CN113644086A - Preparation method of display panel and display panel - Google Patents
Preparation method of display panel and display panel Download PDFInfo
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- CN113644086A CN113644086A CN202111197242.0A CN202111197242A CN113644086A CN 113644086 A CN113644086 A CN 113644086A CN 202111197242 A CN202111197242 A CN 202111197242A CN 113644086 A CN113644086 A CN 113644086A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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Abstract
The application discloses a preparation method of a display panel and the display panel, wherein the preparation method comprises the following steps: epitaxially growing a light emitting array on the transparent substrate; forming a thin film transistor on a side of the light emitting array remote from the transparent substrate; a first substrate is additionally arranged on one side of the thin film transistor, which is far away from the light emitting array, and packaging is carried out by using packaging glue; forming a light-emitting medium layer on one side of the transparent substrate far away from the light-emitting array; the thin film transistor controls the light emitting array to emit light, and the light emitting medium layer receives the light emitted by the light emitting array and generates light of different colors to display. According to the display panel, the light emitting array and the driving array are sequentially formed on the transparent substrate, the light emitting array does not need to be transferred, the preparation time of the display panel is saved, and the production efficiency is improved.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel and a preparation method thereof.
Background
With the improvement of scientific technology and the improvement of living standard, the requirements on the display panel are higher and higher, and in order to meet the advantages of high brightness, low power consumption, high resolution, long service life, high color saturation, wide viewing angle and the like of the display panel, the Mini LED and the Micro LED are successively provided.
Micro LEDs are adopted as an ultimate display technology, and are popular among display technology companies, and a mainstream technical route at present is to miniaturize and transfer LEDs onto a corresponding control array substrate to realize individual driving and control of each LED so as to achieve a display effect.
Disclosure of Invention
The application aims to provide a display panel and a preparation method thereof, which integrate the preparation of a light emitting array and a driving array together and avoid the problem of spending a large amount of time due to the transfer of the light emitting array.
The application discloses a preparation method of a display panel, which comprises the following steps:
epitaxially growing a light emitting array on a transparent substrate;
forming a driving array with a plurality of thin film transistors on one side of the light emitting array away from the transparent substrate;
a first substrate is additionally arranged on one side of the thin film transistor, which is far away from the light emitting array, and packaging is carried out by using packaging glue; and
forming a light-emitting medium layer on one side of the transparent substrate far away from the light-emitting array;
the thin film transistor of the driving array controls the light emitting array to emit light, and the light emitting medium layer receives the light emitted by the light emitting array and generates light of different colors to display.
Optionally, the step of forming the light emitting array by epitaxial growth on the transparent substrate includes:
epitaxially generating an LED light emitting array on a conductive transparent substrate;
the step of forming the light emitting medium layer on the side of the transparent substrate far away from the light emitting array comprises the following steps:
preparing a light-emitting medium layer by using quantum dots or fluorescent powder light-emitting materials on one side of the transparent substrate, which is far away from the light-emitting array, corresponding to the light-emitting array;
and adding a second substrate on the light-emitting medium layer for packaging.
Optionally, in the step of epitaxially growing the LED light emitting array on the conductive transparent substrate, the LED light emitting array includes a blue LED light emitting array, an ultraviolet LED light emitting array, or a red LED light emitting array.
Optionally, the step of epitaxially growing the LED light emitting array on the conductive transparent substrate includes:
and sequentially epitaxially growing n-type gallium nitride, a gallium nitride/gallium indium nitride active layer and p-type gallium nitride on the conductive transparent substrate, and etching the LED light-emitting array by using plasma.
Optionally, before the step of forming the driving array having the plurality of thin film transistors on the side of the light emitting array away from the transparent substrate, the method includes:
sequentially forming a pixel electrode current diffusion layer, a metal conductive layer and an insulating protection layer on the light emitting array;
and filling the shading heat-conducting glue into the gaps of the adjacent LED light-emitting arrays.
Optionally, in the step of epitaxially growing the LED light emitting array on the conductive transparent substrate, the transparent substrate is made of a silicon carbide material.
