CN107541775B - A kind of guiding device for polycrystalline ingot furnace - Google Patents

A kind of guiding device for polycrystalline ingot furnace Download PDF

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Publication number
CN107541775B
CN107541775B CN201710856086.1A CN201710856086A CN107541775B CN 107541775 B CN107541775 B CN 107541775B CN 201710856086 A CN201710856086 A CN 201710856086A CN 107541775 B CN107541775 B CN 107541775B
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carrier gas
liquid
water conservancy
conservancy diversion
guiding device
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CN107541775A (en
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陈鸽
其他发明人请求不公开姓名
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Xuzhou heyday Motor Co., Ltd.
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Xuzhou Heyday Motor Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a kind of guiding devices for polycrystalline ingot furnace, including axially connecting with connect cylinder and guide shell；Described with connect cylinder includes hollow mating canister portion and air inlet platform portion, and the first cushion chamber of setting in the barrel of canister portion with its concentrically lower ending opening of line is coupled, air inlet is arranged in air inlet platform portion, air inlet and the first cushion chamber are connected to；Second cushion chamber that upper surface is open and corresponding with the first cushion chamber is set in the barrel of the guide shell upper end；The water conservancy diversion air flue that setting at least one is extended downwardly from the lower end surface of the second cushion chamber along cylindrical helix in the barrel of the guide shell, the outlet of water conservancy diversion air flue are located at the lower end of guide shell.Guiding device of the present invention, which has, leads to visual field in ingot furnace, and guiding device blows carrier gas dispersedly to penetrate liquid-state silicon, increase the contact surface of carrier gas and liquid-state silicon, reduce the impurity that the supercooling of local caused by carrier gas and carrier gas promote and formed；Rotational flow field is generated in the driving liquid-state silicon of carrier gas simultaneously, promotes impurity volatilization.

Description

A kind of guiding device for polycrystalline ingot furnace
The application is that application No. is 201610082952.1, applying date 2016-02-03, entitled one kind to be used for polycrystalline The divisional application of the guiding device of ingot furnace.
Technical field
The present invention relates to a kind of guiding device more particularly to it is a kind of for polycrystalline ingot furnace to guide carrier gas to flow to Guiding device belongs to crystal growth equipment field.
Background technique
Polycrystalline ingot furnace 10 is mainly by infrared detecting set 16, furnace body 11, guiding device 12, heat-insulation cage 13, heater 14, stone Black platform 15 is constituted, as shown in Figure 1.Guiding device 12 includes graphite-pipe 123, matches connected nut 121 and diversion pipe 122.Diversion pipe 122 upper end is equipped with and with the external screw thread that 121 internal screw thread of connected nut matches, and the upper end of diversion pipe 122 passes through heat-insulation cage Top insulation board in the middle part of through-hole, and fixed with connected nut 121 above the insulation board of top, 122 lower end of diversion pipe passes through graphite shield The through-hole in the middle part of cover board above plate, the silicon material in face crucible.Graphite-pipe 123 is assemblied in the sight with connected nut 121 and furnace roof It examines between hole.The surface of guiding device 12 is arranged in infrared detecting set 16, and the probe of infrared detecting set 16 faces ingot furnace Interior silicon material.Guiding device 12 is mainly used for the delivery of carrier gas into furnace, observes the situation in furnace, and crystal bar measurement crystal is surveyed in insertion The state of silicon material in the speed of growth and infrared detecting set detection furnace.Guiding device 12 is to look into the special silicon material shape of situation in furnace Unique observation approach of condition.The state that infrared detecting set 16 is used to detect silicon material is solid-state or liquid, in automatic long brilliant work During skill, polycrystalline ingot furnace makes the reports such as material is completed, middle minister's crystalline substance is completed according to the variation of the signal of infrared detecting set 16 Alert processing passes through guiding device 12 with alert action personnel in time and confirms the state and long crystalline condition of silicon material, and makes at operation Reason, into the next step process.
The heating method that polycrystalline ingot furnace is heated using four side walls, five face of top surface, as shown in Figure 1.Liquid-state silicon in crucible The temperature of four sides is higher than the temperature at middle part, the liquid-state silicon for forming four sides is floated, the free convection stream that the liquid-state silicon at middle part is sunk ?.Certain impurity (such as carbon, nitrogen) for being melted in the four higher liquid-state silicons of side temperature if melting degree reach or approach saturation, when it When flowing to middle part, since temperature reduces, impurity melting degree supersaturation will lead to the precipitation of the forming cores such as impurity such as carbon, nitrogen；Impurity core with Liquid stream sinking temperature decline and gradually grow form impurity inclusion.As shown in Figure 1, outlet collection of the carrier gas through guiding device 12 In vertically blow to the central area of liquid-state silicon 17, the load volume contacted on the area unit area is big, and carrier gas is from the region liquid The heat taken away in state silicon is more, and the region liquid-state silicon temperature will be caused further to decline, degree of supercooling enhancing, to promote liquid-state silicon In the impurity supersaturation forming core such as impurity such as carbon, nitrogen be precipitated, and impurity core fast-growth is promoted to form macroscopical impurity, such as silicon carbide Impurity, silicon nitride inclusions.Be carbonized silicon impurities have it is electroactive, will affect the transformation efficiency of solar battery.Application number A kind of water conservancy diversion of change carrier gas flow direction is disclosed in the Chinese patent application of 201310564191.X and 201310564069.2 Device, it is therefore an objective to make the volatilization of liquid-state silicon rotation reinforcement impurity in crucible.Guiding device disclosed in two pieces patent application makes Carrier gas obliquely blows to liquid-state silicon, can also reduce the load volume contacted on liquid-state silicon unit area, but there are problems: Carrier gas concentration blows a certain region for penetrating liquid silicon face, still easily causes regional temperature decline liquid-state silicon supercooling, promotes liquid-state silicon Middle impurity forming core growth；The visual field led in ingot furnace in guiding device is blocked completely, by the observation window of furnace roof through leading Stream device can not watch the state in ingot furnace, it has not been convenient to stoker's operation；Ingot furnace can not be inserted into across guiding device by surveying crystal bar Interior, rate of crystalline growth is not capable of measuring；And infrared detecting set can not detect the state of silicon material in furnace, automatic crystal growing technology cannot It is normally carried out.Therefore, it needs to develop a kind of guiding device for polycrystalline ingot furnace for changing carrier gas flow direction, so that carrier gas The different zones in liquid silicon face are dispersedly blown, the flow direction of carrier gas stream is changed, increase the contact of carrier gas stream and liquid silicon face Area, while there is the visual field led in ingot furnace in guiding device.
Summary of the invention
In response to the problems existing in the prior art, the purpose of the present invention is to provide a kind of for polycrystalline ingot furnace to guide The guiding device of carrier gas flow direction.To overcome the problems, such as that the guiding device of the prior art is deposited in the application: carrier gas concentration, which is blown, penetrates liquid The a certain region of state silicon face, carrier gas take away amount of heat from the region, and the region liquid-state silicon local is caused to be subcooled, and promote liquid Impurity forming core is grown in silicon；The visual field led in ingot furnace in guiding device is blocked completely, by observation window through guiding device The state in ingot furnace can not be watched, it has not been convenient to stoker's operation；Surveying crystal bar cannot pass through guiding device and can not be inserted into ingot furnace It is interior, rate of crystalline growth inconvenience measurement；Infrared detecting set can not detect the state of silicon material in furnace, and automatic crystal growing technology cannot be normal It carries out.
A kind of technical solution of the invention is to provide a kind of guiding device for polycrystalline ingot furnace, and designing points exist In: match connect cylinder and guide shell including axial restraint connection；The connect cylinder of matching includes hollow mating canister portion and air inlet platform portion, is matched First cushion chamber of setting and its concentrically lower ending opening of line in the barrel in connect cylinder portion, setting is used for carrier gas stream in air inlet platform portion The air inlet entered passes through connection air flue connection between air inlet and the first cushion chamber；Setting in the barrel of the guide shell upper end With its concentrically line upper surface opening the second cushion chamber, the second cushion chamber and the first cushion chamber are corresponding；The guide shell Barrel in at least one water conservancy diversion air flue that is extended downwardly from the second cushion chamber lower end surface along cylindrical helix of setting, water conservancy diversion gas The outlet in road is located at the lower end of guide shell.
In the application, the upper end of the guide shell of guiding device passes through the through-hole in the middle part of the top insulation board of heat-insulation cage, and sets Axially assembling above the insulation board of top with connect cylinder is set, is connected with guide shell by screw threads for fastening with connect cylinder, fixes guide shell On the insulation board of top.Graphite-pipe is assemblied between the peep hole with connect cylinder and ingot furnace furnace roof, and appendix is arranged in graphite-pipe, Upper end is connected to the air inlet of carrier gas existing on ingot furnace, and lower end is connected to the air inlet of guiding device of the present invention.Water conservancy diversion dress It sets the state that with visual field in ingot furnace is led to, can be watched in ingot furnace by guiding device from the observation window of furnace roof, insert Enter to survey the state for the silicon material that crystal bar, infrared detecting set can be detected normally in ingot furnace, automatic crystal growing technology is gone on smoothly.Water conservancy diversion dress The different zones for blowing carrier gas dispersion obliquely in liquid silicon face are set, the contact area of carrier gas stream and liquid silicon face is increased, The degree of supercooling of the liquid-state silicon of carrier gas stream institute contact area reduces, and is promoted in liquid-state silicon by carrier gas to reduce even to avoid The generation of impurity.
In specific implementation, there are also preferred technical solutions further below by the present invention.
Preferably, the one end of the connection air flue with air inlet is tangent is connected to, the other end and the first cushion chamber The tangent connection in side.
Preferably, air inlet platform portion and mating canister portion are integrally formed, and the inside of mating canister portion is arranged in.
Preferably, the screw pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, the outlet position of water conservancy diversion air flue In the lower end surface of guide shell；Alternatively,
The screw pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, radius is gradually increased, the outlet of water conservancy diversion air flue At the friendship of lower end positioned at guide shell lateral surface or the lateral surface positioned at guide shell and lower end surface.
