CN107565920B - Transimpedance amplifier suitable for wearable PPG signal detection - Google Patents

Transimpedance amplifier suitable for wearable PPG signal detection Download PDF

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CN107565920B
CN107565920B CN201710717113.7A CN201710717113A CN107565920B CN 107565920 B CN107565920 B CN 107565920B CN 201710717113 A CN201710717113 A CN 201710717113A CN 107565920 B CN107565920 B CN 107565920B
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twenty
transimpedance amplifier
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CN107565920A (en
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郑朝霞
蒋潘婷
袁意辉
曾小刚
刘尹
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Huazhong University of Science and Technology
Ezhou Institute of Industrial Technology Huazhong University of Science and Technology
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Huazhong University of Science and Technology
Ezhou Institute of Industrial Technology Huazhong University of Science and Technology
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Abstract

The invention relates to a transimpedance amplifier suitable for wearable PPG signal detection, which comprises: the circuit comprises a main trans-impedance amplifier, an auxiliary trans-impedance amplifier and a comparator; the first output end of the auxiliary transimpedance amplifier is connected with the main transimpedance amplifier to provide bias voltage for the main transimpedance amplifier, the second output end of the auxiliary transimpedance amplifier is connected with the positive input end of the comparator to provide input reference voltage for the comparator, the negative input end of the comparator is connected with the output end of the main transimpedance amplifier, the output end of the comparator is connected with the main transimpedance amplifier, and the comparator is used for comparing the output voltage of the main transimpedance amplifier with the reference voltage provided by the auxiliary transimpedance amplifier and outputting a binary signal, so that the amplification factor of the main transimpedance amplifier is changed, and automatic gain control is achieved. The invention has the characteristics of low power consumption, small occupied area and the like on the premise of realizing basic functions.

Description

Transimpedance amplifier suitable for wearable PPG signal detection
Technical Field
The invention belongs to the technical field of analog integrated circuits, and particularly relates to a transimpedance amplifier suitable for wearable PPG signal detection.
Background
The photoplethysmography (PPG) is a technique that uses a photoelectric sensor to detect the difference in reflected light intensity after absorption by human blood and tissue and trace the change of blood vessel volume in the cardiac cycle. By detecting the PPG signal, the blood oxygen and the blood pressure of the human body can be measured in real time. The traditional PPG signal detection device has large power consumption and size, is only suitable for hospitals and is difficult to enter communities and even families. Based on this, wearable PPG signal detection device has better development value and application prospect.
Disclosure of Invention
In view of the above situation, an object of the present invention is to provide a transimpedance amplifier suitable for wearable PPG signal detection.
The technical scheme adopted by the invention is as follows: a transimpedance amplifier suitable for wearable PPG signal detection, comprising: the circuit comprises a main transimpedance amplifier, an auxiliary transimpedance amplifier and a comparator; the first output end of the auxiliary transimpedance amplifier is connected with the main transimpedance amplifier to provide bias voltage for the main transimpedance amplifier, the second output end of the auxiliary transimpedance amplifier is connected with the positive input end of the comparator to provide input reference voltage for the comparator, the negative input end of the comparator is connected with the output end of the main transimpedance amplifier, the output end of the comparator is connected with the main transimpedance amplifier, and the comparator is used for comparing the output voltage of the main transimpedance amplifier with the reference voltage provided by the auxiliary transimpedance amplifier and outputting a binary signal, so that the amplification factor of the main transimpedance amplifier is changed, and automatic gain control is achieved.
Through the technical scheme, compared with the prior art, the power consumption and the area of the trans-impedance amplifier are reduced through various modes. Therefore, the power consumption of the invention is only 270uW, and the area is only 7200um 2. The invention is an important link in the wearable PPG signal detection device, and has the characteristics of low power consumption, small occupied area and the like on the premise of realizing basic functions.
The invention has the following effects: the transimpedance amplifier applicable to wearable PPG signal detection provides a transimpedance amplifier circuit with low power consumption and small occupied area for wearable PPG signal detection.
Drawings
Fig. 1 is a schematic structural diagram of a transimpedance amplifier suitable for wearable PPG signal detection provided in the present invention;
FIG. 2 is a schematic diagram of the main transimpedance amplifier of FIG. 1;
FIG. 3 is a schematic diagram of the secondary transimpedance amplifier of FIG. 1;
fig. 4 is a schematic diagram of the comparator of fig. 1.
In the figure, 1 is a main trans-impedance amplifier, 2 is a secondary trans-impedance amplifier, and 3 is a comparator.
Detailed Description
The transimpedance amplifier suitable for wearable PPG signal detection provided by the present invention is described below with reference to the accompanying drawings:
referring to fig. 1, a transimpedance amplifier suitable for wearable PPG signal detection provided in the present invention includes: the circuit comprises a main transimpedance amplifier 1, an auxiliary transimpedance amplifier 2 and a comparator 3; the first output end of the auxiliary transimpedance amplifier 2 is connected with the main transimpedance amplifier 1 to provide a bias voltage Vb1 for the main transimpedance amplifier 1, the second output end of the auxiliary transimpedance amplifier 2 is connected with the positive input end of the comparator 3 to provide an input reference voltage Vb2 for the comparator 3, the negative input end of the comparator 3 is connected with the output end of the main transimpedance amplifier 1, and the output end of the comparator 3 is connected with the main transimpedance amplifier 1. The comparator is used for comparing the output voltage of the main transimpedance amplifier with the reference voltage provided by the auxiliary transimpedance amplifier and outputting a binary signal Vc. And further, the amplification factor of the main transimpedance amplifier is changed to realize automatic gain control.
Referring to fig. 2, the main transimpedance amplifier 1 according to the embodiment of the present invention includes: the driving circuit comprises a first transistor M1, a second transistor M2, a third transistor M3, a fourth transistor M4, a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a ninth transistor M9, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a first capacitor C1 and a main power supply VDD 1. The drain of the first transistor M1 is connected with one end of the first resistor R1 and then connected with the gate of the fifth transistor, one end of the fourth resistor R4 and one end of the fifth resistor R5, the gate of the first transistor M1 is connected with the drain of the second transistor M2 and then connected with the drain of the third transistor M3, and the source of the first transistor M1 is connected with one end of the second resistor R2; the source of the second transistor M2 is connected with the main power supply VDD1, and the gate of the second transistor M2 is grounded; the gate of the third transistor M3 is connected to the main power supply VDD1, and the source of the third transistor M3 is connected to the drain of the fourth transistor M4 and then connected to the gate of the sixth transistor M6; the gate of the fourth transistor M4 is connected to the secondary transimpedance amplifier 2 and receives the bias voltage Vb1 provided by the same, and the source of the fourth transistor M4 is grounded; the drain of the fifth transistor M5 is connected to the main power supply VDD1, and the source of the fifth transistor M5 is connected to the drain of the sixth transistor M6 and then connected to the gate of the eighth transistor M8; the source of the sixth transistor M6 is grounded; the source of the seventh transistor M7 is connected to the main power supply VDD1, the gate of the seventh transistor M7 is grounded, and the drain of the seventh transistor M7 is connected to the drain of the eighth transistor M8 and then connected to one end of the third resistor R3, the other end of the fourth transistor R4, and the drain of the ninth transistor M9; the source of the eighth transistor M8 is grounded; the source of the ninth transistor M9 is connected to the other end of the fifth resistor R5, and the gate of the ninth transistor M9 is connected to the comparator 3 and receives Vc supplied therefrom; the other end of the first resistor R1 is connected with a main span power supply VDD 1; the other end of the second resistor R2 is grounded; the other end of the third resistor R3 is connected with the first capacitor C1; the other end of the first capacitor C1 is grounded; the source of the first transistor M1 is connected to the current input terminal Iin, and the other end of the third resistor R3 is connected to the voltage output terminal Vout.
Referring to fig. 3, the sub-transimpedance amplifier 2 according to the embodiment of the present invention employs an improved RGC input structure, which includes: a tenth transistor M10, an eleventh transistor M11, a twelfth transistor M12, a thirteenth transistor M13, a sixth resistor R6, a seventh resistor R7, and a sub-cross power supply VDD 2. A drain of the tenth transistor M10 is connected to one end of the sixth resistor R6, a gate of the tenth transistor M10 is connected to a drain of the eleventh transistor M11 and then connected to a drain of the twelfth transistor M12, and a source of the tenth transistor M10 is connected to one end of the seventh resistor R7 and then connected to a gate of the thirteenth transistor M13; the source of the eleventh transistor M11 is connected to the sub-cross power supply VDD2, and the gate of the eleventh transistor M11 is grounded; a gate of the twelfth transistor M12 is connected to the sub-cross power supply VDD2, and a source of the twelfth transistor M12 is connected to a drain of the thirteenth transistor M13; the source of the thirteenth transistor M13 is grounded; the other end of the sixth resistor R6 is connected with the secondary cross power supply VDD 2; the other end of the seventh resistor R7 is grounded; the gate of the thirteenth transistor M13 is connected to the main transimpedance amplifier 1 and supplies it with the bias voltage Vb1, and the drain of the thirteenth transistor is connected to the comparator 3 and supplies it with the reference voltage Vb 2.
Referring to fig. 4, the comparator 3 in the embodiment of the present invention adopts a cascade structure of a positive feedback judgment stage and an output buffer stage, and includes: a fourteenth transistor M14, a fifteenth transistor M15, a sixteenth transistor M16, a seventeenth transistor M17, an eighteenth transistor M18, a nineteenth transistor M19, a twentieth transistor M20, a twenty-first transistor M21, a twentieth transistor M22, a twenty-third transistor M23, a twenty-fourth transistor M24, a twenty-fifth transistor M25, a twenty-sixth transistor M26, a twenty-seventh transistor M27, a twenty-eighth transistor M28, a twenty-ninth transistor M29, and a comparison power supply VDD 3. The source of the fourteenth transistor M14 and the source of the fifteenth transistor M15 are connected to the comparison power supply VDD3, the gate of the fourteenth transistor M14 and the sub transimpedance amplifier 2 are connected to receive the reference voltage Vb2 provided by the sub transimpedance amplifier, and the drain of the fourteenth transistor M14 and the drain of the sixteenth transistor M16 are connected to the gate of the seventeenth transistor M17, the drain and the gate of the eighteenth transistor M18, and the gate of the twenty-fourth transistor M24; the gate of the fifteenth transistor is connected with the output terminal Vout of the main transimpedance amplifier 1, and the drain of the fifteenth transistor M15 is connected with the gate of the sixteenth transistor M16, and then is connected with the drain of the seventeenth transistor M17, the drain and the gate of the nineteenth transistor M19, and the gate of the twenty-third transistor M23; the source of the sixteenth transistor M16 and the source of the seventeenth transistor M17 are connected to the source of the eighteenth transistor M18, the source of the nineteenth transistor M19, and the drain and gate of the twentieth transistor M20; the source of the twentieth transistor M20 is grounded; the source of the twenty-first transistor M21 and the source of the twenty-second transistor M22 are connected and then connected with the comparison power supply VDD3, and the gate of the twenty-first transistor M21 and the gate of the twenty-second transistor M22 are connected and then connected with the drain of the twenty-first transistor M21 and the drain of the twenty-third transistor M23; the drain of the twenty-second transistor M22 is connected to the drain of the twenty-fourth transistor M24, and then to the gate of the twenty-sixth transistor M26 and the gate of the twenty-seventh transistor M27; the source electrode of the twenty-third transistor M23 and the source electrode of the twenty-fourth transistor M24 are connected and then connected with the drain electrode of the twenty-fifth transistor M25; the gate of the twenty-fifth transistor M25 is connected with the secondary transimpedance amplifier 2 and receives the voltage Vb2 provided by the secondary transimpedance amplifier, and the source of the twenty-fifth transistor M25 is grounded; the source of the twenty-sixth transistor M26 is connected with the comparison power supply VDD3, and the drain of the twenty-sixth transistor M26 is connected with the drain of the twenty-seventh transistor M27 and then connected with the gate of the twenty-eighth transistor M28 and the gate of the twenty-ninth transistor M29; the source of the twenty-seventh transistor M27 is grounded; the source of the twenty-eighth transistor M28 is connected with the comparison power supply VDD3, and the drain of the twenty-eighth transistor M28 is connected with the drain of the twenty-ninth transistor M29; the source of the twenty-ninth transistor M29 is grounded; the drain of the twenty-eighth transistor M28 serves as the output Vc of the comparator 3.
