CN107759221B - 太赫兹(Tera Hertz、THz)复合材料及其制作方法 - Google Patents
太赫兹(Tera Hertz、THz)复合材料及其制作方法 Download PDFInfo
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- CN107759221B CN107759221B CN201610688708.XA CN201610688708A CN107759221B CN 107759221 B CN107759221 B CN 107759221B CN 201610688708 A CN201610688708 A CN 201610688708A CN 107759221 B CN107759221 B CN 107759221B
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- 239000002131 composite material Substances 0.000 title claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- 238000000227 grinding Methods 0.000 claims abstract description 26
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims abstract description 25
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 22
- 229910001748 carbonate mineral Inorganic materials 0.000 claims abstract description 21
- 229910052604 silicate mineral Inorganic materials 0.000 claims abstract description 20
- 238000002844 melting Methods 0.000 claims abstract description 12
- 230000008018 melting Effects 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 11
- 238000012545 processing Methods 0.000 claims abstract description 11
- 239000002994 raw material Substances 0.000 claims abstract description 11
- 238000007873 sieving Methods 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 10
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 6
- 238000007667 floating Methods 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 23
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical group [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 17
- 239000004115 Sodium Silicate Substances 0.000 claims description 14
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 13
- -1 silica compound Chemical class 0.000 claims description 11
- 239000010439 graphite Substances 0.000 claims description 10
- 229910002804 graphite Inorganic materials 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 10
- 229910021532 Calcite Inorganic materials 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000000853 adhesive Substances 0.000 claims description 7
- 229910052613 tourmaline Inorganic materials 0.000 claims description 7
- 239000011032 tourmaline Substances 0.000 claims description 7
- 229940070527 tourmaline Drugs 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 229910021387 carbon allotrope Inorganic materials 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 5
- 239000003673 groundwater Substances 0.000 claims description 3
- 239000002318 adhesion promoter Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 8
- 239000011230 binding agent Substances 0.000 abstract description 6
- 238000002156 mixing Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 235000012239 silicon dioxide Nutrition 0.000 description 14
- 150000001450 anions Chemical class 0.000 description 13
- 235000019738 Limestone Nutrition 0.000 description 10
- 239000006028 limestone Substances 0.000 description 10
- 230000005855 radiation Effects 0.000 description 9
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical group [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 5
- 239000000654 additive Substances 0.000 description 5
- 239000010459 dolomite Substances 0.000 description 5
- 229910000514 dolomite Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 229910003481 amorphous carbon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 description 3
- 239000011707 mineral Substances 0.000 description 3
- 235000010755 mineral Nutrition 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 235000019353 potassium silicate Nutrition 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 2
- 235000017491 Bambusa tulda Nutrition 0.000 description 2
- 241001330002 Bambuseae Species 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 2
- 239000011425 bamboo Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 150000001721 carbon Chemical group 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000007709 nanocrystallization Methods 0.000 description 2
- 239000000615 nonconductor Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 2
- 229910001950 potassium oxide Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910021427 silicon allotrope Inorganic materials 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 2
- 229910001948 sodium oxide Inorganic materials 0.000 description 2
- 241000894006 Bacteria Species 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000503 Na-aluminosilicate Inorganic materials 0.000 description 1
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 125000000129 anionic group Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000017531 blood circulation Effects 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000000404 calcium aluminium silicate Substances 0.000 description 1
- 235000012215 calcium aluminium silicate Nutrition 0.000 description 1
- WNCYAPRTYDMSFP-UHFFFAOYSA-N calcium aluminosilicate Chemical compound [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O WNCYAPRTYDMSFP-UHFFFAOYSA-N 0.000 description 1
