CN103866287A - Atomic layer deposition apparatus - Google Patents
Atomic layer deposition apparatus Download PDFInfo
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- CN103866287A CN103866287A CN201310681160.2A CN201310681160A CN103866287A CN 103866287 A CN103866287 A CN 103866287A CN 201310681160 A CN201310681160 A CN 201310681160A CN 103866287 A CN103866287 A CN 103866287A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Organic Chemistry (AREA)
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- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
An atomic layer deposition apparatus according to the invention comprises a chamber having a sealed reaction space formed inside; a first gas suction/discharge unit sucking or discharging first gas from or into a substrate disposed in the chamber; a second gas suction/discharge unit sucking or discharging second gas from or into the substrate; and a vacuum exhaust pipe disposed between the first gas suction/discharge unit and the second gas suction/discharge unit and used for forming a vacuum between the first gas suction/discharge unit and the second gas suction/discharge unit. The substrate moves relatively along a direction intersecting with at least one length direction of the first gas suction/discharge unit, the second gas suction/discharge unit or a vacuum gas exhaust duct. Through gas discharge and suction of a single unit, a separate unit for discharging or sucking gas is not required and the production capacity of the atomic layer deposition process can be improved.
Description
Technical field
The present invention relates to apparatus for atomic layer deposition, more specifically, relate to can regulate before depositing operation, the operation pressure of chamber interior when technique, and there is the apparatus for atomic layer deposition of vacuum-lines (vacuum line) for this reason.
Background technology
Conventionally, while manufacturing semiconductor element or panel display apparatus etc., need to pass through various manufacturing process, wherein, the technique that deposits required film on the substrate such as wafer or glass is absolutely necessary.
This thin film deposition processes mainly adopts sputtering method (Sputtering), chemical Vapor deposition process (CVD, Chemical Vapor Deposition), atomic layer deposition method (ALD, Atomic Layer Deposition) etc.
Wherein, ald (Atomic Layer Deposition) method is to utilize the chemisorption of monoatomic layer and the nano level film deposition techniques of desorb, separate each reactive material separately and supply with chamber with impulse form, thereby utilize reactive material saturated on the surface of substrate surface (surface saturation) reaction to carry out the film deposition techniques of the new ideas of chemisorption and desorb.
Existing technique for atomic layer deposition needs to keep vacuum state in deposition process, therefore, need to be used for the utility appliance safeguarding, manage this vacuum state, but the process time is elongated, thereby causes productivity to decline.
In addition, can realize the limited space of vacuum, so there is the problem that is not suitable for the display industry of pursuing big area, maximization.
Moreover, the apparatus for atomic layer deposition that prior art relates to, in order to regulate or control the pressure of reaction chamber inside, except the device for injecting source gas, reactant gases, also needs device, the problem that therefore exists device to complicate separately.
Summary of the invention
The invention provides a kind of apparatus for atomic layer deposition that can carry out gas discharge and suction in single cell.
The invention provides a kind of apparatus for atomic layer deposition that utilizes operation pressure, reference pressure etc. that gas suction unit can control chamber chamber interior.
In order to solve described problem, the apparatus for atomic layer deposition that one embodiment of the invention relate to can comprise: chamber, is formed with airtight reaction compartment in inside; The first gas suction unit, sucks or discharges the first gas to the substrate that is positioned at described chamber interior; The second gas suction unit, sucks or discharges the second gas to described substrate; And Vacuum exhaust tube, be arranged between described the first gas suction unit and described the second gas suction unit, for form vacuum between described the first gas suction unit and described the second gas suction unit; Described substrate can along with described the first gas suction unit, described the second gas suction unit or described Vacuum exhaust tube at least one the length direction direction of intersecting carry out relative movement.
Due to formation described above, so can carry out by single gas suction unit discharge and the suction of gas, therefore needn't possess the independent unit for discharging or suck gas, can improve the throughput of atom layer deposition process.
Apparatus for atomic layer deposition can also comprise: the first gas supply part, is connected in described the first gas suction unit, to supply with the first gas; The second gas supply part, is connected in described the second gas suction unit, to supply with the second gas; And vacuumize portion, be connected in described Vacuum exhaust tube, for forming vacuum in described chamber interior; Wherein, described in, the portion of vacuumizing also can be connected with at least one in described the first gas suction unit or described the second gas suction unit.
Described the first gas suction unit and described the second gas suction unit can comprise: air-supply duct, is formed with in inside for flow channel; Vapor pipe, is formed with in inside and the described pressure mitigation portion being communicated with for flow channel; And air suction pipe, at least a portion of surrounding described vapor pipe periphery, to form air-breathing runner in inside.
The internal volume of described pressure mitigation portion can be greater than the described internal volume for flow channel.
Can be formed with at least one air feed interface at described air-supply duct, this air feed interface is connected with described the first gas supply part or described the second gas supply part.
Can be formed with at least one exhaust port at described air suction pipe, this exhaust port with described in the portion of vacuumizing be connected.
Described exhaust port can be formed on the suction gas collection unit of described chamber and surround with air-tight manner, described suction gas collection unit with described in the portion of vacuumizing be connected.
Described Vacuum exhaust tube can comprise: extraction pipe, is formed with the runner of bleeding being connected with the described portion of vacuumizing in inside; Air-breathing guide portion, is formed with the air-breathing interface being communicated with the described runner of bleeding in inside.
Described Vacuum exhaust tube can also comprise: extraction pipe, inside have bleed described in connection runner and described in the pressure mitigation portion of bleeding between interface.
On the other hand, the apparatus for atomic layer deposition that another embodiment of the present invention relates to can comprise: chamber, is formed with airtight reaction compartment in inside; First outlet pipe, discharges the first gas to the substrate that is positioned at described chamber interior; Second exhaust pipe, discharges the second gas to described substrate; And Vacuum exhaust tube, be arranged between described first outlet pipe and described second exhaust pipe, for form vacuum between described first outlet pipe and described second exhaust pipe; Described substrate can along with described first outlet pipe, described second exhaust pipe or described Vacuum exhaust tube at least one the length direction direction of intersecting carry out relative movement.
