CN107644813A - The passivating method of gallium nitride epitaxial slice - Google Patents
The passivating method of gallium nitride epitaxial slice Download PDFInfo
- Publication number
- CN107644813A CN107644813A CN201710826751.2A CN201710826751A CN107644813A CN 107644813 A CN107644813 A CN 107644813A CN 201710826751 A CN201710826751 A CN 201710826751A CN 107644813 A CN107644813 A CN 107644813A
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- gallium
- layer
- source
- epitaxial slice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention discloses a kind of passivating method of gallium nitride epitaxial slice, it is related to technical field of semiconductors.This method comprises the following steps：In Grown epitaxial layer of gallium nitride；Barrier layer is grown on the epitaxial layer of gallium nitride；Aluminium atom is deposited on the barrier layer；By gallium nitride epitaxial slice exposure in atmosphere, to cause the gallium nitride epitaxial slice aoxidizes in atmosphere to form oxide layer as passivation layer.The present invention can improve the surface state of material, effectively suppress current collapse phenomenon, and passivation protection layer is generated by autoxidation in atmosphere, it is not necessary to which extra equipment, preparation method are simple.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of passivating method of gallium nitride epitaxial slice.
Background technology
Gallium nitride（GaN）Material is due to having the characteristics that wide energy gap, high velocity of electrons, in photoelectron and microelectronics
Field development prospect is very wide.There is because of crystal due to gallium nitride heterojunction material for gallium nitride heterojunction field-effect transistor
Surface state caused by defect, in high-field stress, the electron trap on heterojunction material surface can capture caused thermoelectricity under High-Field
Son, the electrons of material surface aggregation produce depletion action, make the deterioration parameters such as saturation current, the mutual conductance of device.Material surface
The presence of state can make device produce current collapse phenomenon when high-frequency high-power is applied, and make the performance degradation of device.
The content of the invention
In view of this, the embodiment of the present invention provides a kind of passivating method of gallium nitride epitaxial slice, to solve in the prior art
Because the technical problem that surface state causes the performance degradation of gallium nitride device be present in gallium nitride heterojunction material surface.
In order to solve the above technical problems, the technical solution used in the present invention is：
A kind of passivating method of gallium nitride epitaxial slice, comprises the following steps：
In Grown epitaxial layer of gallium nitride；
Barrier layer is grown on the epitaxial layer of gallium nitride；
Aluminium atom is deposited on the barrier layer；
By gallium nitride epitaxial slice exposure in atmosphere, to cause the gallium nitride epitaxial slice aoxidizes in atmosphere to form oxidation
Layer is used as passivation layer.
It is described in Grown epitaxial layer of gallium nitride in the first possible implementation, specifically include：
Gallium source and nitrogen source are passed through to reative cell by carrier gas；
By MOCVD in substrate Epitaxial growth epitaxial layer of gallium nitride.
With reference to the first possible implementation, in second of possible implementation, the gallium source is trimethyl gallium
Or triethyl-gallium, the nitrogen source are ammonia.
In the third possible implementation, the barrier layer is AlGaN potential barrier；It is described in the epitaxy of gallium nitride
Barrier layer is grown on layer, is specifically included：
Nitrogen source, gallium source and silicon source are passed through to reative cell by carrier gas；
By MOCVD in the epitaxial layer of gallium nitride Epitaxial growth AlGaN potential barrier.
With reference to the third possible implementation, in the 4th kind of possible implementation, the nitrogen source is ammonia, described
Gallium source is trimethyl gallium or triethyl-gallium, and source of aluminium is trimethyl aluminium.
With reference to the third possible implementation, in the 5th kind of possible implementation, the life of the AlGaN potential barrier
Long temperature is 400 DEG C to 1350 DEG C.
It is described on the barrier layer in the 6th kind of possible implementation with reference to the third possible implementation
Aluminium atom is deposited, is specifically included：
Turn off the nitrogen source for being passed through the reative cell and gallium source, silicon source is passed through in the reative cell by carrier gas；Wherein, source of aluminium
For trimethyl aluminium；
Aluminium atom is deposited in the AlGaN potential barrier by MOCVD.
