CN107655599B - Method for measuring micro stress of optical element - Google Patents
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- 230000003287 optical effect Effects 0.000 title claims abstract description 70
- 238000000034 method Methods 0.000 title claims abstract description 33
- 230000010287 polarization Effects 0.000 claims abstract description 14
- 238000001514 detection method Methods 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims description 13
- 230000005540 biological transmission Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 claims description 3
- 101000634119 Arabidopsis thaliana RNA polymerase sigma factor sigC Proteins 0.000 claims 2
- 238000005259 measurement Methods 0.000 abstract description 19
- 230000000694 effects Effects 0.000 abstract description 4
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000012545 processing Methods 0.000 abstract description 2
- 230000035882 stress Effects 0.000 description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
- 239000005304 optical glass Substances 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
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Abstract
The invention relates to a method for measuring micro stress of an optical element, wherein the method comprises the following steps: a beam of linearly polarized laser entering the optical resonant cavity is modulated by a birefringence effect generated by the stress of an optical element to be measured which is arranged in the cavity vertical to the laser beam and then is emitted from the resonant cavity. The emergent light is changed into linearly polarized light after passing through a polarization state detection device consisting of the quarter-wave plate and the analyzer, and the linearly polarized light is collected by a photoelectric detector after being focused by a focusing lens. And the incident laser beam is switched off, and a cavity ring-down signal is generated and collected. And fitting, processing and calculating the cavity ring-down signal to obtain a stress value of the optical element. The technical scheme provided by the invention has the advantages that: the system has simple structure and high measurement sensitivity and precision, and compared with the traditional method for measuring the stress of the S-narmont quarter wave plate, the measurement sensitivity is improved by at least three orders of magnitude.
Description
Technical Field
The invention relates to the technical field of measurement of birefringence effect and stress of optical materials, in particular to a method for measuring micro stress of an optical element.
Background
The effects of stress are widespread during the manufacture, installation, use and failure of optical components. The stress causes the change of the refractive index on the optical element, generates the birefringence effect, is more sensitive to the existence of the stress particularly in high-precision optical equipment and instruments, and needs to grasp and control the residual stress generated in the manufacturing process of the optical element, the mechanical stress introduced in the installation process, the thermal stress generated in the application of high-power laser and the like in time. In order to meet the requirements of high performance and high reliability of precision optical equipment and instruments, it is important to accurately measure the stress of an optical element. A typical method for measuring the stress of an optical element is to indirectly obtain stress information by measuring the birefringence phase difference.
The traditional stress birefringence quantitative measurement method is a Sinarmont quarter-wave plate method, and monochromatic natural light sequentially passes through a polarizer, a sample to be measured, a quarter-wave plate and an analyzer. The transmission axes of the polarizer and the analyzer are vertical to each other and are respectively parallel to the fast and slow axes of the quarter-wave plate. And rotating the sample and the analyzer in sequence to find the extinction position, so as to obtain the stress birefringence phase difference on the sample. The method has high requirements on the phase delay amount and the rotation angle of the quarter-wave plate, and the detection precision is low.
In 2009, tianfenggui et al (optical glass stress measuring device and measuring method, application No. 200910304198.1, application publication No. CN 101592537 a) proposed a method for measuring the stress of an optical element by using a common optical path interferometer composed of a transverse zeeman laser, which adopts the principle of optical heterodyne, and divides laser light into one path of reflected light and one path of transmitted light by a half-mirror. The transmitted light is received by a first detector through a half-wave plate, an optical glass sample and a polaroid; and the other path of reflected light is received by a second detector through a polarizing film, and the phase difference of birefringence generated by sample stress is acquired by comparing the phases of the first detector and the second detector through a phase meter.
In 2013, Zeng Aijun et al (quarter wave plate phase retardation measuring device and measuring method, application No. 201310250418.3, application publication No. CN 103335821A) proposed a method for measuring wave plate phase retardation using photoelastic modulator and lock-in amplifier, wherein light emitted from a collimated light source sequentially passes through a circular polarizer, photoelastic modulator, a wave plate to be measured and a circular analyzer to reach a photodetector. The second harmonic component and the direct current component output by the photoelectric detector are detected by the lock-in amplifier to measure the phase delay amount of the wave plate. The method uses the photoelastic modulator, and greatly improves the measurement cost.
