CN107570245B - A kind of self-loopa micro-fluidic chip and its preparation method and application - Google Patents

A kind of self-loopa micro-fluidic chip and its preparation method and application Download PDF

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CN107570245B
CN107570245B CN201710784242.8A CN201710784242A CN107570245B CN 107570245 B CN107570245 B CN 107570245B CN 201710784242 A CN201710784242 A CN 201710784242A CN 107570245 B CN107570245 B CN 107570245B
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layer
driven
electroosmosis
micro
liquid metal
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CN107570245A (en
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弥胜利
孙伟
李柏翰
李伟
杜志昌
王金杰
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Shenzhen International Graduate School of Tsinghua University
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Shenzhen Graduate School Tsinghua University
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Abstract

The invention discloses a kind of self-loopa micro-fluidic chips and its preparation method and application.The micro-fluidic chip includes top-down microfluidic layer, driven by electroosmosis layer and chip base layer, the driven by electroosmosis layer limits mutually independent fluidic channel and width/narrow electrode liquid metal flow passage with microfluidic layer and chip base layer respectively, it is perfused with solution and liquid metal to be driven respectively in fluidic channel and wide/narrow electrode liquid metal flow passage, wherein the driven by electroosmosis layer and wide/narrow electrode liquid metal flow passage are in interdigitated, and wide/narrow electrode liquid metal flow passage is completely covered in the lower surface of the driven by electroosmosis layer, the upper surface of driven by electroosmosis layer is exposed in fluidic channel, the both ends of wide/narrow electrode liquid metal flow passage pass through four metal electrodes respectively and are connected to power supply.Micro-fluidic chip of the invention has the advantages that small in size, integrated level is high, portable, stability is good, and also very simple is easy, preparation cost is low by preparation process, has a wide range of application.

Description

A kind of self-loopa micro-fluidic chip and its preparation method and application
Technical field
The invention belongs to microfluid conveying technology fields more particularly to a kind of self-loopa micro-fluidic chip and preparation method thereof And purposes.
Background technique
The features such as micro-fluidic chip sample volume as needed for it is small, detection efficiency is high, use cost is low is in biology Field is widely used.With developing to biological micro-fluidic chip to multifunctional integrated direction, especially to biology Cell realizes the demand of dynamic cultivation, so that micro-fluidic chip must have the chip of no external equipment pump valve from driving function. And existing transfer tube majority is all to need huge external equipment source, the convenient type that cannot achieve chip carries, and and equipment The installation in source is all complex.
What driving microfluid was commonplace at present is using mechanical Micropump, and driving force ratio is larger, and response speed compares It fastly, is the mainstream of micro-fluidic field application.But mechanical Micropump is difficult to be miniaturized because its structure is complicated, and its driving method There are problems that the Micro blazed-grating of check valve and dynamic sealing, movable part will appear abrasion due to being used for a long time, if material goes out The phenomenon that existing fatigue has more aggravated Micro blazed-grating, it is difficult to accurate conveying microlitre and microlitre or less rank fluid.And fluid Transport the problems such as will appear discontinuous, pulsation.
In view of the above problems, many enterprises and R&D institution start to turn to research non-mechanical Micropump, i.e., how by non-machine Tool can be changed into the kinetic energy of microfluid.Based on such idea, external many researchers start theoretical using electroosmotic flow To make the stable electroosmotic pump of performance.Electroosmotic pump overcomes a series of disadvantages of mechanical Micropump well, and by changing electricity Pressure and frequency can realize integrated pump valve with the flow of accurate control of fluid.By largely investigating, industrialization on the market at present Electroosmotic pump is less, and the direct current electroosmotic pump of early stage be since its operating voltage height, when work can generate a large amount of Joule heat, and solution exists A large amount of bubble can also be generated to electrode surface, while with solution cell reaction can occur for metal material manufacture electrode, cause electricity The consumption of pole and the denaturation of solution, this all causes a series of problem to the safety of the integrated of micro-fluidic chip and pump.
Summary of the invention
It is a kind of by exchanging the realization of electric osmose driving principle certainly present invention is primarily intended to overcome the deficiencies of the prior art and provide Micro-fluidic chip of circulation and its preparation method and application, the micro-fluidic chip have that small in size, portable, stability is good, integrated The advantages that spending height, sound construction, simple and easy manufacture craft.