Preferably, the quantity of the water conservancy diversion air flue is 2,3 or 4.
Preferably, the lower end with connect cylinder is equipped with internal screw thread, and the upper end of the guide shell is equipped with and described The external screw thread that internal screw thread matches.
Preferably, the middle part of the guide shell is equipped with and does the flange annular in shape circumferentially extended along its outer surface.
Preferably, the material with connect cylinder and guide shell is graphite or molybdenum.
The inside of mating canister portion is arranged in the air inlet platform portion of guiding device of the present invention, in order to avoid in the double of polycrystalline ingot furnace The perforative through-hole of appendix is opened up on the steel shell of layer water cooling and on the insulation board of heat-insulation cage, also facilitates the cloth of appendix Set connection.Air inlet platform portion produces the visual field led in ingot furnace in guiding device and blocks, but the area deficiency view being blocked The a quarter of scene product, has the visual field led in ingot furnace in guiding device.By guiding device from the observation window of furnace roof The speed of growth for surveying crystal bar measurement crystal can be inserted in the state that silicon material in ingot furnace can be watched；Infrared detecting set is by leading Stream device can detect the state of silicon material in furnace, and automatic crystal growing technology is gone on smoothly.Carrier gas is divided into multi beam carrier gas by guiding device Stream obliquely blows the different zones for penetrating liquid silicon face respectively, effectively increases the contact area of carrier gas and liquid silicon face, The load volume that unit area is contacted is less, and the heat that carrier gas is taken away from unit area is less, and carrier gas leads to the region liquid-state silicon The range of decrease of temperature reduces, and degree of supercooling weakens, and has decreased or even eliminated in the region liquid-state silicon by the impurity satiety caused by carrier gas Impurity inclusion is formed with forming core and the impurity nucleus growth promoted.The outgoing carrier gas flow point of guiding device outflow dissipates obliquely It blows and penetrates liquid silicon face, blow and penetrate the central distribution that region surrounds liquid-state silicon, outgoing carrier gas stream generates carrier gas to liquid-state silicon and answers Power, the flowing of carrier gas stress drive surface layer liquid-state silicon, and form the rotational flow field for making circumferential flow.Rotational flow field is conducive to liquid-state silicon Internal Impurity Transport promotes the volatilization of impurity to surface；Rotational flow field also helps that matter in liquid-state silicon is miscellaneous to be transported and uniformly Distribution, makes the radial resistivity of crystal be more evenly distributed.
Another technical solution of the invention is to provide a kind of guiding device for polycrystalline ingot furnace, and designing points exist In: including the hollow water conservancy diversion canister portion being fixedly connected and air inlet platform portion, in the barrel of the water conservancy diversion canister portion upper end setting and its The concentrically cushion chamber of line；The air inlet that setting is flowed into for carrier gas in air inlet platform portion, passes through between air inlet and cushion chamber and is connected to Air flue connection；In the barrel of the water conservancy diversion canister portion setting at least one from the lower end surface of cushion chamber along cylindrical helix to downward The water conservancy diversion air flue stretched, the outlet of water conservancy diversion air flue are located at the lower end of water conservancy diversion canister portion.
In, guiding device of the invention is assemblied in the lower end of the diversion pipe of the guiding device of the prior art, gas transmission The inside of the guiding device of the prior art is arranged in pipe, and the air inlet of existing carrier gas on the upper end of appendix and ingot furnace connects Logical, lower end is connected to the air inlet of guiding device of the present invention.There is the visual field led in ingot furnace in guiding device of the present invention, lead to Cross that situation, insertion that the guiding device can watch in ingot furnace from the observation window of furnace roof survey crystal bar, infrared detecting set can be visited normally The state of the silicon material in ingot furnace is surveyed, automatic crystal growing technology is gone on smoothly.The guiding device makes carrier gas disperse obliquely to blow to penetrate liquid The different zones of state silicon face, increase the contact area of carrier gas stream and liquid silicon face, and carrier gas stream blows the liquid-state silicon for penetrating region Degree of supercooling reduce, even avoid the generation of the impurity promoted in liquid-state silicon by carrier gas to reduce.
Preferably, the one end of the connection air flue with air inlet is tangent is connected to, the side of the other end and cushion chamber The tangent connection in face.
Preferably, the water conservancy diversion canister portion and air inlet platform portion are integrally formed, and air inlet platform portion is arranged in water conservancy diversion canister portion Portion.
Preferably, the screw pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, the outlet position of water conservancy diversion air flue In the lower end surface of water conservancy diversion canister portion；Alternatively,
The screw pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, radius is gradually increased, the outlet of water conservancy diversion air flue Positioned at the lower end of water conservancy diversion canister portion lateral surface or at the lateral surface of water conservancy diversion canister portion and the friendship of lower end surface.
Preferably, the quantity of the water conservancy diversion air flue is 3,4 or 5.
Preferably, the upper end setting of the water conservancy diversion canister portion of the guiding device is along the internal screw thread of centerline direction or outer Screw thread.
Preferably, the material of the guiding device is graphite or molybdenum.
The inside of water conservancy diversion canister portion is arranged in the air inlet platform portion of guiding device of the present invention, in order to avoid in the double of polycrystalline ingot furnace The perforative through-hole of appendix is opened up on the steel shell of layer water cooling and on the insulation board of heat-insulation cage, and facilitates the cloth of appendix Set connection.Air inlet platform portion produces the visual field led in ingot furnace in guiding device and blocks, but the area being blocked is not The a quarter of sufficient visual field area has the visual field led in ingot furnace in guiding device.By the guiding device from furnace roof Observation window can watch the state of silicon material in ingot furnace, and the speed of growth for surveying crystal bar measurement crystal can be inserted；Infrared detecting set The state of silicon material in furnace can be detected by guiding device, automatic crystal growing technology is gone on smoothly.Guiding device is divided into carrier gas more Shu Zaiqi stream obliquely blows the different zones for penetrating liquid silicon face respectively, effectively increases the contact of carrier gas with liquid silicon face Area, the load volume that unit area is contacted is less, and the heat that carrier gas stream is taken away from unit area is less, the area carrier gas conductance Zhi Gai The temperature drop of the liquid-state silicon in domain reduces, and degree of supercooling weakens, and has decreased or even eliminated and has been promoted in the region liquid-state silicon by carrier gas Impurity supersaturation forming core and impurity nucleus growth formed impurity inclusion.The outgoing carrier gas flow point of guiding device outflow dissipates inclination Ground, which is blown, penetrates liquid silicon face, blows and penetrates the central distribution that region surrounds liquid-state silicon, and outgoing carrier gas stream generates carrier gas to liquid-state silicon and answers Power, the flowing of carrier gas stress drive superficial layer liquid-state silicon, and the rotational flow field for making circumferential flow is formed in liquid-state silicon, be conducive to liquid Impurity Transport inside state silicon promotes the volatilization of impurity to surface；Rotational flow field also help matter in liquid-state silicon it is miscellaneous transport and It is uniformly distributed, the radial resistivity of crystal is made to be more evenly distributed.
Yet another technique scheme of the invention is to provide a kind of guiding device for polycrystalline ingot furnace, and designing points exist In: including buffering cavity portion, air inlet pipe portion and at least one deflecting gas tube；The buffering cavity portion mainly by inner sidewall, lateral wall, on The airtight cavity annular in shape that end wall and lower end wall are constituted；The one end of air inlet pipe portion is fixed and is connected to buffering cavity portion；Institute The lower section that deflecting gas tube is distributed in buffering cavity portion along cylindrical helix is stated, under the import and buffering cavity portion of deflecting gas tube upper end End wall is connected to and fixes, and the outlet of deflecting gas tube lower end surrounds the center line of buffering cavity portion along identical angular distribution.
In use, guiding device of the invention is assemblied in the lower end of the diversion pipe of the guiding device of the prior art, gas transmission The inside of the guiding device of the prior art is arranged in pipe, and the air inlet of existing carrier gas on the upper end of appendix and ingot furnace connects Logical, lower end is connected to the air inlet pipe portion of guiding device of the present invention.There is the visual field led in ingot furnace in guiding device of the present invention, The state that can be watched by the guiding device from the observation window of furnace roof in ingot furnace, insertion survey crystal bar, infrared detecting set can be normal Detect the state of the silicon material in ingot furnace.The guiding device makes carrier gas dispersion obliquely blow the different zones for penetrating liquid silicon face, Increase the contact area of carrier gas and liquid silicon face, the heat taken away on unit area by carrier gas is reduced, and carrier gas, which is blown, penetrates region The degree of supercooling of liquid-state silicon reduce, even avoid the generation of the impurity promoted in liquid-state silicon by carrier gas to reduce.
Preferably, the air inlet pipe portion is gentle rushes between cavity portion through communicating pipe connection, the one end of the communicating pipe With air inlet pipe portion is tangent is connected to and fixation, the other end and the side wall of buffering cavity portion be tangent to be connected to and fixation.
Preferably, the inside of buffering cavity portion is arranged in the air inlet pipe portion.
Preferably, the screw pitch of the helix of the deflecting gas tube outlet section is gradually reduced, the outlet position of deflecting gas tube In the underface of cushion chamber subordinate's end wall；Alternatively,
The screw pitch of the helix of the deflecting gas tube outlet section is gradually reduced, radius is gradually increased, the outlet of deflecting gas tube Positioned at the lower end of the extended surface of buffering cavity portion lateral wall or the outside of the extended surface positioned at buffering cavity portion lateral wall.
Preferably, the quantity of the deflecting gas tube is 2,3 or 4.
Preferably, the guiding device further includes hollow tubular fastening part, fastening part and buffering cavity portion top Axial restraint is held, fastening part is not along the internal screw thread of centerline direction or external screw thread.
Preferably, the material of the buffering cavity portion, air inlet pipe portion, deflecting gas tube and fastening part is molybdenum.
