CN107706140A - A kind of annular strain chip architecture for graphite frame - Google Patents
A kind of annular strain chip architecture for graphite frame Download PDFInfo
- Publication number
- CN107706140A CN107706140A CN201710780856.9A CN201710780856A CN107706140A CN 107706140 A CN107706140 A CN 107706140A CN 201710780856 A CN201710780856 A CN 201710780856A CN 107706140 A CN107706140 A CN 107706140A
- Authority
- CN
- China
- Prior art keywords
- graphite frame
- silicon chip
- foil gauge
- annular
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 37
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 37
- 239000010439 graphite Substances 0.000 title claims abstract description 37
- 239000011888 foil Substances 0.000 claims abstract description 14
- 238000005275 alloying Methods 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910052571 earthenware Inorganic materials 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 26
- 229910052710 silicon Inorganic materials 0.000 abstract description 26
- 239000010703 silicon Substances 0.000 abstract description 26
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000000694 effects Effects 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013003 hot bending Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002277 temperature effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
A kind of annular strain chip architecture for graphite frame, including annular foil gauge, the annular foil gauge include substrate, alloying metal silk are distributed with substrate, the film for covering alloying metal silk are compounded with substrate, alloying metal silk both ends are connected with lead respectively；It is arranged outside annular foil gauge and is fixed with earthenware.The present invention has the characteristics that compact-sized, exploitativeness is strong, novel in design, the fixing point of the silicon chip of graphite frame and hold-down bars are redistributed, reduce graphite frame piece spacing simultaneously, when the graphite frame that silicon chip loads after improving, which enters reacting furnace, carries out high temperature plated film, this new graphite frame designs the spacing of the silicon chip in graphite frame in the case where ensure that high temperature on the premise of increasing production capacity, to ensure filling effect Uniform discharge of the reacting gas between silicon chip.
Description
Technical field
The present invention relates to graphite frame connecting structure, more particularly, to a kind of annular strain chip architecture for graphite frame.
Background technology
In solar cell preparation process, silicon chip is generally required by Chemical cleaning, surface corrosion, diffusion, gone
Battery can be just made in the processes such as side, removal back of the body knot, making electrode, front antireflection layer plated film.Front antireflection layer plated film is referred to as
Plated film, loading device is referred to as graphite frame used by plated film, needs silicon chip loading graphite frame before plated film, then by plated film
Graphite frame be re-fed into plated film boiler tube after, carry out the plated film of silicon chip surface, and the number of graphite frame piece directly determines plating
The production capacity of the unit interval of film.
Because the dynamic condition such as electric energy is constant used in a plated film, increase the production capacity of the graphite frame of diffusion
It is the important channel for reducing production cost.When silicon chip in graphite frame carries out plated film in coated stove, silicon chip is by high temperature
Effect, it may occur that bending, spacing after silicon chip is by hot bending between silicon chip can reduce, can thus change reacting gas and exist
Filling effect between silicon chip, at the same coating process glow discharge as spacing reduce and change plated film reaction speed,
And then influence the plating film uniformity of silicon chip surface.In addition, for clamping graphite frame piece stress distribution situation, graphite under the condition of high temperature
The deformation extent of frame, prior art can not obtain relevant information and graphite frame piece are adjusted, and so also further influence silicon chip
Coating quality.Because the diameter of reaction tube is fixed, increase frame piece yield is usually directly to reduce frame piece spacing, increases silicon
Piece quantity, filling effect and Uniform discharge of the reacting gas between silicon chip can be so influenceed, reduce the yield rate of plated film.
The content of the invention
It is an object of the present invention to provide a kind of annular strain chip architecture for graphite frame, directly contracted with solving existing graphite frame
Small frame piece spacing, while increasing production capacity, filling effect and Uniform discharge of the reacting gas between silicon chip can be influenceed, is caused
The technical problems such as plated film fraction defective increase.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention is：A kind of annular strain for graphite frame
Chip architecture, including annular foil gauge, it is characterised in that the annular foil gauge includes substrate, and alloying metal is distributed with substrate
Thread, the film for covering alloying metal silk is compounded with substrate, alloying metal silk both ends are connected with lead respectively.
Preferably, being fixed with annular foil gauge outside the connecting hole, earthenware is arranged with outside annular foil gauge.
The present invention redistributes the fixing point of the silicon chip of graphite frame and hold-down bars, while reduces graphite frame piece spacing, subtracts
Graphite frame after small distance can increase the production production capacity in the unit interval, and this new graphite frame design is in increase production capacity
Under the premise of ensure that the spacing of the silicon chip in graphite frame under high temperature, to ensure that filling effect of the reacting gas between silicon chip discharges
Uniformity.On the premise of silicon chip surface plating film uniformity can so be ensured, the diffusion production capacity in the unit interval is greatly improved.
