CN107482006B - Transistor device with integrated diode - Google Patents
Transistor device with integrated diode Download PDFInfo
- Publication number
- CN107482006B CN107482006B CN201710894561.4A CN201710894561A CN107482006B CN 107482006 B CN107482006 B CN 107482006B CN 201710894561 A CN201710894561 A CN 201710894561A CN 107482006 B CN107482006 B CN 107482006B
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- transistor
- grid
- area
- transistor device
- drain electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
Abstract
It includes diode region, transistor area and isolated area that the present invention, which provides a kind of transistor device with integrated diode, diode region has multiple anodes, transistor area has a grid, a drain electrode and multiple source electrodes, multiple source electrodes are arranged along the length direction for being parallel to drain electrode, drain electrode and source electrode are located at the two sides of grid, source electrode as transistor device after source electrode is electrically connected with anode；For isolated area between diode region and transistor area, diode region carries out electric isolation by isolated area with transistor area.When the grid voltage of transistor device of the invention is greater than threshold voltage, if applying forward voltage in drain electrode, transistor device is connected by transistor area；If applying negative voltage in drain electrode, then diode area is first connected, electric current, so the reverse turn-on voltages of transistor device are not restricted by transistor device threshold voltage, will not also be influenced by the gate turn-off of transistor area by the negative voltage for the grid for being applied to transistor device.
Description
Technical field
The present invention relates to field of semiconductor devices, specifically, being to be related to a kind of transistors with integrated diode
Part.
Background technique
In power switching system, it is often necessary to provide an afterflow channel for inductive load.It is with motor-drive circuit
Example, needs one freewheeling diode of reverse parallel connection on switching device.If switching device itself has reverse-conducting ability,
The reverse-conducting of switching device itself can be used to substitute freewheeling diode, to reduce number of devices, reduce cost, and
It can reduce the parasitic capacitance of system.
Referring to Fig. 1, traditional GaN high electron mobility transistor (GaN High Electron Mobility
Transistor, GaN HEMT) device do not have body diode, traditional GaN HEMT device in the off case, if to leakage
Pole 100 applies the threshold voltage that a negative voltage makes the opposite voltage between grid 105 and drain electrode 100 be greater than device, then device
The channel of part is opened, device reverse-conducting.However the reverse turn-on voltages of device are associated with the threshold voltage of device, if device
Threshold voltage it is larger, then the reverse turn-on voltages of device are larger.For an enhanced power switching device, it is often desirable that device
The threshold voltage of part is larger (being greater than 1V), and the reverse turn-on voltages of device are smaller.On the other hand, in many applications, need
To apply a negative voltage to grid to turn off, if grid voltage is negative, the reverse turn-on voltages of device further increase
Greatly.
Summary of the invention
The object of the present invention is to provide a kind of transistor device with integrated diode, which is reversely led
The pressure that is powered can be independently designed without being influenced by threshold voltage, and even if the grid to transistor device applies negative voltage
It is turned off, the reverse turn-on voltages of transistor device will not be influenced.
To achieve the above object, the present invention provides a kind of transistor device with integrated diode, including diode region,
Transistor area and isolated area, diode region have multiple anodes, and transistor area has a grid, a drain electrode and multiple sources
Pole, multiple source electrodes arrange that drain electrode and source electrode are located at the two sides of grid, source electrode and sun along the length direction for being parallel to drain electrode
Integrally as the source electrode of transistor device after the electrical connection of pole；Isolated area is between diode region and transistor area, diode region
Electric isolation is carried out by isolated area with transistor area.
One Preferable scheme is that, the first end of isolated area extend to grid close to drain electrode side, the second of isolated area
End extends to side of the source electrode far from drain electrode.
One Preferable scheme is that, the first end of isolated area extends to the region between grid and drain electrode, the of isolated area
Two ends extend to side of the source electrode far from drain electrode.
One Preferable scheme is that, diode region have at least two anodes, transistor area have at least two source electrodes.
One Preferable scheme is that, anode is alternately arranged with source electrode, and adjacent anode and grid are carried out electric by isolated area
Learn isolation.
One Preferable scheme is that, the anode of the anode of heterojunction schottky diode or groove-shaped Schottky diode is made
For the anode of diode region.
One Preferable scheme is that, conduct after the source electrode of field effect transistor is electrically connected with the grid of the field effect transistor
The anode of diode region.