Apparatus for atomic layer deposition can also comprise: the first gas supply part, is connected in described first outlet pipe, to supply with the first gas; The second gas supply part, is connected in described second exhaust pipe, to supply with the second gas; And vacuumize portion, be connected in described Vacuum exhaust tube, to form vacuum in described chamber interior.
Described first outlet pipe and described second exhaust pipe can comprise: air-supply duct, is formed with in inside for flow channel; Vapor pipe body, is formed with in inside and the described pressure mitigation portion being communicated with for flow channel; And exhaust portion, to be formed at described pressure mitigation portion with described for flow channel opposed mode.
The internal volume of described pressure mitigation portion can be greater than the described internal volume for flow channel.
Can be formed with at least one air feed interface at described air-supply duct, this air feed interface is connected with described the first gas supply part or described the second gas supply part.
Described Vacuum exhaust tube can be identical with described first outlet pipe or described second exhaust pipe shape form.
Can also comprise chamber dry pump, it is connected in described chamber, for forming vacuum in described chamber interior.
Invention effect
As mentioned above, the apparatus for atomic layer deposition the present invention relates to, can expect to boost productivity, and easily realizes and maximizing, thereby can be applicable to field of display.
The apparatus for atomic layer deposition the present invention relates to, can utilize atmospheric plasma, UV-lamp and laser etc. to increase sedimentation velocity, also can depositing metal films and nitrided film etc.
The apparatus for atomic layer deposition the present invention relates to, can easily control before depositing operation or reference pressure or operation pressure when technique, after discharging depositing operation by gas suction unit to chamber outside, residual gas carrys out adjusting process pressure etc., thereby can prevent that apparatus structure from complicating.
The apparatus for atomic layer deposition the present invention relates to, can utilize and have the gas suction unit of pressure mitigation portion or vapor pipe to substrate-side jet flow stream, thereby therefore jet flow stream equably can improve deposition quality.
But effect of the present invention is not limited to above-mentioned effect, NM other effect can clearly understand those skilled in the art by record below.
Accompanying drawing explanation
Fig. 1 is the schematic diagram that briefly shows the apparatus for atomic layer deposition that one embodiment of the invention relate to.
Fig. 2 is the stereographic map that the inside of the apparatus for atomic layer deposition shown in Fig. 1 is shown.
Fig. 3 is the stereographic map that the gas suction unit using in the apparatus for atomic layer deposition of Fig. 1 is shown.
Fig. 4 is the horizontal and vertical sectional view that the gas suction unit shown in Fig. 3 is shown.
Fig. 5 is the schematic diagram that briefly shows the apparatus for atomic layer deposition that another embodiment of the present invention relates to.
Fig. 6 is the stereographic map that the inside of the apparatus for atomic layer deposition shown in Fig. 5 is shown.
Fig. 7 is stereographic map and the sectional view that the vapor pipe using in the apparatus for atomic layer deposition of Fig. 5 is shown.
Fig. 8 is the sectional view that the gas suction unit of Fig. 3 or the vapor pipe of Fig. 7 and connected gas injection pressure regulon are shown.
Fig. 9 is the schematic diagram that the variation of the apparatus for atomic layer deposition shown in Fig. 1 is shown.
Reference numeral:
100,200,300: apparatus for atomic layer deposition
110,210,310: substrate
120,220: substrate temperature adjusting portion
130,140: gas suction unit
131,141,231,241: air-supply duct
132,142: air suction pipe
133,143: suction unit
134,144,230,240: vapor pipe
135,145,235,245: for flow channel
136,146,236,246: spray nozzle of the gas supply
137,147: exhaust portion
138,148,238,248: pressure mitigation portion
150,250: Vacuum exhaust tube
160,170,260,270: gas supply part
180,280: vacuumize portion
190: regulon is pressed in gas injection
Embodiment
Below, the embodiment that present invention will be described in detail with reference to the accompanying relates to.But embodiment does not limit or limits the present invention.Same reference numerals shown in each accompanying drawing represents identical member.
Fig. 1 is the schematic diagram that briefly shows the apparatus for atomic layer deposition that one embodiment of the invention relate to, Fig. 2 is the stereographic map that the inside of the apparatus for atomic layer deposition shown in Fig. 1 is shown, Fig. 3 is the stereographic map that is illustrated in the gas suction unit using in the apparatus for atomic layer deposition shown in Fig. 1, Fig. 4 is the horizontal and vertical sectional view that the gas suction unit shown in Fig. 3 is shown, Fig. 5 is the schematic diagram that briefly shows the apparatus for atomic layer deposition that another embodiment of the present invention relates to, Fig. 6 is the stereographic map that the inside of the apparatus for atomic layer deposition shown in Fig. 5 is shown, Fig. 7 is stereographic map and the sectional view that is illustrated in the vapor pipe using in the apparatus for atomic layer deposition shown in Fig. 5, Fig. 8 is the sectional view that the vapor pipe shown in the gas suction unit shown in Fig. 3 or Fig. 7 and connected gas injection pressure regulon are shown, Fig. 9 is the schematic diagram that the variation of the apparatus for atomic layer deposition shown in Fig. 1 is shown.
Referring to figs. 1 through Fig. 4, the apparatus for atomic layer deposition 100 that one embodiment of the invention relate to can comprise: chamber 101, forms airtight reaction compartment therein; The first gas suction unit 130, sucks or discharges the first gas (for example source gas) to being arranged at the substrate 110 of chamber 101 inside; The second gas suction unit 140, sucks or discharges the second gas (for example reactant gases) to substrate 110; And Vacuum exhaust tube 150, be arranged between the first gas suction unit 130 and the second gas suction unit 140, between the first gas suction unit 130 and the second gas suction unit 140, form vacuum.
