CN107707209A - High-gain broadband millimeter wave difference amplifier - Google Patents
High-gain broadband millimeter wave difference amplifier Download PDFInfo
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- CN107707209A CN107707209A CN201710840612.5A CN201710840612A CN107707209A CN 107707209 A CN107707209 A CN 107707209A CN 201710840612 A CN201710840612 A CN 201710840612A CN 107707209 A CN107707209 A CN 107707209A
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- input
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- matching network
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
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- Power Engineering (AREA)
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Abstract
The invention discloses high-gain broadband millimeter wave difference amplifier, the difference amplifier includes：Input wideband balun, input matching network, level Four difference cascode amplifier, inter-stage matching network, output matching network and output wideband balun, solves the relatively low problem of millimeter wave amplifier gain, solve the technical problem that Conventional wide band amplifiers realize the reduction for causing gain in the form of feedback simultaneously, realize the wide technique effect of millimeter wave difference amplifier high-gain broadband.
Description
Technical field
The present invention relates to millimetre integrated circuit field, in particular it relates to high-gain broadband millimeter wave difference amplifier.
Background technology
As the continuous lifting of communication system channel capacity and transmission rate, the frequency spectrum resource of low frequency operation frequency range are increasingly dilute
Lack, millimeter wave frequency band (30-300GHz) is obtained due to the advantages that its working frequency is high, frequency spectrum resource is abundant, signal transmission quality is high
Industry has been arrived widely to pay close attention to.In order to meet the communication requirement of communication system high-speed, high channel capacity and high s/n ratio, Gao Zeng
The millimeter wave amplifier in beneficial broadband is essential.
After working frequency is higher than 100GHz, working frequency moves closer to the cut-off frequency of transistor, thus single-stage is amplified
The gain of device is restricted, and in order to obtain the millimeter wave amplifier of high-gain, can use the higher new technology of cut-off frequency, but
It is that cost can increase.Conventional wide band amplifiers are realized in the form of feedback more, but can bring the reduction of gain.
The content of the invention
The invention provides high-gain broadband millimeter wave difference amplifier, solves the relatively low difficulty of millimeter wave amplifier gain
Topic, while solve the technical problem that Conventional wide band amplifiers realize the reduction for causing gain in the form of feedback, realize
The wide technique effect of millimeter wave difference amplifier high-gain broadband.
Further, the millimeter wave amplifier in the present invention uses differential configuration, poor compared to the amplifier of single-ended structure
Separation structure has preferably exchange and electromagnetism interference characteristic, preferable to the noise suppressed of surrounding environment, while also can be more preferable
Suppress fluctuation or the noise that supply voltage is brought.
To achieve the above object, it is including defeated this application provides the high-gain broadband millimeter wave difference amplifier of the present invention
Enter wideband balun, input matching network, level Four difference cascode amplifier, inter-stage matching network, output matching network and defeated
Go out wideband balun, its annexation is as follows：
The input connecting signal source of wideband balun is inputted, inputs the output end connection input matching network of wideband balun
Input, the input of the output end connection first order difference cascode amplifier of input matching network, first order difference are total to
The input of the output end connection first order inter-stage matching network of source cathode-input amplifier, the output end of first order inter-stage matching network
Connect the input of second level difference cascode amplifier, the output end connection second of second level difference cascode amplifier
The input of level inter-stage matching network, the output end connection third level difference cascode amplifier of second level inter-stage matching network
Input, third level difference cascode amplifier output end connection third level inter-stage matching network input, the 3rd
The input of the output end connection fourth stage difference cascode amplifier of level inter-stage matching network, fourth stage difference cascode
The input of the output end connection output matching network of amplifier, the output end connection output wideband balun of output matching network
Input, export the output end connection load of wideband balun.
The input wideband balun is that single port inputs, and dual-port output, is inputted as single-ended signal, is exported as difference letter
Number.
