CN107644813B - Passivation method of gallium nitride epitaxial wafer - Google Patents
Passivation method of gallium nitride epitaxial wafer Download PDFInfo
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- CN107644813B CN107644813B CN201710826751.2A CN201710826751A CN107644813B CN 107644813 B CN107644813 B CN 107644813B CN 201710826751 A CN201710826751 A CN 201710826751A CN 107644813 B CN107644813 B CN 107644813B
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Abstract
The invention discloses a passivation method of a gallium nitride epitaxial wafer, and relates to the technical field of semiconductors. The method comprises the following steps: growing a gallium nitride epitaxial layer on a substrate; growing a barrier layer on the gallium nitride epitaxial layer; depositing aluminum atoms on the barrier layer; and exposing the gallium nitride epitaxial wafer in air, so that the gallium nitride epitaxial wafer is oxidized in the air to form an oxide layer as a passivation layer. The invention can improve the surface state of the material, effectively inhibit the current collapse phenomenon, and the passivation protective layer is generated by natural oxidation in the air, without additional equipment, and the preparation method is simple.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a passivation method of a gallium nitride epitaxial wafer.
Background
Gallium nitride (GaN) materials have a wide bandgap, high electron velocity, and the like, and thus have a wide development prospect in the fields of photoelectrons and microelectronics. In the gallium nitride heterojunction field effect transistor, because the gallium nitride heterojunction material has a surface state caused by crystal defects, in high field stress, an electron trap on the surface of the heterojunction material can capture hot electrons generated under a high field, and electrons gathered on the surface of the material can generate depletion action, so that parameters of the device, such as saturation current, transconductance and the like, are deteriorated. The existence of the surface state of the material can cause the current collapse phenomenon of the device when the device is applied at high frequency and high power, and the performance of the device is degraded.
Disclosure of Invention
In view of this, embodiments of the present invention provide a passivation method for a gallium nitride epitaxial wafer, so as to solve the technical problem in the prior art that the performance of a gallium nitride device is degraded due to a surface state existing on the surface of a gallium nitride heterojunction material.
In order to solve the technical problems, the technical scheme adopted by the invention is as follows:
a passivation method of a gallium nitride epitaxial wafer comprises the following steps:
growing a gallium nitride epitaxial layer on a substrate;
growing a barrier layer on the gallium nitride epitaxial layer;
depositing aluminum atoms on the barrier layer;
and exposing the gallium nitride epitaxial wafer in air, so that the gallium nitride epitaxial wafer is oxidized in the air to form an oxide layer as a passivation layer.
In a first possible implementation manner, the growing a gallium nitride epitaxial layer on a substrate specifically includes:
introducing a gallium source and a nitrogen source into the reaction chamber through carrier gas;
an epitaxial layer of gallium nitride is epitaxially grown on the substrate by chemical vapor deposition of a metal organic compound.
With reference to the first possible implementation manner, in a second possible implementation manner, the gallium source is trimethyl gallium or triethyl gallium, and the nitrogen source is ammonia gas.
In a third possible implementation, the barrier layer is an AlGaN barrier layer; the growing barrier layer on the gallium nitride epitaxial layer specifically comprises:
introducing a nitrogen source, a gallium source and an aluminum source into the reaction chamber through carrier gas;
an AlGaN barrier layer is epitaxially grown on the gallium nitride epitaxial layer by metal organic chemical vapor deposition.
With reference to the third possible implementation manner, in a fourth possible implementation manner, the nitrogen source is ammonia gas, the gallium source is trimethyl gallium or triethyl gallium, and the aluminum source is trimethyl aluminum.
With reference to the third possible implementation manner, in a fifth possible implementation manner, the growth temperature of the AlGaN barrier layer is 400 ℃ to 1350 ℃.