At this, substrate 110 can along with the first gas suction unit 130, the second gas suction unit 140 or Vacuum exhaust tube 150 in the direction TD that intersects of at least one length direction carry out relative movement.
By above-mentioned formation, can carry out by single gas suction unit discharge and the suction of gas, therefore needn't possess the independent unit for discharging or suck gas, thereby can improve the throughput (throughput) of atom layer deposition process.
The apparatus for atomic layer deposition 100 that one embodiment of the invention relate to can also comprise: multiple gas suctions unit 130,140, and on substrate 110 or surface deposition atomic shell (Atomic Layer) and discharge (injection) or suck (suction) source gas (Source Gas) or reactant gases (Reactant Gas).At this, the first gas can be any in source gas or reactant gases, and the second gas can be the another kind in source gas or reactant gases.In Fig. 1 and Fig. 2, source gas can be discharged/suck in the first gas suction unit 130, the second gas suction unit 140 discharge/sucting reaction gas.
At this, " exhaust " is to point to substrate 110 jet surfaces or ejection the first/the second gas, and " air-breathing " refers to that sucking (suction) from substrate 110 surfaces has neither part nor lot in the first/the second remaining gas of reaction and discharge to chamber 101 is outside.
According to Fig. 1, the first gas suction unit 130 is one, and the second gas suction unit 140 is two, and Vacuum exhaust tube 150 is three.At this, the quantity of the first/the second gas suction unit 130,140 and Vacuum exhaust tube 150 can also increase.In addition, just can carry out the atom layer deposition process of one-period with the form configuration of the second gas suction unit 140, Vacuum exhaust tube 150, the first gas suction unit 130, Vacuum exhaust tube 150, the second gas suction unit 140 and Vacuum exhaust tube 150, but this collocation form can carry out various distortion according to processing requirement, output, throughput etc.
On the other hand, for convenience of explanation, the first/the second gas suction unit 130,140 and two Vacuum exhaust tubes 150 are shown respectively in Fig. 2.
The apparatus for atomic layer deposition 100 that one embodiment of the invention relate to, airtight by the chamber 101 that forms reaction compartment in inside, be provided with substrate 110, the first/the second gas suction unit 130,140 and Vacuum exhaust tube 150 in chamber 101 inside.
Be arranged under the state of chamber 101 inside, substrate 110, with under the state of fixing, is transferred in multiple the first/the second gas suction unit 130,140; Or under state with fixing base 110, transfer multiple the first/the second gas suction unit 130,140; Or together transfer substrate 110 and the first/the second gas suction unit 130,140.In the time together transferring substrate 110 and the first/the second gas suction unit 130,140, move round about each other.Therefore, in either case, substrate 110 and the first/the second gas suction unit 130,140 move relative to each other, and this direction of relative movement TD has been shown in Fig. 1 and Fig. 2.
The apparatus for atomic layer deposition 100 the present invention relates to, substrate 110 carries out relative movement with respect to the first/the second gas suction unit 130,140 to both direction, does not need large working space while therefore processing large-area substrates.In addition,, if shorten the relative movement distance of substrate 110 with respect to the first/the second gas suction unit 130,140, can shorten track (foot print), thereby be easy to process large-area substrates.
Apparatus for atomic layer deposition 100 can also comprise: the first gas supply part 160(Source Line), be connected in the first gas suction unit 130, to supply with the first gas; The second gas supply part 170(Reactant Line), be connected in the second gas suction unit 140, to supply with the second gas; And vacuumize the 180(Bar Dry Pump of portion), be connected in Vacuum exhaust tube 150, with in the inner vacuum that form of chamber 101.Preferably, the the first/the second gas supply part 160,170 and vacuumize portion 180 and be arranged on chamber 101 outsides, the first/the second gas supply part 160,170 can be connected with the first gas suction unit 130 and the second gas suction unit 140 with the second gas supply pipe road 171 by the first gas supply pipe road 161 respectively.
On the other hand, as shown in Figure 1, apparatus for atomic layer deposition 100 can also comprise chamber dry pump 102(Chamber Dry Pump), it is connected in chamber 101, for forming vacuum in chamber 101 inside.Chamber dry pump 102 can be arranged on the outside of chamber 101, is connected in chamber 101 by pump-line 103.Now, pump-line 103 also can be connected in chamber 101, or also can be connected in as illustrated in fig. 1 the residing side of substrate 110.In order to be connected with pump-line 103, can be formed with venting port 104 in the lower side of chamber 101 or substrate 110.
The apparatus for atomic layer deposition 100 that one embodiment of the invention relate to, before depositing operation starts, can, by operation chamber dry pump 102 at the inner vacuum state that forms of chamber 101, can chamber 101 inside be evacuated to reference pressure (base pressure, approximately 10 by chamber dry pump 102
-3torr) vacuum, also can be held in normal pressure by chamber 101 inside.
If depositing operation starts, chamber dry pump 102 stops action, and depositing operation can regulate by vacuumizing portion 180 operation pressure (0.1～0.2torr) of chamber 101 inside.In addition, also can vacuumize portion 180 and chamber dry pump 102 is poor at the inner mineralization pressure of chamber 101 by a biconditional operation, thereby improve the gas uniform degree (Uniformity) of discharging (injection) from gas suction unit 130,140 by this pressure difference, to spray equably.
Also can remove chamber dry pump 102, replace the function of chamber dry pump 102 with the first/the second gas suction unit 130,140., also can, according to air-breathing (sucking suction) action of the first/the second gas suction unit 130,140, form reference pressure in chamber interior, or form pressure reduction.
Bottom at substrate 110 can be provided with substrate temperature adjusting portion 120.Substrate temperature adjusting portion 120 can improve or reduce the temperature at the substrate position of supplying with the first gas (source gas), but be not to change whole substrate 110 temperature, and only change the temperature of part substrate, thereby can prevent the residual problems such as thermodiffusion that temperature variation causes, the lost of life, physical deformation.Substrate temperature adjusting portion 120 can be the form such as well heater (heater) or scatterer (cooling pad).
