CN105543954B

CN105543954B - A kind of polycrystalline ingot furnace with carrier gas heater

Info

Publication number: CN105543954B
Application number: CN201610082945.1A
Authority: CN
Inventors: 陈鸽; 其他发明人请求不公开姓名
Original assignee: Chongqing Silver Packing Material Co Ltd
Current assignee: Chongqing Boshi Intellectual Property Service Co., Ltd.
Priority date: 2016-02-03
Filing date: 2016-02-03
Publication date: 2017-12-08
Anticipated expiration: 2036-02-03
Also published as: CN107815731A; CN105543954A; CN107699945A; CN107513765A; CN107815731B; CN107513765B

Abstract

The invention discloses a kind of polycrystalline ingot furnace with carrier gas heater, it is used for the drainage system of the delivery of carrier gas into stove in ingot furnace including being assemblied in, also include being used for the heater for heating carrier gas, the output end of the heater is connected with the input of drainage system, and input connects with the appendix of carrier gas.The higher hot carrier gas of temperature is formed after cold carrier gas first heated device heating, the silicon material penetrated in crucible is blown in the hot carrier gas through drainage system；The degree of supercooling blown and penetrate region liquid-state silicon is reduced, reduces and even eliminates the impurity forming core promoted in liquid-state silicon by carrier gas and impurity nucleus growth.

Description

A kind of polycrystalline ingot furnace with carrier gas heater

Technical field

The present invention relates to a kind of polycrystalline ingot furnace, more particularly to a kind of polycrystalline ingot furnace with carrier gas heater, category In crystal growth equipment field.

Background technology

Polycrystalline ingot furnace includes body of heater, heat-insulation cage, heater, heat exchange platform, drainage system.Heater includes heater top With side heater, it is arranged in heat-insulation cage；Heat exchange platform is assemblied in lower furnace body and in heat-insulation cage by graphite column.Fill The crucible of silicon material is placed on heat exchange platform, in the heater of side；Drainage system run through and be assemblied in heat-insulation cage top it is heat-insulated On plate, the central part of the opposite crucible in its lower end outlet, for transporting carrier gas.Ingot furnace is heated using four sides, the face of top surface five, then The temperature of four avris of liquid-state silicon is higher than the temperature at middle part in crucible, the liquid-state silicon for forming four avris is floated, the liquid at middle part The free convection flow field that silicon sinks.The melting degree of some impurity (such as carbon, nitrogen) melted in the higher liquid-state silicon of four avris temperature If reach or close to saturation, when it flows to middle part, because temperature reduces, impurity melting degree reaches supersaturation, will cause impurity Such as carbon, nitrogen forming core separate out；Impurity core forms impurity inclusion as liquid stream sinking temperature declines and progressively grown.Cold carrier gas warp The central area vertically blown and penetrate liquid-state silicon is concentrated in the outlet of drainage system, and carrier gas takes away substantial amounts of heat from the region liquid-state silicon Amount, cause the central area liquid-state silicon temperature further to decline, degree of supercooling enhancing, so as to promote such as carbon of the impurity in liquid-state silicon, The impurity supersaturation such as nitrogen forming core separates out, and promotes impurity nucleus growth to form macroscopical impurity, and be such as carbonized silicon impurities, silicon nitride inclusions. Carbonization silicon impurities have electroactive, influence the transformation efficiency of solar cell.Therefore, it is a kind of with carrier gas heating dress to need exploitation badly The polycrystalline ingot furnace put, after the heated hot carrier gas higher into temperature of cold carrier gas, then the liquid penetrated in crucible is blown by drainage system State silicon, to reduce impurity forming core caused by carrier gas and impurity nucleus growth in liquid-state silicon.

The content of the invention

The purpose of the present invention is to be directed to problems of the prior art, there is provided a kind of polycrystalline with carrier gas heater Ingot furnace.To overcome the problems of in the prior art：The a certain region blown and penetrate liquid silicon face is concentrated in cold carrier gas, such as middle part Region, carrier gas take away substantial amounts of heat from the region, cause the region significantly to cool, and liquid-state silicon supercooling, promote miscellaneous in liquid-state silicon Matter forming core and impurity nucleus growth form impurity inclusion.

The technical scheme is that providing a kind of polycrystalline ingot furnace with carrier gas heater, including it is assemblied in ingot casting It is used for the drainage system of the delivery of carrier gas into stove in stove, its designing points is：Also include being used for the heater for heating carrier gas, The output end of the heater is connected with the input of drainage system, and input connects with the appendix of carrier gas.

In the application, polycrystalline ingot furnace of the present invention also has preferable technical scheme further below.

Preferably, the heater is air heater, and thermal insulation layer, air heating are set in the housing of air heater The output end of device and the input of drainage system are connected by the way that pipeline communication, input is coupled with the appendix of carrier gas；It is described to match somebody with somebody The outside cladding thermal insulation layer in adapter road.

Preferably, the air heater is rib-pipe type air heater.

Preferably, the heater is heating tube, and the heating tube is arranged in the heat-insulation cage of ingot furnace, heating tube The input of output end and drainage system is connected by the way that pipeline communication, input is coupled with the appendix of carrier gas.

Preferably, the roundabout distribution of the heating tube, is arranged between the heater of ingot furnace and heat-insulation cage.

Preferably, the heating tube is finned tube, be arranged at heater heater top and heat-insulation cage top thermal insulation board it Between.

Preferably, the ribbed pipe, the material of heating tube are molybdenum, tungsten or titanium.

Polycrystalline ingot furnace of the present invention carries carrier gas heater, and it is higher to form temperature after cold carrier gas first heated device heating Hot carrier gas, the hot carrier gas is then blown to the silicon material penetrated in crucible through drainage system.When the temperature of carrier gas is less than the temperature of liquid-state silicon When spending, carrier gas from blow penetrate region liquid-state silicon in the heat taken away it is few, the local temperature for the liquid-state silicon for penetrating region is blown in carrier gas The degree range of decrease greatly reduces, and degree of supercooling reduces, and the forming core probability of impurity caused by carrier gas is reduced in liquid-state silicon, reduces and even eliminates The impurity promoted in liquid-state silicon by carrier gas is formed；When the temperature of carrier gas is higher than the temperature for blowing the liquid-state silicon for penetrating region, The liquid-state silicon supplying heat in region is penetrated in carrier gas to blowing, and raises the temperature of the region liquid-state silicon, reduces radial direction in liquid-state silicon Temperature difference, suppress the impurity forming core in the region liquid-state silicon, eliminate the formation for the impurity that carrier gas is promoted, improve the matter of crystal Amount.

The purpose of the present invention is to be directed to problems of the prior art, there is provided one kind is with carrier gas heater and its leads Flow the polycrystalline ingot furnace of device.To overcome the problems of in the prior art：Certain blown and penetrate liquid silicon face is concentrated in cold carrier gas One region, carrier gas produce carrier gas stress to liquid-state silicon, make circumferentially distributed carrier gas stress, liquid along liquid-state silicon center without being formed It is difficult to form rotational flow field in state silicon, is unfavorable for the volatilization of impurity, and be unfavorable for transporting and being uniformly distributed for impurity, causes crystalline substance The radial direction resistivity contrasts of body are big；On the other hand, cold carrier gas takes away substantial amounts of heat from the region, causes the region to cool, leads The supercooling of liquid-state silicon component is caused, promotes impurity forming core and impurity nucleus growth in liquid-state silicon to form impurity inclusion.

A kind of technical scheme of the present invention is to provide a kind of polycrystalline ingot furnace with carrier gas heater and guiding device, Including heat-insulation cage and guiding device, the heat-insulation cage is mainly by side thermal insulation board, top thermal insulation board and the chamber that is formed of bottom thermal insulation board Body, its designing points are：Also include being used for the heater for heating carrier gas；The guiding device is at least by with connect cylinder and water conservancy diversion Cylinder is formed, described to match somebody with somebody connect cylinder portion and air inlet platform portion with what connect cylinder included being fixedly connected, is to be set along its centerline direction with connect cylinder portion The cylinder of through hole is put, air inlet platform portion is arranged on the outside with connect cylinder portion, and the air admission hole of carrier gas inflow is provided in air inlet platform portion, The first branch chamber with its concentrically lower ending opening annular in shape of line is set in the barrel with connect cylinder portion, the air admission hole and the Connected between one branch chamber by connecting air flue；The guide shell is the cylinder that through hole is set along its centerline direction, on guide shell The second branch chamber with its concentrically upper surface opening annular in shape of line, the second branch chamber and first are set in the barrel of end Branch chamber is corresponding；At least one circle from the second branch chamber lower surface along non-uniform pitch is set in the barrel of the guide shell The water conservancy diversion air flue that cylindrical helical line extends downwardly, the outlet of water conservancy diversion air flue is positioned at the lower end of guide shell；The upper end of the guide shell Being connected with connect cylinder axial restraint above thermal insulation board is pushed up with being arranged in portion through the through hole in the middle part of the thermal insulation board of top；The heating dress The output end and the air admission hole of guiding device put are connected by the way that pipeline communication, input is coupled with the delivery pipe of carrier gas.

Preferably, the one end of the connection air flue with air admission hole is tangent connects, the side of the other end and the first branch chamber The tangent connection in face.

Preferably, the heater is air heater, and thermal insulation layer, air heating are set in the housing of air heater The output end of device and the air admission hole of guiding device are connected by the way that pipeline communication, input is coupled with the delivery pipe of carrier gas；It is described to match somebody with somebody The outside cladding thermal insulation layer in adapter road.

Preferably, the air heater is rib-pipe type air heater.

Preferably, the heater is heating tube, and the heating tube is arranged in the heat-insulation cage of ingot furnace, heating tube The air admission hole of output end and guiding device is connected by the way that pipeline communication, input is coupled with the appendix of carrier gas.

Preferably, the heating tube is in roundabout distribution, is arranged between the heater of ingot furnace and heat-insulation cage.

Preferably, the pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, and the outlet of water conservancy diversion air flue, which is located at, to be led The lower surface of flow cartridge；Or

The pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, radius gradually increases, the outlet of water conservancy diversion air flue Lateral surface positioned at the lower end of guide shell lateral surface or positioned at guide shell and at the friendship of lower surface.

Preferably, the quantity of the water conservancy diversion air flue is 2,3 or 4, and the center line around guide shell is uniformly distributed.