The inside of buffering cavity portion is arranged in the air inlet pipe portion of guiding device of the present invention, on the one hand avoids in polycrystalline ingot furnace Double water-cooled steel shell on and the insulation board of heat-insulation cage on open up the perforative through-hole of appendix, it is on the other hand convenient The arrangement of appendix is connected to.The air inlet pipe portion, which produces the visual field led in ingot furnace in guiding device, blocks, but is hidden The a quarter of the area deficiency visual field area of gear has the visual field led in ingot furnace in guiding device.Pass through guiding device The speed of growth for surveying crystal bar measurement crystal can be inserted in the state that the silicon material in ingot furnace can be watched from the observation window of furnace roof； Infrared detecting set can detect the state of silicon material in furnace by guiding device, and automatic crystal growing technology is gone on smoothly.Guiding device handle Carrier gas is divided into multi beam carrier gas stream and obliquely blows the different zones for penetrating liquid silicon face respectively, effectively increases carrier gas and liquid-state silicon The contact area on surface, the load volume that unit area is contacted is less, and the heat that carrier gas stream is taken away from unit area is less, carrier gas The temperature drop of the region liquid-state silicon caused by stream reduces, and degree of supercooling weakens, and has decreased or even eliminated in the region liquid-state silicon The impurity supersaturation forming core and impurity promoted by carrier gas, which is grown, forms impurity inclusion.The outgoing carrier gas flow point of guiding device It dissipates and obliquely blows to the surface of liquid-state silicon, blow and penetrate the central distribution that region surrounds liquid-state silicon, be emitted carrier gas stream and penetrate region to blowing Liquid-state silicon generate biggish carrier gas stress, the flowing of carrier gas stress drive superficial layer liquid-state silicon, and formed in liquid-state silicon and make week To the rotational flow field of flowing, is conducive to the Impurity Transport inside liquid-state silicon to surface, promotes the volatilization of impurity；Rotational flow field is also It transporting and being uniformly distributed conducive to matter in liquid-state silicon is miscellaneous, the radial resistivity of crystal is made to be more evenly distributed.
Beneficial effect
There is the visual field led in ingot furnace, by the way that connect cylinder is being matched in air inlet platform portion (air inlet pipe portion) setting in guiding device In portion/water conservancy diversion canister portion (buffering cavity portion), though visual field is blocked, the area deficiency visual field area being blocked four/ One, there is in guiding device the visual field led in ingot furnace；The state in ingot furnace can be successfully watched by guiding device, side Just stoker operates；It is inserted by guiding device and surveys crystal bar, measure the speed of growth of crystal；Infrared detecting set can by guiding device The state of the silicon material in ingot furnace is detected, automatic crystal growing technology can be gone on smoothly.
Reducing the supercooling of local caused by carrier gas, multiple flow-guiding channels of guiding device in liquid-state silicon makes carrier gas be divided into multi beam Carrier gas stream, multi beam carrier gas flow point dissipate and obliquely blow the different zones for penetrating liquid silicon face, effectively increase carrier gas and liquid-state silicon The contact area on surface carries the load volume that contacts on the unit area of the liquid-state silicon in air flow blowing and jetting region and reduces, carrier gas stream from this The heat taken away on unit area is reduced, which is reduced by the local temperature drop caused by carrier gas stream, to reduce very To avoiding by the local supercooling caused by carrier gas in liquid-state silicon, and the impurity forming core growth promoted.
Promote impurity volatilization and impurity to be uniformly distributed, improves the quality of crystal, multiple flow-guiding channels of guiding device surround The center line of guiding device is uniformly distributed, and carrier gas is divided into multi beam carrier gas stream through multiple flow-guiding channels, and carrier gas stream is obliquely blown respectively The different zones of liquid silicon face are penetrated, carrier gas stream, which is blown, penetrates the central distribution that region surrounds liquid silicon face, and carrier gas stream is to liquid Silicon generate driving laminar flow carrier gas stress, carrier gas stress drive liquid-state silicon flowing, formed around its center flow rotational flow field. Rotational flow field is conducive to the Impurity Transport liquid-state silicon surface flotation to liquid-state silicon edge, reduces the impurity of floating to crystal yield Influence, improve the yield rate of crystal；It also helps the surface of the Impurity Transport inside liquid-state silicon to liquid-state silicon, accelerates liquid The volatilization of impurity in silicon；It is miscellaneous to be conducive to matter in liquid-state silicon under the collective effect of free convection flow field and rotational flow field for liquid-state silicon Transport and be uniformly distributed, avoid impurity local be enriched with, so that crystal radial direction resistivity is more evenly distributed, the quality of crystal obtain into One step improves.
Guiding device of the present invention does not need to be transformed the steel shell of ingot furnace and the insulation board of heat-insulation cage, transformation At low cost, transformation difficulty is small.
Detailed description of the invention
The structure organigram of Fig. 1 polycrystalline ingot furnace in the prior art.
The assembly relation schematic diagram of the use state of the guiding device of Fig. 2 embodiment 1.
The schematic cross-sectional view with connect cylinder 21 in Fig. 3 Fig. 2.
The direction A-A schematic cross-sectional view in Fig. 4 Fig. 3.
The schematic cross-sectional view of guide shell 22 in Fig. 5 Fig. 2.
The direction B-B schematic cross-sectional view in Fig. 6 Fig. 5.
The elevational schematic view of Fig. 7 Fig. 5.
Guide shell 22 in Fig. 8 Fig. 2 face the OR cutting spread along Fig. 6 opens the schematic diagram that rear water conservancy diversion air flue 222 is distributed.
The schematic cross-sectional view of another structure with connect cylinder 21 in Fig. 9 Fig. 2.
The direction C-C schematic cross-sectional view in Figure 10 Fig. 9.
The assembly relation schematic diagram of the use state of the guiding device of Figure 11 embodiment 2.
The schematic cross-sectional view of guiding device 30 in Figure 12 Figure 11.
The direction D-D schematic cross-sectional view in Figure 13 Figure 12.
The elevational schematic view of Figure 14 Figure 12.
Guiding device 30 in Figure 15 Figure 11 face the OR cutting spread along Figure 13 opens the schematic diagram that rear water conservancy diversion air flue 36 is distributed.
The schematic cross-sectional view of another structure of guiding device 30 in Figure 16 Figure 11.
The direction E-E schematic cross-sectional view in Figure 17 Figure 16.
The assembly relation schematic diagram of the application state of the guiding device of Figure 18 embodiment 3.
The schematic cross-sectional view of guiding device 40 in Figure 19 Figure 18.
The direction F-F schematic cross-sectional view in Figure 20 Figure 19.
Figure 21 flow-guiding channel design diagram.
In figure, 12- guiding device, 121- match connected nut, 122- diversion pipe, 123- graphite-pipe, 60- push up thermal insulation board, 20, 30,40- guiding device, 21- match connect cylinder, 22- guide shell, 221- be coupled canister portion, 212- air inlet platform portion, 213,33- air inlet, Connection air flue, the first cushion chamber of 215-, 216- ring-shaped step, 217,37,46- internal screw thread, the second cushion chamber of 221-, 222,36- water conservancy diversion air flue, 223- flange, 224- external screw thread, 31- water conservancy diversion canister portion, 32- air inlet platform portion, 35- cushion chamber, 41- buffering Cavity portion, 42- air inlet pipe portion, 43- deflecting gas tube, 44- communicating pipe, the fastening part 45-.
Specific embodiment
In order to clarify the technical solutions and technical objectives of the present invention, with reference to the accompanying drawing and specific embodiment is to the present invention It is described further.
Embodiment 1
A kind of guiding device for polycrystalline ingot furnace of the invention, as shown in Fig. 2, the guiding device 20 includes mating Cylinder 21 and guide shell 22.The lower end with connect cylinder 21 is equipped with internal screw thread 217, and the upper end of guide shell 22 is equipped with external screw thread 224；The external screw thread 224 of internal screw thread 217 and guide shell 22 with connect cylinder 21 matches.The middle part of guide shell 22 is equipped with along its appearance The flange 223 circumferentially extended is done in face, as shown in figure 5, flange 223 surround 22 outer surface of guide shell one week, in the table of guide shell 22 Bulge-structure annular in shape is formed on face, plays limit, fixed function.In the application, the upper end of guide shell 22 passes through heat-insulation cage The top middle part of insulation board 60 through-hole, and be arranged in 60 top of top insulation board with the axial assembly of connect cylinder 21, with connect cylinder 21 and lead Flow cartridge 22 is fastenedly connected by above-mentioned internal and external screw thread 217,224.With connect cylinder 21 and 223 collective effect of flange guide shell 22 It is fixed on the insulation board 60 of top.The material with connect cylinder 21 and guide shell 22 is graphite, is preferentially isostatic pressing formed graphite, can also Think the metal molybdenum or titanium of higher cost.
Wherein, described to match connect cylinder 21, as shown in figure 3, including mating canister portion 211 and air inlet platform portion 212, canister portion 211 is coupled It is equipped with the cylindrical body with its concentrically through-hole of line, as cylinder for middle part, the top setting internal diameter of mating canister portion 211 is greater than should Concentrically line, the counterbore and through-hole collective effect form the top that canister portion 211 is coupled for the counterbore of through-hole, the counterbore and through-hole Ring-shaped step 216.The ring-shaped step 216 is used to assemble in the prior art for transporting the graphite-pipe 123 of carrier gas, such as Fig. 2 institute Show.The first cushion chamber 215 that the lower ending opening annular in shape circumferentially extended is made in setting in the barrel of canister portion 211 is coupled, first is slow Chamber 215 and mating canister portion 211 concentrically line are rushed, as shown in Figure 3, Figure 4, the first cushion chamber 215 is located under ring-shaped step 216 Side.Above-mentioned internal screw thread 217 is arranged in the lower end of the mating canister portion 211, positioned at the lower section of the first cushion chamber 215.In described Screw thread 217 extends along the centerline direction of mating canister portion 211, and and mating canister portion 211 concentrically line, as shown in Figure 3.