In 2015, eastern et al (an optical material stress measurement system, patent application No. 201510409605.0, application publication No. CN 105043612A) proposed a solution for stress birefringence measurement by utilizing the phenomenon that the output polarization state of a half-external cavity laser is affected by feedback light modulated by optical material stress birefringence to generate polarization state jump. The external cavity length tuning component modulates output light of the laser, the output light is incident on a sample to be measured, the back surface of the sample is provided with a reflecting film, the light reflected from the back surface of the sample is fed back to the laser resonant cavity, so that the polarization state of the output light of the laser jumps, and the stress birefringence is determined by measuring the jump time of an output signal, so that the measurement precision is influenced by the rise and fall time of the detector.
In summary, the optical element stress measurement method has various and various characteristics, and the method for measuring the micro stress of the optical element provided by the invention has the advantages of simple structure of a measurement system, no damage to a sample, easiness in adjustment, no influence of light source intensity fluctuation and the like.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the stress of the optical element can be detected in a nondestructive mode through a simple and reliable method, and particularly the micro stress of the optical element can be measured with high precision.
In order to achieve the purpose, the invention provides the following technical scheme: a method for measuring micro stress of an optical element is characterized in that:
(1) the measuring device consists of a laser light source 1, a polarizer 2, planoconcave high reflectors 3 and 5, an optical element 4 to be measured, a quarter-wave plate 6, an analyzer 7, a focusing lens 8 and a photoelectric detector 9; a beam of laser emitted by the laser source 1 passes through the polarizer 2 to form a beam of linearly polarized light with a determined azimuth angle. The linearly polarized light vertically enters an optical resonant cavity, the optical resonant cavity is a stable initial straight cavity formed by two identical plano-concave high reflecting mirrors 3 and 5, and the length of the resonant cavity is L0(ii) a The linearly polarized laser beam coupled into the optical resonant cavity is reflected back and forth in the cavity and modulated by the stress birefringence of the optical element to be measured 4 which is arranged in the cavity perpendicular to the laser beam, so that the laser energy is converted between S polarization and P polarization; in the process that laser beams are reflected back and forth in the cavity, a part of laser energy is transmitted through the plano-concave high reflecting mirror 5 and vertically enters a polarization state detection device consisting of a quarter-wave plate 6 and an analyzer 7; the laser beam transmitted through the analyzer 7 is focused by the lens 8 and collected by the photodetector 9; turning off the laser and acquiring a ring-down signal I (t) through a detector 9; ring-down signal I (t) is formulated using a non-linear multi-parameter fitting method
The polarization state oscillation frequency omega caused by the stress birefringence can be obtained by fitting, and the stress birefringence optical path difference OPD can be expressed as
Wherein, λ is the laser wavelength of the light source 1, and c is the vacuum light speed; l is the cavity length of the resonant cavity, and the L is the L0Calculating (n-1) d; wherein L is0And calculating the stress sigma of the optical element by looking up the stress-optical constant C and the stress-optical formula sigma C × OPD of the optical material.
(2) The laser beam output by the light source 1 is TEM00The mode beam.
(3) The light transmission axis of the polarizer 2 can be adjusted according to the test requirement, so that the azimuth angle of the linearly polarized light emitted by the polarizer 2 is set at any determined angle between 0 and 180 degrees according to the test requirement.
(4) The optical resonant cavity formed by the plano-concave high reflecting mirrors 3 and 5 is a stable cavity, and the initial resonant cavity length L0Satisfies 0<L0Less than or equal to 2r, wherein r is the curvature radius of the concave surface of the plano-concave high reflecting mirror.
(5) The fast axis angle of the quarter-wave plate 6 can be adjusted according to the test requirement, so that the fast axis azimuth angle of the quarter-wave plate 6 is set at any determined angle between 0 and 180 degrees according to the test requirement.
