CN107644949A - The method that inorganic thin layer is formed on OLED - Google Patents
The method that inorganic thin layer is formed on OLED Download PDFInfo
- Publication number
- CN107644949A CN107644949A CN201610689247.8A CN201610689247A CN107644949A CN 107644949 A CN107644949 A CN 107644949A CN 201610689247 A CN201610689247 A CN 201610689247A CN 107644949 A CN107644949 A CN 107644949A
- Authority
- CN
- China
- Prior art keywords
- moisture
- vacuum chamber
- aluminum oxide
- oxide film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The present invention relates to a kind of method that inorganic thin layer is formed on OLED, the method for especially forming aluminum oxide film on Organic Light Emitting Diode substrate with Atomic layer deposition method, the described method comprises the following steps：1) moisture is installed on pumping-out line and removes trap, the pumping-out line is used to discharge the gas in vacuum chamber, and the vacuum chamber is provided with process gas feeding unit and process gas deliverying unit；2) preparation Organic Light Emitting Diode is formed on substrate thereon；3) by the substrate carrier to the inside of the vacuum chamber；4) gate valve installed before trap is removed in the moisture to remove the moisture in the vacuum chamber by opening；5) to use H2O forms aluminum oxide film over the substrate as the atomic deposition method of process gas；And 6) gate valve installed before trap is removed in the moisture to remove the moisture in wherein completing the vacuum chamber of thin film deposition processes by opening.
Description
Technical field
The present invention relates to a kind of method that aluminum oxide film is formed on Organic Light Emitting Diode substrate, and more particularly
It is related to a kind of method for forming aluminum oxide film on Organic Light Emitting Diode substrate with Atomic layer deposition method, methods described can
To remove technique by perfect moisture to prevent the damage of Organic Light Emitting Diode, and simultaneously with the ald of use water
Method is effectively formed aluminum oxide film on Organic Light Emitting Diode substrate.
Background technology
In the recent period, various information are implemented towards by described device to implement into high-performance into the image display device of screen
And direction that is simultaneously thinner and lighter and being easy to delivery is developed, this is attributed to the fact that the core technology of information communication era.Show for image
The requirement of showing device result in such as liquid crystal display (LCD), Plasmia indicating panel (PDP), electroluminescent display
(ELD), the research of the technology of the various panel display apparatus of Field Emission Display (FED), OLED (OLED) etc.
And development.
Especially, research and development concentrates on the OLED for the flexible characteristic that can implement image display device in the recent period.
OLED is by controlling the amount of the light sent from organic luminous layer come the display device of display image, and the organic luminous layer is to use
In the electronics that will come from electron injection electrode (negative electrode) and hole injecting electrode (anode) and hole injection luminescent layer and work as
The device to be lighted when the exciton that institute's injected electrons is combined with hole is dropped into ground state from excited state.
Activematric OLED (AMOLED) among OLED by arrange with a matrix type by controlled by active component 3
The pixel that color (R, G, B) sub-pixel is formed carrys out display image.Therefore, each sub-pixel is provided with Organnic electroluminescent device and use
In the Monolithic driver unit of driving Organnic electroluminescent device.Monolithic driver unit includes at least two thin film transistor (TFT)s and wrapped
Storage is included with by organic to control supplied to the amount of the electric current of Organnic electroluminescent device according to data-signal control
The brightness of luminous display unit.
For OLED to form the manufacture of the method for component substrate, it is defined as active region and nothing by being formed on female substrate
Multiple monomers of source region, form frit around active region and carry out dispensing unit panel along scribing wire cutting mother's substrate.
At this point, the gate line and the inner lead of data wire such as formed in the active areas is connected to ON/OFF
Weld pad and flexible print circuit (FPC) weld pad, and then by being connected to short bar towards the weld pad lead extended outward
Deng.ON/OFF weld pad be used to confirming wire elements inside device whether normal work, and whether FPC weld pads connected by FPC
To drive circuit substrate.
Although the OLED with this structure has the problem of following to be solved with some advantages, that is, it is difficult to
The technology for mass producing large-scale OLED is researched and developed, and if not operatively blocking the moisture and oxygen in air, then can
The life-span is sharp reduced because of the defects of such as blackening occurs.
Especially, if the organic light-emitting structure including Organnic electroluminescent device and Monolithic driver unit is in polyimides
Etc. being formed in polymer substrate to implement Flexible Displays, then the moisture of polymer substrate and the penetration speed of oxygen will be far above
Glass substrate, and the method for packing that thus be accordingly used in organic light-emitting structure more attracts attention in the recent period.