With reference to the third possible implementation manner, in a sixth possible implementation manner, the depositing aluminum atoms on the barrier layer specifically includes:
turning off a nitrogen source and a gallium source which are introduced into the reaction chamber, and introducing an aluminum source into the reaction chamber through a carrier gas; wherein the aluminum source is trimethylaluminum;
depositing aluminum atoms on the AlGaN barrier layer by metal organic chemical vapor deposition.
With reference to the sixth possible implementation manner, in a seventh possible implementation manner, the deposition temperature of the aluminum atoms is 300 ℃ to 1600 ℃.
With reference to the first to seventh possible implementations, in an eighth possible implementation, the carrier gas is hydrogen or nitrogen.
With reference to the sixth possible implementation manner, in a ninth possible implementation manner, the exposing the gallium nitride epitaxial wafer to air so that the gallium nitride epitaxial wafer is oxidized in air to form an oxide layer as a passivation layer specifically includes:
closing the trimethylaluminum introduced into the reaction chamber, introducing hydrogen or nitrogen into the reaction chamber, and reducing the temperature of the reaction chamber to room temperature;
and taking the gallium nitride epitaxial wafer out of the reaction chamber, so that the gallium nitride epitaxial wafer is exposed in the air and oxidized in the air to form an aluminum oxide passivation layer.
Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: according to the embodiment of the invention, the passivation protective layer is grown on the gallium nitride epitaxial wafer, the surface state of the material can be improved, the current collapse phenomenon is effectively inhibited, the aluminum oxide passivation protective layer is generated by natural oxidation in the air, no additional equipment is needed, and the preparation method is simple.
Drawings
Fig. 1 is a schematic flow chart illustrating an implementation of a passivation method for a gallium nitride epitaxial wafer according to an embodiment of the present invention;
fig. 2 is a temperature profile of a gallium nitride epitaxial wafer grown on a graphene substrate according to a second embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings in combination with embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example one
Referring to fig. 1, a passivation method of a gallium nitride epitaxial wafer includes the following steps:
step S101, growing a gallium nitride epitaxial layer on the substrate.
Optionally, the specific implementation manner of step S101 is: introducing a gallium source and a nitrogen source into the reaction chamber through carrier gas; an epitaxial layer of gallium nitride is epitaxially grown on the substrate by chemical vapor deposition of a metal organic compound.
Further, the gallium source is trimethyl gallium or triethyl gallium, and the nitrogen source is ammonia gas.
Further, the carrier gas is hydrogen or nitrogen.
In embodiments of the present invention, the substrate includes, but is not limited to, a sapphire substrate, a silicon nitride substrate, and a graphene substrate. Gallium nitride epitaxial layers are grown on substrates by Metal-organic Chemical Vapor Deposition (MOCVD). When the gallium nitride epitaxial layer is epitaxially grown, trimethyl gallium or triethyl gallium and ammonia gas are introduced into the reaction chamber by taking hydrogen or nitrogen as carrier gas, and the trimethyl gallium or triethyl gallium and ammonia gas are subjected to vapor phase epitaxy on the substrate in a thermal decomposition mode to form the gallium nitride epitaxial layer. Wherein the epitaxial growth temperature is 300-1600 ℃, and the growth pressure is 10-1000 mbar. Gallium nitride epitaxial layers may also be grown by Molecular Beam Epitaxy (MBE), Chemical Vapor Deposition (CVD), and Hydride Vapor Phase Epitaxy (HVPE).
Step S102, growing a barrier layer on the gallium nitride epitaxial layer.
Optionally, the barrier layer is an AlGaN barrier layer. The specific implementation manner of step S102 is: introducing a nitrogen source, a gallium source and an aluminum source into the reaction chamber through carrier gas; an AlGaN barrier layer is epitaxially grown on the gallium nitride epitaxial layer by metal organic chemical vapor deposition.
Further, the nitrogen source is ammonia gas, the gallium source is trimethyl gallium or triethyl gallium, and the aluminum source is trimethyl aluminum.
Further, the growth temperature of the AlGaN barrier layer is 400-1350 ℃.
Further, the carrier gas is hydrogen or nitrogen.
