CN107546199A - 功率模块及制造其的方法 - Google Patents

功率模块及制造其的方法 Download PDF

Info

Publication number
CN107546199A
CN107546199A CN201611007190.5A CN201611007190A CN107546199A CN 107546199 A CN107546199 A CN 107546199A CN 201611007190 A CN201611007190 A CN 201611007190A CN 107546199 A CN107546199 A CN 107546199A
Authority
CN
China
Prior art keywords
metal pattern
lead
substrate
dielectric film
power model
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201611007190.5A
Other languages
English (en)
Inventor
孙正敏
朴圣源
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hyundai Motor Co
Original Assignee
Hyundai Motor Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Motor Co filed Critical Hyundai Motor Co
Publication of CN107546199A publication Critical patent/CN107546199A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H05K1/0203—Cooling of mounted components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04034—Bonding areas specifically adapted for strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/40137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/40139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous strap daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/40247—Connecting the strap to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73263—Layer and strap connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/83801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/84909—Post-treatment of the connector or bonding area
    • H01L2224/8492—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92246—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10742—Details of leads
    • H05K2201/10886—Other details
    • H05K2201/10931—Exposed leads, i.e. encapsulation of component partly removed for exposing a part of lead, e.g. for soldering purposes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10977—Encapsulated connections

Abstract

本发明提供了一种功率模块。功率模块包括基板，设置在基板上的功率转换芯片，以及在其中功率转换芯片设置在基板上的结构上形成的绝缘膜。另外，功率模块包括包封涂覆有绝缘膜的结构的金属模。另外，与传统的功率模块相比，功率模块提供了简化的结构和改进的散热性能。