The Vacuum exhaust tube 180 of the apparatus for atomic layer deposition 100 relating to due to one embodiment of the invention is arranged between the first gas suction unit 130 and the second gas suction unit 140, thereby can between the first gas suction unit 130 and the second gas suction unit 140, form vacuum.
In the time that transferring to the left along direction of relative movement TD from right side, substrate 110 when deposition and atomic layer, can configure successively from left side to right side the first gas suction unit 130, Vacuum exhaust tube 150, the second gas suction unit 140 and Vacuum exhaust tube 150.Therefore, substrate 110 surfaces contact with the first gas (source gas) for the first time, and advance to the left, carry out successively the first gas (source gas) supply, vacuum exhaust, the second gas (reactant gases) supply and vacuum exhaust, thereby at substrate 110 surface deposition atomic shells.
Be preferably, the gas suction unit 130,140 of the apparatus for atomic layer deposition 100 that one embodiment of the invention relate to, along direction of relative movement TD with identical or configure across certain distance.But these distances can consider that each required time of reaction process step regulates.
Be preferably, the lowest end of the first/the second gas suction unit 130,140 and Vacuum exhaust tube 150 and substrate 110 surfaces keep a determining deviation G.More particularly, the lowest end of gas suction unit 130,140 should keep a determining deviation G with substrate 110 surfaces.Be preferably, described spacing G is no more than 10～20mm.If spacing G is less than 10～20mm, the bottom of gas suction unit 130,140 contacts with substrate 110 upper surfaces or is too near, cause source gas or reactant gases likely before being fully supplied to substrate 110, to be inhaled into, if be greater than 10～20mm, likely reduce air feed efficiency.
But described spacing G is not limited to the scope that is no more than 10～20mm.According to the structure of apparatus for atomic layer deposition 100, also can change described spacing G, the scope of described spacing G can consider that the performance requriements of apparatus for atomic layer deposition 100 decides.
Exhaust (or injection) and air-breathing (or suction) can be carried out or carry out simultaneously in described the first/the second gas suction unit 130,140 in single cell.Further describe gas suction unit 130,140 with reference to accompanying drawing below.The first gas suction unit 130 and the second gas suction unit 140, only have the gaseous species difference of discharge/suction, and its thin bilge construction is identical.
With reference to Fig. 3 and Fig. 4, the first gas suction unit 130 and the second gas suction unit 140 can comprise: air-supply duct 131,141, is formed with therein for flow channel 135,145; Vapor pipe 134,144, is formed with and the pressure mitigation portion 138,148 being communicated with for flow channel 135,145 therein; And air suction pipe 132,142, surround at least a portion of vapor pipe 134,144 peripherys, thereby form air-breathing runner 139,149 therein.
As abovely can carry out gas discharge and suction by single gas suction unit 130,140, therefore not need the independent device of discharging or sucking for gas, thereby can improve the throughput (throughput) of atom layer deposition process.
The air-supply duct 131,141 that the gas of supplying with from outside gas supply part 160,170 is passed through, forms to outside highlightedly from air suction pipe 132,142, and in contrast, vapor pipe 134,144 can be formed on the inside of air suction pipe 132,142.As shown in Figure 1, air-supply duct 131,141 can be formed as, to the outside inside of giving prominence to or being positioned at suction gas collection unit 169,179 of chamber 101.
Take air suction pipe 132,142 as benchmark, air-supply duct 131,141 can be formed on the opposition side of vapor pipe 134,144.
Be preferably, the sectional dimension (diameter or area) of air-supply duct 131,141 is less than the sectional dimension of vapor pipe 134,144 and air suction pipe 132,142.Can be formed with the confession flow channel 135,145 being communicated with along its length in the inside of air-supply duct 131,141.Can be formed with at least one air feed interface 131a, 141a in the top of air-supply duct 131,141, this air feed interface 131a, 141a are connected with the first gas supply part 160 or the second gas supply part 170.Gas supply pipe road 161,171 can be communicated with supplying flow channel 135,145 by air feed interface 131a, 141a.
Air feed to air-supply duct 131,141 is realized by air feed interface 131a, 141a, and therefore, the two ends of preferred gas suction unit 130,140 are formed as blocked state.
Between air-supply duct 131,141 and vapor pipe 134,144, can be formed with at least one spray nozzle of the gas supply 136,146, this spray nozzle of the gas supply 136,146 makes to be communicated with for flow channel 135,145 and pressure mitigation portion 138,148.Can be communicated with by spray nozzle of the gas supply 136,146 for flow channel 135,145 and pressure mitigation portion 138,148.
Communicate with each other for flow channel 135,145, spray nozzle of the gas supply 136,146 and pressure mitigation portion 138,148, but air-breathing runner 139,149 is not communicated with.For flow channel 135,145, spray nozzle of the gas supply 136,146 and pressure mitigation portion the 138, the 148th, participate in the part of exhaust, air-breathing runner the 139, the 149th, participates in air-breathing part, is not therefore communicated with each other.
The internal volume of pressure mitigation portion 138,148 can be greater than the internal volume for flow channel 135,145.Pressure mitigation portion the 138, the 148th, a part for the runner of the gas flow flowing into by confession flow channel 135,145 and spray nozzle of the gas supply 136,146, makes the part with relatively large volume that can fully stop through the gas of narrow and small spray nozzle of the gas supply 136,146.Gas gaseous tension after narrow spray nozzle of the gas supply 136,146 uprises, and gaseous tension can decline along with being filled in the larger pressure mitigation portion in relative volume or space 138,148 when.Along with being filled in pressure mitigation portion 138,148, the gas of pressure drop is discharged (injection) to substrate 110, in this process, and can be with uniform pressure Exhaust Gas in the whole length of gas suction unit 130,140.
