphene, carbon nanotube, nm metal wire, nm metallic particles, ceramic material (such as oxygen
Compound, nitride or carbide etc.) and high polymer material among any two or more mixed nms formed answer
Condensation material.
It is worth noting that, in the other possible embodiments of the present invention, machine table M can be with least one processing
Include processing along a metal level of a plane formula production line sequential in region R, machine table M an at least machining area R
A module X and insulating barrier processing module Y, and plane formula production line can be a flat annular line.
What deserves to be explained is lifting for wherein one, coordinate shown in Figure 11 and Figure 13, thin film capacitor Z can first allow
One packing colloid P (can be as made by insulating materials) is packaged, and then again leads two that are electrically connected at thin film capacitor Z
Electric pin L extends to packing colloid P outside from thin film capacitor Z, is tied whereby with completing the encapsulation of one of which thin film capacitor
The making of structure.In addition, lift it is other coordinate shown in Figure 11 and Figure 14 for one, thin film capacitor Z can first allow a packaging plastic
Body P is packaged, and the thin film capacitor Z packaged by packed colloid P then is contained in into a metal shell H (such as aluminum hull) again
It is interior, two conductive pin L for being electrically connected at thin film capacitor Z are finally extended to metal shell H's from thin film capacitor Z again
Outside, whereby to complete the making of another thin film capacitor encapsulating structure.That is, multilayer stack structure 1 and two
Individual end-electrode structure 2 can all be coated by a packing colloid P, and two conductive pin L can distinguish two termination electrodes in electrical contact
Structure 2 and exposed from packing colloid P and go out.However, the thin film capacitor encapsulating structure of the present invention is not with above-mentioned institute's illustrated example
It is limited.
In summary, the beneficial effects of the present invention are what technical solution of the present invention was provided is used to lift dielectric constant
Thin film capacitor Z and preparation method thereof, it can be by the way that " insulating barrier 12 includes an insulation material layer 120 and multiple is mixed into absolutely
The technical characteristic of Nanometer material 121 in edge material layer 120, to increase the dielectric constant of multilayer stack structure 1 ", with lifting
Thin film capacitor Z overall dielectric constant, and then effectively lift thin film capacitor Z piece electrical performance, wherein electric property
Including：Lift heat endurance, lifting capacitance (Capacitance, Cap), reduce equivalent series resistance (Equivalent
Series Resistance, ESR), reduce fissipation factor (Dissipation Factor, DF), reduce leakage current (Leakage
Current, LC) etc..
Further for, technical solution of the present invention provided be used for lifted dielectric constant thin film capacitor Z and its
Preparation method, its can by " machine table M have multiple machining area R " along a plane formula production line sequential and
" include an a metal level processing module X and insulating barrier processing module Y " skill in machine table M each machining area R
Art feature so that multiple metal level 11 and multiple insulating barriers 12 can alternately storehouse be on bearing substrate 10, whereby with complete
Into the making of thin film capacitor Z multilayer stack structure 1.
Content disclosed above is only the preferred possible embodiments of the present invention, and the right for not thereby limiting to the present invention will
The protection domain asked, so every equivalence techniques change done with description of the invention and accompanying drawing content, is both contained in this
In the scope of the claims of invention.
Claims (10)
1. a kind of preparation method for being used to lift the thin film capacitor of dielectric constant, it is characterised in that described to be used to lift dielectric
The preparation method of the thin film capacitor of constant includes：
One bearing substrate is placed on a machine table, wherein, the machine table has multiple along a plane formula production line
The machining area of sequential, and the machine table each described machining area in include a metal level processing module with
An and insulating barrier processing module；
By the metal level processing module in the 1st machining area, to be coated with one the 1st metal level in described
On bearing substrate；
By the insulating barrier processing module in the 1st machining area, to be coated with one the 1st insulating barrier in described
The 1st metal level is covered on bearing substrate；
N times repeat step is sequentially performed, to complete the making of a multilayer stack structure, wherein, the suitable of step is repeated described in n times
Sequence is the 1st, 2,3 ..., n times, and each described repeat step includes：
By the metal level processing module in N+1 machining areas, be coated with the N+1 metal level in
The n-th metal level is covered described in n-th on insulating barrier；And
By the insulating barrier processing module in N+1 machining areas, be coated with the N+1 insulating barrier in
The N+1 metal levels are covered described in n-th on insulating barrier；And
Two end-electrode structures are formed, are tossed about end with being respectively coated by the two-phase of the multilayer stack structure；
Wherein, each described insulating barrier includes an insulation material layer and multiple nm materials being mixed into the insulation material layer
Material, to increase the dielectric constant of the multilayer stack structure.
2. the preparation method according to claim 1 for being used to lift the thin film capacitor of dielectric constant, it is characterised in that institute
Stating machine table includes a transmission mechanism for being used to point-blank drive the bearing substrate sequentially to pass through multiple machining areas,
And a room temperature environment is provided in each described machining area, wherein, each described metal level processing module includes a metal
Layer coating module and one first baking module, and each described insulating barrier processing module include insulating barrier coating module with
And one second baking module, wherein, each described end-electrode structure includes one and is used to coat the multilayer stack structure
First clad of the side end, one be used for the second clad for coating first clad and one be used to coating it is described
3rd clad of the second clad.
3. the preparation method according to claim 2 for being used to lift the thin film capacitor of dielectric constant, it is characterised in that
By the metal level processing module in the 1st machining area, held with being coated with the 1st metal level in described
In step on carried base board, still further comprise：
Module is coated with by the metal level in the 1st machining area, to be coated with the 1st metal level in institute
State on bearing substrate；And
By first baking module in the 1st machining area, to toast the 1st metal level.
