CN107644949B - Method for forming inorganic thin layer on OLED - Google Patents
Method for forming inorganic thin layer on OLED Download PDFInfo
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- CN107644949B CN107644949B CN201610689247.8A CN201610689247A CN107644949B CN 107644949 B CN107644949 B CN 107644949B CN 201610689247 A CN201610689247 A CN 201610689247A CN 107644949 B CN107644949 B CN 107644949B
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Abstract
The invention relates to a method for forming an inorganic thin layer on an OLED, in particular to a method for forming an aluminum oxide thin film on an organic light-emitting diode substrate by an atomic layer deposition method, which comprises the following steps: 1) installing a moisture removing trap on an exhaust line for exhausting gas in a vacuum chamber provided with a process gas supply unit and a process gas exhaust unit; 2) preparing a substrate on which an organic light emitting diode is formed; 3) carrying the substrate to the interior of the vacuum chamber; 4) removing moisture in the vacuum chamber by opening a gate valve installed at a front of the moisture removal trap; 5) to use H2Forming an alumina film on the substrate by an atomic deposition method with O as a process gas; and 6) removing moisture in the vacuum chamber in which the thin film deposition process is completed by opening a gate valve installed at the front of the moisture removal trap.
Description
Technical Field
The present invention relates to a method of forming an alumina thin film on an organic light emitting diode substrate, and more particularly, to a method of forming an alumina thin film on an organic light emitting diode substrate in an atomic layer deposition method, which can prevent damage of an organic light emitting diode by a perfect moisture removal process while effectively forming an alumina thin film on an organic light emitting diode substrate in an atomic layer deposition method using water.
Background
Recently, image display devices, which implement various kinds of information as a screen, are developing toward implementing the devices to have high performance while being thinner, lighter, and easily carried, owing to core technologies of the information communication age. The demand for image display devices has led to research and development of technologies for various flat panel display devices such as Liquid Crystal Displays (LCDs), Plasma Display Panels (PDPs), electroluminescent displays (ELDs), Field Emission Displays (FEDs), Organic Light Emitting Displays (OLEDs), and the like.
In particular, research and development have recently focused on OLEDs capable of implementing flexible features of image display devices. An OLED is a display device that displays an image by controlling the amount of light emitted from an organic light emitting layer, which is a device for injecting electrons and holes from an electron injection electrode (cathode) and a hole injection electrode (anode) into a light emitting layer and emitting light when excitons, which combine the injected electrons and holes, fall from an excited state to a ground state.
An active matrix OLED (amoled) among the OLEDs displays an image by arranging pixels composed of 3-color (R, G, B) sub-pixels controlled by active elements in a matrix form. Therefore, each sub-pixel is provided with an organic electroluminescent device and a single driving unit for driving the organic electroluminescent device. The cell driving unit includes at least two thin film transistors and includes a storage capacitor to control luminance of the organic electroluminescent display device by controlling an amount of current supplied to the organic electroluminescent device according to a data signal.
The OLED is manufactured in a method of forming an element substrate, which configures a unit panel by forming a plurality of cells defined into active and inactive areas on a mother substrate, forming a frit around the active areas, and cutting the mother substrate along a scribe line.
In this regard, internal leads such as gate lines and data lines formed in the active area are connected to on/off pads and Flexible Printed Circuit (FPC) pads, and then connected to shorting bars or the like through pad leads extending toward the outside. The on/off pad is used to confirm whether the lead network inside the device is operating normally and whether the FPC pad is connected to the driving circuit substrate through the FPC.
Although the OLED having such a structure has several advantages, there are problems to be solved in that it is difficult to develop a technology for mass-producing a large OLED, and if moisture and oxygen in the air are not effectively blocked, the lifespan is drastically reduced due to the occurrence of defects such as dark spots.
In particular, if an organic light emitting structure including an organic electroluminescent device and a monomer driving unit is formed on a polymer substrate such as polyimide to implement flexible display, the permeation rate of moisture and oxygen of the polymer substrate will be much higher than that of a glass substrate, and thus an encapsulation method for the organic light emitting structure has recently been receiving increased attention.
In the case of AMOLED, it is known that the value of the Water Vapor Transmission Rate (WVTR) as an evaluation scale of the moisture transmission rateShould be 10 days-6g/m2Or smaller. For this reason, instead of the encapsulation method using a glass substrate, a method of stacking a plurality of films for preventing moisture and oxygen from penetrating into a substrate (as shown in fig. 1) on which elements are formed has recently been proposed as an encapsulation method.
On the other hand, as shown in fig. 1, a thin film encapsulation method for encapsulating the light emitting diode 30 by sequentially stacking an inorganic thin film 40 and an organic thin film 50 having excellent moisture and oxygen blocking properties on the substrate 10 on which the organic light emitting diode 30 is formed is also proposed. In this regard, typically a barrier layer 20 is formed on the substrate 10.