The inside of mating canister portion 211 is arranged in air inlet platform portion 212, as shown in Figure 3,4, air inlet platform portion 212 and mating Canister portion 211 is integrally formed, and is not easy the problem of being fixedly connected to avoid graphite material component.It is arranged in air inlet platform portion 212 for carrying The air inlet 213 that gas flows into, by being connected to the connection of air flue 214 between air inlet 213 and the first cushion chamber 215.The connection air flue 214 arrange along clockwise direction, as shown in figure 4, the one end of connection air flue 214 with air inlet 213 is tangent is connected to, the other end With the side of the first cushion chamber 215 is tangent is connected to, the carrier gas stream in the connection air flue 214 flows into first in a clockwise direction In cushion chamber 215.
Wherein, above-mentioned external screw thread 224 is arranged in 22 upper end of guide shell, the external screw thread 224 and above-mentioned internal screw thread 217 It matches.The second cushion chamber 221 that setting upper surface is open in the barrel of 22 upper end of guide shell, the second cushion chamber 221 are ring Around guide shell 22 center line, one week chamber annular in shape, as shown in figure 5, the external screw thread 224 is nested in the second cushion chamber 221 Lateral wall outside, second cushion chamber 221, external screw thread 224 and guide shell 22 concentrically line.Second cushion chamber 221 and first cushion chamber 215 it is corresponding, i.e. 215 lower ending opening positive of the upper end opening of the second cushion chamber 221 and the first cushion chamber It is right.4 water conservancy diversion air flues 222 are set in the barrel of the guide shell 22, and as viewed in figures 5-8,4 water conservancy diversion air flues 222 are around leading The center line of flow cartridge 22 is uniformly distributed, as shown in fig. 6, water conservancy diversion air flue 222 is also possible to 2 or 3 or 5 or more.The water conservancy diversion Air flue 222 is extended downwardly from the lower end surface of the second cushion chamber 221 along columned helix, i.e., in water conservancy diversion air flue 222 Heart line is extended downwardly along hand of helix, and is overlapped with the helix.The non-uniform pitch of helix, under the screw pitch of upper end is long The screw pitch at end is short, and the screw pitch at water conservancy diversion air passage outlet is most short；Helix is located in the barrel of guide shell 22, revolves along clockwise direction Turn (when seen from above), helix and guide shell 22 concentrically line identical as the direction of carrier gas stream in connection air flue 214. The import of the upper end of water conservancy diversion air flue 222 is connected to the lower end surface of the second cushion chamber 221, and the lower end of water conservancy diversion air flue 222 goes out Mouth is located at the lower end of guide shell 22, as shown in Figure 8.
The water conservancy diversion air flue 222 be connected to air flue 214 and arranged along the identical hand of spiral, be connected to air flue 214 and air inlet 213, the first cushion chamber 215 distinguishes tangent connection, seamlessly transits respectively in connectivity part.The air flue that such mode is laid out can be reduced The resistance of carrier gas circulation, makes carrier gas keep higher kinetic energy, and into the first and second cushion chamber 215,221, carrier gas is slow first and second Intracavitary rotation is rushed, there is longer process, is conducive to carrier gas and relatively evenly flows into water conservancy diversion air flue 222.The carrier gas flows through air inlet The circulating resistance that hole 213, connection air flue 214, the one or two cushion chamber 215,221 and water conservancy diversion air flue 222 are encountered is smaller, kinetic energy damage Consume less, carrier gas flows to the exit energy still with higher of water conservancy diversion air flue 222 so that carrier gas it is with higher go out firing rate Degree, outgoing carrier gas stream generate biggish carrier gas stress to liquid-state silicon, peomote liquid-state silicon rotation, generated in liquid-state silicon compared with Strong rotational flow field.
By changing the screw pitch and radius of the helix of 222 outlet section of water conservancy diversion air flue, to design the outlet of water conservancy diversion air flue 222 Positioned at the exit direction of the carrier gas stream in the exit of the position and water conservancy diversion air flue 222 of the lower end of guide shell 22, namely lead The tangential direction of the center line in the exit in gas road 222.The screw pitch of the helix of 22 lower end of guide shell is gradually reduced, When radius is constant, the outlet of water conservancy diversion air flue 222 is located on the lower end surface of guide shell 22, as shown in fig. 7, water conservancy diversion air flue 222 goes out Between the tangent line (i.e. the exit direction of carrier gas) of center line and the lower end surface (being parallel to liquid silicon face) of guide shell 22 at mouthful Angle (angle between tangent line and lower end surface normal) is gradually increased, and the contact area for being emitted carrier gas stream and liquid silicon face gradually increases Greatly；When internal diameter of the screw pitch in 222 exit of water conservancy diversion air flue close to the hole of water conservancy diversion air flue 222, the exit of water conservancy diversion air flue 222 Center line 22 lower end surface of tangent line and guide shell (being parallel to liquid silicon face) between angle close to 90 degree, i.e. water conservancy diversion air flue The tangent line of 222 exit center lines and 22 lower end surface of guide shell close to parallel, be emitted at this time carrier gas stream and liquid silicon face connect Close parallel, the contact area for being emitted carrier gas stream and liquid silicon face is maximum, the unit in the region by load air flow blowing and jetting of liquid-state silicon The amount of the carrier gas contacted on area is minimum, and the heat that carrier gas stream is taken away from the unit area in the region is minimum, and carrier gas stream is blown The temperature drop for penetrating the liquid-state silicon in region is minimum, and degree of supercooling weakens, and greatly reduces even to be eliminated in liquid-state silicon and is promoted by carrier gas Into melt undercooling and impurity formed.Furthermore it is also possible to which base area needs, change the helix of 222 outlet section of water conservancy diversion air flue Screw pitch and radius, make that the screw pitch of helix lower end is gradually reduced, radius is gradually increased, then the outlet of water conservancy diversion air flue 222 is located at The lower end of 22 lateral surface of guide shell can also be located at the lateral surface of guide shell 22 and the friendship of lower end surface, as shown in Figure 9, Figure 10, To facilitate the export direction of design water conservancy diversion air flue 222, optimization carrier gas stream blows the region penetrated on liquid silicon face, in nebulizer gas pressure In the case where determination, make to generate stronger rotational flow field in liquid-state silicon；And increase what carrier gas stream and liquid silicon face were in contact Area, reduces the heat taken away in the per surface area of liquid-state silicon by carrier gas stream, reduce in liquid-state silicon by carrier gas caused by Local temperature the range of decrease, reduce carrier gas lead to the impurity generated in liquid-state silicon, improve the quality of crystal.
The guiding device of present embodiment is equipped with 4 water conservancy diversion air flues to change carrier gas flow direction, and 4 water conservancy diversion air flues surround The center line of guiding device be uniformly distributed, the outlet of 4 water conservancy diversion air flues is respectively toward to the different zones of liquid silicon face, liquid 4 blowing for carrier gas stream will be formed on silicon face penetrates region.4 water conservancy diversion air flues of the carrier gas through guiding device are divided into 4 carrier gas streams, should 4 carrier gas streams dispersedly blow 4 regions for penetrating liquid silicon face respectively, and outgoing carrier gas stream blows 4 regions penetrated around liquid The central distribution of state silicon each blows and penetrates the load volume that region is contacted only has displacement 1/4, and is emitted carrier gas stream and obliquely blows Penetrate the surface of liquid-state silicon, the contact surface for being emitted carrier gas stream and liquid silicon face is greater than the section of carrier gas a fluid stream, then every Shu Zaiqi 1/4 vertically to blow from the concentration for blowing the heat taken away in the liquid-state silicon for penetrate region and being less than the prior art is flowed, carrier gas stream is blown The local temperature drop for the liquid-state silicon for penetrating region greatly reduces, and degree of supercooling reduces, the forming core of impurity caused by carrier gas in liquid-state silicon Probability is reduced, and reduces the formation for the impurity that carrier gas is promoted.By adjusting the export direction of water conservancy diversion air flue, change outgoing carrier gas Angle (angle of outgoing carrier gas stream and liquid-state silicon surface normal) between stream and liquid silicon face, increases the angle, can increase The contact area of carrier gas stream and liquid silicon face, the contact area will be added to the above-mentioned included angle cosine value of carrier gas a fluid stream sectional area Reciprocal times.This mode and the mode of a plurality of flow-guiding channel combine, and can effectively increase connecing for carrier gas and liquid silicon face Contacting surface product, makes carrier gas stream take away less heat from the unit area for blowing the liquid-state silicon for penetrating region.Suitably reduce outgoing to carry Angle between air-flow and liquid silicon face is emitted carrier gas stream and obliquely blows the surface for penetrating liquid-state silicon, carrier gas stream is blown such as 30-40 degree The load volume contacted on the unit area for the liquid-state silicon for penetrating region is increased slightly, but it is biggish to liquid-state silicon generation to be emitted carrier gas stream Drive the carrier gas stress of laminar flow, the flowing of carrier gas stress drive superficial layer liquid-state silicon；Carrier gas stream blows the region penetrated around liquid The central distribution of silicon, carrier gas stress then form in liquid-state silicon around the central distribution of liquid-state silicon and make the relatively strong of circumferential flow Rotational flow field.Rotational flow field is conducive to the Impurity Transport liquid-state silicon surface flotation to the edge of liquid-state silicon, reduces floating Influence of the impurity to crystal yield, improves the yield rate of crystal；It also helps simultaneously and the impurity inside liquid-state silicon is transported to table Face promotes the volatilization of impurity；Liquid-state silicon is conducive to matter in liquid-state silicon under the collective effect of free convection flow field and rotational flow field Miscellaneous transporting and being uniformly distributed, and more evenly, the quality of crystal is further enhanced the radial resistivity of crystal.