With reference to the 6th kind of possible implementation, in the 7th kind of possible implementation, the deposition temperature of the aluminium atom
Spend for 300 DEG C to 1600 DEG C.
With reference to the first to the 7th kind of possible implementation, in the 8th kind of possible implementation, the carrier gas is
Hydrogen or nitrogen.
It is described by outside the gallium nitride in the 9th kind of possible implementation with reference to the 6th kind of possible implementation
Prolong piece exposure in atmosphere, the gallium nitride epitaxial slice to aoxidize to be formed oxide layer in atmosphere as passivation layer, specifically
Including：
Close and be passed through the trimethyl aluminium of the reative cell, be passed through hydrogen or nitrogen in the reative cell, and by the reative cell
Temperature be down to room temperature；
The gallium nitride epitaxial slice is taken out from the reative cell, to cause the gallium nitride epitaxial slice exposure in atmosphere, and
Oxidation forms alumina passivation layer in atmosphere.
It is using beneficial effect caused by above-mentioned technical proposal：The embodiment of the present invention passes through on gallium nitride epitaxial slice
Growth of passivation protective layer, the surface state of material can be improved, effectively suppress current collapse phenomenon, and aluminium oxide passivation is protected
Layer is generated by autoxidation in atmosphere, it is not necessary to which extra equipment, preparation method are simple.
Brief description of the drawings
Fig. 1 is the implementation process schematic diagram of the passivating method for the gallium nitride epitaxial slice that example of the embodiment of the present invention one provides；
Fig. 2 is the temperature profile of growing gallium nitride epitaxial wafer on graphene substrate that the embodiment of the present invention two provides.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, accompanying drawing is compareed below and is combined implements
Example, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only explaining this hair
It is bright, it is not intended to limit the present invention.
Embodiment one
Fig. 1 is refer to, the passivating method of gallium nitride epitaxial slice, is comprised the following steps：
Step S101, in Grown epitaxial layer of gallium nitride.
Optionally, step S101 specific implementation is：Gallium source and nitrogen source are passed through to reative cell by carrier gas；Pass through gold
Belong to organic compound chemical vapor deposition in substrate Epitaxial growth epitaxial layer of gallium nitride.
Further, the gallium source is trimethyl gallium or triethyl-gallium, and the nitrogen source is ammonia.
Further, the carrier gas is hydrogen or nitrogen.
In embodiments of the present invention, substrate includes but is not limited to Sapphire Substrate, silicon nitrate substrate and graphene substrate.It is logical
Cross MOCVD method（Metal-organic Chemical Vapor Deposition, MOCVD）
In Grown epitaxial layer of gallium nitride.In epitaxial growth epitaxial layer of gallium nitride, carrier gas is used as by three by hydrogen or nitrogen
Methyl gallium or triethyl-gallium and ammonia are passed through in reative cell, and trimethyl gallium or triethyl-gallium and ammonia are with thermal decomposition manner in substrate
Enterprising promoting the circulation of qi phase epitaxy forms epitaxial layer of gallium nitride.Wherein, epitaxial growth temperature is 300 DEG C to 1600 DEG C, growth pressure 10
To 1000mbar.Molecular beam epitaxy can also be passed through（Molecular Beam Epitaxy, MBE）, chemical vapor deposition
（Chemical Vapor Deposition, CVD）And hydride gas-phase epitaxy（Hydride Vapor Phase Epitaxy,
HVPE）Growing gallium nitride epitaxial layer.
Step S102, grow barrier layer on the epitaxial layer of gallium nitride.
Optionally, the barrier layer is AlGaN potential barrier.Step S102 specific implementation is：By carrier gas to anti-
Room is answered to be passed through nitrogen source, gallium source and silicon source；By MOCVD on the epitaxial layer of gallium nitride it is outer
Epitaxial growth AlGaN potential barrier.