However, since a technology for mass-producing a large-sized OLED related to the encapsulation method has not been developed so far, particularly, development of a technology for forming an inorganic thin film is urgently required.
Disclosure of Invention
Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a method which is capable of effectively forming an alumina thin film on an organic light emitting diode substrate in an atomic layer deposition method using water and preventing damage of the organic light emitting diode by a process of perfectly removing moisture absorbed in a reaction chamber.
In order to achieve the above object, according to one aspect of the present invention, there is provided a method of forming an aluminum oxide thin film on an organic light emitting diode substrate in an atomic layer deposition method, the method including the steps of: 1) installing a moisture removing trap on an exhaust line for exhausting gas in a vacuum chamber provided with a process gas supply unit and a process gas exhaust unit; 2) preparing a substrate on which an organic light emitting diode is formed; 3) carrying the substrate to the interior of the vacuum chamber; 4) removing moisture in the vacuum chamber by opening a gate valve in front of the moisture removal trap; 5) to use H2Atomic deposition of O as a process gasForming an alumina film on the substrate; and 6) removing moisture in the vacuum chamber in which the thin film deposition process is completed by opening a gate valve installed at the front of the moisture removal trap.
Further, in the present invention, it is preferable that the moisture removing trap is installed in front of the turbo pump of the exhaust line.
Further, in the present invention, it is preferable that the step 5) is performed using the process gas exhaust unit when the gate valve is closed, and the moisture-free state is maintained by opening the gate valve when the steps other than the step 5) are performed.
Drawings
Fig. 1 is a diagram showing a structure of a general organic light emitting diode substrate.
Fig. 2 is a diagram showing a structure of an atomic layer deposition apparatus according to an embodiment of the present invention.
Fig. 3 is a flowchart showing a method of forming an aluminum oxide thin film on an organic light emitting diode substrate by an atomic layer deposition method according to an embodiment of the present invention.
Description of the reference numerals
100: atomic layer deposition apparatus according to embodiments of the invention
110: vacuum chamber
120: process gas supply unit
130: process gas discharge unit
140: discharge line
150: moisture removal trap
Detailed Description
Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.
The method of forming an alumina thin film on an organic light emitting diode substrate in an atomic layer deposition method according to this embodiment starts with the step of preparing the organic light emitting diode substrate (step S100) as shown in fig. 3. The organic light emitting diode substrate is a structure in which a plurality of organic light emitting diodes are formed in a matrix form on a glass substrate or the like, and in which an encapsulation film for protecting the organic light emitting diodes is not formed.
As shown in fig. 2, the process gas supply unit 120, the process gas exhaust unit 130, the exhaust line 140, and the moisture removal trap 150 are installed in the vacuum chamber 110, and the atomic layer deposition method is performed in the vacuum chamber 110.
The process gas supply unit 120 is a component installed at one side of the vacuum chamber 110 (as shown in fig. 2) to supply a process gas or the like to the inside of the vacuum chamber 110. Further, the process gas exhaust unit 130 is a part for exhausting process gas or the like used in the process to the outside. Accordingly, when the process gas supply unit 120 and the process gas exhaust unit 130 supply and exhaust various gases in a pulse form and the operation of the exhaust line is excluded, a process of depositing an atomic layer on the organic light emitting diode substrate is performed.
In addition, the exhaust line 140 is used in the exhaust process to create and maintain a predetermined level of vacuum within the vacuum chamber 110. Thus, the discharge line 140 is substantially composed of a turbo pump 144, a dry pump 146 connected to the turbo pump 144, and a gate valve 148 for opening and closing a pipe 142, the pipe 142 being connected to the turbo pump 144.
Further, in this embodiment, the moisture removal trap 150 is preferably installed in front of the turbo pump 144 of the discharge line 140 as shown in fig. 2. Thus, when the gate valve 148 is opened by the moisture removal trap 150, all of the moisture in the vacuum chamber 110 can be absorbed and removed. Various structures may be used for the moisture removal trap 150, and for example, a structure that traps moisture in the exhaust gas using a vapor pressure difference or a solubility difference at an extremely low temperature obtained by using a gas such as helium gas may be used.
Next, a step of carrying the substrate to the inside of the vacuum chamber 110 is performed (step S200). In this step, the organic light emitting diode substrate prepared in the previous step is carried into the vacuum chamber and set at a process (treatment) position inside the vacuum chamber while a gate valve (not shown in the figure) mounted on a side wall or the like of the vacuum chamber to carry the substrate to the inside of the vacuum chamber is opened.
Next, a step of opening the front gate valve 148 of the moisture removal trap 150 and removing moisture in the vacuum chamber 110 is performed (step S300). This step is performed together with a process of exhausting the gas inside the vacuum chamber in advance before the process is performed, and is preferably performed before the organic light emitting diode substrate is carried into the vacuum chamber.