Description

功率模块及制造其的方法
技术领域
本发明涉及功率模块及制造其的方法，更具体地，涉及具有简化的结构和改进的散热性能的功率模块及制造其的方法。
背景技术
包括在混合动力车辆或电动车辆中的功率转换器或功率逆变器是环境友好车辆的重要部分。近来，已经开发了关于功率转换器的各种技术。功率模块通常是功率转换器的最昂贵的部分，并且是在环境友好车辆中使用的所需技术。功率模块开发已经集中在降低的生产成本和改进的冷却性能。例如，通过改进功率模块的冷却性能，降低了功率半导体器件的额定电流和芯片尺寸，这导致功率模块的成本降低和更稳定的操作。
常规地，功率模块包括已经生产的应用单面冷却或双面冷却的结构。另外，常规的功率模块具有向基板提供冷却水通道的结构。因此，冷却仅仅从功率模块的外表面发生，并且难以消散功率模块的内部中的热量。具体地，由于作为发热元件的功率模块的功率转换芯片是用环氧型或凝胶型密封剂模制的，所以由于密封剂而提高了耐热性。因此，功率模块具有低的散热性能。此外，当注入密封剂时，并且导线之间的加压短路或导线的断开形成时，功率转换芯片之间或功率转换芯片和引线之间的电连接可能发生。
前述内容仅仅旨在帮助理解本发明的背景，并不旨在意味着本发明落入本领域技术人员已知的现有技术的范围内。
发明内容
因此，本发明提供了一种具有简化的结构和改进的散热性能的功率模块及制造其的方法。在本发明的一个方面中，功率模块可包括基板；设置在基板上的功率转换芯片；在功率转换芯片设置在基板上的结构上形成绝缘膜；以及包封涂覆有绝缘膜的结构的金属模。
功率模块可还包括从金属模的内部延伸到外部的引线，以及电连接在功率转换芯片的端子和引线之间的导线。绝缘膜形成在引线的外表面和导线的外表面上。绝缘膜可形成以覆盖设置在金属模的内部中引线的外表面，并且设置在金属模的外部的引线的外表面的一部分保持未被覆盖的。基板可以是金属基板。金属模的外表面可具有设置在其上的散热翅片。
根据另一个方面，一种制造功率模块的方法可包括将功率转换芯片设置在基板上，使绝缘膜形成在功率转换芯片设置在基板上的结构的外表面上，以及通过模制工艺形成金属模(mold)，从而覆盖涂覆有绝缘膜的结构。方法可还包括在形成绝缘膜之前围绕结构设置引线，以及在形成绝缘膜之前，经由导线将功率转换芯片的端子连接到引线，其中结构可还包括引线和导线。
通过将结构暴露于液化的绝缘材料，可形成绝缘膜。可形成金属模，其具有引线的一部分的外表面的一部分，其保持未被覆盖，以允许引线的至少一部分暴露于金属模的外部。方法可还包括在形成金属模之后，移除在金属模的外部设置的引线的暴露部分的外表面上形成的绝缘膜的一部分。金属模可通过铸造工艺形成。例如，形成金属模可包括形成从金属模的外表面突出的散热翅片。
根据本发明的功率模块及制造其的方法可不包括通常用于常规功率模块的环氧型或凝胶型密封剂。因此，可降低功率模块的生产成本。另外，由于可以去除传统上归因于具有差的导热性的密封剂的高耐热性区域，所以可以改进功率模块的冷却性能。根据本发明的功率模块及制造其的方法，当使用具有良好导热性的金属基板代替诸如活性金属钎焊(AMB)基板或直接键合铜(DBC)基板的绝缘基板时，可改进散热性能，可降低原材料成本，并且可改进质量控制和管理。
另外，根据功率模块及制造其的方法，由于可以更容易地形成具有复杂形式的金属模块，可形成在其外表面上设置有散热片的金属模块，并且可显著地改进散热性能。此外，根据本发明的功率模块及制造其的方法，可包括金属模式的前表面、后表面、左表面和右表面以及上表面和下表面的侧表面可用于热耗散。因此，与从其一个或两个表面散热的常规功率模块相比，可以改进散热性能。
附图说明
当结合附图时，根据下面的详细说明书，本发明的上述和其它目标、特征和其它优点将更容易理解，其中：
图1是示出根据本发明的示例性实施例的功率模块的示例性剖视图；
图2到图6是示出制造根据本发明的示例性实施例的功率模块的顺序过程步骤的示例性剖视图；以及
图7是示出根据本发明的示例性实施例的修改的功率模块的示例性剖视图。
具体实施方式
在下文中，将参考附图描述根据本发明的一个示例性实施例的功率模块及制造其的方法，以允许本领域技术人员容易地实施本发明。参考下面结合附图的示例性实施例的详细说明书将清楚地理解本发明的优点和特征以及用于其的方法。然而，本发明不限于本文公开的示例性实施例，而是可以各种不同的形式实现。给出示例性实施例是为了使本发明的公开充分，并且向本领域技术人员完全地指示本发明的范围，并且本发明应当由权利要求的范围限定。
在本文所用的术语仅是为了描述具体实施例，而并非旨在限制本公开。如本文所使用的,除非上下文清楚地指出了其它情况，单数形式“一种/个(a)”、“一种/个(an)”以及“该”旨在包括复数形式。还应当理解，当术语“包括了”和/或“包括着”用于本说明书中时，其指定所述特征、整数、步骤、操作、元件和/或部件的存在，但并不排除一个或多个其它特征、整数、步骤、操作、元件、部件和/或其组合的存在或加入。如本文所用的，术语“和/或”包括相关的所列项目的一个或多个的任何和所有组合。例如，为了使本发明的描述清楚，未示出不相关的部分，并且为了清楚起见，夸大了层和区域的厚度。此外，当声明层在另一个层或基板“上”时，层可直接地在另一个层或基板或可以设置在二者之间的第三层上。
应当理解本文使用的术语“车辆”或“车辆的”或其它的类似术语通常包括机动车辆，诸如包括运动型多用途汽车(SUV)、公共汽车、卡车、各种商用车辆的载客汽车，包括各种小船、轮船的水运工具，飞机等等，并且包括混合动力车辆、电动车辆、插电式混合电动车辆、氢动力车辆以及其它替代燃料车辆(例如，来源于除石油之外的资源的燃料)。图1是示出根据本发明的示例性实施例的功率模块的示例性剖视图。如图1中所示，根据本发明的示例性实施例的功率模块可包括基板10，设置在基板10上的功率转换芯片20，在基板10和功率转换芯片20的外表面上形成的绝缘膜50，以及模具(mold)60，其中基板10和涂覆有绝缘膜50的功率转换芯片20可被设置成一起模制。另外，根据示例性实施例的功率模块还可包括从金属模60的内部延伸到外部的引线40，以及将功率转换芯片20的端子电连接到引线40的导线30。
基板10可以是承载设置在其表面上的功率转换芯片20的基座。在常规的功率模块中，活性金属钎焊(AMB)基板或直接键合铜(DBC)基板用于基板10。具体地，示例性实施例可以包括用于基板10的AMB基板或DBC基板。然而，根据另一个示例性实施例，可使用金属基板作为基板10。根据本发明的示例性实施例，基板10可通过下面将描述的绝缘膜50进行电绝缘。具体地，为了确保优异的散热性能，可使用金属基板，其不包含具有劣化的导热性的绝缘部件，诸如陶瓷或FRP。