The application also discloses a display panel, which comprises a transparent substrate, a light emitting array, a driving array, a first substrate, a packaging layer and a light emitting medium layer; the light emitting array is formed by epitaxial growth from the transparent substrate; the driving array is formed on the light emitting array, and comprises a plurality of thin film transistors; the first substrate is arranged on one side of the thin film transistor far away from the light emitting array; the first substrate encapsulates the driving array through an encapsulation layer; the light-emitting medium layer is arranged on one side of the transparent substrate far away from the light-emitting array; the thin film transistor controls the light emitting array to emit light, and the light emitting medium layer receives the light emitted by the light emitting array and generates light of different colors to display.
Optionally, the light emitting array is an LED light emitting array, the LED light emitting array includes a plurality of light emitting chips arranged in a matrix, and the light emitting chip includes any one of an LED blue light emitting chip, an LED ultraviolet light emitting chip, and an LED red light emitting chip; and a light-emitting medium layer is arranged on one side of the transparent substrate, which is far away from the first substrate, and comprises a red light-emitting medium layer formed by a red quantum light-emitting material or a red fluorescent powder light-emitting material, a green light-emitting medium layer formed by a green quantum light-emitting material or a green fluorescent powder light-emitting material and a blue light-emitting medium layer formed by a blue quantum light-emitting material or a blue fluorescent powder light-emitting material.
Optionally, the LED light emitting array includes a plurality of Micro LEDs, and one Micro LED corresponds to one sub-pixel in the display panel.
Optionally, a light shielding layer is disposed between two adjacent light emitting chips, a pixel electrode current diffusion layer and a metal conductive layer are disposed on one side of each light emitting chip away from the transparent substrate, and the light emitting chips are conducted with the thin film transistor through the pixel electrode current diffusion layer and the metal conductive layer; the display panel further comprises a second substrate and packaging glue, the second substrate is arranged on one side, far away from the transparent substrate, of the light-emitting medium layer, the packaging glue is arranged between the first substrate and the thin film transistor, and the first substrate is a transparent glass substrate.
Compared with the scheme that the light emitting array and the driving array are separately prepared, the light emitting array and the driving array are simultaneously prepared, the light emitting array does not need to be transferred to the driving array again, and the phenomenon that the preparation time of the display panel is greatly increased due to transfer to influence the production efficiency is avoided.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the application, are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application. It is obvious that the drawings in the following description are only some embodiments of the application, and that for a person skilled in the art, other drawings can be derived from them without inventive effort. In the drawings:
fig. 1 is a flowchart of a method for manufacturing a display panel according to a first embodiment of the present disclosure;
fig. 2 is a detailed flowchart of a method for manufacturing a display panel according to a first embodiment of the present application;
fig. 3 is a schematic structural diagram of a first step of a manufacturing process of a display panel according to a first embodiment of the present application;
FIG. 4 is a schematic structural diagram of a second step of a manufacturing process of a display panel according to a first embodiment of the present application;
fig. 5 is a schematic structural diagram of a third step of a manufacturing process of a display panel according to a first embodiment of the present application;
fig. 6 is a schematic structural diagram of a fourth step of a manufacturing process of a display panel according to a first embodiment of the present application;
fig. 7 is a schematic structural diagram of a fifth step of a manufacturing process of a display panel according to a first embodiment of the present application;
fig. 8 is a schematic structural diagram of a sixth step of a manufacturing process of a display panel according to a first embodiment of the present application;
fig. 9 is a schematic structural diagram of a seventh step of a manufacturing process of a display panel according to the first embodiment of the present application;
fig. 10 is a schematic structural diagram of an eighth step of a manufacturing process of a display panel according to the first embodiment of the present application;
fig. 11 is a schematic structural diagram of a ninth step of a manufacturing process of a display panel according to the first embodiment of the present application;
fig. 12 is a schematic structural diagram of a tenth step of a manufacturing process of a display panel according to the first embodiment of the present application;
fig. 13 is a schematic view of a first structure of a display panel according to a second embodiment of the present application.
Wherein, 1, a transparent substrate; 2. a light emitting array; 3. a pixel electrode current diffusion layer; 4. a metal conductive layer; 5. a first insulating protection layer; 7. a source electrode; 6. an active layer; 8. an insulating layer; 9. a gate electrode; 10. a second insulating protective layer; 11. a first substrate; 12. packaging glue; 13. shading heat-conducting glue; 14. a light-emitting medium layer; 15. a light-shielding layer; 16. black shading packaging glue; 17. a second substrate; 20. a display panel; 30. driving the array; 40. and a thin film transistor.