Further, since this step is performed in a simple method using only an operation of opening the gate valve 148 of the discharge line 140, it can be performed at the same time and in the same method as the ordinary discharge process.
Then, proceed to use H2A step of forming an alumina thin film on the organic light emitting diode substrate by an atomic deposition method using O as a process gas (step S400). Because Al is formed on the substrate by atomic deposition2O3A general method of the thin film may be used in this step, so a detailed description of this step will be omitted.
Obviously, when the gate valve 148 is closed, the process gas supply unit 120 and the process gas exhaust unit 130 are used to perform this step (step S400).
Next, a step of opening the front gate valve 148 of the moisture removal trap 150 and removing moisture of the interior of the vacuum chamber 110 in which the thin film deposition process has been completed is performed (step S500). This step is performed immediately after the process is completed to prevent damage of the organic light emitting diode by immediately removing moisture from the inside of the vacuum chamber 110 in which the process is completed. Obviously, the specific method of removing moisture is performed in the same manner as the step of removing moisture in advance.
Preferably, the gate valve 148 is in an open state at all times except for the step of forming the alumina thin film.
Next, the substrate may be detached to the outside (step S600), or an additional process may be performed.
According to the present invention, an alumina thin film can be efficiently formed on an organic light emitting diode vulnerable to moisture according to an atomic deposition method using vapor, and the organic light emitting diode in a deposition process can be not damaged by moisture by completely removing moisture before and after the process.
Although the present invention has been described with reference to the particular illustrative embodiments, it is not to be restricted by the embodiments but only by the appended claims. It is to be appreciated that those skilled in the art can change or modify the embodiments without departing from the scope and spirit of the present invention.
Claims (2)
1. A method of forming an alumina thin film, the method of forming an alumina thin film on an organic light emitting diode substrate in an atomic layer deposition method, the method of forming an alumina thin film comprising the steps of:
1) installing a moisture removing trap on an exhaust line for exhausting gas in a vacuum chamber provided with a process gas supply unit and a process gas exhaust unit;
2) preparing a substrate on which an organic light emitting diode is formed;
3) carrying the substrate to the interior of the vacuum chamber;
4) opening a front gate valve of the moisture removal trap to remove moisture in the vacuum chamber;
5) closing the gate valve and opening the process gas supply unit and the process gas exhaust unit to use H2Forming an alumina film on the substrate by an atomic deposition method with O as a process gas; and
6) opening the gate valve and closing the process gas supply unit and the process gas exhaust unit to remove moisture in the vacuum chamber in which the thin film deposition process is completed,
wherein step 5) is performed using the process gas exhaust unit when the gate valve is closed, and a moisture-free state is maintained by opening the gate valve when steps other than step 5) are performed.
2. The method of forming an aluminum oxide film according to claim 1, wherein the moisture removal trap is installed in front of a turbo pump of the exhaust line.
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| CN201610689247.8A CN107644949B (en) | 2016-07-21 | 2016-07-21 | Method for forming inorganic thin layer on OLED |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1539027A (en) * | 2001-08-08 | 2004-10-20 | ��ķ�о�����˾ | Rapid cycle chamber having top vent with nitrogen purge |
| CN102171521A (en) * | 2008-09-30 | 2011-08-31 | 赛默飞世尔科技(阿什维尔)有限责任公司 | Frost reduction by active circulation |
| CN102560421A (en) * | 2010-12-15 | 2012-07-11 | Ncd有限公司 | Method and system for thin film deposition |
| CN103493180A (en) * | 2011-04-25 | 2014-01-01 | 应用材料公司 | Semiconductor substrate processing system |
| CN103866287A (en) * | 2012-12-13 | 2014-06-18 | 丽佳达普株式会社 | Atomic layer deposition apparatus |
| CN104395498A (en) * | 2012-06-20 | 2015-03-04 | 应用材料公司 | Atomic layer deposition with rapid thermal treatment |
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2016
- 2016-07-21 CN CN201610689247.8A patent/CN107644949B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1539027A (en) * | 2001-08-08 | 2004-10-20 | ��ķ�о�����˾ | Rapid cycle chamber having top vent with nitrogen purge |
| CN102171521A (en) * | 2008-09-30 | 2011-08-31 | 赛默飞世尔科技(阿什维尔)有限责任公司 | Frost reduction by active circulation |
| CN102560421A (en) * | 2010-12-15 | 2012-07-11 | Ncd有限公司 | Method and system for thin film deposition |
| CN103493180A (en) * | 2011-04-25 | 2014-01-01 | 应用材料公司 | Semiconductor substrate processing system |
| CN104395498A (en) * | 2012-06-20 | 2015-03-04 | 应用材料公司 | Atomic layer deposition with rapid thermal treatment |
| CN103866287A (en) * | 2012-12-13 | 2014-06-18 | 丽佳达普株式会社 | Atomic layer deposition apparatus |
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