CN107516484B - Amoled外部电学补偿侦测方法 - Google Patents

Amoled外部电学补偿侦测方法 Download PDF

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CN107516484B
CN107516484B CN201710973491.1A CN201710973491A CN107516484B CN 107516484 B CN107516484 B CN 107516484B CN 201710973491 A CN201710973491 A CN 201710973491A CN 107516484 B CN107516484 B CN 107516484B
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解红军
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Abstract

本发明提供一种AMOLED外部电学补偿侦测方法,在显示模式下,先估算出侦测薄膜晶体管的漏极与源极之间的跨压,再将所述侦测薄膜晶体管的漏极与源极之间的跨压的估算值用于计算驱动薄膜晶体管的栅源极电压,能够提高驱动薄膜晶体管栅源极电压的写入精确度;在侦测模式下,先估算出侦测薄膜晶体管的漏极与源极之间的跨压,再将所述侦测薄膜晶体管的漏极与源极之间的跨压的估算值用于计算驱动薄膜晶体管的源极的电压,然后将计算得到的驱动薄膜晶体管的源极的电压用于计算驱动薄膜晶体管的阈值电压与载流子迁移率,能够减小驱动薄膜晶体管的阈值电压与载流子迁移率的计算误差,改善AMOLED外部电学补偿侦测的精确度。

Description

AMOLED外部电学补偿侦测方法
技术领域
本发明涉及显示技术领域,尤其涉及一种AMOLED外部电学补偿侦测方法。
背景技术
有机发光二极管(Organic Light Emitting Display,OLED)显示器具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽,可实现柔性显示与大面积全彩显示等诸多优点,被业界公认为是最有发展潜力的显示器。
OLED显示器按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED,PMOLED)和有源矩阵型OLED(Active Matrix OLED,AMOLED)两大类,即直接寻址和薄膜晶体管(Thin Film Transistor,TFT)矩阵寻址两类。其中,AMOLED显示器具有呈阵列式排布的像素,属于主动显示类型,发光效能高,通常用于高清晰度的大尺寸显示装置。
由于AMOLED显示器为电流驱动型显示装置,驱动TFT的均匀性和稳定性会影响显示效果,具体表现在AMOLED各个像素间的显示亮度不均匀,需要采取补偿措施。目前,业内对AMOLED的补偿技术包括像素内的内部补偿与像素外的外部补偿,其中,外部补偿又分为外部光学补偿与外部电学补偿。在大尺寸AMOLED显示领域,外部电学补偿技术有为重要,其原理是将AMOLED像素内TFT的不均匀特性通过电学侦测方法获得,再将偏差值补偿在像素驱动电压上,因此电学侦测的准确性会直接影响外部电学补偿的效果。
请同时参阅图1与图2,在现有的3T1C结构的外部补偿像素电路中,第一薄膜晶体管T10为驱动薄膜晶体管,用于直接驱动有机发光二极管D10;第二薄膜晶体管T20为开关薄膜晶体管,用于控制图像数据电压Data的写入;第三薄膜晶体管T30为侦测薄膜晶体管,用于在显示模式下向其自身源极写入一恒定电压Vcm及在侦测模式侦测第一薄膜晶体管T10的源极s的电压。