Built in the guiding device of polycrystalline ingot furnace of the present invention it is a plurality of to change carrier gas flow direction water conservancy diversion air flue, water conservancy diversion air flue Outlet be angularly uniformly distributed along identical around the center line of guiding device, carrier gas is divided into a plurality of carrier gas through guiding device Stream, a plurality of carrier gas flow point dissipate the different zones obliquely blown and penetrate liquid silicon face, produce the carrier gas around liquid-state silicon central distribution Stress, carrier gas stress drive superficial layer liquid-state silicon flowing, forms the rotational flow field for making circumferential flow in liquid-state silicon.Rotational flow field Be advantageous to the impurity inside liquid-state silicon being transported to surface, promote the volatilization of impurity；Be advantageous to matter in liquid-state silicon it is miscellaneous transport and It is uniformly distributed, the radial direction resistivity of crystal is evenly.The visual field led in the guiding device in ingot furnace is unobstructed, passes through stove The observation window on top can see the state of silicon material in stove, the speed of growth that crystal bar measures crystal is surveyed in insertion；Infrared detecting set can be with Detect the state of silicon material in stove.The higher hot carrier gas of temperature is formed after cold carrier gas first heated device heating, then by the heat The silicon material penetrated in crucible is blown in carrier gas through drainage system.When the temperature of carrier gas is less than the temperature of liquid-state silicon, carrier gas is from Suo Chuishe areas The heat taken away in the liquid-state silicon in domain is few, and the temperature drop of the liquid-state silicon in the region greatly reduces, in liquid-state silicon carrier gas cause Impurity forming core probability reduce, reduce and even eliminate the formation of the impurity that carrier gas is promoted；Blown when the temperature of carrier gas is higher than When penetrating the temperature of the liquid-state silicon in region, the liquid-state silicon supplying heat in region is penetrated in carrier gas to blowing, and makes the temperature of the region liquid-state silicon Rise, the temperature difference of radial direction in liquid-state silicon is reduced, suppresses the impurity forming core in the region liquid-state silicon and impurity nucleus growth.

The another technical solution of the present invention is to provide a kind of polycrystalline cast ingot with carrier gas heater and guiding device Stove, including heat-insulation cage and mozzle, the heat-insulation cage is mainly by side thermal insulation board, top thermal insulation board and the chamber that is formed of bottom thermal insulation board Body, its designing points are：Also include guiding device and the heater for heating carrier gas, the guiding device includes fixing The guide shell portion and air inlet platform portion of connection, guide shell portion are the cylinder that through hole is set along its centerline direction, and air inlet platform portion is set In the outside in guide shell portion；Branch chamber annular in shape with its concentrically line is set in the barrel of guide shell portion upper end； The built-in air admission hole flowed into for carrier gas in air inlet platform portion, is connected between air admission hole and branch chamber by connecting air flue；The guide shell At least one is set to be led from the lower surface of branch chamber along what the cylindrical helix of non-uniform pitch extended downwardly in the barrel in portion Gas road, the outlet of water conservancy diversion air flue is positioned at the lower end in guide shell portion；The mozzle is assemblied on the thermal insulation board of top, and its lower end passes through The through hole in the middle part of thermal insulation board is pushed up, and is stretched out from the lower surface of top thermal insulation board；Guiding device and the mozzle bottom is axially solid Fixed connection；The output end of the heater and the air admission hole of guiding device by being coupled pipeline communication, input and carrier gas Delivery pipe connects.

Preferably, the one end of the connection air flue with air admission hole is tangent connects, the side phase of the other end and branch chamber Cut connection.

Preferably, the heater is air heater, and thermal insulation layer, air heating are set in the housing of air heater The output end of device and the air admission hole of guiding device are used to connect with the appendix of carrier gas by the way that pipeline communication, output end is coupled；Institute State the outside cladding thermal insulation layer of mating pipeline.

Preferably, the air heater is rib-pipe type air heater.

Preferably, the heater is heating tube, and the heating tube is arranged in the heat-insulation cage of ingot furnace, heating tube The air admission hole of output end and guiding device is connected by the way that pipeline communication, output end is coupled with the appendix of carrier gas.

Preferably, the pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, and the outlet of water conservancy diversion air flue, which is located at, to be led The lower surface in flow cartridge portion；Or

The pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, radius gradually increases, the outlet of water conservancy diversion air flue At lateral surface and the friendship of lower surface positioned at the lower end of guide shell portion lateral surface or positioned at guide shell portion.

Preferably, the quantity of the water conservancy diversion air flue is 3,4 or 5, and the center line around guiding device uniformly divides Cloth.

Preferably, the material of the guiding device is graphite or molybdenum.

Built in the guiding device of polycrystalline ingot furnace of the present invention it is a plurality of to change carrier gas flow direction water conservancy diversion air flue, water conservancy diversion air flue Outlet be angularly uniformly distributed along identical around the center line of guiding device, carrier gas is divided into a plurality of carrier gas through guiding device Stream, a plurality of carrier gas flow point dissipate the different zones obliquely blown and penetrate liquid silicon face, and generation is made circumferentially distributed around liquid-state silicon center Carrier gas stress, the flowing of carrier gas stress drive superficial layer liquid-state silicon, formed in liquid-state silicon and make the rotational flow field of circumferential flow.Rotation Turn of tidal stream field is advantageous to the impurity inside liquid-state silicon being transported to surface, promotes the volatilization of impurity；It is miscellaneous to be advantageous to matter in liquid-state silicon Transport and be uniformly distributed, the radial direction resistivity of crystal is evenly.The visual field led in the guiding device in ingot furnace is unobstructed, The state of silicon material in stove can see by the observation window of furnace roof, the speed of growth that crystal bar measures crystal is surveyed in insertion；Infrared acquisition Instrument can detect the state of silicon material in stove.The higher hot carrier gas of temperature is formed after cold carrier gas first heated device heating, then The hot carrier gas is blowed to through drainage system to the silicon material in crucible.When the temperature of carrier gas is less than the temperature of liquid-state silicon, carrier gas is from institute Blow that the heat taken away in the liquid-state silicon for penetrate region is few, the temperature drop of the liquid-state silicon in the region greatly reduces, in liquid-state silicon by Impurity forming core probability caused by carrier gas is reduced, and reduces the formation for even eliminating the impurity that carrier gas is promoted；When the temperature of carrier gas During higher than the temperature for blowing the liquid-state silicon for penetrating region, the liquid-state silicon supplying heat in region is penetrated in carrier gas to blowing, and makes the region liquid The temperature rise of silicon, the temperature difference of radial direction in liquid-state silicon is reduced, suppress the impurity forming core in the region liquid-state silicon and the life of impurity core It is long.

The yet another technique scheme of the present invention is to provide a kind of polycrystalline cast ingot with carrier gas heater and guiding device Stove, including heat-insulation cage and mozzle, the heat-insulation cage is mainly by side thermal insulation board, top thermal insulation board and the chamber that is formed of bottom thermal insulation board Body, its designing points are：Also include guiding device and the heater for heating carrier gas, the guiding device includes shunting Chamber portion, air inlet pipe portion and at least one deflecting gas tube；The branch chamber portion is mainly by madial wall, lateral wall, upper end wall and lower end The airtight cavity annular in shape that wall is formed；Air inlet pipe portion is arranged on the outside of the lateral wall in branch chamber portion, and the one of air inlet pipe portion End is fixed and connected with the lateral wall in branch chamber portion；Cylindrical helix of the deflecting gas tube along non-uniform pitch is distributed in point The lower section in chamber portion is flowed, the upper end of deflecting gas tube connects and fixed with the lower end wall in branch chamber portion, and the bottom of deflecting gas tube is Outlet；The mozzle is assemblied on the thermal insulation board of top, and its lower end passes through the through hole in the middle part of the thermal insulation board of top, and under the thermal insulation board of top End face is stretched out；The guiding device connects with mozzle bottom axial restraint；Output end and the water conservancy diversion dress of the heater The air inlet pipe portion put is connected by the way that pipeline communication, input is coupled with the delivery pipe of carrier gas.

Preferably, the air inlet pipe portion is connected between branch chamber portion by communicating pipe, the one end of the communicating pipe and is entered The tangent connection in tracheae portion and fixation, the other end and the side wall in branch chamber portion be tangent to be connected and fixation.

Preferably, the heater is air heater, and thermal insulation layer, air heating are set in the housing of air heater The output end of device and the air inlet pipe portion of guiding device are used to connect with the appendix of carrier gas by the way that pipeline communication, input is coupled, The outside cladding thermal insulation layer of the mating pipeline.

Preferably, the air heater is rib-pipe type air heater.

Preferably, the heater is heating tube, and the heating tube is arranged in the heat-insulation cage of ingot furnace, heating tube Output end and the air inlet pipe portion of guiding device are connected by the way that pipeline communication, input is coupled with the appendix of carrier gas.

Preferably, the pitch of the helix of the deflecting gas tube outlet section is gradually reduced, and the outlet of deflecting gas tube, which is located at, to be led The lower surface in flow cartridge portion；Or

The pitch of the helix of the deflecting gas tube outlet section is gradually reduced, radius gradually increases, the outlet of deflecting gas tube Positioned at the lower end of the extended surface of branch chamber portion lateral wall or positioned at branch chamber portion lateral wall extended surface outside.

Preferably, the quantity of the deflecting gas tube is 3,4 or 5, and the center line around guiding device uniformly divides Cloth.

Preferably, the material of the guiding device is molybdenum or titanium.