Guiding device of the present invention includes matching connect cylinder 21 and guide shell 22, with connect cylinder 21 by mating canister portion 211 and air inlet platform portion 212 are constituted, and inside mating canister portion 211, the water conservancy diversion air flue 222 for changing carrier gas flow direction is arranged in water conservancy diversion the setting of air inlet platform portion 212 In the barrel of cylinder 22.In addition, air inlet platform portion 212 also can be set in the outside of mating canister portion 211, air inlet platform portion 212 will To the visual field led in ingot furnace in guiding device of the present invention do not have it is any block, however, it is desirable to the steel shell of ingot furnace And the insulation board of heat-insulation cage is transformed, difficulty is big, at high cost.The setting of air inlet platform portion 212 is being matched connect cylinder by present invention selection Inside portion 211, blocks, be blocked although air inlet platform portion 212 produces the visual field led in ingot furnace in guiding device Area is very small, a quarter of insufficient visual field area, as shown in figure 4, to the insertion watched, survey crystal bar of BF's inner state, red Outer survey meter does not influence the detection of silicon material state.More importantly, it is not necessary in the steel of the Double water-cooled of polycrystalline ingot furnace The perforative through-hole of appendix 50 is opened up on furnace body processed and on the insulation board of heat-insulation cage, also simplifies appendix 50 and the present invention The connection of guiding device is laid out.Although air inlet platform portion 212 in guiding device of the present invention in guiding device to leading in ingot furnace Visual field produce a quarter for the area deficiency visual field area for blocking, but being blocked；Therefore, water conservancy diversion dress through the invention The state that can see silicon material in furnace from the observation window of furnace roof is set, stoker is facilitated to operate；It is arranged in red right above guiding device Outer survey meter can detect the state of silicon material in furnace by guiding device, and automatic crystal growing technology successfully carries out；Pass through water conservancy diversion Device can will survey crystal bar and be inserted into ingot furnace, and rate of crystalline growth is convenient for measuring.
Embodiment 2
A kind of guiding device for polycrystalline ingot furnace of the invention, as shown in Figure 11, Figure 12, the guiding device 30 is wrapped Include water conservancy diversion canister portion 31 and air inlet platform portion 32, the material in water conservancy diversion canister portion 31 and air inlet platform portion 32 is the lower graphite of price, preferably For isostatic pressing formed graphite, it is also possible to the molybdenum or titanium of higher cost.The water conservancy diversion canister portion 31 is middle part equipped with logical along centerline direction Concentrically line, the upper end of water conservancy diversion canister portion 31 are arranged for being fixedly connected for the cylindrical body in hole, i.e. cylinder, the through-hole and water conservancy diversion canister portion 31 Internal screw thread 37, internal screw thread 37 along water conservancy diversion canister portion 31 centerline direction extend, external screw thread also can be set as needed.It is described The cushion chamber 35 of setting circumferentially in the barrel of 31 upper end of water conservancy diversion canister portion, cushion chamber 35 are around 31 center of water conservancy diversion canister portion Line one week chamber annular in shape, cushion chamber 35 are located at the lower section of the internal screw thread 37, and with the concentrically line of water conservancy diversion canister portion 31.Institute The inside that water conservancy diversion canister portion 31 is arranged in air inlet platform portion 32 is stated, as shown in Figure 12 and Figure 13,32 one of water conservancy diversion canister portion 31 and air inlet platform portion Molding, is not easy the problem of being fixedly connected to avoid graphite member.The air inlet 33 that setting is flowed into for carrier gas in air inlet platform portion 32, By being connected to the connection of air flue 34 between air inlet 33 and cushion chamber 35.The connection air flue 34 is arranged along clockwise direction, is connected to gas The one end in road 34 with air inlet 33 is tangent is connected to, the other end with the side of cushion chamber 35 is tangent is connected to, as shown in figure 13, with Make to be connected to carrier gas stream in air flue 34 to flow into along clockwise direction in cushion chamber 35.
4 water conservancy diversion air flues 36 are set in the barrel of the water conservancy diversion canister portion 31, and as illustrated in figs. 13-15,4 water conservancy diversion air flues 36 enclose Center line around water conservancy diversion canister portion 31 is uniformly distributed, and as shown in Figure 14,15, the water conservancy diversion air flue 36 is from the lower end surface of cushion chamber 35 Extended downwardly along cylindrical helix, i.e. the center line of water conservancy diversion air flue 36 is extended downwardly along hand of helix, and with the spiral shell Spin line is overlapped.The helix is located in the barrel of water conservancy diversion canister portion 31, and helix is rotated in a clockwise direction (seen from above When), identical as the flow direction of carrier gas stream in connection air flue 34, helix and water conservancy diversion canister portion 31 are total to axial line.The water conservancy diversion The import of the upper end of air flue 36 is connected to the lower end surface of cushion chamber 35, and the outlet of lower end is located at the lower end of water conservancy diversion canister portion 31. The quantity of the water conservancy diversion air flue may be 2,3 or 5 or more.
The water conservancy diversion air flue 36 be connected to air flue 34 and arranged along the identical hand of spiral, be connected to air flue 34 and air inlet 33, Cushion chamber 35 distinguishes tangent connection, seamlessly transits respectively in connectivity part.The air flue that such mode is laid out can reduce carrier gas circulation Resistance, reduce the energy loss of carrier gas, so that carrier gas is kept higher kinetic energy, into cushion chamber 35, carrier gas is in cushion chamber 35 Rotation, has longer process, is conducive to carrier gas and relatively evenly flows into water conservancy diversion air flue 36.The carrier gas flows through air inlet 33, connects The circulating resistance that air passage 34, cushion chamber 35 and water conservancy diversion air flue 36 are encountered is smaller, and kinetic energy loss is less, and carrier gas flows to water conservancy diversion gas The exit in road 36 energy still with higher, so that carrier gas exit velocities with higher, the carrier gas stream of outgoing is to liquid-state silicon Biggish carrier gas stress is generated, liquid-state silicon rotation is peomoted, stronger rotational flow field is generated in liquid-state silicon.
By changing the screw pitch and radius of the helix of 36 outlet section of water conservancy diversion air flue, to design the outlet position of water conservancy diversion air flue 36 In the exit direction of the carrier gas stream in the exit of the position and water conservancy diversion air flue 36 of the lower end of water conservancy diversion canister portion 31, namely lead Tangential direction of the center line in gas road 36 in exit.The screw pitch of the helix of the outlet section of the water conservancy diversion air flue 36 gradually subtracts It is small, when radius is constant, the outlet of water conservancy diversion air flue 36 is located on the lower end surface of water conservancy diversion canister portion 31, as shown in figure 14, water conservancy diversion air flue 36 Center line (be parallel to liquid-state silicon table in the tangent line (i.e. the exit direction of carrier gas stream) in exit and the lower end surface of water conservancy diversion canister portion 31 Face) between angle (angle between tangent line and lower end surface normal) be gradually increased, the carrier gas stream of outgoing and the contact of liquid silicon face Area is gradually increased；When aperture of the screw pitch of 36 outlet section of water conservancy diversion air flue close to the hole of water conservancy diversion air flue 36, water conservancy diversion air flue 36 Angle of the center line between 31 lower end surface of tangent line and water conservancy diversion canister portion (being parallel to liquid silicon face) in exit close to 90 degree, i.e., The center line of water conservancy diversion air flue 36 exit tangent line and 31 lower end surface of water conservancy diversion canister portion close to parallel, the carrier gas stream that is emitted at this time and For liquid silicon face close to parallel, the contact area for being emitted carrier gas stream and liquid silicon face is maximum, liquid-state silicon by load air flow blowing and jetting The load volume contacted on the unit area in region is minimum, and the heat that carrier gas stream is taken away from the unit area of liquid-state silicon is most Few, the temperature drop for the liquid-state silicon that carrier gas stream is contacted is minimum, then greatly reduces even to be eliminated in liquid-state silicon and promoted by carrier gas Into impurity formed.Furthermore it is also possible to which base area needs, change the screw pitch and radius of the helix of 36 outlet section of water conservancy diversion air flue, Make that the screw pitch of helix lower end is gradually reduced, radius is gradually increased, then the outlet of water conservancy diversion air flue 36 is located at outside water conservancy diversion canister portion 31 The lower end of side can also be located at the lateral surface of water conservancy diversion canister portion 31 and the friendship of lower end surface, as shown in Figure 16, Figure 17, with convenient The export direction of water conservancy diversion air flue 36 is designed, optimizes the position that carrier gas stream and liquid silicon face are in contact, such as makes it in liquid-state silicon Middle position between the heart and liquid-state silicon edge makes to generate stronger rotation in liquid-state silicon in the case where nebulizer gas pressure is certain Flow field；And increase the area that carrier gas stream and liquid silicon face are in contact, it reduces carrier gas stream and blows the liquid-state silicon for penetrating region from it The heat taken away in per surface area reduces the range of decrease of the local temperature in liquid-state silicon caused by carrier gas, and reducing carrier gas causes The impurity generated in liquid-state silicon improves the quality of crystal.