In an embodiment of the present invention, the barrier layer is an AlGaN barrier layer. An AlGaN barrier layer is grown on the gallium nitride epitaxial layer by MOCVD. When the AlGaN barrier layer is epitaxially grown, a nitrogen source ammonia gas, gallium source trimethyl gallium or triethyl gallium and aluminum source trimethyl aluminum are introduced into a reaction chamber by taking hydrogen or nitrogen as a carrier gas, and the nitrogen source, the gallium source and the aluminum source are subjected to vapor phase epitaxy on a substrate in a thermal decomposition mode to form the AlGaN barrier layer. Wherein the epitaxial growth temperature is 400 ℃ to 1350 ℃. AlGaN barrier layers can also be grown by MBE, CVD, and HVPE.
Step S103, depositing aluminum atoms on the barrier layer.
Optionally, the specific implementation manner of step S103 is: turning off a nitrogen source and a gallium source which are introduced into the reaction chamber, and introducing an aluminum source into the reaction chamber; wherein the aluminum source is trimethylaluminum; depositing aluminum atoms on the barrier layer.
Further, the deposition temperature of the aluminum atoms is 300 ℃ to 1600 ℃.
And step S104, exposing the gallium nitride epitaxial wafer in air so that the gallium nitride epitaxial wafer is oxidized in the air to form an oxide layer as a passivation layer.
Further, the specific implementation manner of step S104 is: closing the trimethylaluminum introduced into the reaction chamber, introducing hydrogen or nitrogen into the reaction chamber, and reducing the temperature of the reaction chamber to room temperature; and taking the gallium nitride epitaxial wafer out of the reaction chamber, so that the gallium nitride epitaxial wafer is exposed in the air and oxidized in the air to form an aluminum oxide passivation layer.
According to the embodiment of the invention, the passivation protective layer is grown on the gallium nitride epitaxial wafer, the surface state of the material can be improved, the current collapse phenomenon is effectively inhibited, and the aluminum oxide passivation protective layer is generated by natural oxidation in the air, so that no additional equipment is needed, and the preparation is simple.
Example two
Referring to fig. 2, fig. 2 is a graph illustrating a gallium nitride epitaxial wafer grown on a graphene substrate by an MOCVD method according to a second embodiment of the present invention, first, hydrogen is introduced into a reaction chamber, the temperature of the reaction chamber is raised to 1000 ℃ within a time period of 0s to 800s, the temperature is kept at 1000 ℃ within a time period of 800s to 1500s, and the substrate is baked at a high temperature to remove impurities on the surface of the substrate. And reducing the temperature of the reaction chamber to 580 ℃ in the time period of 1500s to 1800s, keeping the temperature at 580 ℃ unchanged in the time period of 1800s to 2000s, introducing a gallium source and a nitrogen source into the reaction chamber through a carrier gas, and growing a low-temperature GaN nucleating layer on the substrate. And in the time period of 2000s to 2500s, raising the temperature of the reaction chamber to 1000 ℃ again, in the time period of 2500s to 5000s, controlling the temperature of the reaction chamber to 1000 ℃, continuously introducing a nitrogen source and a gallium source into the reaction chamber through carrier gas, growing a high-temperature GaN epitaxial layer, then introducing the nitrogen source, the gallium source and an aluminum source into the reaction chamber through the carrier gas, and growing an AlGaN barrier layer on the GaN epitaxial layer. After a nitrogen source, a gallium source and an aluminum source are closed, reducing the temperature of the reaction chamber to 800 ℃ within a time period of 5000s to 5100s, keeping the temperature of the reaction chamber unchanged within the time period of 5100s to 5200s, introducing the aluminum source into the reaction chamber through a carrier gas, depositing an aluminum atom passivation layer, and then reducing the temperature of the reaction chamber.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (6)
1. A passivation method of a gallium nitride epitaxial wafer is characterized by comprising the following steps:
growing a gallium nitride epitaxial layer on a substrate;
growing a barrier layer on the gallium nitride epitaxial layer;
depositing aluminum atoms on the barrier layer;
exposing the gallium nitride epitaxial wafer in air so that the gallium nitride epitaxial wafer is oxidized in the air to form an oxide layer as a passivation layer;
wherein the barrier layer is an AlGaN barrier layer; the growth barrier layer on the gallium nitride epitaxial layer comprises:
introducing a nitrogen source, a gallium source and an aluminum source into the reaction chamber through carrier gas;
epitaxially growing an AlGaN barrier layer on the gallium nitride epitaxial layer by metal organic chemical vapor deposition;
wherein the depositing aluminum atoms on the barrier layer comprises:
turning off a nitrogen source and a gallium source which are introduced into the reaction chamber, and introducing an aluminum source into the reaction chamber through a carrier gas; wherein the aluminum source is trimethylaluminum;
depositing aluminum atoms on the AlGaN barrier layer by metal organic chemical vapor deposition; wherein the deposition temperature of the aluminum atoms is 300 ℃ to 1600 ℃, and the deposition time of the aluminum atoms is 100 seconds.