Detailed Description
It is to be understood that the terminology, the specific structural and functional details disclosed herein are for the purpose of describing particular embodiments only, and are representative, but that the present application may be embodied in many alternate forms and should not be construed as limited to only the embodiments set forth herein.
In the description of the present application, the terms "first", "second" are used for descriptive purposes only and are not to be construed as indicating relative importance or as implicitly indicating the number of technical features indicated. Thus, unless otherwise specified, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature; "plurality" means two or more. The terms "comprises" and "comprising," and any variations thereof, are intended to cover a non-exclusive inclusion, such that one or more other features, integers, steps, operations, elements, components, and/or combinations thereof may be present or added.
Further, terms of orientation or positional relationship indicated by "center", "lateral", "upper", "lower", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, are described based on the orientation or relative positional relationship shown in the drawings, are simply for convenience of description of the present application, and do not indicate that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application.
Furthermore, unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly and may include, for example, fixed connections, removable connections, and integral connections; can be mechanically or electrically connected; either directly or indirectly through intervening media, or through both elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
The present application will now be described in detail with reference to the drawings and alternative embodiments, it being understood that any combination of the various embodiments or technical features described below may form new embodiments without conflict.
Example one
As shown in fig. 1, a method for manufacturing a display panel is disclosed, which comprises the steps of:
s1: epitaxially growing a light emitting array on a transparent substrate;
s2: forming a driving array with a plurality of thin film transistors on one side of the light emitting array away from the transparent substrate;
s3: a first substrate is additionally arranged on one side of the thin film transistor, which is far away from the light emitting array, and packaging is carried out by using packaging glue; and
s4: and forming a light-emitting medium layer on one side of the transparent substrate far away from the light-emitting array.
In the process of forming the light emitting array by epitaxial growth on the transparent substrate, the light emitting array is uniformly subjected to epitaxial growth on the transparent substrate, so that the light emitting array is ensured to have a good light emitting effect; the light emitting medium layer can also be a light conversion medium layer, and can generate light with different colors after being stimulated by the light emitted by the light emitting array; specifically, the thin film transistor of the driving array controls the light emitting array to emit light, the light emitting medium layer receives the light emitted by the light emitting array and generates light with different colors to display, the light emitting array and the driving array are prepared together, and the light emitting array and the driving array are prevented from being prepared separately and then transferred again.
Further, as shown in fig. 2, the step S1 of forming the light emitting array by epitaxial growth on the transparent substrate includes:
s11: epitaxially generating an LED light emitting array on a conductive transparent substrate;
step S4 includes:
s41: preparing a light-emitting medium layer by using quantum dots or fluorescent powder light-emitting materials on one side of the transparent substrate, which is far away from the light-emitting array, corresponding to the light-emitting array;
s42: and adding a second substrate on the light-emitting medium layer for packaging.
In selecting the conductive transparent substrate, the conductive transparent substrate should satisfy the following conditions: a. the conductive performance is good; b. the light transmittance is good; c. capable of epitaxial growth of the LED; epitaxially growing on the conductive transparent substrate, forming an LED light emitting array on the substrate by processes of light masking, etching, thin film deposition and the like, preparing a TFT thin film transistor control array on the formed LED light emitting array, and packaging; and mainly preparing a light-emitting medium layer on the other side of the transparent conductive substrate in an opposite position, wherein the light-emitting medium layer comprises but is not limited to fluorescent powder or quantum dot light-emitting materials (nanocrystalline), and the common LED light-emitting array is a Mini LED light-emitting array or a Micro LED light-emitting array, which is certainly not limited to the two light-emitting arrays.
It should be noted that, in the step of epitaxially generating the LED light emitting array on the conductive transparent substrate, the LED light emitting array includes a blue LED light emitting array, an ultraviolet LED light emitting array, or a red LED light emitting array, and the light emitting array of one color may be selected when the light emitting array is prepared.
