CN102424957B - Multi-layer product support for vapor deposition, and chemical vapor deposition reaction chamber - Google Patents
Multi-layer product support for vapor deposition, and chemical vapor deposition reaction chamber Download PDFInfo
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- CN102424957B CN102424957B CN 201110404792 CN201110404792A CN102424957B CN 102424957 B CN102424957 B CN 102424957B CN 201110404792 CN201110404792 CN 201110404792 CN 201110404792 A CN201110404792 A CN 201110404792A CN 102424957 B CN102424957 B CN 102424957B
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Abstract
The present invention relates to a multi-layer product support for vapor deposition, and a chemical vapor deposition reaction chamber. The multi-layer product support comprises unit layers, wherein the unit layer comprises a round sleeve, a gas distribution disk and a support rod. The structure of the unit layer is characterized in that: the gas distribution disk is arranged on the round sleeve; the support rod is vertically fixed on the gas distribution disk, and is provided for supporting a substrate requiring coating; the round sleeve of the one unit layer is placed on the gas distribution disk of the other unit layer; the upper part of the round sleeve wall is symmetrically provided with two notches, wherein the gas can conveniently flow by the notches. According to the chemical vapor deposition reaction chamber, the multi-layer product support is placed on an incoming gas distribution plate on the gas inlet inside the cavity; the gas inlet is positioned on the bottom of the reaction chamber; the position of the gas outlet is relative to the position of the gas inlet, and the gas outlet is positioned on the top of the reaction chamber. The quality of the coating product produced by the multi-layer product support of the present invention is uniform, the number of the coating product is increased by several times, and the production efficiency is improved.
Description
Technical field
The present invention relates to the indoor production fixture of a kind of vapour deposition, particularly produce in a kind of gaseous phase deposition stove of multilayered structure with multi-layer product support and chemical vapor deposition reaction chamber.
Background technology
Chemical vapour deposition (CVD) method is considered to the most promising coat of silicon carbide preparation method, because it has splendid adaptive faculty to complex-shaped and parts with internal surface, can carry out the coating preparation under relatively lower temp.
Shino Magnitic Mateerial Co., ltd is 200510004777.6 in the application number of application on September 29th, 1999, and name is called " product support that is used for vapor deposition apparatus ".Described product support is mainly the sample of supporting plane type, and the product support of this invention comprises the main body of a tubulose, and the inner diameter size of described main body consists of the suitable described goods that keep, and described main body is made by Stainless Steel Wire.Middle portion comprises the minor diameter whisker around the coil winding of described main body, have the coil with the relation setting of space in described middle portion, thereby the goods that remain in described product support are come out in order to carry out surface treatment outside support.
During the coat of silicon carbide production of articles, be will product be coated with support by support be positioned in reaction chamber, gas reaction is at product surface formation of deposits coat of silicon carbide to be coated with, so for the quality and quantity of coat of silicon carbide production of articles, it is particularly important that suitable support Design and space arrangement just seem.Mostly concentrate on now and can guarantee coating quality, can improve again in the single-layer fixture design of product amount, but increase merely support due to the impact that is subjected to the objective condition such as diameter in stove, the increase of output is very limited.In general, the jig Design of various single layer structures and use, the quantity of product or less when single stove is produced, production efficiency is low, and production cost is high.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of chemical vapour deposition multi-layer product support.
The present invention also provides the chemical vapor deposition reaction chamber that utilizes above-mentioned multi-layer product support.
The present invention also provides and utilizes above-mentioned multi-layer product support to prepare the method for coat of silicon carbide goods.
The term explanation:
Goods refer to utilize chemical Vapor deposition process to carry out the workpiece of coating or film growth.Mainly comprise the graphite substrate or the substrate that carry out coat of silicon carbide in the present invention, but be not limited to this.
Product support also claims work rest or fixture in production, be to be placed on the bracing or strutting arrangement that is used for carrying substrate to be coated with in chemical vapor deposition reaction chamber.
Technical scheme of the present invention is as follows:
A kind of chemical vapour deposition multi-layer product support comprises the unit layer that is comprised of round buss, air-spreading disk and pole; The structure of described unit layer is that air-spreading disk is placed on round buss, and pole uprightly is fixed on and is used on air-spreading disk supporting substrate to be coated with, and places the round buss of another unit layer on the air-spreading disk of a unit; Wherein, the top of described round buss wall is arranged with two recesses and is convenient to gas communication; Described pole has a tip.