One Preferable scheme is that, grid is junction gate or metal medium grid or trench gate or the processed grid of fluorine ion
Pole.
The beneficial effects of the present invention are:
When the grid voltage of transistor device of the invention is greater than threshold voltage, if applying forward voltage in drain electrode,
Transistor device is connected by transistor area.If applying negative voltage in drain electrode, diode area is first connected, and electric current will not be brilliant
The gate turn-off in body area under control, so the reverse turn-on voltages of transistor device are not restricted by transistor device threshold voltage.When
When grid applies negative voltage shutdown transistor device, reverse turn-on voltages will not be by the restriction of grid negative voltage.In addition,
The access area between grid and drain electrode is shared in diode region and transistor area, to reduce the forward conduction electricity of transistor device
Resistance and reverse-conducting resistance.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of existing GaN high electron mobility transistor.
Fig. 2 is the structural schematic diagram of transistor device embodiment of the present invention.
Fig. 3 is the sectional view in Fig. 2 at A-A.
Fig. 4 is the sectional view in Fig. 2 at B-B.
When Fig. 5 is that the grid voltage of transistor device embodiment of the present invention is greater than threshold voltage, apply positive electricity in drain electrode
After pressure, transistor device internal current flows to schematic diagram.
Fig. 6 be in transistor device embodiment of the present invention when transistor device shutdown, it is brilliant after drain electrode applies negative voltage
Body tube device internal current flows to schematic diagram.
The invention will be further described with reference to the accompanying drawings and embodiments.
Specific embodiment
Referring to fig. 2, the transistor device with integrated diode of the present embodiment is GaN high electron mobility crystal
(GaN HEMT) device is managed, which includes diode region, transistor area and isolated area 16, and diode region has multiple
Anode 11, transistor area have grid 15, one drain electrodes 10 and multiple source electrodes 12, and multiple source electrodes 12 are along being parallel to drain electrode
10 length direction arrangement, drain electrode 10 and source electrode 12 are located at the two sides of grid 15, and source electrode 12 is whole after being electrically connected with anode 11
Body has the source electrode of the transistor device of integrated diode as the present invention, and grid 15 is as transistor device of the present invention
Grid, drain electrode of the drain electrode 10 as transistor device of the present invention.Isolated area 16 is between diode region and transistor area, two poles
Area under control and transistor area pass through the progress electric isolation of isolated area 16.When the voltage for being less than threshold voltage to the application of grid 15 one
When, the channel drain electrode 10 of the diode region from anode 11 to transistor device tends to remain on.
The first end of isolated area 16 extends to the region between grid 15 and drain electrode 10, and does not extend to drain electrode 10, i.e., every
With a certain distance from having between first end and drain electrode 10 from area 16, the second end of isolated area 16 extends to the source electrode 12 of transistor area
Side far from drain electrode.Optionally, the first end of isolated area 16 can also only extend to grid 15 close to the side of the drain electrode.
The anode 11 in second level area under control and the source electrode 12 of transistor area are alternately arranged and along the length sides for being parallel to drain electrode 10
To arrangement, two adjacent anodes 11 and source electrode 12 pass through the progress electric isolation of isolated area 16.Isolated area 16 can pass through ion
The conducting channel that the modes such as injection or etching eliminate the region is formed.
Referring to Fig. 3 and Fig. 4, transistor device of the invention is enhanced power switching device, which is system
Make the epitaxial multilayer structure on substrate 121 comprising substrate 121 and the mistake successively grown from bottom to top on substrate 121
Cross layer 122, channel layer 123, barrier layer 124 and dielectric layer 125, the source electrode 12 of transistor area and drain electrode 10 and diode region
Anode 11 is formed in the top of barrier layer 124 and between barrier layer 124 and dielectric layer 125.Barrier layer 124 and dielectric layer
It is also formed between 125 p-type gallium nitride layer 13 (p-GaN), the grid 15 of transistor area is formed in the upper of p-type gallium nitride layer 13
Square, the top of p-type gallium nitride layer 13 offers grid metal contact hole 14 in dielectric layer 125, and grid 15 has what is extended downwardly to prolong
Extending portion, the extension pass through grid metal contact hole 14 and are connected with p-type gallium nitride layer 13.