(6) The light transmission axis of the analyzer 7 can be adjusted according to the test requirement, so that the azimuth angle of the linearly polarized light emitted by the analyzer 7 is set at any determined angle between 0 and 180 degrees according to the test requirement.
(7) The optical element is a parallel plane optical element, and the reflected light of the front surface and the back surface of the optical element does not overflow the optical resonant cavity.
(8) In the technical scheme, in order to conveniently collect ring-down signals, the output voltage of the photoelectric detector 9 can be monitored by adopting a threshold trigger circuit, and when the collected voltage exceeds a threshold set by the threshold trigger circuit, the laser beam incident into the resonant cavity is cut off.
(9) In the technical scheme, in order to conveniently turn off the laser beam incident into the resonant cavity, a square wave modulation semiconductor laser can be adopted, or a continuous helium-neon laser is matched with an electro-optical switch or an acousto-optical switch to turn off the laser beam.
Drawings
Fig. 1 is a schematic diagram of the implementation of the technical solution of the present invention.
Fig. 2 is a measurement result of a measurement sample without adding stress in the resonant cavity.
Fig. 3 shows the results of measurements on a sample of a square fused quartz substrate placed in the resonant cavity.
In fig. 1: 1 is He-Ne laser; 2 is a polarizer; 3 and 5 are plano-concave high reflecting mirrors; 4 is the optical element to be measured; 6 is a quarter wave plate; 7 is an analyzer; 8 is a focusing lens; 9 is a photoelectric detector; 10 is a data acquisition and processing computer; 11 is a threshold trigger circuit; 12 is an acousto-optic switch; and 13 is a diaphragm. In the figure, the solid line indicates the optical path and the broken line indicates the signal line.
Detailed Description
The method for measuring the micro stress of the optical element according to the present invention will be described in detail with reference to fig. 1, however, it should be understood that the drawings are provided only for better understanding of the present invention and they should not be construed as limiting the present invention. The specific implementation steps are as follows:
(1) and (5) constructing an initial cavity ring-down system. The xyz coordinate system shown in fig. 1 is defined as an experimental coordinate system, i.e. this is taken as a reference coordinate system in the experiment, wherein the xz direction is in the plane of the paper, and the y direction is the outgoing direction perpendicular to the plane of the paper.
a. The light source 1 and the acousto-optic switch 12 are adjusted so that the emergent beam of the acousto-optic switch is emitted along the z direction of the experimental coordinate system and vertically incident into the polarizer 2 through the diaphragm 13.
b. The polarizer 2 is rotated to enable the light transmission axis of the polarizer 2 to be parallel to the y axis, and at the moment, the azimuth angle of linearly polarized light emitted from the polarizer 2 is 90 degrees.
c. The plano-concave high reflecting mirrors 3 and 5, the sample 4 to be detected, the quarter-wave plate 6 and the analyzer 7 are moved away, and the focusing lens 8 and the photoelectric detector 9 are adjusted, so that the photoelectric detector 9 can detect all light emitted by the polarizer 2. The analyzer 7 is inserted and the analyzer 7 is rotated so that the signal detected by the photodetector 9 is zero. At this time, the linearly polarized light is emitted from the analyzer 7 with an azimuth angle of 0 degree.
d. The quarter-wave plate 6 is inserted into the optical path and the quarter-wave plate 6 is rotated so that its fast axis azimuth angle is 45 degrees.
e. The plano-concave high reflecting mirrors 3 and 5 are inserted to form an initial cavity, and the cavity length is adjusted to L0, at which time the emergent light signal of the initial cavity can be observed from the computer 10.
f. Setting the threshold of the threshold trigger circuit 11 to V0When the output voltage signal of the detector 9 is greater than V0The threshold trigger circuit 11 sends a trigger signal to the acousto-optic switch 12 and the computer 10. At this time, the acousto-optic switch 12 is turned off, the laser beam is blocked by the diaphragm 13, and the computer 10 acquires the ring-down signal I of the initial resonant cavity0(t) of (d). According to a single exponential model formula
Can well fit ring-down signal I0(t) ensuring that the initial cavity ring down system does not introduce interference.
