CN107681031B - 一种十字棱台图形化衬底、制备方法及其应用 - Google Patents
一种十字棱台图形化衬底、制备方法及其应用 Download PDFInfo
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- CN107681031B CN107681031B CN201710972485.4A CN201710972485A CN107681031B CN 107681031 B CN107681031 B CN 107681031B CN 201710972485 A CN201710972485 A CN 201710972485A CN 107681031 B CN107681031 B CN 107681031B
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- 239000000758 substrate Substances 0.000 title claims abstract description 102
- 238000002360 preparation method Methods 0.000 title claims abstract description 11
- 239000004005 microsphere Substances 0.000 claims abstract description 42
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 24
- 239000010980 sapphire Substances 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims description 29
- 238000004513 sizing Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000003892 spreading Methods 0.000 claims description 4
- 230000007480 spreading Effects 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 4
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 12
- 238000011161 development Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 231100000956 nontoxicity Toxicity 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710972485.4A CN107681031B (zh) | 2017-10-18 | 2017-10-18 | 一种十字棱台图形化衬底、制备方法及其应用 |
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CN201710972485.4A CN107681031B (zh) | 2017-10-18 | 2017-10-18 | 一种十字棱台图形化衬底、制备方法及其应用 |
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CN107681031A CN107681031A (zh) | 2018-02-09 |
CN107681031B true CN107681031B (zh) | 2023-10-17 |
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Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102376874A (zh) * | 2011-11-28 | 2012-03-14 | 中国科学院半导体研究所 | 基于二维电子气材料的半导体磁敏型传感器及其制作方法 |
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US8765501B2 (en) * | 2010-03-01 | 2014-07-01 | Applied Materials, Inc. | Formation of group III-V material layers on patterned substrates |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102376874A (zh) * | 2011-11-28 | 2012-03-14 | 中国科学院半导体研究所 | 基于二维电子气材料的半导体磁敏型传感器及其制作方法 |
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Effective date of registration: 20240219 Address after: 529100 floor 3 and 4, side B, building 107, phase I, new fortune environmental protection electroplating base, yamen Town, Xinhui District, Jiangmen City, Guangdong Province Patentee after: DINGXIANG (JIANGMEN) ELECTRONIC TECHNOLOGY Co.,Ltd. Country or region after: China Address before: 529000 No. 22 Dongcheng village, Guangdong City, Jiangmen Province Patentee before: WUYI University Country or region before: China |
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