CN105543954A - Polycrystal ingot casting furnace with carrier gas heater - Google Patents
Polycrystal ingot casting furnace with carrier gas heater Download PDFInfo
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- CN105543954A CN105543954A CN201610082945.1A CN201610082945A CN105543954A CN 105543954 A CN105543954 A CN 105543954A CN 201610082945 A CN201610082945 A CN 201610082945A CN 105543954 A CN105543954 A CN 105543954A
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- state silicon
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- 239000012159 carrier gas Substances 0.000 title claims abstract description 363
- 238000005266 casting Methods 0.000 title abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 133
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 81
- 239000007789 gas Substances 0.000 claims description 50
- 238000009413 insulation Methods 0.000 claims description 46
- 238000004891 communication Methods 0.000 claims description 16
- 235000008733 Citrus aurantifolia Nutrition 0.000 claims description 7
- 235000011941 Tilia x europaea Nutrition 0.000 claims description 7
- 239000004571 lime Substances 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 abstract description 261
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 253
- 239000010703 silicon Substances 0.000 abstract description 252
- 239000012535 impurity Substances 0.000 abstract description 99
- 239000002210 silicon-based material Substances 0.000 abstract description 25
- 239000007788 liquid Substances 0.000 abstract description 19
- 238000004781 supercooling Methods 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 230000006911 nucleation Effects 0.000 abstract 1
- 238000010899 nucleation Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 54
- 230000000149 penetrating effect Effects 0.000 description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 34
- 229910002804 graphite Inorganic materials 0.000 description 29
- 239000010439 graphite Substances 0.000 description 29
- 238000009826 distribution Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 17
- 239000000463 material Substances 0.000 description 15
- 230000000007 visual effect Effects 0.000 description 13
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 12
- 229910052750 molybdenum Inorganic materials 0.000 description 12
- 239000011733 molybdenum Substances 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 238000013461 design Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 9
- 230000008859 change Effects 0.000 description 9
- 238000007664 blowing Methods 0.000 description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 7
- 229910052721 tungsten Inorganic materials 0.000 description 7
- 239000010937 tungsten Substances 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000007667 floating Methods 0.000 description 6
- 238000005188 flotation Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 5
- 206010022000 influenza Diseases 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 210000003437 trachea Anatomy 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008676 import Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000006199 nebulizer Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 241000237858 Gastropoda Species 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 238000000462 isostatic pressing Methods 0.000 description 2
- 238000004898 kneading Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 as central region Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a polycrystal ingot casting furnace with a carrier gas heater, which comprises a guide device and a heater for heating carrier gas, wherein the guide device is assembled in the ingot casting furnace and used for delivering carrier gas into the furnace; an output end of the heater is communicated with an input end of the guide device; and an input end is communicated with a carrier gas delivery pipe. Cold carrier gas is heated by the heater to form hot carrier gas with higher temperature, and the hot carrier gas is used for injecting a silicon material in the crucible via the guide device. The polycrystal ingot casting furnace reduces the degree of supercooling of the liquid silicon in the injection region, and lowers and even eliminates the impurity nucleation promoted by the carrier gas in the liquid silicon and the growth of the impurity nuclei.
Description
Technical field
The present invention relates to a kind of polycrystalline ingot furnace, particularly relate to a kind of polycrystalline ingot furnace with carrier gas heating unit, belong to crystal growth equipment field.
Background technology
Polycrystalline ingot furnace comprises body of heater, heat-insulation cage, well heater, heat exchange platform, drainage system.Well heater comprises heater top and side well heater, is arranged in heat-insulation cage; Heat exchange platform is assemblied in lower furnace body by graphite column and is positioned at heat-insulation cage.The crucible filling silicon material is placed on heat exchange platform, is positioned at side well heater; Drainage system runs through and is assemblied on the top thermal baffle of heat-insulation cage, and the outlet of its lower end faces toward the central part of crucible, for transporting carrier gas.Ingot furnace adopts four sides, end face five heating, then in crucible, the liquid-state silicon of formation four avris, higher than the temperature at middle part, to float, natural convection flow field that the liquid-state silicon at middle part is sunk by the temperature of four avris of liquid-state silicon.Some impurity (as carbon, nitrogen) melted in the liquid-state silicon that four avris temperature are higher if melting degree to reach or close to saturated, when it flows to middle part, because temperature reduces, impurity melting degree reaches supersaturation, and impurity such as the forming core such as carbon, nitrogen will be caused to separate out; Along with liquid flows down, heavy temperature declines and progressively grows formation impurity inclusion impurity core.Cold carrier gas concentrates the central zone of vertically blowing and penetrating liquid-state silicon through the outlet of drainage system, carrier gas takes away a large amount of heats from this region liquid-state silicon, this central zone liquid-state silicon temperature is caused to decline further, condensate depression strengthens, thus impurity such as the impurity such as carbon, the nitrogen supersaturation forming core in promotion liquid-state silicon is separated out, and promote that impurity nucleus growth forms macroscopical impurity, as silicon carbide impurity, silicon nitride inclusions.Silicon carbide impurity has electroactive, affects the transformation efficiency of solar cell.Therefore, need a kind of polycrystalline ingot furnace with carrier gas heating unit of exploitation badly, cold carrier gas after being heated into the higher hot carrier gas of temperature, then blown the liquid-state silicon of penetrating in crucible by drainage system, to reduce the impurity forming core and impurity nucleus growth that carrier gas in liquid-state silicon causes.
Summary of the invention
The object of the invention is for problems of the prior art, a kind of polycrystalline ingot furnace with carrier gas heating unit is provided.To overcome problem existing in prior art: a certain region of blowing and penetrating liquid-state silicon surface is concentrated in cold carrier gas, as central region, carrier gas takes away a large amount of heats from this region, this region is caused significantly to lower the temperature, liquid-state silicon is excessively cold, promotes that in liquid-state silicon, impurity forming core and impurity nucleus growth form impurity inclusion.
Technical scheme of the present invention is to provide a kind of polycrystalline ingot furnace with carrier gas heating unit, comprise and being assemblied in ingot furnace for the drainage system to delivery of carrier gas in stove, its key points in design is: also comprise the heating unit for heating carrier gas, the output terminal of described heating unit is connected with the input terminus of drainage system, and input terminus is communicated with the pneumatic tube of carrier gas.
In the application, polycrystalline ingot furnace of the present invention also has following preferred technical scheme further.
Preferably, described heating unit is airheater, arranges thermofin in the housing of airheater, and the output terminal of airheater and the input terminus of drainage system are by connecting pipeline communication, and input terminus is communicated with the pneumatic tube of carrier gas; The described coated thermofin in outside connecting pipeline.
Preferably, described airheater is rib-pipe type airheater.
Preferably, described heating unit is heating tube, and described heating tube is arranged in the heat-insulation cage of ingot furnace, and the output terminal of heating tube and the input terminus of drainage system are by connecting pipeline communication, and input terminus is communicated with the pneumatic tube of carrier gas.
Preferably, the roundabout distribution of described heating tube, is arranged between the well heater of ingot furnace and heat-insulation cage.
Preferably, described heating tube is finned tube, is arranged between the heater top of well heater and the top thermal baffle of heat-insulation cage.
Preferably, the material of described ribbed pipe, heating tube is molybdenum, tungsten or titanium.
Polycrystalline ingot furnace of the present invention is with carrier gas heating unit, and the cold carrier gas hot carrier gas that first formation temperature is higher after heating devices heat, then blows through drainage system the silicon material penetrated in crucible by this hot carrier gas.When temperature lower than liquid-state silicon of the temperature of carrier gas, carrier gas from blow the less calories penetrated and take away the liquid-state silicon in region, carrier gas blow the liquid-state silicon of penetrating region local temperature drop greatly reduce, condensate depression reduces, the forming core probability of the impurity that in liquid-state silicon, carrier gas causes reduces, and reduces and even eliminates being formed of the impurity promoted by carrier gas in liquid-state silicon; When carrier gas temperature higher than blow the temperature of the liquid-state silicon of penetrating region time, carrier gas to blow the liquid-state silicon supplying heat penetrating region, the temperature of this region liquid-state silicon is raised, reduce temperature head radial in liquid-state silicon, suppress the impurity forming core in this region liquid-state silicon, eliminate the formation of the impurity that carrier gas promotes, improve the quality of crystal.
The object of the invention is for problems of the prior art, a kind of polycrystalline ingot furnace with carrier gas heating unit and guiding device thereof is provided.To overcome problem existing in prior art: a certain region of blowing and penetrating liquid-state silicon surface is concentrated in cold carrier gas, carrier gas liquid towards silicon produces carrier gas stress, and do not form the carrier gas stress doing circumference distribution along liquid-state silicon center, be difficult in liquid-state silicon form rotational flow field, be unfavorable for the volatilization of impurity, and be unfavorable for transporting and being uniformly distributed of impurity, cause the radial resistivity contrasts of crystal large; On the other hand, cold carrier gas takes away a large amount of heats from this region, causes this region to lower the temperature, and causes liquid-state silicon component excessively cold, promotes that in liquid-state silicon, impurity forming core and impurity nucleus growth form impurity inclusion.
A kind of technical scheme of the present invention is to provide a kind of polycrystalline ingot furnace with carrier gas heating unit and guiding device, comprise heat-insulation cage and guiding device, the cavity of described heat-insulation cage for forming primarily of side thermal baffle, top thermal baffle and end thermal baffle, its key points in design is: also comprise the heating unit for heating carrier gas; Described guiding device is at least by connecting cylinder and guide shell is formed, described connect cylinder comprise be fixedly connected with connect a portion and air inlet platform portion, connecting a portion is the cylinder arranging through hole along its centerline direction, air inlet platform portion is arranged on the outside connecting a portion, the air inlet port being used for carrier gas and flowing into is set in air inlet platform portion, the first branch chamber with its concentrically lower ending opening in the form of a ring of line is set in the barrel connecting a portion, by being communicated with air flue connection between described air inlet port with the first branch chamber; Described guide shell is the cylinder arranging through hole along its centerline direction, and arrange the second branch chamber with its concentrically upper surface opening in the form of a ring of line in the barrel of guide shell upper end, the second branch chamber is corresponding with the first branch chamber; Arrange at least one water conservancy diversion air flue from the second branch chamber lower surface along from the cylindrical helix of non-uniform pitch to downward-extension in the barrel of described guide shell, the outlet of water conservancy diversion air flue is positioned at the lower end of guide shell; The upper end of described guide shell, through the through hole in the middle part of the thermal baffle of top, is connected with the axial restraint that connects be arranged on above the thermal baffle of top; The output terminal of described heating unit and the air inlet port of guiding device are by connecting pipeline communication, and input terminus is communicated with the transfer lime of carrier gas.
In the application, polycrystalline ingot furnace of the present invention also has following preferred technical scheme further.
Preferably, an end of described connection air flue is communicated with air inlet port is tangent, and the other end is communicated with the side of the first branch chamber is tangent.
Preferably, described heating unit is airheater, arranges thermofin in the housing of airheater, and the output terminal of airheater and the air inlet port of guiding device are by connecting pipeline communication, and input terminus is communicated with the transfer lime of carrier gas; The described coated thermofin in outside connecting pipeline.
Preferably, described airheater is rib-pipe type airheater.
Preferably, described heating unit is heating tube, and described heating tube is arranged in the heat-insulation cage of ingot furnace, and the output terminal of heating tube and the air inlet port of guiding device are by connecting pipeline communication, and input terminus is communicated with the pneumatic tube of carrier gas.
Preferably, described heating tube is roundabout distribution, is arranged between the well heater of ingot furnace and heat-insulation cage.