The guiding device of polycrystalline ingot furnace of the present invention sets a plurality of changing the deflecting gas tube of carrier gas flow direction, deflecting gas tube Outlet be angularly uniformly distributed along identical around the center line of guiding device, carrier gas is divided into a plurality of carrier gas through guiding device Stream, a plurality of carrier gas flow point dissipate the different zones obliquely blown and penetrate liquid silicon face, produce circumferentially distributed around liquid-state silicon center Carrier gas stress, the flowing of carrier gas stress drive superficial layer liquid-state silicon, formed in liquid-state silicon and make the rotational flow field of circumferential flow.Rotation Turn of tidal stream field is advantageous to the impurity inside liquid-state silicon being transported to surface, promotes the volatilization of impurity；It is miscellaneous to be advantageous to matter in liquid-state silicon Transport and be uniformly distributed, the radial direction resistivity of crystal is evenly.The visual field led in the guiding device in ingot furnace is unobstructed, The state of silicon material in stove can see by the observation window of furnace roof, the speed of growth that crystal bar measures crystal is surveyed in insertion；Infrared acquisition Instrument can detect the state of silicon material in stove.The higher hot carrier gas of temperature is formed after cold carrier gas first heated device heating, then The hot carrier gas is blowed to through drainage system to the silicon material in crucible.When the temperature of carrier gas is less than the temperature of liquid-state silicon, carrier gas is from institute Blow that the heat taken away in the liquid-state silicon for penetrate region is few, the temperature drop of the liquid-state silicon in the region greatly reduces, in liquid-state silicon by Impurity forming core probability caused by carrier gas is reduced, and reduces the formation for even eliminating the impurity that carrier gas is promoted；When the temperature of carrier gas During higher than the temperature for blowing the liquid-state silicon for penetrating region, the liquid-state silicon supplying heat in region is penetrated in carrier gas to blowing, and makes the region liquid The temperature rise of silicon, the temperature difference of radial direction in liquid-state silicon is reduced, suppress the impurity forming core in the region liquid-state silicon and the life of impurity core It is long.

Beneficial effect

The local supercooling caused by carrier gas in liquid-state silicon is decreased or even eliminated, it is cold by setting the heater of carrier gas First heated device is thermally formed hot carrier gas for carrier gas, then hot carrier gas is blown and penetrates liquid-state silicon；When the temperature of hot carrier gas is less than liquid-state silicon Temperature when, carrier gas from blow penetrate region liquid-state silicon in the heat taken away greatly reduce, the temperature drop of the region liquid-state silicon is big Width reduces, and degree of supercooling reduces, and the forming core probability of impurity caused by carrier gas is reduced in liquid-state silicon, and reduction even eliminates carrier gas and promoted The impurity entered is formed；When the temperature of hot carrier gas is higher than the temperature of liquid-state silicon, the liquid-state silicon supply heat in region is penetrated in carrier gas to blowing Amount, raises the temperature of liquid-state silicon, reduces the temperature difference of radial direction in liquid-state silicon, suppresses the impurity forming core in the region liquid-state silicon, The formation for the impurity that carrier gas is promoted is eliminated, improves the quality of crystal.

There is the visual field led in ingot furnace in the observation window of furnace roof, pass through the air inlet platform portion (air inlet pipe guiding device Portion) the outside with connect cylinder portion/guide shell portion (branch chamber portion) of guiding device is arranged on, lead in guiding device inside ingot furnace Visual field do not block；The situation that can be watched in ingot furnace by the observation window of furnace roof, facilitates stoker to operate；Crystal bar is surveyed to may pass through Guiding device is inserted into ingot furnace, and the speed of growth of crystal is convenient for measuring；Infrared detecting set passes through the detectable ingot furnace of observation window The state of interior silicon material, automatic crystal growing technology are smoothed out.

The local temperature drop in liquid-state silicon caused by carrier gas is further reduced, multiple flow-guiding channels of guiding device make carrier gas point Into multi beam carrier gas stream, multi beam carrier gas flow point, which dissipates, obliquely blows the different zones of penetrating liquid silicon face, effectively increase carrier gas and The contact area of liquid silicon face, the heat that carrier gas stream is taken away from the unit area are further reduced, caused by carrier gas stream Local temperature drop reduce, further reduce even avoiding local temperature drop in liquid-state silicon caused by carrier gas.

Promote impurity volatilization and impurity to be uniformly distributed, improve the quality of crystal, multiple flow-guiding channels of guiding device surround The center line of guiding device is uniformly distributed, and carrier gas is divided into multi beam carrier gas stream through flow-guiding channel, and carrier gas stream obliquely blows respectively penetrates liquid The different zones of state silicon face, carrier gas stream, which blows, penetrates the central distribution that region surrounds liquid silicon face, and carrier gas is miscarried to liquid-state silicon The carrier gas stress of raw driving laminar flow, carrier gas stress drive liquid-state silicon flowing, form the rotational flow field around its center flow.Rotation Flow field is advantageous to, the Impurity Transport of liquid-state silicon surface flotation to liquid-state silicon edge, reduce shadow of the impurity to crystal yield of floating Ring, improve the yield rate of crystal；Also help the surface of the Impurity Transport inside liquid-state silicon to liquid-state silicon, accelerate in liquid-state silicon The volatilization of impurity；Liquid-state silicon is advantageous to miscellaneous defeated of matter in liquid-state silicon under the collective effect of free convection flow field and rotational flow field Transport and be uniformly distributed, avoid impurity local from being enriched with, crystal radial direction resistivity is more evenly distributed, the quality of crystal obtains further Improve.

Brief description of the drawings

A kind of structural representation of the polycrystalline ingot furnace of Fig. 1 embodiments 1.

Another structural representation of the polycrystalline ingot furnace of Fig. 2 embodiments 1.

The enlarged diagram in heat-insulation cage region in Fig. 3 Fig. 2.

A-A directions view in Fig. 4 Fig. 3.

A kind of structural representation of the polycrystalline ingot furnace of Fig. 5 embodiments 2.

The enlarged diagram of a-quadrant in Fig. 6 Fig. 5.

The structural representation of Fig. 7 guiding devices 20.

Fig. 8 matches somebody with somebody the structural representation of connect cylinder 21.

B-B directions view in Fig. 9 Fig. 8.

Match somebody with somebody the left view view of connect cylinder 21 in Figure 10 Fig. 8.

The elevational schematic view of Figure 11 guide shells 22.

Another structural representation of Figure 12 guide shells 22.

C-C directions view in Figure 13 Figure 12.

A kind of structural representation of the polycrystalline ingot furnace of Figure 14 embodiments 3.

The enlarged diagram of B area in Figure 15 Figure 14.

A kind of structural representation of Figure 16 guiding devices 30.

E-E directions view in Figure 17 Figure 16.

The left view view of guiding device 30 in Figure 18 Figure 16.

The elevational schematic view of guiding device 30 in Figure 19 Figure 16.

Another structural representation of Figure 20 guiding devices 30.

F-F directions view in Figure 21 Figure 20.

A kind of structural representation of the polycrystalline ingot furnace of Figure 22 embodiments 4.

The enlarged diagram in C regions in Figure 23 Figure 22.

A kind of structural representation of Figure 24 guiding devices 40.

G-G directions view in Figure 25 Figure 24.

In figure, 11- bodies of heater, 12- drainage systems, 13- cages, 131- elevating screws, 14- heat-insulation cages, 15- heaters, 16- Exchange heat platform, 17- graphite columns, 18- crucibles, 19- silicon materials, 90- infrared detecting sets, 50- appendixs, 20,30,40- water conservancy diversion dress Put, 60- heaters, 61 mating pipelines, 111- upper furnace bodies, 112- lower furnace bodies, 113- top end covers, 114- observation windows, 121- matches somebody with somebody Connected nut, 122- mozzles, 123- graphite-pipes, 141- sides thermal insulation board, 142- tops thermal insulation board, 143- bottoms thermal insulation board, 151- sides add Hot device, 152- heater tops, 181- graphite bottom plates, 182- graphite protective plates, 183- cover plates, 21- match somebody with somebody connect cylinder, 22- guide shells, 222, 36- water conservancy diversion air flues, 217,37,46- internal threads, 224- external screw threads, 223- flanges, 211- matches somebody with somebody connect cylinder portion, 212,32- air inlet platforms Portion, 213- air admission holes, 214,34- connection air flue, 216- ring-shaped steps, the branch chambers of 215- first, the branch chambers of 221- second, 31- Guide shell portion, 35- branch chambers, 41- branch chambers portion, 42- air inlet pipe portions, 43- deflecting gas tubes, 44- communicating pipes, 45- fastening parts.

Embodiment

In order to illustrate technical scheme and technical purpose, below in conjunction with the accompanying drawings and embodiment is to the present invention It is described further.

Embodiment 1

A kind of polycrystalline ingot furnace with carrier gas heater of the present invention, as shown in Figure 1 and Figure 2, the polycrystalline ingot furnace Including ingot casting furnace body 10 and for heating the heater 60 of carrier gas, heater 60 is connected with ingot casting furnace body 10, uses It is transported in the hot carrier gas after heating inside ingot furnace, blows the silicon material 19 penetrated in crucible, carrier gas in silicon material 19 again volatilizes Impurity be carried to outside stove, to improve the degree of purity of crystal and quality.

The ingot casting furnace body 10 includes body of heater 11, cage 13, elevating screw 131, heat-insulation cage 14, heater 15, heat exchange Platform 16, graphite column 17, graphite-pipe 123, drainage system 12, infrared detecting set 90 and copper electrode (being not drawn into figure).Body of heater 11 include upper furnace body 111, lower furnace body 112 and top end cover 113, and the upper furnace body 111 is covered on lower furnace body 112, top end cover 113 Cover the top end opening in upper furnace body 111.The middle part of top end cover 113 is provided with observation window 114.6 copper electrodes are assemblied in upper furnace body On 111 furnace roof, the surrounding of the top end opening of body of heater is distributed in, and fix with furnace roof insulated enclosure.The cage 13 is by 4 surface sides Ledge is formed, top surface and bottom surface opening.Cage 13 is arranged in body of heater 11, and upper furnace body 111 is hung on by elevating screw 131 Furnace roof.The heat-insulation cage 14 be by four surface side thermal insulation boards 141, one side top thermal insulation board 142 and while the side that forms of bottom thermal insulation board 143 Shape cavity.The heat-insulation cage 14 is arranged in cage 13, and four surface side thermal insulation boards 141 of heat-insulation cage 14 are separately fixed at cage 13 The inner side of four sides side wall frame, top thermal insulation board 142 are suspended on by the limited step on copper electrode on the furnace roof of upper furnace body 111, and In four surface side thermal insulation boards 141, bottom thermal insulation board 143 is assemblied in lower furnace body 112 by the ring-shaped step at the middle part of graphite column 17 The top of furnace bottom.Heater 15 includes side heater 151 and heater top 152, and heater 15 is arranged in heat-insulation cage 14.Side adds Hot device 151 is arranged on the inwall side of the side thermal insulation board 141 of heat-insulation cage, is spaced 4-12cm therebetween；Heater top 15 is arranged on heat-insulated The lower end surface side of the top thermal insulation board 142 of cage, is spaced 5-15cm therebetween.Heater 15 and the copper being fixed on the furnace roof of upper furnace body 111 Electrode is respectively fixedly connected with.Heat exchange platform 16 is located inside heat-insulation cage 14, and heat exchange platform 16 is assembled by three graphite columns 17 On the furnace bottom of lower furnace body 112, and the top of the bottom thermal insulation board 143 positioned at heat-insulation cage 14.Placed on heat exchange platform 16 square Graphite bottom plate 181, crucible 18 is placed on graphite bottom plate 181, four avris of graphite bottom plate 181 uprightly place 4 blocks of graphite respectively The lateral wall of backplate 182, graphite protective plate 182 and crucible 18 fits, and is fixed between adjacent two pieces of graphite protective plates 182 using bolt. Square cover plate 183 is covered on the upper surface of graphite protective plate 182, the middle part of cover plate 183 is provided with the through hole for delivery of carrier gas.Cause This, the graphite bottom plate 181, graphite protective plate 182, cover plate 183 form quadrangle box, and positioned at the inside of heater 15.It is described Drainage system 12 include axially be sequentially connected graphite-pipe 123, with connected nut 121 and drainage tube 122.The upper end of drainage tube 122 The external screw thread that portion is provided with and is engaged with the internal thread of connected nut 121.The upper end of drainage tube 122 is heat-insulated through the top of heat-insulation cage 14 The through hole at the middle part of plate 142, and it is arranged on being fastened with connected nut 121 for the top of top thermal insulation board 142.The graphite-pipe 123 assembles In between connected nut 121 and the observation window 114 of top end cover 113.Infrared detecting set 90 is fixed on top end cover 113, bottom Viewed straight-on of popping one's head in window 114.