Preferred according to the present invention, the round buss external diameter is identical with the air-spreading disk diameter.The combination layer by layer of being convenient to unit layer is put.The quantity of unit layer is determined according to the quantity of space size in chemical vapor deposition reaction chamber and a stove article of manufacture.
Described air-spreading disk is the graphite disk that is provided with through hole, and through hole is the air flow passage of gas of being uniformly dispersed.
On described air-spreading disk, fixing pole quantity and the form of putting determine according to quantity, shape and the size of substrate to be coated with, to try one's best tungsten pin fixed support substrate as much as possible few as target.Preferably, 3～6 poles are supported a substrate, and are most preferred, and 3 poles are supported a substrate.
Described round buss requirement for height is after pole is fixed on air-spreading disk upper support substrate, the air-spreading disk 20-50mm of another unit layer of substrate distance from top.
Preferred according to the present invention, described pole is the tungsten pin.Described tungsten pin bottom is fixed in shrinkage pool on air-spreading disk, and tungsten pin top is tip-like.
Preferred according to the present invention, round buss is graphite material, wall thickness 6～8mm.
Preferred according to the present invention, the recess shape on described round buss wall top is arc, rectangle, square or taper.
Preferred according to the present invention, chemical vapour deposition is comprised of 3～5 unit layers with the multilager base plate support.
A kind of chemical vapor deposition reaction chamber, comprise reactor chamber and multi-layer product support of the present invention, described multi-layer product is propped up be placed in cavity on the inlet air distribution plate on inlet mouth, inlet mouth is positioned at reaction chamber bottom, the top that be positioned at reaction chamber relative to inlet mouth, air outlet.
Above-mentioned chemical vapor deposition reaction chamber is low pressure chemical vapor deposition equipment.
Multi-layer product support of the present invention can be used for the chemical Vapor deposition process of multiple coated products and produce.Especially for the production of graphite substrate coat of silicon carbide goods, can greatly enhance productivity.
A kind of efficient production method of coat of silicon carbide goods, comprise and use multi-layer product support of the present invention, described multi-layer product is propped up be placed in the phase depositing reaction chamber cavity on the inlet air distribution plate on inlet mouth, substrate to be coated with is positioned over the tip of pole, substrate to be coated with of 3～4 pole supports, unstripped gas enters bottom reaction chamber, and reacted gas is discharged from the top of reaction chamber.
Described unstripped gas is SiCl
4With H
2Reaction chamber temperature is 1300～1600 ℃.Can produce the coat of silicon carbide goods of most amounts by a stove.
Excellent results of the present invention is as follows:
Multi-layer product support of the present invention simple and reasonable, combination, can use according to the reaction chamber size flexible combination layer by layer.The multi-layer product support is positioned at the homo(io)thermism district of reaction chamber when using, the working condition of each layer is basically identical, can guarantee the quality product homogeneous of every layer.
In multi-layer product support of the present invention, preferred tungsten pin comes directly and substrate contacts to be coated with, put substrate to be coated with on the needle point on tungsten pin top, product to be coated with like this is except minimum 3 minimum point of suppon, and other parts all are exposed to can both be coated in atmosphere, can guarantee that coating is complete evenly.In addition, the hardness of tungsten pin is large, and load-bearing is good, and the shared space of needle point is also very little; The high thermal resistance of tungsten pin is good, under the condition of high temperature, can not react or melt in reaction chamber.
Adopt multi-layer product support of the present invention to carry out the production of coated products, coated products product amount in one stove can be several times of conventional apparatus, improve greatly production efficiency, reduced production cost, reduced the trouble of multi-pass operations and manpower, the wasting of resources.Can significantly improve the product amount that a stove is produced, guarantee simultaneously quality product.
Multi-layer product support of the present invention, the design of a stove multilayer is once to improve greatly for production efficiency and cost savings, it can be applied in the production of multiple coating prod.
Description of drawings
Fig. 1 is multi-layer product supporting structure schematic diagram of the present invention.
Fig. 2 is the round buss vertical view of multi-layer product support of the present invention.
Fig. 3 is the chemical vapor deposition reaction chamber structure schematic diagram that utilizes multi-layer product support of the present invention.
In figure: 1. round buss, 2. air-spreading disk, 3. pole (tungsten pin), 4. substrate to be coated with (goods), 5. recess, the 6. through hole on air-spreading disk; 7. reactor chamber, 8. the inlet air distribution plate on inlet mouth, 9. inlet mouth, 10. air outlet.