The first order difference cascode amplifier, second level difference cascode amplifier, third level difference common source
Cathode-input amplifier, the structure of fourth stage difference cascode amplifier are the same, and each difference cascode amplifier includes the
One transistor Q1, second transistor Q2, third transistor Q3, the 4th transistor Q4, the first inductance Lb1, the second inductance Lb2, institute
The emitter stage for stating the first transistor Q1 and second transistor Q2 links together, and third transistor Q3 emitter stage connection first is brilliant
Body pipe Q1 colelctor electrodes, the 4th transistor Q4 emitter stage connection second transistor Q2 colelctor electrodes, one end of the first inductance Lb1
Connect third transistor Q3 base stage, the second inductance Lb2 one end connects the 4th transistor Q4 base stage, the first inductance Lb1 and
Second inductance Lb2 other end connects；Signal inputs from the first transistor Q1 and second transistor Q2 base stage, from the
Three transistor Q3 and the 4th transistor Q4 colelctor electrode output.
The first transistor Q1, second transistor Q2, third transistor Q3, the 4th transistor Q4 device parameters one
Sample, the first inductance Lb1, the second inductance Lb2 inductance value are the same.The first inductance Lb1, the second inductance Lb2, which are formed, to be increased
Beneficial enhancing structure is gain boosting technologies, realizes the raising of high-frequency gain.
The first order inter-stage matching network, second level inter-stage matching network, third level inter-stage matching network, output matching
Network structure is the same, and each matching network includes the first transmission line TL1, the second transmission line TL2, electric capacity C1, the 3rd transmission
Line TL3；Signal inputs from the first transmission line TL1, then the first transmission line TL1 output and connect the second transmission line TL2 to ground, together
When the first transmission line TL1 output serial capacitance C1, electric capacity C output concatenate the 3rd transmission line TL3, last signal from the 3rd pass
Defeated line TL3 outputs.
The output wideband balun is that dual-port inputs, and single port exports, and inputs as differential signal, exports as single-ended letter
Number；And it is identical with the structure snd size for inputting wideband balun to export wideband balun.
Technical scheme in above-mentioned the embodiment of the present application, at least has the following technical effect that or advantage：
1. high-gain.The present invention uses four-stage amplifier circuit, and every grade of amplifying circuit uses cascade differential configuration, compared
There is higher gain in common source differential configuration, and inductance Lb1, Lb2 realization are introduced in common gate transistor Q3, Q4 base stage
Gain boosting technologies, further lift high-frequency gain.In 120GHz, the amplifier can obtain the gain more than 20dB.
2. wide bandwidth.The present invention uses the T-shaped matching network in follow-on broadband, and the matching network is by three transmission lines and one
Individual electric capacity composition, it is real using the matching network compared to the frequency response that traditional L-type, π type matching networks have broader bandwidth
Existing millimeter wave broadband amplifier, which avoids, introduces the gain reduction that negative feedback structure is brought.
3. high-power supply noise rejection.The present invention uses differential configuration, and laying out pattern is full symmetric, can be good at gram
The fluctuation and noise that clothes are introduced by supply voltage.
Brief description of the drawings
Accompanying drawing described herein is used for providing further understanding the embodiment of the present invention, forms one of the application
Point, do not form the restriction to the embodiment of the present invention；
Fig. 1 is the circuit block diagram of the present invention；
Fig. 2 is the circuit theory diagrams of the difference cascode amplifier of the present invention；
Fig. 3 is the circuit theory diagrams of the inter-stage matching network of the present invention.
Embodiment
The invention provides high-gain broadband millimeter wave difference amplifier, solves the relatively low difficulty of millimeter wave amplifier gain
Topic, while solve the technical problem that Conventional wide band amplifiers realize the reduction for causing gain in the form of feedback, realize
The wide technique effect of millimeter wave difference amplifier high-gain broadband.
It is below in conjunction with the accompanying drawings and specific real in order to be more clearly understood that the above objects, features and advantages of the present invention
Mode is applied the present invention is further described in detail.It should be noted that in the case where not conflicting mutually, the application's
Feature in embodiment and embodiment can be mutually combined.
Many details are elaborated in the following description to facilitate a thorough understanding of the present invention, still, the present invention may be used also
To be implemented using other different from the other modes in the range of being described herein, therefore, protection scope of the present invention is not by under
The limitation of specific embodiment disclosed in face.
