CN107706740A - A kind of method that the non-implanted uptake zone of InP-base SLD electric currents is made using electrochemical corrosion technology - Google Patents

A kind of method that the non-implanted uptake zone of InP-base SLD electric currents is made using electrochemical corrosion technology Download PDF

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Publication number
CN107706740A
CN107706740A CN201710902588.3A CN201710902588A CN107706740A CN 107706740 A CN107706740 A CN 107706740A CN 201710902588 A CN201710902588 A CN 201710902588A CN 107706740 A CN107706740 A CN 107706740A
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China
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inp
sld
base
implanted
electric currents
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Inventor
张晶
祝子翔
乔忠良
高欣
薄报学
李辉
王宪涛
魏志鹏
马晓辉
孙春明
陈锋
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Changchun University of Science and Technology
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Changchun University of Science and Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)

Abstract

A kind of method using the non-implanted uptake zone of electrochemical corrosion fabrication techniques InP-base SLD electric currents.It is known that device failure is easily caused to make bombardment effect unobvious, unstable or too strong bombard that the non-implanted uptake zone weak point of SLD electric currents was small measurement using traditional proton bombardment method.Traditional proton bombardment method is too high to proton bombardment technological requirement to make SLD electric currents non-injection regions, and the yield rate of device is too low.The present invention is a kind of method using the non-implanted uptake zone of electrochemical corrosion fabrication techniques InP-base SLD electric currents, device overall structure is made up of ridge table top and deep nanometer hole uptake zone, deep nanometer hole uptake zone is made in non-outgoing end to reach the purpose for suppressing F P and vibrating, uptake zone is made by techniques such as electrochemical corrosion, the making of the uptake zone is not required excessively corrosion depth and corrosion shape, it is only necessary to good optical absorption is can reach through whole epitaxial layer.

Description

One kind makes the non-implanted uptake zone of InP-base SLD electric currents using electrochemical corrosion technology Method
Technical field
The invention belongs to SLD (SuperLuminescentDiode, super-radiance light emitting diode) field, and in particular to arrive A kind of method that the non-implanted uptake zone of InP-base SLD electric currents is made using electrochemical corrosion technology.
Background technology
SLD is a kind of semiconductor light source of characteristics of luminescence between laser (LD) and light emitting diode (LED), it Occur and develop completely by optical fibre gyro (IFOG) driving, and turn into a kind of important light source.We are the spontaneous of amplification Transmitting is referred to as superradiance, is a kind of directed radiation phenomenon of the gain media under strong excited state.When exciting in gain media When density is sufficiently high, the carrier in gain media is excited by spontaneous emission photon, avenges the photon numbers of stimulated emission Formula multiplication is collapsed, luminous intensity sharply increases to superlinearity therewith, and spectral width is narrowed, and is accounted for by initial spontaneous emission leading Developing into based on the spontaneous emission with amplification quickly, the one way amplification of spontaneous emission light.Compared with laser, superradiance just one Kind polyenergetic and incoherent or short relevant light.
Traditional fabrication SLD electric currents non-implanted uptake zone generally use proton bombardment methods makes, and its production effect is failed to understand Aobvious, main cause was a small amount of proton bombardment DeGrains or unstable, and excessively substantial amounts of proton bombardment can make to device Into damage.A kind of advantage using the non-implanted uptake zone of electrochemical corrosion fabrication techniques InP-base SLD electric currents is uptake zone to corrosion Depth and corrosion shape do not have excessive requirement, only need guiding through whole epitaxial layer can and reach good optical absorption, then Reach the light generation effect between Cavity surface, device before and after Fabry-Perot-type (Fabry-Perot, the F-P) type of destruction and keep spontaneous spoke Penetrate.Preparation method of the present invention is simple, mature technology, suppresses the features such as reliable and stable to device lasing, and InP-base material has The advantage that GaAs sills do not have.
The shortcomings that uptake zone non-implanted for traditional fabrication SLD electric currents of the invention, it is proposed that one kind uses electrochemical corrosion The method of the non-implanted uptake zone of fabrication techniques InP-base SLD electric currents.
The content of the invention
It is an object of the present invention to the side of the non-implanted uptake zone of InP-base SLD electric currents is made using electrochemical corrosion technology Method, in the invention, 1550nmSLD are prepared using InP-base epitaxial material, the electrochemical corrosion technical matters of InP-base material It is very ripe, and preparation method is simple, GaAs sills do not possess these advantages at present；The present invention is entered using electrochemical etching method The autonomous unordered corrosion of row makes the non-implanted uptake zone of InP-base SLD device currents, during actual process, after electrochemical corrosion SiO is deposited2To make medium protective layer.
Brief description of the drawings
Schematic diagram 1 is to use the non-implanted uptake zone laser structure of electrochemical corrosion fabrication techniques InP-base SLD electric currents；Its In each digitized representation implication：1 is the non-implanted uptake zone of electric current；2 be ridged table top；3 be upper limiting layer；4 be upper ducting layer；5 For active layer；6 be lower waveguide layer；7 be lower limit layer；8 be substrate.
Embodiment
It is an object of the invention to provide a kind of porous non-implanted uptake zone of InP-base SLD electric currents, using InP materials Electrochemical corrosive process technology, by adjusting reaction temperature, the reaction time controls aperture and depth.
In order to achieve the above object, the present invention adopts the following technical scheme that：
A kind of preparation method of porous material, comprises the following steps：
1) under being catalyzed, InP and HCl：C2H6O2：H2O at 30-50 DEG C, for example, 30 DEG C, 33 DEG C, 47 DEG C, 42 DEG C, 45 DEG C, 48 DEG C of heating responses, and control InP incomplete reactions；
Under catalysis, InP and NaCl：C2H6O2：H2O at 50-70 DEG C, for example, 50 DEG C, 53 DEG C, 56 DEG C, 59 DEG C, 63 DEG C, 69 DEG C heating response, and control InP incomplete reactions；
Under catalysis, InP and NaBr：C2H6O2：H2O at 40-65 DEG C, for example, 40 DEG C, 45 DEG C, 50 DEG C, 55 DEG C, 60 DEG C, 65 DEG C heating response, and control InP incomplete reactions.
Reaction temperature of the invention by controlling InP materials and corrosive liquid, reaction rate can be accelerated, shorten the reaction time, And make porous InP materials hole number it is intensive, be evenly distributed, so that it actual obtains more preferable effect in.
The preparation method of the InP materials used as optimal technical solution, the present invention, the step 1) heating-up temperature are 30-40℃。
2) after going the removal of impurity and separating unreacted InP, InP-base SLD porous absorbents area is obtained；
Wherein 200mlHCl：C2H6O2：H2O=1.0：0.5：10
Wherein 200mlNaCl：C2H6O2：H2O=1.0：1.0：10
Wherein 200mlNaBr：C2H6O2：H2O=2.0：1.0：10
Preferably, step 1) the heating response time is 30-120s, for example, 30s, 50s, 70s, 90s, 110s, 120s etc., the step 2) electrolytic cell voltage are
Wherein 200mlHCl：C2H6O2：H2O electrolytic cell voltages are 7-11V；
Wherein 200mlNaCl：C2H6O2：H2O electrolytic cell voltages are 6-10V；
Wherein 200mlNaBr：C2H6O2：H2O electrolytic cell voltages are 5-9V；
It is an object of the invention to provide a kind of described process to make InP-base SLD uptake zones, and uptake zone is either Surface or section need not all reach extraordinary corrosive effect, little with corrosion pore size correlation, and corrosion hole runs through Whole epitaxial layer, hole are generally 5-10um or so deeply.
3) the non-implanted uptake zone structural manufacturing process step of electrochemical corrosion fabrication techniques InP-base SLD electric currents is used；
(1) photoetching：
Cleaning：Toluene-acetone-alcohol-deionized water-nitrogen drying.
Whirl coating：After nitrogen dries up, be immediately placed into photoresist spinner preliminary operation, constant speed, gluing, whirl coating, take piece, shutdown.
Front baking：Front baking must be carried out after glue to experiment slice by having got rid of, solidified glue film, make to contact between glue and experiment slice more firm Gu.
Photoetching：Photoetching is carried out, region shown in 1 and 2 is photo-etched glue protection, wherein a length of 500- in region 2 in schematic diagram 1500um。
(2) etch：
Carry out conventional dry etching technics on InP-base SLD epitaxial wafers to remove part upper limiting layer, in figure shown in 1 and 2 Region is photo-etched glue protection, and the etching depth for not being photo-etched glue protection is 700-1200nm.
(3) medium film preparation：
0.1-0.4um thickness is sputtered on the InP-base SLD epitaxial wafers for entirely do litho pattern using magnetron sputtering method in experiment SiO2Dielectric insulating film.
(4) lift-off techniques：
To the SiO in 1 and 2 region surface on laser epitaxial piece2Insulating barrier does lift-off techniques, removes 1 and 2 The photoresist and SiO on surface2, ultrasound, deionized water cleaning, nitrogen drying in ultrasound, alcoholic solution in acetone soln successively.
(5) alignment：
The step of iterative process (1), alignment is carried out using designed good photolithography plate, region 1 appears, and other parts are by light Photoresist covers.
(6) electrochemical corrosion：
Electrochemical corrosion is carried out to region 1, hole size is suitable, and hole size is 10nm-500nm corrosion depth 5-10um, carves Erosion depth passes through active layer ducting layer, and epitaxial wafer is thoroughly cleaned.
(7) medium film preparation：
The step of iterative process (3), the thick SiO of 0.1-0.4um are sputtered using magnetron sputtering method2Dielectric insulating film.
(8) lift-off techniques：
The step of iterative process (4), remove region 1 with the photoresist and SiO of exterior domain2。
Compared with the prior art, the present invention is beneficial is embodied in：
1st, it is to have preferable light to inhale using the advantage of the non-implanted uptake zone of electrochemical corrosion fabrication techniques InP-base SLD electric currents Produce effects and fruit and device is not damaged, uptake zone does not have excessive requirement to corrosion depth and corrosion shape, need to only run through whole Epitaxial layer；
2nd, the electrochemical corrosion technical matters of InP-base material is very ripe, and preparation method is simple, pollution-free, scale metaplasia The advantages that production.