The heater 60 is air heater, as shown in figure 1, being arranged on the outside of ingot casting furnace body 10.Air adds The structure ecto-entad of hot device is followed successively by the pipeline of housing, thermal insulation layer, heating member and the roundabout shape for carrier gas of circulating.The pipeline is Outside is provided with the ribbed pipe of fin, can also use light pipe；The pipeline section for ellipse, can also rectangle, to increase heat-transfer surface Product, strengthens by thermal effect, i.e. air heater is rib-pipe type air heater.The housing is steel construction, the material of thermal insulation layer For carbon fiber felt, the material of heating member is graphite or tungsten filament；The material of ribbed pipe is molybdenum or tungsten or titanium, so that Carrier gas can be heated to 1500 DEG C of high temperature, and carrier gas is not contaminated.One end of pipeline is set to the output end of air heater, The other end is the input of air heater.The output end of the air heater and the upper end of drainage system 12 of ingot furnace lead to Cross mating pipeline 61 to connect, as shown in figure 1, the input of air heater connects with the appendix 50 of carrier gas.The adapting pipe The material in road 61 is molybdenum, outside cladding thermal insulation layer, to reduce the heat losses of carrier gas.

The heater 60 can also be heating tube, and as shown in Figure 2,3, 4, heating tube is arranged in heat-insulation cage, position Between the heater top of heater and the top thermal insulation board of heat-insulation cage, pass through the load in the passive heating tube of absorptive thermal radiation energy Gas.The roundabout distribution of heating tube, it is preferable that extend along snail line and be distributed, as shown in Figure 4.Wherein, heating tube is located at spiral shell The one end for revolving shape center is the output end of heating tube, is the input of heating tube positioned at one end of helical form avris, can also adopt With U-shaped roundabout distribution, U-shaped roundabout distribution can destroy the symmetry in former temperature field, influence crystal normal growth, not frequently with.Add Heat pipe is distributed along snail line, is advantageous to maintain the symmetry in temperature field, reduces heating tube to former temperature profile effect, it is ensured that Crystal normal growth.In order to increase by thermal effect, the section of heating tube is ellipse, can also rectangle；Further heating The outside of pipe sets fin, to increase the heating surface area of heating tube, the efficiency of heating surface of the enhancing heating tube to carrier gas.Drainage system 12 Drainage tube 122 side wall on the through hole that may pass through of mating pipeline 61 is set, as shown in figure 3, mating pipeline 61 is L-shaped pipe Road, it is extend into drainage system 12 through the above-mentioned through hole in the side wall of drainage tube 122, exports arrangement downwards.The heating The material of pipe and mating pipeline 61 is molybdenum or tungsten or titanium.The output end of the heating tube is real by the mating pipeline 61 Now it is connected with drainage system 12, the input of heating tube connects with the appendix 50 of carrier gas.

The polycrystalline ingot furnace of present embodiment carries carrier gas heater, and temperature is formed after the cold heated device heating of carrier gas Higher hot carrier gas, the hot carrier gas is blown to the silicon material penetrated in crucible through drainage system.Hot carrier gas is to the temperature field in liquid-state silicon Disturb small, be not easy to make constitutional supercooling occurs in liquid-state silicon, suppress the impurity supersaturation forming core in liquid-state silicon and impurity nucleus growth, The impurity generation in crystal is reduced, improves the quality of crystal.When the temperature of carrier gas is less than the temperature of liquid-state silicon, carrier gas is from being blown Penetrate in the liquid-state silicon of region that the heat taken away is few, carrier gas, which is blown, penetrates the local temperature drop of region liquid-state silicon and greatly reduce, and is subcooled Degree reduces, and the forming core probability of impurity caused by carrier gas is reduced in liquid-state silicon, reduces and even eliminates the impurity that carrier gas is promoted Formed；When the temperature of carrier gas is higher than the temperature for penetrating region liquid-state silicon is blown, the liquid-state silicon supply heat in region is penetrated in carrier gas to blowing Amount, raises the temperature of the region liquid-state silicon, reduces the temperature difference of radial direction in liquid-state silicon, suppresses the impurity in the region liquid-state silicon Forming core, the formation for the impurity that carrier gas is promoted is eliminated, improve the quality of crystal.

Embodiment 2

Embodiment 2 and embodiment 1 differ only in：Guiding device 20 is provided with polycrystalline ingot furnace, as Fig. 5, Shown in Fig. 6, guiding device 20 is used to carrier gas be divided into multi beam outgoing carrier gas stream, and outgoing carrier gas stream obliquely blows respectively penetrates liquid-state silicon The different zones on surface, the carrier gas stress around liquid-state silicon central distribution being formed, carrier gas stress drive liquid-state silicon flows, and in liquid The rotational flow field for making circumferential flow is formed in state silicon.The outside of guiding device 20 is provided with the air admission hole 213 that carrier gas flows into.Heating dress Put 60 and use above-mentioned air heater, then the air admission hole 213 of the output end of air heater and guiding device 20 passes through adapting pipe Road 61 is connected and (is not drawn into figure), and input connects with the appendix 50 of carrier gas；The outside cladding of the mating pipeline 61 is heat-insulated Layer, to reduce the heat losses of carrier gas.Heater 60 can also use above-mentioned heating tube, then the output end of heating tube by with Adapter road 61 is connected with the air admission hole 213 of guiding device 20, and input connects with the appendix 50 of carrier gas；61, pipeline is coupled In the outside cladding thermal insulation layer of the top upper section of thermal insulation board 142.

Wherein, the guiding device 20 includes matching somebody with somebody connect cylinder 21 and guide shell 22, as shown in Figure 6, Figure 7, described to match somebody with somebody connect cylinder 21 Bottom set internal thread 217, the upper end of guide shell 22 is provided with external screw thread 224；Internal thread 217 and water conservancy diversion with connect cylinder 21 The external screw thread 224 of cylinder 22 is engaged.The middle part of guide shell 22, which is provided with, does the flange 223 that circumferentially extends along its outer surface, as Fig. 7, Shown in Figure 12, flange 223 surround 22 outer surface of guide shell one week, and raised knot annular in shape is formed on the surface of guide shell 22 Structure, play spacing, fixation.In assembling, upper end the leading to through the middle part of top thermal insulation board 142 of heat-insulation cage 14 of guide shell 22 Hole, and be arranged on the top top of thermal insulation board 142 with the axially assembling of connect cylinder 21, with connect cylinder 21 and guide shell 22 by above-mentioned, External screw thread 217,224 is fastenedly connected.Guide shell 22 is fixed on the thermal insulation board 142 of top with connect cylinder 21 and the collective effect of flange 223, As shown in Figure 6.The graphite-pipe 123 is assemblied in between connect cylinder 21 and the observation window 114 of top end cover 113.It is described to match somebody with somebody connect cylinder 21 Material with guide shell 22 is graphite, is preferentially isostatic pressing formed graphite, or the higher metal molybdenum of cost or titanium.

Wherein, it is described to match somebody with somebody connect cylinder 21, as shown in Figure 8, Figure 9, including with connect cylinder portion 211 and air inlet platform portion 212, with connect cylinder portion 211 be that middle part is provided with cylinder with its concentrically through hole of line, and as cylinder, the top with connect cylinder portion 211 sets internal diameter big In the counterbore of the through hole, concentrically line, the counterbore and through hole collective effect make the top with connect cylinder portion 211 for the counterbore and through hole Form ring-shaped step 216.The ring-shaped step 216 is used to assemble the graphite-pipe 123 for being used for transporting carrier gas in the prior art, such as schemes Shown in 6.First branch chamber 215 of lower ending opening is set in the barrel with connect cylinder portion 211, and the first branch chamber 215 is around mating The cylinder portion 211 center line chamber annular in shape of one week, the first branch chamber 215 and with the concentrically line of connect cylinder portion 211, such as Fig. 8, Fig. 9 Shown, the first branch chamber 215 is located at the lower section of ring-shaped step 216.The bottom with connect cylinder portion 211 sets above-mentioned interior spiral shell Line 217, positioned at the lower section of the first branch chamber 215.The internal thread 217 extends along the centerline direction with connect cylinder portion 211, and and With the concentrically line of connect cylinder portion 211, as shown in Figure 8.The air inlet platform portion 212 is arranged on the outside with connect cylinder portion 211, such as Fig. 9, figure Shown in 10, air inlet platform portion 212 and it is integrally formed with connect cylinder portion 211, avoids graphite material part from being not easy the problem being fixedly connected.Institute State the air admission hole 213 that carrier gas inflow is provided in air inlet platform portion 212, the axial line of air admission hole 213 and the axle with connect cylinder portion 211 Line is perpendicular, tangent between the air admission hole 213 and the first branch chamber 215 to connect as described in Fig. 9, Figure 10, and is arranged on first point The left side of chamber 215 is flowed, shown in Figure 10, so that the carrier gas stream inflow (seen from above) in a clockwise direction in air admission hole 213 In first branch chamber 215.The axial line of the air admission hole 213 parallel with the axis with connect cylinder portion 211 (can also not drawn in figure Go out), according to assembling needs, the opening upwards of air admission hole 213 are set, can also be down-set, the branch chamber of air admission hole 213 and first Need to connect by connecting air flue between 215；It is described connection air flue arrange along clockwise direction (it is seen from above, do not drawn in figure Go out), connect the one end of air flue and air admission hole 213 is tangent connects, the tangent company of side wall of the other end and the first branch chamber 215 Logical, the carrier gas stream in the connection air flue flows into the first branch chamber 215 in a clockwise direction, in the first branch chamber 215 Carrier gas is being flowed in a clockwise direction.

