CN105716756B - A kind of device for accurately measuring of optical material microstress spatial distribution - Google Patents
A kind of device for accurately measuring of optical material microstress spatial distribution Download PDFInfo
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- CN105716756B CN105716756B CN201610058860.XA CN201610058860A CN105716756B CN 105716756 B CN105716756 B CN 105716756B CN 201610058860 A CN201610058860 A CN 201610058860A CN 105716756 B CN105716756 B CN 105716756B
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- microstress
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- 230000003287 optical effect Effects 0.000 title claims abstract description 45
- 239000000463 material Substances 0.000 title claims abstract description 39
- 238000009826 distribution Methods 0.000 title claims abstract description 31
- 238000005259 measurement Methods 0.000 claims abstract description 31
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 238000007493 shaping process Methods 0.000 claims abstract description 6
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 239000000523 sample Substances 0.000 claims description 30
- 238000002834 transmittance Methods 0.000 claims description 6
- 238000000691 measurement method Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 14
- 238000013519 translation Methods 0.000 abstract description 11
- 239000013078 crystal Substances 0.000 abstract description 10
- 238000003908 quality control method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- 230000008033 biological extinction Effects 0.000 description 7
- 235000013399 edible fruits Nutrition 0.000 description 5
- 230000010287 polarization Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 235000011464 Pachycereus pringlei Nutrition 0.000 description 3
- 240000006939 Pachycereus weberi Species 0.000 description 3
- 235000011466 Pachycereus weberi Nutrition 0.000 description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000010606 normalization Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000013112 stability test Methods 0.000 description 2
- 229910021532 Calcite Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
Abstract
Device is accurately measured the invention discloses a kind of optical material microstress spatial distribution, the present apparatus is characterized in that the device using detection light and reference light double light design, eliminating laser light source fluctuation bring error and silicon photo diode temperature difference bring influences, use the rotation of elaborate servo motor driven analyzer to carry out curve fitting simultaneously, the inaccurate tremendous influence generated to phase difference of servo motor positioning is eliminated, to realize high-precision microstress spatial distribution measurement.Optical path is sequentially formed according to laser 1, laser beam splitter 2, chopper 3, the polarizer 4, reflective mirror 5, optical shaping device 6, sample 7, electronic two-dimensional micromotion translation stage 8, phase delay device 9, analyzer 10, servo motor 11, reflective mirror 12, silicon photo diode 13, binary channels lock-in amplifier 14, computer 15 in whole device, and is sequentially fixed on gun iron link frame 16.The present invention can be used for carrying out quality control to optical crystal material and its finished component.
Description
Technical field
The invention belongs to technology fields of measurement, the precise measurement of specifically a kind of pair of optical material microstress spatial distribution
Technology.
Background technique
The grown-in defects and post-production of most of optical crystal materials all can generate non-uniform Distribution in material internal
Microstress, which would generally cause the local of material birefringence to fluctuate (i.e. stress birfringence), to completed optical device
The optical homogeneity of part generates adverse effect.The microstress of optical material is difficult directly to measure, and can only be prolonged by measuring phase
Slow calculated stress birfringence is characterized indirectly.And fluctuation (the i.e. microstress for the stress birfringence spatially
Spatial distribution), the general measurement method using two-dimentional point by point scanning, this requires microstress measuring systems should have preferably
Precision, also there is very high measurement stability.Microstress spatial distribution detection technique is to glass, crystal, polymer
The quality analysis and control of the optical materials such as film, eyeglass, chip have very important significance.
2011, (interference of polarization measured crystal stress birfringence precision analysis to Xiao Haosu et al., " infrared and laser work
Journey ", volume 40,2 phases, page 272,2011) a kind of method based on interference of polarization measurement crystal stress birfringence is proposed, it should
Method avoids the measurement error that thickness of sample may cause using wedge shaped sample, but it uses extinction position spot measurement,
Therefore analyzer extinction angle measurement accuracy is relatively low；Furthermore the program can not eliminate laser power fluctuation and light probe
Influence of the temperature drift to measurement result, stability are poor.
