CN107731670A - 太阳电池用三氯氧磷扩散源瓶 - Google Patents
太阳电池用三氯氧磷扩散源瓶 Download PDFInfo
- Publication number
- CN107731670A CN107731670A CN201710906791.8A CN201710906791A CN107731670A CN 107731670 A CN107731670 A CN 107731670A CN 201710906791 A CN201710906791 A CN 201710906791A CN 107731670 A CN107731670 A CN 107731670A
- Authority
- CN
- China
- Prior art keywords
- source
- bottle body
- air inlet
- inlet pipe
- source bottle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 title claims abstract description 34
- 238000009792 diffusion process Methods 0.000 title claims abstract description 25
- 229910019213 POCl3 Inorganic materials 0.000 title claims abstract description 17
- 239000007789 gas Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明涉及一种太阳电池用三氯氧磷扩散源瓶，包括恒温槽、衬套、源瓶本体，所述恒温槽内侧表面设有衬套，源瓶本体设置在恒温槽内，所述源瓶本体上方设有进气口、出气口，进气口通过进气管与源瓶本体连接，所述进气管伸入源瓶本体底部，进气管底端连接开有孔洞的环形扩散管，所述出气口通过出气管与源瓶本体连接，进气管上设有气流调节阀，源瓶本体内设有超声波发生器，本发明解决了源瓶本体内的源利用不充分和溶液在扩散源瓶内不够均匀的问题。
Description
技术领域
本发明涉及一种扩散源瓶，尤其涉及一种太阳电池用三氯氧磷扩散源瓶。
背景技术
晶体硅电池技术已成功应用与商业化生产，极大推动了人类享受清洁能源的进程。晶体硅电池的PN 结为其工作的核心，当光照射在该PN 结上时，会发生所谓光生伏打效应，产生光生电动势及光生电流供给与负载。发射电极的设计对于提高晶体硅电池的效率具有重要意义，诸如采用激光辅助、磷墨印刷等形成选择性发射性电极是一种有效设计。
目前行业内普遍采用的是气体携带液态磷源扩散的方法。即将气体通入装有液体的石英源瓶，湿润后携带磷源蒸气通入扩散炉中。
成熟的管式扩散炉，提供的扩散方案是气体携带源气，源气在高温下发生化学反应，继而形成晶体硅电池的核心PN 结。如在P 型硅片上进行磷扩散，一般采用的是氮气携带三氯氧磷带入管式炉管，在高温下三氯氧磷与氧气发生化学反应形成磷原子，该磷原子在高温下先后经历了替代扩散、间隙扩散等在硅片表面形成了具有一定梯度分布的N 型层，继而形成了PN 结。液态的三氯氧磷一般放置于石英材质的源瓶中，其进气管为石英材质的中空管。但是现有的扩散源瓶具有一些缺陷，比如进气管太短，导致每次使用完瓶底都会有很多剩余的三氯氧磷残留在瓶子里面不能充分利用，溶液在扩散源瓶内不够均匀。
发明内容
本发明的目的是提供一种太阳电池用三氯氧磷扩散源瓶，该太阳电池用三氯氧磷扩散源瓶解决了源瓶本体内的源利用不充分和溶液在扩散源瓶内不够均匀的问题。
为了实现上述发明目的，本发明的太阳电池用三氯氧磷扩散源瓶包括恒温槽、衬套、源瓶本体，所述恒温槽内侧表面设有衬套，源瓶本体设置在恒温槽内，所述源瓶本体上方设有进气口、出气口，进气口通过进气管与源瓶本体连接，所述进气管伸入源瓶本体底部，进气管底端连接开有孔洞的环形扩散管，所述出气口通过出气管与源瓶本体连接，进气管上设有气流调节阀，源瓶本体内设有超声波发生器。
所述源瓶本体上设有刻度。
所述环形扩散管直径为源瓶本体截面直径的2/3。
采用这种太阳电池用三氯氧磷扩散源瓶，具有以下优点：
1、由于源瓶本体设置在恒温槽内，这样可以保证源瓶本体在一个固定的温度，当温度固定时，源瓶本体内的蒸汽压就固定，这样当氮气通过源瓶本体时，所带出的磷源量就会基本固定；
2、由于进气口通过进气管与源瓶本体连接，所述进气管伸入源瓶本体底部，这样可以增加源的利用率；
3、由于进气管底端连接开有孔洞的环形扩散管，这样可以进一步提高源的利用率，使溶液在源瓶本体内更加均匀。
4、由于源瓶本体内设有超声波发生器，可以进一步提高溶液在源瓶本体内的均匀性。
附图说明
下面结合附图和具体实施方式对本发明作进一步详细的说明。
图1是本发明太阳电池用三氯氧磷扩散源瓶的结构示意图。
其中有：1. 恒温槽； 2. 衬套；3. 源瓶本体；4. 进气口； 5. 进气管；6. 环形扩散管；7. 出气管；8. 出气口；9. 气流调节阀；10. 超声波发生器。
具体实施方式
图1所示太阳电池用三氯氧磷扩散源瓶，包括恒温槽、衬套、源瓶本体，所述恒温槽内侧表面设有衬套，源瓶本体设置在恒温槽内，所述源瓶本体上方设有进气口、出气口，进气口通过进气管与源瓶本体连接，所述进气管伸入源瓶本体底部，进气管底端连接开有孔洞的环形扩散管，所述出气口通过出气管与源瓶本体连接，进气管上设有气流调节阀，源瓶本体内设有超声波发生器。
所述源瓶本体上设有刻度。
所述环形扩散管直径为源瓶本体截面直径的2/3。
氮气在进气口处进入，通过进气管到达环形扩散管内，然后通过环形扩散管上的孔洞扩散到溶液中去，然后氮气携带三氯氧磷通过出气管从出气口排出。