In AMOLED situation, it was known that the moisture vapor transmission rate as the assessment scale of moisture penetration speed
(WVTR) numerical value should be daily 10-6g/m2It is or smaller.Therefore, method for packing of the substitution using glass substrate, is stacked
The method that multilayer is used for the film (as shown in fig. 1) for preventing moisture and oxygen from infiltrating into the substrate that element is formed thereon is recent
It is suggested as method for packing.
On the other hand, as shown in fig. 1, it is also proposed that film encapsulation method, the film encapsulation method be used for by
It is sequentially stacked with the remarkable performance for blocking moisture and oxygen on the substrate 10 that Organic Light Emitting Diode 30 is formed thereon
Inorganic thin film 40 and organic film 50 carry out encapsulating light emitting diode 30.At this point, usual barrier layer 20 is formed on substrate
On 10.
However, because not developing the technology for mass producing the large-scale OLED related to the method for packing yet so far,
So especially, there is an urgent need to research and develop the technology for forming inorganic thin film.
The content of the invention
Accordingly, it is considered to it is made that the present invention to the above mentioned problem occurred in the prior art, and it is an object of the invention to
A kind of method is provided, methods described can with the Atomic layer deposition method using water on Organic Light Emitting Diode substrate effectively
Form aluminum oxide film and organic hair can be prevented by the technique for ideally removing the moisture absorbed in reative cell
The damage of optical diode.
In order to realize the above object according to an aspect of the invention, there is provided it is a kind of formed aluminum oxide film method,
The method for forming aluminum oxide film forms aluminum oxide film with Atomic layer deposition method on Organic Light Emitting Diode substrate,
It the described method comprises the following steps：1) moisture is installed on pumping-out line and removes trap, the pumping-out line is used to discharge very
Gas in plenum chamber, the vacuum chamber are provided with process gas feeding unit and process gas deliverying unit；2) prepare organic
Light emitting diode is formed on substrate thereon；3) by the substrate carrier to the inside of the vacuum chamber；4) opening is passed through
The moisture removes the gate valve before trap to remove the moisture in the vacuum chamber；5) to use H2O is as work
The atomic deposition method of skill gas forms aluminum oxide film over the substrate；And 6) caught by opening to remove in the moisture
The gate valve installed before storage removes the moisture in the vacuum chamber for wherein completing thin film deposition processes.
In addition, in the present invention, it is preferred that the moisture removes the turbine that trap is installed in the pumping-out line
Before pump.
In addition, in the present invention, it is preferred that come when the gate valve is closed using the process gas deliverying unit
Step 5) is carried out, and no moisture shape is maintained by opening the gate valve when carrying out the step in addition to step 5)
State.
Brief description of the drawings
Fig. 1 is the diagram for the structure for showing common Organic Light Emitting Diode substrate.
Fig. 2 is the diagram for the structure for showing apparatus for atomic layer deposition according to an embodiment of the invention.
Fig. 3 be show according to an embodiment of the invention, with Atomic layer deposition method on Organic Light Emitting Diode substrate shape
Into the flow chart of the method for aluminum oxide film.
Description of reference numerals
100：Apparatus for atomic layer deposition according to an embodiment of the invention
110：Vacuum chamber
120：Process gas feeding unit
130：Process gas deliverying unit
140：Pumping-out line
150：Moisture removes trap
Embodiment
Hereinafter, it will be described in detail with reference to the accompanying drawings the particular embodiment of the present invention.
The side of aluminum oxide film is formed on Organic Light Emitting Diode substrate according to the embodiment, with Atomic layer deposition method
Since method prepare organic light emitting diode substrate the step of (step S100) as shown in Figure 3.Organic Light Emitting Diode serves as a contrast
Bottom is that plurality of Organic Light Emitting Diode forms in glass substrate or similar substrates and is wherein used to protect in the matrix form
Protect the structure that the packaging film of the Organic Light Emitting Diode is not formed.
As shown in Figure 2, process gas feeding unit 120, process gas deliverying unit 130, pumping-out line 140 and moisture
Remove trap 150 to be installed in vacuum chamber 110, Atomic layer deposition method is carried out in the vacuum chamber 110.
Process gas feeding unit 120 is (as shown in Figure 2) with to vacuum chamber in the installation of the side of vacuum chamber 110
110 inside supply process gas or the part of similar gas.In addition, process gas deliverying unit 130 is used in technique
Used process gas or similar gas are expelled to the part of outside.Therefore, when process gas feeding unit 120 and process gas
When the operation that body deliverying unit 130 was supplied and discharged various gases and pumping-out line with impulse form is excluded, having
The technique of deposition and atomic layer on machine light emitting diode substrate.
In addition, pumping-out line 140 is used in technique is discharged, to produce and maintain predetermined inside vacuum chamber 110
The vacuum level of degree.Therefore, pumping-out line 140 generally by turbine pump 144, be connected to the dry pump of turbine pump 144
146 and the gate valve 148 for opening and closing pipeline 142 form, the pipeline 142 is connected to turbine pump 144.