As shown in Figure 1-Figure 3, high-gain broadband millimeter wave difference amplifier of the invention, including input wideband balun
Balun1, input matching network MNIN, first order difference cascode amplifier A1, first order inter-stage matching network MN12,
Two level difference cascode amplifier A2, second level inter-stage matching network MN23, third level difference cascode amplifier A3,
Three-level inter-stage matching network MN34, fourth stage difference cascode amplifier A4, output matching network MNOUT, output broadband bar
Human relations Balun2.Signal is converted to differential signal output, inputs wideband balun from input wideband balun Balun1 input input
Balun1 output end connection input matching network MNIN input, input matching MNIN output end connection first order difference
Common source and common grid amplifier A1 input, first order difference cascode amplifier A1 output end connection first order interstage matched
Network MN12 input, first order inter-stage matching network MN12 output end connection second level difference cascode amplifier A2
Input, second level difference cascode amplifier A2 output end connection second level inter-stage matching network MN23 input
End, second level inter-stage matching network MN23 output end connection third level difference cascode amplifier A3 input, the 3rd
Level difference common source and common grid amplifier A3 output end connection third level inter-stage matching network MN34 input, between third level level
Distribution network MN34 output end connection fourth stage difference cascode amplifier A4 input, fourth stage difference cascode are put
Big device A4 output end connection output matching network MNOUT input, output matching network MNOUT output end connection output
Wideband balun Balun2 input, output wideband balun Balun2 output end connection load RL.
Implementation steps are as follows：
Required according to gain, power consumption, noise, P1dB etc., select first order difference cascode amplifier A1, second differential
The in point common source and common grid amplifier A2, third level difference cascode amplifier A3, fourth stage difference cascode amplifier A4
One transistor Q1, second transistor Q2, third transistor Q3, the 4th transistor Q4 device parameters are the same.
According to the first inductance Lb1, the second inductance Lb2 of stability and gain selection same inductance value.
Noise analysis is done to first order difference cascode amplifier A1, determines optimum noise source impedance scope.
Input matching network MNIN is adjusted, to realize that the impedance matching of input and optimum noise match.
Regulation input wideband balun Balun1 size so that the amplitude of input wideband balun Balun1 output difference signals
Degree of unbalancedness and phase unbalance degree are optimal.
Adjust the first transmission line TL1, the second transmission line TL2, the 3rd transmission line TL3 size and electricity in inter-stage matching network
Hold C1 capacitance, to realize preferable impedance matching and wider bandwidth.
Above-mentioned load RL is generally 50 ohm of the input impedance of tester.
The present invention improves the gain of circuit using difference cascode structure and gain boosting technologies；By to general
Logical L-type, π type matching networks are improved, and are proposed the T-shaped matching network in broadband, are obtained wider frequency response；Finally realize
The millimeter wave difference amplifier of high-gain broadband.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know basic creation
Property concept, then can make other change and modification to these embodiments.So appended claims be intended to be construed to include it is excellent
Select embodiment and fall into having altered and changing for the scope of the invention.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (8)
1. high-gain broadband millimeter wave difference amplifier, it is characterised in that the difference amplifier includes：Input wideband balun,
Input matching network, level Four difference cascode amplifier, inter-stage matching network, output matching network and output wideband balun,
Wherein：
The input connecting signal source of wideband balun is inputted, inputs the input of the output end connection input matching network of wideband balun
End, the input of the output end connection first order difference cascode amplifier of input matching network, first order difference common source are total to
The input of the output end connection first order inter-stage matching network of grid amplifier, the output end connection of first order inter-stage matching network
The input of second level difference cascode amplifier, the output end connection second level level of second level difference cascode amplifier
Between matching network input, second level inter-stage matching network output end connection third level difference cascode amplifier it is defeated
Enter end, the input of the output end connection third level inter-stage matching network of third level difference cascode amplifier, third level level
Between matching network output end connection fourth stage difference cascode amplifier input, the fourth stage difference cascode amplification
The input of the output end connection output matching network of device, the input of the output end connection output wideband balun of output matching network
End, export the output end connection load of wideband balun.
2. high-gain broadband millimeter wave difference amplifier according to claim 1, it is characterised in that the input broadband bar
Human relations are single port input, dual-port output, input as single-ended signal, export as differential signal.