The guiding device of present embodiment is provided with 4 water conservancy diversion air flues to change carrier gas flow direction, and 4 water conservancy diversion air flues enclose Center line around guiding device is uniformly distributed, and the outlet of 4 water conservancy diversion air flues is respectively toward to the different zones of liquid silicon face, out It penetrates carrier gas stream and will form 4 in liquid silicon face and blow and penetrate region.4 water conservancy diversion air flues of the carrier gas through guiding device are divided into 4 beam carrier gas Stream, which dispersedly blows respectively penetrates liquid silicon face, and outgoing carrier gas stream forms 4 areas Ge Chuishe on liquid silicon face Domain, described 4 are blown the central distribution for penetrating region around liquid-state silicon, are each blown and are penetrated the load volume that region is contacted and there was only displacement 1/4, and be emitted carrier gas stream and obliquely blow the surface for penetrating liquid-state silicon, the contact area being emitted between carrier gas stream and liquid silicon face is wanted Greater than the area of section of outgoing carrier gas stream, then every Shu Zaiqi stream is concentrated in the prior art from blowing to penetrate the heat that region is taken away and be less than 1/4 vertically to blow, the temperature drop that carrier gas stream blows the liquid-state silicon for penetrating region greatly reduce, and degree of supercooling reduces, in liquid-state silicon Impurity forming core probability caused by carrier gas is reduced, and reduces the formation for the impurity that carrier gas is promoted.By adjusting going out for water conservancy diversion air flue Mouth direction changes the angle (angle of outgoing carrier gas stream and liquid-state silicon surface normal) of outgoing carrier gas stream and liquid silicon face, increases The big angle, can increase the contact area of carrier gas stream and liquid surface, which will be added to carrier gas flow section product Reciprocal times of above-mentioned included angle cosine value.This mode and the mode of a plurality of flow-guiding channel combine, and can effectively increase carrier gas stream With the contact area of liquid silicon face, blows carrier gas stream from it and take away less heat on unit area for liquid-state silicon for penetrating region Amount.Suitably reduce the angle between outgoing carrier gas stream and liquid silicon face, outgoing carrier gas stream generates bigger driving to liquid-state silicon The carrier gas stress of laminar flow, so that being enhanced in liquid-state silicon by the flow field that carrier gas generates.The export direction for adjusting water conservancy diversion air flue, makes water conservancy diversion Angle of the center line of air flue between the tangent line in exit and the lower end surface (being parallel to liquid silicon face) of water conservancy diversion canister portion 31 is smaller, Such as 30-40 degree, that is, reduce the angle between outgoing carrier gas stream and liquid silicon face, outgoing carrier gas stream obliquely blows the table for penetrating liquid-state silicon Face is blown the load volume contacted on the unit area for the liquid-state silicon for penetrating region and is increased slightly, but is emitted carrier gas stream and generates to liquid-state silicon The carrier gas stress of biggish driving laminar flow, the flowing of carrier gas stress drive superficial layer liquid-state silicon；Carrier gas stream blows the region penetrated and surrounds The central distribution of liquid-state silicon, carrier gas stress then formed in liquid-state silicon and circumferentially flowed around the central distribution of liquid-state silicon Stronger rotational flow field.Rotational flow field is conducive to the Impurity Transport liquid-state silicon surface flotation to the edge of liquid-state silicon, reduces Influence of the impurity of floating to crystal yield, improves the yield rate of crystal；It also helps simultaneously the impurity inside liquid-state silicon is defeated It is sent to surface, promotes the volatilization of impurity；Liquid-state silicon is conducive to liquid under the collective effect of free convection flow field and rotational flow field Matter is miscellaneous in silicon transporting and being uniformly distributed, and the radial resistivity of crystal is more evenly distributed, and the quality of crystal is further enhanced.
In the application, as shown in Figure 1, shown in Figure 11, guiding device 12 in the prior art includes axial sequentially connected graphite Pipe 123 matches connected nut 121 and diversion pipe 122.The upper end of diversion pipe 122 is equipped with and matches with 121 internal screw thread of connected nut External screw thread.The upper end of diversion pipe 122 passes through the through-hole at 60 middle part of top insulation board of heat-insulation cage, and setting is on the insulation board 60 of top Side is fastened with connected nut 121, and the internal screw thread 37 on the setting of 122 lower end of diversion pipe and 30 top of guiding device of the present invention matches External screw thread.Guiding device 30 and diversion pipe 122 of the present invention axially fasten connection, guiding device 30 by the internal and external screw thread Lower end protrude into the middle through-hole of the cover board being arranged on crucible guard boards, the carrier gas outlet of the lower end of guiding device 30 is located at Below the cover board, and it is opposite with the silicon material in crucible.Appendix 50 is arranged in the guiding device 12 of the prior art, such as Figure 11 Shown, the upper end of appendix 50 is connected to the air inlet pipe of carrier gas existing on ingot furnace, lower end and guiding device of the present invention into Stomata 33 is connected to.Guiding device of the present invention is fit directly into the lower end of the diversion pipe 123 of prior art guiding device 12, it is only necessary to External screw thread is set on the diversion pipe lower end, it is not necessary that other components are transformed, transformation is more convenient, cost is lower.
Guiding device 30 of the present invention includes water conservancy diversion canister portion 31 and air inlet platform portion 32, and air inlet platform portion 32 is arranged in water conservancy diversion canister portion 31 Inside, the flow-guiding channel 36 for changing carrier gas flow direction are arranged in the barrel of water conservancy diversion canister portion 31.In addition, air inlet platform portion 32 can also To be arranged in the outside of water conservancy diversion canister portion 31, such layout, air inlet platform portion 32 will be to leading to ingot furnace in guiding device of the present invention Interior visual field is not blocked, however, it is desirable to the insulation board of steel shell and heat-insulation cage to ingot furnace is transformed, difficulty Greatly, at high cost.The present invention selection air inlet platform portion 32 is arranged in water conservancy diversion canister portion 31, although air inlet platform portion 32 is in guiding device The visual field led in ingot furnace, which produces, blocks, but the area being blocked is very small, a quarter of insufficient visual field area, such as schemes Shown in 13, the insertion of BF's inner state watched, survey crystal bar, infrared detecting set do not influence the detection of silicon material state.More It is important that, it is not necessary to gas transmission is opened up on the steel shell of the Double water-cooled of polycrystalline ingot furnace and on the insulation board of heat-insulation cage The perforative through-hole of pipe 50, also simplify appendix 50 and guiding device of the present invention is connected to layout.In guiding device of the present invention Although air inlet platform portion 32 produces the visual field led in ingot furnace in guiding device 30 and blocks, the area deficiency being blocked is regarded The a quarter of scene product；Therefore, guiding device through the invention can see the shape of silicon material in furnace from the observation window of furnace roof State facilitates stoker to operate；The infrared detecting set right above guiding device, which is arranged in, can detect silicon in furnace by guiding device The state of material, advantageous automatic crystal growing technology successfully carry out；It can will survey crystal bar by guiding device to be inserted into ingot furnace, side Just the speed of growth of crystal is measured.
Embodiment 3
A kind of guiding device for polycrystalline ingot furnace of the invention, as shown in Figure 18, Figure 19: the guiding device 40 wraps Fastening part 45 is included, buffering cavity portion 41, air inlet pipe portion 42, communicating pipe 44 and deflecting gas tube 43, material is molybdenum, also be can be used into The heat-resisting materials such as this high titanium.Fastening part 45 is hollow cylinder, the top of buffering cavity portion 41 is arranged in, and axially solid with it It is fixed.Internal screw thread 46 along buffering 41 centerline direction of cavity portion is set on the inner wall of fastening part 45, and base area needs also to can be set External screw thread.The buffering cavity portion 41 is the airtight cavity of tubular in a ring, mainly by inner sidewall, lateral wall, upper end wall and lower end Wall is constituted, and inner sidewall and lateral wall are tubular, and inner sidewall is nested in lateral wall, and concentrically line.The air inlet pipe portion 42 is set The inside in buffering cavity portion 41 is set, as shown in Figure 19, Figure 20, air inlet pipe portion 42 and buffering cavity portion 41 are fixed, 42 He of air inlet pipe portion By being connected to communicating pipe 44 between buffering cavity portion 41, communicating pipe 44 is arranged along clockwise direction；The one end of the communicating pipe 44 and The tangent connection of air inlet pipe portion 42 and fixation, the other end with the side wall of buffering cavity portion 41 is tangent is connected to and fixation, as shown in figure 20, So that carrier gas stream flows into buffering cavity portion 41 along clockwise direction in communicating pipe 44.The lower section of the buffering cavity portion 41 is arranged 4 To change the deflecting gas tube 43 of carrier gas flow direction, as shown in figure 20, axial line of 4 deflecting gas tubes 43 around buffering cavity portion 41 is equal Even distribution, deflecting gas tube 43 are also possible to 2 or 3 or 5 or more.The deflecting gas tube 43 is distributed in along cylindrical helix Buffer the underface of cavity portion 41, i.e. the center line of deflecting gas tube 43 extends downwardly along hand of helix, and with the helix weight It closes.The helix is located at the underface of buffering 41 lower end wall of cavity portion, and helix is rotated in a clockwise direction (seen from above When), identical as the direction of carrier gas stream in communicating pipe 44, helix and buffering cavity portion 41 are total to axial line.Deflecting gas tube 43 it is upper The input end of end is connected to and fixes with the lower end wall of buffering cavity portion 41, and the outlet end of the lower end of deflecting gas tube 43 is located at buffering The lower section of 41 lower end wall of cavity portion.The outlet of the deflecting gas tube surrounds the center line of buffering cavity portion 41 along identical angular uniform Distribution.
It is arranged along the identical hand of spiral deflecting gas tube 43 and communicating pipe 44, communicating pipe 44 and air inlet pipe portion 42 are delayed The tangent connection of difference for rushing cavity portion 46, seamlessly transits respectively in connectivity part.The air flue that such mode is laid out can reduce carrier gas The resistance of circulation makes carrier gas keep higher kinetic energy, into buffering cavity portion 41, rotates in buffering cavity portion 41, there is longer stream Journey is conducive to carrier gas and relatively evenly flows into deflecting gas tube 43.The carrier gas flows through air inlet pipe portion 42, communicating pipe 44, cushion chamber The circulating resistance that portion 41 and deflecting gas tube 43 are encountered is smaller, and kinetic energy loss is smaller, and carrier gas flows to the exit of deflecting gas tube 43 Energy still with higher, so that carrier gas exit velocities with higher, the carrier gas stream of outgoing generates biggish load to liquid-state silicon Gas stress peomotes liquid-state silicon flowing, stronger rotational flow field is generated in liquid-state silicon.