Preferably, described heating tube is finned tube, is arranged between the heater top of well heater and the top thermal baffle of heat-insulation cage.
Preferably, the material of described ribbed pipe, heating tube is molybdenum, tungsten or titanium.
Preferably, the pitch of the spiral-line of described water conservancy diversion air passage outlet section reduces gradually, and the outlet of water conservancy diversion air flue is positioned at the lower surface of guide shell; Or,
The pitch of the spiral-line of described water conservancy diversion air passage outlet section reduces gradually, radius increases gradually, and the outlet of water conservancy diversion air flue is positioned at the lower end of guide shell outer side or is positioned at the outer side of guide shell and friendship place of lower surface.
Preferably, the quantity of described water conservancy diversion air flue is 2,3 or 4, and the medullary ray round guide shell is uniformly distributed.
The guiding device of polycrystalline ingot furnace of the present invention built-in many in order to change carrier gas stream to water conservancy diversion air flue, the outlet of water conservancy diversion air flue is uniformly distributed round the medullary ray of guiding device along identical angle, carrier gas is divided into many carrier gas streams through guiding device, many the different zones of penetrating liquid-state silicon surface is blown in carrier gas stream dispersion obliquely, produce the carrier gas stress around liquid-state silicon central distribution, carrier gas stress drive upper layer liquid-state silicon flows, and forms the rotational flow field making circumferential flow in liquid-state silicon.Rotational flow field is conducive to the impurity of liquid-state silicon inside to be transported to surface, promotes the volatilization of impurity; Be conducive to assorted the transporting and be uniformly distributed of matter in liquid-state silicon, the radial resistivity of crystal evenly.The visual field led in described guiding device in ingot furnace is unobstructed, can be seen the state of silicon material in stove by the viewing window of furnace roof, be inserted the speed of growth of survey crystal bar measurement crystal; Infrared detecting group can detect the state of silicon material in stove.The cold carrier gas hot carrier gas that first formation temperature is higher after heating devices heat, then blows through drainage system the silicon material penetrated in crucible by this hot carrier gas.When temperature lower than liquid-state silicon of the temperature of carrier gas, carrier gas from blow the less calories penetrated and take away the liquid-state silicon in region, the temperature drop of the liquid-state silicon in this region greatly reduces, and the impurity forming core probability that in liquid-state silicon, carrier gas causes reduces, and reduces the formation even eliminating the impurity that carrier gas promotes; When carrier gas temperature higher than blow the temperature of the liquid-state silicon of penetrating region time, carrier gas to blow the liquid-state silicon supplying heat penetrating region, the temperature of this region liquid-state silicon is raised, reduces temperature head radial in liquid-state silicon, suppress the impurity forming core in this region liquid-state silicon and impurity nucleus growth.
Another kind of technical scheme of the present invention is to provide a kind of polycrystalline ingot furnace with carrier gas heating unit and guiding device, comprise heat-insulation cage and thrust-augmenting nozzle, the cavity of described heat-insulation cage for forming primarily of side thermal baffle, top thermal baffle and end thermal baffle, its key points in design is: also comprise guiding device and the heating unit for heating carrier gas, described guiding device comprises the guide shell portion and air inlet platform portion that are fixedly connected with, guide shell portion is the cylinder arranging through hole along its centerline direction, and air inlet platform portion is arranged on the outside in guide shell portion; Branch chamber in the form of a ring with its concentrically line is set in the barrel of upper end, described guide shell portion; The built-in air inlet port flowed into for carrier gas in air inlet platform portion, is communicated with by being communicated with air flue between air inlet port with branch chamber; Arrange at least one in the barrel in described guide shell portion from the lower surface of branch chamber along the cylindrical helix of non-uniform pitch to the water conservancy diversion air flue of downward-extension, the outlet of water conservancy diversion air flue is positioned at the lower end in guide shell portion; Described thrust-augmenting nozzle is assemblied on the thermal baffle of top, and its lower end through the through hole in the middle part of the thermal baffle of top, and is stretched out from the lower surface of top thermal baffle; Described guiding device is connected with thrust-augmenting nozzle bottom axial restraint; The output terminal of described heating unit and the air inlet port of guiding device are by connecting pipeline communication, and input terminus is communicated with the transfer lime of carrier gas.
In the application, polycrystalline ingot furnace of the present invention also has following preferred technical scheme further.
Preferably, an end of described connection air flue is communicated with air inlet port is tangent, and the other end is communicated with the side of branch chamber is tangent.
Preferably, described heating unit is airheater, arranges thermofin in the housing of airheater, and the output terminal of airheater and the air inlet port of guiding device are by connecting pipeline communication, and output terminal is used for being communicated with the pneumatic tube of carrier gas; The described coated thermofin in outside connecting pipeline.
Preferably, described airheater is rib-pipe type airheater.
Preferably, described heating unit is heating tube, and described heating tube is arranged in the heat-insulation cage of ingot furnace, and the output terminal of heating tube and the air inlet port of guiding device are by connecting pipeline communication, and output terminal is communicated with the pneumatic tube of carrier gas.
Preferably, described heating tube is roundabout distribution, is arranged between the well heater of ingot furnace and heat-insulation cage.
Preferably, described heating tube is finned tube, is arranged between the heater top of well heater and the top thermal baffle of heat-insulation cage.
Preferably, the material of described ribbed pipe, heating tube is molybdenum, tungsten or titanium.
Preferably, the pitch of the spiral-line of described water conservancy diversion air passage outlet section reduces gradually, and the outlet of water conservancy diversion air flue is positioned at the lower surface in guide shell portion; Or,
The pitch of the spiral-line of described water conservancy diversion air passage outlet section reduces gradually, radius increases gradually, and the outlet of water conservancy diversion air flue is positioned at the lower end of guide shell portion outer side or is positioned at the outer side in guide shell portion and friendship place of lower surface.
Preferably, the quantity of described water conservancy diversion air flue is 3,4 or 5, and the medullary ray round guiding device is uniformly distributed.
Preferably, the material of described guiding device is graphite or molybdenum.
The guiding device of polycrystalline ingot furnace of the present invention built-in many in order to change carrier gas stream to water conservancy diversion air flue, the outlet of water conservancy diversion air flue is uniformly distributed round the medullary ray of guiding device along identical angle, carrier gas is divided into many carrier gas streams through guiding device, many the different zones of penetrating liquid-state silicon surface is blown in carrier gas stream dispersion obliquely, produce the carrier gas stress doing circumference distribution around liquid-state silicon center, carrier gas stress drive upper layer liquid-state silicon flows, and forms the rotational flow field making circumferential flow in liquid-state silicon.Rotational flow field is conducive to the impurity of liquid-state silicon inside to be transported to surface, promotes the volatilization of impurity; Be conducive to assorted the transporting and be uniformly distributed of matter in liquid-state silicon, the radial resistivity of crystal evenly.The visual field led in described guiding device in ingot furnace is unobstructed, can be seen the state of silicon material in stove by the viewing window of furnace roof, be inserted the speed of growth of survey crystal bar measurement crystal; Infrared detecting group can detect the state of silicon material in stove.The cold carrier gas hot carrier gas that first formation temperature is higher after heating devices heat, then blows to the silicon material in crucible through drainage system by this hot carrier gas.When temperature lower than liquid-state silicon of the temperature of carrier gas, carrier gas from blow the less calories penetrated and take away the liquid-state silicon in region, the temperature drop of the liquid-state silicon in this region greatly reduces, the impurity forming core probability caused by carrier gas in liquid-state silicon reduces, and reduces the formation even eliminating the impurity that carrier gas promotes; When carrier gas temperature higher than blow the temperature of the liquid-state silicon of penetrating region time, carrier gas to blow the liquid-state silicon supplying heat penetrating region, the temperature of this region liquid-state silicon is raised, reduces temperature head radial in liquid-state silicon, suppress the impurity forming core in this region liquid-state silicon and impurity nucleus growth.
Another technical scheme of the present invention is to provide a kind of polycrystalline ingot furnace with carrier gas heating unit and guiding device, comprise heat-insulation cage and thrust-augmenting nozzle, the cavity of described heat-insulation cage for forming primarily of side thermal baffle, top thermal baffle and end thermal baffle, its key points in design is: also comprise guiding device and the heating unit for heating carrier gas, and described guiding device comprises branch chamber portion, inlet pipe portion and at least one deflecting gas tube; The airtight cavity in the form of a ring that described branch chamber portion is formed primarily of inner side-wall, outer side wall, upper end wall and lower end wall; Inlet pipe portion is arranged on the outside of the outer side wall in branch chamber portion, and the one end in inlet pipe portion is fixed with the outer side wall in branch chamber portion and is communicated with; Described deflecting gas tube is distributed in the below in branch chamber portion along the cylindrical helix of non-uniform pitch, and the upper end of deflecting gas tube is communicated with the lower end wall in branch chamber portion and fixes, and the bottom of deflecting gas tube is outlet; Described thrust-augmenting nozzle is assemblied on the thermal baffle of top, and its lower end through the through hole in the middle part of the thermal baffle of top, and is stretched out from the lower surface of top thermal baffle; Described guiding device is connected with thrust-augmenting nozzle bottom axial restraint; The output terminal of described heating unit and the inlet pipe portion of guiding device are by connecting pipeline communication, and input terminus is communicated with the transfer lime of carrier gas.
In the application, polycrystalline ingot furnace of the present invention also has following preferred technical scheme further.
Preferably, described inlet pipe portion is communicated with by communicating pipe with between branch chamber portion, and an end of described communicating pipe is communicated with inlet pipe portion is tangent and fixes, and the other end is communicated with the sidewall in branch chamber portion is tangent and fixes.
Preferably, described heating unit is airheater, arranges thermofin in the housing of airheater, and the output terminal of airheater and the inlet pipe portion of guiding device are by connecting pipeline communication, input terminus is used for being communicated with the pneumatic tube of carrier gas, described in connect the coated thermofin in outside of pipeline.
Preferably, described airheater is rib-pipe type airheater.
Preferably, described heating unit is heating tube, and described heating tube is arranged in the heat-insulation cage of ingot furnace, and the output terminal of heating tube and the inlet pipe portion of guiding device are by connecting pipeline communication, and input terminus is communicated with the pneumatic tube of carrier gas.
Preferably, the roundabout distribution of described heating tube, is arranged between the well heater of ingot furnace and heat-insulation cage.
Preferably, described heating tube is finned tube, is arranged between the heater top of well heater and the top thermal baffle of heat-insulation cage.
Preferably, the material of described ribbed pipe, heating tube is molybdenum, tungsten or titanium.
Preferably, the pitch of the spiral-line of described deflecting gas tube outlet section reduces gradually, and the outlet of deflecting gas tube is positioned at the lower surface in guide shell portion; Or,
The pitch of the spiral-line of described deflecting gas tube outlet section reduces gradually, radius increases gradually, and the outlet of deflecting gas tube is positioned at the lower end of the extended surface of branch chamber portion outer side wall or is positioned at the outside of extended surface of outer side wall in branch chamber portion.
Preferably, the quantity of described deflecting gas tube is 3,4 or 5, and the medullary ray round guiding device is uniformly distributed.
Preferably, the material of described guiding device is molybdenum or titanium.