请参阅图1,现有的外部电学补偿侦测方案忽略了显示模式下第三薄膜晶体管T30的栅极与源极之间的跨压,认为第一薄膜晶体管T10的源极s的电压Vs等于所述恒定电压Vcm,但由于第三薄膜晶体管T30的漏极与源极之间的跨压Vds实际不为0,造成第一薄膜晶体管T10的栅极g与源极s之间的电压Vgs不等于预期值,只不过该偏差未被重视。
请同时参阅图1与图2,侦测模式分为电位重置阶段与充电阶段。电位重置阶段仍保持图1所示的状态;而进入充电阶段后,第二薄膜晶体管T20关闭,第一薄膜晶体管T10流过电流ID,且电流ID流经第三薄膜晶体管T30,在这个阶段根据侦测到的第一薄膜晶体管T10的源极s的电压,便能够计算出第一薄膜晶体管T10的阈值电压和载流子迁移率。现有的外部电学补偿侦测方案同样忽略了侦测模式下第三薄膜晶体管T30的漏极与源极之间的跨压,认为在第三薄膜晶体管T30的源极所侦测到的电压Vsense即等于第一薄膜晶体管T10的源极s的电压,严格来讲这种忽略必然会带来误差,造成第一薄膜晶体管T10的阈值电压和载流子迁移率的计算值也存在误差。
发明内容
本发明的目的在于提供一种AMOLED外部电学补偿侦测方法,能够改善AMOLED外部电学补偿侦测的精确度,提高在显示模式下驱动薄膜晶体管栅源极电压的写入精确度及在侦测模式下减小驱动薄膜晶体管的阈值电压与载流子迁移率的计算误差。
为实现上述目的,本发明提供一种AMOLED外部电学补偿侦测方法,包括如下步骤:
步骤S1、提供AMOLED显示器;
所述AMOLED显示器内具有呈阵列式排布的外部补偿像素电路,所述外部补偿像素电路包括驱动薄膜晶体管、开关薄膜晶体管、侦测薄膜晶体管、有机发光二级管及电容;
所述开关薄膜晶体管的栅极接入扫描信号,漏极接入数据信号,源极电性连接驱动薄膜晶体管的栅极;所述驱动薄膜晶体管的漏极接入电源正电压,源极电性连接侦测薄膜晶体管的漏极;所述侦测薄膜晶体管的栅极接入控制信号,源极电性连接侦测走线;所述有机发光二级管的阳极电性连接驱动薄膜晶体管的源极,阴极接入电源负电压;所述电容的一端电性连接驱动薄膜晶体管的栅极,另一端电性连接驱动薄膜晶体管的源极;
步骤S2、进入显示模式,先估算出侦测薄膜晶体管的漏极与源极之间的跨压,再将所述侦测薄膜晶体管的漏极与源极之间的跨压的估算值用于计算驱动薄膜晶体管的栅源极电压;
步骤S3、进入侦测模式,先估算出侦测薄膜晶体管的漏极与源极之间的跨压,再将所述侦测薄膜晶体管的漏极与源极之间的跨压的估算值用于计算驱动薄膜晶体管的源极的电压。
所述AMOLED外部电学补偿侦测方法还包括步骤S4,将所述步骤S3计算得到的驱动薄膜晶体管的源极的电压用于计算驱动薄膜晶体管的阈值电压与载流子迁移率。
在所述步骤S2中,所述扫描信号控制开关薄膜晶体管打开,控制信号控制侦测薄膜晶体管打开,所述侦测走线接入一恒定电压,所述数据信号的电压写入驱动薄膜晶体管的栅极,所述侦测薄膜晶体管在其线性区工作。
在所述步骤S2中,所述侦测薄膜晶体管的漏极与源极之间的跨压的估算公式为:
Vds3表示所述侦测薄膜晶体管的漏极与源极之间的跨压;
a=VData-Vcm-Vth1
其中,VData表示数据信号的电压,Vcm表示所述恒定电压,Vth1表示驱动薄膜晶体管的阈值电压的设计值;
其中,L1表示驱动薄膜晶体管的沟道长度,W1表示驱动薄膜晶体管的沟道宽度,L3表示侦测薄膜晶体管的沟道长度,W3表示侦测薄膜晶体管的沟道宽度,VGH表示驱动薄膜晶体管打开瞬间其栅极的电压,Vth3表示侦测薄膜晶体管的阈值电压的设计值。
在所述步骤S2中,所述驱动薄膜晶体管的栅源极电压的计算公式为:
Vgs=VData-Vcm-Vds3
其中,Vgs表示驱动薄膜晶体管的栅源极电压。