In order to achieve the above object, present invention employs following technical solutions:
A kind of self-loopa micro-fluidic chip, including top-down microfluidic layer, driven by electroosmosis layer and chip base layer, The driven by electroosmosis layer limits mutually independent fluidic channel and width/narrow electrode with microfluidic layer and chip base layer respectively Liquid metal runner is perfused with solution to be driven and liquid in fluidic channel and wide/narrow electrode liquid metal flow passage respectively Metal, wherein the driven by electroosmosis layer and wide/narrow electrode liquid metal flow passage are in interdigitated, and under the driven by electroosmosis layer Wide/narrow electrode liquid metal flow passage is completely covered in surface, and the upper surface of driven by electroosmosis layer is exposed in fluidic channel, wide/narrow The both ends of electrode liquid metal flow passage pass through four metal electrodes respectively and are connected to power supply.Liquid in wide electrode liquid metal flow passage Liquid metal in state metal and narrow electrode liquid metal flow passage polarizes the driven by electroosmosis layer for making its surface, thus make with The solution of driven by electroosmosis layer contact generates induced charge, the charge formation electric double layer of the induced charge and driven by electroosmosis layer.? Under the action of external electrical field, effect of the induced charge layer by Coulomb force, make charge occur displacement, thus drag solution to Fixed-direction is mobile, electroosmotic flow is formed, to constitute dynamic self-loopa microfluidic system.
As the improved technical solution of the present invention, the driven by electroosmosis layer is mainly combined by PDMS and carbon material.It adopts It is compound with carbon material with PDMS, not only driven by electroosmosis layer can be made to have electric conductivity, but also enable driven by electroosmosis layer preferably with it is micro- Fluid layer and the bonding of chip base layer.
Further, the carbon material includes one of graphene, carbon nanotube, porous carbon, carbon fiber or a variety of.
Preferably, the dosage of the carbon material is 2%wt~40%wt of PDMS dosage.When carbon material is very few, PDMS It is poor with the compound rear electric conductivity of carbon material;When carbon material is excessive, the overall structure of PDMS and carbon material after compound is fragile, easily collapses It splits, be not easy secondary operation;And when the limited proportion of carbon material and PDMS are in the range, in solution close to driven by electroosmosis layer side It is not likely to produce bubble.
It is described to be covered with carbon close to the side of fluidic channel in driven by electroosmosis layer as the improved technical solution of the present invention Material.The carbon material has higher specific surface area, can increase charge storage capacity, to increase driven by electroosmosis efficiency.
Preferably, the carbon material with a thickness of 1~5 μm.
As the improved technical solution of the present invention, the width of the driven by electroosmosis layer of the wide electrode district is 10~200 μm, institute The width for stating the driven by electroosmosis layer of narrow electrode district is 5~50 μm, the driven by electroosmosis of a pair of of interdigitated wide electrode district and narrow electrode district The spacing of layer is 5~50 μm, and the spacing of two adjacent electrode pairs is 10~50 μm.
As the improved technical solution of the present invention, the liquid metal runner uses back-shaped interdigital runner or/and single fork Refer to runner.
Preferably, the width of the wide electrode liquid metal flow passage is 5~80 μm, the narrow electrode liquid metal flow passage Width is 1~20 μm.
As the improved technical solution of the present invention, the fluidic channel includes cell culture insert, in cell culture insert It is provided with columnar arrays.
Preferably, the microtrabeculae gap of the columnar arrays is 3~13 μm.
Further, the fluidic channel is designed to annular enclosed type, and it is outstanding that cell culture insert two sides are provided with cell Liquid pours into hole.
In order to prepare the self-loopa micro-fluidic chip of above structure, present invention employs following methods: (1) utilizing PDMS system Standby microfluidic layer and chip base layer, (2) are combined with each other using PDMS and carbon and prepare driven by electroosmosis layer, (3) by microfluidic layer, Driven by electroosmosis layer and chip base layer are bonded together according to sequence from top to down, and (4) are in wide/narrow electrode liquid metal flow passage Both ends produce four liquid metals and pour into hole, and microfluid is produced in fluidic channel and pours into hole, and (5) are by liquid metal and miniflow Body pours into liquid metal runner and fluidic channel, and four metal electrodes insertion liquid metals are poured into hole by (6), then with electricity Source connection.