By changing the screw pitch and radius of the helix of 43 outlet section of deflecting gas tube, to design the outlet position of deflecting gas tube 43 The exit direction of the carrier gas stream in the exit of position and the deflecting gas tube 43 below buffering 41 lower end wall of cavity portion, namely Tangential direction of the center line of deflecting gas tube 43 in exit.The screw pitch of the helix of 43 outlet section of deflecting gas tube gradually subtracts It is small, radius is constant, deflecting gas tube 43 outlet be located at buffering cavity portion 41 lower end wall underface；The center line of deflecting gas tube 43 Between the tangent line (i.e. the exit direction of carrier gas stream) and buffering 41 lower end wall surface of cavity portion (being parallel to liquid silicon face) in exit Angle (angle between tangent line and lower end surface normal) is gradually increased, the contact area between the carrier gas stream and liquid silicon face of outgoing by It is cumulative big；When bore of the screw pitch in 43 exit of deflecting gas tube close to deflecting gas tube 43, the center line of deflecting gas tube 43 Angle between the tangent line and buffering 41 lower end wall surface of cavity portion (being parallel to liquid silicon face) in exit is close to 90 degree, i.e. water conservancy diversion gas The center line of pipe 43 exit tangent line with buffering 41 lower end wall surface of cavity portion close to carrier gas stream and liquid parallel, be emitted at this time State silicon face is maximum close to the contact area in parallel, being emitted carrier gas stream and liquid silicon face, and liquid-state silicon is by the table of load air flow blowing and jetting The load volume that unit area on face is contacted is minimum, and the heat that carrier gas stream is taken away from the unit area of liquid-state silicon is minimum, The temperature drop that carrier gas stream blows the liquid-state silicon for penetrating region is minimum, and degree of supercooling weakens, and greatly reduces and even has been eliminated in liquid-state silicon By the formation for the impurity that carrier gas is promoted.In addition, as needed, the spiral shell of the helix of 43 outlet section of deflecting gas tube can also be changed Away from and radius, when the screw pitch of helix lower end is gradually reduced, radius is gradually increased, then the outlet of deflecting gas tube 43 is located at slow The lower end for rushing the extended surface of 41 lateral wall of cavity portion also can choose the outside for being located at the extended surface of buffering 41 lateral wall of cavity portion；With The export direction for facilitating design deflecting gas tube 43, optimizes the carrier gas stream of outgoing and the position of liquid silicon face being in contact, such as makes It is in the middle position between liquid-state silicon center and liquid-state silicon edge makes in liquid-state silicon in the case where nebulizer gas pressure is certain Generate stronger rotational flow field；And increase the area that carrier gas stream and liquid silicon face are in contact, it reduces carrier gas stream and is blown from it The heat taken away in the per surface area for the liquid-state silicon for penetrating region reduces the local temperature in liquid-state silicon caused by carrier gas stream The range of decrease, reducing carrier gas leads to the impurity generated in liquid-state silicon, improves the quality of crystal.
The guiding device of present embodiment is equipped with 4 deflecting gas tubes to change carrier gas flow direction, and 4 deflecting gas tubes surround The center line of guiding device be uniformly distributed, the outlet of 4 deflecting gas tubes is respectively toward to the different zones of liquid silicon face, outgoing Carrier gas stream and liquid silicon face will form 4 regions being in contact.4 deflecting gas tubes of the carrier gas through guiding device are divided into 4 beams load Air-flow, which, which dispersedly blows, penetrates liquid silicon face, and outgoing carrier gas stream, which forms 4 on liquid silicon face and blows, penetrates region, 4 are blown the central distribution for penetrating region around liquid-state silicon, are each blown and are penetrated the load volume that region is contacted only has displacement 1/4, And outgoing carrier gas stream obliquely blows the surface for penetrating liquid-state silicon, the contact area for being emitted carrier gas stream and liquid silicon face is greater than outgoing The area of section of carrier gas stream, then every Shu Zaiqi stream is vertically blown from blowing to penetrate the heat that region is taken away and be less than the concentration of the prior art 1/4, the temperature drop that carrier gas stream blows the liquid-state silicon for penetrating region greatly reduces, and local degree of supercooling reduces, carrier gas in liquid-state silicon Caused impurity forming core probability is reduced, and reduces the formation for the impurity that carrier gas is promoted.By adjusting the exporter of deflecting gas tube To change is emitted the angle (angle of outgoing carrier gas stream and liquid-state silicon surface normal) between carrier gas stream and liquid silicon face, increases The angle can increase the contact area of carrier gas stream and liquid surface, which will be added to the upper of carrier gas flow section product Reciprocal times for stating included angle cosine value；The mode collective effect of this mode and a plurality of deflecting gas tube dispersion delivery of carrier gas, can be effectively The contact area for increasing carrier gas stream and liquid silicon face, takes away carrier gas stream from the unit area for blowing the liquid-state silicon for penetrating region Heat is less.Suitably reduce the angle between outgoing carrier gas stream and liquid silicon face, outgoing carrier gas stream generates liquid-state silicon stronger Driving laminar flow carrier gas stress so that in liquid-state silicon by carrier gas generate flow field enhance.The export direction of deflecting gas tube is adjusted, Make the center line of deflecting gas tube in the tangent line in exit and buffers the folder between the lower end wall surface (being parallel to liquid silicon face) of cavity portion Angle is smaller, such as 30-40 degree, is emitted carrier gas stream and obliquely blows the surface for penetrating liquid-state silicon, carry the list of the liquid-state silicon in air flow blowing and jetting region The load volume contacted in plane product is increased slightly, but is emitted carrier gas stream and is generated biggish driving laminar flow to the liquid-state silicon for penetrating region is blown Carrier gas stress, the flowing of carrier gas stress drive surface layer liquid-state silicon, carrier gas stream blows the region penetrated and divides around the center of liquid-state silicon Cloth, carrier gas stress then form the stronger rotational flow field for making circumferential flow around the central distribution of liquid-state silicon in liquid-state silicon. Rotational flow field is conducive to the Impurity Transport liquid-state silicon surface flotation to the edge of liquid-state silicon, and the impurity for reducing floating is good to crystal The influence of rate improves the yield rate of crystal；It also helps simultaneously and the impurity inside liquid-state silicon is transported to surface, promote impurity Volatilization；Liquid-state silicon is conducive to that matter in liquid-state silicon is miscellaneous to be transported and under the collective effect of free convection flow field and rotational flow field Even distribution avoids impurity local from being enriched with, and the radial resistivity of crystal is more evenly distributed, and the quality of crystal is further enhanced.
In the application, as shown in Fig. 1, Figure 18, guiding device 12 in the prior art includes the graphite-pipe axially assembled 123, match connected nut 121 and diversion pipe 122.The upper end of diversion pipe 122 is equipped with and matches with 121 internal screw thread of connected nut outer Screw thread.The upper end of diversion pipe 122 passes through the through-hole at the middle part of the top insulation board 60 of heat-insulation cage, and setting is on the insulation board 60 of top Side is fastened with connected nut 121, and the internal screw thread 46 on the setting of 122 lower end of diversion pipe and 40 top of guiding device of the present invention matches External screw thread.Guiding device 40 and diversion pipe 122 of the present invention axially fasten connection, guiding device 40 by the internal and external screw thread Lower end protrude into the middle through-hole of the cover board being arranged on crucible guard boards, the carrier gas outlet of the lower end of guiding device 40 is located at Below the cover board, and it is opposite with the silicon material in crucible.Guiding device of the present invention is fit directly into the guiding device of the prior art The lower end of 12 diversion pipe 122, it is only necessary to external screw thread be set on 122 lower end of diversion pipe, it is not necessary that other components are transformed, changed Cause this lower.
Guiding device 40 of the present invention includes air inlet pipe portion 42, buffering cavity portion 41 and deflecting gas tube 43；Air inlet pipe portion 42 is arranged In the inside of buffering cavity portion 41, the underface of buffering cavity portion 41 is arranged in the deflecting gas tube 43 for changing carrier gas flow direction.In addition, described The outside in buffering cavity portion 41, such layout also can be set in air inlet pipe portion 42, and air inlet pipe portion 42 will fill water conservancy diversion of the present invention The visual field led in ingot furnace is set not block, however, it is desirable to the insulation board of steel shell and heat-insulation cage to ingot furnace into Row transformation, difficulty is big, at high cost.Air inlet pipe portion 42 is arranged in the inside of buffering cavity portion 41, air inlet pipe portion in present invention selection Although 42 produce the visual field led in ingot furnace in guiding device and block, the area being blocked is very small, insufficient visual field The a quarter of area, as shown in figure 20, guiding device through the invention, to the insertion watched, survey crystal bar of BF's inner state, red Outer survey meter does not influence the detection of silicon material state in furnace.More importantly, it is not necessary in the Double water-cooled of polycrystalline ingot furnace Steel shell on and the insulation board of heat-insulation cage on open up the perforative through-hole of appendix 50, also simplify appendix 50 and this The connection of invention guiding device is laid out.Although the air inlet pipe portion 42 in guiding device of the present invention leads to casting in guiding device 40 Visual field in ingot furnace, which produces, blocks, but a quarter for the area deficiency visual field area being blocked；Therefore, through the invention Guiding device can see the state of silicon material in furnace from the observation window of furnace roof, and stoker is facilitated to operate；Setting guiding device just on The infrared detecting set of side can detect the state of silicon material in furnace by guiding device, advantageous automatic crystal growing technology successfully into Row；Crystal bar can will be surveyed by guiding device to be inserted into ingot furnace, be convenient for measuring the speed of growth of crystal.
Next for the convenience of description, carrying out unitized processing to the corresponding technical name in three embodiments. The air inlet 213,33, air inlet pipe portion 42 will be commonly referred to as air inlet；Connection air flue 214,34, will be commonly referred to as communicating pipe 44 being connected to Channel；One or two cushion chamber, cushion chamber 35, buffering cavity portion 41 will be commonly referred to as cushion chamber；Water conservancy diversion air flue 36,222, deflecting gas tube 43 It will be commonly referred to as flow-guiding channel.
Tangent line side of the center line of the exit direction of the carrier gas in the exit of flow-guiding channel namely flow-guiding channel in exit To as shown in figure 21, (tangent line is under for angle of the center line of flow-guiding channel between the tangent line and guiding device lower end surface in exit Angle between normal line of butt end) be labeled as β, then the angle between the exit direction of carrier gas stream and liquid-state silicon surface normal is also β；Outgoing Be identified as A at the center of the phase-contact surface of carrier gas stream and liquid silicon face, the exit of flow-guiding channel to liquid silicon face away from From being labeled as h, the center of liquid silicon face is labeled as O, the phase of the center O of liquid silicon face to carrier gas and liquid silicon face The distance between contact surface center A is labeled as a, and the radius of the helix in the exit of flow-guiding channel is labeled as r, then a, r, h, β Between relationship can approximatively express are as follows: tg β=(a-r)/h；The center line that the formula can be used for flow-guiding channel is exporting The design considerations of the tangential direction at place, the i.e. design considerations of the exit direction of carrier gas stream.If desired drive of the liquid-state silicon in carrier gas stream The dynamic lower stronger rotational flow field of generation makes to be emitted carrier gas stream and liquid silicon face phase when designing the outlet port of flow-guiding channel The position of contact as far as possible far from the center of liquid-state silicon, such as in liquid-state silicon center O between liquid-state silicon edge middle position or The partially outer position in the middle position, that is, allow β larger, makes the position center O far from liquid-state silicon as far as possible of A point in Figure 20, and to earthenware Crucible is drawn close.Meanwhile reducing distance of the outlet apart from liquid silicon face of the flow-guiding channel of guiding device, reduce going out for flow-guiding channel The supply gas pressure of sectional area, increase carrier gas at mouthful, the advantageous flow velocity for improving outgoing carrier gas at liquid silicon face, outgoing load Air-to-liquid state silicon generates bigger carrier gas stress, enhances the flowing of liquid-state silicon, generates stronger rotational flow field.