Further, the nitrogen source is ammonia, and the gallium source is trimethyl gallium or triethyl-gallium, and source of aluminium is trimethyl
Aluminium.
Further, the growth temperature of the AlGaN potential barrier is 400 DEG C to 1350 DEG C.
Further, the carrier gas is hydrogen or nitrogen.
In embodiments of the present invention, barrier layer is AlGaN potential barrier.Grown by MOCVD on epitaxial layer of gallium nitride
AlGaN potential barrier.In epitaxial growth AlGaN potential barrier, carrier gas is used as by nitrogen source ammonia, gallium source front three by hydrogen or nitrogen
Base gallium or triethyl-gallium and silicon source trimethyl aluminium are passed through in reative cell, and nitrogen source, gallium source and silicon source are with thermal decomposition manner on substrate
Carry out vapour phase epitaxy and form AlGaN potential barrier.Wherein, epitaxial growth temperature is 400 DEG C to 1350 DEG C.Can also by MBE,
CVD and HVPE growth AlGaN potential barriers.
Step S103, aluminium atom is deposited on the barrier layer.
Optionally, step S103 specific implementation is：Turn off the nitrogen source for being passed through the reative cell and gallium source, to described
Reative cell is passed through silicon source；Wherein, source of aluminium is trimethyl aluminium；Aluminium atom is deposited on the barrier layer.
Further, the depositing temperature of the aluminium atom is 300 DEG C to 1600 DEG C.
Step S104, by gallium nitride epitaxial slice exposure in atmosphere, to cause the gallium nitride epitaxial slice in air
Middle oxidation forms oxide layer as passivation layer.
Further, step S104 specific implementation is：The trimethyl aluminium for being passed through the reative cell is closed, described
Hydrogen or nitrogen are passed through in reative cell, and the temperature of the reative cell is down to room temperature；By the gallium nitride epitaxial slice from described
Reative cell takes out, and to cause the gallium nitride epitaxial slice exposure in atmosphere, and oxidation forms alumina passivation layer in atmosphere.
The embodiment of the present invention can improve the surface state of material by the growth of passivation protective layer on gallium nitride epitaxial slice,
Effectively suppress current collapse phenomenon, and aluminium oxide passivation protective layer is generated by autoxidation in atmosphere, it is not necessary to volume
Outer equipment, prepare simple.
Embodiment two
Refer to Fig. 2, Fig. 2 be the embodiment of the present invention two provide by MOCVD methods on graphene substrate growing gallium nitride
The curve map of epitaxial wafer, first, hydrogen is passed through in reative cell, in 0s to 800s periods, reaction chamber temperature is increased to
1000 °C, and in 800s to 1500s periods, 1000 °C are maintained the temperature at, high-temperature baking is carried out to substrate, to remove substrate
The impurity on surface.In 1500s to 1800s periods, the temperature of reative cell is reduced to 580 °C, and in 1800s to 2000s
In period, keeping temperature is 580 °C constant, gallium source and nitrogen source is passed through to reative cell by carrier gas, in Grown low temperature
GaN nucleating layers.In 2000s to 2500s periods, the temperature of reative cell is again raised to 1000 °C, and in 2500s extremely
In the 5000s periods, by the temperature control of reative cell at 1000 °C, continue through carrier gas and be passed through nitrogen source, gallium source to reative cell, it is raw
Long high temperature GaN epitaxial layer, nitrogen source, gallium source and silicon source are passed through to reative cell by carrier gas afterwards, grown in GaN epitaxial layer
AlGaN potential barrier.After closing nitrogen source, gallium source and silicon source, in 5000s to 5100s periods, reaction chamber temperature is reduced to
800 °C, and in 5100s to 5200s periods, keep reaction chamber temperature constant, aluminium is passed through to the reative cell by carrier gas
Source, aluminium atom passivation layer is deposited, reduces reaction chamber temperature afterwards.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. a kind of passivating method of gallium nitride epitaxial slice, it is characterised in that comprise the following steps：
In Grown epitaxial layer of gallium nitride；
Barrier layer is grown on the epitaxial layer of gallium nitride；
Aluminium atom is deposited on the barrier layer；
By gallium nitride epitaxial slice exposure in atmosphere, to cause the gallium nitride epitaxial slice aoxidizes in atmosphere to form oxidation
Layer is used as passivation layer.