It is the structural schematic diagram of diode region in transistor device referring to Fig. 3, Fig. 3.Optionally, diode in the present embodiment
Anode 11 using heterojunction schottky diode anode.Diode anode 11 can also be used groove-shaped in practical application
The anode of Schottky diode, conduct after can also being electrically connected the source electrode of field effect transistor with the grid of the field effect transistor
The anode 11 of diode region, or using other diode anode structures.
Referring to fig. 4, Fig. 4 is the structural schematic diagram of transistor area in transistor device.Optionally, transistor in the present embodiment
The grid 15 in area is using junction gate structure, and metal medium grid can also be used in the grid 15 of transistor area in practical application
(MIS grid) or trench gate or the processed grid of fluorine ion or other gate structures.
As shown in figure 5, when 15 voltage of grid of transistor device is greater than threshold voltage, if applying positive electricity in drain electrode 10
Pressure, then transistor device is connected by transistor area, and current direction is as shown in arrow direction in figure at this time.As shown in fig. 6, when crystalline substance
When body tube device turns off, if applying negative voltage in drain electrode 10, diode area is first connected, and electric current will not be by the grid of transistor area
Pole 15 turns off, and current direction is as shown in arrow direction in figure at this time, so the reverse turn-on voltages of transistor device are not by crystal
The restriction of tube device threshold voltage is not also restricted by the negative voltage of grid 15.
In addition, diode region has at least two anodes 11, transistor area has at least two source electrodes 12, multiple source electrodes 12
Along the length direction arrangement for being parallel to drain electrode 10, the particular number of anode 11 and source electrode 12 depends on required current class,
Current class is higher, and the quantity of anode 11 and source electrode 12 is more.
Therefore when the grid voltage of the transistor device with integrated diode of the invention is greater than threshold voltage
When, if applying forward voltage in drain electrode, transistor device is connected by transistor area.If in drain electrode application negative voltage, two
Pole pipe region is first connected, electric current will not by the gate turn-off of transistor area, so the reverse turn-on voltages of transistor device not by
The restriction of transistor device threshold voltage, therefore the reverse turn-on voltages of transistor device can be independently designed without by threshold
Threshold voltage influences.And it is turned off even if applying negative voltage to the grid of transistor device, transistor device will not be influenced
Reverse turn-on voltages.In addition, the access area between grid and drain electrode is shared in diode region and transistor area, to reduce crystalline substance
The forward conduction resistance and reverse-conducting resistance of body tube device.
Finally, it should be noted that has been described above is only a preferred embodiment of the present invention, it is noted that for ability
For the those of ordinary skill in domain, without departing from the inventive concept of the premise, various modifications and improvements can be made, these
Belong to protection scope of the present invention.
Claims (7)
1. the transistor device with integrated diode, it is characterised in that: including
Diode region, the diode region have multiple anodes；
Transistor area, the transistor area have a grid, a drain electrode and multiple source electrodes, and multiple source electrodes are along parallel
Arranged in the length direction of the drain electrode, the drain electrode and the source electrode are located at the two sides of the grid, the source electrode with
Source electrode after the anode electrical connection as the transistor device；
Isolated area, the isolated area is between the diode region and the transistor area, the diode region and the crystalline substance
Body area under control carries out electric isolation, the conductive ditch that the isolated area passes through the elimination isolated area region by the isolated area
Road is formed；
The anode is alternately arranged with the source electrode, and the adjacent anode and the source electrode pass through isolated area progress electricity
Isolation.
2. transistor device according to claim 1, it is characterised in that:
The first end of the isolated area extends to the grid close to the side of the drain electrode, and the second end of the isolated area extends
To side of the source electrode far from the drain electrode.
3. transistor device according to claim 1, it is characterised in that:
The first end of the isolated area extends between the grid and the drain electrode, and the second end of the isolated area extends to institute
State side of the source electrode far from the drain electrode.
4. transistor device according to any one of claims 1 to 3, it is characterised in that:
The diode region has at least two anodes, and the transistor area has at least two source electrodes.
5. transistor device according to any one of claims 1 to 3, it is characterised in that:
The anode of the anode of heterojunction schottky diode or the anode of groove-shaped Schottky diode as the diode region.
6. transistor device according to any one of claims 1 to 3, it is characterised in that:
Anode as the diode region after the source electrode of field effect transistor is electrically connected with the grid of the field effect transistor.