- 229940078583 calcium aluminosilicate Drugs 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000011045 chalcedony Substances 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000035558 fertility Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910052631 glauconite Inorganic materials 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 235000014380 magnesium carbonate Nutrition 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004060 metabolic process Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 210000004088 microvessel Anatomy 0.000 description 1
- 239000002366 mineral element Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011022 opal Substances 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000011028 pyrite Substances 0.000 description 1
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 description 1
- 229910052683 pyrite Inorganic materials 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000429 sodium aluminium silicate Substances 0.000 description 1
- 235000012217 sodium aluminium silicate Nutrition 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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Abstract
本发明涉及一种太赫兹（Tera Hertz、THz）复合材料及其制作方法，该复合材料组成包括：50~65份纳米晶硅(nc‑Si)、6~10份天然硅氧化合物、4~8份天然硅酸盐矿物、3~7份天然碳酸盐矿物以及6~10份助粘结剂。该制作方法为：1.原料按比例调配；2.过筛；3.加水研磨至微纳米化；4.烘干水分；5.粉粹(粉末化)；6.置于耐高温坩锅高温熔融；7.溶融物倒入模具(模具内部需先做脱模剂处理)；8.表面研磨，去除高温熔融浮于表面杂质；9.研磨加工成预定形状。
Description
技术领域
本发明涉及一种复合材料，特别是指一种太赫兹(Tera Hertz、THz)复合材料的制作方法与组成物。
背景技术
现在虽已有许多种远红外线的产品，在吉赫兹(Giga Hertz)波(10)的9次方应用的产品；此种结构被应用很久了，但对更高更宽广的应用，因无相关检测仪器，故而影响到太赫兹的应用性，为了提供更符合实际需求的物品，于是发明人进行研发，以解决现有使用上易产生的问题。
THz波(太赫兹Tera Hertz波1012)或称为THz射线(太赫兹射线)是从上个世纪80年代中后期，才被正式命名的，在此以前科学家们将其统称为远红外射线。太赫兹波是指频率在0.1THz到10THz范围的电磁波，波长大概在 0.03到3mm范围，介于微波与红外之间。实际上，早在一百年前，就有科学工作者涉及过这一波段。在1896年和1897年，Rubens和Nichols就涉及到这一波段，红外光谱到达9um(0.009mm)和20um(0.02mm)，之后又有到达50um 的记载。之后的近百年时间，远红外技术取得了许多成果，并且已经产业化。但是涉及太赫兹波段的研究结果和数据非常少，主要是受到有效太赫兹产生源和灵敏探测器的限制，因此这一波段也被称为THz间隙。随着80年代一系列新技术、新材料的发展，特别是超快技术的发展，使得获得宽带稳定的脉冲THz源成为一种准常规技术，THz技术得以迅速发展，并在实际范围内掀起一股THz研究热潮。
发明内容
本发明的主要目的在于提供一种太赫兹(Tera Hertz、THz)复合材料，找到特殊的制程与配方组成物能释放对大地生物有益的太赫兹远红外线(生育光波)，以产生对人类使用上更高的便利性。
为达成上述的目的，本发明提供一种复合材料，该复合材料组成包括 50～65份纳米晶硅(nc-Si)、6～10份天然硅氧化合物、4～8份天然硅酸盐矿物、 3～7份天然碳酸盐矿物以及6～10份助黏结剂。
其中，天然硅氧化合物为玄武岩，天然硅酸盐矿物为石英与电气石，天然碳酸盐矿物为石灰岩与白云石，石灰岩有霰石与方解石；纳米晶硅的尺寸小于500纳米。
其中，助黏结剂为硅酸钠。
本发明另外提供一种复合材料制法，包括如下步骤：1.原料按比例调配； 2.过筛；3.加水研磨至微纳米化；4.烘干水分；5.粉粹(粉末化)；6.置于耐高温坩埚高温熔融；7.熔融物倒入模具(模具内部需先做脱模剂处理)；8.表面研磨，去除高温熔融浮于表面杂质；9.研磨加工成预定形状，加工研磨后含水的剩余物，经过烘干后，过筛，收集。
本发明另外提供一种太赫兹复合材料及制作方法：复合材料组成包括： 50～60份纳米晶硅(nc-Si)、6～10份天然硅氧化合物、4～8份天然硅酸盐矿物、 3～7份天然碳酸盐矿物、2～5份碳类的同素异形体以及6～10％助黏结剂。
其中，天然硅氧化合物为玄武岩，天然硅酸盐矿物为石英或电气石，天然碳酸盐矿物为方解石，碳为石墨或人工制成物；纳米晶硅的尺寸小于500 纳米。