Claims (3)

  1. A kind of 1. method using the non-implanted uptake zone of electrochemical corrosion fabrication techniques InP-base SLD electric currents, it is characterised in that its Including having the following steps：
    1) it is directed to shown in Fig. 1, using the non-implanted uptake zones of InP-base SLD electric currents shown in electrochemical corrosion fabrication techniques 1；
    2) on the basis of InP-base tradition SLD epitaxial wafers, whole experiment is carried out in an electrolytic cell equipped with electrolyte.
  2. 2. absorb plot structure and system using electrochemical corrosion fabrication techniques InP-base SLD electric currents are non-implanted as claimed in claim 1 Make method, it is characterised in that in the step 1), preparing the absorption region shown in 1, device is a three-electrode system, sample Product are working electrode, and platinized platinum is used as to electrode；Under voltage conditions, electric field is moved hole is limited and is only capable of along specific direction Reach bottom.
  3. 3. absorb plot structure and system using electrochemical corrosion fabrication techniques InP-base SLD electric currents are non-implanted as claimed in claim 1 Make method, wherein, InP and HCl：C2H6O2：H2O=1.0：0.5：10 at 30-48 DEG C, for example, 30 DEG C, 33 DEG C, 47 DEG C, 42 DEG C, 45 DEG C, 48 DEG C of heating responses, and control InP incomplete reactions；
    InP and NaCl：C2H6O2：H2O=1.0：1.0：10 at 50-69 DEG C, for example, 50 DEG C, 53 DEG C, 56 DEG C, 59 DEG C, 63 DEG C, 69 DEG C heating response, and control InP incomplete reactions；
    InP and NaBr：C2H6O2：H2O=2.0：1.0：10 at 40-65 DEG C, for example, 40 DEG C, 45 DEG C, 50 DEG C, 55 DEG C, 60 DEG C, 65 DEG C heating response, and control InP incomplete reactions.
    Wherein 200ml HCl：C2H6O2：H2O=1.0：0.5：10, electrolytic cell voltage 7-11V；
    Wherein 200ml NaCl：C2H6O2：H2O=1.0：1.0：10, electrolytic cell voltage 6-10V；
    Wherein 200ml NaBr：C2H6O2：H2O=2.0：1.0：10, electrolytic cell voltage 5-9V；
    After going the removal of impurity and separating unreacted InP, InP-base SLD porous absorbents area is obtained.
CN201710902588.3A 2017-09-29 2017-09-29 A kind of method that the non-implanted uptake zone of InP-base SLD electric currents is made using electrochemical corrosion technology Pending CN107706740A (en)