Owing to first discharging to substrate 110 sides after gases are collected by pressure mitigation portion 138,148, therefore can pass through pressure difference between substrate 110 and pressure mitigation portion 138,148 and in the whole length of gas suction unit 130,140 jet flow stream equably.
In other words, pressure mitigation portion the 138, the 148th, a part for runner, makes that gas that pressure is high is interim to stop and reduce pressure, so that jet flow stream equably.As long as pressure mitigation portion 138,148 has, cross section structure expands or the shape of expansion, and its shape is not limited to tank shape as described in Figure etc.
Can be formed with at least one and the exhaust port 132a, the 142a that vacuumize portion 180 and be connected at air suction pipe 132,142. Exhaust port 132a, 142a are formed on the suction gas collection unit 169,179 of chamber 101 and surround in airtight mode, suck gas collection unit 169,179 can with vacuumize portion 180 and be connected.Be formed at exhaust port 132a, 142a on air suction pipe 132,142 and be for to the outside interface of discharging the first gases or the second gas of chamber 101, can with vacuumize portion 180 and be connected.Can depart from gas suction unit 130,140 and be filled in after sucking gas collection unit 169,179 and discharge by vacuumizing portion 180 via the gas of exhaust port 132a, 142a.But according to circumstances, vacuum pipe 181 can not be directly connected in exhaust port 132a, 142a via inhaling air body collection unit 169,179, with the gas sucking to the outer discharge of chamber 101.
Fig. 4 (b) and (c) along the sectional view of the cutting line " A-A " of Fig. 4 (a).(a) of Fig. 4 is according to the length direction sectional view of the gas suction unit 130,140 of Fig. 3.
With reference to Fig. 4 (a), be formed with multiple spray nozzle of the gas supply 136,146, but also can be only formed with a spray nozzle of the gas supply 136,146.
As shown in Figure 1 and Figure 4, be preferably, exhaust port 132a, 142a are formed at both sides take air-supply duct 131,141 as benchmark, but exhaust port 132a, 142a also can be formed at a certain side take air-supply duct 131,141 as benchmark.
On the other hand, at vapor pipe 134,144, can be formed with at least one exhaust portion 137,147 at its length direction.Exhaust portion the 137, the 147th, for being filled in the outlet of the gas of pressure mitigation portion 138,148 to the outside discharge in gas suction unit 130,140.For this reason, exhaust portion 137,147 has the shape that is communicated with outside and pressure mitigation portion 138,148.
Air-breathing runner 139,149 can be formed as, and its space is separated by spray nozzle of the gas supply 136,146.As Fig. 4 (b) with (c), be formed at the air-breathing runner 139,149 between air suction pipe 132,142 and vapor pipe 134,144, be separated into two spaces by spray nozzle of the gas supply 136,146.Now, preferably, air-breathing runner 139,149 is separated into symmetry by spray nozzle of the gas supply 136,146.
Vapor pipe 134,144 can comprise exhaust guide part 137a, 147a, and this exhaust guide part 137a, 147a extend to form to the outside of vapor pipe 134,144 in exhaust portion 137,147.As shown in Figure 3 and Figure 4, the downside that exhaust guide part 137a, 147a can be positioned to substrate 110 extends to form, thereby guide, the gas making via exhaust portion 137,147 is as much as possible to be contacted with substrate 110.
At this, exhaust portion 137,147 can comprise that at least one is formed at hole or slit between exhaust guide part 137a, 147a.
In the time that exhaust portion 137,147 is formed by a plurality of holes, can, according to the pressure size differential pressure of each position in grate flow channel 138,148, preferably in the little part of pressure, increase the size in hole or reduce the spacing between hole.In addition,, in the time that exhaust portion 137,147 is formed by single slit, can, according to the pressure size differential pressure of grate flow channel 138,148 interior each positions, preferably in the little part of pressure, strengthen slit width.
Between circumferential direction one end of air suction pipe 132,142 133a, 143a and one end of exhaust guide part 137a, 147a, can be formed with suction unit 133,143, suction unit 133,143 can be along the circumferential direction of vapor pipe 134,144 or air suction pipe 132,142 with respect to exhaust portion 137,147 symmetries.
Vacuum exhaust tube 250(is with reference to Fig. 7) can comprise: extraction pipe 251, is formed with and the runner 255 of bleeding that vacuumizes portion 180 and be connected therein; And air-breathing guide portion 257a, be formed with the air-breathing interface 257 being communicated with the runner 255 of bleeding therein.
In the time that the first/the second gas suction unit 130,140 sprays the first gas (source gas) and the second gas (reactant gases) to substrate 110, in the whole length of gas suction unit 130,140, spray and could carry out equably ald reaction with uniform pressure, therefore, pressure mitigation portion 138,148 has comparatively large vol, in contrast, the pressure mitigation portion 258 of Vacuum exhaust tube 250 is for collecting the space to outside expellant gas, therefore, needn't reduce pressure to discharge equably.
Below, the apparatus for atomic layer deposition 200 relating to reference to the accompanying drawings of another embodiment of the present invention.With reference to Fig. 5 to Fig. 7, the apparatus for atomic layer deposition 200 that another embodiment of the present invention relates to can comprise: chamber 201, forms airtight reaction compartment therein; First outlet pipe 230, discharges the first gas to the substrate 210 that is arranged at chamber 201 inside; Second exhaust pipe 240, discharges the second gas to substrate 210; Vacuum exhaust tube 250, is arranged between first outlet pipe 230 and second exhaust pipe 240, for form vacuum between first outlet pipe 230 and second exhaust pipe 240.
Different from the apparatus for atomic layer deposition 100 shown in Fig. 1, in apparatus for atomic layer deposition 200 shown in Fig. 5,240 of first outlet pipe 230 and second exhaust pipes have to the function of substrate 210 supply gas, do not have the function that sucks the first/the second gas and discharge to chamber 201 outsides.In addition, first/second exhaust pipe 230,240 and Vacuum exhaust tube 250 have same shape.