Wherein, the guide shell 22 is that middle part is provided with cylinder with its concentrically through hole of line, as cylinder.Guide shell 22 upper ends set above-mentioned external screw thread 224, and as shown in Fig. 7,12, the external screw thread 224 and above-mentioned internal thread 217 are engaged.Lead Second branch chamber 221 of upper surface opening is set in the barrel of the upper end of flow cartridge 22, and the second branch chamber 221 is around guide shell 22 The center line chamber annular in shape of one week, as shown in Fig. 7, Figure 12.The external screw thread 224 is nested in the outer of the second branch chamber 221 The outside of side wall.Second branch chamber 221, external screw thread 224 and guide shell 22 concentrically line.The He of second branch chamber 221 First branch chamber 215 is corresponding, i.e., the upper end open of the second branch chamber 221 and the lower ending opening of the first branch chamber 215 are just relative.Institute State and 4 water conservancy diversion air flues 222 are set in the barrel of guide shell 22, as shown in Fig. 9, Figure 11,4 water conservancy diversion air flues 222 are around water conservancy diversion The center line of cylinder 22 is uniformly distributed, as shown in Figure 9.Water conservancy diversion air flue 222 can also be 2 or 3 or more than 5.The water conservancy diversion gas Road 222 extends downwardly from the lower surface of the second branch chamber 221 along columned helix, i.e. the center of water conservancy diversion air flue 222 Line extends downwardly along hand of helix, and is overlapped with the helix.The non-uniform pitch of helix, upper end pitch length under The pitch of end is short, and the pitch of water conservancy diversion air passage outlet section is most short；Helix is located in the barrel of guide shell 22, along clockwise direction Rotation is identical with the direction that carrier gas stream in air admission hole 213 is flowed into the first branch chamber 215 (when seen from above), helix With the concentrically line of guide shell 22.The import of the upper end of water conservancy diversion air flue 222 connects with the lower surface of the second branch chamber 221, water conservancy diversion The outlet of the bottom of air flue 222 is positioned at the lower end of guide shell 22, as shown in Fig. 7, Figure 12.

The air admission hole 213 with the first branch chamber 215 is tangent connects, seamlessly transitted in connectivity part.Load can so be reduced The logical resistance of air-flow, makes carrier gas keep higher kinetic energy, and into first and second branch chamber 215,221, carrier gas is in first and second shunting Intracavitary rotates, and has longer flow, is advantageous to carrier gas and relatively evenly flows into water conservancy diversion air flue 222.Carrier gas passes through the air admission hole 213rd, the one or two branch chamber 215,221 and water conservancy diversion air flue 222 flow along identical direction of rotation, the run into circulation of carrier gas circulation Resistance is smaller, and kinetic energy loss is less, and the exit that carrier gas flows to water conservancy diversion air flue 222 still has higher energy so that carrier gas has There are higher exit velocities, outgoing carrier gas stream produces larger carrier gas stress to liquid-state silicon, helps lend some impetus to the liquid of superficial layer Silicon is flowed, and stronger rotational flow field is produced in liquid-state silicon.

Pass through the pitch and radius of the helix for changing the outlet section of water conservancy diversion air flue 222, the outlet position of design water conservancy diversion air flue 222 In the position of the bottom of guide shell 22, and the exit direction of the carrier gas stream in the exit of the water conservancy diversion air flue 222, namely water conservancy diversion The tangential direction of the center line in the exit of air flue 222.The pitch of the helix of the outlet section of the water conservancy diversion air flue 222 gradually subtracts It is small, when radius is constant, the outlet of water conservancy diversion air flue 222 is on the lower surface of guide shell 22, as shown in figure 11, water conservancy diversion air flue 222 Exit the tangent line (i.e. the exit direction of carrier gas) of center line and the lower surface of guide shell 22 (parallel to liquid silicon face) Between angle (angle between tangent line dough-kneading method line) gradually increase, carrier gas stress of the outgoing carrier gas stream to liquid-state silicon is reduced by wash rice； When the exit of water conservancy diversion air flue 222 pitch close to the hole of water conservancy diversion air flue 222 internal diameter when, the exit of water conservancy diversion air flue 222 Angle between the tangent line and the lower surface of guide shell 22 (parallel to liquid silicon face) of center line is close to 90 degree, i.e. water conservancy diversion air flue 222 The tangent line of exit center line and the lower surface of guide shell 22 are now emitted carrier gas stream and liquid silicon face close to flat close to parallel OK, it is minimum to be emitted carrier gas stress of the carrier gas stream to liquid-state silicon.Furthermore it is also possible to which base area needs, change water conservancy diversion air flue 222 and export Section helix pitch and radius, be gradually reduced the pitch of the helix of the outlet section of water conservancy diversion air flue 222, radius it is gradual Increase, then water conservancy diversion air flue 222 outlet positioned at the lateral surface of guide shell 22 lower end, can also be located at guide shell 22 lateral surface and At the friendship of lower surface, as shown in Figure 12,13, to facilitate the export direction of design water conservancy diversion air flue 222, optimization outgoing carrier gas stream is in liquid Blowing on state silicon face penetrates region, in the case where nebulizer gas pressure determines, makes to produce stronger rotational flow field in liquid-state silicon.

Air inlet platform portion 212 is arranged on the outside with connect cylinder portion 211 by present embodiment, is led in guiding device in ingot furnace Visual field do not block.The observation window 114 of furnace roof has the visual field led in ingot furnace through guiding device 20, and operating personnel pass through Observation window 114, guiding device 20 can see the state of silicon material in stove, facilitate stoker to operate；It is fixed on the top of observation window 114 Infrared detecting set 90 can detect the state of silicon material in stove by observation window, guiding device, and automatic crystal growing technology is successfully entered OK；Crystal bar can will be surveyed by guiding device to be inserted into ingot furnace, rate of crystalline growth is convenient for measuring.

Built-in 4 of the guiding device 20 of present embodiment polycrystalline ingot furnace changing the water conservancy diversion air flue of carrier gas flow direction, Water conservancy diversion air flue is distributed around the center line of guiding device, the outlet of water conservancy diversion air flue around guiding device center line along identical It is angular be uniformly distributed, as shown in figure 13.4 water conservancy diversion air flues of the carrier gas through guiding device are divided into 4 carrier gas streams, 4 carrier gas Stream dispersedly blows 4 regions for penetrating liquid silicon face respectively, and 4 regions suitably subtract around the central distribution of liquid-state silicon Angle between small outgoing carrier gas stream and liquid silicon face, preferably 30-40 degree, make outgoing carrier gas stream obliquely blow and penetrate liquid-state silicon Surface, outgoing carrier gas stream produce the carrier gas stress of larger driving laminar flow to liquid-state silicon, and carrier gas stress is in liquid-state silicon The heart is distributed, the flowing of carrier gas stress drive superficial layer liquid-state silicon, and the rotational flow field for making circumferential flow is formed in liquid-state silicon.Rotation Flow field is advantageous to the Impurity Transport liquid-state silicon surface flotation to the edge of liquid-state silicon, reduces the impurity of floating to crystal yield Influence, improve the yield rate of crystal；Also help simultaneously and the impurity inside liquid-state silicon is transported to surface, promote waving for impurity Hair；Liquid-state silicon is advantageous to that matter in liquid-state silicon is miscellaneous to be transported and uniformly under the collective effect of free convection flow field and rotational flow field Distribution, evenly, the quality of crystal is further enhanced the radial direction resistivity of crystal.Guiding device makes carrier gas dispersedly blow to penetrate The different zones of liquid silicon face, effectively increase the contact area of carrier gas stream and liquid silicon face, contacted in unit area Load volume reduce, then carrier gas penetrates in the liquid-state silicon of region that the heat taken away is few, and the regional temperature range of decrease is small, liquid-state silicon group from blowing Divide degree of supercooling to reduce, carrier gas can be efficiently reduced and blow the impurity forming core penetrated in the liquid-state silicon of region and impurity nucleus growth.

Embodiment 3

Embodiment 3 and embodiment 1 differ only in：Polycrystalline ingot furnace is built-in with guiding device 30, such as Figure 14, figure Shown in 15, the bottom axial restraint of drainage tube 122 of guiding device 30 and drainage system 12.The guiding device 30 is used for load Qi leel is emitted carrier gas stream into multi beam, and outgoing carrier gas stream obliquely blows the different zones for penetrating liquid silicon face respectively, and formation surrounds liquid The circumferentially distributed carrier gas stress in state silicon center, the flowing of carrier gas stress drive liquid-state silicon, formed in liquid-state silicon and make circumferential flow Rotational flow field.The outside of guiding device 30 sets the air admission hole 33 that carrier gas flows into.Heater 60 is used and is arranged in heat-insulation cage Above-mentioned heating tube, then the output end of heating tube be connected by the way that pipeline 61 is coupled with the air admission hole 33 of guiding device 30, input End connects with the appendix 50 of carrier gas.Heater 60 can also use the output of above-mentioned air heater, then air heater End is connected with the air admission hole 33 of guiding device 30 by the way that pipeline 61 is coupled, and input connects with the appendix 50 of carrier gas；It is described to match somebody with somebody Adapter road 61 is located at the outside cladding thermal insulation layer of the part outside body of heater, to reduce the heat losses of carrier gas.