In the overall circuit configuration of the present invention, Iin is an input current signal, and Vout is an output voltage signal. When Iin is relatively small, the control voltage Vc provided by the comparator is at a high level, the transimpedance is large, and as Iin increases, the control voltage Vc changes to a low level, and the transimpedance decreases accordingly. The power supply voltage VDD1, VDD2, VDD3, and the input capacitance Cin, 0.5pF are taken, and through setting the sizes of the transistors, it is verified by simulation that the static power consumption of the embodiment of the present invention can be as low as 270uW, the occupied area is 7200um2, the transimpedance gain range is 64-75 dB Ω, the bandwidth is 6MHz, and the input reference noise is 0.028pA/sqrt (hz) @10 KHz.
The main transimpedance amplifier 1 comprises a modified RGC input stage, a source follower, a common source stage, a peak detector and a feedback resistor. The first transistor M1, the second transistor M2, the third transistor M3, the fourth transistor M4, the first resistor R1 and the second resistor R2 form an improved RGC input stage; compared with the traditional RGC input stage, the power consumption is reduced on the premise of not sacrificing the area by adopting the second transistor M2 working in a triode region to replace a resistor; the gate of the fourth transistor M4 is not directly connected to the input point, but is connected to the bias Vb1 provided by the secondary transimpedance amplifier 2, so that the bias voltage is more stable; the third transistor M3 forms a cascode structure, which reduces the miller effect and also provides a bias for the sixth transistor M6. The fifth transistor M5 and the sixth transistor M6 form a source follower for isolating the RGC input stage from the rest of the circuit; the fixed-bias sixth transistor M6 can be regarded as a current source, which not only can effectively improve the output swing of the source follower, but also can effectively reduce the noise caused by the resistance. The seventh transistor M7 and the eighth transistor M8 form a common source stage for increasing the gain; the use of the seventh transistor M7 operating in the triode region instead of a resistor reduces power consumption without sacrificing area. The peak detector is composed of R3 and C1 and is used for outputting the average output voltage of the common source stage circuit. The feedback resistors R4 and R5 are used to amplify and convert the weak input current signal into a current signal. Because the two ends of the feedback resistor are respectively connected with the drain electrode of the first transistor M1 and the drain electrode of the eighth transistor M8, but not connected with the input point and the output point, the bandwidth of the main transimpedance amplifier is increased, and the circuit stability is also improved; the ninth transistor M9 is equivalent to a switch, when the input current is relatively small, the control voltage Vc provided by the comparator 3 is at a high level, the switch is turned off, the transimpedance is large, and as the input current increases, the control voltage Vc changes to a low level, the switch is turned on, and the transimpedance decreases accordingly.
The secondary transimpedance amplifier 2 retains only the RGC input stage portion in the main transimpedance amplifier for providing the necessary bias voltage Vb1 required by the main amplifier 1 and for providing the input reference voltage Vb2 of the comparator 3. Unlike the main transimpedance amplifier 1, the gate of the thirteenth transistor M13 is connected to the drain of the tenth transistor M10, constituting a self-biasing architecture to simplify the circuit.
The comparator 3 comprises a positive feedback decision stage and an output buffer stage. The positive feedback judging stage adopts a synchronous full-differential positive feedback structure; the fourteenth transistor M14 and the fifteenth transistor M15 constitute a differential input structure; the eighteenth transistor M18 and the nineteenth transistor M19 are diode-connected loads; the sixteenth transistor M16 and the seventeenth transistor M17 adopt a grid cross coupling mode to realize positive feedback, accelerate the turning speed of the circuit state, improve the resolution precision of input and further improve the gain; the main function of the twentieth diode-connected transistor M20 is to pull up the output of the decision circuit. The output buffer stage consists of a differential operational amplifier and two cascaded CMOS inverters; the differential operational amplifier completes the conversion from double-end to single-end, and increases the capacity of the comparator 3 for sucking and supplying output current by improving tail current and using a current mirror; the twenty-sixth transistor M26 to the twenty-ninth transistor M29 form two cascaded push-pull CMOS single-stage amplifiers, which can be used as an additional gain stage, realize the isolation between a load capacitor and an operational amplifier, have no limit of slew rate when driving a large capacitive load, and improve the load driving capability of the comparator 3.
Compared with the prior art, the trans-impedance amplifier provided by the embodiment of the invention has the beneficial effects that: a trans-impedance amplifier circuit with low power consumption and small occupied area is provided for wearable PPG signal detection.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (6)

1. A transimpedance amplifier suitable for wearable PPG signal detection is characterized by comprising a main transimpedance amplifier, an auxiliary transimpedance amplifier and a comparator; the first output end of the secondary transimpedance amplifier is connected with the main transimpedance amplifier to provide a bias voltage for the main transimpedance amplifier, the second output end of the secondary transimpedance amplifier is connected with the positive input end of the comparator to provide an input reference voltage for the comparator, the negative input end of the comparator is connected with the output end of the main transimpedance amplifier, the output end of the comparator is connected with the main transimpedance amplifier, the comparator is used for comparing the output voltage of the main transimpedance amplifier with the reference voltage provided by the secondary transimpedance amplifier and outputting a binary signal, and further, the amplification factor of the main transimpedance amplifier is changed to realize automatic gain control, and the main transimpedance amplifier comprises: the power supply comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, a ninth transistor, a first resistor, a second resistor, a third resistor, a fourth resistor, a fifth resistor, a first capacitor and a main power supply; a drain of the first transistor and one end of the first resistor are connected and then connected to a gate of the fifth transistor, one end of the fourth resistor, and one end of the fifth resistor, a gate of the first transistor and a drain of the second transistor are connected and then connected to a drain of the third transistor, and a source of the first transistor and one end of the second resistor are connected; the source electrode of the second transistor is connected with the main span power supply, and the grid electrode of the second transistor is grounded; the grid electrode of the third transistor is connected with the main span power supply, and the source electrode of the third transistor is connected with the drain electrode of the fourth transistor and then connected with the grid electrode of the sixth transistor; the grid electrode of the fourth transistor is connected with a bias Vb1 provided by the secondary trans-impedance amplifier, and the source electrode of the fourth transistor is grounded; the drain electrode of the fifth transistor is connected with the main span power supply, and the source electrode of the fifth transistor is connected with the drain electrode of the sixth transistor and then connected with the grid electrode of the eighth transistor; the source electrode of the sixth transistor is grounded; the source of the seventh transistor is connected with the main cross power supply, the gate of the seventh transistor is grounded, and the drain of the seventh transistor and the drain of the eighth transistor are connected and then connected with one end of the third resistor, the other end of the fourth resistor and the drain of the ninth transistor; a source of the eighth transistor is grounded; the source of the ninth transistor is connected with the other end of the fifth resistor, and the gate of the ninth transistor is connected with the output end of the comparator; the other end of the first resistor is connected with the main span power supply; the other end of the second resistor is grounded; the other end of the third resistor is connected with the first capacitor; the other end of the first capacitor is grounded; the source of the first transistor is used as the current input end of the main transimpedance amplifier, and the other end of the third resistor is used as the output end of the main transimpedance amplifier.
2. The transimpedance amplifier for wearable PPG signal detection according to claim 1, wherein the first, third, fourth, fifth, sixth, and eighth transistors are NMOS transistors; the second transistor, the seventh transistor and the ninth transistor are all PMOS tubes.
3. The transimpedance amplifier suitable for wearable PPG signal detection according to claim 1 or 2, wherein the secondary transimpedance amplifier comprises: a tenth transistor, an eleventh transistor, a twelfth transistor, a thirteenth transistor, a sixth resistor, a seventh resistor, and a secondary power supply; a drain of the tenth transistor is connected to one end of the sixth resistor, a gate of the tenth transistor is connected to a drain of the eleventh transistor and then connected to a drain of the twelfth transistor, and a source of the tenth transistor is connected to one end of the seventh resistor and then connected to a gate of the thirteenth transistor; the source of the eleventh transistor is connected with the secondary cross power supply, and the gate of the eleventh transistor is grounded; a gate of the twelfth transistor is connected to a secondary cross power supply, and a source of the twelfth transistor is connected to a drain of the thirteenth transistor; a source of the thirteenth transistor is grounded; the other end of the sixth resistor is connected with the secondary cross power supply; the other end of the seventh resistor is grounded; the gate of the thirteenth transistor is used as the first output end of the secondary transimpedance amplifier, is connected with the main transimpedance amplifier and provides bias voltage for the main transimpedance amplifier, and the drain of the thirteenth transistor is used as the second output end of the secondary transimpedance amplifier and is connected with the positive input end of the comparator and provides reference voltage for the comparator.
4. The transimpedance amplifier for wearable PPG signal detection according to claim 3, wherein the tenth, twelfth and thirteenth transistors are NMOS transistors; the eleventh transistor is a PMOS tube.
5. The transimpedance amplifier suitable for wearable PPG signal detection according to claim 4, wherein the comparator comprises: a fourteenth transistor, a fifteenth transistor, a sixteenth transistor, a seventeenth transistor, an eighteenth transistor, a nineteenth transistor, a twentieth transistor, a twenty-first transistor, a twentieth transistor, a twenty-third transistor, a twenty-fourth transistor, a twenty-fifth transistor, a twenty-sixth transistor, a twenty-seventh transistor, a twenty-eighth transistor, a twenty-ninth transistor, and a comparison power supply; a source of the fourteenth transistor and a source of the fifteenth transistor are connected and then connected to the comparison power supply, a gate of the fourteenth transistor is connected to the secondary transimpedance amplifier as a forward input terminal of the comparator, and a drain of the fourteenth transistor and a drain of the sixteenth transistor are connected and then connected to a gate of the seventeenth transistor, a drain and a gate of the eighteenth transistor, and a gate of the twenty-fourth transistor; a gate of the fifteenth transistor is connected to the main transimpedance amplifier as a negative input terminal of the comparator, and a drain of the fifteenth transistor and a gate of the sixteenth transistor are connected to a drain of the seventeenth transistor, a drain and a gate of the nineteenth transistor, and a gate of the twenty-third transistor; a source of the sixteenth transistor and a source of the seventeenth transistor are connected and then connected to a source of the eighteenth transistor, a source of the nineteenth transistor, a drain of the twentieth transistor, and a gate; a source of the twentieth transistor is grounded; the source of the twenty-first transistor and the source of the twenty-second transistor are connected and then connected with the comparison power supply, and the gate of the twenty-first transistor and the gate of the twenty-second transistor are connected and then connected with the drain of the twenty-first transistor and the drain of the twenty-third transistor; the drain of the twenty-second transistor is connected with the drain of the twenty-fourth transistor and then connected with the gate of the twenty-sixth transistor and the gate of the twenty-seventh transistor; the source electrode of the twenty-third transistor and the source electrode of the twenty-fourth transistor are connected and then connected with the drain electrode of the twenty-fifth transistor; the grid electrode of the twenty-fifth transistor is connected with the auxiliary trans-impedance amplifier, and the source electrode of the twenty-fifth transistor is grounded; the source of the twenty-sixth transistor is connected with the comparison power supply, and the drain of the twenty-sixth transistor and the drain of the twenty-seventh transistor are connected and then connected with the gate of the twenty-eighth transistor and the gate of the twenty-ninth transistor; the source electrode of the twenty-seventh transistor is grounded; a source of the twenty-eighth transistor is connected to the comparison power supply, and a drain of the twenty-eighth transistor is connected to a drain of the twenty-ninth transistor; a source of the twenty-ninth transistor is grounded; and the drain electrode of the twenty-eighth transistor is used as the output end of the comparator.
6. The transimpedance amplifier for wearable PPG signal detection according to claim 5, wherein the sixteenth transistor, the seventeenth transistor, the eighteenth transistor, the nineteenth transistor, the twentieth transistor, the twenty-third transistor, the twenty-fourth transistor, the twenty-fifth transistor, the twenty-seventh transistor, and the twenty-ninth transistor are NMOS transistors; the fourteenth transistor, the fifteenth transistor, the twenty-first transistor, the twenty-second transistor, the twenty-sixth transistor, and the twenty-eighth transistor are all PMOS transistors.
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