The guiding device of polycrystalline ingot furnace of the present invention arrange many in order to change carrier gas stream to deflecting gas tube, the outlet of deflecting gas tube is uniformly distributed round the medullary ray of guiding device along identical angle, carrier gas is divided into many carrier gas streams through guiding device, many the different zones of penetrating liquid-state silicon surface is blown in carrier gas stream dispersion obliquely, produce the carrier gas stress circumferentially distributed around liquid-state silicon center, carrier gas stress drive upper layer liquid-state silicon flows, and forms the rotational flow field making circumferential flow in liquid-state silicon.Rotational flow field is conducive to the impurity of liquid-state silicon inside to be transported to surface, promotes the volatilization of impurity; Be conducive to assorted the transporting and be uniformly distributed of matter in liquid-state silicon, the radial resistivity of crystal evenly.The visual field led in described guiding device in ingot furnace is unobstructed, can be seen the state of silicon material in stove by the viewing window of furnace roof, be inserted the speed of growth of survey crystal bar measurement crystal; Infrared detecting group can detect the state of silicon material in stove.The cold carrier gas hot carrier gas that first formation temperature is higher after heating devices heat, then blows to the silicon material in crucible through drainage system by this hot carrier gas.When temperature lower than liquid-state silicon of the temperature of carrier gas, carrier gas from blow the less calories penetrated and take away the liquid-state silicon in region, the temperature drop of the liquid-state silicon in this region reduces greatly, the impurity forming core probability caused by carrier gas in liquid-state silicon reduces, and reduces the formation even eliminating the impurity that carrier gas promotes; When carrier gas temperature higher than blow the temperature of the liquid-state silicon of penetrating region time, carrier gas to blow the liquid-state silicon supplying heat penetrating region, the temperature of this region liquid-state silicon is raised, reduces temperature head radial in liquid-state silicon, suppress the impurity forming core in this region liquid-state silicon and impurity nucleus growth.
Beneficial effect
Reduce that even to eliminate in liquid-state silicon the local caused by carrier gas excessively cold, by arranging the heating unit of carrier gas, cold carrier gas first forms hot carrier gas through heating devices heat, hotter carrier gas is blown and penetrate liquid-state silicon; When temperature lower than liquid-state silicon of the temperature of hot carrier gas, carrier gas from blow and penetrate the heat taken away the liquid-state silicon in region and greatly reduce, the temperature drop of this region liquid-state silicon significantly reduces, condensate depression reduces, the forming core probability of the impurity that in liquid-state silicon, carrier gas causes reduces, and reduces the impurity formation even eliminating carrier gas and promote; When temperature higher than liquid-state silicon of the temperature of hot carrier gas, carrier gas to blow the liquid-state silicon supplying heat penetrating region, the temperature of liquid-state silicon is raised, reduce temperature head radial in liquid-state silicon, suppress the impurity forming core in this region liquid-state silicon, eliminate the formation of the impurity that carrier gas promotes, improve the quality of crystal.
There is in the viewing window of furnace roof the visual field led in ingot furnace, outside by a portion/guide shell portion that connects (branch chamber portion) the air inlet platform portion (inlet pipe portion) of guiding device being arranged on guiding device, the visual field leading to ingot furnace inside in guiding device is not blocked; The situation in ingot furnace can be watched by the viewing window of furnace roof, facilitate stoker to operate; Surveying crystal bar can be inserted in ingot furnace through guiding device, and the speed of growth of crystal is convenient for measuring; Infrared detecting group is by the state of silicon material in the detectable ingot furnace of viewing window, and long brilliant technique is carried out smoothly automatically.
The local temperature drop that in further minimizing liquid-state silicon, carrier gas causes, multiple flow-guiding channels of guiding device make carrier gas be divided into multi beam carrier gas stream, the different zones of penetrating liquid-state silicon surface is blown in the dispersion of multi beam carrier gas stream obliquely, effectively increase the contact area on carrier gas and liquid-state silicon surface, the heat that carrier gas stream is taken away this unit surface reduces further, the local temperature drop that carrier gas stream causes reduces, and further minimizing even avoids the local temperature drop caused by carrier gas in liquid-state silicon.
Promote that impurity volatilization and impurity are uniformly distributed, improve the quality of crystal, multiple flow-guiding channels of guiding device are uniformly distributed around the medullary ray of guiding device, carrier gas is divided into multi beam carrier gas stream through flow-guiding channel, carrier gas stream blows the different zones of penetrating liquid-state silicon surface respectively obliquely, carrier gas stream blow and penetrate the central distribution of region around liquid-state silicon surface, carrier gas stream liquid towards silicon produces the carrier gas stress driving laminar flow, carrier gas stress drive liquid-state silicon flowing, forms the rotational flow field around its center flow.Rotational flow field to be conducive to the Impurity Transport of liquid-state silicon surface flotation, to liquid-state silicon edge, reducing the impact of floating impurity on crystal yield, improves the yield rate of crystal; Also help the surface of the Impurity Transport of liquid-state silicon inside to liquid-state silicon, accelerate the volatilization of impurity in liquid-state silicon; Liquid-state silicon, under the acting in conjunction of natural convection flow field and rotational flow field, is conducive to assorted the transporting and be uniformly distributed of matter in liquid-state silicon, avoids the enrichment of impurity local, make the radial resistivity distribution of crystal evenly, the quality of crystal is further enhanced.
Accompanying drawing explanation
A kind of structural representation of the polycrystalline ingot furnace of Fig. 1 embodiment 1.
The another kind of structural representation of the polycrystalline ingot furnace of Fig. 2 embodiment 1.
The enlarged diagram in heat-insulation cage region in Fig. 3 Fig. 2.
A-A direction view in Fig. 4 Fig. 3.
A kind of structural representation of the polycrystalline ingot furnace of Fig. 5 embodiment 2.
The enlarged diagram of a-quadrant in Fig. 6 Fig. 5.
The structural representation of Fig. 7 guiding device 20.
Fig. 8 connects the structural representation of cylinder 21.
B-B direction view in Fig. 9 Fig. 8.
The left side view of cylinder 21 is connected in Figure 10 Fig. 8.
The elevational schematic view of Figure 11 guide shell 22.
The another kind of structural representation of Figure 12 guide shell 22.
C-C direction view in Figure 13 Figure 12.
A kind of structural representation of the polycrystalline ingot furnace of Figure 14 embodiment 3.
The enlarged diagram in B region in Figure 15 Figure 14.
A kind of structural representation of Figure 16 guiding device 30.
E-E direction view in Figure 17 Figure 16.
The left side view of guiding device 30 in Figure 18 Figure 16.
The elevational schematic view of the guiding device 30 in Figure 19 Figure 16.
The another kind of structural representation of Figure 20 guiding device 30.
F-F direction view in Figure 21 Figure 20.
A kind of structural representation of the polycrystalline ingot furnace of Figure 22 embodiment 4.
The enlarged diagram in C region in Figure 23 Figure 22.
A kind of structural representation of Figure 24 guiding device 40.
G-G direction view in Figure 25 Figure 24.
In figure, 11-body of heater, 12-drainage system, 13-cage, 131-elevating screw, 14-heat-insulation cage, 15-well heater, 16-heat exchange platform, 17-graphite column, 18-crucible, 19-silicon material, 90-infrared detecting group, 50-pneumatic tube, 20, 30, 40-guiding device, 60-heating unit, 61 connect pipeline, 111-upper furnace body, 112-lower furnace body, 113-top end cover, 114-viewing window, 121-connects nut, 122-thrust-augmenting nozzle, 123-carbon tube, 141-side thermal baffle, 142-pushes up thermal baffle, thermal baffle at the bottom of 143-, 151-side well heater, 152-heater top, 181-graphite base plate, 182-graphite protective plate, 183-cover plate, 21-connects cylinder, 22-guide shell, 222, 36-water conservancy diversion air flue, 217, 37, 46-internal thread, 224-outside screw, 223-flange, 211-connects a portion, 212, 32-air inlet platform portion, 213-air inlet port, 214, 34-is communicated with air flue, 216-ring-shaped step, 215-first branch chamber, 221-second branch chamber, 31-guide shell portion, 35-branch chamber, 41-branch chamber portion, 42-inlet pipe portion, 43-deflecting gas tube, 44-communicating pipe, 45-fastening part.
Embodiment
In order to illustrate technical scheme of the present invention and technical purpose, below in conjunction with the drawings and the specific embodiments, the present invention is described further.
Embodiment 1
A kind of polycrystalline ingot furnace with carrier gas heating unit of the present invention, as shown in Figure 1 and Figure 2, described polycrystalline ingot furnace comprises ingot furnace body 10 and the heating unit 60 for heating carrier gas, heating unit 60 is connected with ingot furnace body 10, for the hot carrier gas after heating is transported to ingot furnace inside, blow the silicon material 19 penetrated in crucible, carrier gas is carried to the impurity volatilized in silicon material 19 outside stove again, to improve purity and the quality of crystal.
Described ingot furnace body 10 comprises body of heater 11, cage 13, elevating screw 131, heat-insulation cage 14, well heater 15, heat exchange platform 16, graphite column 17, carbon tube 123, drainage system 12, infrared detecting group 90 and copper electrode (not shown in FIG.).Body of heater 11 comprises upper furnace body 111, lower furnace body 112 and top end cover 113, and described upper furnace body 111 covers on lower furnace body 112, and top end cover 113 covers the top end opening at upper furnace body 111.The middle part of top end cover 113 is provided with viewing window 114.6 copper electrodes are assemblied on the furnace roof of upper furnace body 111, are distributed in the surrounding of the top end opening of body of heater, and fix with furnace roof insulated enclosure.Described cage 13 is configured to by 4 sidewalls, end face and bottom surface opening.Cage 13 is arranged in body of heater 11, is hung on the furnace roof of upper furnace body 111 by elevating screw 131.Described heat-insulation cage 14 is the square cavity be made up of side, four sides thermal baffle 141, one side top thermal baffle 142 and one side end thermal baffle 143.Described heat-insulation cage 14 is arranged in cage 13, side, the four sides thermal baffle 141 of heat-insulation cage 14 is separately fixed at the inner side of the four sides sidewall frame of cage 13, top thermal baffle 142 is suspended on by the limited step on copper electrode on the furnace roof of upper furnace body 111, and being positioned at side, four sides thermal baffle 141, end thermal baffle 143 is assemblied in the top of lower furnace body 112 furnace bottom by the ring-shaped step in the middle part of graphite column 17.Well heater 15 comprises side well heater 151 and heater top 152, and well heater 15 is arranged in heat-insulation cage 14.Side well heater 151 is arranged on the inwall side of the side thermal baffle 141 of heat-insulation cage, therebetween interval 4-12cm; Heater top 15 is arranged on the side, lower surface of the top thermal baffle 142 of heat-insulation cage, therebetween interval 5-15cm.Well heater 15 is fixedly connected with respectively with the copper electrode be fixed on upper furnace body 111 furnace roof.It is inner that heat exchange platform 16 is positioned at heat-insulation cage 14, and heat exchange platform 16 is assemblied on the furnace bottom of lower furnace body 112 by three graphite columns 17, and is positioned at the top of the end thermal baffle 143 of heat-insulation cage 14.Heat exchange platform 16 is placed square graphite base plate 181, graphite base plate 181 is placed crucible 18, four avris of graphite base plate 181 are upright respectively places 4 pieces of graphite protective plate 182, and the outer side wall of graphite protective plate 182 and crucible 18 fits, and adopts bolt to fix between adjacent two pieces of graphite protective plate 182.The upper surface of graphite protective plate 182 covers square cover plate 183, the middle part of cover plate 183 is provided with the through hole for delivery of carrier gas.Therefore, described graphite base plate 181, graphite protective plate 182, cover plate 183 form quadrangle box, and are positioned at the inside of well heater 15.Described drainage system 12 comprise axially connect successively carbon tube 123, connect nut 121 and drainage tube 122.The upper end of drainage tube 122 is provided with and connects the outside screw that nut 121 internal thread matches.The upper end of drainage tube 122 is through the through hole in the middle part of the top thermal baffle 142 of heat-insulation cage 14, and the nut 121 that connects be arranged on above the thermal baffle 142 of top is fastened.Described carbon tube 123 be assemblied in connect nut 121 and top end cover 113 viewing window 114 between.Infrared detecting group 90 is fixed on top end cover 113, the probe viewed straight-on window 114 of bottom.
