CN108918457A - The device and method that THz wave modulates laser spectral intensity measurement electro-optic coefficient - Google Patents
The device and method that THz wave modulates laser spectral intensity measurement electro-optic coefficient Download PDFInfo
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
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- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
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Abstract
The invention belongs to photoelectric detection technology field, to propose a kind of method that THz wave modulates the non-contact measurement electro-optic coefficient of maximum laser spectral intensity, the accurate measurement of electro-optic coefficient is realized.Thus, the technical solution adopted by the present invention is that, the device and method that THz wave modulates laser spectral intensity measurement electro-optic coefficient, utilize the pump-and-probe technique in terahertz time-domain spectrum technology, the THz wave of generation and exploring laser light are focused on crystal detection simultaneously, at this time, laser is as detectable signal, THz wave is as modulated signal, it is measured respectively by spectrometer with the presence of THz wave and the maximum intensity knots modification without exploring laser light spectrum in the presence of THz wave, then releases the corresponding electro-optic coefficient of sample by the way that calculation formula is counter.Present invention is mainly applied to Photoelectric Detection occasions.
Description
Technical field
The invention belongs to photoelectric detection technology fields, and in particular to a kind of THz wave modulation laser spectral intensity measurement electric light
The method of coefficient.
Background technique
Electro-optic crystal is the solid material with electrooptic effect, has been widely used in laser technology and Terahertz Technology
Field, as Electro-optical Modulation, Q-switch, terahertz generation and detector etc..The size of electrooptic effect is proportional to the electricity of electrooptical material
Backscatter extinction logarithmic ratio, thus to the Efficient Characterization of the electro-optic coefficient of electro-optic crystal to the design and use of these materials have directive significance and
Practical value.
The electro-optic coefficient technology of existing measurement electrooptical material is divided into following several substantially：Single beam ellipsometry method, F-P interference
The methods of method, mark-Zenden interferometry, attenuated total reflection, electrochromism method [1-5].It is all to treat test sample in the prior art
Product are by the way of applied voltage, it is therefore desirable to apply (transparent) electrode in sample to be tested optical direction or vertical direction, and
External offer can be applied to the high voltage power supply of sample half-wave voltage.Therefore these methods have following deficiency：(1) sample is increased
Prepare difficulty.Applying electrode to sample must be in close contact with sample to be tested, this to the preparation precision of sample (such as：Sample is thick
Degree, the two sides depth of parallelism, surface smoothness) propose requirements at the higher level；(2) technology for preparing electrode is increased.In addition to sample to be tested sheet
The preparation of body will also design and prepare corresponding electrode.Whether the difficulty of measurement process is both increased using metal or plated film
Degree；(3) external high voltage power supply is needed.The voltage that offer external power supply is generally required in the above method meets the half-wave electricity of material
Pressure, this not only adds the expenses of whole measuring device, also have high voltage irreversible damage caused by sample (as punctured
Deng) risk；(4) apply influence of the electrode process to sample itself natural characteristic.Such as：Using transparent electrode (optical direction)
When to detection light influence, including increase loss, introduce phase difference and deflection angle etc.；It is (vertical using plating metal electrode
Optical direction) when, then change the boundary condition of sample, including waveguide effect and contact stress；According to direct fashion of extrusion
Sample and electrode are put together, then other than additional stress, if there are air films for centre, will cause sample electric light to be measured
Coefficient increases [6] extremely.
In conclusion the method for existing contact electric pole type measurement electro-optic coefficient, although measuring principle cuts both ways,
All there is the above problems being difficult to avoid that, this not only adds the complexity of entire measurement process, attached extra charge, and
And the systematic error introduced is difficult to eliminate, and is easily destroyed sample etc..
[1]Wang F,Furman E,Haertling G H.Electro‐optic measurements of thin‐
film materials by means of reflection differential ellipsometry.Journal of
Applied Physics,1995,78(1):9-15.
[2]Prêtre P,Wu LM,Hill R A,et al.Characterization of electro-optic
polymer films by use of decal-deposited reflection Fabry–Perot
microcavities.Journal of the Optical Society of America B-Optical Physics,
1998,15(1):379-392.
[3]Kang B,Rhee B K,Joo G T.Variation of electro-optic coefficients in
MgO-doped LiNbO3single crystals.Materials Letters,2006,60(17):2306-2308.