As the improved technical solution of the present invention, driven by electroosmosis layer of the invention is made with the following method: using PDMS, Curing agent and carbon material mix after-pouring on the silicon wafer with interdigital pattern, face corresponding with silicon wafer are struck off, so Curing molding afterwards recycles the unwanted region of laser incising eating away, and driven by electroosmosis layer, the top view of the driven by electroosmosis layer is made For wide electrode district and the mutually independent interdigitated knot of narrow electrode district.
Alternatively, the driven by electroosmosis layer is made with the following method: it is wide/narrow to prepare band interdigitated first with PDMS Then after mixing by PDMS, curing agent and carbon material the chip base of electrode liquid metal flow passage is packed into squash type 3D and beats In print machine, 3D printer spray head is allowed to scan along wide electrode liquid metal flow passage and narrow electrode liquid metal flow passage top, so that The upper surface of liquid metal runner is completely covered in mixture, and driven by electroosmosis layer is made in curing molding.
Preferably, the dosage of the carbon material is 2~40%wt of PDMS dosage, and the curing agent is the 5 of PDMS dosage ~20%wt.
As the improved technical solution of the present invention, before curing molding, one layer first is covered on uncured mixture surface Carbon material.
The present invention also provides the purposes of above-mentioned self-loopa micro-fluidic chip, be mainly used for cell culture under dynamic environment, The In vivo models such as cell detection, the flowing of cell screening or simulation blood in the blood vessels.When for cell in micro-fluidic chip Dynamic environment under culture when, may be implemented flow velocity, flow direction it is electrodeless adjustable, cell is observed in the liquid of flowing Growth conditions.
Compared with prior art, the present invention has following technical effect:
1. the present invention makes electrodeless adjustable electroosmotic pump using driven by electroosmosis theory, electroosmotic flow moves pulse free during driving Phenomenon, fluid motion are continuous.Size, frequency and switching voltage direction by adjusting input voltage can change driving liquid Flow and flow direction, whole device do not have moving component, and without wear phenomenon, stability is good.Alternating current is relative to straight simultaneously The driving of very little voltage may be implemented in galvanic electricity, will not generate a large amount of Joule heat, smaller to impact cell.
2. inner conductive electrode is irrigated using liquid metal or using vacuum present invention employs interdigitated electrode structure The method for sucking metal liquid, production method is simple, and very subtle wire arrangements may be implemented.
3. the present invention combines micro-nano processing technology with 3D printing technique, make the micro-structure of some high-aspect-ratios can be with It is transferred on microstructure by way of directly squeezing, it is more molding scarce to avoid micro-nano processing high aspect ratio structure It falls into.
4. driven by electroosmosis layer is compound using PDMS and carbon material so that PDMS has certain electric conductivity, and be easier to and The microfluidic layer and chip base layer of PDMS preparation are bonded together securely.As one layer of carbon material of its surface adhesion, Ke Yigeng Electric double layer is formed with solution well, more charges, the delivery efficiency of elevator pump, and the device is stored and is not easy to occur instead with solution Answer, will not sacrificial electrode material, the component of solution will not be changed.
5. driven by electroosmosis area is separated from each other with cell culture zone position, electric current will not reduce electric current to cell by cell Influence.
Detailed description of the invention
Fig. 1 is the overall structure figure of micro-fluidic chip;
Fig. 2 is the Structure explosion diagram of micro-fluidic chip;
The schematic diagram of Fig. 3 laser ablation driven by electroosmosis layer;
Fig. 4 is the schematic diagram of 3D printing driven by electroosmosis layer;
Fig. 5 is the perspective view of self-loopa micro-fluidic chip working region.
Specific embodiment
In order to make it will be apparent to those skilled in that legibly understand the present invention, now in conjunction with specific embodiment and attached drawing, It describes in detail to the present invention.
Explanation of nouns: driven by electroosmosis layer 2 is the conduction material for referring to make the solution in fluidic channel that induced charge occurs The bed of material.It can be PDMS- carbon composite, and the material that can also have electric conductivity by some other is made, such as super Positive/negative material, the PDMS-Ag composite material used in capacitor.
Liquid metal runner includes wide electrode liquid metal flow passage 203 and narrow electrode liquid metal flow passage 204.Wide/narrow electricity Pole liquid metal runner (203/204) is finger beam electrode solution state metal flow passage 203 or/and narrow electrode liquid metal flow passage 204 Referred to as.