在所述步骤S3中,所述侦测模式分为电位重置阶段与充电阶段;在所述电位重置阶段,所述扫描信号控制开关薄膜晶体管打开,控制信号控制侦测薄膜晶体管打开,所述侦测走线接入一恒定电压,所述数据信号的电压写入驱动薄膜晶体管的栅极;在所述充电阶段,所述扫描信号控制开关薄膜晶体管关闭,控制信号仍控制侦测薄膜晶体管打开,所述侦测走线悬空并侦测所述侦测薄膜晶体管的源极的电压。
在所述步骤S3的充电阶段,所述侦测薄膜晶体管的漏极与源极之间的跨压的估算公式为:
Vds3表示所述侦测薄膜晶体管的漏极与源极之间的跨压;
a=VData-Vcm-Vth1
其中,VData表示数据信号的电压,Vcm表示所述恒定电压,Vth1表示驱动薄膜晶体管的阈值电压的设计值;
其中,L1表示驱动薄膜晶体管的沟道长度,W1表示驱动薄膜晶体管的沟道宽度,L3表示侦测薄膜晶体管的沟道长度,W3表示侦测薄膜晶体管的沟道宽度,VGH表示驱动薄膜晶体管打开瞬间其栅极的电压,Vsense表示所述侦测走线侦测到的所述侦测薄膜晶体管的源极的电压,Vth3表示侦测薄膜晶体管的阈值电压的设计值。
在所述步骤S3的充电阶段,所述驱动薄膜晶体管的源极的电压的计算公式为:
Vs=Vsense+Vds3
其中,Vs表示所述驱动薄膜晶体管的源极的电压。
本发明的有益效果:本发明提供的一种AMOLED外部电学补偿侦测方法,在显示模式下,先估算出侦测薄膜晶体管的漏极与源极之间的跨压,再将所述侦测薄膜晶体管的漏极与源极之间的跨压的估算值用于计算驱动薄膜晶体管的栅源极电压,相比现有的忽略侦测薄膜晶体管的漏极与源极之间的跨压的侦测技术方案,能够提高驱动薄膜晶体管栅源极电压的写入精确度;在侦测模式下,先估算出侦测薄膜晶体管的漏极与源极之间的跨压,再将所述侦测薄膜晶体管的漏极与源极之间的跨压的估算值用于计算驱动薄膜晶体管的源极的电压,然后将计算得到的驱动薄膜晶体管的源极的电压用于计算驱动薄膜晶体管的阈值电压与载流子迁移率,相比现有的忽略侦测薄膜晶体管的漏极与源极之间的跨压的侦测技术方案,能够减小驱动薄膜晶体管的阈值电压与载流子迁移率的计算误差,改善AMOLED外部电学补偿侦测的精确度。
附图说明
为了能更进一步了解本发明的特征以及技术内容,请参阅以下有关本发明的详细说明与附图,然而附图仅提供参考与说明用,并非用来对本发明加以限制。
附图中,
图1为现有的3T1C结构的外部补偿像素电路在显示模式及侦测模式的电位重置阶段的状态示意图;
图2为现有的3T1C结构的外部补偿像素电路在侦测模式的充电阶段的状态示意图;
图3为本发明的AMOLED外部电学补偿侦测方法的流程图;
图4为本发明的AMOLED外部电学补偿侦测方法中外部补偿像素电路在显示模式及侦测模式的电位重置阶段的状态示意图;
图5为本发明的AMOLED外部电学补偿侦测方法中外部补偿像素电路在侦测模式的充电阶段的状态示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果,以下结合本发明的优选实施例及其附图进行详细描述。
请同时参阅图3、图4、与图5,本发明提供一种AMOLED外部电学补偿侦测方法,包括如下步骤:
步骤S1、提供AMOLED显示器。
如图4与图5所示,所述AMOLED显示器内具有呈阵列式排布的外部补偿像素电路,所述外部补偿像素电路包括驱动薄膜晶体管T1、开关薄膜晶体管T2、侦测薄膜晶体管T3、有机发光二级管D及电容C。
具体地,所述开关薄膜晶体管T2的栅极接入扫描信号Gate,漏极接入数据信号Data,源极电性连接驱动薄膜晶体管T1的栅极g;所述驱动薄膜晶体管T1的漏极接入电源正电压VDD,源极s电性连接侦测薄膜晶体管T3的漏极;所述侦测薄膜晶体管T3的栅极接入控制信号P,源极电性连接侦测走线L;所述有机发光二级管D的阳极电性连接驱动薄膜晶体管T1的源极s,阴极接入电源负电压VSS;所述电容C的一端电性连接驱动薄膜晶体管T1的栅极g,另一端电性连接驱动薄膜晶体管T1的源极s。