Wherein, the guiding device 30, as shown in Figure 16, Figure 17, including guide shell portion 31 and air inlet platform portion 32, guide shell The material in portion 31 and air inlet platform portion 32 is the relatively low graphite of price, it is therefore preferable to which isostatic pressing formed graphite or cost are higher Molybdenum or titanium.The guide shell portion 31 is provided with the cylinder along centerline direction through hole for middle part, during the through hole and guide shell portion 31 are total to Heart line, the upper end in guide shell portion 31 are provided for the internal thread 37 being fixedly connected, center line of the internal thread 37 along guide shell portion 31 Direction extends, and can also set external screw thread as needed.Set circumferentially in the barrel of the upper end of guide shell portion 31 Branch chamber 35, branch chamber 35 is around the 31 center line airtight chamber annular in shape of one week of guide shell portion, and branch chamber 35 is located at The lower section of the internal thread 37, and with the concentrically line of guide shell portion 31.The air inlet platform portion 32 is arranged on the outer of guide shell portion 31 Portion, as shown in figure 17, guide shell portion 31 and air inlet platform portion 32 are integrally formed, and avoid graphite material part from being not easy the difficulty being fixedly connected Topic.It is provided for the air admission hole 33 of carrier gas inflow in the air inlet platform portion 32, the axial line of air admission hole 33 and guide shell portion 31 Axial line is perpendicular, air admission hole 33 with the side wall of branch chamber 35 is tangent connects, as shown in figure 17, and make smooth place in connectivity part Reason, to reduce the resistance of carrier gas circulation.The opening of air admission hole 33 is located at left side, as shown in Figure 17, Figure 18, so that in air admission hole 33 Carrier gas stream along clockwise direction in inflow branch chamber 35 (seen from above), flow along clockwise direction in branch chamber 35 by carrier gas It is dynamic.The axial line of the air admission hole 33 can also (being not drawn into figure) parallel with the axial line in guide shell portion 31, according to assembling Need, the opening upwards of air admission hole 33 are set, can also be down-set, are connected between air admission hole 33 and branch chamber 35 by connecting air flue It is logical；The connection air flue arranges (seen from above, to be not drawn into figure) along clockwise direction, connects one end and the air inlet of air flue 33 tangent connection of hole, the other end with the side of branch chamber 35 is tangent connects, the carrier gas stream in the connection air flue is with up time Pin direction is flowed into branch chamber 35.

4 water conservancy diversion air flues 36 are set in the barrel in the guide shell portion 31, and water conservancy diversion air flue 36 is around guide shell portion 31 Center line is uniformly distributed, as shown in Figure 17,19,21.The water conservancy diversion air flue 36 is from the lower surface of branch chamber 35 along cylindric spiral shell Spin line extends downwardly, i.e. the center line of water conservancy diversion air flue 36 extends downwardly along hand of helix, and is overlapped with the helix.It is described The non-uniform pitch of helix, the pitch of the helix in the exit of water conservancy diversion air flue 36 is most short, and helix is located at the barrel in guide shell portion 31 Interior, helix is rotated in a clockwise direction (when seen from above), identical with the flow direction of carrier gas stream in branch chamber 35, spiral shell The common axial line of spin line and guide shell portion 31.The import of the upper end of the water conservancy diversion air flue 36 connects with the lower surface of branch chamber 35, The outlet of bottom is positioned at the lower end in guide shell portion 31.

The air admission hole 33 with branch chamber 35 is tangent connects, seamlessly transitted in connectivity part.Such mode is laid out and can reduced The resistance of carrier gas circulation, the energy loss of carrier gas is reduced, carrier gas is kept higher kinetic energy, into branch chamber 35, in branch chamber 35 internal rotations, there is longer flow, be advantageous to carrier gas and relatively evenly flow into water conservancy diversion air flue 36.The carrier gas passes through air admission hole 33rd, along identical direction rotational flow, the run into circulating resistance of carrier gas circulation is smaller, moves for branch chamber 35 and water conservancy diversion air flue 36 Energy loss is less, and the exit that carrier gas flows to water conservancy diversion air flue 36 still has higher energy so that carrier gas has higher outgoing Speed, outgoing carrier gas stream produce larger carrier gas stress to liquid-state silicon, help lend some impetus to liquid-state silicon flowing, are produced in liquid-state silicon Raw stronger rotational flow field.

By the pitch and radius of the helix for changing the outlet section of water conservancy diversion air flue 36, the outlet of design water conservancy diversion air flue 36 is located at The position of the bottom in guide shell portion 31, and the exit direction of the carrier gas stream in the exit of water conservancy diversion air flue 36, namely water conservancy diversion gas Tangential direction of the center line in road 36 in exit.The pitch of the helix of the outlet section of water conservancy diversion air flue 36 is gradually reduced, partly When footpath is constant, the outlet of water conservancy diversion air flue 36 is on the lower surface in guide shell portion 31, as shown in figure 19, the center of water conservancy diversion air flue 36 Line is between the tangent line (i.e. the exit direction of carrier gas stream) in exit and the lower surface (parallel to liquid silicon face) in guide shell portion 31 Angle (angle between tangent line dough-kneading method line) gradually increase, carrier gas stress of the outgoing carrier gas stream to liquid-state silicon is reduced；Work as water conservancy diversion The pitch of the helix in the exit of air flue 36 close to water conservancy diversion air flue 36 aperture when, the center line of water conservancy diversion air flue 36 is in exit Tangent line and the lower surface of guide shell portion 31 (parallel to liquid silicon face) between angle close to 90 degree, i.e. the center of water conservancy diversion air flue 36 Line close to parallel, is now emitted carrier gas stream and liquid silicon face close to flat in tangent line and the lower surface of guide shell portion 31 in exit OK, it is minimum to be emitted carrier gas stress of the carrier gas stream to liquid-state silicon.Furthermore it is also possible to as needed, change the outlet section of water conservancy diversion air flue 36 Helix pitch and radius, make that the pitch of the helix of the outlet section is gradually reduced, radius gradually increases, then water conservancy diversion air flue 36 outlet can also be located at the lateral surface in guide shell portion 31 and the friendship of lower surface positioned at the lower end of the lateral surface of guide shell portion 31 Place, as shown in Figure 20, Figure 21, to facilitate the export direction of design water conservancy diversion air flue 36, optimization outgoing carrier gas stream is in liquid silicon face On blow and penetrate region, such as make its centre position between liquid-state silicon center and liquid-state silicon edge, in the certain feelings of nebulizer gas pressure Under condition, make to produce stronger rotational flow field in liquid-state silicon.

Present embodiment is arranged on air inlet platform portion 32 outside in guide shell portion 31, leads in guiding device 30 in ingot furnace Visual field do not block.Observation window 114 has the visual field led in ingot furnace through guiding device 30, and operating personnel are from observation window 114 can see the state of silicon material in stove, facilitate stoker to operate；The infrared detecting set 90 for being fixed on the top of observation window 114 passes through Observation window, guiding device can detect the state of silicon material in stove, and automatic crystal growing technology is successfully carried out；Can by guiding device It is inserted into so that crystal bar will be surveyed in ingot furnace, rate of crystalline growth is convenient for measuring.

Built-in 4 of the guiding device 30 of present embodiment ingot furnace is changing the water conservancy diversion air flue of carrier gas flow direction, water conservancy diversion Air flue is distributed around the center line of guiding device, the outlet of water conservancy diversion air flue around guiding device center line along identical angle To being uniformly distributed, as shown in Figure 19,21.4 water conservancy diversion air flues of the carrier gas through guiding device are divided into 4 beam carrier gas streams, the 4 beam carrier gas stream Dispersedly blow respectively and penetrate liquid silicon face, forming 4 on liquid silicon face blows and penetrates region, described 4 blow penetrate region around The central distribution of liquid-state silicon, suitably reduce the angle of outgoing carrier gas stream and liquid silicon face, preferably 30-40 degree, make outgoing Carrier gas stream obliquely blows the surface for penetrating liquid-state silicon, and outgoing carrier gas stream produces the carrier gas stress of larger driving laminar flow to liquid-state silicon, Carrier gas stress is circumferentially distributed around liquid-state silicon center, carrier gas stress drive superficial layer liquid-state silicon flowing, then in liquid-state silicon Form the rotational flow field for making circumferential flow.Rotational flow field is advantageous to the Impurity Transport of liquid-state silicon surface flotation to the side of liquid-state silicon Edge, influence of the impurity of floating to crystal yield is reduced, improve the yield rate of crystal；Also help simultaneously by inside liquid-state silicon Impurity is transported to surface, promotes the volatilization of impurity；Liquid-state silicon has under the collective effect of free convection flow field and rotational flow field Transporting and being uniformly distributed beneficial to matter in liquid-state silicon is miscellaneous, the radial direction resistivity of crystal is more evenly distributed, and the quality of crystal is entered One step improves.Guiding device makes carrier gas dispersedly blow the different zones for penetrating liquid silicon face, effectively increases carrier gas stream and liquid The contact area of silicon face, the load volume contacted in unit area are reduced, then carrier gas is taken away from blowing to penetrate in the liquid-state silicon of region Heat it is few, the regional temperature range of decrease reduces, and liquid-state silicon constitutional supercooling degree reduces, and can efficiently reduce carrier gas and blows and penetrate region liquid Impurity forming core and impurity nucleus growth in silicon.

Embodiment 4

Embodiment 4 and embodiment 1 differ only in：Polycrystalline ingot furnace is built-in with guiding device 40, such as Figure 22, figure Shown in 23, the bottom axial restraint of drainage tube 122 of guiding device 40 and drainage system 12.The guiding device 40 is used for load Qi leel is emitted carrier gas stream into multi beam, and outgoing carrier gas stream obliquely blows the different zones for penetrating liquid silicon face respectively, and formation surrounds liquid The circumferentially distributed carrier gas stress in state silicon center, the flowing of carrier gas stress drive liquid-state silicon, formed in liquid-state silicon and make circumferential flow Rotational flow field.The outside of guiding device 40 sets the air inlet pipe portion 42 that carrier gas flows into.Heater 60 uses and is built in heat-insulation cage Above-mentioned heating tube in 14, then the output end of heating tube be connected by the way that pipeline 61 is coupled with the air inlet pipe portion 42 of guiding device 40 Logical, input connects with the appendix 50 of carrier gas.The heater 60 of carrier gas can also use above-mentioned air heater, then empty The output end of hot-air heater is connected with the air inlet pipe portion 42 of guiding device 40 by the way that pipeline 61 is coupled, the gas transmission of input and carrier gas Pipe 50 connects, and the mating pipeline 61 is located at the outside cladding thermal insulation layer of the part outside body of heater, to reduce the heat losses of carrier gas.