2012, Hou Junfeng (a kind of precision measurement system and its implementation of Phase Retardation of Wave Plate, number of patent application
Are as follows: 201210009867.4) it proposes on the basis of the ellipsometer of whirl compensator using phase delay as unknown parameter simultaneous
Nonlinear equation calculates the phase delay of measurement sample.The mode of this method multimetering despite the use of improves precision, but its
Light source must be not used to the characterization of microstress using the continuous spectrums light sources such as xenon lamp, the unsuitable shaping of optical quality.In addition, should
Scheme is singly popped one's head in using monochromatic light road, and can not eliminate influences brought by light source power fluctuation and optical detector temperature drift, stability
It is bad.Therefore the program is not used to the measurement of microstress spatial distribution.
2013 and 2014, (semiconductor material micro-sized stress test macro, number of patent application were high and cold pine et al.
201310194074.9, Patent No.: 201410143013.4) the micro-sized stress test macro of material proposes to utilize photoelastic tune
Device processed tests the microstress spatial distribution of optical material, by the measurement orthogonal both direction of material surface
Light intensity reflection ratio difference and Light transmission rate difference measurements material stress intensity.Both methods is needed using expensive
Import light ball modulator, greatly improved its form system unit cost, furthermore the program does not account for laser power wave
Dynamic, light probe temperature drift, light talk the influence of modulator itself and outside environmental elements to measurement result.2014, room was built up
People proposes (a kind of that the detection device and method that light ball modulator and environment influence, number of patent application are eliminated based on dual-beam difference
201410670079.9) to enable the identical light of two pencil states by converting after the same light ball modulator through two photodetectors
At electric signal, difference processing is carried out via lock-in amplifier and signal processing system, light ball modulator itself is eliminated and environment becomes
Changing bring influences.The program although inhibit the extraneous factors such as laser, light ball modulator to tie measurement to a certain extent
The influence of fruit, but since it still uses two independent photodetectors, light probe temperature drift and individual difference pair can not be eliminated
The influence of measurement result, stability are bad.
2015, Tan Yidong et al. (a kind of optical material stress measurement system, number of patent application are as follows:
CN201510409605.0 a kind of scheme using double detector measurement optical material stress) is proposed, beam of laser is by laser
Device exocoel issues, and two beams is divided into after Amici prism, and received by two detectors, another beam of laser is by laser second
Chamber issues, and is radiated on sample, and be reflected back laser by former road by the reflectance coating of its bottom, and then laser carries out laser
Modulation, to measure the stress intensity of crystal different parts.The invention detects optical signal also with two light probes, can not disappear
Influence except light probe individual difference to measurement result, stability are poor.
Summary of the invention
That there are precision in existing microstress measurement scheme is low, at high cost, stability it is poor (vulnerable to laser power fluctuation,
Light probe temperature drift and individual difference influence) the disadvantages of.In view of the above-mentioned problems, the present invention provides a kind of low cost, high-precision, Gao Wen
Qualitative microstress spatial distribution measuring device.
The device for accurately measuring of a kind of optical material microstress spatial distribution provided by the invention, it is characterised in that: should
Device greatly reduces laser using the double light path list probe designs of single silicon photo diode while detectable signal light and reference light
Device power swing, light probe temperature drift and individual difference bring influence, and have high measurement stability；The device utilizes servo
The rotation of motor driven analyzer, by measuring and being fitted normalized transmittance with the change curve of offset angle, measures material indirectly
Expect the stress birfringence fluctuation of microcell, which greatly improved the measurement essence of microstress spatial distribution
Degree.
The device for accurately measuring of a kind of optical material microstress spatial distribution provided by the invention, it is characterised in that: should
Device is according to laser 1, laser beam splitter 2, chopper 3, the polarizer 4, reflective mirror 5, optical shaping device 6, sample 7, electronic two
Tie up fine motion translation stage 8, phase delay device 9, analyzer 10, servo motor 11, reflective mirror 12, silicon photo diode 13, binary channels lock
Phase amplifier 14, computer 15 sequentially form optical path, and are sequentially fixed on gun iron link frame 16.