步骤S2、如图4所示,进入显示模式,所述扫描信号Gate控制开关薄膜晶体管T2打开,所述数据信号Data的电压写入驱动薄膜晶体管T1的栅极g;所述侦测走线L接入一恒定电压Vcm并将所述恒定电压Vcm送入所述侦测薄膜晶体管T3的源极。
所述侦测薄膜晶体管T3在其线性区工作(薄膜晶体管的工作状态分为线性区和饱和区,当薄膜晶体管的漏极与源极之间的跨压小于其栅源极电压与阈值电压的差值时即为线性区,处于线性区的薄膜晶体管相当于电阻),将侦测薄膜晶体管T3的漏极与源极之间等效为一个电阻,电流ID流过驱动薄膜晶体管T1与侦测薄膜晶体管T3,电流方向如图4中的虚线箭头所示。
在显示模式下,先估算出侦测薄膜晶体管T3的漏极与源极之间的跨压Vds3
其中:
a=VData-Vcm-Vth1
进一步地,VData表示数据信号Data的电压,Vcm表示所述恒定电压(约1V左右),Vth1表示驱动薄膜晶体管T1的阈值电压,由于驱动薄膜晶体管T1的阈值电压Vth1在像素间的差异对估算影响很小,该处取阈值电压Vth1的设计值即可;
进一步地,L1表示驱动薄膜晶体管T1的沟道长度,W1表示驱动薄膜晶体管T1的沟道宽度,L3表示侦测薄膜晶体管T3的沟道长度,W3表示侦测薄膜晶体管T3的沟道宽度,VGH表示驱动薄膜晶体管T1打开瞬间其栅极g的电压(约22V左右),Vth3表示侦测薄膜晶体管T3的阈值电压,由于侦测薄膜晶体管T3的阈值电压Vth3在像素间的差异对估算影响很小,该处取阈值电压Vth3的设计值即可;
然后再将所述侦测薄膜晶体管T3的漏极与源极之间的跨压Vds3的估算值用于计算驱动薄膜晶体管T1的栅源极电压Vgs
Vgs=VData-Vcm-Vds3
相比现有的忽略侦测薄膜晶体管的漏极与源极之间的跨压的侦测技术方案,该步骤S2估算出了所述侦测薄膜晶体管T3的漏极与源极之间的跨压Vds3并将相应的估算值用于计算驱动薄膜晶体管T1的栅源极电压Vgs,能够提高驱动薄膜晶体管T1的栅源极电压Vgs的写入精确度。
步骤S3、进入侦测模式。所述侦测模式分为如图4所示的电位重置阶段与如图5所示的充电阶段。在所述电位重置阶段,所述扫描信号Gate控制开关薄膜晶体管T2打开,控制信号P控制侦测薄膜晶体管T3打开,所述侦测走线L接入一恒定电压Vcm,所述数据信号Data的电压写入驱动薄膜晶体管T1的栅极g。而在所述充电阶段,所述扫描信号Gate控制开关薄膜晶体管T2关闭;控制信号P仍控制侦测薄膜晶体管T3打开,所述侦测薄膜晶体管T3在其线性区工作,将侦测薄膜晶体管T3的漏极与源极之间等效为一个电阻,电流ID流过驱动薄膜晶体管T1与侦测薄膜晶体管T3,电流方向如图5中的虚线箭头所示;所述侦测走线L悬空(即断开所述恒定电压Vcm)并侦测所述侦测薄膜晶体管T3的源极的电压Vsense
由于在所述充电阶段,电流ID恒定,且侦测薄膜晶体管T3处于线性区,侦测薄膜晶体管T3的漏极与源极之间的跨压Vds3恒定,直到侦测时该跨压Vds3依然存在,此种情况下可通过下式来估算侦测薄膜晶体管T3的漏极与源极之间的跨压Vds3
其中:
a=VData-Vcm-Vth1
进一步地,VData表示数据信号Data的电压,Vcm表示所述恒定电压(约1V左右),Vth1表示驱动薄膜晶体管T1的阈值电压,由于驱动薄膜晶体管T1的阈值电压Vth1在像素间的差异对估算影响很小,该处取阈值电压Vth1的设计值即可;