On the basis of fig. 1 and fig. 2, further explaining the detailed preparation process of the display panel, the Micro LED light emitting array of this embodiment adopts a blue light gallium nitride LED vertical structure (the Micro LED light emitting array of the present invention is not limited to only blue light gallium nitride LEDs (GaN-LEDs), but also includes ultraviolet light (UV), red light, and the like LED light emitting arrays), and the TFT Thin Film Transistor control array adopts an Indium gallium zinc oxide Thin Film Transistor (IGZO TFT) structure (the TFT Thin Film Transistor control array of the present invention is not limited to only IGZO TFTs, but also includes amorphous silicon Thin Film transistors, low temperature polysilicon Thin Film transistors, complementary metal oxide semiconductor transistors, and the like).
Here, silicon carbide (SiC) is used as a substrate to illustrate an embodiment, and specifically, as shown in fig. 3, n-type gallium nitride (n-GaN), a gallium nitride (GaN)/indium gallium nitride (InGaN) active layer, and p-type gallium nitride (p-GaN) are epitaxially grown on a transparent substrate 1 in sequence, and a Micro LED array is etched by plasma.
As shown in fig. 4, on the basis of the structure in fig. 3, a pixel electrode (ITO) current diffusion layer 3, a metal conductive layer 4, and a relevant material of an insulating protection layer are deposited and patterned, and the pixel electrode (ITO) current diffusion layer 3, the metal conductive layer 4, and a first insulating protection layer 5 are sequentially formed, so as to form the structure shown in fig. 4.
As shown in fig. 5, on the basis of the structure shown in fig. 4, the light-shielding heat-conducting adhesive 13 is filled in the Micro LED array gap, the light-shielding heat-conducting adhesive 13 can perform the functions of heat conduction and heat dissipation, so that the light emission of each Micro LED is independent and independent, and the light emission of each Micro LED is not influenced, and the light-shielding heat-conducting adhesive can be a mixture of black dye, photosensitive glue and heat-conducting silica gel (the light-shielding heat-conducting adhesive is not limited thereto).
As shown in fig. 6, on the basis of the structure of fig. 5, a metal film is deposited and patterned to form a source electrode 7 and a drain electrode of a TFT control array.
As shown in fig. 7, an active layer thin film is deposited on the basis of the structure of fig. 6, and an active layer 6 is formed after patterning.
As shown in fig. 8, on the basis of the structure of fig. 7, an insulating layer film is deposited and patterned to form an insulating layer 8.
As shown in fig. 9, on the basis of the structure of fig. 8, a metal film is deposited and patterned to form a gate electrode 9 of the TFT thin film transistor control array.
As shown in fig. 10, on the basis of the structure of fig. 9, an insulating protection layer film is deposited and patterned to form a second insulating protection layer 10 in fig. 8.
As shown in fig. 11, on the basis of the structure of fig. 10, the TFT thin film transistor control array is packaged by using the first substrate 11 and the packaging adhesive 12.
As shown in fig. 12, on the basis of the structure of fig. 11, the transparent substrate 1 is thinned, a light emitting medium layer 14 is formed on the upper surface of the substrate, the light emitting medium layer includes RGB quantum dots or RGB fluorescent powders, each light emitting unit is separated by a light shielding layer 15 in the middle, and the RGB photoluminescence display units are packaged in a manner of a second substrate 17 and black light shielding packaging glue 16; wherein the first substrate is a transparent glass substrate.
The transparent substrate 1 is the cathode of the light emitting array 2; the source electrode 7, the pixel electrode (ITO) current diffusion layer 3 connected with the drain electrode and the metal conducting layer 4 are used as the anode of the light emitting array 2 and controlled by the TFT below, when the grid 9 is opened, the active layer 6 is conducted, the source electrode 7 inputs voltage to the drain electrode, the pixel electrode current diffusion layer 3 provides anode voltage for the light emitting array 2, electrons enter the light emitting medium layer through the conductive transparent substrate 1, and the light emitting medium layer is promoted to emit light after the electrons are compounded.
Example two
As shown in fig. 13, a display panel 20 is disclosed, the display panel 20 including a transparent substrate 1, a light emitting array 2, a driving array 30, a first substrate 11, and an encapsulation adhesive 12; the light emitting array 2 is formed by epitaxial growth from the transparent substrate 1; the driving array 30 is formed on the light emitting array 2, and the driving array 30 includes a plurality of thin film transistors 40; the first substrate 11 is arranged on one side of the thin film transistor 40 far away from the light emitting array; the first substrate 11 encapsulates the driving array 30 through an encapsulation adhesive 12; wherein, the thin film transistor 40 controls the light emitting array 2 to emit light.