功率转换芯片20可以是设置在基板10上的电子装置，以使电流能够为了功率转换的目的而流动。功率转换芯片20可以通过半导体工艺制造。例如，功率转换芯片20可包括可以是金属氧化物半导体场效应晶体管(MOSFET)或绝缘栅双极晶体管(IGBT)的开关元件，并且二极管可以耦接到开关元件。功率转换芯片20可以被配置成在短周期内执行快速开关操作，并且可以频繁地传输导致显著的热生成的电流。
功率转换芯片20的上表面和下表面可包括用于电连接的端子。例如，如图1中所示，当功率转换芯片通过焊接接合或烧结接合等电连接到基板10时，可形成在功率转换芯片20的下表面上形成的端子(未示出)。如图1中所示，粘合剂101可用来将功率转换芯片20的下端子附接到基板10。根据示例性实施例，当基板10是金属基板时，两个功率转换芯片20的下端子可直接接合到金属基板，并且两个功率转换芯片20可经由金属基板电连接到彼此。绝缘膜50可在其上设置有功率转换芯片20的基板10的结构的外表面上形成。由于在其上设置有功率转换芯片20的基板的结构的表面上形成的绝缘膜50，结构可以与外部环境电绝缘。
根据示例性实施例，功率模块还可以包括引线40和导线30。引线40可以是将电源模块电连接到外部装置的元件。引线40可以是金属板或金属条或类似的连接配置。引线40可被设置成从金属模60的内部延伸到外部。具体地，在金属模60内，引线40可经由导线30电连接到功率转换芯片20。导线30可以是设置在附接到基板10的功率转换芯片20的表面上形成的端子之间的用于电连接的元件，或者可以设置在功率转换芯片20和引线40之间。导线30可由诸如接合线或导电条的导电材料形成，并且可采取各种形式。
当引线40电连接到导线30时，引线40和导线30的外表面可以被绝缘膜覆盖。换句话说，当作为功率模块的元件的基板10、功率转换芯片20、导线30和引线40可以电连接到彼此，并且由于绝缘膜50可与外部装置电绝缘。包封基板10和功率转换芯片20的金属模60可用绝缘膜50覆盖，并且可允许将基板10和功率转换芯片20模制成一体的模制产品。金属模60可以是导电构件，但是由于绝缘膜50可与设置在其内部中的电子部件电绝缘。金属模60可被形成以容纳导线30和导线40的一部分，其可用其中的绝缘膜50覆盖。具体地，由于绝缘膜50，导线30和引线40可与金属模60电绝缘。金属模60可由单组分金属(例如，或其类似的合金)形成。
根据示例性实施例，金属模60可被形成，以覆盖引线40的一部分，例如，接触部分可以设置在导线30和引线40之间。引线40的剩余部分可以设置在金属模60的外部。设置在金属模60外部的引线40的暴露部分的至少一部分可不被绝缘膜50覆盖，以允许功率模块通过未被绝缘膜50覆盖的部分电连接到外部装置。换句话说，根据示例性实施例，可以从工艺中去除常规用来封装功率模块的环氧型或凝胶型密封剂。因此，可降低功率模块的材料成本。此外，根据示例性实施例的功率模块不具有归因于具有功率导热性的密封剂的高耐热性区域，因此，功率模块可具有改进的冷却性能。根据示例性实施例，当使用金属基板代替AMB基板或DBC基板时，可增加传热性，可以降低材料成本，并且可改进质量控制和管理。
将描述根据本发明的另一个示例性实施例的制造功率模块的方法。图2到图5是示出制造根据本发明的示例性实施例的功率模块的顺序过程步骤的示例性剖视图。根据示例性实施例的制造功率模块的方法可包括将功率转换芯片20设置在基板10上，如图2中所示。如上面已经描述的，功率转换芯片20可以通过焊接接合或烧结接合等电连接到并物理耦接到基板10。
如图3中所示，将功率模块电连接到外部装置的引线40可以设置在基板10的周边部分，功率转换芯片20可设置在其上。功率转换芯片20和引线40可以经由导线30电连接到彼此。根据图3中示出的示例，导线30可被形成以将多个功率转换芯片20耦接到彼此，并且将附加的功率转换芯片20耦接到引线40。然而，导线30可被设置以将功率转换芯片20连接到彼此，或者可将一个功率转换芯片连接到多个引线。
如图4中所示，绝缘膜50可被形成在结构的外表面上，其中作为功率模块的元件的基板10、功率转换芯片20、导线30和引线40被设置并且耦接到彼此。图4中示出的绝缘膜50的形成可包括在液化的绝缘材料中暴露基板的表面，结构可包括作为功率模块的元件的基板10、功率转换芯片20、导线30和引线40，并且确保结构的元件被正确地布置和连接，以使液体绝缘材料能够被吸附到结构的表面。当必要时，可执行干法工艺(dry process)或中间工艺(intermediate process)，以使绝缘材料能够在结构的表面上以均匀的厚度涂覆。
如图5中所示，可以形成金属模以包封涂覆有绝缘膜50的结构。金属模60可通过铸造工艺形成。金属模60可形成为与在基板10的外表面上的绝缘膜50的表面、功率转换芯片20、导线30和引线40接触。另外，如图6中所示，金属模60可被形成为使引线40的一部分暴露到外部，以使引线40随后能够电连接到外部装置。
最后，可以部分地移除覆盖设置在金属模60外部的引线40的一部分的绝缘膜。另外，可完全地形成图1中示出的功率模具。可以从其移除绝缘膜的引线40的部分可以用作在电连接到外部装置时的接触区域。由于金属模60可以通过铸造工艺制造，所以可以使用在铸造工艺中具有不同形式的模具来制造各种形式的金属模60。例如，当从金属模60的表面辐射热量以改进散热能力时，金属模60可包括针状翅片区域。换句话说，金属模6的外表面可以包括设置在其上的针状翅片。具体地，在铸造工艺中可使用具有针状翅片的模具,以产生具有翅片的金属模。
图7中示出具有翅片的金属模的示例。图7是示出根据本发明的示例性实施例的修改的功率模块的示例性剖视图。根据图7中示出的修改，金属模60可包括设置在其表面上的散热翅片61，以增加散热的面积，并且改进散热性能。但是，通过采用金属模，没有装备散热片的图1的功率模块与常规的功率模块相比，具有改进的散热性能。此外，由于各种类型的冷却装置可设置在可包括功率模块的侧表面以及上表面和下表面的其它表面上，所以与从其一个或两个表面散热的传统的功率模块相比，功率模块可以具有改进的散热性能。
尽管为了说明的目的已经描述了本发明的示例性实施例，但是本领域技术人员将理解，在不偏离随附权利要求中公开的本发明的范围和精神的情况下，各种修改、添加和替换是可能的。

