CN107488875B - 一种内置换热器的多晶铸锭炉 - Google Patents
一种内置换热器的多晶铸锭炉 Download PDFInfo
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- CN107488875B CN107488875B CN201710927088.5A CN201710927088A CN107488875B CN 107488875 B CN107488875 B CN 107488875B CN 201710927088 A CN201710927088 A CN 201710927088A CN 107488875 B CN107488875 B CN 107488875B
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- carrier gas
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- 239000012159 carrier gas Substances 0.000 claims abstract description 300
- 238000010438 heat treatment Methods 0.000 claims abstract description 123
- 238000009413 insulation Methods 0.000 claims abstract description 99
- 239000007789 gas Substances 0.000 claims abstract description 22
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 238000009826 distribution Methods 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 abstract description 222
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 217
- 229910052710 silicon Inorganic materials 0.000 abstract description 217
- 239000010703 silicon Substances 0.000 abstract description 217
- 239000012535 impurity Substances 0.000 abstract description 88
- 239000002210 silicon-based material Substances 0.000 abstract description 19
- 238000007664 blowing Methods 0.000 abstract description 18
- 230000006911 nucleation Effects 0.000 abstract description 16
- 238000010899 nucleation Methods 0.000 abstract description 16
- 238000004781 supercooling Methods 0.000 abstract description 13
- 239000013078 crystal Substances 0.000 description 58
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 34
- 229910002804 graphite Inorganic materials 0.000 description 34
- 239000010439 graphite Substances 0.000 description 34
- 230000009286 beneficial effect Effects 0.000 description 21
- 238000005265 energy consumption Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 238000007667 floating Methods 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000009827 uniform distribution Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000009471 action Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (8)
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CN201710927088.5A CN107488875B (zh) | 2016-02-03 | 2016-02-03 | 一种内置换热器的多晶铸锭炉 |
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CN201710927088.5A CN107488875B (zh) | 2016-02-03 | 2016-02-03 | 一种内置换热器的多晶铸锭炉 |
CN201610082941.3A CN105671632B (zh) | 2016-02-03 | 2016-02-03 | 一种内置换热器及载气加热装置的多晶铸锭炉 |
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CN201610082941.3A Division CN105671632B (zh) | 2016-02-03 | 2016-02-03 | 一种内置换热器及载气加热装置的多晶铸锭炉 |
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CN107488875A CN107488875A (zh) | 2017-12-19 |
CN107488875B true CN107488875B (zh) | 2020-05-19 |
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CN201710878293.7A Pending CN107419332A (zh) | 2016-02-03 | 2016-02-03 | 一种内置换热器、导流装置及载气加热装置的多晶铸锭炉 |
CN201710927088.5A Active CN107488875B (zh) | 2016-02-03 | 2016-02-03 | 一种内置换热器的多晶铸锭炉 |
CN201610082941.3A Active CN105671632B (zh) | 2016-02-03 | 2016-02-03 | 一种内置换热器及载气加热装置的多晶铸锭炉 |
CN201710893535.XA Pending CN107523863A (zh) | 2016-02-03 | 2016-02-03 | 一种内置载气加热装置的多晶铸锭炉 |
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CN201710893535.XA Pending CN107523863A (zh) | 2016-02-03 | 2016-02-03 | 一种内置载气加热装置的多晶铸锭炉 |
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CN113699581B (zh) * | 2021-04-14 | 2024-02-13 | 赛维Ldk太阳能高科技(新余)有限公司 | 铸锭单晶炉和铸锭单晶硅的制备方法 |
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JP4099884B2 (ja) * | 1998-11-27 | 2008-06-11 | 三菱マテリアル株式会社 | 鋳造装置 |
CN2646640Y (zh) * | 2003-08-19 | 2004-10-06 | 中冶长天国际工程有限责任公司 | 自预热煤气点火保温炉 |
GB2490130A (en) * | 2011-04-19 | 2012-10-24 | Rec Wafer Norway As | Directional solidification apparatus |
CN202074843U (zh) * | 2011-05-31 | 2011-12-14 | 西安华晶电子技术股份有限公司 | 单晶炉热量回收采暖系统 |
CN102311119A (zh) * | 2011-07-01 | 2012-01-11 | 中国恩菲工程技术有限公司 | 多晶硅还原炉及其喷嘴 |
US9574825B2 (en) * | 2011-09-14 | 2017-02-21 | Memc Singapore Pte. Ltd. | Directional solidification furnace having movable heat exchangers |
CN102899725A (zh) * | 2011-09-15 | 2013-01-30 | 吕铁铮 | 一种晶体生长炉的气体导流装置以及晶体生长方法 |
CN103896270A (zh) * | 2012-12-31 | 2014-07-02 | 江苏双良新能源装备有限公司 | 多晶硅高温尾气热交换器之高温尾气防冲件可调结构 |
CN203419746U (zh) * | 2013-07-31 | 2014-02-05 | 浙江精功新材料技术有限公司 | 一种用于制备多晶硅的装置 |
CN203613302U (zh) * | 2013-10-24 | 2014-05-28 | 江苏大学 | 一种多晶硅铸锭炉氩气导流系统 |
CN103556220B (zh) * | 2013-11-14 | 2016-06-08 | 乐山新天源太阳能科技有限公司 | 多晶硅铸锭炉 |
CN203792491U (zh) * | 2014-04-23 | 2014-08-27 | 黄冈市华窑中启窑炉科技有限公司 | 太阳能多晶硅石英坩埚连续式养护辊道窑 |
CN104131344B (zh) * | 2014-07-17 | 2016-08-24 | 大连理工大学 | 利用高压吹气分离高杂质熔硅的装置对多晶硅进行加热凝固除杂方法 |
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2016
- 2016-02-03 CN CN201710878293.7A patent/CN107419332A/zh active Pending
- 2016-02-03 CN CN201710927088.5A patent/CN107488875B/zh active Active
- 2016-02-03 CN CN201610082941.3A patent/CN105671632B/zh active Active
- 2016-02-03 CN CN201710893535.XA patent/CN107523863A/zh active Pending
Also Published As
Publication number | Publication date |
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CN105671632B (zh) | 2018-06-05 |
CN107419332A (zh) | 2017-12-01 |
CN105671632A (zh) | 2016-06-15 |
CN107523863A (zh) | 2017-12-29 |
CN107488875A (zh) | 2017-12-19 |
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Effective date of registration: 20191230 Address after: Ganquan road Shushan District of Hefei City, Anhui Province, 230000 West hillock road to the South Wild Garden commercial office building room B-1512 Applicant after: ANHUI YINGLONG INDUSTRIAL DESIGN Co.,Ltd. Address before: The new town of Fengtai County in Anhui province 232170 city of Huainan Chen Xiang Cun Hou Xiang Zi No. 112 Applicant before: Chen Ge |
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Effective date of registration: 20200424 Address after: 362000 Qiankeng 212, Ruidong Village, Tuzhai Town, Huian County, Quanzhou City, Fujian Province Applicant after: Li Weizhong Address before: Ganquan road Shushan District of Hefei City, Anhui Province, 230000 West hillock road to the South Wild Garden commercial office building room B-1512 Applicant before: ANHUI YINGLONG INDUSTRIAL DESIGN Co.,Ltd. |
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Effective date of registration: 20231201 Address after: 401420 Huangsha village, Yongcheng Town, Qijiang District, Chongqing Patentee after: CHONGQING DEANG CASTING Co.,Ltd. Address before: 362000 No.212 Qiankeng, Ruidong village, tuzhai Town, Hui'an County, Quanzhou City, Fujian Province Patentee before: Li Weizhong |