[4]Jiang Y,Cao Z,Shen Q,et al.Improved attenuated-total-reflection
technique for measuring the electro-optic coefficients of nonlinear optical
polymers.J.Opt.Soc.Am.B,2000,17(5):805-808.
[5]Page R H,Jurich M C,Reck B,et al.Electrochromic and optical
waveguide studies of corona-poled electro-optic polymer films,J.Opt.Soc.Am.B,
1990,7(7):1239-1250.
[6]Quilty J W.Spurious electro-optic coefficients inferred from
modulation ellipsometry measurements in the presence of an air cavity.Optics
Communications,2017,389:283-289。
Summary of the invention
In order to overcome the deficiencies of the prior art, the present invention is directed to propose a kind of THz wave modulates the non-of maximum laser spectral intensity
The method of contact type measurement electro-optic coefficient realizes the accurate measurement of electro-optic coefficient.For this purpose, the technical solution adopted by the present invention is that,
The method that THz wave modulates laser spectral intensity measurement electro-optic coefficient, utilizes the pumping-detection in terahertz time-domain spectrum technology
System focuses on the THz wave of generation and exploring laser light on crystal detection simultaneously, at this point, laser is as detectable signal, too
Hertz wave is measured respectively as modulated signal, by spectrometer with the presence of THz wave and without exploring laser light in the presence of THz wave
The maximum intensity knots modification of spectrum, then the corresponding electro-optic coefficient of sample is released by the way that calculation formula is counter.
In an example, specific steps are refined as：
1. the femtosecond pulse that the femtosecond laser source output wavelength using linear polarization is 1040nm, laser pulse is by described
Beam splitter；
2. femtosecond laser is divided into two beams, score ratio 10 by the beam splitter:1, wherein strong is a branch of as pump
Pu light, weak is a branch of as detection light；
3. the pump light is incident on THz wave and generates on crystal, the THz wave of linear polarization is generated；
4. THz wave peak electric field strength ETHzCan by high Lay box terahertz detector (Golay cell) measure and when
It obtains after the electric field measurement of domain, or is first obtained by counter push away after the template crystal measurement of known electro-optic coefficient γ；
5. the THz wave is by paraboloidal mirror to converging on electro-optic crystal to be measured；
6. the detection light by delay line and the guarantee of half wave plate with THz wave simultaneously, arrive with polarized incident
On electro-optic crystal to be measured；
Forward and backward average maximum spy is modulated through THz wave 7. being measured after electro-optic crystal to be measured with the spectrometer 8
Survey the knots modification Δ I of spectral intensity；
8. the modulation laser intensity relationship that the electro-optic coefficient of electro-optic crystal and additional THz electric field generate：
In formula, λ0It is the wavelength for detecting light, Δ I is the average maximum of detection light spectrum when measuring with and without THz wave
Knots modification, detection light when I is no THz wave are averaged spectral intensity, n0Crystal to be measured is in the refractive index of detection optical wavelength, and γ is then
For the crystal electro-optic coefficient acquired, d is the thickness of crystal to be measured, ETHzFor the electric field strength of known THz wave.Measure Δ
I and I value substitutes into the electro-optic coefficient that the formula calculates crystal to be measured.
THz wave modulate laser spectral intensity measurement electro-optic coefficient device, by linear polarization femtosecond laser light source, beam splitter,
Half wave plate, THz wave generate crystal, sample to be tested crystal, delay line and spectrometer and constitute, the femtosecond laser
The femtosecond pulse of source output is divided into two beams by the beam splitter, and wherein strong a branch of of light intensity is used as pump light, and weak is a branch of
As detection light；Pump light is incident on THz wave and generates on crystal, generates THz wave；The THz wave peak electric field strength
ETHzIt can be measured by Golay cell and be calculated after time domain electric field measurement, or first have the template of known electro-optic coefficient γ brilliant
Counter push away obtains after bulk measurement；The THz wave is by paraboloidal mirror to converging on electro-optic crystal to be measured；The detection
Light by delay line and half wave plate and THz wave simultaneously, on polarized incident to electro-optic crystal to be measured；With described
Spectrometer measures the knots modification Δ that forward and backward average maximum probe spectral intensity is modulated through THz wave after electro-optic crystal to be measured
I；The modulation laser intensity relationship that the electro-optic coefficient of electro-optic crystal and additional THz electric field generate：
In formula, λ0The wavelength for detecting light, Δ I be average detection spectral intensity when measuring with and without THz wave most
Big knots modification, average detection spectral intensity when I is no THz wave, n0Refractive index of the crystal to be measured in detection optical wavelength, γ
It is then the crystal electro-optic coefficient acquired, d is the thickness of crystal to be measured, ETHzFor the electric field strength of known THz wave, measure
Δ I and I value substitutes into the electro-optic coefficient that the formula calculates crystal to be measured.
