CN1450695A - Quantum well mixing ultraradiation luminous pipe and making method thereof - Google Patents
Quantum well mixing ultraradiation luminous pipe and making method thereof Download PDFInfo
- Publication number
- CN1450695A CN1450695A CN 03111555 CN03111555A CN1450695A CN 1450695 A CN1450695 A CN 1450695A CN 03111555 CN03111555 CN 03111555 CN 03111555 A CN03111555 A CN 03111555A CN 1450695 A CN1450695 A CN 1450695A
- Authority
- CN
- China
- Prior art keywords
- quantum well
- inp
- ingaasp
- layer
- silicon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Abstract
This invention relates to a superradiation luminous device and its process method includes a lower electrode, n-Inp substrate, n-Inp buffer layer, n-In GaAsP SCH separate, InGaAsP multiple quantum well active layer, p-In GaAsP SCH separate, p-InP cover, P-InGaAs cover, SiO2 current isolatio layer and upper electrode, the InGaAsP multiple quantum well active layer constitutes a quantum well mixed region and a not mixed region, which can be two regions or alternate multiple regions structure. The upper electrode can be separated to form two pump regions. By adjusting the rate of length of mixed and unmixed regions of the two quantum wells or applying electric pump to them the luminous spectrum of the device can be smooth.
Description
Technical field
The present invention relates to a kind of light emitting semiconductor device and preparation method thereof, particularly relate to a kind of superradiation light-emitting device of quantum well hybrid technology making and manufacture method of this luminescent device used.
Background technology
Superradiance only propagated to have experienced in gain media by the photon of spontaneous emission and is excited amplification process and obtains, and we call superradiance to the spontaneous emission of having amplified.The semiconductor super-radiation light source because have that wide spectrum, high power, coherence length are short, low noise and less characteristics such as the angle of divergence in a lot of fields as: fields such as optic fiber gyroscope (FOG), optical time domain reflectometer (OTDR), Local Area Network, Optical Coherence Tomography Imaging Technology, optical wavelength-division multiplex (WDM) system, optical information processing technology have obtained using widely.The spectrum width of the output spectrum of superradiance light source is wide more, and its coherence length is just short more, and the performance of application system is got a greater increase.In addition along with the development of " spectrum is cut apart " technology in the optical wavelength-division multiplex field, the wide spectrum light source performance requirement is also improved constantly, when promptly its power index being had higher requirements, wish that also its spectral width is wide more good more, provide more transmission channel to cover bigger spectral region.For this reason, improve spectral width and become one of target of superradiance device research.
The quantum well hybrid technology is a kind of method that changes the semi-conducting material energy gap after the crystal growth, has silicon dioxide to cover usually to strengthen annealing and ion to inject and strengthens the two kinds of methods of annealing.Mix by carrying out quantum well, can make the material counterdiffusion mutually of trap and base in the quantum-well materials to form new semiconductor mixtures in the selected zone of material, and as also changes thereupon such as the energy gap of the Spectrum of Semiconductor Quantum Wells of active layer, refractive indexes.Like this, can be so that once the zones of different of epitaxially grown Spectrum of Semiconductor Quantum Wells has different characteristics.This technology all is very useful for photonic integrated device and integrated optoelectronic device, integrated device as semiconductor laser and detector or electrooptic modulator, only need an epitaxial growth just can finish the material growth of integrated device, and being carried out quantum well, the zones of different of laser, detector or electrooptic modulator mixes, to obtain material behaviors such as required energy gap of device separately and refractive index.Thereby can simplify the manufacturing process of device, improve the reliability of device.
The existing super radiation light emitting tube of long wavelength semiconductor preferably mainly is made of following several parts from bottom to top: bottom electrode, n-InP substrate, n-InP resilient coating, n-InGaAsP be limiting layer, InGaAsP multiple quantum well active layer, p-InGaAsP difference limiting layer, p-InP cap rock, p-InGaAs cap rock, SiO respectively
2Current isolating layer, top electrode.In order to increase the luminescent spectrum width of device, main method is the structure that changes the InGaAsP multiple quantum well active layer at present, as: different luminescence center wavelength active layers superpose, the various different centre wavelength active layers of cascade, select the quantum well active area of regional epitaxy technology growth progressive thickness, adopt the wide double quantum well structure of different traps etc., these methods all make the epitaxy technique of grown quantum trap active layer increase difficulty.