Preferably, substrate 210, substrate temperature adjusting portion 220, first/second exhaust pipe 230,240, Vacuum exhaust tube 250 are set in chamber 201 inside, and the upper end of first/second exhaust pipe 230,240 and Vacuum exhaust tube 250 is exposed to chamber 201 outsides.
Apparatus for atomic layer deposition 200 can also comprise: the first gas supply part 260, be connected in first outlet pipe 230, and supply with the first gas (source gas); The second gas supply part 270, is connected in second exhaust pipe 240, supplies with the second gas (reactant gases); And vacuumize portion 280, be connected in Vacuum exhaust tube 250, in the inner vacuum that forms of chamber 201.At this, vacuumize portion 280 and be only connected with Vacuum exhaust tube 250, and be not connected with first/second exhaust pipe 230,240.
The first gas supply part 260 is connected with first outlet pipe 230 by the first gas supply pipe road 261, and the second gas supply part 270 is connected with second exhaust pipe 240 by the second gas supply pipe road 271, vacuumizes portion 280 and is connected with Vacuum exhaust tube 250 by vacuum pipe 281.
The first gas supply pipe road 261, the second gas supply pipe road 271 and vacuum pipe 281 can be connected with air feed interface 231a, the 241a, the 251a that are formed at first outlet pipe 230, second exhaust pipe 240 and Vacuum exhaust tube 250 upper ends respectively, to inject or Exhaust Gas.The first gas supply pipe road 261, the second gas supply pipe road 271 and vacuum pipe 281 can be directly connected in air feed interface 231a, 241a, 251a, or as shown in Figure 5, can be connected in and surround air feed interface 231a, 241a, 251a carry out airtight suction gas collection unit 269,279,289.
(a) of Fig. 7 shows the stereographic map of vapor pipe 230,240 or Vacuum exhaust tube 250, and (b) of Fig. 7 shows along the cross section of the cutting line " B-B " of (a) of Fig. 7.
As mentioned above, the first outlet pipe 230, second exhaust pipe 240 and the Vacuum exhaust tube 250 that in the apparatus for atomic layer deposition 200 relating in another embodiment of the present invention, use can have same shape.But according to circumstances, Vacuum exhaust tube 250 also can have different shapes.
With reference to Fig. 7, first outlet pipe 230 and second exhaust pipe 240 can comprise: air-supply duct 231,241, is formed with therein for flow channel 235,245; Vapor pipe body 234,244, is formed with and the pressure mitigation portion 238,248 being communicated with for flow channel 235,245 therein; And exhaust portion 237,247, be formed at pressure mitigation portion 238,248 with supplying flow channel 235,245 opposed modes.
Be communicated with by spray nozzle of the gas supply 236,246 for flow channel 235,245 and pressure mitigation portion 238,248, pressure mitigation portion 238,248 is communicated with the exhaust portion 237,247 of opening towards substrate 210.Between exhaust portion 237,247 can be formed on and vapor pipe body 234,244 is integrally formed exhaust guide part 237a, 247a.
The internal volume of the pressure mitigation portion 238,248 of first outlet pipe 230 and second exhaust pipe 240 can be greater than the internal volume for flow channel 235,245.The pressure mitigation portion 138,148 of the apparatus for atomic layer deposition 100 that the pressure mitigation portion 238,248 of first/second exhaust pipe 230,240 relates to one embodiment of the invention is identical, repeats identical explanation therefore omit.
The apparatus for atomic layer deposition 200 that another embodiment of the present invention relates to, supply with the first gas (source gas) and the second gas (reactant gases) by first/second exhaust pipe 230,240 to substrate 210, suck the first/the second gas and to the outer discharge of chamber 201 by Vacuum exhaust tube 250.Vacuum exhaust tube 250 not only can, to the first/the second residual gas after the outer discharge reaction of chamber 201, also can regulate the pressure in chamber 201, also can make to form vacuum between first outlet pipe 230 and second exhaust pipe 240.In addition,, by Vacuum exhaust tube 250 being placed between first outlet pipe 230 and second exhaust pipe 240, also can stop reaction between the first gas (source gas) and the second gas (reactant gases).
The apparatus for atomic layer deposition 200 that another embodiment of the present invention relates to, can be by vacuumizing the 280(Bar Dry Pump of portion) operation pressure of chamber 201 inside is adjusted to 0.1～0.2torr left and right.
The apparatus for atomic layer deposition 200 that another embodiment of the present invention relates to, identical with the apparatus for atomic layer deposition 100 shown in Fig. 1, can also comprise chamber dry pump, this chamber dry pump is connected in chamber 201, makes the inner vacuum that forms of chamber 201.
Fig. 8 illustrates that the gas suction unit 130,140 of apparatus for atomic layer deposition 100 that one embodiment of the invention relate to or the vapor pipe 230,240 of the apparatus for atomic layer deposition 200 that another embodiment of the present invention relates to and connected gas injection press the sectional view of regulon 190.
Gas injection presses the regulon 190 can adjusting gas flow or pressure, to spray equably the first/the second gas with uniform pressure to substrate 110,120 in the whole length of gas suction unit 130,140 or vapor pipe 230,240.
Gas injection presses regulon 190 to form one group by gas flow control part 191, air supply valve 192 and air feed isocon 193,194,195.Gas suction unit 130,140 is longer, and the quantity of this group can increase.Although not shown, gas injection presses regulon 190 to be formed with multiple according to the length of gas suction unit 130,140.For example, can in the whole length of gas suction unit 130,140, be formed with three gas injections and press regulon 192.Can form respectively a gas injection in right side part, middle portion and the left part of the whole length of gas suction unit 130,140 and press regulon 192.Like this, in the time that gas suction unit 130,140 is elongated, multiple gas injections can be set and press regulon 190, and make gas multi-stage diffluence by gas flow control part 191 respectively, thereby pressure that can adjustments of gas suction unit 130,140 whole length, can improve uniformity coefficient (uniformity).