The specific examples mode
The invention will be further described below in conjunction with embodiment and accompanying drawing, but be not limited to this.
A kind of chemical vapour deposition multi-layer product support, structure comprise the unit layer that is comprised of round buss 1, air-spreading disk 2 and pole 3 as shown in Figure 1 and Figure 2; The structure of described unit layer is that air-spreading disk 2 is placed on round buss 1, and round buss 1 external diameter is identical with air-spreading disk 2 diameters.Pole 3 uprightly is fixed on air-spreading disk 2, places the round buss 1 of another unit layer on the air-spreading disk 2 of a unit layer, and totally 3 unit layers are put in combination layer by layer; Wherein, the top of described round buss 1 wall is arranged with two rectangle recesses 5 as the gas communication passage; Described pole is the tungsten pin, and tungsten pin bottom is fixed in shrinkage pool on air-spreading disk, and tungsten pin top is tip-like, is used for putting the substrate of goods.
Described air-spreading disk 2 is made by prior art for being provided with the graphite disk of through hole.Tungsten pin fixing on described air-spreading disk 2 is supported by 3 tungsten pins by each substrate, puts form according to shape and the quantity decision tungsten pin of substrate to be coated with.
Described round buss 1 is graphite material, wall thickness 7mm, and requirement for height is after the tungsten pin is fixed on air-spreading disk upper support substrate, the air-spreading disk 30mm of another unit layer of substrate distance from top.
A kind of chemical vapour deposition multi-layer product support, as described in Example 1, difference is to have 4 unit layers; Wherein, the top of described round buss 1 wall is arranged with two circular arc recesses as the gas communication passage; Tungsten pin fixing on described air-spreading disk is supported by 4 tungsten pins by each substrate.Described round buss is graphite material, wall thickness 8mm, and highly for after the tungsten pin is fixed on air-spreading disk upper support substrate, the air-spreading disk of another unit layer of substrate distance from top is 25mm.
Embodiment 3,
A kind of chemical vapor deposition reaction chamber, comprise the described multi-layer product support of reactor chamber 7 and embodiment 1, described multi-layer product is propped up be placed in cavity on the inlet air distribution plate 8 on inlet mouth 9, inlet mouth 9 is positioned at bottom reaction chamber, the top that be positioned at reaction chamber relative to inlet mouth 9, air outlet 10.Be the chemical vapor depsotition equipment of 200～5000 handkerchiefs as vacuum tightness.
Embodiment 4,
A kind of method of high yield coat of silicon carbide goods, comprise and use multi-layer product support of the present invention and the described chemical vapor deposition reaction chamber of embodiment 3, described multi-layer product is propped up be placed in reactor chamber on the inlet air distribution plate on inlet mouth, substrate 4 to be coated with is positioned over the tip of tungsten pin, unstripped gas enters bottom reaction chamber, and reacted gas is discharged from the top of reaction chamber.Unstripped gas is SiCl
4With H
2Volume ratio is 1: 5～50, and reaction chamber temperature is 1300～1600 ℃, and in reaction chamber, vacuum tightness is 200～5000 handkerchiefs.Concrete operations are as follows:
First a round buss 1 is placed on the stove and accessory that arranges in reaction chamber, then disc air-spreading disk 2 is placed on round buss 1, because its diameter is identical, put than being easier to, fix in advance tungsten pin pole on air-spreading disk 2, graphite substrate 4 that then will be to be coated with is positioned on the point of tungsten pin 3, and 3 tungsten pins support a substrate, graphite substrate all is suspended from the space except 3 very little point of suppon like this, is easy to comprehensive spreadability of reactive deposition; After the first layer sets, round buss with another layer is placed on the air-spreading disk 2 of the first layer again, and then the air-spreading disk that fixes in advance the tungsten pin and the graphite substrate of the placement second layer, arrangement method is identical with the first layer, repeat aforementioned operation and carry out putting of three-layer unit, so just can realize the combination of the structure of multilayer.The concrete unit number of plies is looked size and the furnace inner space of product and is decided.After substrate was well placed, gas communication can not hindered, and the current density of each layer structure is even, simultaneously owing to being placed on the temperature homogeneity range, had guaranteed the consistence of each layer structure temperature yet.The assurance of manufacturing parameter is also the assurance of quality product, has guaranteed the high efficiency of production and the reliability of quality.