Described heating unit 60 is airheater, as shown in Figure 1, is arranged on the outside of ingot furnace body 10.The structure ecto-entad of airheater is followed successively by the pipeline of the roundabout shape of housing, thermofin, heating member and carrier gas of circulating.Described pipeline is the ribbed pipe that outside is provided with fin, also can use light pipe; Described pipeline section is oval, also can rectangle, and in order to increase heat interchanging area, strengthen by thermal effect, namely airheater is rib-pipe type airheater.Described housing is steel construction, and the material of thermofin is carbon fiber felt, and the material of heating member is graphite, also can be tungsten filament; The material of ribbed pipe is molybdenum, also can be tungsten or titanium, and with the high temperature making carrier gas can be heated to 1500 DEG C, and carrier gas is not contaminated.One end of pipeline is set to the output terminal of airheater, and the other end is the input terminus of airheater.The output terminal of described airheater is communicated with by connecting pipeline 61 with drainage system 12 upper end of ingot furnace, and as shown in Figure 1, the input terminus of airheater is communicated with the pneumatic tube 50 of carrier gas.The described material connecting pipeline 61 is molybdenum, outside coated thermofin, to reduce the heat losses of carrier gas.
Described heating unit 60 also can be heating tube, and as shown in Figure 2,3, 4, heating tube is arranged in heat-insulation cage, between the heater top and the top thermal baffle of heat-insulation cage of well heater, by the carrier gas in the passive heating tube of absorptive thermal radiation energy.The roundabout distribution of described heating tube, preferably, extends distribution along snail line, as shown in Figure 4.Wherein, one end that heating tube is positioned at helical sun is the output terminal of heating tube, and the one end being positioned at spirrillum avris is the input terminus of heating tube, also U-shaped roundabout distribution can be adopted, U-shaped roundabout distribution can destroy the symmetry in former temperature field, affects crystal normal growth, seldom adopts.Heating tube, along the distribution of snail line, is conducive to the symmetry of holding temperature field, reduces heating tube to former temperature profile effect, guarantees crystal normal growth.In order to increase by thermal effect, the cross section of heating tube is oval, also can rectangle; Further at the outer setting fin of heating tube, to increase the heating surface area of heating tube, strengthen heating tube to the heating efficiency of carrier gas.The sidewall of the drainage tube 122 of drainage system 12 is arranged and connects the through hole that pipeline 61 can pass, as shown in Figure 3, connecting pipeline 61 be pipeline in L-type, and it through the above-mentioned through hole on drainage tube 122 sidewall, and extend in drainage system 12, exports and arranges downwards.Described heating tube and the material connecting pipeline 61 are molybdenum, also can be tungsten or titanium.The output terminal of described heating tube is connected pipeline 61 realized being connected with drainage system 12 by this, and the input terminus of heating tube is communicated with the pneumatic tube 50 of carrier gas.
The polycrystalline ingot furnace of present embodiment is with carrier gas heating unit, and the hot carrier gas that cold carrier gas formation temperature after heating devices heat is higher, blows through drainage system the silicon material penetrated in crucible by this hot carrier gas.The disturbance in the temperature field in hot carrier gas liquid towards silicon is little, not easily makes, in liquid-state silicon, constitutional supercooling occurs, and suppresses the impurity supersaturation forming core in liquid-state silicon and impurity nucleus growth, and the impurity reduced in crystal generates, and improves the quality of crystal.When temperature lower than liquid-state silicon of the temperature of carrier gas, carrier gas from blow the less calories penetrated and take away the liquid-state silicon of region, carrier gas blow the local temperature drop penetrating region liquid-state silicon and greatly reduce, condensate depression reduces, the forming core probability of the impurity that in liquid-state silicon, carrier gas causes reduces, and reduces the formation even eliminating the impurity that carrier gas promotes; When carrier gas temperature higher than blow the temperature of penetrating region liquid-state silicon time, carrier gas to blow the liquid-state silicon supplying heat penetrating region, the temperature of this region liquid-state silicon is raised, reduce temperature head radial in liquid-state silicon, suppress the impurity forming core in this region liquid-state silicon, eliminate the formation of the impurity that carrier gas promotes, improve the quality of crystal.
Embodiment 2
The difference of embodiment 2 and embodiment 1 is only: be provided with guiding device 20 in polycrystalline ingot furnace, as shown in Figure 5, Figure 6, guiding device 20 is for being divided into carrier gas multi beam outgoing carrier gas stream, outgoing carrier gas stream blows the different zones of penetrating liquid-state silicon surface respectively obliquely, form the carrier gas stress around liquid-state silicon central distribution, carrier gas stress drive liquid-state silicon flows, and in liquid-state silicon, form the rotational flow field making circumferential flow.The outside of guiding device 20 is provided with the air inlet port 213 of carrier gas inflow.Heating unit 60 adopts above-mentioned airheater, then the output terminal of airheater is communicated with (not shown in FIG.) by connecting pipeline 61 with the air inlet port 213 of guiding device 20, and input terminus is communicated with the pneumatic tube 50 of carrier gas; The described coated thermofin in outside connecting pipeline 61, to reduce the heat losses of carrier gas.Heating unit 60 can also adopt above-mentioned heating tube, then the output terminal of heating tube is connected with the air inlet port 213 of guiding device 20 by connecting pipeline 61, and input terminus is communicated with the pneumatic tube 50 of carrier gas; Connect the coated thermofin in outside that pipeline 61 is positioned at top thermal baffle 142 upper section.
Wherein, described guiding device 20 comprises and connects cylinder 21 and guide shell 22, as shown in Figure 6, Figure 7, described in connect cylinder 21 bottom internal thread 217 is set, the upper end of guide shell 22 is provided with outside screw 224; The outside screw 224 of the internal thread 217 and guide shell 22 that connect cylinder 21 matches.The middle part of guide shell 22 is provided with does along its outside surface the flange 223 that circumference extends, and as shown in Fig. 7, Figure 12, flange 223, around guide shell 22 outside surface one week, the surface of guide shell 22 forms bulge-structure in the form of a ring, spacing a, fixed action.In assembling, the upper end of guide shell 22 through the through hole in the middle part of the top thermal baffle 142 of heat-insulation cage 14, and is arranged on and connects cylinder 21 axially assembling above the thermal baffle 142 of top, connects cylinder 21 and guide shell 22 is fastenedly connected by above-mentioned internal and external screw thread 217,224.Connecting cylinder 21 and flange 223 acting in conjunction is fixed on guide shell 22 on the thermal baffle 142 of top, as shown in Figure 6.Described carbon tube 123 be assemblied in connect cylinder 21 and top end cover 113 viewing window 114 between.The described material connecting cylinder 21 and guide shell 22 is graphite, is preferentially isostatic pressing formed graphite, also can be the metal molybdenum or titanium that cost is higher.
Wherein, describedly connect cylinder 21, as shown in Figure 8, Figure 9, comprise and connect a portion 211 and air inlet platform portion 212, connect a portion 211 and be provided with the right cylinder with its concentrically through hole of line for middle part, be cylinder, the top connecting a portion 211 arranges the counterbore that internal diameter is greater than this through hole, described counterbore and through hole concentrically line, this counterbore and through hole acting in conjunction make the top connecting a portion 211 form ring-shaped step 216.Described ring-shaped step 216 for assembling for transporting the carbon tube 123 of carrier gas in prior art, as shown in Figure 6.First branch chamber 215 of lower ending opening is set in the barrel connecting a portion 211, first branch chamber 215 is around connecting a portion 211 medullary ray chamber in the form of a ring of a week, first branch chamber 215 and connect a portion 211 concentrically line, as shown in Figure 8, Figure 9, the first branch chamber 215 is positioned at the below of ring-shaped step 216.The described bottom connecting a portion 211 arranges above-mentioned internal thread 217, is positioned at the below of the first branch chamber 215.Described internal thread 217 along connect a portion 211 centerline direction extend, and and connect a portion 211 concentrically line, as shown in Figure 8.Described air inlet platform portion 212 is arranged on the outside connecting a portion 211, and as shown in Figure 9, Figure 10, air inlet platform portion 212 and to connect a portion 211 one-body molded, avoids the difficult problem that graphite material parts are not easily fixedly connected with.The air inlet port 213 being used for carrier gas and flowing into is set in described air inlet platform portion 212, axial line and the axis perpendicular connecting a portion 211 of air inlet port 213, as as described in Fig. 9, Figure 10, tangently between described air inlet port 213 with the first branch chamber 215 to be communicated with, and be arranged on the left side of the first branch chamber 215, shown in Figure 10, (see from the top down) in a clockwise direction to make the carrier gas stream in air inlet port 213 and flow in the first branch chamber 215.The axial line of described air inlet port 213 also can parallel with the axis connecting a portion 211 (not shown in FIG.), according to assembling needs, the opening upwards of air inlet port 213 is arranged, and also can arrange downwards, needs to be communicated with by being communicated with air flue between air inlet port 213 with the first branch chamber 215; Described connection air flue is arranged along clockwise direction and (is seen from the top down, not shown in FIG.), the end being communicated with air flue is communicated with air inlet port 213 is tangent, the other end is communicated with the sidewall of the first branch chamber 215 is tangent, carrier gas stream in described connection air flue flows in the first branch chamber 215 in a clockwise direction, and the carrier gas in the first branch chamber 215 is being flowed in a clockwise direction.
Wherein, described guide shell 22 is provided with the right cylinder with its concentrically through hole of line for middle part, is cylinder.Guide shell 22 upper end arranges above-mentioned outside screw 224, and as shown in Fig. 7,12, this outside screw 224 and above-mentioned internal thread 217 match.The second branch chamber 221, second branch chamber 221 arranging upper surface opening in the barrel of guide shell 22 upper end is around the guide shell 22 medullary ray chamber in the form of a ring of a week, as shown in Fig. 7, Figure 12.Described outside screw 224 is nested in the outside of the outer side wall of the second branch chamber 221.Described second branch chamber 221, outside screw 224 and guide shell 22 concentrically line.Described second branch chamber 221 and the first branch chamber 215 corresponding, namely the upper end open of the second branch chamber 221 is just relative with the first branch chamber 215 lower ending opening.Arrange 4 water conservancy diversion air flues 222 in the barrel of described guide shell 22, as shown in Fig. 9, Figure 11,4 water conservancy diversion air flues 222 are uniformly distributed round the medullary ray of guide shell 22, as shown in Figure 9.Water conservancy diversion air flue 222 also can be more than 2 or 3 or 5.This water conservancy diversion air flue 222 is along columned spiral-line to downward-extension from the lower surface of the second branch chamber 221, and namely the medullary ray of water conservancy diversion air flue 222 is along hand of helix to downward-extension, and and this spiral-line coincidence.The non-uniform pitch of described spiral-line, the pitch of the long bottom of pitch of upper end is short, and the pitch of water conservancy diversion air passage outlet section is the shortest; Spiral-line is positioned at the barrel of guide shell 22, is rotated in a clockwise direction (when seeing from the top down), identical with the direction that carrier gas stream in air inlet port 213 flows in the first branch chamber 215, spiral-line and guide shell 22 concentrically line.The import of the upper end of water conservancy diversion air flue 222 is communicated with the lower surface of the second branch chamber 221, and the outlet of the bottom of water conservancy diversion air flue 222 is positioned at the lower end of guide shell 22, as shown in Fig. 7, Figure 12.
Described air inlet port 213 is communicated with the first branch chamber 215 is tangent, seamlessly transits in connectivity part.So can reduce the resistance of carrier gas circulation, make the kinetic energy that carrier gas keeps higher, enter first and second branch chamber 215,221, carrier gas rotates in first and second branch chamber, has longer flow process, is conducive to carrier gas and flows into more equably in water conservancy diversion air flue 222.Carrier gas is flowed along identical sense of rotation with water conservancy diversion air flue 222 by described air inlet port the 213, the 1 branch chamber 215,221, the carrier gas circulating resistance run into that circulates is less, kinetic energy loss is less, the exit that carrier gas flows to water conservancy diversion air flue 222 still has higher energy, carrier gas is made to have higher exit velocities, outgoing carrier gas stream liquid towards silicon produces larger carrier gas stress, helps lend some impetus to the liquid-state silicon flowing of upper layer, produces stronger rotational flow field in liquid-state silicon.
By changing pitch and the radius of the spiral-line of water conservancy diversion air flue 222 outlet section, the outlet of design water conservancy diversion air flue 222 is positioned at the position of the bottom of guide shell 22, and the exit direction of the carrier gas stream in the exit of this water conservancy diversion air flue 222, be also the tangential direction of the medullary ray in the exit of water conservancy diversion air flue 222.When the pitch of the spiral-line of the outlet section of described water conservancy diversion air flue 222 reduces gradually, radius is constant, the outlet of water conservancy diversion air flue 222 is positioned on the lower surface of guide shell 22, as shown in figure 11, angle (angle between tangent line dough-kneading method line) between the tangent line (i.e. the exit direction of carrier gas) of the medullary ray in the exit of water conservancy diversion air flue 222 and the lower surface (being parallel to liquid-state silicon surface) of guide shell 22 increases gradually, and the carrier gas stress of outgoing carrier gas stream liquid towards silicon reduces by wash rice; When internal diameter close to the hole of water conservancy diversion air flue 222 of the pitch in water conservancy diversion air flue 222 exit, angle between the tangent line of the medullary ray in the exit of water conservancy diversion air flue 222 and guide shell 22 lower surface (being parallel to liquid-state silicon surface) is close to 90 degree, namely the tangent line of water conservancy diversion air flue 222 exit medullary ray with guide shell 22 lower surface close to parallel, now outgoing carrier gas stream and liquid-state silicon surface are close to parallel, and the carrier gas stress of outgoing carrier gas stream liquid towards silicon is minimum.In addition, can also need in base area, change pitch and the radius of the spiral-line of water conservancy diversion air flue 222 outlet section, the pitch of the spiral-line of the outlet section of water conservancy diversion air flue 222 is reduced gradually, radius increases gradually, then the outlet of water conservancy diversion air flue 222 is positioned at the lower end of guide shell 22 outer side, also the outer side of guide shell 22 and friendship place of lower surface can be positioned at, as Figure 12, shown in 13, to facilitate the Way out of design water conservancy diversion air flue 222, optimize outgoing carrier gas stream blowing on liquid-state silicon surface and penetrate region, when nebulizer gas pressure is determined, make in liquid-state silicon, to produce stronger rotational flow field.
Present embodiment is arranged on air inlet platform portion 212 outside connecting a portion 211, and the visual field led in guiding device in ingot furnace is not blocked.The viewing window 114 of furnace roof has through guiding device 20 visual field led in ingot furnace, and operator can see the state of silicon material in stove by viewing window 114, guiding device 20, facilitate stoker to operate; Be fixed on infrared detecting group 90 above viewing window 114 can detect silicon material in stove state through viewing window, guiding device, long brilliant technique is successfully carried out automatically; Can be inserted in ingot furnace by survey crystal bar by guiding device, crystalline growth velocity is convenient for measuring.
The guiding device 20 of present embodiment polycrystalline ingot furnace is built-in 4 in order to change carrier gas stream to water conservancy diversion air flue, water conservancy diversion air flue distributes round the medullary ray of guiding device, the outlet of water conservancy diversion air flue is uniformly distributed along identical angle around the medullary ray of guiding device, as shown in figure 13.Carrier gas is divided into 4 carrier gas streams through 4 water conservancy diversion air flues of guiding device, these 4 carrier gas streams blow 4 regions penetrating liquid-state silicon surface respectively dispersedly, these 4 regions are round the central distribution of liquid-state silicon, suitably reduce the angle between outgoing carrier gas stream and liquid-state silicon surface, preferably 30-40 degree, outgoing carrier gas stream is made to blow the surface penetrating liquid-state silicon obliquely, outgoing carrier gas stream liquid towards silicon produces the carrier gas stress of larger driving laminar flow, carrier gas stress is round the central distribution of liquid-state silicon, carrier gas stress drive upper layer liquid-state silicon flows, and in liquid-state silicon, form the rotational flow field making circumferential flow.Rotational flow field is conducive to, the edge of the Impurity Transport of liquid-state silicon surface flotation to liquid-state silicon, reducing the impact of floating impurity on crystal yield, improves the yield rate of crystal; Also help simultaneously and the impurity of liquid-state silicon inside is transported to surface, promote the volatilization of impurity; Liquid-state silicon, under the acting in conjunction of natural convection flow field and rotational flow field, is conducive to assorted the transporting and be uniformly distributed of matter in liquid-state silicon, the radial resistivity of crystal evenly, the quality of crystal is further enhanced.Guiding device makes carrier gas blow the different zones of penetrating liquid-state silicon surface dispersedly, effectively increase the contact area on carrier gas stream and liquid-state silicon surface, the load volume that unit surface contacts reduces, then carrier gas from blow the less calories penetrated and take away the liquid-state silicon of region, this regional temperature range of decrease is little, liquid-state silicon constitutional supercooling degree reduces, and effectively can reduce carrier gas and blow and penetrate impurity forming core in the liquid-state silicon of region and impurity nucleus growth.
Embodiment 3
The difference of embodiment 3 and embodiment 1 is only: polycrystalline ingot furnace is built-in with guiding device 30, as shown in Figure 14, Figure 15, and the drainage tube 122 bottom axial restraint of guiding device 30 and drainage system 12.Described guiding device 30 is for being divided into carrier gas multi beam outgoing carrier gas stream, outgoing carrier gas stream blows the different zones of penetrating liquid-state silicon surface respectively obliquely, form the carrier gas stress circumferentially distributed around liquid-state silicon center, carrier gas stress drive liquid-state silicon flows, and forms the rotational flow field making circumferential flow in liquid-state silicon.The air inlet port 33 that the carrier gas of guiding device 30 outer setting flows into.Heating unit 60 adopts the above-mentioned heating tube be arranged in heat-insulation cage, then the output terminal of heating tube is connected with the air inlet port 33 of guiding device 30 by connecting pipeline 61, and input terminus is communicated with the pneumatic tube 50 of carrier gas.Heating unit 60 can also adopt above-mentioned airheater, then the output terminal of airheater is communicated with by connecting pipeline 61 with the air inlet port 33 of guiding device 30, and input terminus is communicated with the pneumatic tube 50 of carrier gas; Describedly connect the coated thermofin in outside that pipeline 61 is positioned at the part outside body of heater, to reduce the heat losses of carrier gas.
Wherein, described guiding device 30, as shown in Figure 16, Figure 17, comprise guide shell portion 31 and air inlet platform portion 32, the material in guide shell portion 31 and air inlet platform portion 32 is the graphite that price is lower, is preferably isostatic pressing formed graphite, also can be the molybdenum that cost is higher or titanium.Described guide shell portion 31 is provided with the cylinder of centrally line direction through hole for middle part, this through hole and guide shell portion 31 concentrically line, the upper end in guide shell portion 31 arranges the internal thread 37 for being fixedly connected with, internal thread 37 extends along the centerline direction in guide shell portion 31, also can arrange outside screw as required.Branch chamber 35 is circumferentially set in the barrel of upper end, described guide shell portion 31, branch chamber 35 is around the guide shell portion 31 medullary ray airtight chamber in the form of a ring of a week, branch chamber 35 is positioned at the below of described internal thread 37, and with guide shell portion 31 concentrically line.Described air inlet platform portion 32 is arranged on the outside in guide shell portion 31, as shown in figure 17, guide shell portion 31 and air inlet platform portion 32 one-body molded, avoid the difficult problem that graphite material parts are not easily fixedly connected with.The air inlet port 33 being used for carrier gas and flowing into is set in described air inlet platform portion 32, the axial line of air inlet port 33 and the axial line in guide shell portion 31 perpendicular, air inlet port 33 is communicated with the sidewall of branch chamber 35 is tangent, as shown in figure 17, and make smoothing processing in connectivity part, to reduce the resistance of carrier gas circulation.The opening of air inlet port 33 is positioned at left side, and as shown in Figure 17, Figure 18, (see from the top down) along clockwise direction to make carrier gas stream in air inlet port 33 and flow in branch chamber 35, carrier gas is flowed along clockwise direction in branch chamber 35.The axial line of described air inlet port 33 also can parallel (not shown in FIG.) with the axial line in guide shell portion 31, according to assembling needs, the opening upwards of air inlet port 33 is arranged, and also can arrange downwards, is communicated with between air inlet port 33 with branch chamber 35 by being communicated with air flue; Described connection air flue is arranged along clockwise direction and (is seen from the top down, not shown in FIG.), the end being communicated with air flue is communicated with air inlet port 33 is tangent, the other end is communicated with the side of branch chamber 35 is tangent, and the carrier gas stream in described connection air flue flows in branch chamber 35 in a clockwise direction.
Arrange 4 water conservancy diversion air flues 36 in the barrel in described guide shell portion 31, water conservancy diversion air flue 36 is uniformly distributed round the medullary ray in guide shell portion 31, as shown in Figure 17,19,21.This water conservancy diversion air flue 36 is along cylindrical helix to downward-extension from the lower surface of branch chamber 35, and namely the medullary ray of water conservancy diversion air flue 36 is along hand of helix to downward-extension, and and this spiral-line coincidence.The non-uniform pitch of described spiral-line, the pitch of the spiral-line in water conservancy diversion air flue 36 exit is the shortest, spiral-line is positioned at the barrel in guide shell portion 31, spiral-line is rotated in a clockwise direction (when seeing from the top down), identical with the flow direction of carrier gas stream in branch chamber 35, spiral-line and guide shell portion 31 axial line altogether.The import of the upper end of described water conservancy diversion air flue 36 is communicated with the lower surface of branch chamber 35, and the outlet of bottom is positioned at the lower end in guide shell portion 31.
Described air inlet port 33 is communicated with branch chamber 35 is tangent, seamlessly transits in connectivity part.Mode layout like this can reduce the resistance of carrier gas circulation, reduces the energy waste of carrier gas, and the kinetic energy making carrier gas keep higher, enters branch chamber 35, rotates, have longer flow process, be conducive to carrier gas and flow into more equably in water conservancy diversion air flue 36 in branch chamber 35.Described carrier gas passes through air inlet port 33, branch chamber 35 with water conservancy diversion air flue 36 along identical direction rotational flow, the carrier gas circulating resistance run into that circulates is less, kinetic energy loss is less, the exit that carrier gas flows to water conservancy diversion air flue 36 still has higher energy, carrier gas is made to have higher exit velocities, outgoing carrier gas stream liquid towards silicon produces larger carrier gas stress, helps lend some impetus to liquid-state silicon flowing, produces stronger rotational flow field in liquid-state silicon.