Compared with prior art, apparatus of the present invention core light exploring block is all using common photoelectric component, cost compared with
It is low；Using the double light path list probe designs of single silicon photo diode while detectable signal light and reference light, laser is greatly reduced
Device power swing, light probe temperature drift and individual difference bring influence, and have high measurement stability；It is driven using servo motor
Dynamic analyzer rotation, by measuring and being fitted normalized transmittance with the change curve of offset angle, measures material domain indirectly
Stress birfringence fluctuation, which greatly improved the measurement accuracy of microstress spatial distribution.
Detailed description of the invention
Fig. 1 is the basic principle structural schematic diagram of optical material microstress spatial distribution measuring device of the present invention.
Fig. 2 is the data fitted figure of optical material microstress spatial distribution measuring device of the present invention.
Fig. 3 is the stability test figure that lithium columbate crystal is measured using apparatus of the present invention.
Fig. 4 is that a kind of embodiment (example 1) of optical material microstress spatial distribution measuring device of the present invention detects knot
Fruit figure.
Fig. 5 is that a kind of embodiment (example 2) of optical material microstress spatial distribution measuring device of the present invention detects knot
Fruit figure.
Fig. 6 is that a kind of embodiment (example 3) of optical material microstress spatial distribution measuring device of the present invention detects knot
Fruit figure.
Specific embodiment
Below with reference to embodiment and attached drawing, the present invention will be further described.
A kind of device for accurately measuring of optical material microstress spatial distribution disclosed by the invention, in whole device according to
Laser 1, laser beam splitter 2, chopper 3, the polarizer 4, reflective mirror 5, optical shaping device 6, sample 7, electronic two-dimensional micromotion are flat
Moving stage 8, phase delay device 9, analyzer 10, servo motor 11, reflective mirror 12, silicon photo diode 13, binary channels lock-in amplifier
14, computer 15 sequentially forms optical path, and is sequentially fixed on gun iron link frame 16.
It is 400-700nm that laser, which requires its wave-length coverage, and power 0.5-5.5mW, monochromaticjty is less than ± 1nm, copped wave
The chopping frequency in two channels of device frequency should all be greater than the frequency 50Hz of fluorescent lamp, and the polarizer and analyzer material are high quality
Micarex, calcite or Iceland spar.Institute's test specimens are necessary for transparent optical crystal and have birefringent phenomenon.The polarizer and inspection
The extinction ratio of inclined device should be greater than 1: 500.Objective table is electronic two-dimensional micromotion translation stage, and precision should be better than 3 μm.
In summary, it is contemplated that the cost of each element and the required precision of measurement, the preferred range of components are as follows: swash
Light device uses wavelength for the laser of 400-700nm, power 1-3mW, and monochromaticjty should be less than ± 0.1nm, and the frequency of chopper is
150-700Hz, the polarizer and analyzer material are the Iceland spar of high quality.Extinction ratio between the polarizer and analyzer should be greater than
1: 1000, objective table is electronic two-dimensional micromotion translation stage, and resolution ratio should be all in optical path between 0.1 μm -1 μm
Optical element and electronic device are each attached on gun iron link frame 16, ensure that the correct propagation and measurement accuracy of light.
The working principle of apparatus of the present invention are as follows: the present invention is based on Phase Compensations to the space of optical material microstress
Distribution measures.Light source issues the two beam laser that laser is divided into same polarization, isocandela by laser beam splitter in the present invention,
A branch of is reference light IR, a branch of for detection light Is.After the chopped device of two-beam is modulated into different frequency, reference light is straight after reflection
Tap into light probe, and detect light then pass through the polarizer, optical shaping device etc. to light carry out polarization and wavefront adjust, subsequently into
Sample detects microstress, finally enters light probe via phase delay device and analyzer.Optical probe signal is locked via binary channels
Phase amplifier extracts reference light and detection optical signal and provides normalization light strong signal (I=Is/IR), input computer is counted
According to processing and record.By phase compensation principle: normalized transmittance T=1/2 [1 ± sin (± 2 β of δ)] (wherein T=I/I0, I0For
Maximum normalization light strong signal obtained by system, δ are phase delay, and β is that analyzer rotates radian, i.e. offset angle) T is β
Function T (β), δ be the functional parameter.Computer-controlled servo motor rotates analyzer, measures normalized transmittance T with compensation
The variation relation of angle beta ----function curve T (β), carrying out least square method fitting to the curve later can be obtained parameter phase
Postpone δ, and birefringence n can be found out by formula δ=2 π d Δ n/ λ.Computer by electronic two-dimensional micromotion translation stage to sample into
Row scanning survey can provide fluctuation of the optical material birefringence n on two-dimensional space, the i.e. spatial distribution map of microstress.