The working principle of guiding device of the present invention is: appendix is transported to carrier gas the air inlet of guiding device of the present invention, Carrier gas flows into the cushion chamber of guiding device through air inlet, and rotates in cushion chamber, then separately flows into from the lower end of cushion chamber In a plurality of equally distributed flow-guiding channel, then from the outgoing of the exit of flow-guiding channel, the carrier gas stream of outgoing, which is obliquely blown, penetrates liquid The surface of silicon.A plurality of flow-guiding channel makes carrier gas dispersedly blow the different zones for penetrating liquid silicon face, effectively increase carrier gas and The contact area of liquid silicon face, the load volume contacted on unit area are reduced.Carrier gas concentration is blown in the prior art and penetrates liquid The central region of silicon face, carrier gas take away a large amount of heat from the region, cause the temperature of the region liquid-state silicon to generate biggish The range of decrease, degree of supercooling enhancing, promotes the impurity supersaturation forming core in the region and generates impurity inclusion.Guiding device of the present invention passes through Flow-guiding channel makes carrier gas be divided into multi beam carrier gas stream, and multi beam carrier gas stream dispersedly blows the different zones for penetrating liquid silicon face, phase respectively Than vertically blowing the mode penetrated in the concentration of carrier gas in the prior art, then connect on the unit area of the liquid-state silicon in load air flow blowing and jetting region The load volume of touching is less, and the heat that carrier gas is taken away from the unit area of the region liquid silicon face is less, and carrier gas stream is blown The range of decrease of the temperature for the liquid-state silicon for penetrating region greatly reduces, and degree of supercooling weakens, to decrease or even eliminate in liquid-state silicon by carrying The impurity supersaturation forming core that gas is promoted is precipitated, and the impurity nucleus growth promoted forms impurity inclusion, advantageous to improve crystalline substance The yield rate and quality for penetrating the crystal at place are blown in the special carrier gas of body.The a plurality of flow-guiding channel of guiding device is in guiding device Heart line is uniformly distributed；The outgoing carrier gas stream in flow-guiding channel exit around the center line of guiding device namely the center of liquid-state silicon, It is uniformly distributed；Outgoing carrier gas stream obliquely blows the surface for penetrating liquid-state silicon, is emitted the area of carrier gas stream and liquid silicon face being in contact Domain is uniformly distributed around the center of liquid-state silicon, and carrier gas stream generates the carrier gas stress of driving laminar flow to the liquid-state silicon for penetrating region is blown, Carrier gas stress is uniformly distributed around the center of liquid-state silicon；The flowing of carrier gas stress drive surface layer liquid-state silicon, and in liquid-state silicon Center portion circumferentially flows, and the stronger rotational flow field for making circumferential flow is formed in liquid-state silicon.Rotational flow field is conducive to liquid The Impurity Transport of silicon face floating reduces influence of the impurity of floating to crystal yield, improves crystal to the edge of liquid-state silicon Yield rate；Meanwhile being conducive to the surface of the Impurity Transport inside liquid-state silicon to liquid-state silicon, accelerate waving for impurity in liquid-state silicon Hair；Liquid-state silicon is conducive to that matter in liquid-state silicon is miscellaneous to be transported and under the collective effect of thermal natural convection flow field and rotational flow field Even distribution avoids impurity local from being enriched with, the radial resistivity of crystal is made to be more evenly distributed, and the electrical property of crystal is optimized, brilliant The quality of body is further enhanced.In addition, being adjusted out by the center line of design flow-guiding channel in the tangential direction in exit The angle between carrier gas stream and liquid silicon face (angle between outgoing carrier gas stream and liquid-state silicon surface normal) β is penetrated, increasing angle β can To increase the contact area of carrier gas stream and liquid silicon face, contact area will be added to (the 1/cos β) times of carrier gas flow section product. Suitably reducing angle β can make to be emitted the carrier gas stress that carrier gas stream generates liquid-state silicon bigger driving laminar flow, so that liquid Enhanced in silicon by the flow field that carrier gas generates.Therefore, increase the contact area of carrier gas stream and liquid silicon face, effective mode is to adopt With the mode phase of the angle between the mode and increase outgoing carrier gas stream and liquid silicon face of a plurality of flow-guiding channel dispersion delivery of carrier gas In conjunction with.
Compared to the prior art, the present invention has the following technical progress.
1) there is the visual field led in ingot furnace, by the way that air inlet platform portion (air inlet pipe portion) setting is being coupled in guiding device In canister portion/water conservancy diversion canister portion (buffering cavity portion), though visual field is blocked, the area deficiency visual field area being blocked four/ One, there is in guiding device the visual field led in ingot furnace；The state in ingot furnace can be successfully watched by guiding device, side Just stoker operates；It is inserted by guiding device and surveys crystal bar, measure the speed of growth of crystal；Infrared detecting set can by guiding device The state of the silicon material in ingot furnace is detected, automatic crystal growing technology can be gone on smoothly.
2) supercooling of local caused by carrier gas in liquid-state silicon is reduced, it is more that multiple flow-guiding channels of guiding device are divided into carrier gas Shu Zaiqi stream, multi beam carrier gas flow point dissipate and obliquely blow the different zones for penetrating liquid silicon face, effectively increase carrier gas and liquid The contact area of silicon face carries the load volume that contacts on the unit area of the liquid-state silicon in air flow blowing and jetting region and reduces, carrier gas stream from The heat taken away on the unit area is reduced, which is reduced by the local temperature drop caused by carrier gas stream, to reduce It even avoids by the local supercooling caused by carrier gas in liquid-state silicon, and the impurity forming core growth promoted.
3) promote impurity volatilization and impurity to be uniformly distributed, improve the quality of crystal, multiple flow-guiding channels of guiding device enclose Center line around guiding device is uniformly distributed, and carrier gas is divided into multi beam carrier gas stream through multiple flow-guiding channels, and carrier gas stream difference is obliquely The different zones for penetrating liquid silicon face are blown, carrier gas stream, which is blown, penetrates the central distribution that region surrounds liquid silicon face, and carrier gas stream is to liquid State silicon generate driving laminar flow carrier gas stress, carrier gas stress drive liquid-state silicon flowing, formed around its center flow rotating flow ?.Rotational flow field is conducive to the Impurity Transport liquid-state silicon surface flotation to liquid-state silicon edge, reduces the impurity of floating to crystal The influence of yield improves the yield rate of crystal；It also helps the surface of the Impurity Transport inside liquid-state silicon to liquid-state silicon, accelerates The volatilization of impurity in liquid-state silicon；Liquid-state silicon is conducive in liquid-state silicon under the collective effect of free convection flow field and rotational flow field Matter is miscellaneous to be transported and being uniformly distributed, and is avoided impurity local from being enriched with, so that crystal radial direction resistivity is more evenly distributed, the quality of crystal obtains To further increasing.
4) guiding device of the present invention does not need to be transformed the steel shell of ingot furnace and the insulation board of heat-insulation cage, change Make at low cost, transformation difficulty is small.
The basic principles, main features and advantages of the present invention have been shown and described above.The technology of the industry Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, the present invention Claimed range is delineated by the appended claims, the specification and equivalents thereof from the appended claims.

Claims (7)

1. a kind of guiding device for polycrystalline ingot furnace, it is characterised in that: including the hollow water conservancy diversion canister portion that is fixedly connected and Air inlet platform portion, the cushion chamber of setting and its concentrically line in the barrel of water conservancy diversion canister portion upper end；It is arranged in air inlet platform portion and uses In the air inlet that carrier gas flows into, by being connected to air flue connection between air inlet and cushion chamber；Setting in the barrel of the water conservancy diversion canister portion At least one water conservancy diversion air flue extended downwardly from the lower end surface of cushion chamber along cylindrical helix, the outlet of water conservancy diversion air flue, which is located at, to be led The lower end in flow cartridge portion.
2. a kind of guiding device for polycrystalline ingot furnace according to claim 1, it is characterised in that: the connection air flue One end with air inlet is tangent is connected to, the other end with the side of cushion chamber is tangent is connected to.
3. a kind of guiding device for polycrystalline ingot furnace according to claim 2, it is characterised in that: the water conservancy diversion canister portion It is integrally formed with air inlet platform portion, the inside of water conservancy diversion canister portion is arranged in air inlet platform portion.
4. a kind of guiding device for polycrystalline ingot furnace according to claim 3, it is characterised in that:
The screw pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, and the outlet of water conservancy diversion air flue is located at the lower end of water conservancy diversion canister portion Face；Alternatively,
The screw pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, radius is gradually increased, and the outlet of water conservancy diversion air flue is located at The lower end of water conservancy diversion canister portion lateral surface or at the lateral surface of water conservancy diversion canister portion and the friendship of lower end surface.
5. a kind of guiding device for polycrystalline ingot furnace according to claim 4, it is characterised in that: the water conservancy diversion air flue Quantity be 3,4 or 5.
6. a kind of guiding device for polycrystalline ingot furnace, feature described in -5 any claims exist according to claim 1 In: internal screw thread or external screw thread of the upper end setting of the water conservancy diversion canister portion of the guiding device along centerline direction.
7. a kind of guiding device for polycrystalline ingot furnace according to claim 6, it is characterised in that: the guiding device Material be graphite or molybdenum.
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