4. the preparation method according to claim 2 for being used to lift the thin film capacitor of dielectric constant, it is characterised in that
By the insulating barrier processing module in the 1st machining area, held with being coated with the 1st insulating barrier in described
In the step of covering the 1st metal level on carried base board, still further comprise：
Module is coated with by the insulating barrier in the 1st machining area, to be coated with the 1st insulating barrier in institute
State on bearing substrate and cover the 1st metal level；And
By second baking module in the 1st machining area, to toast the 1st insulating barrier.
5. the preparation method according to claim 2 for being used to lift the thin film capacitor of dielectric constant, it is characterised in that
By the metal level processing module in N+1 machining areas, to be coated with the N+1 metal levels in the
In the step of covering the n-th metal level on N number of insulating barrier, still further comprise：
Module is coated with by the metal level in the N+1 machining areas, to be coated with the N+1 metal levels
In the n-th metal level is covered described in n-th on insulating barrier；And
By first baking module in the N+1 machining areas, to toast the N+1 metal levels.
6. the preparation method according to claim 2 for being used to lift the thin film capacitor of dielectric constant, it is characterised in that
By the insulating barrier processing module in N+1 machining areas, to be coated with the N+1 insulating barriers in the
In the step of covering the N+1 metal levels on N number of insulating barrier, still further comprise：
Module is coated with by the insulating barrier in the N+1 machining areas, to be coated with the N+1 insulating barriers
In the N+1 metal level is covered described in n-th on insulating barrier；And
By second baking module in the N+1 machining areas, to toast the N+1 insulating barriers.
7. a kind of preparation method for being used to lift the thin film capacitor of dielectric constant, it is characterised in that described to be used to lift dielectric
The preparation method of the thin film capacitor of constant includes：
One bearing substrate is placed on a machine table, wherein, the machine table has an at least machining area, described to add
Include at least one machining area of work board along a metal level processing module of a plane formula production line sequential with
An and insulating barrier processing module；
By the metal level processing module of the machine table at least one machining area, to form multiple gold
Belong to layer, and by the insulating barrier processing module of the machine table at least one machining area, it is more to be formed
Alternately storehouse is on the bearing substrate for individual insulating barrier, the plurality of metal level and multiple insulating barriers, with complete
Into the making of a multilayer stack structure；And
Two end-electrode structures are formed, are tossed about end with being respectively coated by the two-phase of the multilayer stack structure；
Wherein, each described insulating barrier includes an insulation material layer and multiple nm materials being mixed into the insulation material layer
Material, to increase the dielectric constant of the multilayer stack structure.
8. the preparation method according to claim 7 for being used to lift the thin film capacitor of dielectric constant, it is characterised in that institute
Stating machine table includes a transmission mechanism for being used to point-blank drive the bearing substrate to pass through at least one machining area, and
One room temperature environment is provided at least one machining area, wherein, it is described for being formed that the metal level processing module includes one
The metal level coating module of metal level and first baking module for toasting the metal level, and the insulating barrier is processed
Module includes insulating barrier coating module and second baking for toasting the insulating barrier for being used to form the insulating barrier
Grilled mold block, wherein, each described end-electrode structure includes a side end for being used to coat the multilayer stack structure
The first clad, one be used for coat first clad the second clad and one be used for coat second clad
The 3rd clad, wherein, the plane formula production line is a flat annular line.
A kind of 9. thin film capacitor for being used to lift dielectric constant, it is characterised in that the film for being used to lift dielectric constant
Capacitor includes：
Pass through the multilayer stack structure produced by a machine table；And
Two end-electrode structures, the two-phase that two end-electrode structures are respectively coated by the multilayer stack structure are tossed about end
Portion；
Wherein, the multilayer stack structure includes a bearing substrate, multiple metal levels and multiple insulating barriers, and multiple described
Metal level and multiple insulating barriers alternately storehouse on the bearing substrate；
Wherein, each described insulating barrier includes an insulation material layer and multiple nm materials being mixed into the insulation material layer
Material, to increase the dielectric constant of the multilayer stack structure；
Wherein, the machine table has multiple machining areas along a plane formula production line sequential, and the processing machine
Include in each of platform machining area a metal level processing module for being used to forming the corresponding metal level and
The one insulating barrier processing module for forming the corresponding insulating barrier.
10. the thin film capacitor according to claim 9 for being used to lift dielectric constant, it is characterised in that described in each
Nanometer material be nm graphene, carbon nanotube, nm metal wire and nm metallic particles among any one either
It is a kind of by any two or more mixed among nm graphene, carbon nanotube, nm metal wire and nm metallic particles
The nanocomposite formed, wherein, each described end-electrode structure includes one and is used to coat the multilayer stack structure
The side end the first clad, one be used for coat first clad the second clad and one be used for coat institute
The 3rd clad of the second clad is stated, wherein, the multilayer stack structure and two end-electrode structures are all by one
Packing colloid is coated, and two conductive pins distinguish two end-electrode structures in electrical contact and naked from the packing colloid
Reveal.
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| CN201610692995.1A CN107768142A (en) | 2016-08-19 | 2016-08-19 | Thin film capacitor for lifting dielectric constant and preparation method thereof |
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| CN201610692995.1A CN107768142A (en) | 2016-08-19 | 2016-08-19 | Thin film capacitor for lifting dielectric constant and preparation method thereof |
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Application publication date: 20180306 |