By changing pitch and the radius of the spiral-line of water conservancy diversion air flue 36 outlet section, the outlet of design water conservancy diversion air flue 36 is positioned at the position of the bottom in guide shell portion 31, and the exit direction of the carrier gas stream in this water conservancy diversion air flue 36 exit, be also the tangential direction of medullary ray in exit of water conservancy diversion air flue 36.When the pitch of the spiral-line of described water conservancy diversion air flue 36 outlet section reduces gradually, radius is constant, the outlet of water conservancy diversion air flue 36 is positioned on the lower surface in guide shell portion 31, as shown in figure 19, the angle (angle between tangent line dough-kneading method line) of medullary ray between the tangent line (i.e. the exit direction of carrier gas stream) in exit and the lower surface (being parallel to liquid-state silicon surface) in guide shell portion 31 of water conservancy diversion air flue 36 increases gradually, and the carrier gas stress of outgoing carrier gas stream liquid towards silicon reduces; When aperture close to water conservancy diversion air flue 36 of the pitch of the spiral-line in water conservancy diversion air flue 36 exit, angle between tangent line in exit of the medullary ray of water conservancy diversion air flue 36 and lower surface, guide shell portion 31 (being parallel to liquid-state silicon surface) is close to 90 degree, namely the tangent line of the medullary ray of water conservancy diversion air flue 36 in exit and lower surface, guide shell portion 31 are close to parallel, now outgoing carrier gas stream and liquid-state silicon surface are close to parallel, and the carrier gas stress of outgoing carrier gas stream liquid towards silicon is minimum.In addition, can also be as required, change pitch and the radius of the spiral-line of water conservancy diversion air flue 36 outlet section, the pitch of the spiral-line of this outlet section is reduced gradually, radius increases gradually, then the outlet of water conservancy diversion air flue 36 is positioned at the lower end of guide shell portion 31 outer side, also the outer side in guide shell portion 31 and friendship place of lower surface can be positioned at, as Figure 20, shown in Figure 21, to facilitate the Way out of design water conservancy diversion air flue 36, optimize outgoing carrier gas stream blowing on liquid-state silicon surface and penetrate region, as made its mid-way between liquid-state silicon center and liquid-state silicon edge, when nebulizer gas pressure is certain, make in liquid-state silicon, to produce stronger rotational flow field.
Present embodiment is arranged on the outside in guide shell portion 31 air inlet platform portion 32, and the visual field led in guiding device 30 in ingot furnace is not blocked.Viewing window 114 has through guiding device 30 visual field led in ingot furnace, and operator can see the state of silicon material in stove from viewing window 114, facilitates stoker to operate; Be fixed on infrared detecting group 90 above viewing window 114 can detect silicon material in stove state through viewing window, guiding device, long brilliant technique is successfully carried out automatically; Can be inserted in ingot furnace by survey crystal bar by guiding device, crystalline growth velocity is convenient for measuring.
The guiding device 30 of present embodiment ingot furnace is built-in 4 in order to change carrier gas stream to water conservancy diversion air flue, water conservancy diversion air flue distributes round the medullary ray of guiding device, the outlet of water conservancy diversion air flue is uniformly distributed along identical angle, as shown in Figure 19,21 around the medullary ray of guiding device.Carrier gas is divided into 4 bundle carrier gas streams through 4 water conservancy diversion air flues of guiding device, this 4 bundle carrier gas stream blows respectively dispersedly penetrates liquid-state silicon surface, form 4 on the surface in liquid-state silicon to blow and penetrate region, described 4 are blown and penetrate the central distribution of region round liquid-state silicon, suitably reduce the angle on outgoing carrier gas stream and liquid-state silicon surface, preferably 30-40 degree, outgoing carrier gas stream is made to blow the surface penetrating liquid-state silicon obliquely, outgoing carrier gas stream liquid towards silicon produces the carrier gas stress of larger driving laminar flow, carrier gas stress circumferentially distributes round liquid-state silicon center, carrier gas stress drive upper layer liquid-state silicon flows, in liquid-state silicon, then form the rotational flow field making circumferential flow.Rotational flow field is conducive to, the edge of the Impurity Transport of liquid-state silicon surface flotation to liquid-state silicon, reducing the impact of floating impurity on crystal yield, improves the yield rate of crystal; Also help simultaneously and the impurity of liquid-state silicon inside is transported to surface, promote the volatilization of impurity; Liquid-state silicon, under the acting in conjunction of natural convection flow field and rotational flow field, is conducive to assorted the transporting and be uniformly distributed of matter in liquid-state silicon, the radial resistivity distribution of crystal evenly, the quality of crystal is further enhanced.Guiding device makes carrier gas blow the different zones of penetrating liquid-state silicon surface dispersedly, effectively increase the contact area on carrier gas stream and liquid-state silicon surface, the load volume that unit surface contacts reduces, then carrier gas from blow the less calories penetrated and take away the liquid-state silicon of region, this regional temperature range of decrease reduces, liquid-state silicon constitutional supercooling degree reduces, and effectively can reduce carrier gas and blow and penetrate impurity forming core in the liquid-state silicon of region and impurity nucleus growth.
Embodiment 4
The difference of embodiment 4 and embodiment 1 is only: polycrystalline ingot furnace is built-in with guiding device 40, as shown in Figure 22, Figure 23, and the drainage tube 122 bottom axial restraint of guiding device 40 and drainage system 12.Described guiding device 40 is for being divided into carrier gas multi beam outgoing carrier gas stream, outgoing carrier gas stream blows the different zones of penetrating liquid-state silicon surface respectively obliquely, form the carrier gas stress circumferentially distributed around liquid-state silicon center, carrier gas stress drive liquid-state silicon flows, and forms the rotational flow field making circumferential flow in liquid-state silicon.The inlet pipe portion 42 that the carrier gas of guiding device 40 outer setting flows into.Heating unit 60 adopts the above-mentioned heating tube be built in heat-insulation cage 14, then the output terminal of heating tube is connected with the inlet pipe portion 42 of guiding device 40 by connecting pipeline 61, and input terminus is communicated with the pneumatic tube 50 of carrier gas.The heating unit 60 of carrier gas can also adopt above-mentioned airheater, then the output terminal of airheater is communicated with by connecting pipeline 61 with the inlet pipe portion 42 of guiding device 40, input terminus is communicated with the pneumatic tube 50 of carrier gas, describedly connect the coated thermofin in outside that pipeline 61 is positioned at the part outside body of heater, to reduce the heat losses of carrier gas.
Wherein, described guiding device 40, as shown in Figure 24, Figure 25, comprises fastening part 45, branch chamber portion 41, inlet pipe portion 42 and deflecting gas tube 43, and its material is molybdenum, also can the high temperature material such as the high titanium of use cost.Fastening part 45 is the cylinder of hollow, is arranged on the top in branch chamber portion 41, and and its axial restraint.The inwall of fastening part 45 is arranged the internal thread 46 along its centerline direction, base area needs also can arrange outside screw.Described branch chamber portion 41 is the airtight cavity of tubular ringwise, and form primarily of inner side-wall, outer side wall, upper end wall and lower end wall, inner side-wall and outer side wall are tubular, and inner side-wall is nested in outer side wall, and concentrically line.Described inlet pipe portion 42 is arranged on the outside in branch chamber portion 41, the axial line in inlet pipe portion 42 and the axis perpendicular of guiding device 40, as shown in figure 25, the outer side wall in inlet pipe portion 42 and branch chamber portion 41 is fixed, inlet pipe portion 42 is communicated with the sidewall in branch chamber portion 41 is tangent, the import in inlet pipe portion 42 is arranged on the left side in branch chamber portion 41, (sees) flowing in branch chamber portion 41 to make carrier gas stream in inlet pipe portion 42 along clockwise direction from the top down.The axial line in described inlet pipe portion 42 also can parallel (not shown in FIG.) with the axial line of guiding device 40, according to assembling needs, the opening upwards in inlet pipe portion 42 is arranged, and also can arrange downwards, is communicated with between inlet pipe portion 42 with branch chamber portion 41 by connectivity trachea; Described connectivity trachea is arranged along clockwise direction and (is seen from the top down, not shown in FIG.), one end of connectivity trachea is communicated with inlet pipe portion 42 is tangent, the other end is communicated with the sidewall in branch chamber portion 41 is tangent, carrier gas stream in described connectivity trachea (is seen from the top down) in a clockwise direction and is flowed in branch chamber portion 41, then the carrier gas in branch chamber portion 41 is flowed in a clockwise direction.The below in described branch chamber portion 41 arrange 4 in order to change carrier gas stream to deflecting gas tube 43, as shown in Figure 23,24,4 deflecting gas tube 43 are uniformly distributed around the axial line in branch chamber portion 41, and deflecting gas tube 43 also can be more than 2 or 3 or 5.Described deflecting gas tube 43 is distributed in immediately below branch chamber portion 41 along cylindrical helix, and namely the medullary ray of deflecting gas tube 43 is along hand of helix to downward-extension, and overlaps with this spiral-line, as shown in figure 24.Described spiral-line is positioned at immediately below branch chamber portion 41 lower end wall, and be non-uniform pitch spiral-line, the pitch in deflecting gas tube 43 exit is the shortest, spiral-line and branch chamber portion 41 axial line altogether.Spiral-line is rotated in a clockwise direction (when seeing from the top down), identical with the direction of carrier gas stream in branch chamber portion 41.The entrance end of the upper end of deflecting gas tube 43 is communicated with the lower end wall in branch chamber portion 41 and fixes, the outlet of the bottom of deflecting gas tube 43 is positioned at the below of branch chamber portion 41 lower end wall, and be uniformly distributed along identical angle around the medullary ray of guiding device, as shown in figure 24, facing to the different zones on liquid-state silicon surface.
Described inlet pipe portion 42 is communicated with branch chamber portion 41 is tangent, seamlessly transits in connectivity part.Mode layout like this can reduce the resistance of carrier gas circulation, reduces the energy waste of carrier gas, and the kinetic energy making carrier gas keep higher, enters branch chamber portion 41, rotates, have longer flow process, be conducive to carrier gas and flow into more equably in deflecting gas tube 43 in branch chamber portion 41.Described carrier gas is rotated along identical direction with deflecting gas tube 43 by inlet pipe portion 42, branch chamber portion 41, the carrier gas circulating resistance run into that circulates is less, kinetic energy loss is less, the exit that carrier gas flows to deflecting gas tube 43 still has higher energy, carrier gas is made to have higher exit velocities, the carrier gas stream liquid towards silicon of outgoing produces larger carrier gas stress, helps lend some impetus to liquid-state silicon flowing, produces stronger rotational flow field in liquid-state silicon.
By changing pitch and the radius of the spiral-line of deflecting gas tube 43 outlet section, the outlet of design deflecting gas tube 43 is positioned at the position below branch chamber portion 41 lower end wall, and the exit direction of the carrier gas stream in the exit of this deflecting gas tube 43, be also the tangential direction of medullary ray in exit of deflecting gas tube 43.When the pitch of the spiral-line of described deflecting gas tube 43 outlet section reduces gradually, radius is constant, the outlet of deflecting gas tube 43 is positioned at immediately below the lower end wall in branch chamber portion 41; The angle (angle between tangent line and lower end wall normal) of medullary ray between the tangent line (i.e. the exit direction of carrier gas stream) and branch chamber portion 41 lower end wall (being parallel to liquid-state silicon surface) in exit of deflecting gas tube 43 increases gradually, and the carrier gas stress of outgoing carrier gas stream liquid towards silicon reduces gradually; When external diameter close to deflecting gas tube of the pitch of the spiral-line of deflecting gas tube 43 outlet section, angle between tangent line in exit of the medullary ray of deflecting gas tube 43 and branch chamber portion 41 lower end wall (being parallel to liquid-state silicon surface) is close to 90 degree, namely the tangent line of the medullary ray of deflecting gas tube 43 in exit and branch chamber portion 41 lower end wall are close to parallel, outgoing carrier gas stream and liquid-state silicon surface are close to parallel, and now the carrier gas stress of outgoing carrier gas stream liquid towards silicon is minimum.In addition, as required, pitch and the radius of the spiral-line of deflecting gas tube 43 outlet section can also be changed, make that the pitch of the spiral-line of this outlet section reduces gradually, radius increases gradually, then the outlet of deflecting gas tube 43 is positioned at the lower end of the extended surface of branch chamber portion 41 outer side wall, also can be positioned at the outside of the extended surface of branch chamber portion 41 outer side wall; To facilitate the Way out of design deflecting gas tube 43, optimize outgoing carrier gas stream blowing on liquid-state silicon surface and penetrate region, as made it be in mid-way between liquid-state silicon center and liquid-state silicon edge, when nebulizer gas pressure is certain, make in liquid-state silicon, to produce stronger rotational flow field.