The features of the present invention and beneficial effect are：
Compared with existing photoelectric coefficient detection method, THz wave modulates the non-contact measurement electric light system of laser spectral intensity
Several methods has following features：(1) this method is not necessarily to plus high-voltage field, but uses the THz wave of low energy as tune
Electric field processed, therefore sample will not be damaged；(2) electrode process applied to sample is eliminated, therefore is avoided between different material
It is in contact and error brought by Precision Machining sample and the stress or boundary condition that introduce, measures more acurrate；(3) it is connect using non-
Touching measurement, it is not high to the shape and required precision of sample；(4) maximum change of laser spectral intensity is directly measured using spectrometer
Amount, compared with the knots modification for directly measuring THz wave electric field amplitude, with response is fast, noise is low, the resolving accuracy of measurement is high
Advantage；(5) this method equipment and simple process do not need high voltage power supply, lock-in amplifier (if known THz wave electric-field strength
Degree) etc. high-end devices and electrode machining process, it is easy to operation to reduce costs.
Detailed description of the invention：
Fig. 1 THz wave modulates the system structure and original of the non-contact measurement electro-optic coefficient method of maximum laser spectral intensity
Reason figure.Figure label is respectively：1. linear polarization femtosecond laser source, 2. beam splitters, 3. THz waves generate crystal, 4. parabolic lens
It is right, 5. delay lines, 6. half wave plates, 7. electro-optic crystals to be measured, 8. spectrometers.
Specific embodiment
In recent years, with the rapid development of ultrafast laser technique, the development of ultrafast THz source has greatly been pushed, especially
It is the extensive use of terahertz time-domain spectrum technology, has become in materials science field study of various material in terahertz wave band
Time domain electric field and spectral characteristic powerful.THz wave can modulate semiconductor crystal, be incident on detection crystalline substance to change
Light phase in body is poor, therefore semiconductor crystal is widely used in terahertz time-domain electric field detecting.The principle is exactly utilized,
Terahertz spectrum technology can be used for measurement electro-optical medium in the electro-optic coefficient of the wave band.The present invention proposes a kind of THz wave
The method for modulating the non-contact measurement electro-optic coefficient of maximum laser spectral intensity, so as to avoid above-mentioned the deficiencies in the prior art.
The technical solution adopted by the present invention：Using the pump-and-probe technique in terahertz time-domain spectrum technology, by generation
THz wave and exploring laser light focus on crystal detection simultaneously.At this point, laser is as detectable signal, THz wave is as modulation
Signal, is measured by spectrometer with the presence of THz wave and the maximum intensity without exploring laser light spectrum in the presence of THz wave respectively
Knots modification, then the corresponding electro-optic coefficient of sample is released by the way that calculation formula is counter.Its principle is, when THz wave is as modulated electric fields
When being incident in sample to be tested, the refractive index of sample changes, and leads to the phase delay of exploring laser light, thus to the saturating of laser
Light intensity is crossed to be modulated.Due to when incident THz wave electric field strength remains unchanged, the modulation of the light intensity of exploring laser light
Degree relationship proportional to the electro-optic coefficient of sample, therefore in the case where known THz wave electric field strength, can use,
The anti-sample of releasing of the relative increment of exploring laser light intensity when no terahertz wave signal is in the electro-optic coefficient of laser wavelength.We
Method is measured especially suitable for the electro-optic coefficient of the electro-optical medium sensitive to terahertz wave band response.THz wave plays outer herein
The effect of added electric field only generates maximum phase delay in its maximum field amplitude, measures to obtain resolution ratio and signal-to-noise ratio highest.
Entire experimental provision generates crystal by linear polarization femtosecond laser light source, beam splitter, half wave plate, THz wave, to test sample
Product crystal, delay line and spectrometer are constituted.
Present invention be described in more detail with specific example with reference to the accompanying drawing.