In addition, in this embodiment, moisture removes trap 150 and is preferably arranged on pumping-out line 140 as shown in Figure 2
Turbine pump 144 before.Therefore, when gate valve 148 removes trap 150 by moisture to be opened, the institute in vacuum chamber 110
It is wetly to be absorbed and removed.Various structures can be used for moisture and remove trap 150, and can for example use as follows
Structure, the structure are caught under the extremely low temperature obtained by using gases such as helium using vapor pressure differential or poor solubility
Moisture in collection discharge gas.
Then, enter to be about to the step (step S200) inside substrate carrier to vacuum chamber 110.In this step, when
Installed in the side wall or similar portions of vacuum chamber with by the gate valve (not shown) inside substrate carrier to vacuum chamber
During opening, the Organic Light Emitting Diode substrate carrier prepared in step before into vacuum chamber and is placed in vacuum chamber
Technique (processing) opening position of chamber interior.
Then, enter to be about to the gate valve 148 that moisture is removed before trap 150 to open and by vacuum chamber 110
Moisture remove the step of (step S300).The step with before the technique is carried out in advance by the gas inside vacuum chamber
The process of discharge is carried out together, further, it is preferred that the step by Organic Light Emitting Diode substrate carrier into vacuum chamber
Perform before.
In addition, because the step is with only using only the straightforward procedure for the operation for opening the gate valve 148 of pumping-out line 140
To perform, so it can be with the common discharge technique identical time and to hold with common discharge technique identical method
OK.
Then, carry out to use H2O as process gas atomic deposition method on Organic Light Emitting Diode substrate shape
Into (step S400) the step of aluminum oxide film.Because Al is formed on substrate in atomic deposition method2O3The commonsense method of film
It can use in this step, so the detailed description that the step will be omitted.
It is apparent that when gate valve 148 is closed, process gas feeding unit 120 and process gas deliverying unit 130 are used
To carry out the step (step S400).
Then, enter to be about to the gate valve 148 that moisture is removed before trap 150 to open and will wherein complete film
The step of moisture of the inside of the vacuum chamber 110 of depositing operation removes (step S500).The step is done in the technique
Carry out immediately afterwards, with by the way that the moisture for wherein completing the inside of the vacuum chamber 110 of the technique is removed to prevent immediately
The only damage of Organic Light Emitting Diode.It is apparent that it is identical to remove the step of specific method of moisture according to removing moisture in advance
Mode carry out.
Preferably, gate valve 148 is in open mode in the All Time in addition to the step of forming aluminum oxide film.
Then, substrate can be disassembled to outside (step S600), or can carry out extra technique.
According to the present invention it is possible to according to the atomic deposition method using steam easily by the organic light-emitting diodes of moisture attack
Aluminum oxide film is effectively formed on pipe, and the Organic Light Emitting Diode in depositing operation can be by before the technique
Moisture is removed completely afterwards not damaged by moisture.
Although describing the present invention with reference to specific illustrative examples, the present invention is not limited to the implementation
Example and be only defined solely by the appended claims.It should also be understood that those skilled in the art can not depart from the model of the present invention
Enclose and the embodiment is altered or modified in the case of spiritual.
Claims (3)
1. a kind of method for forming aluminum oxide film, the method for forming aluminum oxide film is with Atomic layer deposition method organic
Aluminum oxide film is formed on light emitting diode substrate, the method for forming aluminum oxide film comprises the following steps：
1) moisture is installed on pumping-out line and removes trap, the pumping-out line is used to discharge the gas in vacuum chamber, institute
State vacuum chamber and be provided with process gas feeding unit and process gas deliverying unit；
2) preparation Organic Light Emitting Diode is formed on substrate thereon；
3) by the substrate carrier to the inside of the vacuum chamber；
4) gate valve before trap is removed to remove the moisture in the vacuum chamber by opening the moisture；
5) to use H2O forms aluminum oxide film over the substrate as the atomic deposition method of process gas；And
6) thin film deposition is wherein completed by opening the gate valve installed before moisture removal trap to remove
Moisture in the vacuum chamber of technique.
2. the method according to claim 1 for forming aluminum oxide film, it is characterised in that the moisture removes trap quilt
Before the turbine pump of the pumping-out line.