Epitaxial growth forms luminous array 2 on transparent substrate 1, forms drive array 30 on the luminous array 2, the thin film transistor 40 control of drive array 30 luminous array 2 sends out light, prepares luminous array 2 and drive array 30 together, avoids transferring again after independently preparing.
Further, referring to fig. 12, fig. 12 is a schematic diagram of a tenth structure of a manufacturing process of a display panel, which is also a further refinement of the first structure corresponding to fig. 13, where the light emitting array 2 is an LED light emitting array, the LED light emitting array includes a plurality of light emitting chips arranged in a matrix, and the light emitting chip includes any one of an LED blue light emitting chip, an LED ultraviolet light emitting chip, and an LED red light emitting chip; the LED light-emitting array comprises a plurality of Micro LEDs, one Micro LED corresponds to one sub-pixel in the display panel, and an RGB light-emitting combination formed by three Micro LEDs corresponds to one pixel of the display panel; the Micro LED array is formed by epitaxially growing n-type gallium nitride, a gallium nitride/gallium indium nitride active layer and p-type gallium nitride on a conductive silicon carbide transparent substrate through plasma etching, the preparation of the Micro LED array and the preparation of the TFT array are integrated, the huge transfer of the Micro LED is avoided, and a new direction of a Micro LED display technology is developed.
Further, the Micro LED light emitting array adopts a blue light GaN-LED vertical structure (the Micro LED light emitting array indicated by the present invention is not limited to blue light GaN-LEDs, but also includes Ultraviolet (UV), red light, and the like LED light emitting arrays), specifically, a light emitting medium layer is disposed on one side of the transparent substrate away from the first substrate, the light emitting medium layer includes but is not limited to fluorescent powder or quantum dot light emitting material (nanocrystal), specifically includes a red light emitting medium layer formed by red quantum light emitting material or red fluorescent powder light emitting material, a green light emitting medium layer formed by green quantum light emitting material or green fluorescent powder light emitting material, and a blue light emitting medium layer formed by blue quantum light emitting material or blue fluorescent powder light emitting material, each red sub-pixel in the red light emitting medium layer, the green light emitting medium layer, and the blue light emitting medium layer corresponds to one red light Micro LED, each green sub-pixel corresponds to a green light emitting Micro LED, and each blue sub-pixel corresponds to a blue light emitting Micro LED.
A light shielding layer 15 is arranged between two adjacent light emitting chips, the light shielding layer is black light shielding glue, a pixel electrode current diffusion layer 3 and a metal conducting layer 4 are arranged on one side, away from the transparent substrate 1, of each light emitting chip, the pixel electrode current diffusion layer 3 can enable electrons to be better diffused into the light emitting array 2, and therefore a better light emitting effect is achieved, and the light emitting chips are conducted with the thin film transistor 40 through the pixel electrode current diffusion layer 3 and the metal conducting layer 4; the display panel further includes a second substrate 17 and a packaging adhesive 12, the second substrate 17 is disposed on a side of the light-emitting medium layer 14 away from the transparent substrate, the packaging adhesive is disposed between the first substrate 11 and the thin film transistor 40, the first substrate 11 is a transparent glass substrate, and a black light-shielding packaging adhesive 16 is disposed at an edge of the driving chip to prevent light leakage at the edge.
Epitaxially growing a Micro LED light emitting array by using a transparent conductive substrate; the TFT driving array is prepared on the Micro LED light emitting array in epitaxial growth in a continuous preparation mode, so that huge transfer of the Micro LEDs is avoided, and meanwhile, colored display is realized in a mode of adopting a monochromatic Micro LED light emitting array and a light emitting medium.
EXAMPLE III
A display device is disclosed, the display device comprising the display panel as described in any of the above embodiments and a driving circuit for driving the display panel.
It should be noted that, the limitations of each step in the present disclosure are not considered to limit the order of the steps without affecting the implementation of the specific embodiments, and the steps written in the foregoing may be executed first, or executed later, or even executed simultaneously, and as long as the present disclosure can be implemented, all the steps should be considered as belonging to the protection scope of the present application.