(2) And (5) measuring the stress of the sample to be measured. And inserting a sample 4 to be measured into a resonant cavity formed by the plano-concave high reflecting mirrors 3 and 5, and adjusting the sample 4 to ensure that the surface of the sample 4 is parallel to the xy plane, namely, the laser is enabled to be vertically incident on the sample 4.
a. Setting the threshold of the threshold trigger circuit 11 to V1When the output voltage signal of the detector 9 is greater than V1The threshold circuit 11 sends a trigger signal to the acousto-optic switch 12 and the computer 10. At the moment, the acousto-optic switch 12 is turned off, the laser beam is shielded by the diaphragm 13, and the computer 10 acquires a test resonant cavity ring-down signal I1(t) of (d). Ring down signal I1(t) according to the formula
The polarization state oscillation frequency omega caused by the stress birefringence can be obtained by fitting, and the stress birefringence optical path difference OPD can be expressed as
Wherein λ is the wavelength of the laser of the light source 1, c is the speed of the vacuum light, and L is the length of the resonant cavity to be tested, and the formula L is L0Calculating (n-1) d; wherein L is0The stress sigma of the measuring point can be obtained by looking up the stress-optical constant C of the optical material and the stress-optical formula sigma C × OPD.
b. The linear polarization azimuth angle of the polarizer 2 is changed, and the step a is repeated to carry out multiple measurements and take an average value, so that the precision of the stress measurement value sigma can be improved.
In a word, the technical scheme provided by the invention has the advantages of simple system structure, simplicity and convenience in operation, nondestructive measurement, no influence of light source intensity fluctuation and the like, and compared with the traditional method for measuring stress of the S-Na rmont quarter-wave plate, the method has the advantages that the measurement precision is at least improved by three orders of magnitude, and the method is an excellent choice in the field of stress measurement of optical elements requiring high precision and high sensitivity.
Specific examples of the detecting device of the present invention are given below, and the specific examples are only for illustrating the present invention in detail and do not limit the scope of the claims of the present application.
Example 1
The sample to be tested in example 1 of the present invention was a square fused quartz substrate of 20mm by 20mm in thickness of 2 mm.
Fig. 2 is a measurement result of a measurement sample without adding stress in the resonant cavity. Wherein, black "o" in fig. 2 represents the amplitude of the ring-down signal obtained by collection; using solid lines with "+" brown to represent equations in a single exponential model
Fitting the obtained ring-down signal amplitude; the gray solid line is used to represent the ring down signal fit residual.
Fig. 3 shows the results of measurements on a sample of a square fused quartz substrate placed in the resonant cavity. Wherein, black "o" in fig. 3 represents the amplitude of the ring-down signal obtained by collection; using solid lines with "+" brown color to represent by formula
Fitting the obtained ring-down signal amplitude; the gray solid line is used to represent the ring down signal fit residual. The stress birefringence OPD was calculated by fitting to 0.0222 nm.