A kind of non-contact measurement electro-optic coefficient method using THz wave modulation maximum laser spectral intensity, system knot
Structure and schematic diagram are as shown in Figure 1, used device includes 1. linear polarization femtosecond laser sources, 2. beam splitters, the production of 3. THz waves
Raw crystal, 4. parabolic lens pair, 5. delay lines, 6. half wave plates, 7. electro-optic crystals to be measured, 8. spectrometers.It is characterized in that
This method includes the following steps：
1. 1 output wavelength of linear polarization femtosecond laser source is the femtosecond pulse of 1040nm, described in laser pulse passes through
Beam splitter 2；
2. femtosecond laser is divided into two beams, score ratio 10 by the beam splitter 2:1.Wherein strong a branch of be used as pumps
Pu light, weak is a branch of as detection light；
3. the pump light is incident on THz wave and generates on crystal 3, the THz wave with polarization is generated；
4. THz wave peak electric field strength ETHzIt can be measured by Golay cell and be calculated after time domain electric field measurement
It arrives, or first there is counter push away after the template crystal measurement of known electro-optic coefficient γ to obtain；
5. the THz wave converges on electro-optic crystal 7 to be measured by paraboloidal mirror to 4；
6. the detection light by delay line 5 and half wave plate 6 and THz wave simultaneously, with polarized incident to
It surveys on electro-optic crystal 7；
Forward and backward average maximum spy is modulated through THz wave 7. being measured after electro-optic crystal 7 to be measured with the spectrometer 8
Survey the knots modification Δ I of spectral intensity；
8. the modulation laser intensity relationship that the electro-optic coefficient of electro-optic crystal and additional THz electric field generate：
In formula, λ0It is the wavelength for detecting light, Δ I is the average maximum of detection light spectrum when measuring with and without THz wave
Knots modification, the average intensity of detection light spectrum when I is no THz wave, n0Crystal to be measured detection optical wavelength refractive index,
γ is then the crystal electro-optic coefficient acquired, and d is the thickness of crystal to be measured, ETHzFor the electric field strength of known THz wave.Measurement
Δ I and I value out substitute into the electro-optic coefficient that the formula calculates crystal to be measured.
Claims (3)
1. a kind of method of THz wave modulation laser spectral intensity measurement electro-optic coefficient, characterized in that utilize terahertz time-domain frequency
Pump-and-probe technique in spectral technology focuses on the THz wave of generation and exploring laser light on crystal detection simultaneously, at this point,
As detectable signal, THz wave is measured as modulated signal, by spectrometer with the presence of THz wave and without too laser respectively
The maximum intensity knots modification of exploring laser light spectrum in the presence of Hertz wave, then the corresponding electric light system of sample is released by the way that calculation formula is counter
Number.
2. the method for THz wave modulation laser spectral intensity measurement electro-optic coefficient as described in claim 1, characterized in that one
In a example, specific steps are refined as：
1. the femtosecond pulse that the femtosecond laser source output wavelength using linear polarization is 1040nm, laser pulse pass through the beam splitting
Mirror；
2. femtosecond laser is divided into two beams, score ratio 10 by the beam splitter:1, wherein it is strong it is a branch of be used as pump light,
Weak is a branch of as detection light；
3. the pump light is incident on THz wave and generates on crystal, the THz wave of linear polarization is generated；
4. THz wave peak electric field strength ETHzIt can be measured by high Lay box terahertz detector (Golay cell) and time domain is electric
It obtains after field measurement, or is first obtained by counter push away after the template crystal measurement of known electro-optic coefficient γ；
5. the THz wave is by paraboloidal mirror to converging on electro-optic crystal to be measured；
6. the detection light is guaranteed with THz wave simultaneously, with polarized incident by delay line and half wave plate to be measured
On electro-optic crystal；
7. being measured after electro-optic crystal to be measured with the spectrometer 8 and modulating forward and backward average maximum probe light through THz wave
The knots modification Δ I of spectral intensity；
8. the modulation laser intensity relationship that the electro-optic coefficient of electro-optic crystal and additional THz electric field generate：
In formula, λ0It is the wavelength for detecting light, Δ I is the average maximum change of detection light spectrum when measuring with and without THz wave
Amount, detection light when I is no THz wave are averaged spectral intensity, n0For crystal to be measured in the refractive index of detection optical wavelength, γ is then to ask
The crystal electro-optic coefficient obtained, d are the thickness of crystal to be measured, ETHzFor the electric field strength of known THz wave.Measure Δ I and I
Value, substitutes into the electro-optic coefficient that the formula calculates crystal to be measured.