It should be noted that the inventive concept of the present application can form many embodiments, but the present application has a limited space and cannot be listed one by one, so that, on the premise of no conflict, any combination between the above-described embodiments or technical features can form a new embodiment, and after the embodiments or technical features are combined, the original technical effect will be enhanced.
The foregoing is a more detailed description of the present application in connection with specific alternative embodiments, and the specific implementations of the present application are not to be considered limited to these descriptions. For those skilled in the art to which the present application pertains, several simple deductions or substitutions may be made without departing from the concept of the present application, and all should be considered as belonging to the protection scope of the present application.
Claims (10)
1. A method for manufacturing a display panel, comprising the steps of:
epitaxially growing a light emitting array on a transparent substrate;
forming a driving array with a plurality of thin film transistors on one side of the light emitting array away from the transparent substrate;
a first substrate is additionally arranged on one side of the thin film transistor, which is far away from the light emitting array, and packaging is carried out by using packaging glue; and
forming a light-emitting medium layer on one side of the transparent substrate far away from the light-emitting array;
the thin film transistor of the driving array controls the light emitting array to emit light, and the light emitting medium layer receives the light emitted by the light emitting array and generates light of different colors to display.
2. The method of manufacturing a display panel according to claim 1, wherein the step of epitaxially growing on the transparent substrate to form the light emitting array comprises:
epitaxially generating an LED light emitting array on a conductive transparent substrate;
the step of forming the light emitting medium layer on the side of the transparent substrate far away from the light emitting array comprises the following steps:
preparing a light-emitting medium layer by using quantum dots or fluorescent powder light-emitting materials on one side of the transparent substrate, which is far away from the light-emitting array, corresponding to the light-emitting array;
and adding a second substrate on the light-emitting medium layer for packaging.
3. The method of claim 2, wherein in the step of epitaxially growing the LED light emitting array on the conductive transparent substrate, the LED light emitting array comprises a blue LED light emitting array, an ultraviolet LED light emitting array, or a red LED light emitting array.
4. The method of claim 2, wherein the step of epitaxially growing an LED light emitting array on a conductive transparent substrate comprises:
and sequentially epitaxially growing n-type gallium nitride, a gallium nitride/gallium indium nitride active layer and p-type gallium nitride on the conductive transparent substrate, and etching the LED light-emitting array by using plasma.
5. The method of manufacturing a display panel according to claim 4, wherein the step of forming the driving array having the plurality of thin film transistors on the side of the light emitting array away from the transparent substrate comprises, before the step of:
sequentially forming a pixel electrode current diffusion layer, a metal conductive layer and an insulating protection layer on the light emitting array;
and filling the shading heat-conducting glue into the gaps of the adjacent LED light-emitting arrays.
6. The method for manufacturing a display panel according to claim 2, wherein in the step of epitaxially growing the LED light emitting array on the conductive transparent substrate, the transparent substrate is made of a silicon carbide material.
7. A display panel, comprising:
a transparent substrate;
a light emitting array epitaxially grown from the transparent substrate;
a driving array formed on the light emitting array, including a plurality of thin film transistors;
the first substrate is arranged on one side, far away from the light emitting array, of the thin film transistor;
the first substrate encapsulates the driving array through an encapsulation layer; and
the light-emitting medium layer is arranged on one side of the transparent substrate far away from the light-emitting array;
the thin film transistor controls the light emitting array to emit light, and the light emitting medium layer receives the light emitted by the light emitting array and generates light of different colors to display.
8. The display panel according to claim 7, wherein the light emitting array is an LED light emitting array including a plurality of light emitting chips arranged in a matrix, the light emitting chips including any one of an LED blue light emitting chip, an LED ultraviolet light emitting chip, and an LED red light emitting chip;
and a light-emitting medium layer is arranged on one side of the transparent substrate, which is far away from the first substrate, and comprises a red light-emitting medium layer formed by a red quantum light-emitting material or a red fluorescent powder light-emitting material, a green light-emitting medium layer formed by a green quantum light-emitting material or a green fluorescent powder light-emitting material and a blue light-emitting medium layer formed by a blue quantum light-emitting material or a blue fluorescent powder light-emitting material.