Wide electrode liquid metal flow passage 203 region corresponding with driven by electroosmosis layer 2 is wide electrode district, narrow electrode liquid metal For the region corresponding with driven by electroosmosis layer 2 of runner 204 narrow electrode district, wide/narrow electrode district is finger beam electrode district or/and narrow electrode district Abbreviation.PDMS- carbon composite 208 refers to the material being combined with each other by PDMS and carbon, can be physical blending, can also be with It is to be made using carbon material chemical modification PDMS to make PDMS generate electric conductivity.
PDMS: dimethyl silicone polymer (polydimethylsiloxane)
Embodiment 1
As depicted in figs. 1 and 2, self-loopa micro-fluidic chip of the invention includes top-down microfluidic layer 1, electric osmose drive Dynamic layer 2 and chip base layer 3.The driven by electroosmosis layer 2 is limited with microfluidic layer 1 and chip base layer 3 mutually solely respectively Vertical fluidic channel and wide/narrow electrode liquid metal flow passage (203/204).In fluidic channel and wide/narrow electrode liquid gold Belong in runner (203/204) and is perfused with solution and liquid metal to be driven respectively.Wherein the driven by electroosmosis layer 2 and wide/narrow electricity Pole liquid metal runner (203/204) is in interdigitated, and wide/narrow electrode is completely covered in the lower surface of the driven by electroosmosis layer 2 Liquid metal runner (203/204), the upper surface of driven by electroosmosis layer 2 are exposed in fluidic channel.In wide/narrow electrode liquid gold The both ends for belonging to runner (203/204) pass through four metal electrodes 4 respectively and are connected to 6 output port of AC power source.AC power source 6 Frequency range is in 10-40kHz, and voltage range is in 5-100Vpp.Preferably, AC power source 6 can collect thereon using pcb board as bottom plate Miniature conversion module is exchanged at there is direct current to become, is assembled with micro-fluidic chip basal layer 3, is supplied by miniature lithium ion battery Electric (not shown).
Wherein, the width of the driven by electroosmosis layer 2 of the wide electrode district 205 is 10~200 μm, the narrow electrode district 206 The width of driven by electroosmosis layer 2 is 5~50 μm, the driven by electroosmosis layer 2 of the wide electrode district 205 of a pair of of interdigitated and narrow electrode district 206 Spacing is 5~50 μm, and the spacing of two adjacent electrode pairs (205/206) is 10~50 μm.The liquid metal runner (203/ 204) back-shaped interdigital runner or/and single interdigital runner are used.The width of the wide electrode liquid metal flow passage 203 is 5~80 μ M, the width of the narrow electrode liquid metal flow passage 204 are 1~20 μm.
When micro-fluidic chip of the invention is used for cell dynamic cultivation, fluidic channel can be designed to ring seal Formula is provided with cell culture insert 101 in fluidic channel, and the dykes and dams of columnar arrays composition are provided in cell culture insert 101 103, the microtrabeculae gap of columnar arrays is 3~13 μm.101 two sides of cell culture insert are provided with cell suspension and pour into area 102.It will Cell suspension pours into fluidic channel by pouring into area 102, then the positive and negative anodes of power supply 6 are led to respectively on metal electrode 4, adjusts Voltage and frequency, liquid start to drive, and cell suspension starts to move along some direction, when cell passes through cell culture insert When 101, cell is cultured the interception of the dykes and dams 103 in pond 101, and cell is built up on 103 surface of dykes and dams, and culture solution can then pass through dike It is moved in the gap on dam 103.Cell carries out adherent growth in cell culture insert 101 as a result,.Continued power can make at cell In the state of dynamic cultivation.
Embodiment 2
The preparation process of microfluidic layer 1 is as follows: PMDS colloid 20g being mixed with curing agent 2g, in planet batch mixer Then the PDMS liquid glue mixed is put into vacuum drying ware and carries out vacuumizing 10min, by what is made by middle rotation 1min Figuratum silicon wafer is first put into the culture dish for being covered with aluminium-foil paper, and it is horizontal to guarantee that silicon wafer is placed.One is placed into later is protected from light glass It in ware, instills trim,ethylchlorosilane solution 2 and drips, taken out after stifling 2min.Prepared PDMS liquid state colloid has been cast in On the silicon wafer of figure, places into vacuum drying ware and vacuumize 10min, be put into after taking-up in 85 DEG C of baking ovens and toast 30min.It takes out PDMS after solidification is cut according to the sideline of pattern, and the planar dimension of microfluidic layer 1 is 5cm × 2cm, with punch in phase Wide electrode liquid metal flow passage 203, narrow electrode liquid metal flow passage 204 and the microfluid answered pour into area 102 and punch diameter respectively For the through-hole of 1mm.
The preparation process of driven by electroosmosis layer 2 is as follows: PDMS colloid 20g and chloroform 100ml being dissolved each other, 10min is stirred. Functionalized multi-wall carbonnanotubes powder 1.8g is mixed with porous carbon dust 1g, 10min is ground in mortar, is poured into chlorine In imitative 100ml.Ultrasonic agitation 1h is carried out in 40kHz supersonic cleaning machine.The PDMS/ prepared after taking-up by the solution and before Chloroformic solution is mixed, and 40kHz supersonic cleaning machine ultrasonic agitation 2h is put into.After taking-up, toasted in 80 DEG C of heating plates 8h, until solvent forms colloidal state.Prepared solution is put into 60 DEG C of vacuum drying oven baking 2h again.The slurry is coated It on aluminium foil, with doctor blade, is put into three-roll grinder and is rolled, scrape material from aluminium-foil paper again after rolling is good Get off to be put into reagent bottle.2g curing agent solution is added in slurry, 1min is rotated in planet batch mixer, by the mixed solution It is put into vacuum drying ware and carries out vacuumize process, taken out after 10min.The silicon wafer with interdigitated pattern made first is put into paving There is the culture dish of aluminium-foil paper, it is horizontal to guarantee that silicon wafer is placed.One is placed into later to be protected from light in glass dish, instills trimethylchloro-silicane Alkane solution 2 drips, and takes out after stifling 2min.Prepared mixed solution is coated on silicon wafer, upper surface is struck off with scraper Processing.It is put into 85 DEG C of baking ovens and toasts 30min, solidify PDMS.Semi-finished product after the completion of solidification are close to the side tool of silicon wafer Standby wide/narrow electrode irrigation canals and ditches of interdigitated, after the chip base of the semi-finished product and plane is bonded together, may make up interdigitated it is wide/ Narrow electrode liquid metal flow passage (203/204).Above-mentioned semi-finished product are cut by laser, unwanted part is removed, so that half Finished product is divided into width/narrow electrode district (205/206) of mutually independent driven by electroosmosis layer 2, as shown in Figure 3.The driven by electroosmosis Width/narrow electrode district (205/206) of layer 2 is viewed from above, it can be seen that clearly interdigitated configuration.It is carried out on interdigital structure Getting through aperture in 4 corresponding positions that liquid metal pours into region 207 is 1mm hole.
The preparation process of chip base layer 3 is as follows: making one using the preparation process of microfluidic layer 1 using PDMS colloid The rectangle frame 301 that driven by electroosmosis layer 2 be able to be accommodated, is then bonded together with glass, constitutes chip base layer 3.Or it uses PDMS colloid produces the rectangular channel that be able to accommodate driven by electroosmosis layer 2 using the preparation process of microfluidic layer 1, directly as Chip base layer 3.
Assembling: being put into plasma cleaner for chip base layer 3, driven by electroosmosis layer 2 and microfluidic layer 1, be passed through oxygen, etc. Ion Cleaning 20s.2 lower part of driven by electroosmosis layer and 3 top of chip base layer are fitted together after taking-up, by microfluidic layer 1 Lower part is bonded with 2 top of driven by electroosmosis layer, and hole is aligned.85 DEG C of baking oven baking 30min, bonding are put into after posting It finishes.
Liquid filling: being 1mm by outer diameter, and the 4 hollow core metal electrodes 4 of internal diameter 0.5mm made by silvery are made before being inserted into 4 through-holes on the microfluidic layer 1 performed, are inserted into bottom, and gallium is heated to 40 DEG C, are passed through gold with the syringe for connecing sebific duct Belong to electrode 4, makes in its runner full of interdigital electrode area.Wherein, using dispenser by silicon rubber to 1 top of microfluidic layer and gold Belong to 4 contact site of electrode to be sealed.The metal reperfusion mode of driven by electroosmosis layer 2, if using non-back-shaped interdigital runner design, It needs to be put into chip in vacuum plastic envelope, then vacuumize process, the absolute pressure of vacuum here is carried out by vacuum plastic sealing machine Range is between 0.1-0.5MPa.Vacuum standing dismantles plastic packaging bag afterwards for 24 hours, and liquid metal is poured into hollow metal electrode 4 It is interior.Due to PDMS breathing characteristics, in material internal there are certain negative pressure, metal liquid can be full of entire driven by electroosmosis workspace Interdigital runner in.
Use: wide/narrow electrode liquid metallic tines in the chip base layer 3 refer to that structure passes through metal electrode 4 respectively and connects Two ports that indirect current source 6 exports.The frequency range of AC power source 6 is in 20kHz, and voltage range is in 50Vpp.Microfluid Flow velocity is 0.3 μm/s, and bubble-free generates after continuous energization 1 day, and electrode does not have to react with solution.
Embodiment 3
Embodiment 3 is substantially the same manner as Example 2, the difference is that the preparation process of driven by electroosmosis layer 2, specific as follows:
PDMS colloid 20g and chloroform 100ml are dissolved each other, 10min is stirred.By functionalized multi-wall carbonnanotubes powder 1.8g is mixed with porous carbon dust 1g, and 10min is ground in mortar, is poured into chloroform 100ml.In 40kHz ultrasound Ultrasonic agitation 1h is carried out in cleaning machine.The solution is mixed with the PDMS/ chloroformic solution prepared before after taking-up, is put into 2h is stirred by ultrasonic in 40kHz supersonic cleaning machine.After taking-up, baking 8h is carried out in 80 DEG C of heating plates, until solvent forms colloidal State.Prepared solution is put into 60 DEG C of vacuum drying oven baking 2h again.The slurry is coated on aluminium foil, is scraped with scraper It is flat, it is put into three-roll grinder and is rolled, be put into material in reagent bottle from scraping off on aluminium-foil paper again after rolling is good.? 2g curing agent solution is added in slurry, rotates 1min in planet batch mixer, which is put into vacuum drying ware and is carried out Vacuumize process is taken out after 10min.The silicon wafer with interdigitated pattern made first is put into the culture dish for being covered with aluminium-foil paper, It is horizontal to guarantee that silicon wafer is placed.One is placed into later to be protected from light in glass dish, is instilled trim,ethylchlorosilane solution 2 and is dripped, fumigates It is taken out after 2min.Prepared mixed solution is coated on silicon wafer, upper surface is carried out with scraper to strike off processing, then table on it Face cover one layer of carbon fiber, carbon fiber with a thickness of control at 5 μm, be subsequently placed into 85 DEG C of baking ovens and toast 30min, consolidate PDMS Change.Semi-finished product after the completion of solidification, the side for being close to silicon wafer have wide/narrow electrode irrigation canals and ditches of interdigitated, when the semi-finished product and put down After the chip base in face is bonded together, wide/narrow electrode liquid metal flow passage (203/204) of interdigitated may make up.By above-mentioned half Finished product is cut by laser, and unwanted part is removed so that semi-finished product be divided into the width of mutually independent driven by electroosmosis layer 2/ Narrow electrode district (205/206).The width of the driven by electroosmosis layer 2/narrow electrode district (205/206) is viewed from above, it can be seen that clear Clear interdigitated configuration.It carries out getting through aperture in 4 corresponding positions that liquid metal pours into region 207 and being on interdigital structure 1mm hole.
Use: wide/narrow electrode liquid metallic tines in the chip base layer 3 refer to that structure passes through metal electrode 4 respectively and connects Two ports that indirect current source 6 exports.The frequency range of AC power source 6 is in 20kHz, and voltage range is in 50Vpp.Microfluid Flow velocity is 0.5 μm/s, and bubble-free generates after continuous energization 1 day.
Embodiment 4
The preparation process of microfluidic layer 1 is the same as embodiment 2.
The preparation of chip base layer 3: PDMS colloid 10g is mixed with curing agent 1g, is rotated in planet batch mixer Then PDMS liquid glue is put into vacuum drying ware and carries out vacuumizing 10min by 1min, the interdigitated pattern that has that will be made Silicon wafer is first put into the culture dish for being covered with aluminium-foil paper, and it is horizontal to guarantee that silicon wafer is placed.One is placed into later to be protected from light in glass dish, is dripped Enter the drop of trim,ethylchlorosilane solution 2, is taken out after stifling 2min, obtain the good silicon wafer of photoetching.PDMS is poured on the good silicon wafer of photoetching On, it is put into baking oven baking 30min.It is cut after taking-up, obtains the chip base layer 3 with wide/narrow electrode irrigation canals and ditches of interdigitated.Its Outside Dimensions are 5cm × 2cm.
The preparation process of driven by electroosmosis layer 2: PDMS colloid, conductive black, curing agent is taken to carry out according to the ratio of 10:4:1 Mixing, is put into planet batch mixer and is mixed, slurry after mixing pours into squash type 3D printer.3D printer spray Head is scanned along the top of wide electrode liquid metal flow passage and narrow electrode liquid metal flow passage, and scanning speed is set in 0.5mm/s, squeeze pressure 500psi, slurry are covered on wide electrode liquid metal flow passage and narrow electrode liquid metal flow passage Portion forms closed channel with three faces of wide/narrow electrode irrigation canals and ditches of runner interdigitated of chip base layer 3, as shown in Figure IV.Wide electricity A height of 8 layers of layer of polar region printing, with a thickness of 300 μm, a height of 16 layers of the layer of narrow electrode district, with a thickness of 60 μm.After PDMS solidification, Driven by electroosmosis layer 2 makes and finishes.It carries out getting through in 4 corresponding positions that liquid metal pours into region 207 on interdigital structure Aperture is 1mm hole.
Assembling: the assembly for having been incorporated into chip base layer 3 together, driven by electroosmosis layer 2 and microfluidic layer 1 are put into Ion Cleaning machine is passed through oxygen, plasma cleaning 20s.After taking-up by the lower part of microfluidic layer 1 and 2 top of driven by electroosmosis layer into Row fitting, hole is aligned.85 DEG C of baking oven baking 30min are put into after posting, bonding finishes.
Liquid filling is the same as embodiment 2.
Use: wide/narrow electrode liquid metallic tines in the chip base layer 3 refer to that structure passes through metal electrode 4 respectively and connects Two ports that indirect current source 6 exports.The frequency range of AC power source 6 is in 20kHz, and voltage range is in 50Vpp.Microfluid Flow velocity is 0.35 μm/s, and bubble-free generates after continuous energization 1 day, and electrode does not react with solution.
Embodiment 5
The present embodiment is with embodiment 4 the difference is that the preparation process of driven by electroosmosis layer 2:
Take PDMS colloid, conductive black, curing agent to be mixed according to 10:2:0.5 ratio, be put into planet batch mixer into Row mixing, slurry after mixing pour into squash type 3D printer.3D printer spray head is along wide electrode flow of liquid metal The top of road and narrow electrode liquid metal flow passage is scanned, and scanning speed is set in 0.5mm/s, and squeeze pressure is 500psi, slurry are covered on wide electrode liquid metal flow passage and narrow electrode liquid metal flow passage top, the stream with chip base layer 3 Three faces of wide/narrow electrode irrigation canals and ditches of road interdigitated form closed channel.A height of 8 layers of layer of wide electrode district printing, with a thickness of 300 μ M, a height of 16 layers of the layer of narrow electrode district, with a thickness of 60 μm.Graphene conversion is carried out on Kapton with laser, with the figure Sample is affixed on printed slurry, is attached to the Graphene powder of one layer of 5 μ m-thick on printed wide/narrow electrode district in this way End.After PDMS solidification, driven by electroosmosis layer 2 makes and finishes.It carries out pouring into region 207 in liquid metal on interdigital structure It is 1mm hole that 4 corresponding positions, which get through aperture,.
Use: wide/narrow electrode liquid metallic tines in the chip base layer 3 refer to that structure passes through metal electrode 4 respectively and connects Two ports that indirect current source 6 exports.The frequency range of AC power source 6 is in 10kHz, and voltage range is in 5Vpp.Microfluid Flow velocity is 0.5 μm/s, and bubble-free generates after continuous energization 1 day, and electrode does not react with solution.
Embodiment 6
The present embodiment is with embodiment 4 the difference is that the preparation process of driven by electroosmosis layer 2:
It takes PDMS colloid, porous carbon, curing agent to be mixed according to 10:2:2 ratio, is put into planet batch mixer and is mixed It closes, slurry after mixing pours into squash type 3D printer.3D printer spray head along wide electrode liquid metal flow passage with And the top of narrow electrode liquid metal flow passage is scanned, scanning speed is set in 0.5mm/s, squeeze pressure 500psi, slurry Material is covered on wide electrode liquid metal flow passage and narrow electrode liquid metal flow passage top, the runner interdigitated with chip base layer 3 Three faces of wide/narrow electrode irrigation canals and ditches form closed channel.A height of 8 layers of layer of wide electrode district printing, with a thickness of 300 μm, narrow electrode A height of 16 floor of the floor in area, with a thickness of 60 μm.Graphene conversion is carried out on Kapton with laser, is affixed on the pattern On printed slurry, the graphene powder of one layer of 1 μ m-thick is attached on printed wide/narrow electrode district in this way.To After PDMS solidification, driven by electroosmosis layer 2 makes and finishes.Carried out on interdigital structure liquid metal pour into 4 of region 207 it is right Answering position to get through aperture is 1mm hole.