Brief description of the drawings
Fig. 1 is the structural representation of the present invention；
Fig. 2 is structural representation of the present invention on graphite frame；
Fig. 3 is the cut-away side view of the present invention.
Embodiment
With reference to the accompanying drawings and detailed description, technical scheme is described in further detail.
Fig. 1 is the structural representation of the present invention, and Fig. 2 is structural representation of the present invention on graphite frame；Fig. 3 is the present invention
Cut-away side view.From Fig. 1,2,3, the high yield graphite frame, including multiple frame pieces, the spacing between adjacent frame piece is
11mm..Frame piece is provided with multiple square passages 2, and passage 2 is horizontal by being obliquely installed（α=3°）, square passage side
A length of 147mm, each square passage 2 are nearby equipped with left side fixing hole, right side fixing hole and bottom fixing hole, above-mentioned positioning
Hold-down bars has been placed in hole.Ceramic joining rod is placed at the top and bottom of frame piece, frame piece both ends are provided with electrode jack.Frame piece
Top and bottom are equipped with connecting hole, and the connecting hole has placed ceramic joining rod.
In order to measure stress variation between graphite frame piece, understand graphite frame deformation extent, ring is fixed with outside the connecting hole
Shape foil gauge 8, annular foil gauge 8 are arranged outside and are fixed with earthenware 81.The earthenware 81 is advantageous to simplify bar program, is easy to
Quick bar.The annular foil gauge 8 includes substrate 86, and alloying metal silk 83 is distributed with substrate 86, be compounded with substrate by
The film 82 of alloying metal silk covering, the both ends of alloying metal silk 83 are connected with lead 85 respectively.
The a diameter of 6mm of left side fixing hole, the square passage left side 8mm of the fixing hole distance of center circle, away from square passage top
Side 35mm.
The a diameter of 5mm of right side fixing hole, the square passage right edge 8mm of the fixing hole distance of center circle, away from square passage top
Side 70.2mm.
The a diameter of 6mm of bottom fixing hole, the fixing hole distance of center circle are right away from square passage away from square passage base 8mm
Side 57mm.
When silicon chip, which loads graphite frame, carries out high temperature plated film, hold-down bars can stop that silicon chip deforms, and ensure the spacing between silicon chip,
Ensure the yields of front side of silicon wafer antireflection layer plated film.Graphite frame piece spacing reduces simultaneously, can increase increase filming equipment stove list
Production capacity in the time of position, because the dynamic condition such as the electric energy of silicon chip in process of production is constant, new graphite frame
Plated film production efficiency can be effectively improved, reduces the unit cost of production.
Finally it is pointed out that above embodiment is only the more representational example of the present invention.Obviously, it is of the invention
Above-mentioned embodiment is not limited to, there can also be many deformations.Every technical spirit according to the present invention specific reality to more than
Any simple modification, equivalent change and modification that the mode of applying is made, it is considered as belonging to protection scope of the present invention.
Claims (2)
1. a kind of annular strain chip architecture for graphite frame, including annular foil gauge, it is characterised in that the annular foil gauge
Including substrate, alloying metal silk is distributed with substrate, the film for covering alloying metal silk, alloying metal silk are compounded with substrate
Both ends are connected with lead respectively.
A kind of 2. annular strain chip architecture for graphite frame according to claim 1, it is characterised in that the connecting hole
Annular foil gauge is fixed with outside, and earthenware is arranged with outside annular foil gauge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710780856.9A CN107706140A (en) | 2017-09-01 | 2017-09-01 | A kind of annular strain chip architecture for graphite frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710780856.9A CN107706140A (en) | 2017-09-01 | 2017-09-01 | A kind of annular strain chip architecture for graphite frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107706140A true CN107706140A (en) | 2018-02-16 |
Family
ID=61171549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710780856.9A Withdrawn CN107706140A (en) | 2017-09-01 | 2017-09-01 | A kind of annular strain chip architecture for graphite frame |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107706140A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109148343A (en) * | 2018-08-15 | 2019-01-04 | 横店集团东磁股份有限公司 | A kind of silicon chip of solar cell plated film graphite boat |
-
2017
- 2017-09-01 CN CN201710780856.9A patent/CN107706140A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109148343A (en) * | 2018-08-15 | 2019-01-04 | 横店集团东磁股份有限公司 | A kind of silicon chip of solar cell plated film graphite boat |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180216 |
|
| WW01 | Invention patent application withdrawn after publication |