Compare with the fixture of single layer structure, the uniform in quality of utilizing the multilayered structure product support to produce is consistent, and quantity has increased several times, has improved greatly the efficient of producing, and has saved the energy and time, has reduced production cost.
Claims (10)
1. a chemical vapour deposition multi-layer product support, is characterized in that comprising the unit layer that is comprised of round buss, air-spreading disk and pole; The structure of described unit layer is that air-spreading disk is placed on round buss, and pole uprightly is fixed on and is used on air-spreading disk supporting substrate to be coated with, and places the round buss of another unit layer on the air-spreading disk of a unit; Wherein, the top of described round buss wall is arranged with two recesses and is convenient to gas communication; Described pole has a tip.
2. multi-layer product support as claimed in claim 1, is characterized in that, the round buss external diameter is identical with the air-spreading disk diameter.
3. multi-layer product support as claimed in claim 1, is characterized in that, described air-spreading disk is the graphite disk that is provided with through hole.
4. multi-layer product support as claimed in claim 1, is characterized in that, described round buss height is after pole is fixed on air-spreading disk upper support substrate, another layer of substrate distance from top air-spreading disk 20-50mm.
5. multi-layer product support as claimed in claim 1, is characterized in that, described pole is the tungsten pin.
6. multi-layer product support as claimed in claim 1, is characterized in that, described round buss is graphite material, wall thickness 6～8mm.
7. multi-layer product support as claimed in claim 1, is characterized in that, the recess shape on described round buss wall top is arc, rectangle, square or taper.
8. multi-layer product support as claimed in claim 1, is characterized in that, described multi-layer product support is comprised of 3～5 unit layers.
9. chemical vapor deposition reaction chamber, comprise the described multi-layer product support of claim 1-8 any one and reactor chamber, described multi-layer product props up on the inlet air distribution plate that is placed on the interior inlet mouth of cavity, inlet mouth is positioned at bottom reaction chamber, the top that be positioned at reaction chamber relative to inlet mouth, air outlet.
10. the production method of coat of silicon carbide goods, comprise that right to use requires the described multi-layer product support of 1-8 any one, described multi-layer product is propped up be placed in the phase depositing reaction chamber cavity on the inlet air distribution plate on inlet mouth, substrate to be coated with is positioned over the tip of pole, substrate to be coated with of 3～4 pole supports, unstripped gas enters bottom reaction chamber, and reacted gas is discharged from the top of reaction chamber.
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| CN 201110404792 CN102424957B (en) | 2011-12-07 | 2011-12-07 | Multi-layer product support for vapor deposition, and chemical vapor deposition reaction chamber |
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| CN 201110404792 CN102424957B (en) | 2011-12-07 | 2011-12-07 | Multi-layer product support for vapor deposition, and chemical vapor deposition reaction chamber |
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| CN103668102B (en) * | 2012-09-09 | 2015-12-09 | 亚智科技股份有限公司 | For the clamping device of chemical deposition equipment |
| CN103243024A (en) * | 2013-05-24 | 2013-08-14 | 河南农业大学 | Culture bottle for sulfur hexafluoride permeation tube |
| CN113104834A (en) * | 2021-04-19 | 2021-07-13 | 苏州力碳新能源发展有限公司 | Rotary CVD carbon material surface uniform deposition device |
| CN113622028A (en) * | 2021-08-11 | 2021-11-09 | 苏州步科斯新材料科技有限公司 | Thermal field structure and technological method for improving utilization rate of CVD silicon carbide deposition furnace |
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| CN2283067Y (en) * | 1996-03-07 | 1998-06-03 | 中国科学院金属研究所 | Equipment for hot wire chemical vapour deposition diamond |
| EP0992605A3 (en) * | 1998-10-02 | 2002-11-13 | Sumitomo Special Metals Co., Ltd. | Support member, holder, process, and apparatus in the field of surface-treatment |
| CN2801811Y (en) * | 2005-04-08 | 2006-08-02 | 中山大学 | Quartz substrate support for horizontal fast heating chemical gaseous phase sedimentation system |
| CN101328577A (en) * | 2008-07-17 | 2008-12-24 | 居小平 | Method for preparing airplane carbon brake disc by chemical vapor deposition |
| DE102008044024A1 (en) * | 2008-11-24 | 2010-05-27 | Robert Bosch Gmbh | Coating method and coating device |
| CN202369641U (en) * | 2011-12-07 | 2012-08-08 | 刘汝强 | Multilayer product support frame for vapor deposition |
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