It is given below the specific embodiment of detection device of the present invention, specific embodiment is only used for that the present invention will be described in detail, and
The protection scope of the claim of this application is not limited.
Example 1
A kind of device for accurately measuring of optical material microstress spatial distribution is designed, each component part of the device is specifically joined
Number is as follows: 1 wavelength of laser light source is 632.8nm, and power 1mW, monochromaticjty is less than ± 0.1nm；2 reference light of chopper and spy
Survey light modulation frequency is 350 and 700Hz；The polarizer and analyzer material are Iceland spar；Sample 7 is lithium columbate crystal；The polarizer
Extinction ratio with analyzer is 1: 1000；The translation resolution of electronic two-dimensional micromotion translation stage 8 is 0.1 μm；
Example 2
A kind of device for accurately measuring of optical material microstress spatial distribution is designed, each component part of the device is specifically joined
Number is as follows: 1 wavelength of laser light source is 514.5nm, and power 2mW, monochromaticjty is less than ± 0.1nm；2 reference light of chopper and spy
Survey light modulation frequency is 200 and 400Hz；The polarizer and analyzer material are Iceland spar；Sample 7 is sapphire crystal；The polarizer
Extinction ratio with analyzer is 1: 1500；The translation resolution of electronic two-dimensional micromotion translation stage 8 is 0.5 μm
Example 3
A kind of device for accurately measuring of optical material microstress spatial distribution is designed, each component part of the device is specifically joined
Number is as follows: 1 wavelength of laser light source is 488.0nm, and power 3mW, monochromaticjty is less than ± 0.1nm；2 reference light of chopper and spy
Survey light modulation frequency is 150 and 300Hz；The polarizer and analyzer material are Iceland spar；Sample 7 is lithium tantalate；The polarizer
Extinction ratio with analyzer is 1: 2500；The translation resolution of electronic two-dimensional micromotion translation stage 8 is 1 μm；
Microstress detection (referring to example 1) is carried out using fixed area of the detection device of the present invention to lithium niobate sample,
Normalized transmittance T as shown in Figure 2 is obtained with the function curve T (β) and least square method curve matching knot of offset angle β
Fruit, it is 52.35 × 10 by being calculated birefringent that fitting similarity R-square value, which is 0.994,-6.The numerical value is swept with two dimension
The case where fluctuation for retouching spatially characterizes microstress spatial distribution, thus the birefringence measurement value same measurement point with
The fluctuation (stability) of time is then most important.Fig. 3 provides the birefringent stability test curve of single-point of lithium niobate sample, is surveyed
Fluctuation of the specific refractivity within 3 hours is less than 2 × 10-7, stability is high.
Microstress spatial distribution detection (referring to example 1) has been carried out to lithium niobate sample using detection device of the present invention,
Obtain stress birfringence space wave cardon as shown in Figure 4.
Microstress spatial distribution detection (referring to example 2) has been carried out to sapphire samples using detection device of the present invention,
Obtain stress birfringence space wave cardon as shown in Figure 5.
Microstress spatial distribution detection (referring to example 3) has been carried out to lithium tantalate sample using detection device of the present invention,
Obtain stress birfringence space wave cardon as shown in Figure 6.
For specific example described above to technical solution of the present invention, implementing method has been further detailed description, Ying Li
Solution, above example are not solely used for the present invention, all equal modifications carried out within the spirit and principles in the present invention, etc.