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Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU933826A1 (en) * 1980-06-20 1982-06-07 Всесоюзный научно-исследовательский, проектно-конструкторский и технологический институт низковольтного аппаратостроения Method of etching workpieces made of copper-containing alloys
CN1068682A (en) * 1992-05-19 1993-02-03 吉林大学 Super-radiant luminotron of dip absorb area type
US5824206A (en) * 1996-06-28 1998-10-20 The United States Of America As Represented By The Secretary Of The Air Force Photoelectrochemical etching of p-InP
CN1450695A (en) * 2003-04-25 2003-10-22 吉林大学 Quantum well mixing ultraradiation luminous pipe and making method thereof
CN1549354A (en) * 2003-05-23 2004-11-24 武汉光迅科技有限责任公司 Method for producing wide-spectral band wide super-radiation light-emitting diode and diode thereof
CN1713357A (en) * 2004-06-21 2005-12-28 中国科学院半导体研究所 Chemical battery with porous indium phosphide, electrochemical corrosive system and method
CN101728249A (en) * 2009-11-20 2010-06-09 清华大学 Method for preparing single crystal transition layer of epitaxial compound semiconductor material on silicon chip
CN102134737A (en) * 2011-04-28 2011-07-27 上海理工大学 Method for preparing porous silicon
CN102598314A (en) * 2009-11-03 2012-07-18 加利福尼亚大学董事会 Superluminescent diodes by crystallographic etching
CN102889848A (en) * 2011-07-22 2013-01-23 宝山钢铁股份有限公司 Electrochemical quantitative characterization method of nanoscale oxide film
CN102938381A (en) * 2012-07-12 2013-02-20 长春理工大学 Preparation method for three-dimensional nano-porous indium phosphide (InP) array structure material
CN103087710A (en) * 2013-01-30 2013-05-08 昆明理工大学 Preparation method of porous silicon base CdS quantum dot composite material
US20140076738A1 (en) * 2012-09-14 2014-03-20 International Business Machines Corporation Electrochemical etching apparatus
CN107190309A (en) * 2017-05-22 2017-09-22 深圳市步莱恩科技有限公司 A kind of method in stainless steel surfaces formation micro-nano hole

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU933826A1 (en) * 1980-06-20 1982-06-07 Всесоюзный научно-исследовательский, проектно-конструкторский и технологический институт низковольтного аппаратостроения Method of etching workpieces made of copper-containing alloys
CN1068682A (en) * 1992-05-19 1993-02-03 吉林大学 Super-radiant luminotron of dip absorb area type
US5824206A (en) * 1996-06-28 1998-10-20 The United States Of America As Represented By The Secretary Of The Air Force Photoelectrochemical etching of p-InP
CN1450695A (en) * 2003-04-25 2003-10-22 吉林大学 Quantum well mixing ultraradiation luminous pipe and making method thereof
CN1549354A (en) * 2003-05-23 2004-11-24 武汉光迅科技有限责任公司 Method for producing wide-spectral band wide super-radiation light-emitting diode and diode thereof
CN1713357A (en) * 2004-06-21 2005-12-28 中国科学院半导体研究所 Chemical battery with porous indium phosphide, electrochemical corrosive system and method
CN102598314A (en) * 2009-11-03 2012-07-18 加利福尼亚大学董事会 Superluminescent diodes by crystallographic etching
CN101728249A (en) * 2009-11-20 2010-06-09 清华大学 Method for preparing single crystal transition layer of epitaxial compound semiconductor material on silicon chip
CN102134737A (en) * 2011-04-28 2011-07-27 上海理工大学 Method for preparing porous silicon
CN102889848A (en) * 2011-07-22 2013-01-23 宝山钢铁股份有限公司 Electrochemical quantitative characterization method of nanoscale oxide film
CN102938381A (en) * 2012-07-12 2013-02-20 长春理工大学 Preparation method for three-dimensional nano-porous indium phosphide (InP) array structure material
US20140076738A1 (en) * 2012-09-14 2014-03-20 International Business Machines Corporation Electrochemical etching apparatus
CN103087710A (en) * 2013-01-30 2013-05-08 昆明理工大学 Preparation method of porous silicon base CdS quantum dot composite material
CN107190309A (en) * 2017-05-22 2017-09-22 深圳市步莱恩科技有限公司 A kind of method in stainless steel surfaces formation micro-nano hole

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ZHANKUN WENG ET AL.: "Anodic etching of InP using neutral NaCl electrolyte", 《JOURNAL OF POROUS MATERIALS》 *

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