Present embodiment is arranged on the outside in branch chamber portion 41 inlet pipe portion 42, and the visual field led in guiding device 40 in ingot furnace is not blocked.Viewing window 114 on furnace roof has through guiding device 40 visual field led in ingot furnace, and operator can see the state of silicon material in stove from viewing window 114, facilitates stoker to operate; Be fixed on infrared detecting group above viewing window 114 can detect silicon material in stove state through viewing window 114, guiding device 40, long brilliant technique is successfully carried out automatically; Survey crystal bar can be inserted in ingot furnace by guiding device, crystalline growth velocity is convenient for measuring.。
Be provided with in the guiding device 40 of present embodiment ingot furnace 4 in order to change carrier gas stream to deflecting gas tube, deflecting gas tube distributes round the medullary ray of guiding device, the outlet of deflecting gas tube is uniformly distributed along identical angle around the medullary ray of guiding device, as shown in figure 24.Carrier gas is divided into 4 bundle carrier gas streams through 4 deflecting gas tube of guiding device, and this 4 bundle carrier gas stream blows dispersedly and penetrates liquid-state silicon surface, forms 4 on the surface blow and penetrate region in liquid-state silicon, and 4 are blown and penetrate the central distribution of region around liquid-state silicon.Suitably reduce the angle between outgoing carrier gas stream and liquid-state silicon surface, preferably 30-40 degree, make outgoing carrier gas stream blow the surface penetrating liquid-state silicon obliquely, outgoing carrier gas stream produces the carrier gas stress of larger driving laminar flow to blowing the liquid-state silicon of penetrating region, carrier gas stress drive upper layer liquid-state silicon flows; Carrier gas stress circumferentially distributes round liquid-state silicon center, then in liquid-state silicon, form the rotational flow field making circumferential flow.Rotational flow field is conducive to, the edge of the Impurity Transport of liquid-state silicon surface flotation to liquid-state silicon, reducing the impact of floating impurity on crystal yield, improves the yield rate of crystal; Also help simultaneously and the impurity of liquid-state silicon inside is transported to surface, promote the volatilization of impurity; Liquid-state silicon, under the acting in conjunction of natural convection flow field and rotational flow field, is conducive to assorted the transporting and be uniformly distributed of matter in liquid-state silicon, avoids the enrichment of impurity local, the radial resistivity distribution of crystal evenly, the quality of crystal is further enhanced.Guiding device makes carrier gas blow the different zones of penetrating liquid-state silicon surface dispersedly, effectively increase the contact area on carrier gas stream and liquid-state silicon surface, the load volume that unit surface contacts reduces, then carrier gas from blow the less calories penetrated and take away the liquid-state silicon of region, this regional temperature range of decrease reduces, liquid-state silicon constitutional supercooling degree reduces, and effectively can reduce carrier gas and blow and penetrate impurity forming core in the liquid-state silicon of region and impurity nucleus growth.
For convenience of description, technical name corresponding in the guiding device below to rear three embodiments carries out unitized process.Described air inlet port 213,33, inlet pipe portion 42 will be commonly referred to as inlet mouth; One or two branch chamber, branch chamber 35, branch chamber portion 41 will be commonly referred to as branch chamber; Water conservancy diversion air flue 36,222, deflecting gas tube 43 will be commonly referred to as flow-guiding channel.
The principle of work of polycrystalline ingot furnace of the present invention is: first quartz crucible 18 is placed on graphite base plate 181, silicon material is filled in quartz crucible 18, again 4 pieces of graphite protective plate 182 are erectly placed on respectively the avris of graphite base plate 181, and the sidewall of graphite protective plate 182 and crucible 18 is fitted, with bolt, two adjacent graphite protective plate 182 are fixed successively again, finally again cover plate 183 is covered on the top end face of graphite protective plate 182.Open the lower furnace body of polycrystalline cast ingot, dragged graphite base plate 181 with the yoke of fork truck, being moved in stove and to be placed on heat exchange platform 16, close lower furnace body, starts long brilliant technique automatically and carry out ingot casting.Pneumatic tube 50 is transported to heating unit cold carrier gas and heats, the hot carrier gas that formation temperature is higher, this hot carrier gas flows into the branch chamber of guiding device through connecting pipeline, and rotate in branch chamber, then flow in many equally distributed flow-guiding channels respectively from the lower end of branch chamber, again from the exit outgoing of flow-guiding channel, the carrier gas stream of outgoing blows the different zones on the surface penetrating liquid-state silicon respectively dispersedly.Many flow-guiding channels of guiding device distribute around the medullary ray of guiding device, the outlet of flow-guiding channel is uniformly distributed along identical angle around the medullary ray of guiding device, the outgoing carrier gas stream of flow-guiding channel blows the different zones of penetrating liquid-state silicon surface respectively dispersedly, this blows penetrates region and is uniformly distributed round the center of liquid-state silicon, outgoing carrier gas stream to blow the liquid-state silicon of penetrating region and produce and drive the carrier gas stress of laminar flow, carrier gas stress is around the central distribution of liquid-state silicon, carrier gas stress drive top layer liquid-state silicon flowing, the rotational flow field making circumferential flow is formed in liquid-state silicon.Suitably reduce the angle between outgoing carrier gas stream and liquid-state silicon surface, preferably 30-40 degree, outgoing carrier gas stream blows the surface penetrating liquid-state silicon obliquely, and outgoing carrier gas stream liquid towards silicon produces the carrier gas stress of larger driving laminar flow, produces stronger rotational flow field in liquid-state silicon.Rotational flow field is conducive to, the edge of the Impurity Transport of liquid-state silicon surface flotation to liquid-state silicon, reducing the impact of floating impurity on crystal yield, improves the yield rate of crystal; Meanwhile, be conducive to the surface of the Impurity Transport of liquid-state silicon inside to liquid-state silicon, accelerate the volatilization of impurity in liquid-state silicon; Liquid-state silicon is under the acting in conjunction of thermal natural convection flow field and rotational flow field, be conducive to assorted the transporting and be uniformly distributed of matter in liquid-state silicon, avoid the enrichment of impurity local, make the radial resistivity distribution of crystal evenly, the electrical property of crystal is optimized, and the quality of crystal is further enhanced.
Compared to the prior art, the present invention has following technical progress.
1) reduce that even to eliminate in liquid-state silicon the local caused by carrier gas excessively cold, by arranging the heating unit of carrier gas, cold carrier gas first forms hot carrier gas through heating devices heat, hotter carrier gas is blown and penetrate liquid-state silicon.When temperature lower than liquid-state silicon of the temperature of hot carrier gas, carrier gas from blow and penetrate the heat taken away the liquid-state silicon in region and greatly reduce, the temperature drop of this region liquid-state silicon significantly reduces, condensate depression reduces, the forming core probability of the impurity that in liquid-state silicon, carrier gas causes reduces, and reduces and even eliminates being formed of the impurity promoted by carrier gas in liquid-state silicon; When temperature higher than liquid-state silicon of the temperature of hot carrier gas, carrier gas to blow the liquid-state silicon supplying heat penetrating region, the temperature of this region liquid-state silicon is raised, reduce temperature head radial in liquid-state silicon, suppress the impurity forming core in this region liquid-state silicon, eliminate the formation of the impurity that carrier gas promotes, improve the quality of crystal.
2) in the viewing window of furnace roof, there is the visual field led in ingot furnace, outside by a portion/guide shell portion that connects (branch chamber portion) the air inlet platform portion (inlet pipe portion) of guiding device being arranged on guiding device, the visual field leading to ingot furnace inside in guiding device is not blocked; The situation in ingot furnace can be watched by the viewing window of furnace roof, facilitate stoker to operate; Surveying crystal bar can be inserted in ingot furnace through guiding device, and the speed of growth of crystal is convenient for measuring; Infrared detecting group is by the state of silicon material in the detectable ingot furnace of viewing window, and long brilliant technique is carried out smoothly automatically.
3) the local temperature drop that in liquid-state silicon, carrier gas causes is reduced further, multiple flow-guiding channels of guiding device make carrier gas be divided into multi beam carrier gas stream, the different zones of penetrating liquid-state silicon surface is blown in the dispersion of multi beam carrier gas stream obliquely, effectively increase the contact area on carrier gas and liquid-state silicon surface, the heat that carrier gas stream is taken away this unit surface reduces, the local temperature drop that carrier gas stream causes reduces, thus minimizing even avoids the local temperature drop caused by carrier gas in liquid-state silicon.
4) promote that impurity volatilization and impurity are uniformly distributed, improve the quality of crystal, multiple flow-guiding channels of guiding device are uniformly distributed around the medullary ray of guiding device, carrier gas is divided into multi beam carrier gas stream through flow-guiding channel, carrier gas stream blows the different zones of penetrating liquid-state silicon surface respectively obliquely, carrier gas stream blow and penetrate the central distribution of region around liquid-state silicon surface, carrier gas stream liquid towards silicon produces the carrier gas stress driving laminar flow, carrier gas stress drive liquid-state silicon flowing, forms the rotational flow field around its center flow.Rotational flow field to be conducive to the Impurity Transport of liquid-state silicon surface flotation, to liquid-state silicon edge, reducing the impact of floating impurity on crystal yield, improves the yield rate of crystal; Also help the surface of the Impurity Transport of liquid-state silicon inside to liquid-state silicon, accelerate the volatilization of impurity in liquid-state silicon; Liquid-state silicon, under the acting in conjunction of natural convection flow field and rotational flow field, is conducive to assorted the transporting and be uniformly distributed of matter in liquid-state silicon, avoids the enrichment of impurity local, make the radial resistivity distribution of crystal evenly, the quality of crystal is further enhanced.
More than show and describe ultimate principle of the present invention, principal character and advantage of the present invention.The technician of the industry should understand; the present invention is not restricted to the described embodiments; what describe in above-described embodiment and specification sheets just illustrates principle of the present invention; without departing from the spirit and scope of the present invention; the present invention also has various changes and modifications, and application claims protection domain is defined by appending claims, specification sheets and equivalent thereof.
Claims (9)
1. the polycrystalline ingot furnace with carrier gas heating unit, comprise and being assemblied in ingot furnace for the drainage system to delivery of carrier gas in stove, it is characterized in that: also comprise the heating unit for heating carrier gas, the output terminal of described heating unit is connected with the input terminus of drainage system, and input terminus is used for being communicated with the pneumatic tube of carrier gas.
2. a kind of polycrystalline ingot furnace with carrier gas heating unit according to claim 1, it is characterized in that: described heating unit is airheater, in the housing of airheater, thermofin is set, the output terminal of airheater and the input terminus of drainage system are by connecting pipeline communication, and input terminus is communicated with the pneumatic tube of carrier gas; The described coated thermofin in outside connecting pipeline.