3. the method according to claim 1 for forming aluminum oxide film, it is characterised in that when the gate valve is closed,
Step 5) is carried out using the process gas deliverying unit, and when carrying out the step in addition to step 5), by beating
The gate valve is driven to maintain no moisture state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610689247.8A CN107644949B (en) | 2016-07-21 | 2016-07-21 | Method for forming inorganic thin layer on OLED |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610689247.8A CN107644949B (en) | 2016-07-21 | 2016-07-21 | Method for forming inorganic thin layer on OLED |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107644949A true CN107644949A (en) | 2018-01-30 |
| CN107644949B CN107644949B (en) | 2020-11-24 |
Family
ID=61109979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610689247.8A Active CN107644949B (en) | 2016-07-21 | 2016-07-21 | Method for forming inorganic thin layer on OLED |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107644949B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1539027A (en) * | 2001-08-08 | 2004-10-20 | ��ķ�о�����˾ | Rapid cycle chamber having top vent with nitrogen purge |
| CN102171521A (en) * | 2008-09-30 | 2011-08-31 | 赛默飞世尔科技(阿什维尔)有限责任公司 | Frost reduction by active circulation |
| CN102560421A (en) * | 2010-12-15 | 2012-07-11 | Ncd有限公司 | Method and system for thin film deposition |
| CN103493180A (en) * | 2011-04-25 | 2014-01-01 | 应用材料公司 | Semiconductor substrate processing system |
| CN103866287A (en) * | 2012-12-13 | 2014-06-18 | 丽佳达普株式会社 | Atomic layer deposition apparatus |
| CN104395498A (en) * | 2012-06-20 | 2015-03-04 | 应用材料公司 | Atomic layer deposition with rapid thermal treatment |
-
2016
- 2016-07-21 CN CN201610689247.8A patent/CN107644949B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1539027A (en) * | 2001-08-08 | 2004-10-20 | ��ķ�о�����˾ | Rapid cycle chamber having top vent with nitrogen purge |
| CN102171521A (en) * | 2008-09-30 | 2011-08-31 | 赛默飞世尔科技(阿什维尔)有限责任公司 | Frost reduction by active circulation |
| CN102560421A (en) * | 2010-12-15 | 2012-07-11 | Ncd有限公司 | Method and system for thin film deposition |
| CN103493180A (en) * | 2011-04-25 | 2014-01-01 | 应用材料公司 | Semiconductor substrate processing system |
| CN104395498A (en) * | 2012-06-20 | 2015-03-04 | 应用材料公司 | Atomic layer deposition with rapid thermal treatment |
| CN103866287A (en) * | 2012-12-13 | 2014-06-18 | 丽佳达普株式会社 | Atomic layer deposition apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107644949B (en) | 2020-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20210020874A1 (en) | Mask assembly, apparatus and method of manufacturing display device using the same, and display device | |
| CN102683381B (en) | Organic light emitting diode display and manufacture method thereof | |
| KR102032748B1 (en) | Method for fabricating Organic Electroluminescence Device and the Organic Electroluminescence Device fabricated by the method | |
| CN107731883A (en) | OLED display and preparation method thereof | |
| CN109671858A (en) | A kind of production method of display screen | |
| KR101679850B1 (en) | Organic light emitting diodde desplay device | |
| JP6087267B2 (en) | Vapor deposition apparatus, vapor deposition method, and organic electroluminescence element manufacturing method | |
| CN104269426A (en) | Display panel, manufacturing method thereof and display device | |
| US8182610B2 (en) | Cleaning equipment and cleaning method of deposition mask | |
| CN107919379A (en) | OLED display and preparation method thereof | |
| KR101676764B1 (en) | The organic light emitting diode and the method for manufacturing that | |
| KR101746359B1 (en) | Device and method for pre-treating metal magnesium | |
| KR102058239B1 (en) | Large Area Organic Light Emitting Diode Display And Method For Manufacturing The Same | |
| JP2007305560A (en) | Deposition device of organic luminescent element, and filling method of deposition material | |
| CN109860250A (en) | OLED display screen and preparation method thereof | |
| CN104593731B (en) | Vapor deposition-replacement integrated apparatus and application method thereof | |
| US20210305542A1 (en) | Mask assembly, apparatus for manufacturing display apparatus, and method of manufacturing display apparatus | |
| CN107644949A (en) | The method that inorganic thin layer is formed on OLED | |
| CN107275520A (en) | Laser etching device and utilize this laser ablation method | |
| CN110656310B (en) | Film forming apparatus, apparatus for manufacturing organic device, and method for manufacturing organic device | |
| CN107425126A (en) | Pixel defines structure, organic luminescent device and its method for packing, display device | |
| JP2008088465A (en) | Vapor deposition apparatus, and method of manufacturing organic electroluminescence apparatus | |
| TWI650889B (en) | The method for forming an inorganic thin layer on the oled | |
| KR101933061B1 (en) | The method for forming a inorganic thin layer on the oled | |
| KR101908512B1 (en) | Organic electro-luminesence display panel and manufactucring method of the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |