CN107564929A - A kind of array base palte and preparation method thereof, display panel, display device - Google Patents
A kind of array base palte and preparation method thereof, display panel, display device Download PDFInfo
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- CN107564929A CN107564929A CN201710865321.1A CN201710865321A CN107564929A CN 107564929 A CN107564929 A CN 107564929A CN 201710865321 A CN201710865321 A CN 201710865321A CN 107564929 A CN107564929 A CN 107564929A
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Abstract
The application provides a kind of array base palte and preparation method thereof, display panel and display device, the luminescence unit that the switching tube with Two-dimensional electron gas-bearing formation and LED are formed is made wherein on array base palte, voltage is applied by the 3rd electrode layer to switching tube, control the pinch off or opening of Two-dimensional electron gas-bearing formation, so as to the first electrode layer of controlling switch pipe and the disconnection or conducting of the second electrode lay, wherein, transparency conducting layer on the second electrode lay of switching tube and LED p type semiconductor layer is electrically connected with, and LED n type semiconductor layer is connected with the 3rd transmission line, it is powered on the 3rd transmission line, control the potential of the 3rd electrode layer, and then the electric current on control LED p type semiconductor layer and n type semiconductor layer, and then control lighting or closing for LED, so as to reach the purpose of display picture.Due to the high mobility of Two-dimensional electron gas-bearing formation, switching tube can be minimized, and then realize sharpness screen curtains of the LED as miniaturized electronics.
Description
Technical field
The present invention relates to photoelectron technical field, more particularly to it is a kind of array base palte and preparation method thereof, display panel, aobvious
Showing device.
Background technology
In recent years, Organic Light Emitting Diode (OLED) is because relative to relative liquid crystal display (LCD) device in self-luminous, work(
Consuming low, brightness, contrast and visual angle has obvious advantage, and is widely used and makees display device.Although organic light emission two
Pole pipe (OLED) and selfluminous element, but OLED is still bright relative to GaN base light emitting (LED), luminous efficiency, life-span
It is aobvious poor.
With the continuous development of electronic product, the pixel more and more higher of electronic product screen, LCD or OLED display light
Less efficient, the endurance of electronic product welcomes challenge, therefore, will if can apply LED in the screen of electronic product
Luminous efficiency can be greatly improved, so as to save electric energy.
But the application of LED displays at present is typically used as on the ad display screen curtain of indoor and outdoor, and multiple battle arrays are set on giant-screen
Multiple LED lamp beads of arrangement are arranged, using each LED lamp bead as a pixel, shape is lighted by control each LED lamp bead
State, control whole large screen display picture.When LED is applied to the display of indoor and outdoor, pixel is all discrete LED lamp bead, lamp
Point spacing between pearl and lamp bead in current art, it is relatively advanced it is horizontal be 0.8mm (i.e. P0.8).Point spacing should for 0.8mm
It is substantially infeasible during with the electronic product display screen curtain required in high-resolution.
The content of the invention
In view of this, the present invention provides a kind of array base palte and preparation method thereof, display panel, display device, to solve
LED discrete devices can not be applied on the micro display screen of high-resolution requirement in the prior art, or can not be applied to collect
The problem of on into the display screen of display..
To achieve the above object, the present invention provides following technical scheme：
A kind of array base palte, including：
Substrate, the n type semiconductor layer formed with flood on a surface of the substrate, the substrate include wiring region,
Switch region and viewing area；
On the substrate of the wiring region, and a plurality of first transmission line and a plurality of second that transposition insulator is set transmits
Line, a plurality of first transmission line and a plurality of second transmission line limit multiple pixel cells；
On the substrate of the wiring region, the 3rd transmission line with the first transmission line transposition insulator setting；
First transmission line and second transmission line pass with the n type semiconductor layer insulation set, the described 3rd
Defeated layer and the n type semiconductor layer Ohmic contact；
Each pixel cell is divided into the switch region and the viewing area, and the switch region is provided with switching tube,
The viewing area is provided with luminescence unit；
On the substrate, and along on the direction of the substrate：
The luminescence unit includes luminescent layer and p type semiconductor layer, the transparency conducting layer and insulating barrier set gradually；
The switching tube include set gradually the luminescent layer, the p type semiconductor layer, the first film layer, the second film layer,
The insulating barrier, and with the insulating barrier with layer set and laid out in parallel first electrode layer, the second electrode lay, described first
Electrode layer, the second electrode lay with the second film layer Ohmic contact, are located or positioned at layer described with the insulating barrier
Threeth electrode layer of the insulating barrier on the surface of the substrate, the 3rd electrode layer and the second film layer Schottky contacts
Or insulation；
Wherein, formed with Two-dimensional electron gas-bearing formation, the first electrode layer between first film layer and second film layer
It is electrically connected with second transmission line, the transparency conducting layer of the second electrode lay and the luminescence unit electrically connects
Connect, the 3rd electrode layer is electrically connected with first transmission line, and the 3rd electrode layer is used to control the first electrode
Layer and the second electrode lay are by the Two-dimensional electron gas-bearing formation on and off, to control lighting or closing for the luminescence unit
Close.
A kind of array substrate manufacturing method, above-mentioned array base palte, the array substrate manufacturing method are formed for making
Including：
Substrate is provided, the substrate includes viewing area, switch region and wiring region；
Epitaxial growth light emitting diode epitaxial structure, the first film layer and the second film layer successively on the substrate, wherein, institute
State light emitting diode epitaxial structure and comprise at least n type semiconductor layer, luminescent layer and p type semiconductor layer, first film layer and institute
State and Two-dimensional electron gas-bearing formation formed between the second film layer, and the lattice of first film layer and the lattice of second film layer with it is described
The Lattice Matching of light emitting diode epitaxial structure；
Remove second film layer in region between the wiring region and the viewing area and the switch region, described
One film layer, the p type semiconductor layer, the luminescent layer, expose the n type semiconductor layer of the wiring region；And remove described aobvious
Show second film layer corresponding to area and first film layer, expose the p type semiconductor layer of the viewing area；
Transparency conducting layer is formed on the p type semiconductor layer exposed；
Insulating barrier is formed on the body structure surface of all exposures；
Form first electrode layer, the second electrode lay and the 3rd electrode layer of mutually insulated on the switch region, described the
One electrode layer, the second electrode lay with the second film layer Ohmic contact, the 3rd electrode layer and second film layer
Insulation or Schottky contacts；
The first transmission line, the second transmission line, the 3rd transmission line and connection metal wire are formed in the wiring region, wherein, institute
State the first transmission line and the second transmission line transposition insulator is set, and be respectively positioned on the insulating barrier, first transmission line
It is electrically connected with the 3rd electrode layer, second transmission line is electrically connected with the first electrode layer, the 3rd transmission
Line is set with the first transmission line parallel insulation, and the 3rd transmission line passes through the insulating barrier and the N-type semiconductor
Layer Ohmic contact, the connection metal wire connect the second electrode lay and the transparency conducting layer.
The present invention also provides a kind of array base palte, including：
Substrate, a surface of the substrate include the first film layer and the second film successively along on the direction of the substrate
Layer, between first film layer and second film layer formed Two-dimensional electron gas-bearing formation, the substrate include wiring region, switch region and
Viewing area；
On the substrate of the wiring region, and a plurality of first transmission line and a plurality of second that transposition insulator is set transmits
Line, a plurality of first transmission line and a plurality of second transmission line limit multiple pixel cells；
On the substrate of the wiring region, the 3rd transmission line with the first transmission line transposition insulator setting；
N type semiconductor layer, first transmission line and second transmission line are additionally provided with the substrate of the wiring region
With the n type semiconductor layer insulation set, the 3rd transport layer and the n type semiconductor layer Ohmic contact；
Each pixel cell includes switch region and viewing area, and the switch region is provided with switching tube, the display
Area is provided with luminescence unit；
On the substrate, and along on the direction of the substrate：
The n type semiconductor layer, luminescent layer and p type semiconductor layer that the luminescence unit includes setting gradually, transparent lead
Electric layer and insulating barrier；
The switching tube includes insulating barrier and with the insulating barrier with the first electrode layer of layer setting and laid out in parallel, second
Electrode layer, the first electrode layer, the second electrode lay with the second film layer Ohmic contact, with the same layer of the insulating barrier
It is located or positioned at threeth electrode layer of the insulating barrier on the surface of the substrate, the 3rd electrode layer and described second
Film layer Schottky contacts or insulation；
Wherein, the first electrode layer is electrically connected with second transmission line, and the second electrode lay lights with described
The transparency conducting layer of unit is electrically connected with, and the 3rd electrode layer is electrically connected with first transmission line, and the described 3rd
Electrode layer is used to control the first electrode layer and the second electrode lay by the Two-dimensional electron gas-bearing formation on and off, with
Control lighting or closing for the luminescence unit.
Accordingly, a kind of array substrate manufacturing method is also provided, array base palte recited above, institute are formed for making
Stating array substrate manufacturing method includes：
Substrate is provided, the substrate includes viewing area, switch region and wiring region；
The film layer of epitaxial growth first, the second film layer and light emitting diode epitaxial structure successively on the substrate, wherein, institute
State light emitting diode epitaxial structure and comprise at least n type semiconductor layer, luminescent layer and p type semiconductor layer, first film layer and institute
State and Two-dimensional electron gas-bearing formation formed between the second film layer, and the lattice of first film layer and the lattice of second film layer with it is described
The Lattice Matching of light emitting diode epitaxial structure；
The p type semiconductor layer of the wiring region and the luminescent layer are removed, the N-type for exposing the wiring region is partly led
Body layer；And the p type semiconductor layer, the luminescent layer, the n type semiconductor layer of the switch region are removed, expose described
Second film layer of switch region；
Transparency conducting layer is formed on the p type semiconductor layer of the viewing area；
Insulating barrier is formed on the body structure surface of all exposures；
Form first electrode layer, the second electrode lay and the 3rd electrode layer of mutually insulated on the switch region, described the
One electrode layer, the second electrode lay with the second film layer Ohmic contact, the 3rd electrode layer and second film layer
Insulation or Schottky contacts；
The first transmission line, the second transmission line, the 3rd transmission line and connection metal wire are formed in the wiring region, wherein, institute
State the first transmission line and the second transmission line transposition insulator is set, and be respectively positioned on the insulating barrier, first transmission line
It is electrically connected with the 3rd electrode layer, second transmission line is electrically connected with the first electrode layer, the 3rd transmission
Line is set with the first transmission line parallel insulation, and the 3rd transmission line passes through the insulating barrier and the N-type semiconductor
Layer Ohmic contact, the connection metal wire connect the second electrode lay and the transparency conducting layer.
The present invention also provides a kind of display panel, including array base palte recited above.
Simultaneously, there is provided a kind of display device, including the display panel.
Understood via above-mentioned technical scheme, array base palte provided by the invention, including substrate, it is in array on substrate
Multiple pixel cells of arrangement, each pixel cell include switch region and viewing area, and wherein viewing area is LED epitaxial structure, use
It is luminous in realizing, and switch region includes the first film layer and the second film layer, and first electrode layer, second electrode are provided with the second film layer
Layer and the 3rd electrode layer, are wherein provided with transparency conducting layer, transparency conducting layer and second on the P-type semiconductor of LED epitaxial structure
Electrode layer is electrically connected with, wherein, the 3rd electrode layer is used to controlling the first electrode layer and the second electrode lay pass through it is described
Two-dimensional electron gas-bearing formation on and off, to control lighting or closing for the luminescence unit.
Namely array base palte provided by the invention, realize the communication channel of switching tube using Two-dimensional electron gas-bearing formation, and by its
In an electrode layer be connected with the electrode of light emitting diode, another electrode of light emitting diode is connected with the 3rd transmission line,
Switching tube is formed between the two poles of the earth of light emitting diode, forms active matrix array substrate, by active matrix driving, is realized multiple luminous
The bright dark control in area, so as to obtain the LED display curtain of high-resolution integrated form.
The preparation method that array base palte is provided corresponding to the present invention, for making the array base palte.
Meanwhile the present invention also provides a kind of display panel and display device, the display panel and display device use
The array base palte, so as to obtain high-luminous-efficiency, high-resolution miniaturization LED screen.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the required accompanying drawing used in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
The embodiment of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of overlooking the structure diagram of array base palte provided in an embodiment of the present invention；
Fig. 2A is along the diagrammatic cross-section of AA ' lines in Fig. 1；
Fig. 2 B are along the diagrammatic cross-section of BB ' lines in Fig. 1；
Fig. 2 C are along the diagrammatic cross-section of CC ' lines in Fig. 1；
Fig. 3 is a kind of array base palte Making programme schematic diagram provided in an embodiment of the present invention；
Fig. 4 A- Fig. 4 D are that the array base palte processing step section of the AA ' lines provided in an embodiment of the present invention along Fig. 1 is illustrated
Figure；
Fig. 5 A are the diagrammatic cross-section of another embodiment AA ' lines along Fig. 1；
Fig. 5 B are the diagrammatic cross-section of another embodiment BB ' lines along Fig. 1；
Fig. 5 C are the diagrammatic cross-section of another embodiment CC ' lines along Fig. 1；
Fig. 6 is another array base palte Making programme schematic diagram provided in an embodiment of the present invention；
Fig. 7 A- Fig. 7 D are that the array base palte processing step section of the AA ' lines provided in an embodiment of the present invention along Fig. 1 is illustrated
Figure；
Fig. 8 is a kind of display device structure schematic diagram provided in an embodiment of the present invention.
Embodiment
Just as described in the background section, OLED or LCD luminous efficiency does not have the directly luminous efficiency highs of LED, so as to
Endurance to electronic product and (under such as daylight, existing LCD, OLED screen are all very tired when needing high brightness applications
Difficult clear display, it is necessary to strengthen the brightness of display screen backgrounds lamp) etc. cause larger challenge.And LED uses usually as discrete device
What it is in screen display is usually indoor and outdoor giant-screen, realizes that picture is shown using lighting for LED lamp bead.Because LED is applied to small
The difficulty of type screen is larger so that LED is limited in the application of the field of display.
Specifically, inventor has found, it is passive as pixel, use according to LED when LED is applied into display screen
Driving, that is, need the positive pole and negative outside wire in every LEDs, synchronization signal can only control single LEDs pixel, this collection
It can not meet that full-color and resolution ratio is relatively low into structure.
Based on this, the present invention provides a kind of array base palte and preparation method thereof, for realizing that LED replaces LCD and OLED to use
Make display screen, the shortcomings that when avoiding passive drive using active matrix driving, namely directly directly produced in LED epitaxial structure
Active driving matrix LED chip, by two-dimensional electron gas (HEMT) switching function, realize single LEDs it is bright with it is dark.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other under the premise of creative work is not made
Embodiment, belong to the scope of protection of the invention.
Fig. 1-Fig. 2 C are referred to, the present invention provides a kind of array base palte, including：
Substrate 101, the n type semiconductor layer 102 formed with flood on a surface of substrate 101, substrate 101 include wiring
Area 1, switch region 2 and viewing area 3, overlooking the structure diagram shown in Figure 1.
On the substrate 101 of wiring region 1, and a plurality of first transmission line 11 and a plurality of second that transposition insulator is set transmits
Line 12, a plurality of first transmission line 11 and a plurality of second transmission line 12 limit multiple pixel cells；On the substrate of wiring region 1
101, the 3rd transmission line 13 set with the transposition insulator of the first transmission line 11.
First transmission line 11 and the second transmission line 12 refer to the most left of Fig. 2A with the insulation set of n type semiconductor layer 102
Shown in the wiring region 1 of side part；3rd transport layer 13 and the Ohmic contact of n type semiconductor layer 102；Fig. 2 C are referred to, are edge in Fig. 1
CC ' cross section structure schematic diagram, the 3rd transmission line 13 are directly connected to n type semiconductor layer 102, formation Ohmic contact, and first
Insulating barrier 110 is provided between transmission line 11 and n type semiconductor layer 102, between the first transmission line 11 and the 3rd transmission line 13
By setting insulating barrier 120 to form insulation set.
It should be noted that the first transmission line 11, the stacked relationship up and down of the second transmission line 12 are not limited in the present embodiment,
As long as transposition insulator is set.Similarly, the stacked relationship up and down of the first transmission line 11 and the 3rd transmission line, Fig. 2 C are not limited
In it is merely illustrative, application scheme is not limited.
Each pixel cell is divided into switch region 2 and viewing area 3, and switch region 2 is provided with switching tube, and viewing area is provided with hair
Light unit；On substrate 101, and along on the direction of substrate 101：Luminescence unit includes the luminescent layer 103 set gradually
With p type semiconductor layer 104, transparency conducting layer 108 and insulating barrier 110.
Switching tube include set gradually luminescent layer 103, p type semiconductor layer 104, the first film layer 105, the second film layer 107,
Insulating barrier 110, and with insulating barrier 110 with layer setting and first electrode layer 21, the second electrode lay 22 of laid out in parallel, the first electricity
With the Ohmic contact of the second film layer 107, insulating barrier 110 is located or positioned at insulating barrier with 110 layers for pole layer 21, the second electrode lay 22
The 3rd electrode layer 23 on the surface of substrate, the 3rd electrode layer 23 and the Schottky contacts of the second film layer 107 or insulation, please join
As shown in Fig. 2A, the 3rd electrode layer 23 and the Schottky contacts of the second film layer 107, when the 3rd electrode layer 23 and the second film layer 107 are exhausted
When edge is set, the 3rd electrode layer 23 is directly produced on the top of insulating barrier 110.
Wherein, between the first film layer 105 and the second film layer 107 formed with Two-dimensional electron gas-bearing formation 106, first electrode layer 21 with
Second transmission line 12 is electrically connected with, and the transparency conducting layer 108 of the second electrode lay 22 and luminescence unit is electrically connected with, and refers to Fig. 2 B
It is shown, be Fig. 1 in along BB ' lines schematic cross-section, wherein, the second electrode lay 22 is with transparency conducting layer 108 by being connected metal
Layer 109 connects.
3rd electrode layer 23 is electrically connected with the first transmission line 11, and the 3rd electrode layer 23 is used to control the He of first electrode layer 21
The second electrode lay 22 is by the on and off of Two-dimensional electron gas-bearing formation 106, to control lighting or closing for luminescence unit.
From figure 1 it appears that each pixel cell includes LED viewing areas and switch region in the present invention, pass through active square
The HEMT switches of battle array control the LED in each pixel cell luminous or closed, so as to realize that the LED array being arranged in array is shown
Picture.
It should be noted that the concrete structure of light emitting diode is not limited in the present embodiment, including at least N-type semiconductor
Layer, luminescent layer and p type semiconductor layer, in other embodiments of the invention, LED can also including superlattice structure etc. structure,
This is not limited in the present embodiment, and does not limit LED specific material in the present embodiment, optionally, in the present embodiment
Light emitting diode is GaN base light emitting, wherein the n type semiconductor layer is N-type GaN layer, the p type semiconductor layer is P
Type GaN layer；Those skilled in the art can also learn that other light emitting diodes also can on the basis of creative work is not paid
Suitable for HEMT-structure as switching, this is not repeated in the present embodiment.
For GaN base light emitting, the first film layer and the second film layer epitaxial growth are on LED epitaxial structure, to make
The first film layer and the second film layer and LED epitaxial structure layer Lattice Matching are obtained, growth result is preferable, in the present embodiment alternatively, the
One film layer 105 is GaN layer, and second film layer 107 is AlGaN layer, in other embodiments of the invention, the first film layer 105
For AlGaN layer, second film layer 107 is GaN layer, and this is not limited in the present embodiment.
The material of each electrode layer and each transmission line is not also limited in the present embodiment, for cause metallic conductivity compared with
It is good and more perfect with the Ohmic contact of the second film layer or Schottky contacts, optional in the present embodiment, first electrode layer 21
It is identical with the material of the second electrode lay 22, it is Ti/Al/Ti/Au laminated construction；The material of 3rd electrode layer 23 is Pt/Au
Laminated construction；First transmission line 11, the second transmission line 12, the material of the 3rd transmission line 13 are identical, are Cr/Au lamination knot
The laminated construction of structure or Ni/Au.
The embodiment of the present invention also provides a kind of preparation method of above-mentioned array base palte, as shown in figure 3, including：
S101：Substrate is provided, the substrate includes viewing area, switch region and wiring region；
S102：Epitaxial growth light emitting diode epitaxial structure, the first film layer and the second film layer successively on the substrate, its
In, the light emitting diode epitaxial structure comprises at least n type semiconductor layer, luminescent layer and p type semiconductor layer, first film layer
Form Two-dimensional electron gas-bearing formation between second film layer, and the lattice of first film layer and the lattice of second film layer with
The Lattice Matching of the light emitting diode epitaxial structure；
S103：Remove second film layer in region between the wiring region and the viewing area and the switch region,
First film layer, the p type semiconductor layer, the luminescent layer, expose the n type semiconductor layer of the wiring region；And remove
Second film layer corresponding to the viewing area and first film layer, expose the p type semiconductor layer of the viewing area；
S104：Transparency conducting layer is formed on the p type semiconductor layer exposed；
S105：Insulating barrier is formed on the body structure surface of all exposures；
S106：First electrode layer, the second electrode lay and the 3rd electrode layer of mutually insulated, institute are formed on the switch region
State first electrode layer, the second electrode lay with the second film layer Ohmic contact, the 3rd electrode layer and described second
Film layer insulate or Schottky contacts；
S107：The first transmission line, the second transmission line, the 3rd transmission line and connection metal wire are formed in the wiring region, its
In, first transmission line and the second transmission line transposition insulator are set, and are respectively positioned on the insulating barrier, and described first passes
Defeated line is electrically connected with the 3rd electrode layer, and second transmission line is electrically connected with the first electrode layer, and the described 3rd
Transmission line is set with the first transmission line parallel insulation, and the 3rd transmission line passes through the insulating barrier and the N-type half
Conductor layer Ohmic contact, the connection metal wire connect the second electrode lay and the transparency conducting layer.
Wherein, first electrode layer, the second electrode lay and the 3rd electrode that mutually insulated is formed on the switch region
Layer, the first electrode layer, the second electrode lay with the second film layer Ohmic contact, the 3rd electrode layer with it is described
Second film layer insulate or Schottky contacts, specifically includes：
By chemical etching or dry etching mode, in the insulating barrier upper shed of the switch region, to be formed first is made
Electrode layer region, the second electrode lay region to be formed and the 3rd electrode layer region to be formed；In the first electrode layer to be formed
The first metal is deposited in region and the second electrode lay region to be formed, forms the first electrode layer and second of mutually insulated respectively
Electrode layer, the first electrode layer, the second electrode lay with the second film layer Ohmic contact；The described to be formed 3rd
The second metal is deposited in electrode layer region, forms the 3rd electrode layer, the 3rd electrode layer and the second film layer Schottky contacts.
Or by chemical etching or dry etching mode, in the insulating barrier upper shed of the switch region, make to be formed
First electrode layer region and the second electrode lay region to be formed；In the first electrode layer region to be formed and described to be formed
The first metal is deposited in two electrode layer regions, forms the first electrode layer and the second electrode lay of mutually insulated, first electricity respectively
Pole layer, the second electrode lay with the second film layer Ohmic contact；It is deposited the second metal on the insulating barrier, forms the
Three electrode layers, the 3rd electrode layer insulate with second film layer.
The material of each structure is not limited in the present embodiment, optionally, is illustrated with lower section example, it is necessary to illustrate, its
In the material that is related to and parameter be only indivedual examples, the preparation method of the present invention is not limited.
Specifically, referring to shown in Fig. 4 A- Fig. 4 D, Fig. 4 A- Fig. 4 D are the schematic cross-section of the AA ' lines along Fig. 1.
Fig. 4 A are referred to, the growth n type gallium nitride layer 102 on substrate layer 101, the grown quantum well layer 103 on 102 layers,
The growing P-type gallium nitride layer 104 on 103 layers, the growing gallium nitride layer 105 on 104 layers, namely the first film layer, in gallium nitride layer
Gallium nitride layer 107, namely the second film layer are grown on 105, two-dimentional electricity can be formed between 107 layers of gallium nitride layer 105 and gallium nitride layer
Sub- gas-bearing formation 106；
Fig. 4 B are referred to, on the epitaxial wafer of said structure, switch region and viewing area are protected, pass through plasma
Dry ecthing wiring region is learned, N-type GaN regions are produced, to N-type GaN layer 102；The method for continuing through plasma chemical dry ecthing,
Only the HEMT-structure on LED component region is etched away, the p-type GaN regions of light emitting diode are produced, to p-type GaN layer 104；
Refer to shown in 4C.
Refer to shown in Fig. 4 D, electrically conducting transparent is made by electron beam evaporation or magnetron sputtering mode in p-type GaN layer 104
Layer 108, the transparency conducting layer 108 include but is not limited to ITO, NiAu structure.Again by annealing way, make the electrically conducting transparent
Layer 108 forms Ohmic contact with p-type gallium nitride 104.
Over the entire structure, insulating barrier 110 is grown by PECVD modes, the insulating barrier 110 is silica or nitrogen
SiClx.
Refer to shown in Fig. 2A-Fig. 2 C, on insulating barrier 110, by chemical etching or dry etching mode, etch Lou
Two pole, source electrode regions.And make drain metal layer (namely the present embodiment simultaneously by electron beam evaporation or magnetron sputtering mode
In first electrode layer 21) and source metal (namely the second electrode lay 22 in the present embodiment), the drain metal layer and
Source metal Rotating fields are Ti/Al/Ti/Au laminated construction, then by certain annealing conditions, make drain metal layer 21 and source
Pole metal level 22 forms Ohmic contact with gallium nitride layer 107.
On insulating barrier 110, by chemical etching or dry etching mode, area of grid is etched.
And gate metal layer 23, the gate metal Rotating fields are made by electron beam evaporation or magnetron sputtering mode simultaneously
For Pt/Au lamination metal layers, gate metal layer 23 forms Schottky contacts with gallium nitride layer 107.
Connection metal wire 109 is made, source metal 22 is connected with transparency conducting layer 108.The connection metal level 109
For Cr/Au or Ni/Au metallic stacked structures.
Whole look unfamiliar grows insulating barrier 120 again, and the insulating barrier is silica or silicon nitride.As shown in Fig. 2A, 2C, pass through
The mode of etching, retain drain transmission line 12, gate transmission line 11, common N transmission lines 13 each other by region, make each transmission line
Between keep apart.
As shown in Figure 2 C, on insulating barrier 120, by chemical etching or dry etching mode, specific common N transmission is etched
Line region, then gate transmission line 12 and common N transmission lines 13 are made by electron beam evaporation or magnetron sputtering mode simultaneously, grid passes
Defeated line 12 and the common structure of N transmission lines 13 are Cr/Au or Ni/Au metallic stacked structures.
Array base palte provided by the invention, including substrate, the multiple pixel cells being arranged in array on substrate, each
Pixel cell includes switch region and viewing area, and wherein viewing area is LED epitaxial structure, luminous for realizing, and switch region includes
First film layer and the second film layer, first electrode layer, the second electrode lay and the 3rd electrode layer, wherein LED are provided with the second film layer
Transparency conducting layer is provided with the P-type semiconductor of epitaxial structure, transparency conducting layer is electrically connected with the second electrode lay, wherein, the
Three electrode layers are used to control the first electrode layer and the second electrode lay by the Two-dimensional electron gas-bearing formation on and off,
To control lighting or closing for the luminescence unit.
Namely array base palte provided by the invention, realize the communication channel of switching tube using Two-dimensional electron gas-bearing formation, and by its
In an electrode layer be connected with the electrode of light emitting diode, another electrode of light emitting diode is connected with the 3rd transmission line,
Switching tube is formed between the two poles of the earth of light emitting diode, forms active matrix array substrate, by active matrix driving, is realized multiple luminous
The bright dark control in area, so as to obtain high-resolution LED display curtain.Because the relative each layers of LED of HEMT have higher electronics
Mobility, it is very beneficial for the miniaturization of device.
Fig. 1, Fig. 5 A- Fig. 5 C are referred to, the present invention provides a kind of array base palte, including：
Substrate 201, a surface of substrate 201 include the first film layer 202 and second successively along on the direction of substrate
Film layer 204, forms Two-dimensional electron gas-bearing formation 203 between the first film layer 202 and the second film layer 204, substrate 201 includes wiring region 1, opened
Close area 2 and viewing area 3；
On the substrate 201 of wiring region, and a plurality of first transmission line 11 and a plurality of second that transposition insulator is set transmits
Line 12, a plurality of first transmission line 11 and a plurality of second transmission line 12 limit multiple pixel cells；Substrate 201 positioned at wiring region
On, the 3rd transmission line 13 with the setting of the transposition insulator of the first transmission line 11；N-type is additionally provided with the substrate 201 of wiring region partly to lead
Body layer 205, the first transmission line 11 and the second transmission line 12 with the insulation set of n type semiconductor layer 205, refer to the most left of Fig. 5 A
Shown in the wiring region 1 of side part, the 3rd transport layer 13 and the Ohmic contact of n type semiconductor layer 205；Refer to shown in Fig. 5 C.
Each pixel cell includes switch region 2 and viewing area 3, and switch region 2 is provided with switching tube, and viewing area 3 is provided with
Luminescence unit；On substrate 201, and along on the direction of substrate 201：The N-type that luminescence unit includes setting gradually partly is led
Body layer 205, luminescent layer 206 and p type semiconductor layer 207, transparency conducting layer 208 and insulating barrier 210；Refer to the display in Fig. 5 A
Shown in area 3, and in Fig. 5 B shown in the viewing area of center section.
Continuing with referring to Fig. 5 A, switching tube include insulating barrier 210 and set with insulating barrier 210 with layer and laid out in parallel the
One electrode layer 21, the second electrode lay 22, first electrode layer 21, the second electrode lay 22 are and exhausted with the Ohmic contact of the second film layer 204
Edge layer 210 is located or positioned at threeth electrode layer 23 of the insulating barrier on the surface of substrate, the 3rd electrode layer 23 and second with layer
The Schottky contacts of film layer 204 or insulation；
Wherein, first electrode layer 21 is electrically connected with the second transmission line 12, and the second electrode lay 22 is transparent with luminescence unit
Conductive layer 208 is electrically connected with, and in the present embodiment, is referred to shown in Fig. 5 A, between the second electrode lay 22 and transparency conducting layer 208,
It is electrically connected with by connecting metal level 209.
3rd electrode layer 23 is electrically connected with the first transmission line 11, and the 3rd electrode layer 23 is used to control the He of first electrode layer 21
The second electrode lay 22 is by the on and off of Two-dimensional electron gas-bearing formation 203, to control lighting or closing for luminescence unit.
From figure 1 it appears that each pixel cell includes LED viewing areas and switch region in the present invention, pass through active square
The HEMT switches of battle array control the LED in each pixel cell luminous or closed, so as to realize that the LED array being arranged in array is shown
Picture.
It should be noted that the concrete structure of light emitting diode is not limited in the present embodiment, including at least N-type semiconductor
Layer, luminescent layer and p type semiconductor layer, in other embodiments of the invention, LED can also including superlattice structure etc. structure,
This is not limited in the present embodiment, and does not limit LED specific material in the present embodiment, optionally, in the present embodiment
Light emitting diode is GaN base light emitting, wherein the n type semiconductor layer is N-type GaN layer, the p type semiconductor layer is P
Type GaN layer；Those skilled in the art can also learn that other light emitting diodes also can on the basis of creative work is not paid
Suitable for HEMT-structure as switching, this is not repeated in the present embodiment.
For GaN base light emitting, the first film layer and the second film layer epitaxial growth are on LED epitaxial structure, to make
The first film layer and the second film layer and LED epitaxial structure layer Lattice Matching are obtained, growth result is preferable, in the present embodiment alternatively, the
One film layer 202 is GaN layer, and second film layer 204 is AlGaN layer, in other embodiments of the invention, the first film layer 202
For AlGaN layer, second film layer 204 is GaN layer, and this is not limited in the present embodiment.
The material of each electrode layer and each transmission line is not also limited in the present embodiment, for cause metallic conductivity compared with
It is good and more perfect with the Ohmic contact of the second film layer or Schottky contacts, optional in the present embodiment, first electrode layer 21
It is identical with the material of the second electrode lay 22, it is Ti/Al/Ti/Au laminated construction；The material of 3rd electrode layer 23 is Pt/Au
Laminated construction；First transmission line 11, the second transmission line 12, the material of the 3rd transmission line 13 are identical, are Cr/Au lamination knot
The laminated construction of structure or Ni/Au.
The embodiment of the present invention also provides a kind of preparation method of above-mentioned array base palte, as shown in fig. 6, including：
S201：Substrate is provided, the substrate includes viewing area, switch region and wiring region；
S202：Epitaxial growth light emitting diode epitaxial structure, the first film layer and the second film layer successively on the substrate, its
In, the light emitting diode epitaxial structure comprises at least n type semiconductor layer, luminescent layer and p type semiconductor layer, first film layer
Form Two-dimensional electron gas-bearing formation between second film layer, and the lattice of first film layer and the lattice of second film layer with
The Lattice Matching of the light emitting diode epitaxial structure；
S203：Remove second film layer in region between the wiring region and the viewing area and the switch region,
First film layer, the p type semiconductor layer, the luminescent layer, expose the n type semiconductor layer of the wiring region；And remove
Second film layer corresponding to the viewing area and first film layer, expose the p type semiconductor layer of the viewing area；
S204：Transparency conducting layer is formed on the p type semiconductor layer exposed；
S205：Insulating barrier is formed on the body structure surface of all exposures；
S206：First electrode layer, the second electrode lay and the 3rd electrode layer of mutually insulated, institute are formed on the switch region
State first electrode layer, the second electrode lay with the second film layer Ohmic contact, the 3rd electrode layer and described second
Film layer insulate or Schottky contacts；
S207：The first transmission line, the second transmission line, the 3rd transmission line and connection metal wire are formed in the wiring region, its
In, first transmission line and the second transmission line transposition insulator are set, and are respectively positioned on the insulating barrier, and described first passes
Defeated line is electrically connected with the 3rd electrode layer, and second transmission line is electrically connected with the first electrode layer, and the described 3rd
Transmission line is set with the first transmission line parallel insulation, and the 3rd transmission line passes through the insulating barrier and the N-type half
Conductor layer Ohmic contact, the connection metal wire connect the second electrode lay and the transparency conducting layer.
First electrode layer, the second electrode lay and the 3rd electrode layer that mutually insulated is formed on the switch region, institute
State first electrode layer, the second electrode lay with the second film layer Ohmic contact, the 3rd electrode layer and described second
Film layer insulate or Schottky contacts, specifically includes：
By chemical etching or dry etching mode, in the insulating barrier upper shed of the switch region, to be formed first is made
Electrode layer region, the second electrode lay region to be formed and the 3rd electrode layer region to be formed；In the first electrode layer to be formed
The first metal is deposited in region and the second electrode lay region to be formed, forms the first electrode layer and second of mutually insulated respectively
Electrode layer, the first electrode layer, the second electrode lay with the second film layer Ohmic contact；The described to be formed 3rd
The second metal is deposited in electrode layer region, forms the 3rd electrode layer, the 3rd electrode layer and the second film layer Schottky contacts；
Or by chemical etching or dry etching mode, in the insulating barrier upper shed of the switch region, make to be formed
First electrode layer region and the second electrode lay region to be formed；In the first electrode layer region to be formed and described to be formed
The first metal is deposited in two electrode layer regions, forms the first electrode layer and the second electrode lay of mutually insulated, first electricity respectively
Pole layer, the second electrode lay with the second film layer Ohmic contact；It is deposited the second metal on the insulating barrier, forms the
Three electrode layers, the 3rd electrode layer insulate with second film layer.
The material of each structure is not limited in the present embodiment, optionally, is illustrated with lower section example, it is necessary to illustrate, its
In the material that is related to and parameter be only indivedual examples, the preparation method of the present invention is not limited.
Specifically, referring to shown in Fig. 7 A- Fig. 7 D, Fig. 7 A- Fig. 7 D are the schematic cross-section of the AA ' lines along Fig. 1.
Fig. 7 A are referred to, the growing gallium nitride layer 202 on substrate layer 201, namely the first film layer, on gallium nitride layer 202
Gallium nitride layer 204, namely the second film layer are grown, Two-dimensional electron gas-bearing formation can be formed between gallium nitride layer 202 and gallium nitride layer 204
203；Again in the second film layer 204 growth n type gallium nitride layer 205, the grown quantum well layer 206 on 205 layers, P is grown on 206 layers
Type gallium nitride layer 207.
Refer to shown in Fig. 7 B, on said structure, wiring region and viewing area are protected, done using plasma chemical
The method of etching will need the region for being fabricated to switching tube to be etched to gallium nitride layer 204.Then, LED component region and TFT areas
Domain protects, and other regions expose n type gallium nitride layer 205, what is obtained is specific by the method for plasma chemical dry ecthing
Structure refers to Fig. 7 B.
Such as Fig. 7 D, transparency conducting layer is made by electron beam evaporation or magnetron sputtering mode on p-type gallium nitride layer 207
208, transparency conducting layer 208 includes but is not limited to ITO, NiAu structure.Again by annealing way, make transparency conducting layer 208 and p-type
Gallium nitride layer 207 forms Ohmic contact.With continued reference to Fig. 7 D, over the entire structure, insulating barrier is grown by PECVD modes
210, insulating barrier 210 is silica or silicon nitride.
Fig. 5 A are referred to, on insulating barrier 210, by chemical etching or dry etching mode, etch drain electrode, source electrode two
Individual region.And drain metal layer, namely first electrode layer 21 and source are made by electron beam evaporation or magnetron sputtering mode simultaneously
Pole metal level, namely the second electrode lay 22, the structure of the drain metal layer 21 and source metal 22 is Ti/Al/Ti/Au gold
Belong to laminated construction, then by certain annealing conditions, drain metal layer 21 and source metal 22 is formed with gallium nitride layer 204
Ohmic contact.On insulating barrier 210, by chemical etching or dry etching mode, area of grid is etched.And steamed by electron beam
Hair or magnetron sputtering mode make gate metal layer 23 simultaneously, and the structure of the gate metal layer 23 is the metal laminated knots of Pt/Au
Structure, gate metal layer 23 form Schottky contacts with gallium nitride layer 204.Or directly form gate metal on insulating barrier 210
Layer 23 so that insulated between gate metal layer 23 and gallium nitride layer 204.
As shown in Fig. 1 and Fig. 5 A, connection metal level 209 is made, source metal 22 is connected with transparency conducting layer 208.
The structure of the connection metal level 209 is Cr/Au or Ni/Au metallic stacked structures.
Whole look unfamiliar grows insulating barrier 220 again, and the insulating barrier 220 is silica or silicon nitride.As shown in Fig. 5 A, 5C,
Lead to overetched mode, retain drain transmission line 12, gate transmission line 11, common N transmission lines 13 each other by region, make each biography
Keep apart between defeated line.
As shown in Figure 5 C, on insulating barrier 220, by chemical etching or dry etching mode, etch specific common N and pass
Defeated line region, then gate transmission line 12 and common N transmission lines 13, grid are made by electron beam evaporation or magnetron sputtering mode simultaneously
Transmission line 12 and the common structure of N transmission lines 13 are Cr/Au or Ni/Au metallic stacked structures.
Array base palte provided by the invention, including substrate, the multiple pixel cells being arranged in array on substrate, each
Pixel cell includes switch region and viewing area, and wherein viewing area is LED epitaxial structure, luminous for realizing, and switch region includes
First film layer and the second film layer, first electrode layer, the second electrode lay and the 3rd electrode layer, wherein LED are provided with the second film layer
Transparency conducting layer is provided with the P-type semiconductor of epitaxial structure, transparency conducting layer is electrically connected with the second electrode lay, wherein, lead to
The making alive on the 3rd electrode layer is crossed, potential is formed, for controlling the first electrode layer and the second electrode lay to pass through institute
Two-dimensional electron gas-bearing formation on and off is stated, to control lighting or closing for the luminescence unit.
Namely array base palte provided by the invention, realize the communication channel of switching tube using Two-dimensional electron gas-bearing formation, and by its
In an electrode layer be connected with the electrode of light emitting diode, another electrode of light emitting diode is connected with the 3rd transmission line,
Switching tube is formed between the two poles of the earth of light emitting diode, forms active matrix array substrate, by active matrix driving, is realized multiple luminous
The bright dark control in area, so as to obtain high-resolution LED display curtain.Because the relative each layers of LED of HEMT have higher electronics
Mobility, it is very beneficial for the miniaturization of device.
The array base palte provided in the present embodiment is for the array base palte provided in a upper embodiment, the present embodiment
Middle Two-dimensional electron gas-bearing formation is located at below LED epitaxial structure, in terms of the epitaxial growth technology for, because Two-dimensional electron gas-bearing formation is direct
It is grown on substrate, so that the lattice quality of the array base palte provided in the present embodiment is relative to the lattice matter in a upper embodiment
Amount is more preferable.
The embodiment of the present invention also provides a kind of display panel, and the display panel includes array base palte, the array base palte
For any one array base palte in both the above embodiment.
Fig. 8 is the overlooking the structure diagram of display device provided by the invention, and display device 800 includes viewing area 801
Optional in the present embodiment with frame region 802, the display panel of display device is with the array described in above example
The LED display panel of substrate.The concrete form of display device is not limited in the present embodiment, optionally, the display device is intelligence
Can mobile phone, intelligent watch, tablet personal computer and other wearing electronic product display screens, wearing electronic product can include but unlimited
In Intelligent bracelet, intelligent glasses.
It should be noted that each embodiment in this specification is described by the way of progressive, each embodiment weight
Point explanation is all difference with other embodiment, between each embodiment identical similar part mutually referring to.
The foregoing description of the disclosed embodiments, professional and technical personnel in the field are enable to realize or using the present invention.
A variety of modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope caused.
Claims (13)
- A kind of 1. array base palte, it is characterised in that including：Substrate, the n type semiconductor layer formed with flood on a surface of the substrate, the substrate include wiring region, switch Area and viewing area；On the substrate of the wiring region, and a plurality of first transmission line of transposition insulator setting and a plurality of second transmission line, it is more First transmission line described in bar and a plurality of second transmission line limit multiple pixel cells；On the substrate of the wiring region, the 3rd transmission line with the first transmission line transposition insulator setting；First transmission line and second transmission line with the n type semiconductor layer insulation set, the 3rd transport layer With the n type semiconductor layer Ohmic contact；Each pixel cell is divided into the switch region and the viewing area, and the switch region is provided with switching tube, described Viewing area is provided with luminescence unit；On the substrate, and along on the direction of the substrate：The luminescence unit includes luminescent layer and p type semiconductor layer, the transparency conducting layer and insulating barrier set gradually；It is the luminescent layer that the switching tube includes setting gradually, the p type semiconductor layer, the first film layer, the second film layer, described Insulating barrier, and with the insulating barrier with layer setting and first electrode layer, the second electrode lay of laid out in parallel, the first electrode With the second film layer Ohmic contact, the insulation is located or positioned at the insulating barrier with layer for layer, the second electrode lay Threeth electrode layer of the layer on the surface of the substrate, the 3rd electrode layer and the second film layer Schottky contacts or exhausted Edge；Wherein, formed with Two-dimensional electron gas-bearing formation, the first electrode layer and institute between first film layer and second film layer The electric connection of the second transmission line is stated, the transparency conducting layer of the second electrode lay and the luminescence unit is electrically connected with, institute State the 3rd electrode layer to be electrically connected with first transmission line, the 3rd electrode layer is used to control the first electrode layer and institute The second electrode lay is stated by the Two-dimensional electron gas-bearing formation on and off, to control lighting or closing for the luminescence unit.
- 2. array base palte according to claim 1, it is characterised in that the n type semiconductor layer is N-type GaN layer, the P Type semiconductor layer is p-type GaN layer；First film layer is GaN layer, and second film layer is AlGaN layer.
- 3. array base palte according to claim 1, it is characterised in that the first electrode layer and the second electrode lay Material is identical, is Ti/Al/Ti/Au laminated construction；The material of 3rd electrode layer is Pt/Au laminated construction；It is described First transmission line, second transmission line, the material of the 3rd transmission line are identical, are Cr/Au laminated construction or Ni/ Au laminated construction.
- 4. a kind of array substrate manufacturing method, it is characterised in that the battle array described in claim 1-3 any one is formed for making Row substrate, the array substrate manufacturing method include：Substrate is provided, the substrate includes viewing area, switch region and wiring region；Epitaxial growth light emitting diode epitaxial structure, the first film layer and the second film layer successively on the substrate, wherein, the hair Optical diode epitaxial structure comprises at least n type semiconductor layer, luminescent layer and p type semiconductor layer, first film layer and described Two-dimensional electron gas-bearing formation is formed between two film layers, and the lattice of first film layer and the lattice of second film layer light with described The Lattice Matching of diode epitaxial structure；Remove second film layer in region, first film between the wiring region and the viewing area and the switch region Layer, the p type semiconductor layer, the luminescent layer, expose the n type semiconductor layer of the wiring region；And remove the viewing area Corresponding second film layer and first film layer, expose the p type semiconductor layer of the viewing area；Transparency conducting layer is formed on the p type semiconductor layer exposed；Insulating barrier is formed on the body structure surface of all exposures；First electrode layer, the second electrode lay and the 3rd electrode layer of mutually insulated, first electricity are formed on the switch region Pole layer, the second electrode lay insulate with the second film layer Ohmic contact, the 3rd electrode layer with second film layer Or Schottky contacts；The first transmission line, the second transmission line, the 3rd transmission line and connection metal wire are formed in the wiring region, wherein, described the One transmission line and the second transmission line transposition insulator are set, and are respectively positioned on the insulating barrier, first transmission line and institute State the electric connection of the 3rd electrode layer, second transmission line and the first electrode layer are electrically connected with, the 3rd transmission line with The first transmission line parallel insulation is set, and the 3rd transmission line passes through the insulating barrier and the n type semiconductor layer Europe Nurse contacts, and the connection metal wire connects the second electrode lay and the transparency conducting layer.
- 5. array substrate manufacturing method according to claim 4, it is characterised in that described to form phase on the switch region First electrode layer, the second electrode lay and the 3rd electrode layer mutually to insulate, the first electrode layer, the second electrode lay are and institute The second film layer Ohmic contact is stated, the 3rd electrode layer is insulated with second film layer or Schottky contacts, specifically includes：By chemical etching or dry etching mode, in the insulating barrier upper shed of the switch region, first electrode to be formed is made Layer region, the second electrode lay region to be formed and the 3rd electrode layer region to be formed；The first metal is deposited in the first electrode layer region to be formed and the second electrode lay region to be formed, is formed respectively The first electrode layer and the second electrode lay of mutually insulated, the first electrode layer, the second electrode lay with second film Layer Ohmic contact；The second metal is deposited in the 3rd electrode layer region to be formed, forms the 3rd electrode layer, the 3rd electrode layer and institute State the second film layer Schottky contacts；OrBy chemical etching or dry etching mode, in the insulating barrier upper shed of the switch region, first electrode to be formed is made Layer region and the second electrode lay region to be formed；The first metal is deposited in the first electrode layer region to be formed and the second electrode lay region to be formed, is formed respectively The first electrode layer and the second electrode lay of mutually insulated, the first electrode layer, the second electrode lay with second film Layer Ohmic contact；The second metal is deposited on the insulating barrier, forms the 3rd electrode layer, the 3rd electrode layer and second film layer are exhausted Edge.