2. the passivating method of gallium nitride epitaxial slice as claimed in claim 1, it is characterised in that described to be nitrogenized in Grown
Gallium epitaxial layer, is specifically included：
Gallium source and nitrogen source are passed through to reative cell by carrier gas；
By MOCVD in substrate Epitaxial growth epitaxial layer of gallium nitride.
3. the passivating method of gallium nitride epitaxial slice as claimed in claim 2, it is characterised in that the gallium source be trimethyl gallium or
Triethyl-gallium, the nitrogen source are ammonia.
4. the passivating method of gallium nitride epitaxial slice as claimed in claim 1, it is characterised in that the barrier layer is AlGaN gesture
Barrier layer；It is described to grow barrier layer on the epitaxial layer of gallium nitride, specifically include：
Nitrogen source, gallium source and silicon source are passed through to reative cell by carrier gas；
By MOCVD in the epitaxial layer of gallium nitride Epitaxial growth AlGaN potential barrier.
5. the passivating method of gallium nitride epitaxial slice as claimed in claim 4, it is characterised in that the nitrogen source is ammonia, described
Gallium source is trimethyl gallium or triethyl-gallium, and source of aluminium is trimethyl aluminium.
6. the passivating method of gallium nitride epitaxial slice as claimed in claim 4, it is characterised in that the life of the AlGaN potential barrier
Long temperature is 400 DEG C to 1350 DEG C.
7. the passivating method of gallium nitride epitaxial slice as claimed in claim 4, it is characterised in that described to be sunk on the barrier layer
Product aluminium atom, is specifically included：
Turn off the nitrogen source for being passed through the reative cell and gallium source, silicon source is passed through to the reative cell by carrier gas；Wherein, source of aluminium
For trimethyl aluminium；
Aluminium atom is deposited in the AlGaN potential barrier by MOCVD.
8. the passivating method of gallium nitride epitaxial slice as claimed in claim 7, it is characterised in that the depositing temperature of the aluminium atom
For 300 DEG C to 1600 DEG C.
9. the passivating method of the gallium nitride epitaxial slice as described in claim any one of 2-8, it is characterised in that the carrier gas is hydrogen
Gas or nitrogen.
10. the passivating method of gallium nitride epitaxial slice as claimed in claim 7, it is characterised in that described by outside the gallium nitride
Prolong piece exposure in atmosphere, the gallium nitride epitaxial slice to aoxidize to be formed oxide layer in atmosphere as passivation layer, specifically
Including：
Close and be passed through the trimethyl aluminium of the reative cell, be passed through hydrogen or nitrogen in the reative cell, and by the reative cell
Temperature be down to room temperature；
The gallium nitride epitaxial slice is taken out from the reative cell, to cause the gallium nitride epitaxial slice exposure in atmosphere, and
Oxidation forms alumina passivation layer in atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710826751.2A CN107644813B (en) | 2017-09-14 | 2017-09-14 | Passivation method of gallium nitride epitaxial wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710826751.2A CN107644813B (en) | 2017-09-14 | 2017-09-14 | Passivation method of gallium nitride epitaxial wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107644813A true CN107644813A (en) | 2018-01-30 |
| CN107644813B CN107644813B (en) | 2020-11-24 |
Family
ID=61110361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710826751.2A Active CN107644813B (en) | 2017-09-14 | 2017-09-14 | Passivation method of gallium nitride epitaxial wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107644813B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1411148A1 (en) * | 2002-10-15 | 2004-04-21 | ALSTOM Technology Ltd | Method of depositing a MCrALY-coating on an article and the coated article |
| WO2010087362A1 (en) * | 2009-01-28 | 2010-08-05 | 東京エレクトロン株式会社 | Film formation method, and plasma film formation apparatus |