Summary of the invention
The objective of the invention is to utilize the quantum well hybrid technology to make the active layer of superradiation light-emitting device, thereby a kind of preparation method of super radiation light emitting tube and this luminous tube that manufacture craft obtains simplifying of wide spectrum is provided.
The designed quantum well of the present invention is mixed the structure of super radiation light emitting tube and is seen accompanying drawing 1 and Fig. 2, by bottom electrode 1, n-InP substrate 2, n-InP resilient coating 3, n-InGaAsP difference limiting layer 4, InGaAsP multiple quantum well active layer 5, p-InGaAsP difference limiting layer 6, p-InP cap rock 7, p-InGaAs cap rock 8, SiO
2Current isolating layer 9, top electrode 10 constitute, and are characterized in that InGaAsP multiple quantum well active layer 5 is made of quantum well Mixed Zone 11 and non-mixed region 12 two parts, and active layer can be that the two-regions type structure also can be an alternate multiple regions structure.
The method that the present invention mixes by quantum well is mixed the part generation quantum well of InGaAsP multiple quantum well active layer 5, and another part does not allow its mixing.Quantum well is mixed the luminous centre wavelength of back active layer can be to the drift of short wavelength's direction, and the process conditions that the size of drift is mixed according to quantum well are different and different.Like this, when the superradiance device is worked, active layer is to be worked simultaneously by the zone of the two kinds of luminescence center wavelength in quantum well mixed zone and non-mixed zone, the common super radiation light emitting tube that is the equal of two different centre wavelengths is worked simultaneously, so the luminous spectrum width of this device can be wide more a lot of than existing common super radiation light emitting tube.By the quantum well Mixed Zone of adjustment device InGaAsP multiple quantum well active layer 5 and the length ratio of non-mixed region, perhaps by adopting two electrodes respectively the electric pump Pu to be carried out in two zones, can be so that the luminous spectrum of device be comparatively smooth.
Our result of the test has also proved the effect of this invention, Fig. 5 mixes the spectrum comparison diagram of super radiation light emitting tube and common super radiation light emitting tube for quantum well, wherein Fig. 5 (a) is the spectrum of common super radiation light emitting tube, and Fig. 5 (b) mixes super radiation light emitting tube spectrum for quantum well.From spectral line shown in the figure as can be seen, the spectrum halfwidth of common super radiation light emitting tube is only about 25nm, and quantum well is mixed super radiation light emitting tube spectrum halfwidth and is increased to more than the 40nm.
Description of drawings
Fig. 1: quantum well is mixed the super radiation light emitting tube end view drawing;
Fig. 2: the two-regions type quantum well is mixed the super radiation light emitting tube vertical view;
Fig. 3: multi-zone quantum well is mixed the super radiation light emitting tube vertical view;
Fig. 4: the super radiation light emitting tube vertical view is mixed in two districts pumping formula quantum well respectively;
Fig. 5 (a): the spectrogram of common super radiation light emitting tube;
Fig. 5 (b): the two-regions type quantum well is mixed the super radiation light emitting tube spectrogram.
Among Fig. 1: each several part is that bottom electrode 1, n-InP substrate 2, n-InP resilient coating 3, n-InGaAsP be limiting layer 4, InGaAsP multiple quantum well active layer 5, p-InGaAsP difference limiting layer 6, p-InP cap rock 7, p-InGaAs cap rock 8, SiO respectively
2Current isolating layer 9, top electrode 10.
Among Fig. 2, Fig. 3 and Fig. 4: 11 is the quantum well mixed zone, and 12 is the non-mixed zone of quantum well, and 13 is the electricity injection window of device; Parts 14 are the electrode isolation bar district in the middle of two pumping areas among Fig. 4.