由于源瓶本体设置在恒温槽内，这样可以保证源瓶本体在一个固定的温度，当温度固定时，源瓶本体内的蒸汽压就固定，这样当氮气通过源瓶本体时，所带出的磷源量就会基本固定；由于进气口通过进气管与源瓶本体连接，所述进气管伸入源瓶本体底部，这样可以增加源的利用率；由于进气管底端连接开有孔洞的环形扩散管，这样可以进一步提高源的利用率，使溶液在源瓶本体内更加均匀。由于源瓶本体内设有超声波发生器，可以进一步提高溶液在源瓶本体内的均匀性。
本申请中没有详细说明的技术特征为现有技术。上述实施例仅例示性说明本申请的原理及其功效，而非用于限制本申请。任何熟悉此技术的人士皆可在不违背本申请的精神及范畴下，对上述实施例进行修饰或改变。因此，所属技术领域中具有通常知识者在未脱离本申请所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本申请的权利要求所涵盖。
Claims (3)
1.一种太阳电池用三氯氧磷扩散源瓶，其特征在于：包括恒温槽、衬套、源瓶本体，所述恒温槽内侧表面设有衬套，源瓶本体设置在恒温槽内，所述源瓶本体上方设有进气口、出气口，进气口通过进气管与源瓶本体连接，所述进气管伸入源瓶本体底部，进气管底端连接开有孔洞的环形扩散管，所述出气口通过出气管与源瓶本体连接，进气管上设有气流调节阀，源瓶本体内设有超声波发生器。
2.按照权利要求1所述的太阳电池用三氯氧磷扩散源瓶，其特征在于：所述源瓶本体上设有刻度。
3.按照权利要求1所述的太阳电池用三氯氧磷扩散源瓶，其特征在于：所述环形扩散管直径为源瓶本体截面直径的2/3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710906791.8A CN107731670A (zh) | 2017-09-29 | 2017-09-29 | 太阳电池用三氯氧磷扩散源瓶 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710906791.8A CN107731670A (zh) | 2017-09-29 | 2017-09-29 | 太阳电池用三氯氧磷扩散源瓶 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107731670A true CN107731670A (zh) | 2018-02-23 |
Family
ID=61209168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710906791.8A Pending CN107731670A (zh) | 2017-09-29 | 2017-09-29 | 太阳电池用三氯氧磷扩散源瓶 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107731670A (zh) |
-
2017
- 2017-09-29 CN CN201710906791.8A patent/CN107731670A/zh active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102820383B (zh) | 多晶硅太阳能电池扩散方法 | |
| CN105073662B (zh) | 用于制造光纤预制体和光纤的方法 | |
| CO5031260A1 (es) | Ensamblaje de deposito de torre para proceso quimico | |
| CN104882516A (zh) | 一种高温低压的硅片扩散方法 | |
| CN108110088A (zh) | 太阳能电池的低压扩散工艺及利用其制备得到的太阳能电池 | |
| CN108417474A (zh) | 晶体硅热氧化工艺、系统及晶体硅太阳能电池热氧化工艺 | |
| CN107731670A (zh) | 太阳电池用三氯氧磷扩散源瓶 | |
| CN107723801A (zh) | 用于太阳电池的三氯氧磷扩散源瓶 | |
| CN201804848U (zh) | 一种用于制造半导体器件的氧化装置 | |
| CN105551948A (zh) | 一种提高太阳电池扩散均匀性的装置及其方法 | |
| CN107754730A (zh) | 一种催化反应器 | |
| CN203871351U (zh) | 一种均匀扩散硼扩散炉反应气的结构 | |
| CN204959086U (zh) | 太阳电池用三氯氧磷扩散源瓶 | |
| CN205223414U (zh) | 一种太阳能电池扩散尾气处理装置 | |
| CN103395858A (zh) | 一种检测水中总有机碳含量的紫外线催化器 | |
| CN202067824U (zh) | 石英源瓶 | |
| CN202030864U (zh) | 用于扩散炉的碳化硅桨 | |
| CN209561441U (zh) | 一种适用于管式扩散工艺中的磷源供给系统 | |
| CN203866406U (zh) | 一种硼扩散炉均匀扩散反应气的挡板结构 | |
| CN105420693B (zh) | 用于mocvd反应器中的加热装置 | |
| CN203787395U (zh) | 一种用于硅热氧反应的供应源装置 | |
| CN107641796A (zh) | 制程设备及化学气相沉积制程 | |
| CN206799795U (zh) | 太阳能生产用三氯氧磷供应装置 | |
| CN209866045U (zh) | 一种薯蓣皂素开环裂解反应罐 | |
| CN205152399U (zh) | 一种扩散炉用石英管 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180223 |
|
| WD01 | Invention patent application deemed withdrawn after publication |