其中，助黏结剂为硅酸钠。
复合材料制法包括如下步骤：1.原料以上述比例调配；2.过筛；3.加水研磨至微纳米化；4.烘干水分；5.粉粹(粉末化)；6.置于耐高温坩埚高温熔融； 7.熔融物倒入模具，模具内部需先做脱模剂处理；8.表面研磨，去除高温熔融浮于表面杂质；9.研磨加工成预定形状；加工研磨后含水的剩余物，经过烘干后，过筛，收集。
附图说明
为使贵审查员能更进一步了解本发明为达成预定目的所采取的技术、手段及功效，现举一较佳可行的实施例，并配合附图详细说明如后，相信本发明的目的、特征与优点，当可由此得一深入且具体的了解。
图1：本发明中单质硅的发射率-波长图；
图2：本发明中单质碳的发射率-波长图；
图3：本发明中成品A的反射率-频率图；
图4：本发明中成品B的反射率-频率图；
图5：本发明中与现有技术相比较的发射率-波长图；
图6：本发明的反射率测量条件；
图7：本发明的波长-反应射率图。
具体实施方式
本发明一种实施例为：一种太赫兹(Tera Hertz、THz)复合材料，复合材料组成：具有主原料50～60份的纳米晶硅(nc-Si)、6～10份的天然硅氧化合物，硅氧化合物为玄武岩，及4～8份天然硅酸盐矿物、3～7份天然碳酸盐矿物、 2～5份碳类的同素异形体，天然硅酸盐矿物为石英与电气石，天然碳酸盐矿物为石灰岩与白云石，石灰岩有霰石与方解石，碳为石墨或人工制成物，以及6～10份助黏结剂，助粘结剂的成份为硅酸钠(水玻璃)。(图3所示为成品A 的反射率-频率图)
本发明另一种实施例为：一种太赫兹(Tera Hertz、THz)复合材料，复合材料组成：具有主原料50～65份的纳米晶硅(nc-Si)、6～10份的天然硅氧化合物，硅氧化合物为玄武岩，及4～8份天然硅酸盐矿物、3～7份天然碳酸盐矿物，天然硅酸盐矿物为石英与电气石，天然碳酸盐矿物为石灰岩与白云石，石灰岩有霰石与方解石，(优选还可以加2～5份碳类的同素异形体)以及6～10 份助黏结剂，助粘结剂成分为硅酸钠(水玻璃)。(图4所示为成品B的反射率- 频率图)
本发明组成的主原料是：50～65份纳米晶硅(nc-Si)。纳米晶硅的尺寸小于500纳米。
硅是一种化学元素，它的化学符号是Si，在地壳中，它是第二丰富的元素，构成地壳总质量的25.7％。结晶型的硅是暗黑蓝色的，很脆，是典型的半导体，化学性质非常稳定。在常温下，除氟化氢以外，很难与其他物质发生反应。纳米晶硅(nc-Si)同非晶硅(a-Si)一样是硅的一种同素异型体。
纳米晶硅和非晶硅的区别在于，纳米晶硅具有小的无定形态的硅晶粒。相比之下，多晶硅完全由晶界相隔的硅晶体颗粒构成。纳米晶硅有时也被称为微晶硅(μc-Si)。差别只在于晶粒的颗粒大小。大部分颗粒大小在微米量级的材料实际上是精细颗粒多晶硅，所以纳米晶硅纳米化能够有更高更宽的发射远红外线波。
硅也就是“石英矿”(学名：二氧化硅SiO2)，是一种处处可见的矿物元素。硅的半导体特性(硅的平常状态为非导体，由于它的导体与非导体之间的能阶很短，一旦施予能量或热量，便跃升为导体，是典型的半导体)、化学性质非常稳定，硅矿(二氧化硅)纯化，利用物理方法：粉碎、超细研磨、锻烧、电极分解、酸洗、萃取、晶体重排再结晶等方式，将石英中“氧”元素和杂质去除，提高硅的纯度。纯硅纳米化之后能够有更高更宽的发射远红外线波，而硅在波长在5um(图1)以上呈现高的发射率。
添加剂1：6～10份天然硅氧化合物。为玄武岩。玄武岩的主要成分是硅铝酸钠或硅铝酸钙，主要由二氧化硅、三氧化二铝、氧化铁、氧化钙、氧化镁、氧化钾、氧化钠组成，其中，二氧化硅含量最多，约占45％～52％左右。从而使天然硅氧化合物形成天然硅的异形体，由于成分材料的差别，它们在远红外线波长区最终显示了高的平均发射率，并使该硅的异形体能够有效填补太赫兹的波长不足部分。
添加剂2：4～8份具有阴离子[SiO4]-4的天然硅酸盐矿物。硅酸盐的复杂性在于阴离子，阴离子的基本结构单元跟SiO2一样是硅氧四面体。硅酸盐矿物的特征构造中就有不同硅和氧的比例，由此再来决定各硅酸盐类的构造和成分，形成聚合作用，就是一个或二个以上硅氧四面体之间以共有氧的方式结合起来，造成一个更大的阴离子的作用，而大的阴离子的作用的辐射特性，是由主要构成组件的阴离子物质决定的，阴离子特性对提高宽波长宽度、发射率有很大的作用。天然硅酸盐矿物为石英(架状硅酸盐类)与电气石(环状硅酸盐类)。
添加剂3：3～7份具有阴离子碳酸盐[CO3]-2的天然碳酸盐矿物。碳酸盐矿物是指石灰岩，主要的阴离子是以方解石(碳酸钙)为主要成分的阴离子碳酸盐[CO3]-2矿物。而石灰岩中常混入白云石、石膏、菱镁矿、黄铁矿、蛋白石、玉髓、石英、海绿石、萤石等。碳酸盐是由碳酸根离子[CO3]-2与其他金属离子组成的化合物，金属阳离子主要有钠、钙、镁、钡、稀土元素、铁、铜、铅、锌、锰等，金属其以键结合阴离子主要成分为碳酸根的碳酸盐矿物(方解石/碳酸钙)，而其辐射特性是由主要构成组件的阴离子物质决定的，其阴离子特性为提高波长宽度。天然碳酸盐矿物为石灰岩与白云石，石灰岩有霰石与方解石。
添加剂4：2～5份碳类的同素异形体。碳的无定形体是碳原子以非晶体形式不规则排列形成的。无定形碳呈粉末状，碳主要成分在正常压力下以石墨的形式存在，其中，每个碳原子都和另外三个碳原子键合，形成平面六边形环平铺结构。这一种网状平面结构能够层叠起来，每层间有弱泛德华力(van der waals’force)。因此石墨性质柔软，也可作润滑剂(因为层与层间能轻易平行滑动)。由于石墨中每个碳原子都有一颗外层离域电子，共同形成遍布整个平面的π-云，所以电能顺着石墨的每个共价键合平面上传导。因此碳的整体电导率低于大部分金属。由于含有离域电子，因此在标准条件下石墨比钻石更加稳定。碳为石墨或人工制成物。
碳类的同素异形体(包括：石墨(天然)、竹碳、碳纳米管)。而碳的无定形体是碳原子以非晶体形式的不规则表现。而碳的波长整体呈现较宽波长，较高的平均发射率(图2)。竹碳与碳纳米管都是人工制品。