Embodiment
Embodiment 1: silicon dioxide covers and strengthens annealing type quantum well mixing super radiation light emitting tube
This superradiation light-emitting tubular construction as depicted in figs. 1 and 2.Manufacture craft is summarized as follows: select for use n-InP as substrate 2, on InP substrate 2 with organometallic chemistry vapour phase epitaxy (MOVPE) method n-InP resilient coating 3, n-InGaAsP limiting layer 4, InGaAsP multiple quantum well active layer 5, p-InGaAsP limiting layer 6, p-InP cap rock 7, the p-InGaAs cap rock 8 respectively respectively of growing in turn.Use plasma enhanced chemical vapor deposition methods such as (PECVD) need carry out at epitaxial wafer covering the thick silicon dioxide of the about 200nm of one deck on the zone of quantum well mixing then; under the situation of nitrogen protection, carry out 30 seconds annealing at 700 degree then with alloying furnace.By the quantum well hybrid technology, in the zone that silicon dioxide covers, InGaAsP multiple quantum well layer 5 has just formed the quantum well mixing.After annealing was finished, the method with chemical corrosion washed the silicon dioxide etching on epitaxial wafer surface.Again with methods such as PECVD at epitaxial wafer superficial growth layer of silicon dioxide electricity isolated layer 9, be used for electricity and isolate.Afterwards with the method for photoetching and chemical corrosion the eroding of the silicon dioxide of selection area, form electricity and inject window 13.Then at epitaxial wafer upper surface sputter one deck Ti-Pt-Au as top electrode 10.Last attenuate steams the annealing of bottom electrode 1 and alloy.When selecting regional silicon dioxide capping annealing, suitable adjustment has the length ratio of silicon dioxide and no silicon dioxide overlay area, can make that the luminous spectrum of device is comparatively smooth, the zone that has silicon dioxide and no silicon dioxide to cover, being that quantum well mixed zone and non-quantum well mixed zone can be two-regions types as shown in Figure 2, also can be alternate multiple regions structure as shown in Figure 3.
Embodiment 2: silicon dioxide covers and strengthens annealing two districts pumping formula quantum well mixing super radiation light emitting tube respectively
This device architecture as shown in Figure 4, technical process is the same with silicon dioxide covering increase annealing type quantum well mixing super radiation light emitting tube, difference was before sputter top electrode 10, earlier do the photoetching adhesive tape of wide 20～100 μ m, sputter top electrode then at the intersection of quantum well mixed zone and non-quantum well Mixed Zone with the method for photoetching.Stripping technology (Lift-off) method this photoetching adhesive tape is removed with photoresist again forms that quantum well is mixed and non-quantum well is mixed electrode isolation bar district 14 in the middle of two pumping areas, and top electrode is separated.Attenuate, evaporation bottom electrode 1 and alloy annealing more afterwards.The flatness that so just can lean on the different injection current in two districts to regulate luminescent spectrum.
Embodiment 3: ion injects and strengthens annealing type quantum well mixing super radiation light emitting tube
The technical process of this device is behind the InGaAsP multiple quantum well layer 5 of having grown, the thick eigen I nP of growth one deck 0.5～2 μ m, method with photoetching covers the thick photoresist of thick 2～6 μ m of last layer in the zone that does not need to carry out the quantum well mixing then, carries out ion then and injects.After the injection, photoresist is removed annealing then (annealing time is identical substantially with embodiment 1).Because the injection and the annealing of ion, the zone that makes the InGaAsP multiple quantum well layer not cover photoresist form quantum well and mixes, all the other zones that cover photoresist do not form the quantum well mixing.Afterwards the eigen I nP layer of top layer is removed with the method for chemical corrosion, and then grow p-InGaAsP limiting layer 6, p-InP cap rock 7, p-InGaAs cap rock 8 respectively, the preparation of epitaxial wafer finished.Use PECVD method growthing silica electricity isolated layer 9 again on epitaxial wafer, photoetching corrosion goes out electricity and injects window 13, follows sputter top electrode 10, attenuate, also alloy annealing of evaporation bottom electrode 1.
Claims (6)
1, a kind of semiconductor super-radiation light emitting pipe is in turn by bottom electrode (1), n-InP substrate (2), n-InP resilient coating (3), n-InGaAsP difference limiting layer (4), InGaAsP multiple quantum well active layer (5), p-InGaAsP difference limiting layer (6), p-InP cap rock (7), p-InGaAs cap rock (8), SiO
2Current isolating layer (9), top electrode (10) constitute, and it is characterized in that: InGaAsP multiple quantum well active layer (5) is made of quantum well Mixed Zone (11) and non-quantum well Mixed Zone (12) two parts.
2, semiconductor super-radiation light emitting pipe as claimed in claim 1, it is characterized in that: the top electrode (10) of quantum well mixed zone (11) and non-quantum well mixed zone (12) separates, form two pumping areas with bottom electrode (1), there is electrode isolation bar district (14) centre.
3, semiconductor super-radiation light emitting pipe as claimed in claim 1 is characterized in that: quantum well Mixed Zone (11) and non-quantum well Mixed Zone (12) can be that the two-regions type structure also can be an alternate multiple regions structure.
4, a kind of method for preparing claim 1 or 3 described semiconductor super-radiation light emitting pipes the steps include:
A, select for use n-InP, epitaxial growth n-InP resilient coating (3), n-InGaAsP limiting layer (4), InGaAsP multiple quantum well active layer (5), p-InGaAsP limiting layer (6), p-InP cap rock (7), p-InGaAs cap rock (8) respectively respectively in turn on InP substrate (2) as substrate (2);
B, on epitaxial wafer need carry out zone that quantum well mixes, cover the thick silicon dioxide of the about 200nm of one deck, under the situation of nitrogen protection, carry out 30 seconds annealing then at 700 degree, anneal finish after, the silicon dioxide etching on epitaxial wafer surface is washed;
C, in the long layer of silicon dioxide (9) of epitaxial wafer surface regeneration, then the silicon dioxide etching of selection area is fallen to form electricity and injects window (13);
D, at last at epitaxial wafer upper surface sputter one deck Ti-Pt-Au as top electrode (10), attenuate steams the annealing of bottom electrode (1) and alloy.
5, a kind of method for preparing the described semiconductor super-radiation light emitting pipe of claim 2 the steps include:
A, select for use n-InP, epitaxial growth n-InP resilient coating (3), n-InGaAsP limiting layer (4), InGaAsP multiple quantum well active layer (5), p-InGaAsP limiting layer (6), p-InP cap rock (7), p-InGaAs cap rock (8) respectively respectively in turn on InP substrate (2) as substrate (2);
B, on epitaxial wafer need carry out zone that quantum well mixes, cover the thick silicon dioxide of the about 200nm of one deck, under the situation of nitrogen protection, carry out 30 seconds annealing then at 700 degree, anneal finish after, the silicon dioxide etching on epitaxial wafer surface is washed;
C, in the long layer of silicon dioxide (9) of epitaxial wafer surface regeneration, then the silicon dioxide etching of selection area is fallen to form electricity and injects window (13);
D, do the wide electric isolating bar (14) of 20～100 μ m at the intersection of quantum well mixed zone and non-quantum well Mixed Zone, and then sputter top electrode, attenuate, evaporation bottom electrode (1) and alloy annealing afterwards.
6, a kind of method for preparing claim 1 or 3 described semiconductor super-radiation light emitting pipes the steps include:
A, select for use n-InP, epitaxial growth n-InP resilient coating (3), n-InGaAsP limiting layer (4), InGaAsP multiple quantum well active layer (5) respectively in turn on InP substrate (2) as substrate (2);
The eigen I nP of b, a bed thickness 0.5～2 μ m that on active layer, grows, do not needing to carry out the photoresist that zone that quantum well mixes covers thick 2～6 μ m of last layer, carrying out ion injects, injecting the back removes photoresist, anneal then about 30 seconds, afterwards eigen I nP layer is removed with the method for chemical corrosion;
C, grow in turn p-InGaAsP respectively limiting layer (6), p-InP cap rock (7), p-InGaAs cap rock (8) again;
D, in the long layer of silicon dioxide (9) of epitaxial wafer surface regeneration, then the silicon dioxide etching of selection area is fallen to form electricity and injects window (13);
E, at last at epitaxial wafer upper surface sputter one deck Ti-Pt-Au as top electrode (10), attenuate steams the annealing of bottom electrode (1) and alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03111555 CN1450695A (en) | 2003-04-25 | 2003-04-25 | Quantum well mixing ultraradiation luminous pipe and making method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 03111555 CN1450695A (en) | 2003-04-25 | 2003-04-25 | Quantum well mixing ultraradiation luminous pipe and making method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1450695A true CN1450695A (en) | 2003-10-22 |