Effect replacement, improvement etc. should be within protection scope of the present invention.
Claims (1)
1. a kind of device for accurately measuring of optical material microstress spatial distribution, it is characterised in that: the device uses single silicon
The double light path list probe designs of optical diode while detectable signal light and reference light greatly reduce laser power fluctuation, light
Temperature drift of popping one's head in and individual difference bring influence, and have high measurement stability；The device drives analyzing using servo motor
Device rotation measures the stress of material domain by measuring and being fitted normalized transmittance with the change curve of offset angle indirectly
The measurement accuracy of microstress spatial distribution greatly improved in birefringent fluctuation, the multi-point fitting measurement method, the device according to
Laser 1, laser beam splitter 2, chopper 3, the polarizer 4, reflective mirror 5, optical shaping device 6, sample 7, electronic two-dimensional micromotion are flat
Moving stage 8, phase delay device 9, analyzer 10, servo motor 11, reflective mirror 12, silicon photo diode 13, binary channels lock-in amplifier
14, computer 15 sequentially forms optical path, and is sequentially fixed on gun iron link frame 16.
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| CN201610058860.XA CN105716756B (en) | 2016-01-26 | 2016-01-26 | A kind of device for accurately measuring of optical material microstress spatial distribution |
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| CN107228828A (en) * | 2017-07-14 | 2017-10-03 | 济南快谱光电技术有限公司 | The method of testing and its detection means of crystal optics uniformity |
| CN107389236B (en) * | 2017-07-31 | 2018-07-10 | 中国人民解放军国防科学技术大学 | The electric propulsion field microthrust transient measurement system measured based on Stokes' parameter |
| CN108387333A (en) * | 2018-01-04 | 2018-08-10 | 内蒙古工业大学 | A kind of silicon thin film material stress detecting system |
| CN109883586B (en) * | 2019-02-26 | 2021-05-11 | 山东大学 | Lithium niobate crystal pressure sensor based on polarization interference and application thereof |
| CN109781317B (en) * | 2019-03-11 | 2020-10-16 | 山东大学 | Optical glass stress detection system and detection method |
| WO2020191545A1 (en) * | 2019-03-22 | 2020-10-01 | 合刃科技（深圳）有限公司 | System for analyzing stress of curved detection sample |
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| CN1558212A (en) * | 2004-01-17 | 2004-12-29 | 宁波大学 | High precision measuring device and method for angle of rotation |
| CN203132813U (en) * | 2012-12-10 | 2013-08-14 | 中国科学院光电研究院 | Apparatus for testing transmittance of optical lens |
| CN103809101A (en) * | 2014-02-13 | 2014-05-21 | 中国科学院半导体研究所 | Light-induced abnormal Hall effect variable temperature measuring device and measuring method |
| CN204043824U (en) * | 2014-03-25 | 2014-12-24 | 成都光明光电股份有限公司 | Inside glass stress apparatus for quantitatively |
| CN104535500A (en) * | 2014-12-19 | 2015-04-22 | 中国科学院上海光学精密机械研究所 | System parameter calibration method for imaging ellipsometer |
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|---|---|---|---|---|
| US4629323A (en) * | 1982-07-23 | 1986-12-16 | Tokyo Shibaura Denki Kabushiki Kaisha | Birefringence type measuring device |
| CN1558212A (en) * | 2004-01-17 | 2004-12-29 | 宁波大学 | High precision measuring device and method for angle of rotation |
| CN203132813U (en) * | 2012-12-10 | 2013-08-14 | 中国科学院光电研究院 | Apparatus for testing transmittance of optical lens |
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Inventor after: Yan Wenbo Inventor after: Li Shaobei Inventor after: Chen Hongjian Inventor after: Chen Lipin Inventor after: Sun Shihao Inventor after: Du Chengwei Inventor before: Li Shaobei Inventor before: Yan Wenbo Inventor before: Chen Hongjian Inventor before: Chen Lipin Inventor before: Sun Shihao Inventor before: Du Chengwei |
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