Wherein, the guiding device 40, as shown in Figure 24, Figure 25, including fastening part 45, branch chamber portion 41, air inlet pipe portion 42 and deflecting gas tube 43, its material be molybdenum, can also the exotic material such as the high titanium of use cost.Fastening part 45 is hollow circle Cylinder, is arranged on the top in branch chamber portion 41, and with its axial restraint.Set on the inwall of fastening part 45 along its centerline direction Internal thread 46, base area need that external screw thread can also be set.The branch chamber portion 41 is the airtight cavity of tubular in a ring, mainly It is made up of madial wall, lateral wall, upper end wall and lower end wall, madial wall and lateral wall are tubular, and madial wall is nested in lateral wall, And concentrically line.The air inlet pipe portion 42 is arranged on the outside in branch chamber portion 41, the axial line and guiding device of air inlet pipe portion 42 40 axis perpendicular, as shown in figure 25, the lateral wall in air inlet pipe portion 42 and branch chamber portion 41 are fixed, air inlet pipe portion 42 and shunting The tangent connection of side wall in chamber portion 41, the import of air inlet pipe portion 42 are arranged on the left side in branch chamber portion 41, so that in air inlet pipe portion 42 Carrier gas stream is along clockwise direction in inflow branch chamber portion 41 (seen from above).The axial line of the air inlet pipe portion 42 can also (being not drawn into figure) parallel with the axial line of guiding device 40, according to assembling needs, the opening upwards of air inlet pipe portion 42 are set, Can also be down-set, connected between air inlet pipe portion 42 and branch chamber portion 41 by connectivity trachea；The connectivity trachea is along clockwise (seen from above, to be not drawn into figure) is arranged in direction, the one end of connectivity trachea with air inlet pipe portion 42 is tangent connects, the other end With the side wall in branch chamber portion 41 is tangent connects, the stream (seen from above) in a clockwise direction of the carrier gas stream in the connectivity trachea Enter in branch chamber portion 41, then the carrier gas in branch chamber portion 41 is flowed in a clockwise direction.The lower section in the branch chamber portion 41 is set 4 to change the deflecting gas tube 43 of carrier gas flow direction, as shown in Figure 23,24,4 deflecting gas tubes 43 surround the axle in branch chamber portion 41 Heart line is uniformly distributed, and deflecting gas tube 43 can also be 2 or 3 or more than 5.The deflecting gas tube 43 is along cylindrical helix Be distributed in the underface in branch chamber portion 41, i.e. the center line of deflecting gas tube 43 extends downwardly along hand of helix, and with the spiral shell Spin line overlaps, as shown in figure 24.The helix is located at the underface of the lower end wall of branch chamber portion 41, is non-uniform pitch helix, The pitch in the exit of deflecting gas tube 43 is most short, the common axial line of helix and branch chamber portion 41.Helix is rotated in a clockwise direction (when seen from above), it is identical with the direction of carrier gas stream in branch chamber portion 41.The entrance point of the upper end of deflecting gas tube 43 and The lower end wall in branch chamber portion 41 is connected and fixed, and the outlet of the bottom of deflecting gas tube 43 is located under the lower end wall of branch chamber portion 41 Side, and be angularly uniformly distributed along identical around the center line of guiding device, as shown in figure 24, against liquid silicon face not Same region.

The air inlet pipe portion 42 with branch chamber portion 41 is tangent connects, seamlessly transitted in connectivity part.Such mode is laid out can To reduce the resistance of carrier gas circulation, the energy loss of carrier gas is reduced, carrier gas is kept higher kinetic energy, into branch chamber portion 41, In the internal rotation of branch chamber portion 41, there is longer flow, be advantageous to carrier gas and relatively evenly flow into deflecting gas tube 43.The carrier gas is led to Cross air inlet pipe portion 42, branch chamber portion 41 and deflecting gas tube 43 to rotate along identical direction, the circulation resistance that carrier gas is circulated run into Power is smaller, and kinetic energy loss is smaller, and the exit that carrier gas flows to deflecting gas tube 43 still has higher energy so that carrier gas have compared with High exit velocities, the carrier gas stream of outgoing produce larger carrier gas stress to liquid-state silicon, liquid-state silicon flowing are helped lend some impetus to, in liquid Stronger rotational flow field is produced in state silicon.

By the pitch and radius of the helix for changing the outlet section of deflecting gas tube 43, the outlet of design deflecting gas tube 43 is located at Position below the lower end wall of branch chamber portion 41, and the exit direction of the carrier gas stream in the exit of the deflecting gas tube 43, namely lead Tangential direction of the center line of flow tube 43 in exit.The pitch of the helix of the outlet section of deflecting gas tube 43 gradually subtracts It is small, when radius is constant, the outlet of deflecting gas tube 43 is positioned at the underface of the lower end wall in branch chamber portion 41；The center of deflecting gas tube 43 Line is between the tangent line (i.e. the exit direction of carrier gas stream) and the lower end wall of branch chamber portion 41 (parallel to liquid silicon face) in exit Angle (angle between tangent line and lower end wall normal) gradually increase, carrier gas stress of the outgoing carrier gas stream to liquid-state silicon gradually subtracts It is small；When the outlet section of deflecting gas tube 43 helix pitch close to deflecting gas tube external diameter when, the center line of deflecting gas tube 43 Angle between the tangent line and the lower end wall of branch chamber portion 41 (parallel to liquid silicon face) in exit is close to 90 degree, i.e. water conservancy diversion gas The center line of pipe 43 exit tangent line and the lower end wall of branch chamber portion 41 close to parallel, be emitted carrier gas stream and liquid-state silicon table It is minimum to be now emitted carrier gas stress of the carrier gas stream to liquid-state silicon close to parallel for face.In addition, as needed, water conservancy diversion can also be changed The pitch and radius of the helix of the outlet section of tracheae 43, make that the pitch of the helix of the outlet section is gradually reduced, radius gradually increases Greatly, then the outlet of deflecting gas tube 43 positioned at the lower end of the extended surface of the lateral wall of branch chamber portion 41, can also be located at branch chamber portion 41 The outside of the extended surface of lateral wall；To facilitate the export direction of design deflecting gas tube 43, optimization outgoing carrier gas stream is in liquid-state silicon table Blowing on face penetrates region, and the centre position being such as between liquid-state silicon center and liquid-state silicon edge is certain in nebulizer gas pressure In the case of, make to produce stronger rotational flow field in liquid-state silicon.

Present embodiment is arranged on air inlet pipe portion 42 outside in branch chamber portion 41, leads in guiding device 40 in ingot furnace Visual field do not block.Observation window 114 on furnace roof has a visual field led in ingot furnace through guiding device 40, operating personnel from Observation window 114 can see the state of silicon material in stove, facilitate stoker to operate；It is fixed on the infrared detecting set of the top of observation window 114 It is observed that window 114, guiding device 40 can detect the state of silicon material in stove, automatic crystal growing technology is successfully carried out；Survey crystal bar It can be inserted into by guiding device in ingot furnace, rate of crystalline growth is convenient for measuring.

4 are provided with the guiding device 40 of present embodiment ingot furnace to change the deflecting gas tube of carrier gas flow direction, water conservancy diversion Tracheae is distributed around the center line of guiding device, the outlet of deflecting gas tube around guiding device center line along identical angle To being uniformly distributed, as shown in figure 24.4 deflecting gas tubes of the carrier gas through guiding device are divided into 4 beam carrier gas streams, the 4 beam carrier gas flow point Blow scatteredly and penetrate liquid silicon face, formation 4, which is blown, on liquid silicon face penetrates region, and 4 are blown the center that region surrounds liquid-state silicon of penetrating Distribution.Suitably reduce the angle between outgoing carrier gas stream and liquid silicon face, preferably 30-40 degree, tilt outgoing carrier gas stream Ground blows the surface for penetrating liquid-state silicon, and the liquid-state silicon that outgoing carrier gas stream penetrates region to blowing produces the larger carrier gas stress for driving laminar flow, Carrier gas stress drive superficial layer liquid-state silicon flows；Carrier gas stress is circumferentially distributed around liquid-state silicon center, then in liquid-state silicon Form the rotational flow field for making circumferential flow.Rotational flow field is advantageous to the Impurity Transport of liquid-state silicon surface flotation to the side of liquid-state silicon Edge, influence of the impurity of floating to crystal yield is reduced, improve the yield rate of crystal；Also help simultaneously by inside liquid-state silicon Impurity is transported to surface, promotes the volatilization of impurity；Liquid-state silicon is under the collective effect of free convection flow field and rotational flow field, favorably Matter is miscellaneous in liquid-state silicon transporting and being uniformly distributed, and avoids impurity local from being enriched with, and the radial direction resistivity of crystal is more evenly distributed, brilliant The quality of body is further enhanced.Guiding device makes carrier gas dispersedly blow the different zones for penetrating liquid silicon face, effectively increases The contact area of air-flow and liquid silicon face is loaded, the load volume contacted in unit area is reduced, then carrier gas is from Suo Chuishe areas The heat taken away in the liquid-state silicon of domain is few, and the regional temperature range of decrease reduces, and liquid-state silicon constitutional supercooling degree reduces, and can efficiently reduce load The impurity forming core and impurity nucleus growth that air-blowing is penetrated in the liquid-state silicon of region.

In order to facilitate description, unification is carried out to technical name corresponding in the guiding device of rear three embodiments below Change is handled.The air admission hole 213,33, air inlet pipe portion 42 will be commonly referred to as air inlet；One or two branch chamber, branch chamber 35, branch chamber Portion 41 will be commonly referred to as branch chamber；Water conservancy diversion air flue 36,222, deflecting gas tube 43 will be commonly referred to as flow-guiding channel.