3. a kind of device of THz wave modulation laser spectral intensity measurement electro-optic coefficient, characterized in that by linear polarization femtosecond laser
Light source, beam splitter, half wave plate, THz wave generate crystal, sample to be tested crystal, delay line and spectrometer and constitute, institute
The femtosecond pulse for the femtosecond laser source output stated is divided into two beams by the beam splitter, and wherein strong a branch of be used as of light intensity pumps
Light, weak is a branch of as detection light；Pump light is incident on THz wave and generates on crystal, generates THz wave；The THz wave
Peak electric field strength ETHzIt can be measured by Golay cell and be calculated after time domain electric field measurement, or first have known electric spectrum
Counter push away obtains after the template crystal measurement of number γ；The THz wave is by paraboloidal mirror to converging to electro-optic crystal to be measured
On；The detection light by delay line and half wave plate and THz wave simultaneously, with polarized incident to electric light crystalline substance to be measured
On body；It is measured after electro-optic crystal to be measured with the spectrometer and modulates forward and backward average maximum probe spectrum through THz wave
The knots modification Δ I of intensity；The modulation laser intensity relationship that the electro-optic coefficient of electro-optic crystal and additional THz electric field generate：
In formula, λ0It is the wavelength for detecting light, Δ I is the maximum change of average detection spectral intensity when measuring with and without THz wave
Amount, average detection spectral intensity when I is no THz wave, n0For crystal to be measured in the refractive index of detection optical wavelength, γ is then to ask
The crystal electro-optic coefficient obtained, d are the thickness of crystal to be measured, ETHzFor the electric field strength of known THz wave, Δ I and I are measured
Value, substitutes into the electro-optic coefficient that the formula calculates crystal to be measured.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109975209A (en) * | 2019-04-19 | 2019-07-05 | 荧飒光学科技（上海）有限公司 | Decaying for Fourier transform spectrometer, is all-trans injection device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4618819A (en) * | 1984-03-27 | 1986-10-21 | The University Of Rochester | Measurement of electrical signals with subpicosecond resolution |
| US20080128618A1 (en) * | 2006-09-27 | 2008-06-05 | Anis Rahman | Dendrimer Based Electro-Optic Sensor |
| CN101726362A (en) * | 2009-11-23 | 2010-06-09 | 首都师范大学 | Terahertz polarization analyzer and terahertz polarization measurement method |
| CN102621110A (en) * | 2012-03-13 | 2012-08-01 | 中国科学院上海光学精密机械研究所 | Electrooptic coefficient measuring device |
| CN103091255A (en) * | 2013-01-15 | 2013-05-08 | 首都师范大学 | Terahertz time-space resolution imaging system, imaging method and application thereof |
| CN103728021A (en) * | 2013-12-19 | 2014-04-16 | 南京邮电大学 | Spectrum measurement device based on electro-optical effect and spectrum measurement method thereof |
-
2018
- 2018-04-27 CN CN201810394491.0A patent/CN108918457A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4618819A (en) * | 1984-03-27 | 1986-10-21 | The University Of Rochester | Measurement of electrical signals with subpicosecond resolution |
| US20080128618A1 (en) * | 2006-09-27 | 2008-06-05 | Anis Rahman | Dendrimer Based Electro-Optic Sensor |
| CN101726362A (en) * | 2009-11-23 | 2010-06-09 | 首都师范大学 | Terahertz polarization analyzer and terahertz polarization measurement method |
| CN102621110A (en) * | 2012-03-13 | 2012-08-01 | 中国科学院上海光学精密机械研究所 | Electrooptic coefficient measuring device |
| CN103091255A (en) * | 2013-01-15 | 2013-05-08 | 首都师范大学 | Terahertz time-space resolution imaging system, imaging method and application thereof |
| CN103728021A (en) * | 2013-12-19 | 2014-04-16 | 南京邮电大学 | Spectrum measurement device based on electro-optical effect and spectrum measurement method thereof |
Non-Patent Citations (2)
| Title |
|---|
| PAUL C. M. PLANKEN 等: "Measurement and calculation of the orientation dependence of terahertz pulse detection in ZnTe", 《J. OPT. SOC. AM. B》 * |
| 朱劲松 等: "《晶体物理研究方法》", 31 December 1990 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109975209A (en) * | 2019-04-19 | 2019-07-05 | 荧飒光学科技（上海）有限公司 | Decaying for Fourier transform spectrometer, is all-trans injection device |
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Application publication date: 20181130 |
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