Claims (13)

1.一种功率模块，其包括：
基板；
功率转换芯片，其被设置在所述基板上；
绝缘膜，其在设置有所述功率转换芯片和所述基板的结构上形成；以及
金属模，其包封涂覆有所述绝缘膜的所述结构。
2.根据权利要求1所述的功率模块，其还包括：
引线，其从所述金属模的内部延伸到外部；以及
导线，其电连接在所述功率转换芯片的端子和所述引线之间。
3.根据权利要求2所述的功率模块，其中所述绝缘膜形成在所述引线的外表面和所述导线的外表面上。
4.根据权利要求3所述的功率模块，其中所述绝缘膜形成为覆盖设置在所述金属模的内部中的所述引线的外表面，并且设置在所述金属模的外部的所述引线的外表面的一部分保持未被所述绝缘膜覆盖。
5.根据权利要求1所述的功率模块，其中所述基板是金属基板。
6.根据权利要求1所述的功率模块，其中所述散热翅片设置在所述金属模的外表面上。
7.一种制造功率模块的方法，其包括以下步骤：
将功率转换芯片设置在基板上；
使绝缘膜形成在设置有所述功率转换芯片和所述基板的结构上；以及
通过模制工艺形成金属模，从而覆盖涂覆有所述绝缘膜的所述结构。
8.根据权利要求7所述的方法，其还包括以下步骤：
在形成所述绝缘膜之前，围绕所述结构设置引线；以及
在形成所述绝缘膜之前，经由导线将所述功率转换芯片的端子连接到所述引线，
其中所述结构还包括所述引线和所述导线。
9.根据权利要求7所述的方法，其中形成所述绝缘膜的步骤包括：
将所述结构暴露于液化的绝缘材料。
10.根据权利要求9所述的方法，在形成所述金属模的步骤中，所述引线的一部分的外表面的一部分保持未被覆盖，以使所述引线的至少一部分暴露于所述金属模的外部。
11.根据权利要求10所述的方法，其还包括以下步骤：
在形成所述金属模之后，移除在所述金属模的外部设置的所述引线的暴露部分的外表面上形成的所述绝缘膜的一部分。
12.根据权利要求7所述的方法，其中形成所述金属模的步骤包括铸造工艺。
13.根据权利要求7所述的方法，其中形成所述金属模的步骤包括：
形成从所述金属模的外表面突出的散热翅片。
CN201611007190.5A 2016-06-29 2016-11-16 功率模块及制造其的方法 Pending CN107546199A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160081905A KR20180002419A (ko) 2016-06-29 2016-06-29 파워 모듈 및 그 제조 방법
KR10-2016-0081905 2016-06-29