2. The method for passivating a gallium nitride epitaxial wafer according to claim 1, wherein growing a gallium nitride epitaxial layer on a substrate specifically comprises:
introducing a gallium source and a nitrogen source into the reaction chamber through carrier gas;
an epitaxial layer of gallium nitride is epitaxially grown on the substrate by chemical vapor deposition of a metal organic compound.
3. The method of passivating a gallium nitride epitaxial wafer as claimed in claim 1 or 2, wherein the gallium source is trimethyl gallium or triethyl gallium, the nitrogen source is ammonia gas, and the aluminum source is trimethyl aluminum.
4. The method of passivating a gallium nitride epitaxial wafer of claim 1, wherein the growth temperature of the AlGaN barrier layer is 400 ℃ to 1350 ℃.
5. A method of passivating a gallium nitride epitaxial wafer according to claim 2, wherein the carrier gas is hydrogen or nitrogen.
6. The method for passivating the gallium nitride epitaxial wafer according to claim 1, wherein the step of exposing the gallium nitride epitaxial wafer to air so that the gallium nitride epitaxial wafer is oxidized in the air to form an oxide layer as a passivation layer comprises the following steps:
closing the trimethylaluminum introduced into the reaction chamber, introducing hydrogen or nitrogen into the reaction chamber, and reducing the temperature of the reaction chamber to room temperature;
and taking the gallium nitride epitaxial wafer out of the reaction chamber, so that the gallium nitride epitaxial wafer is exposed in the air and oxidized in the air to form an aluminum oxide passivation layer.
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| EP1411148A1 (en) * | 2002-10-15 | 2004-04-21 | ALSTOM Technology Ltd | Method of depositing a MCrALY-coating on an article and the coated article |
| CN102820397A (en) * | 2011-06-09 | 2012-12-12 | Lg伊诺特有限公司 | Light emitting diode, light emitting device package including the same and lighting system |
| CN106486363A (en) * | 2015-09-01 | 2017-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Group III-nitride enhancement mode HEMT based on p-type layer and preparation method thereof |
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| JP2010177382A (en) * | 2009-01-28 | 2010-08-12 | Tokyo Electron Ltd | Film formation method, and plasma film formation apparatus |
| JP2016063167A (en) * | 2014-09-19 | 2016-04-25 | 株式会社東芝 | Semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP1411148A1 (en) * | 2002-10-15 | 2004-04-21 | ALSTOM Technology Ltd | Method of depositing a MCrALY-coating on an article and the coated article |
| CN102820397A (en) * | 2011-06-09 | 2012-12-12 | Lg伊诺特有限公司 | Light emitting diode, light emitting device package including the same and lighting system |
| CN106486363A (en) * | 2015-09-01 | 2017-03-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Group III-nitride enhancement mode HEMT based on p-type layer and preparation method thereof |
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