Use: wide/narrow electrode liquid metallic tines in the chip base layer 3 refer to that structure passes through metal electrode 4 respectively and connects Two ports that indirect current source 6 exports.The frequency range of AC power source 6 is in 40kHz, and voltage range is in 100Vpp.Microfluid Flow velocity be 0.38 μm/s, it is continuous be powered 1 day after bubble-free generate, electrode does not react with solution.
Obviously, above-described embodiment is just for the sake of clearly demonstrating example, rather than the limitation to embodiment.It is right For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or It changes.There is no necessity and possibility to exhaust all the enbodiments.As long as being made on the basis of the embodiment of the present invention The change scheme of common-sense, among protection scope of the present invention.

Claims (12)

1. a kind of self-loopa micro-fluidic chip, including top-down microfluidic layer, driven by electroosmosis layer and chip base layer, institute It states driven by electroosmosis layer and limits mutually independent fluidic channel and width/narrow electrode solution with microfluidic layer and chip base layer respectively State metal flow passage is perfused with solution to be driven and liquid gold in fluidic channel and wide/narrow electrode liquid metal flow passage respectively Belong to, wherein the driven by electroosmosis layer and wide/narrow electrode liquid metal flow passage are in interdigitated, and the following table of the driven by electroosmosis layer Wide/narrow electrode liquid metal flow passage is completely covered in face, and the upper surface of driven by electroosmosis layer is exposed in fluidic channel, wide/narrow electricity The both ends of pole liquid metal runner pass through four metal electrodes respectively and are connected to power supply.
2. self-loopa micro-fluidic chip according to claim 1, it is characterised in that: the driven by electroosmosis layer is mainly by PDMS It is combined with carbon material.
3. self-loopa micro-fluidic chip according to claim 2, it is characterised in that: the carbon material includes graphene, carbon One of nanotube, porous carbon, carbon fiber are a variety of.
4. self-loopa micro-fluidic chip according to claim 2, it is characterised in that: the dosage of the carbon material is PDMS use 2~40%wt of amount.
5. self-loopa micro-fluidic chip according to claim 1, it is characterised in that: in driven by electroosmosis layer close to microfluid stream The side in road is covered with carbon material.
6. self-loopa micro-fluidic chip according to claim 1, it is characterised in that: the liquid metal runner is using back-shaped Interdigital runner or/and single interdigital runner.
7. self-loopa micro-fluidic chip according to claim 1, it is characterised in that: the width electrode liquid metal flow passage Width is 5~80 μm, and the width of the narrow electrode liquid metal flow passage is 1~20 μm.
8. self-loopa micro-fluidic chip according to claim 1, it is characterised in that: the fluidic channel includes cell training Pond is supported, columnar arrays are provided in cell culture insert.
9. self-loopa micro-fluidic chip according to claim 8, it is characterised in that: the microtrabeculae gap of the columnar arrays is 3~13 μm.
10. self-loopa micro-fluidic chip according to claim 8, it is characterised in that: the fluidic channel design cyclization Shape closed formula is provided with cell suspension in cell culture insert two sides and pours into hole.
11. including the following steps: (1) benefit such as the preparation method of the described in any item self-loopa micro-fluidic chips of claim 2-4 Microfluidic layer and chip base layer are prepared with PDMS, (2) are combined with each other using PDMS and carbon and prepare driven by electroosmosis layer, and (3) will Microfluidic layer, driven by electroosmosis layer and chip base layer are bonded together according to sequence from top to down, and (4) are in wide/narrow electrode solution State metal flow passage both ends produce four liquid metals and pour into hole, and microfluid is produced in fluidic channel and pours into hole, and (5) are by liquid Metal and microfluid pour into liquid metal runner and fluidic channel, and (6) pour into four metal electrode insertion liquid metals Then hole is connected to power supply.
12. such as the purposes of the described in any item self-loopa micro-fluidic chips of claim 1-10, it is characterised in that: be used for dynamic ring The flowing of cell culture, cell detection, cell screening or simulation blood in the blood vessels under border.
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