Gas injection is pressed regulon 190 to be connected in and is supplied flow channel 135,145,235,245 with supply gas, make to spray the whole length that is pressed in gas suction unit 130,140 or vapor pipe 230,240 even from vapor pipe 134,144,230,240 expellant gas.
Gas injection presses regulon 190 to comprise: gas flow control part 191, and it is connected with gas supply part 160,170,260,270, to regulate the gas flow of supplying with from gas supply part 160,170,260,270; Air supply valve 192, is connected in gas flow control part 191, supplies with to control gas; And air feed isocon 193,194,195, be connected in air supply valve 192 and between flow channel 135,145,235,245, with to for flow channel 135,145,235,245 supply gas.
Gas flow control part 191 is connected in gas supply part 160,170,260,270 by gas supply pipe road 161,171,261,271, is the mass flow controller (MFC, Mass Flow Controller) of the gas flow (Mass Flow) for regulating supply.
The air supply valve 192 that is connected in gas flow control part 91 is a kind of switch on and off (On/Off Switch), for stoping or allowing the gas inject that is supplied to gas suction unit 130,140 or the switch of vapor pipe 230,240, can be with the form realization of valve.Air supply valve 192 regulates the dividing potential drop (partial pressure) of jet flow stream, thereby can improve the uniformity coefficient (uniformity) of jet flow stream.
Air feed isocon 193,194,195 can be from air supply valve 192 to gas suction unit 130,140 or vapor pipe 230,240 be formed as multistage.Fig. 8 exemplifies air feed isocon 193,194,195 by three grades of forms of shunting downwards.Like this, air feed isocon 193,194,195 is multistage along with getting off downwards from top to form, can regulate multiple gas output point 195(the 3rd gas to supply with isocons by controlling a gas input point (being gas flow control part)) flow, gaseous tension etc., can come in the whole length of gas suction unit 130,140 or vapor pipe 230,240 with uniform pressure jet flow stream by the quantity that increases gas output point.
Air feed isocon 193,194,195 possesses: input interface 193a, is connected in air supply valve 192; Output interface 195a, is connected in for flow channel 135,145,235,245; Wherein, the quantity of input interface 193a can be less than the quantity of output interface 195a.That is, air feed isocon 193,194,195 is formed as multistage, thereby can form more output interface 195a, therefore can be with uniform pressure jet flow stream in the whole length of gas suction unit 130,140 or vapor pipe 230,240.
Fig. 9 shows the variation of the apparatus for atomic layer deposition shown in Fig. 1.Apparatus for atomic layer deposition 300 shown in Fig. 9 can comprise atmospheric plasma generating unit 340, Vacuum exhaust tube 350, the first gas (source gas) suction unit 330 and halogen lamp 990.Now, substrate 310 can carry out to the right with respect to gas suction unit 330 depositing operation when relative movement from left side.
Apparatus for atomic layer deposition 300 shown in Fig. 9 can deposit atomic shell under normal pressure, during therefore to substrate 310 supply response gas, can use atmospheric plasma generating unit 340.Cold plasma torch (cold plasma torch) is carried out imagery by atmospheric plasma generating unit 340.Atmospheric plasma generating unit 340 supply response gases, so while using atmospheric plasma generating unit 340, can omit the second gas (reactant gases) suction unit 140.
As mentioned above, be illustrated with the specific items such as concrete integrant and specific embodiment and accompanying drawing in one embodiment of this invention, this just contributes to understand on the whole the present invention provides, the present invention is not limited to described embodiment, for general technical staff of the technical field of the invention, can carry out numerous variations and distortion from these records.Therefore, thought of the present invention is not limited to the embodiment describing, and protection scope of the present invention, not only with claims, all belongs in thought category of the present invention with its distortion impartial or of equal value.
Claims (16)
1. an apparatus for atomic layer deposition, comprising:
Chamber, is formed with airtight reaction compartment in inside;
The first gas suction unit, sucks or discharges the first gas to the substrate that is positioned at described chamber interior;
The second gas suction unit, sucks or discharges the second gas to described substrate; And
Vacuum exhaust tube, is arranged between described the first gas suction unit and described the second gas suction unit, for form vacuum between described the first gas suction unit and described the second gas suction unit;
Described substrate along with described the first gas suction unit, described the second gas suction unit or described Vacuum exhaust tube at least one the length direction direction of intersecting carry out relative movement.
2. apparatus for atomic layer deposition according to claim 1, is characterized in that, also comprises:
The first gas supply part, is connected in described the first gas suction unit, to supply with the first gas;
The second gas supply part, is connected in described the second gas suction unit, to supply with the second gas; And
Vacuumize portion, be connected in described Vacuum exhaust tube, for forming vacuum in described chamber interior;
The described portion of vacuumizing is also connected with at least one in described the first gas suction unit or described the second gas suction unit.
3. apparatus for atomic layer deposition according to claim 2, is characterized in that, described the first gas suction unit and described the second gas suction unit comprise:
Air-supply duct, is formed with in inside for flow channel;
Vapor pipe, is formed with in inside and the described pressure mitigation portion being communicated with for flow channel; And
Air suction pipe, at least a portion of surrounding described vapor pipe periphery, to form air-breathing runner in inside.
4. apparatus for atomic layer deposition according to claim 3, is characterized in that,
The internal volume of described pressure mitigation portion is greater than the described internal volume for flow channel.
5. apparatus for atomic layer deposition according to claim 3, is characterized in that,
Be formed with at least one air feed interface being connected with described the first gas supply part or described the second gas supply part at described air-supply duct.
6. apparatus for atomic layer deposition according to claim 5, is characterized in that,
Be formed with at least one exhaust port being connected with the described portion of vacuumizing at described air suction pipe.
7. apparatus for atomic layer deposition according to claim 6, is characterized in that,
Described exhaust port is formed on the suction gas collection unit of described chamber and surrounds with air-tight manner,
Described suction gas collection unit with described in the portion of vacuumizing be connected.