3. a kind of polycrystalline ingot furnace with carrier gas heating unit according to claim 1, it is characterized in that: described heating unit is heating tube, described heating tube is arranged in the heat-insulation cage of ingot furnace, the output terminal of heating tube and the input terminus of drainage system are by connecting pipeline communication, and input terminus is communicated with the pneumatic tube of carrier gas.
4. with a polycrystalline ingot furnace for carrier gas heating unit, comprise heat-insulation cage and guiding device, described heat-insulation cage is the cavity formed primarily of side thermal baffle, top thermal baffle and end thermal baffle, it is characterized in that: also comprise the heating unit for heating carrier gas; Described guiding device is at least by connecting cylinder and guide shell is formed, described connect cylinder comprise be fixedly connected with connect a portion and air inlet platform portion, connecting a portion is the cylinder arranging through hole along its centerline direction, air inlet platform portion is arranged on the outside connecting a portion, the air inlet port being used for carrier gas and flowing into is set in air inlet platform portion, the first branch chamber with its concentrically lower ending opening in the form of a ring of line is set in the barrel connecting a portion, by being communicated with air flue connection between described air inlet port with the first branch chamber; Described guide shell is the cylinder arranging through hole along its centerline direction, and arrange the second branch chamber with its concentrically upper surface opening in the form of a ring of line in the barrel of guide shell upper end, the second branch chamber is corresponding with the first branch chamber; Arrange at least one water conservancy diversion air flue from the second branch chamber lower surface along from the cylindrical helix of non-uniform pitch to downward-extension in the barrel of described guide shell, the outlet of water conservancy diversion air flue is positioned at the lower end of guide shell; The upper end of described guide shell, through the through hole in the middle part of the thermal baffle of top, is connected with the axial restraint that connects be arranged on above the thermal baffle of top; The output terminal of described heating unit and the air inlet port of guiding device are by connecting pipeline communication, and input terminus is communicated with the transfer lime of carrier gas.
5. a kind of polycrystalline ingot furnace with carrier gas heating unit according to claim 4, is characterized in that: an end of described connection air flue is communicated with air inlet port is tangent, and the other end is communicated with the side of the first branch chamber is tangent.
6. the polycrystalline ingot furnace with carrier gas heating unit, comprise heat-insulation cage and thrust-augmenting nozzle, the cavity of described heat-insulation cage for forming primarily of side thermal baffle, top thermal baffle and end thermal baffle, it is characterized in that: also comprise guiding device and the heating unit for heating carrier gas, described guiding device comprises the guide shell portion and air inlet platform portion that are fixedly connected with, guide shell portion is the cylinder arranging through hole along its centerline direction, and air inlet platform portion is arranged on the outside in guide shell portion; Branch chamber in the form of a ring with its concentrically line is set in the barrel of upper end, described guide shell portion; The built-in air inlet port flowed into for carrier gas in air inlet platform portion, is communicated with by being communicated with air flue between air inlet port with branch chamber; Arrange at least one in the barrel in described guide shell portion from the lower surface of branch chamber along the cylindrical helix of non-uniform pitch to the water conservancy diversion air flue of downward-extension, the outlet of water conservancy diversion air flue is positioned at the lower end in guide shell portion; Described thrust-augmenting nozzle is assemblied on the thermal baffle of top, and its lower end through the through hole in the middle part of the thermal baffle of top, and is stretched out from the lower surface of top thermal baffle; Described guiding device is connected with thrust-augmenting nozzle bottom axial restraint; The output terminal of described heating unit and the air inlet port of guiding device are by connecting pipeline communication, and input terminus is communicated with the transfer lime of carrier gas.
7. a kind of polycrystalline ingot furnace with carrier gas heating unit according to claim 6, is characterized in that: an end of described connection air flue is communicated with air inlet port is tangent, and the other end is communicated with the side of branch chamber is tangent.
8. the polycrystalline ingot furnace with carrier gas heating unit, comprise heat-insulation cage and thrust-augmenting nozzle, the cavity of described heat-insulation cage for forming primarily of side thermal baffle, top thermal baffle and end thermal baffle, it is characterized in that: also comprise guiding device and the heating unit for heating carrier gas, described guiding device comprises branch chamber portion, inlet pipe portion and at least one deflecting gas tube; The airtight cavity in the form of a ring that described branch chamber portion is formed primarily of inner side-wall, outer side wall, upper end wall and lower end wall; Inlet pipe portion is arranged on the outside of the outer side wall in branch chamber portion, and the one end in inlet pipe portion is fixed with the outer side wall in branch chamber portion and is communicated with; Described deflecting gas tube is distributed in the below in branch chamber portion along the cylindrical helix of non-uniform pitch, and the upper end of deflecting gas tube is communicated with the lower end wall in branch chamber portion and fixes, and the bottom of deflecting gas tube is outlet; Described thrust-augmenting nozzle is assemblied on the thermal baffle of top, and its lower end through the through hole in the middle part of the thermal baffle of top, and is stretched out from the lower surface of top thermal baffle; Described guiding device is connected with thrust-augmenting nozzle bottom axial restraint; The output terminal of described heating unit and the inlet pipe portion of guiding device are by connecting pipeline communication, and input terminus is communicated with the transfer lime of carrier gas.
9. a kind of polycrystalline ingot furnace with carrier gas heating unit according to claim 8, it is characterized in that: described inlet pipe portion is communicated with by communicating pipe with between branch chamber portion, one end of described communicating pipe is communicated with inlet pipe portion is tangent and fixes, and the other end is communicated with the sidewall in branch chamber portion is tangent and fixes.
Priority Applications (4)
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| CN201710893617.4A CN107815731B (en) | 2016-02-03 | 2016-02-03 | Polycrystal ingot furnace with gas-carrying heating device |
| CN201710893533.0A CN107513765B (en) | 2016-02-03 | 2016-02-03 | Polycrystal ingot furnace with gas-carrying heating device |
| CN201710893534.5A CN107699945A (en) | 2016-02-03 | 2016-02-03 | A kind of polycrystalline ingot furnace with carrier gas heater and guiding device |
| CN201610082945.1A CN105543954B (en) | 2016-02-03 | 2016-02-03 | A kind of polycrystalline ingot furnace with carrier gas heater |
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| CN201710893617.4A Division CN107815731B (en) | 2016-02-03 | 2016-02-03 | Polycrystal ingot furnace with gas-carrying heating device |
| CN201710893533.0A Division CN107513765B (en) | 2016-02-03 | 2016-02-03 | Polycrystal ingot furnace with gas-carrying heating device |
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| CN201710893533.0A Active CN107513765B (en) | 2016-02-03 | 2016-02-03 | Polycrystal ingot furnace with gas-carrying heating device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110170637A (en) * | 2019-05-28 | 2019-08-27 | 深圳市万泽中南研究院有限公司 | A kind of equipment and technology keeping casting directional solidification process stability |
| CN115142129A (en) * | 2022-07-04 | 2022-10-04 | 扬州晶樱光电科技有限公司 | Gas-liquid matched cooling device and method for polycrystalline ingot furnace |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111041554B (en) * | 2020-01-16 | 2021-05-25 | 江苏大学 | Carrier gas flow guiding device for crystal silicon ingot furnace and flow guiding method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000158096A (en) * | 1998-11-27 | 2000-06-13 | Mitsubishi Materials Corp | Casting apparatus |
| WO2003006693A1 (en) * | 2001-07-10 | 2003-01-23 | Technological Resources Pty Ltd | A gas injection lance |
| WO2012143385A1 (en) * | 2011-04-19 | 2012-10-26 | Rec Wafer Pte. Ltd. | An arrangement for manufacturing crystalline silicon ingots |
| CN202671714U (en) * | 2012-08-02 | 2013-01-16 | 天威新能源控股有限公司 | Cover plate improved structure for preparing low-carbon low-oxygen silicon ingots |
| CN103014853A (en) * | 2013-01-11 | 2013-04-03 | 天津英利新能源有限公司 | Polysilicon ingot casting device and ingot casting method |
| CN103556220A (en) * | 2013-11-14 | 2014-02-05 | 乐山新天源太阳能科技有限公司 | Polycrystalline silicon ingot furnace |
| CN103896270A (en) * | 2012-12-31 | 2014-07-02 | 江苏双良新能源装备有限公司 | High temperature tail gas anti-impact piece adjustable structure of polycrystalline silicon high temperature tail gas heat exchanger |
| CN104131344A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | High-impurity molten silicon high-pressure gas-blow separation device and method |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101196718B1 (en) * | 2010-12-31 | 2012-11-07 | 주식회사수성기술 | Gas injection nozzle for polycrystline silicon ingot producing apparatus |
| CN204211856U (en) * | 2014-11-14 | 2015-03-18 | 英利能源（中国）有限公司 | A kind of polycrystalline ingot furnace with heat-exchange system |
| CN105112997B (en) * | 2015-09-23 | 2018-01-19 | 晶科能源有限公司 | A kind of ingot furnace airflow guiding device |
-
2016
- 2016-02-03 CN CN201610082945.1A patent/CN105543954B/en active Active
- 2016-02-03 CN CN201710893617.4A patent/CN107815731B/en active Active
- 2016-02-03 CN CN201710893533.0A patent/CN107513765B/en active Active
- 2016-02-03 CN CN201710893534.5A patent/CN107699945A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000158096A (en) * | 1998-11-27 | 2000-06-13 | Mitsubishi Materials Corp | Casting apparatus |
| WO2003006693A1 (en) * | 2001-07-10 | 2003-01-23 | Technological Resources Pty Ltd | A gas injection lance |
| WO2012143385A1 (en) * | 2011-04-19 | 2012-10-26 | Rec Wafer Pte. Ltd. | An arrangement for manufacturing crystalline silicon ingots |
| CN202671714U (en) * | 2012-08-02 | 2013-01-16 | 天威新能源控股有限公司 | Cover plate improved structure for preparing low-carbon low-oxygen silicon ingots |
| CN103896270A (en) * | 2012-12-31 | 2014-07-02 | 江苏双良新能源装备有限公司 | High temperature tail gas anti-impact piece adjustable structure of polycrystalline silicon high temperature tail gas heat exchanger |
| CN103014853A (en) * | 2013-01-11 | 2013-04-03 | 天津英利新能源有限公司 | Polysilicon ingot casting device and ingot casting method |
| CN103556220A (en) * | 2013-11-14 | 2014-02-05 | 乐山新天源太阳能科技有限公司 | Polycrystalline silicon ingot furnace |
| CN104131344A (en) * | 2014-07-17 | 2014-11-05 | 大连理工大学 | High-impurity molten silicon high-pressure gas-blow separation device and method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110170637A (en) * | 2019-05-28 | 2019-08-27 | 深圳市万泽中南研究院有限公司 | A kind of equipment and technology keeping casting directional solidification process stability |
| CN110170637B (en) * | 2019-05-28 | 2021-05-25 | 深圳市万泽中南研究院有限公司 | Equipment and process for maintaining stability of casting in directional solidification process |
| CN115142129A (en) * | 2022-07-04 | 2022-10-04 | 扬州晶樱光电科技有限公司 | Gas-liquid matched cooling device and method for polycrystalline ingot furnace |
| CN115142129B (en) * | 2022-07-04 | 2023-09-26 | 扬州晶樱光电科技有限公司 | Gas-liquid cooperation cooling device and method for polycrystalline ingot furnace |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107815731A (en) | 2018-03-20 |
| CN107699945A (en) | 2018-02-16 |
| CN107513765A (en) | 2017-12-26 |
| CN105543954B (en) | 2017-12-08 |
| CN107815731B (en) | 2021-08-13 |
| CN107513765B (en) | 2020-06-19 |
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