Claims (7)
1. A method for measuring micro stress of an optical element is characterized in that: the measuring device for realizing the measuring method is composed of a laser light source (1), a polarizer (2), a first plano-concave high reflecting mirror (3) and a second plano-concave high reflecting mirror (5), an optical element to be measured (4), a quarter-wave plate (6), an analyzer (7), a focusing lens (8) and a photoelectric detector (9); a beam of laser emitted by a laser source (1) forms a beam of linearly polarized light with a determined azimuth angle after passing through a polarizer (2) and vertically enters an optical resonant cavity, and the optical resonant cavity is a stable straight cavity formed by a first plano-concave high reflecting mirror (3) and a second plano-concave high reflecting mirror (5) which are the same; the polarized laser beam coupled into the optical resonant cavity is reflected back and forth in the cavity and is modulated by the stress birefringence of the optical element (4) to be measured, which is arranged in the cavity and is vertical to the laser beam, so that the laser energy is converted between S polarization and P polarization; in the process that laser beams are reflected back and forth in the resonant cavity, a part of laser energy is transmitted through the second plano-concave high reflecting mirror (5) and vertically enters the polarization state detection device consisting of the quarter-wave plate (6) and the analyzer (7); the laser beam transmitted through the analyzer (7) is collected by a focusing lens (8) and a photoelectric detector (9); turning off the laser light source (1) and acquiring a resonant cavity ring-down signal through a photoelectric detector (9) at the same time; inputting the collected ring-down signal I (t) into a computer for nonlinear fitting to obtain the birefringence optical path difference and stress magnitude caused by the stress of the optical element (4) to be measured; ring-down signal I (t) is formulated using a non-linear multi-parameter fitting method
The polarization state oscillation frequency omega caused by the stress birefringence can be obtained by fitting, and the stress birefringence optical path difference OPD can be expressed as
Wherein, lambda is the laser wavelength of the laser light source (1), and c is the vacuum light speed; l is the length of the optical resonant cavity, namely the vertical laser beam of the optical element (4) to be tested is placed in the optical resonant cavity, and the length is expressed by the formula L0Calculated cavity length of + (n-1) d, in said formula, L0The stress sigma of the optical element (4) to be measured can be calculated by looking up the stress-optical constant C and the stress-optical formula sigma-C × OPD of the material forming the optical element (4) to be measured and looking up the stress-optical constant C and the stress-optical formula sigma-C × OPD.
2. The method for measuring the micro stress of the optical element according to claim 1, wherein: the laser beam output by the laser light source (1) is TEM00The mode beam.
3. The method for measuring the micro stress of the optical element according to claim 1, wherein: the light transmission axis of the polarizer (2) can be adjusted according to the test requirement, so that the azimuth angle of the linearly polarized light emitted by the polarizer (2) is set at any determined angle between 0 and 180 degrees according to the test requirement.
4. The method for measuring the micro stress of the optical element according to claim 1, wherein: the optical resonant cavity formed by the first plano-concave high reflecting mirror (3) and the second plano-concave high reflecting mirror (5) is a stable cavity, and the length L of the resonant cavity0Satisfies 0<L0Is less than or equal to 2r, wherein r is the curvature radius of the concave surfaces of the first plano-concave high reflecting mirror (3) and the second plano-concave high reflecting mirror (5).
5. The method for measuring the micro stress of the optical element according to claim 1, wherein: the fast axis angle of the quarter-wave plate (6) can be adjusted according to the test requirement, so that the fast axis azimuth angle of the quarter-wave plate (6) is set at any determined angle between 0 and 180 degrees according to the test requirement.
6. The method for measuring the micro stress of the optical element according to claim 1, wherein: the light transmission axis of the analyzer (7) can be adjusted according to the test requirement, so that the azimuth angle of linearly polarized light emitted by the analyzer (7) is set at any determined angle between 0 and 180 degrees according to the test requirement.
7. The method for measuring the micro stress of the optical element according to claim 1, wherein: the optical element (4) to be measured is a parallel plane optical element, and the reflected light of the front surface and the back surface of the optical element (4) to be measured does not overflow the optical resonant cavity.
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| CN111386449B (en) * | 2019-03-22 | 2022-03-25 | 合刃科技（深圳）有限公司 | Stress analysis system for curved surface material inspection |
| CN112345465A (en) * | 2020-11-06 | 2021-02-09 | 电子科技大学 | Method for measuring thermal stress birefringence coefficient of laser crystal based on polarization cavity ring-down |
| CN113008426B (en) * | 2021-02-26 | 2022-02-11 | 江南大学 | Double-frequency quantitative photoelastic measuring instrument and measuring method |
| CN112986127B (en) * | 2021-03-18 | 2022-03-08 | 中国科学院高能物理研究所 | Calibration device for stress optical coefficient of transparent material |
| CN113155333B (en) * | 2021-04-22 | 2023-05-26 | 浙江清华柔性电子技术研究院 | Stress detection system, method and device |
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