8. apparatus for atomic layer deposition according to claim 3, is characterized in that, described Vacuum exhaust tube comprises:
Extraction pipe, is formed with the runner of bleeding being connected with the described portion of vacuumizing in inside;
Air-breathing guide portion, is formed with the air-breathing interface being communicated with the described runner of bleeding in inside.
9. apparatus for atomic layer deposition according to claim 8, is characterized in that,
Described Vacuum exhaust tube also comprises extraction pipe, described extraction pipe inside have bleed described in connection runner and described in the pressure mitigation portion of bleeding between interface.
10. an apparatus for atomic layer deposition, comprising:
Chamber, is formed with airtight reaction compartment in inside;
First outlet pipe, discharges the first gas to the substrate that is positioned at described chamber interior;
Second exhaust pipe, discharges the second gas to described substrate; And
Vacuum exhaust tube, is arranged between described first outlet pipe and described second exhaust pipe, for form vacuum between described first outlet pipe and described second exhaust pipe;
Described substrate along with described first outlet pipe, described second exhaust pipe or described Vacuum exhaust tube at least one the length direction direction of intersecting carry out relative movement.
11. apparatus for atomic layer deposition according to claim 10, is characterized in that, also comprise:
The first gas supply part, is connected in described first outlet pipe, to supply with the first gas;
The second gas supply part, is connected in described second exhaust pipe, to supply with the second gas; And
Vacuumize portion, be connected in described Vacuum exhaust tube, for forming vacuum in described chamber interior.
12. apparatus for atomic layer deposition according to claim 11, is characterized in that, described first outlet pipe and described second exhaust pipe comprise:
Air-supply duct, is formed with in inside for flow channel;
Vapor pipe body, is formed with in inside and the described pressure mitigation portion being communicated with for flow channel; And
Exhaust portion, to be formed at described pressure mitigation portion with described for flow channel opposed mode.
13. apparatus for atomic layer deposition according to claim 12, is characterized in that,
The internal volume of described pressure mitigation portion is greater than the described internal volume for flow channel.
14. apparatus for atomic layer deposition according to claim 12, is characterized in that,
Be formed with at least one air feed interface being connected with described the first gas supply part or described the second gas supply part at described air-supply duct.
15. apparatus for atomic layer deposition according to claim 14, is characterized in that,
Described Vacuum exhaust tube is formed as the shape identical with described first outlet pipe or described second exhaust pipe.
16. according to the apparatus for atomic layer deposition described in any one in claim 1 to 15, it is characterized in that, also comprises:
Chamber dry pump, described chamber dry pump is connected in described chamber, for forming vacuum in described chamber interior.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2012-0145239 | 2012-12-13 | ||
| KR1020120145239A KR101541155B1 (en) | 2012-12-13 | 2012-12-13 | atomic layer deposition apparatus |
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| CN103866287A true CN103866287A (en) | 2014-06-18 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107644949A (en) * | 2016-07-21 | 2018-01-30 | Ncd有限公司 | The method that inorganic thin layer is formed on OLED |
| CN109750274A (en) * | 2017-11-01 | 2019-05-14 | 长鑫存储技术有限公司 | Semiconductor production equipment and semiconductor process method |
| CN111933556A (en) * | 2020-09-22 | 2020-11-13 | 南京莉上网络科技有限公司 | Semiconductor chip manufacturing substrate processing equipment |
| CN114672788A (en) * | 2022-03-11 | 2022-06-28 | 北京北方华创微电子装备有限公司 | Semiconductor deposition apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102337807B1 (en) * | 2014-11-14 | 2021-12-09 | 삼성디스플레이 주식회사 | Thin film deposition apparatus |
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| CN101360846A (en) * | 2006-03-24 | 2009-02-04 | 三菱重工业株式会社 | Electrode and vacuum processing apparatus |
| US20120225203A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
| KR20120111108A (en) * | 2011-03-31 | 2012-10-10 | 한양대학교 산학협력단 | Gas injection apparatus, atomic layer deposition apparatus and the method of atomic layer deposition using the same |
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| JP4292623B2 (en) | 1999-04-27 | 2009-07-08 | 旭硝子株式会社 | Method for forming tin oxide film |
| WO2010095901A2 (en) | 2009-02-23 | 2010-08-26 | Synos Technology, Inc. | Method for forming thin film using radicals generated by plasma |
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| CN101360846A (en) * | 2006-03-24 | 2009-02-04 | 三菱重工业株式会社 | Electrode and vacuum processing apparatus |
| US20120225203A1 (en) * | 2011-03-01 | 2012-09-06 | Applied Materials, Inc. | Apparatus and Process for Atomic Layer Deposition |
| KR20120111108A (en) * | 2011-03-31 | 2012-10-10 | 한양대학교 산학협력단 | Gas injection apparatus, atomic layer deposition apparatus and the method of atomic layer deposition using the same |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107644949A (en) * | 2016-07-21 | 2018-01-30 | Ncd有限公司 | The method that inorganic thin layer is formed on OLED |
| CN107644949B (en) * | 2016-07-21 | 2020-11-24 | Ncd有限公司 | Method for forming inorganic thin layer on OLED |
| CN109750274A (en) * | 2017-11-01 | 2019-05-14 | 长鑫存储技术有限公司 | Semiconductor production equipment and semiconductor process method |
| CN111933556A (en) * | 2020-09-22 | 2020-11-13 | 南京莉上网络科技有限公司 | Semiconductor chip manufacturing substrate processing equipment |
| CN114672788A (en) * | 2022-03-11 | 2022-06-28 | 北京北方华创微电子装备有限公司 | Semiconductor deposition apparatus |
| CN114672788B (en) * | 2022-03-11 | 2024-01-05 | 北京北方华创微电子装备有限公司 | Semiconductor deposition apparatus |
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| KR20140076795A (en) | 2014-06-23 |
| KR101541155B1 (en) | 2015-08-06 |
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Application publication date: 20140618 |