助黏结剂：4～7份人造硅酸钠(化学式：Na2SiO3)，俗称泡花碱水玻璃，是由碱金属氧化物和二氧化硅结合而成的，可溶性碱金属硅酸盐材料，也是人造硅的结合物异形体，硬化后形成的二氧化硅网状骨架，补足在烧结过程，失去的网状结构，并且钠从辐射特性上有一定程度帮助，硅酸钠为碱性，而碱性以负电位为主，负电位的辐射特性是由主要构成组件的阴离子物质决定，其阴离子特性对提高宽波长宽度有很大帮助。
本发明主要是以高纯度硅跟无定型碳和碳的同素异形体，配合碳酸盐 [CO3]-2矿物中所含阴离子物质为主，天然硅酸盐矿物的阴离子([SiO4]-4) 为碱性,无色硅酸钠呈透明的粘稠状，为碱性，而碱性为以阴离子负电位为主；玄武岩主要是由二氧化硅、天然氧化物三氧化二铝、氧化铁、氧化钙、氧化镁、氧化钾、氧化钠而形成天然氧化物组成，天然硅酸盐矿物，及碳酸盐矿物和硅酸钠(水玻璃)所含钠盐的成分，碳酸盐矿物所含碳的同素异形体成分，硅酸盐矿物、碳酸盐矿物、硅酸钠、玄武岩所含硅同素异型体，由于成分的匹配，它们在远红外线波长区，最终显示了高和平均发射率，硅的异形体能够有效填补太赫兹的波长不足部分，整体经过调配加工反应而成具有THz 辐射特性的新复合材料形成具有产生太赫兹的(Tera Hertz，THz)复合材料，具有最佳的配比，取之于天然矿物，原料易于取得，而不需要特殊加工提纯，且能确保配方的正确产生效用；是一种于常温便有2μm～1000μm红外线达到平均0.9以上的发射率的材料。
应用领域：1.提高宽波长，提高热辐射散热能力，降低热容；2.太赫兹的穿透能力与分子产生的共振可促进微血管扩张、使血液循环顺畅，促进新陈代谢；3.太赫兹过滤净化水质，抑制细菌滋长，能促使水分子集团(Cluster) 经过共振而细小化；4.特殊的工艺配方能释放对大地生物有益的太赫兹远红外线(生育光波)。
制法：1.原料按前述的两种实施例的比例调配；2.过筛；3.加水研磨至微纳米化；4.烘干水分；5.粉粹(粉末化)；6.置于耐高温坩埚 高温熔融；7.熔融物倒入模具(模具内部需先做脱模剂处理)；8.表面研磨，去除高温熔融浮于表面杂质；9.研磨加工成预定形状；加工研磨后含水的剩余物，经过烘干后，过筛，收集做涂料，塑料等添加剂。
测试条件：1.设备：太赫兹光谱仪检测。用于取得太赫兹反射光谱 (Reflectance)2.环境：干燥的空间。3.充氮封箱消除水蒸气在1.5-3THz范围的吸收验证。4.信号频率：脉冲宽度100FSEC(Pulsewidth 100fsec)、重复频率50MHz(Reptition rate 50mhz)、扫描速度1.6毫米/秒(Scan velocity 1.6mm/sec(sampling rate 1.0khz))、分辨率5.7ghz(Resolution 5.7ghz(0.191cm-2)。(测视结果显示在图3、图4中)
实验表
结论：如图3、图4及图5所示，本发明的材料其太赫兹反射率高达87％到95％之间，图5虚线所示为现有技术对应的曲线，远低于本发明。
总能量＝吸收能量+反射能量透射能量＝放射能量(95％到87％之间)
频率(Frequncy)介于0.2Thz-3Thz，周波数在200Ghz(吉赫兹)到3Thz(太赫兹)时有很好的反射率。波长于1000μm～2μm有近于1的反应射率。
波长介于5μm到1mm由图7证明：
实线为本发明的波长反应射率，一直都高于95％近于1。虚线为现有技术的波长，仅到10μm左右，故其应用性不好。
综上所述的结构，本发明运用新配方组成与制法，所以能提供很好发射率的应用与使用性，为一完全与现有技术不同的制作方法与组成物。
以上所述为本发明的较佳实施例的详细说明与附图，并非用来限制本发明，本发明的所有范围应以权利要求书中的范围为准，凡是专利范围的精神与其类似变化的实施例与近似结构，都应包含于本发明之中。
Claims (8)
1.一种太赫兹复合材料，其特征在于：复合材料组成包括：50~65份的纳米晶硅、6~10份的天然硅氧化合物、4~8份天然硅酸盐矿物、3~7份天然碳酸盐矿物以及6~10份助黏结剂。
2.如权利要求1所述的太赫兹复合材料，其特征在于：天然硅氧化合物为玄武岩，天然硅酸盐矿物为石英或电气石，天然碳酸盐矿物为方解石；纳米晶硅的尺寸小于500纳米。
3.如权利要求1所述的太赫兹复合材料，其特征在于：助黏结剂为硅酸钠。
4.一种如权利要求1所述的太赫兹复合材料的制法，其特征在于：(1)原料按上述权利要求1比例调配；(2)过筛；(3)加水研磨至微纳米化；(4)烘干水分；(5)粉末化；(6)置于耐高温坩埚 高温熔融；(7)熔融物倒入模具，模具内部需先做脱模剂处理；(8)表面研磨，去除高温熔融浮于表面杂质；(9)研磨加工成预定形状；加工研磨后含水的剩余物，经过烘干后，过筛，收集。
5.一种太赫兹复合材料，其特征在于：复合材料组成包括：50~60份的纳米晶硅、6~10份的天然硅氧化合物、4~8份天然硅酸盐矿物、3~7份天然碳酸盐矿物、2~5份碳类的同素异形体以及6~10份助黏结剂。
6.如权利要求5所述的太赫兹复合材料，其特征在于：天然硅氧化合物为玄武岩，天然硅酸盐矿物为石英或电气石，天然碳酸盐矿物为方解石，碳为石墨或人工制成物；纳米晶硅的尺寸小于500纳米。
7.如权利要求5所述的太赫兹复合材料，其特征在于：助黏结剂为硅酸钠。
8.一种如权利要求5所述的太赫兹复合材料的制法，其特征在于：(1)原料按上述权利要求5比例调配；(2)过筛；(3)加水研磨至微纳米化；(4)烘干水分；(5)粉末化；(6)置于耐高温坩埚 高温熔融；(7)熔融物倒入模具，模具内部需先做脱模剂处理；(8)表面研磨，去除高温熔融浮于表面杂质；(9)研磨加工成预定形状；加工研磨后含水的剩余物，经过烘干后，过筛，收集。
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| CN112891754A (zh) * | 2019-11-18 | 2021-06-04 | 上海嘉巷新材料科技有限公司 | 一种太赫兹波无机复合环保材料及其应用 |
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