7. transistor device according to any one of claims 1 to 3, it is characterised in that:
The grid is junction gate or metal medium grid or trench gate or the processed grid of fluorine ion.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710894561.4A CN107482006B (en) | 2017-09-28 | 2017-09-28 | Transistor device with integrated diode |
| PCT/CN2017/104179 WO2019061214A1 (en) | 2017-09-28 | 2017-09-29 | Transistor device with integrated diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710894561.4A CN107482006B (en) | 2017-09-28 | 2017-09-28 | Transistor device with integrated diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107482006A CN107482006A (en) | 2017-12-15 |
| CN107482006B true CN107482006B (en) | 2019-03-15 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710894561.4A Active CN107482006B (en) | 2017-09-28 | 2017-09-28 | Transistor device with integrated diode |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107482006B (en) |
| WO (1) | WO2019061214A1 (en) |
Citations (5)
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| JPH1197715A (en) * | 1997-09-19 | 1999-04-09 | Toshiba Corp | Semiconductor device |
| CN1468449A (en) * | 2000-10-06 | 2004-01-14 | 通用半导体公司 | Trench dmos transistor with embedded trench schottky rectifier |
| CN102339827A (en) * | 2010-07-16 | 2012-02-01 | 茂达电子股份有限公司 | Integration of metal-oxide-semiconductor field-effect transistor (MOSFET) and Schottky diode and method for manufacturing same |
| CN102054774B (en) * | 2009-10-28 | 2012-11-21 | 无锡华润上华半导体有限公司 | VDMOS (vertical double diffused metal oxide semiconductor) transistor compatible LDMOS (laterally diffused metal oxide semiconductor) transistor and manufacturing method thereof |
| CN103262244B (en) * | 2010-12-15 | 2016-05-04 | 特兰斯夫公司 | There is the transistor of isolated area |
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| US8735968B2 (en) * | 2010-12-28 | 2014-05-27 | Monolithic Power Systems, Inc. | Integrated MOSFET devices with Schottky diodes and associated methods of manufacturing |
| KR20130004707A (en) * | 2011-07-04 | 2013-01-14 | 삼성전기주식회사 | Nitride semiconductor device, manufacturing method thereof and nitride semiconductor power device |
| US9129990B2 (en) * | 2012-06-29 | 2015-09-08 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
| CN103730464A (en) * | 2012-10-16 | 2014-04-16 | 浙江大学苏州工业技术研究院 | Semiconductor device with integratable fly-wheel diode, and manufacturing method of semiconductor device |
| CN104201201B (en) * | 2014-09-16 | 2017-03-15 | 电子科技大学 | A kind of adaptive-biased field plate for GaN base HEMT device |
| US10153276B2 (en) * | 2014-12-17 | 2018-12-11 | Infineon Technologies Austria Ag | Group III heterojunction semiconductor device having silicon carbide-containing lateral diode |
| CN207217534U (en) * | 2017-09-28 | 2018-04-10 | 英诺赛科（珠海）科技有限公司 | Transistor device with integrated diode |
-
2017
- 2017-09-28 CN CN201710894561.4A patent/CN107482006B/en active Active
- 2017-09-29 WO PCT/CN2017/104179 patent/WO2019061214A1/en active Application Filing
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1197715A (en) * | 1997-09-19 | 1999-04-09 | Toshiba Corp | Semiconductor device |
| CN1468449A (en) * | 2000-10-06 | 2004-01-14 | 通用半导体公司 | Trench dmos transistor with embedded trench schottky rectifier |
| CN102054774B (en) * | 2009-10-28 | 2012-11-21 | 无锡华润上华半导体有限公司 | VDMOS (vertical double diffused metal oxide semiconductor) transistor compatible LDMOS (laterally diffused metal oxide semiconductor) transistor and manufacturing method thereof |
| CN102339827A (en) * | 2010-07-16 | 2012-02-01 | 茂达电子股份有限公司 | Integration of metal-oxide-semiconductor field-effect transistor (MOSFET) and Schottky diode and method for manufacturing same |
| CN103262244B (en) * | 2010-12-15 | 2016-05-04 | 特兰斯夫公司 | There is the transistor of isolated area |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019061214A1 (en) | 2019-04-04 |
| CN107482006A (en) | 2017-12-15 |
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