- A kind of 6. array base palte, it is characterised in that including：Substrate, a surface of the substrate include the first film layer and the second film layer successively along on the direction of the substrate, Two-dimensional electron gas-bearing formation is formed between first film layer and second film layer, the substrate includes wiring region, switch region and shown Show area；On the substrate of the wiring region, and a plurality of first transmission line of transposition insulator setting and a plurality of second transmission line, it is more First transmission line described in bar and a plurality of second transmission line limit multiple pixel cells；On the substrate of the wiring region, the 3rd transmission line with the first transmission line transposition insulator setting；Be additionally provided with n type semiconductor layer on the substrate of the wiring region, first transmission line and second transmission line with The n type semiconductor layer insulation set, the 3rd transport layer and the n type semiconductor layer Ohmic contact；Each pixel cell includes switch region and viewing area, and the switch region is provided with switching tube, and the viewing area is set It is equipped with luminescence unit；On the substrate, and along on the direction of the substrate：The luminescence unit includes the n type semiconductor layer, luminescent layer and p type semiconductor layer, the transparency conducting layer set gradually And insulating barrier；The switching tube includes insulating barrier and with the insulating barrier with layer setting and first electrode layer, the second electrode of laid out in parallel Layer, the first electrode layer, the second electrode lay with the second film layer Ohmic contact, are set with the insulating barrier with layer Or the 3rd electrode layer positioned at the insulating barrier on the surface of the substrate, the 3rd electrode layer and second film layer Schottky contacts or insulation；Wherein, the first electrode layer is electrically connected with second transmission line, the second electrode lay and the luminescence unit The transparency conducting layer be electrically connected with, the 3rd electrode layer and first transmission line are electrically connected with, the 3rd electrode Layer is used to control the first electrode layer and the second electrode lay by the Two-dimensional electron gas-bearing formation on and off, with control The luminescence unit being lighted or closing.
- 7. array base palte according to claim 6, it is characterised in that the n type semiconductor layer is N-type GaN layer, the P Type semiconductor layer is p-type GaN layer；First film layer is GaN layer, and second film layer is AlGaN layer.
- 8. array base palte according to claim 6, it is characterised in that the first electrode layer and the second electrode lay Material is identical, is Ti/Al/Ti/Au laminated construction；The material of 3rd electrode layer is Pt/Au laminated construction；It is described First transmission line, second transmission line, the material of the 3rd transmission line are identical, are Cr/Au laminated construction or Ni/ Au laminated construction.
- 9. a kind of array substrate manufacturing method, it is characterised in that the battle array described in claim 6-8 any one is formed for making Row substrate, the array substrate manufacturing method include：Substrate is provided, the substrate includes viewing area, switch region and wiring region；The film layer of epitaxial growth first, the second film layer and light emitting diode epitaxial structure successively on the substrate, wherein, the hair Optical diode epitaxial structure comprises at least n type semiconductor layer, luminescent layer and p type semiconductor layer, first film layer and described Two-dimensional electron gas-bearing formation is formed between two film layers, and the lattice of first film layer and the lattice of second film layer light with described The Lattice Matching of diode epitaxial structure；The p type semiconductor layer of the wiring region and the luminescent layer are removed, exposes the N-type semiconductor of the wiring region Layer；And the p type semiconductor layer, the luminescent layer, the n type semiconductor layer of the switch region are removed, expose described open Close second film layer in area；Transparency conducting layer is formed on the p type semiconductor layer of the viewing area；Insulating barrier is formed on the body structure surface of all exposures；First electrode layer, the second electrode lay and the 3rd electrode layer of mutually insulated, first electricity are formed on the switch region Pole layer, the second electrode lay insulate with the second film layer Ohmic contact, the 3rd electrode layer with second film layer Or Schottky contacts；The first transmission line, the second transmission line, the 3rd transmission line and connection metal wire are formed in the wiring region, wherein, described the One transmission line and the second transmission line transposition insulator are set, and are respectively positioned on the insulating barrier, first transmission line and institute State the electric connection of the 3rd electrode layer, second transmission line and the first electrode layer are electrically connected with, the 3rd transmission line with The first transmission line parallel insulation is set, and the 3rd transmission line passes through the insulating barrier and the n type semiconductor layer Europe Nurse contacts, and the connection metal wire connects the second electrode lay and the transparency conducting layer.
- 10. array substrate manufacturing method according to claim 9, it is characterised in that described to be formed on the switch region First electrode layer, the second electrode lay and the 3rd electrode layer of mutually insulated, the first electrode layer, the second electrode lay with The second film layer Ohmic contact, the 3rd electrode layer is insulated with second film layer or Schottky contacts, specifically includes：By chemical etching or dry etching mode, in the insulating barrier upper shed of the switch region, first electrode to be formed is made Layer region, the second electrode lay region to be formed and the 3rd electrode layer region to be formed；The first metal is deposited in the first electrode layer region to be formed and the second electrode lay region to be formed, is formed respectively The first electrode layer and the second electrode lay of mutually insulated, the first electrode layer, the second electrode lay with second film Layer Ohmic contact；The second metal is deposited in the 3rd electrode layer region to be formed, forms the 3rd electrode layer, the 3rd electrode layer and institute State the second film layer Schottky contacts；OrBy chemical etching or dry etching mode, in the insulating barrier upper shed of the switch region, first electrode to be formed is made Layer region and the second electrode lay region to be formed；The first metal is deposited in the first electrode layer region to be formed and the second electrode lay region to be formed, is formed respectively The first electrode layer and the second electrode lay of mutually insulated, the first electrode layer, the second electrode lay with second film Layer Ohmic contact；The second metal is deposited on the insulating barrier, forms the 3rd electrode layer, the 3rd electrode layer and second film layer are exhausted Edge.
- A kind of 11. display panel, it is characterised in that including：Claim 1-5 any one or claim 6-10 are any one Array base palte described in.
- A kind of 12. display device, it is characterised in that including：Display panel described in claim 11.
- 13. display device according to claim 12, it is characterised in that the display device is smart mobile phone, intelligent hand Table, tablet personal computer and wearing electronic product display screen.
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| CN108269757A (en) * | 2018-01-29 | 2018-07-10 | 厦门乾照光电股份有限公司 | Passive type drive array LED display panel and preparation method thereof, display device |
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