CN107644900B - 一种p-AlN/i-AlN/n-ZnO结构及其制备方法、应用 - Google Patents
一种p-AlN/i-AlN/n-ZnO结构及其制备方法、应用 Download PDFInfo
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- CN107644900B CN107644900B CN201710972250.5A CN201710972250A CN107644900B CN 107644900 B CN107644900 B CN 107644900B CN 201710972250 A CN201710972250 A CN 201710972250A CN 107644900 B CN107644900 B CN 107644900B
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CN201710972250.5A CN107644900B (zh) | 2017-10-18 | 2017-10-18 | 一种p-AlN/i-AlN/n-ZnO结构及其制备方法、应用 |
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CN108807625A (zh) * | 2018-04-24 | 2018-11-13 | 河源市众拓光电科技有限公司 | 一种AlN缓冲层结构及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005285401A (ja) * | 2004-03-29 | 2005-10-13 | Sanyo Electric Co Ltd | 発光素子 |
CN106206868A (zh) * | 2016-07-25 | 2016-12-07 | 哈尔滨工业大学 | 一种高效率发光的纳米ZnO/AlN异质结的制备方法 |
CN207938614U (zh) * | 2017-10-18 | 2018-10-02 | 五邑大学 | 一种p-AlN/i-AlN/n-ZnO结构 |
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US8044381B2 (en) * | 2007-07-30 | 2011-10-25 | Hewlett-Packard Development Company, L.P. | Light emitting diode (LED) |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2005285401A (ja) * | 2004-03-29 | 2005-10-13 | Sanyo Electric Co Ltd | 発光素子 |
CN106206868A (zh) * | 2016-07-25 | 2016-12-07 | 哈尔滨工业大学 | 一种高效率发光的纳米ZnO/AlN异质结的制备方法 |
CN207938614U (zh) * | 2017-10-18 | 2018-10-02 | 五邑大学 | 一种p-AlN/i-AlN/n-ZnO结构 |
Non-Patent Citations (2)
Title |
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J.B.You 等.Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes.《APPLIED PHYSICS LETTERS》.2010,第201102-1至201102-3页. * |
Wei Wang 等.The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111).《Nanoscale research letters》.2015,第1-7页. * |
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