Publications (1)

Publication Number Publication Date
CN107546199A true CN107546199A (zh) 2018-01-05

Family

ID=57226845

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201611007190.5A Pending CN107546199A (zh) 2016-06-29 2016-11-16 功率模块及制造其的方法

Country Status (4)

Country Link
US (1) US20180007777A1 (zh)
EP (1) EP3264454A1 (zh)
KR (1) KR20180002419A (zh)
CN (1) CN107546199A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020215737A1 (zh) * 2019-04-24 2020-10-29 深圳第三代半导体研究院 一种功率器件封装结构及其方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1094755A (zh) * 1955-01-20 1955-05-24
US2903629A (en) * 1958-10-23 1959-09-08 Advanced Res Associates Inc Encapsulated semiconductor assembly
US7445968B2 (en) * 2005-12-16 2008-11-04 Sige Semiconductor (U.S.), Corp. Methods for integrated circuit module packaging and integrated circuit module packages
CN102340233B (zh) * 2010-07-15 2014-05-07 台达电子工业股份有限公司 功率模块
EP2682985B1 (en) * 2011-03-04 2018-10-10 Hitachi Automotive Systems, Ltd. Semiconductor module and semiconductor module manufacturing method
JP5633496B2 (ja) * 2011-09-29 2014-12-03 三菱電機株式会社 半導体装置及びその製造方法
JP5926654B2 (ja) * 2012-08-29 2016-05-25 日立オートモティブシステムズ株式会社 パワー半導体モジュールおよびパワー半導体モジュールの製造方法
US9313897B2 (en) * 2012-09-14 2016-04-12 Infineon Technologies Ag Method for electrophoretically depositing a film on an electronic assembly
EP2960936A4 (en) * 2013-02-22 2016-10-19 Hitachi Ltd RESIN SEALED ELECTRONIC CONTROL DEVICE

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020215737A1 (zh) * 2019-04-24 2020-10-29 深圳第三代半导体研究院 一种功率器件封装结构及其方法

Also Published As

Publication number Publication date
EP3264454A1 (en) 2018-01-03
KR20180002419A (ko) 2018-01-08
US20180007777A1 (en) 2018-01-04

Similar Documents

Publication Publication Date Title
CN105190874B (zh) 半导体模块及半导体装置
CN106463420B (zh) 电力用半导体装置及其制造方法
CN103050470B (zh) 智能功率模块及其制作方法
CN103811430A (zh) 层叠封装结构及其形成方法
CN107210238A (zh) 功率模块
CN104637832B (zh) 半导体装置及其制造方法
JP2009536458A (ja) 半導体モジュール及びその製造方法
CN101675520A (zh) 电力用半导体模块
US20220102249A1 (en) Dual side cooling power module and manufacturing method of the same
CN104795374A (zh) 智能功率模块及其制造方法
CN106601691A (zh) 智能功率模块、智能功率模块的制备方法及电力电子设备
CN203232866U (zh) 智能功率模块
CN105990275B (zh) 功率模块封装件及其制作方法
CN106098919A (zh) 一种高导热高绝缘的led光引擎封装结构及制备方法
CN107546199A (zh) 功率模块及制造其的方法
US7602060B2 (en) Heat spreader in a flip chip package
CN108878377B (zh) 功率模块及其制作方法以及空调器
CN111834346A (zh) 晶体管功率模块封装结构及其封装方法
CN104795378A (zh) 智能功率模块及其制造方法
CN104752373B (zh) 智能功率模块及其制造方法
CN110676237A (zh) 基于微小级别ssop封装的散热智能功率半导体模块及其制备方法与应用
CN204614784U (zh) 半导体器件、智能功率模块和空调器
CN200976345Y (zh) 芯片封装结构
CN114038812A (zh) 半导体电路和半导体电路的制造方法
CN202332797U (zh) 半导体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180105

WD01 Invention patent application deemed withdrawn after publication