The operation principle of polycrystalline ingot furnace of the present invention is：Silica crucible 18 is placed on graphite bottom plate 181 first, to quartz Silicon material is filled in crucible 18, then 4 pieces of graphite protective plates 182 are erectly placed on respectively the avris of graphite bottom plate 181, and makes graphite The side wall of backplate 182 and crucible 18 is fitted, then two adjacent graphite protective plates 182 are fixed successively with bolt, finally again cover plate 183 cover on the top end face of graphite protective plate 182.The lower furnace body of polycrystalline cast ingot is opened, graphite bottom plate is dragged with the yoke of fork truck 181, move it into stove and be placed on heat exchange platform 16, close lower furnace body, start automatic crystal growing technology and carry out ingot casting.Appendix 50 cold carrier gas are transported to heater and heated, and form the higher hot carrier gas of temperature, and the hot carrier gas flows into through pipeline is coupled The branch chamber of guiding device, and in branch chamber internal rotation, then separately flow into a plurality of equally distributed lead from the lower end of branch chamber In circulation road, then it is emitted from the exit of flow-guiding channel, the carrier gas stream of outgoing dispersedly blows respectively penetrates the surface of liquid-state silicon not Same region.The a plurality of flow-guiding channel of guiding device is distributed around the center line of guiding device, and the outlet of flow-guiding channel is around water conservancy diversion The center line of device is angularly uniformly distributed along identical, and the outgoing carrier gas stream of flow-guiding channel dispersedly blows respectively penetrates liquid-state silicon table The different zones in face, this, which blows, penetrates region and is uniformly distributed around the center of liquid-state silicon, and outgoing carrier gas stream penetrates the liquid in region to blowing State silicon produces the carrier gas stress of driving laminar flow, and carrier gas stress surrounds the central distribution of liquid-state silicon, and carrier gas stress drive top layer liquid State silicon is flowed, and the rotational flow field for making circumferential flow is formed in liquid-state silicon.Suitably reduce outgoing carrier gas stream and liquid silicon face Between angle, preferably 30-40 degree, outgoing carrier gas stream obliquely blows the surface for penetrating liquid-state silicon, and outgoing carrier gas miscarriage is to liquid-state silicon The carrier gas stress of bigger driving laminar flow is given birth to, stronger rotational flow field is produced in liquid-state silicon.Rotational flow field is advantageous to liquid-state silicon The Impurity Transport of surface flotation reduces influence of the impurity of floating to crystal yield to the edge of liquid-state silicon, improve crystal into Product rate；Meanwhile be advantageous to accelerate on the surface of the Impurity Transport inside liquid-state silicon to liquid-state silicon the volatilization of impurity in liquid-state silicon； Liquid-state silicon is advantageous to that matter in liquid-state silicon is miscellaneous to be transported and uniformly divide under the collective effect of thermal natural convection flow field and rotational flow field Cloth, avoid impurity local from being enriched with, the radial direction resistivity of crystal is more evenly distributed, the electrical property of crystal is optimized, crystal Quality is further enhanced.

Compared to the prior art, the present invention has following technological progress.

1) the local supercooling caused by carrier gas in liquid-state silicon is decreased or even eliminated, by setting the heater of carrier gas, First heated device is thermally formed hot carrier gas for cold carrier gas, then hot carrier gas is blown and penetrates liquid-state silicon.When the temperature of hot carrier gas is less than liquid During the temperature of silicon, carrier gas from blow penetrate region liquid-state silicon in the heat taken away greatly reduce, the temperature drop of the region liquid-state silicon Significantly reduce, degree of supercooling reduces, and the forming core probability of the impurity in liquid-state silicon caused by carrier gas is reduced, and is reduced and is even eliminated liquid The impurity promoted in silicon by carrier gas is formed；When the temperature of hot carrier gas is higher than the temperature of liquid-state silicon, carrier gas is to Suo Chuishe areas The liquid-state silicon supplying heat in domain, the temperature of the region liquid-state silicon is raised, reduce the temperature difference of radial direction in liquid-state silicon, suppress the area Impurity forming core in the liquid-state silicon of domain, eliminates the formation for the impurity that carrier gas is promoted, and improves the quality of crystal.

2) there is the visual field led in ingot furnace in the observation window of furnace roof, pass through air inlet platform portion's (air inlet guiding device Pipe portion) the outside with connect cylinder portion/guide shell portion (branch chamber portion) of guiding device is arranged on, lead in guiding device inside ingot furnace Visual field do not block；The situation that can be watched in ingot furnace by the observation window of furnace roof, facilitates stoker to operate；Crystal bar is surveyed to may pass through Guiding device is inserted into ingot furnace, and the speed of growth of crystal is convenient for measuring；Infrared detecting set passes through the detectable ingot furnace of observation window The state of interior silicon material, automatic crystal growing technology are smoothed out.

3) the local temperature drop in liquid-state silicon caused by carrier gas is further reduced, multiple flow-guiding channels of guiding device make carrier gas It is divided into multi beam carrier gas stream, multi beam carrier gas flow point dissipates the different zones obliquely blown and penetrate liquid silicon face, effectively increases carrier gas With the contact area of liquid silicon face, the heat that carrier gas stream is taken away from the unit area is reduced, the office caused by carrier gas stream Domain temperature drop reduces, so as to reduce or even avoid the local temperature drop in liquid-state silicon caused by carrier gas.

4) promote impurity volatilization and impurity to be uniformly distributed, improve the quality of crystal, multiple flow-guiding channels of guiding device enclose Center line around guiding device is uniformly distributed, and carrier gas is divided into multi beam carrier gas stream through flow-guiding channel, and carrier gas stream obliquely blows respectively to be penetrated The different zones of liquid silicon face, carrier gas stream, which blows, penetrates the central distribution that region surrounds liquid silicon face, and carrier gas stream is to liquid-state silicon The carrier gas stress of driving laminar flow is produced, carrier gas stress drive liquid-state silicon flowing, forms the rotational flow field around its center flow. Rotational flow field is advantageous to the Impurity Transport liquid-state silicon surface flotation to liquid-state silicon edge, reduces the impurity of floating to crystal yield Influence, improve the yield rate of crystal；Also help the surface of the Impurity Transport inside liquid-state silicon to liquid-state silicon, accelerate liquid The volatilization of impurity in silicon；It is miscellaneous to be advantageous to matter in liquid-state silicon under the collective effect of free convection flow field and rotational flow field for liquid-state silicon Transport and be uniformly distributed, avoid impurity local be enriched with, crystal radial direction resistivity is more evenly distributed, the quality of crystal is entered One step improves.

General principle, principal character and the advantages of the present invention of the present invention has been shown and described above.The technology of the industry Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the simply explanation described in above-described embodiment and specification is originally The principle of invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, the present invention Claimed scope is by appended claims, specification and its equivalent thereof.

Claims

1. a kind of polycrystalline ingot furnace with carrier gas heater, including heat-insulation cage and guiding device, the heat-insulation cage are main The cavity being made up of side thermal insulation board, top thermal insulation board and bottom thermal insulation board, it is characterised in that：Also include being used for the heating for heating carrier gas Device；The guiding device at least by being formed with connect cylinder and guide shell, it is described with connect cylinder include being fixedly connected with connect cylinder portion and Air inlet platform portion, it is the cylinder that through hole is set along its centerline direction with connect cylinder portion, air inlet platform portion is arranged on the outside with connect cylinder portion, The air admission hole of carrier gas inflow is provided in air inlet platform portion, is set in the barrel with connect cylinder portion annular in shape with its concentrically line First branch chamber of lower ending opening, connected between the air admission hole and the first branch chamber by connecting air flue；The guide shell is edge Its centerline direction sets the cylinder of through hole, is set in the barrel of guide shell upper end with having the upper end annular in shape of concentrically line Second branch chamber of face opening, the second branch chamber and the first branch chamber are corresponding；At least one is set in the barrel of the guide shell The water conservancy diversion air flue that cylindrical helix of the bar from the second branch chamber lower surface along non-uniform pitch extends downwardly, water conservancy diversion air flue go out Mouth is located at the lower end of guide shell；The upper end of the guide shell is through the through hole in the middle part of the thermal insulation board of top, and is arranged on top thermal insulation board Top connects with connect cylinder axial restraint；The output end of the heater and the air admission hole of guiding device are connected by the way that pipeline is coupled Logical, input connects with the delivery pipe of carrier gas.

A kind of 2. polycrystalline ingot furnace with carrier gas heater according to claim 1, it is characterised in that：The connection The one end of air flue with air admission hole is tangent connects, the other end with the side of the first branch chamber is tangent connects.

A kind of 3. polycrystalline ingot furnace with carrier gas heater according to claim 2, it is characterised in that：The heating Device is air heater, sets thermal insulation layer in the housing of air heater, the output end of air heater and guiding device Air admission hole is connected by the way that pipeline communication, input is coupled with the delivery pipe of carrier gas；The outside cladding thermal insulation layer of the mating pipeline.

A kind of 4. polycrystalline ingot furnace with carrier gas heater according to claim 3, it is characterised in that：The air Heater is rib-pipe type air heater.

A kind of 5. polycrystalline ingot furnace with carrier gas heater according to claim 2, it is characterised in that：The heating Device is heating tube, and the heating tube is arranged in the heat-insulation cage of ingot furnace, the output end of heating tube and the air inlet of guiding device Hole is connected by the way that pipeline communication, input is coupled with the appendix of carrier gas.

A kind of 6. polycrystalline ingot furnace with carrier gas heater according to claim 5, it is characterised in that：The heating Pipe is in roundabout distribution, is arranged between the heater of ingot furnace and heat-insulation cage.

A kind of 7. polycrystalline ingot furnace with carrier gas heater according to claim 6, it is characterised in that：The heating Manage as finned tube, be arranged between the heater top of heater and the top thermal insulation board of heat-insulation cage.

A kind of 8. polycrystalline ingot furnace with carrier gas heater according to claim 4 or 5, it is characterised in that：It is described Ribbed pipe, the material of heating tube are molybdenum, tungsten or titanium.

9. a kind of polycrystalline ingot furnace with carrier gas heater according to claim 1-7 any claims, it is special Sign is：

The pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, and the outlet of water conservancy diversion air flue is positioned at the lower end of guide shell Face；Or

The pitch of the helix of the water conservancy diversion air passage outlet section is gradually reduced, radius gradually increases, and the outlet of water conservancy diversion air flue is located at At the lower end of guide shell lateral surface or lateral surface positioned at guide shell and the friendship of lower surface.

A kind of 10. polycrystalline ingot furnace with carrier gas heater according to claim 9, it is characterised in that：It is described to lead The quantity in gas road is 2,3 or 4, and the center line around guide shell is uniformly distributed.