进一步地,L1表示驱动薄膜晶体管T1的沟道长度,W1表示驱动薄膜晶体管T1的沟道宽度,L3表示侦测薄膜晶体管T3的沟道长度,W3表示侦测薄膜晶体管T3的沟道宽度,VGH表示驱动薄膜晶体管T1打开瞬间其栅极g的电压(约22V左右),Vsense表示所述侦测走线L侦测到的所述侦测薄膜晶体管T3的源极的电压,Vth3表示侦测薄膜晶体管T3的阈值电压,由于侦测薄膜晶体管T3的阈值电压Vth3在像素间的差异对估算影响很小,该处取阈值电压Vth3的设计值即可;
计算得到所述侦测薄膜晶体管T3的漏极与源极之间的跨压Vds3后,再将相应的估算值用于计算所述驱动薄膜晶体管T1的源极s的电压Vs
Vs=Vsense+Vds3
以及步骤S4、将所述步骤S3计算得到的驱动薄膜晶体管T1的源极s的电压Vs用于计算驱动薄膜晶体管T1的阈值电压与载流子迁移率。
该步骤S4采用业界现有的计算驱动薄膜晶体管T1的阈值电压与载流子迁移率的算法即可,此处不进行展开叙述。
由于上述步骤S3将侦测薄膜晶体管T3的漏极与源极之间的跨压Vds3的估算值用于计算驱动薄膜晶体管T1的源极s的电压Vs,所以该步骤S4中计算驱动薄膜晶体管T1的阈值电压与载流子迁移率所用到的驱动薄膜晶体管T1的源极s的电压Vs考虑了侦测薄膜晶体管T3的漏极与源极之间的跨压Vds3,相比现有的忽略侦测薄膜晶体管T3的漏极与源极之间的跨压Vds3的侦测技术方案,能够减小驱动薄膜晶体管T1的阈值电压与载流子迁移率的计算误差。
综上所述,本发明的AMOLED外部电学补偿侦测方法,在显示模式下,先估算出侦测薄膜晶体管的漏极与源极之间的跨压,再将所述侦测薄膜晶体管的漏极与源极之间的跨压的估算值用于计算驱动薄膜晶体管的栅源极电压,相比现有的忽略侦测薄膜晶体管的漏极与源极之间的跨压的侦测技术方案,能够提高驱动薄膜晶体管栅源极电压的写入精确度;在侦测模式下,先估算出侦测薄膜晶体管的漏极与源极之间的跨压,再将所述侦测薄膜晶体管的漏极与源极之间的跨压的估算值用于计算驱动薄膜晶体管的源极的电压,然后将计算得到的驱动薄膜晶体管的源极的电压用于计算驱动薄膜晶体管的阈值电压与载流子迁移率,相比现有的忽略侦测薄膜晶体管的漏极与源极之间的跨压的侦测技术方案,能够减小驱动薄膜晶体管的阈值电压与载流子迁移率的计算误差,改善AMOLED外部电学补偿侦测的精确度。
以上所述,对于本领域的普通技术人员来说,可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形,而所有这些改变和变形都应属于本发明的权利要求的保护范围。

Claims (7)

1.一种AMOLED外部电学补偿侦测方法,其特征在于,包括如下步骤:
步骤S1、提供AMOLED显示器;
所述AMOLED显示器内具有呈阵列式排布的外部补偿像素电路,所述外部补偿像素电路包括驱动薄膜晶体管(T1)、开关薄膜晶体管(T2)、侦测薄膜晶体管(T3)、有机发光二级管(D)及电容(C);
所述开关薄膜晶体管(T2)的栅极接入扫描信号(Gate),漏极接入数据信号(Data),源极电性连接驱动薄膜晶体管(T1)的栅极(g);所述驱动薄膜晶体管(T1)的漏极接入电源正电压(VDD),源极(s)电性连接侦测薄膜晶体管(T3)的漏极;所述侦测薄膜晶体管(T3)的栅极接入控制信号(P),源极电性连接侦测走线(L);所述有机发光二级管(D)的阳极电性连接驱动薄膜晶体管(T1)的源极(s),阴极接入电源负电压(VSS);所述电容(C)的一端电性连接驱动薄膜晶体管(T1)的栅极(g),另一端电性连接驱动薄膜晶体管(T1)的源极(s);
步骤S2、进入显示模式,先估算出侦测薄膜晶体管(T3)的漏极与源极之间的跨压,再将所述侦测薄膜晶体管(T3)的漏极与源极之间的跨压的估算值用于计算驱动薄膜晶体管(T1)的栅源极电压;