3. high-gain broadband millimeter wave difference amplifier according to claim 1, it is characterised in that the first order difference
Common source and common grid amplifier, second level difference cascode amplifier, third level difference cascode amplifier, fourth stage difference are total to
Source cathode-input amplifier structure is identical, and each difference cascode amplifier includes：The first transistor Q1, second transistor
Q2, third transistor Q3, the 4th transistor Q4, the first inductance Lb1, the second inductance Lb2, the emitter stage of the first transistor Q1
Connected with second transistor Q2 emitter stage, third transistor Q3 emitter stage connection the first transistor Q1 colelctor electrodes, the 4th is brilliant
Body pipe Q4 emitter stage connection second transistor Q2 colelctor electrodes, one end connection third transistor Q3's of the first inductance Lb1
Base stage, the second inductance Lb2 one end connect the 4th transistor Q4 base stage, the first inductance Lb1 other end and the second inductance Lb2
Other end connection；Signal inputs from the first transistor Q1 and second transistor Q2 base stage, from third transistor Q3 and the
Four transistor Q4 colelctor electrode output.
4. high-gain broadband millimeter wave difference amplifier according to claim 3, it is characterised in that the first transistor
Q1, second transistor Q2, third transistor Q3, the 4th transistor Q4 device parameters are identical, the first inductance Lb1, second
Inductance Lb2 inductance value is identical.
5. high-gain broadband millimeter wave difference amplifier according to claim 3, it is characterised in that first inductance
Lb1, the second inductance Lb2 form gain suppression structure.
6. high-gain broadband millimeter wave difference amplifier according to claim 1, it is characterised in that between the first order level
Matching network, second level inter-stage matching network, third level inter-stage matching network, output matching network structure are identical, each
Distribution network includes：First transmission line TL1, the second transmission line TL2, electric capacity C1, the 3rd transmission line TL3；Signal transmits from first
Line TL1 is inputted, and the first transmission line TL1 output simultaneously meets the second transmission line TL2 extremely, while the first transmission line TL1 output string
Electric capacity C1 is met, electric capacity C1 output concatenates the 3rd transmission line TL3, and signal exports from the 3rd transmission line TL3.
7. high-gain broadband millimeter wave difference amplifier according to claim 1, it is characterised in that the output broadband bar
Human relations are dual-port input, single port output, input as differential signal, export as single-ended signal.
8. high-gain broadband millimeter wave difference amplifier according to claim 7, it is characterised in that output wideband balun with
Input the structure snd size all same of wideband balun.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710840612.5A CN107707209A (en) | 2017-09-18 | 2017-09-18 | High-gain broadband millimeter wave difference amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710840612.5A CN107707209A (en) | 2017-09-18 | 2017-09-18 | High-gain broadband millimeter wave difference amplifier |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107707209A true CN107707209A (en) | 2018-02-16 |
Family
ID=61172843
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710840612.5A Withdrawn CN107707209A (en) | 2017-09-18 | 2017-09-18 | High-gain broadband millimeter wave difference amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107707209A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021135408A1 (en) * | 2019-12-31 | 2021-07-08 | 南京米乐为微电子科技有限公司 | Ultra-wideband microwave and millimeter wave differential power amplifier |
| CN113726299A (en) * | 2021-11-03 | 2021-11-30 | 成都明夷电子科技有限公司 | Four-stage differential cascode noise amplifier based on SiGe-BiCMOS (silicon germanium-bipolar complementary metal oxide semiconductor) process |
| CN117639683A (en) * | 2024-01-26 | 2024-03-01 | 成都嘉纳海威科技有限责任公司 | Balun-based high-OIP 2 balance amplifier |
-
2017
- 2017-09-18 CN CN201710840612.5A patent/CN107707209A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021135408A1 (en) * | 2019-12-31 | 2021-07-08 | 南京米乐为微电子科技有限公司 | Ultra-wideband microwave and millimeter wave differential power amplifier |
| CN113726299A (en) * | 2021-11-03 | 2021-11-30 | 成都明夷电子科技有限公司 | Four-stage differential cascode noise amplifier based on SiGe-BiCMOS (silicon germanium-bipolar complementary metal oxide semiconductor) process |
| CN117639683A (en) * | 2024-01-26 | 2024-03-01 | 成都嘉纳海威科技有限责任公司 | Balun-based high-OIP 2 balance amplifier |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180216 |
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| WW01 | Invention patent application withdrawn after publication |