Family
ID=28683964
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 03111555 Pending CN1450695A (en) | 2003-04-25 | 2003-04-25 | Quantum well mixing ultraradiation luminous pipe and making method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1450695A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242056A (en) * | 2014-10-10 | 2014-12-24 | 中国电子科技集团公司第四十四研究所 | Ridge waveguide chip structure capable of improving electrical isolation capability and production method of ridge waveguide chip structure |
| CN107706740A (en) * | 2017-09-29 | 2018-02-16 | 长春理工大学 | A kind of method that the non-implanted uptake zone of InP-base SLD electric currents is made using electrochemical corrosion technology |
-
2003
- 2003-04-25 CN CN 03111555 patent/CN1450695A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242056A (en) * | 2014-10-10 | 2014-12-24 | 中国电子科技集团公司第四十四研究所 | Ridge waveguide chip structure capable of improving electrical isolation capability and production method of ridge waveguide chip structure |
| CN104242056B (en) * | 2014-10-10 | 2017-02-15 | 中国电子科技集团公司第四十四研究所 | Ridge waveguide chip structure capable of improving electrical isolation capability and production method of ridge waveguide chip structure |
| CN107706740A (en) * | 2017-09-29 | 2018-02-16 | 长春理工大学 | A kind of method that the non-implanted uptake zone of InP-base SLD electric currents is made using electrochemical corrosion technology |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liao et al. | III–V quantum-dot lasers monolithically grown on silicon | |
| JP2842292B2 (en) | Semiconductor optical integrated device and manufacturing method | |
| JP5185537B2 (en) | Optical semiconductor device and manufacturing method thereof | |
| JPH1075009A (en) | Optical semiconductor device and its manufacture | |
| JPH10173277A (en) | Optical semiconductor device and manufacture thereof | |
| US8921138B2 (en) | Method of manufacturing multi-wavelengths distributed feedback (DFB) laser array including top separate confinement layer having different thickness laser units on the quantum-well layer grown by selective area epitaxial growth | |
| JPH07302952A (en) | Manufacture of semiconductor device | |
| US20090267195A1 (en) | Semiconductor element and method for manufacturing semiconductor element | |
| CN102474071A (en) | Method for manufacturing semiconductor optical device, method for manufacturing semiconductor optical laser element, and semiconductor optical device | |
| CN1870220A (en) | Method of manufacturing optical devices and related improvements | |
| CN1450695A (en) | Quantum well mixing ultraradiation luminous pipe and making method thereof | |
| CN100521259C (en) | Method for producing wide-spectral band wide super-radiation light-emitting diode and diode thereof | |
| CN1747264A (en) | The manufacture method of laser of distributed Blatt reflective semiconductor with tuning wavelength | |
| JP4984514B2 (en) | Semiconductor light emitting device and method for manufacturing the semiconductor light emitting device | |
| CN101425659B (en) | Semiconductor laser and manufacturing method thereof | |
| US7368062B2 (en) | Method and apparatus for a low parasitic capacitance butt-joined passive waveguide connected to an active structure | |
| McDougall et al. | Broad optical bandwidth InGaAs-InAlGaAs light-emitting diodes fabricated using a laser annealing process | |
| Junesand et al. | InP overgrowth on SiO2 for active photonic devices on silicon | |
| JPH08292336A (en) | Production of optical semiconductor integrated circuit | |
| Zhao et al. | Spatial control based quantum well intermixing in InP/InGaAsP structures using ICP | |
| JP2005340644A (en) | Light emitting diode and manufacturing method thereof | |
| CN1312812C (en) | Making process of bragg reflection semiconductor laser with tunable distributed wavelength | |
| JP2004109594A (en) | Waveguide type semiconductor element | |
| Veuhoff | Exploitation of surface selective growth in metalorganic growth technologies for device applications | |
| Feng et al. | Narrow stripe selective growth of oxide-free InGaAlAs MQWs used for buried heterostructure lasers |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| AD01 | Patent right deemed abandoned | ||
| C20 | Patent right or utility model deemed to be abandoned or is abandoned |