步骤S3、进入侦测模式,先估算出侦测薄膜晶体管(T3)的漏极与源极之间的跨压,再将所述侦测薄膜晶体管(T3)的漏极与源极之间的跨压的估算值用于计算驱动薄膜晶体管(T1)的源极(s)的电压;
步骤S4,将所述步骤S3计算得到的驱动薄膜晶体管(T1)的源极(s)的电压用于计算驱动薄膜晶体管(T1)的阈值电压与载流子迁移率。
2.如权利要求1所述的AMOLED外部电学补偿侦测方法,其特征在于,在所述步骤S2中,所述扫描信号(Gate)控制开关薄膜晶体管(T2)打开,控制信号(P)控制侦测薄膜晶体管(T3)打开,所述侦测走线(L)接入一恒定电压(Vcm),所述数据信号(Data)的电压写入驱动薄膜晶体管(T1)的栅极(g),所述侦测薄膜晶体管(T3)在其线性区工作。
3.如权利要求2所述的AMOLED外部电学补偿侦测方法,其特征在于,在所述步骤S2中,所述侦测薄膜晶体管(T3)的漏极与源极之间的跨压的估算公式为:
Vds3表示所述侦测薄膜晶体管(T3)的漏极与源极之间的跨压;
a=VData-Vcm-Vth1
其中,VData表示数据信号(Data)的电压,Vcm表示所述恒定电压,Vth1表示驱动薄膜晶体管(T1)的阈值电压的设计值;
其中,L1表示驱动薄膜晶体管(T1)的沟道长度,W1表示驱动薄膜晶体管(T1)的沟道宽度,L3表示侦测薄膜晶体管(T3)的沟道长度,W3表示侦测薄膜晶体管(T3)的沟道宽度,VGH表示驱动薄膜晶体管(T1)打开瞬间其栅极(g)的电压,Vth3表示侦测薄膜晶体管(T3)的阈值电压的设计值。
4.如权利要求3所述的AMOLED外部电学补偿侦测方法,其特征在于,在所述步骤S2中,所述驱动薄膜晶体管(T1)的栅源极电压的计算公式为:
Vgs=VData-Vcm-Vds3
其中,Vgs表示驱动薄膜晶体管(T1)的栅源极电压。
5.如权利要求1所述的AMOLED外部电学补偿侦测方法,其特征在于,在所述步骤S3中,所述侦测模式分为电位重置阶段与充电阶段;在所述电位重置阶段,所述扫描信号(Gate)控制开关薄膜晶体管(T2)打开,控制信号(P)控制侦测薄膜晶体管(T3)打开,所述侦测走线(L)接入一恒定电压(Vcm),所述数据信号(Data)的电压写入驱动薄膜晶体管(T1)的栅极(g);在所述充电阶段,所述扫描信号(Gate)控制开关薄膜晶体管(T2)关闭,控制信号(P)仍控制侦测薄膜晶体管(T3)打开,所述侦测走线(L)悬空并侦测所述侦测薄膜晶体管(T3)的源极的电压(Vsense)。
6.如权利要求5所述的AMOLED外部电学补偿侦测方法,其特征在于,在所述步骤S3的充电阶段,所述侦测薄膜晶体管(T3)的漏极与源极之间的跨压的估算公式为:
Vds3表示所述侦测薄膜晶体管(T3)的漏极与源极之间的跨压;
a=VData-Vcm-Vth1
其中,VData表示数据信号(Data)的电压,Vcm表示所述恒定电压,Vth1表示驱动薄膜晶体管(T1)的阈值电压的设计值;
其中,L1表示驱动薄膜晶体管(T1)的沟道长度,W1表示驱动薄膜晶体管(T1)的沟道宽度,L3表示侦测薄膜晶体管(T3)的沟道长度,W3表示侦测薄膜晶体管(T3)的沟道宽度,VGH表示驱动薄膜晶体管(T1)打开瞬间其栅极(g)的电压,Vsense表示所述侦测走线(L)侦测到的所述侦测薄膜晶体管(T3)的源极的电压,Vth3表示侦测薄膜晶体管(T3)的阈值电压的设计值。
7.如权利要求6所述的AMOLED外部电学补偿侦测方法,其特征在于,在所述步骤S3的充电阶段,所述驱动薄膜晶体管(T1)的源极(s)的电压的计算公式为:
Vs=Vsense+Vds3
其中,Vs表示所述驱动薄膜晶体管(T1)的源极(s)的电压。
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