9. The display panel of claim 8, wherein the LED light emitting array comprises a plurality of Micro LEDs, one corresponding to each sub-pixel in the display panel.
10. The display panel according to claim 8, wherein a light shielding layer is disposed between two adjacent light emitting chips, a pixel electrode current diffusion layer and a metal conductive layer are disposed on a side of the light emitting chips away from the transparent substrate, and the light emitting chips are turned on with the thin film transistor through the pixel electrode current diffusion layer and the metal conductive layer;
the display panel further comprises a second substrate and packaging glue, the second substrate is arranged on one side, far away from the transparent substrate, of the light-emitting medium layer, the packaging glue is arranged between the first substrate and the thin film transistor, and the first substrate is a transparent glass substrate.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN202111197242.0A CN113644086B (en) | 2021-10-14 | 2021-10-14 | Preparation method of display panel and display panel |
| PCT/CN2022/117540 WO2023061109A1 (en) | 2021-10-14 | 2022-09-07 | Method for preparing display panel, display panel, and display device |
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| CN202111197242.0A CN113644086B (en) | 2021-10-14 | 2021-10-14 | Preparation method of display panel and display panel |
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| CN113644086B CN113644086B (en) | 2022-02-18 |
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| CN114256391A (en) * | 2021-12-22 | 2022-03-29 | 深圳市思坦科技有限公司 | Manufacturing method of display substrate, display substrate and display device |
| CN114446177A (en) * | 2022-02-15 | 2022-05-06 | 珠海华萃科技有限公司 | Soft film display screen, display and display screen manufacturing process |
| CN114709302A (en) * | 2022-03-24 | 2022-07-05 | Tcl华星光电技术有限公司 | Packaging method and packaging structure of Micro-LED display panel and display device |
| CN114975404A (en) * | 2022-05-26 | 2022-08-30 | Tcl华星光电技术有限公司 | Display panel |
| WO2023061109A1 (en) * | 2021-10-14 | 2023-04-20 | 惠科股份有限公司 | Method for preparing display panel, display panel, and display device |
| WO2024001085A1 (en) * | 2022-06-29 | 2024-01-04 | 上海闻泰电子科技有限公司 | Display screen, preparation method therefor, and display apparatus |
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| CN113644086B (en) * | 2021-10-14 | 2022-02-18 | 惠科股份有限公司 | Preparation method of display panel and display panel |
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| CN105742307A (en) * | 2016-04-26 | 2016-07-06 | 张希娟 | Color micro display device and preparation method thereof |
| CN108735865A (en) * | 2018-05-26 | 2018-11-02 | 矽照光电（厦门）有限公司 | A kind of display structure production method |
| US20210126154A1 (en) * | 2019-10-23 | 2021-04-29 | Samsung Electronics Co., Ltd. | Display device and method of fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2023061109A1 (en) * | 2021-10-14 | 2023-04-20 | 惠科股份有限公司 | Method for preparing display panel, display panel, and display device |
| CN114256391A (en) * | 2021-12-22 | 2022-03-29 | 深圳市思坦科技有限公司 | Manufacturing method of display substrate, display substrate and display device |
| CN114446177A (en) * | 2022-02-15 | 2022-05-06 | 珠海华萃科技有限公司 | Soft film display screen, display and display screen manufacturing process |
| CN114446177B (en) * | 2022-02-15 | 2022-09-13 | 珠海华萃科技有限公司 | Soft film display screen, display and display screen manufacturing process |
| CN114709302A (en) * | 2022-03-24 | 2022-07-05 | Tcl华星光电技术有限公司 | Packaging method and packaging structure of Micro-LED display panel and display device |
| CN114975404A (en) * | 2022-05-26 | 2022-08-30 | Tcl华星光电技术有限公司 | Display panel |
| CN114975404B (en) * | 2022-05-26 | 2024-07-23 | Tcl华星光电技术有限公司 | Display panel |
| WO2024001085A1 (en) * | 2022-06-29 | 2024-01-04 | 上海闻泰电子科技有限公司 | Display screen, preparation method therefor, and display apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113644086B (en) | 2022-02-18 |
| WO2023061109A1 (en) | 2023-04-20 |
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