| CN102820397A (en) * | 2011-06-09 | 2012-12-12 | Lg伊诺特有限公司 | Light emitting diode, light emitting device package including the same and lighting system |
| US20160087052A1 (en) * | 2014-09-19 | 2016-03-24 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN106486363A (en) * | 2015-09-01 | 2017-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Group III-nitride enhancement mode HEMT based on p-type layer and preparation method thereof |
-
2017
- 2017-09-14 CN CN201710826751.2A patent/CN107644813B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1411148A1 (en) * | 2002-10-15 | 2004-04-21 | ALSTOM Technology Ltd | Method of depositing a MCrALY-coating on an article and the coated article |
| WO2010087362A1 (en) * | 2009-01-28 | 2010-08-05 | 東京エレクトロン株式会社 | Film formation method, and plasma film formation apparatus |
| CN102820397A (en) * | 2011-06-09 | 2012-12-12 | Lg伊诺特有限公司 | Light emitting diode, light emitting device package including the same and lighting system |
| US20160087052A1 (en) * | 2014-09-19 | 2016-03-24 | Kabushiki Kaisha Toshiba | Semiconductor device |
| CN106486363A (en) * | 2015-09-01 | 2017-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Group III-nitride enhancement mode HEMT based on p-type layer and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107644813B (en) | 2020-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5533661B2 (en) | Compound semiconductor device and manufacturing method thereof | |
| US8569800B2 (en) | Field effect transistor | |
| US9349806B2 (en) | Semiconductor structure with template for transition metal dichalcogenides channel material growth | |
| CN102931229B (en) | A kind of AlGaN/GaN/InGaN double heterojunction material and production method thereof | |
| JPWO2006022453A1 (en) | GaN-based field effect transistor and manufacturing method thereof | |
| JP7013710B2 (en) | Manufacturing method of nitride semiconductor transistor | |
| US9076812B2 (en) | HEMT structure with iron-doping-stop component and methods of forming | |
| JP2009049121A (en) | Heterojunction type field effect transistor and production method thereof | |
| JP2016207748A (en) | Method of manufacturing semiconductor device, and semiconductor device | |
| JP2011023677A (en) | Compound semiconductor epitaxial wafer, and method of manufacturing the same | |
| CN105047695A (en) | High-resistance substrate for high-electron-mobility transistor and growing method thereof | |
| CN105336770A (en) | Gallium nitride based high electron mobility transistor epitaxial structure and manufacturing method thereof | |
| JP5436819B2 (en) | High-frequency semiconductor element, epitaxial substrate for forming high-frequency semiconductor element, and method for producing epitaxial substrate for forming high-frequency semiconductor element | |
| CN105322009A (en) | Gallium nitride based high electronic mobility transistor epitaxial structure and manufacturing method therefor | |
| JP2013008836A (en) | Nitride semiconductor device | |
| CN113555431A (en) | Homoepitaxy gallium nitride high electron mobility transistor based on P-type GaN leakage isolation layer and manufacturing method | |
| CN110838514B (en) | Epitaxial structure of semiconductor device, preparation method of epitaxial structure and semiconductor device | |
| US11183385B2 (en) | Method for passivating silicon carbide epitaxial layer | |
| CN107644813A (en) | The passivating method of gallium nitride epitaxial slice | |
| TWI572036B (en) | Nitride crystal structure | |
| US10777654B2 (en) | Method for manufacturing nitrogen-face polarity gallium nitride epitaxial structure | |
| JP5455875B2 (en) | Epitaxial substrate manufacturing method | |
| JP5616420B2 (en) | Epitaxial substrate for forming high-frequency semiconductor element and method for producing epitaxial substrate for forming high-frequency semiconductor element | |
| CN107546261A (en) | Semi-insulating GaN film and high electronic migration rate transmistor epitaxial structure | |
| US20170256635A1 (en) | Nitride semiconductor and nitride semiconductor manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |