CN103730464A - Semiconductor device with integratable fly-wheel diode, and manufacturing method of semiconductor device - Google Patents
Semiconductor device with integratable fly-wheel diode, and manufacturing method of semiconductor device Download PDFInfo
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- CN103730464A CN103730464A CN201210390960.4A CN201210390960A CN103730464A CN 103730464 A CN103730464 A CN 103730464A CN 201210390960 A CN201210390960 A CN 201210390960A CN 103730464 A CN103730464 A CN 103730464A
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Abstract
The invention discloses a semiconductor device with an integratable fly-wheel diode. The semiconductor device is formed by connecting a three-terminal HEMT device of III-nitride and a two-terminal SBD device of the III-nitride in parallel, and metal electrodes are connected through the mode that metal electric plates are located above the devices or on the periphery of the devices for guiding. According to the HEMT with the integratable fly-wheel diode, due to the diode provided by the HEMT, the complex process of modularization of an externally-connected diode is avoided, the circuit size and the design cost are greatly reduced, and the operation stability of a chip is improved. The semiconductor device is suitable for being applied to devices of a planar structure.
Description
Technical field
The present invention relates to a kind of semiconductor device of integrated fly-wheel diode, the invention still further relates to a kind of preparation method of semiconductor device of integrated fly-wheel diode, semiconductor device of the present invention is mainly used in power integrated circuit.
Background technology
III-V nitride semiconductor devices is the outstanding representative of power semiconductor of future generation.III-V hi-nitride semiconductor material has relative first generation silicon power semiconductor material more outstanding current lead-through and voltage blocking ability, can realize low-down conducting resistance and quick switching time.Therefore be adapted at the application of the integrated direction of semiconductor power.
The common III-V group-III nitride type device that is applied in power direction is because its structure cannot have natural fly-wheel diode as MOSFET device, thereby needs to arrange extra fly-wheel diode in the circuit such as inversion conversion.Fig. 1 illustrates traditional AlGaN/GaNHEMT structure, and it can be designed as the transistor of the threshold voltage of have-3V.Layer 10 is such as SiC, sapphire, Si, the substrate of the insulation such as GaN or semi insulating material, layer 11 is GaN resilient coatings, layer 12 is AlGaN, has for example Al composition of 20-40%. dotted line represents to be present in the two-dimensional electron gas (2DEG) in this structure, thereby require to have negative grid voltage so that the 2DEG below grid exhausts, makes device cut-off.
Fig. 2 is the inverter circuit assembly that adopts the traditional normal open type AlGaN/GaN HEMT device in Fig. 1, in figure, the AlGaN/GaN HEMT transistor of each bridge wall needs reversal connection to have the fly-wheel diode that mates withstand voltage and current capacity, to guarantee the normal operation of circuit.
With an AlGaN/GaN HEMT for fly-wheel diode that can be integrated, the diode carrying by it, has avoided the modular complicated technology of external diode, greatly reduces circuit size and design cost, has improved the stability of chip operation.The popularization of integrability module is very popular research direction of field of power electronics.
Summary of the invention
The present invention proposes a kind of new integrated power semiconductor device module, is applicable to being applied to the power device of planar structure.
A kind of semiconductor device of integrated fly-wheel diode, it is characterized in that: comprising: A part, three end HEMT devices of III group-III nitride, there is drift region and conducting channel that semi-conducting material forms, B part, the two ends SBD device of III group-III nitride, has drift region and conducting channel that semi-conducting material forms.A part partly adopts the extension preparation of a slice Grown with B, and adopts insulating material to isolate.A part is end to end with B part, forms parallel-connection structure.
A preparation method for the semiconductor device of integrated fly-wheel diode, is characterized in that: comprise the steps: on substrate to form the semi-conducting material N face that can conduct electricity or the stack layer of Ga face by epitaxial growth; On surface, form passivation layer; Remove part passivation layer, carry out etching and form groove, in groove, form insulating material, diode and HEMT are isolated; By mask plate, respectively diode and HEMT are carried out to partial etching, plated metal; Draw metal electrode board, at device surface, be connected.
Accompanying drawing explanation
Fig. 1 is traditional depletion type III group-III nitride HMET device generalized section
Fig. 2 is that traditional depletion type III group-III nitride is with the connection diagram of fly-wheel diode module
Fig. 3 is a kind of generalized section (wherein the SiN passivation of semi-conducting material device surface does not draw) with the semiconductor device of integrated fly-wheel diode of the present invention
Fig. 4 is the schematic top plan view (wherein the SiN passivation of semi-conducting material device surface does not draw) of the semiconductor device of a kind of integrated fly-wheel diode of the present invention
Fig. 5 is the schematic top plan view (wherein the SiN passivation of semi-conducting material device surface does not draw) of the semiconductor device of a kind of integrated fly-wheel diode of the present invention
Fig. 6 is the schematic top plan view (wherein the SiN passivation of semi-conducting material device surface does not draw) of the semiconductor device of a kind of integrated fly-wheel diode of the present invention
Fig. 7 is the schematic top plan view (wherein the SiN passivation of semi-conducting material device surface does not draw) of the semiconductor device of a kind of integrated fly-wheel diode of the present invention
Wherein:
301, first kind semi-conducting material
302, Equations of The Second Kind semi-conducting material
303, the three based semiconductor materials
304, the four class conductive semiconductor materials
305, the five based semiconductor materials
307,308,309,310,311, metal electrode
312, metal electroplax
313, the six class insulator-semiconductor materials
Embodiment
Embodiment 1
Fig. 3 is the semiconductor device profile of a kind of integrated fly-wheel diode of the present invention, below in conjunction with Fig. 3, describes semiconductor device of the present invention in detail.
A semiconductor device for integrated fly-wheel diode, comprising: substrate layer 301, for insulation or semi-insulating type Semiconductor substrate, can be the materials such as silicon, sapphire or carborundum; Crystal nucleation layer 302, is non-conductive Semiconductor substrate, can be aluminium nitride; 303-305 is that semi-conducting material is conductive layer and the barrier layer of realizing 2DEG raceway groove, can be aluminium gallium nitride, and III-V family element wherein can be replaced by congeners, and the mole coefficient X scope of aluminium element is 0≤X≤0.5; Separator 313, is non-conductive semi-conducting material, realizes the electricity isolation of diode and HEMT device; Device surface is with metal, and wherein 307,309,310 is ohmic contact, and 308,311 is Schottky contacts; By metal electroplax 312 above device or device periphery by electroplax, guide metal electrode 309,310 be connected.
Embodiment 2
Fig. 4,5, the 6 semiconductor device profiles that are a kind of integrated fly-wheel diode of the present invention, below in conjunction with Fig. 4,5,6 describe semiconductor device of the present invention in detail.
A semiconductor device with integrated fly-wheel diode, comprising: A part, and three end HEMT devices of III group-III nitride, have drift region and conducting channel that semi-conducting material forms; B part, the two ends SBD device of III group-III nitride, has drift region and conducting channel that semi-conducting material forms.Its shape can be the enclosed in Fig. 3, also can be Fig. 4, the adjacent formula in 5, wherein three end HEMT devices of III group-III nitride are square, the two ends SBD device of III group-III nitride is square or circular, by metal electroplax 406,508,602 above device or device periphery by electroplax, guide metal electrode 405,505,605 respectively with 408,506, and 606 are connected.
By above-mentioned example, set forth the present invention, also can adopt other example to realize the present invention, the present invention is not limited to above-mentioned instantiation, so the present invention is by claims circumscription simultaneously.
Claims (17)
1. a semiconductor device for integrated fly-wheel diode, comprising:
Gate electrode;
Source electrode and drain electrode;
Anode electrode and cathode electrode;
A series of III group iii nitride layers, its formation has and described source electrode, and drain electrode and cathode electrode form ohmic contact, and the N face of anode electrode and gate electrode formation Schottky contacts is stacking.
2. device as claimed in claim 1, wherein, the described the superiors wherein form the channel layer of 2DEG in the access area of device.
3. device as claimed in claim 2, wherein, the area of grid of described raceway groove exists in the situation that does not put on described grid voltage and comprises 2DEG, and described device is depletion mode device.
4. device as claimed in claim 1, also comprises the anode field plate extending towards described cathode electrode.
5. device as claimed in claim 1, also comprises the grid field plate extending towards described drain electrode.
6. device as claimed in claim 1, surface coverage wherein comprises SiN.
7. device as claimed in claim 1, its substrate comprises sapphire, Si, the insulation such as SiC or nonisulated substrate.
8. device as claimed in claim 1, described in it, cathode electrode can be connected with described drain electrode by the metal extending.
9. a semiconductor device for integrated fly-wheel diode, comprising:
Gate electrode;
Source electrode and drain electrode;
Anode electrode and cathode electrode;
A series of III group iii nitride layers, its formation has and described source electrode, and drain electrode and cathode electrode form ohmic contact, and the Ga face of anode electrode and gate electrode formation Schottky contacts is stacking.
10. device as claimed in claim 9, wherein, the described the superiors wherein form the channel layer of 2DEG in the access area of device.
11. devices as claimed in claim 10, wherein, the area of grid of described raceway groove exists in the situation that does not put on described grid voltage and comprises 2DEG, and described device is depletion mode device.
12. devices as claimed in claim 9, also comprise the anode field plate extending towards described cathode electrode.
13. devices as claimed in claim 9, also comprise the grid field plate extending towards described drain electrode.
14. devices as claimed in claim 9, surface coverage wherein comprises SiN.
15. devices as claimed in claim 9, its substrate comprises sapphire, Si, the insulation such as SiC or nonisulated substrate.
16. devices as claimed in claim 9, described in it, negative electrode can be connected with described drain electrode by the metal extending.
17. as described in claim 1,9 a kind of preparation method of semiconductor device of integrated fly-wheel diode, it is characterized in that: comprise the steps:
1) on substrate, by epitaxial growth, form the semi-conducting material N face that can conduct electricity or the stack layer of Ga face.
2) on surface, form passivation layer, remove part passivation layer, carry out etching and form groove, in groove, form insulating material, diode and HEMT are isolated.
3) by mask plate, respectively diode and HEMT are carried out to partial etching, plated metal.
4) draw metal electrode board, at device surface, be connected.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019061214A1 (en) * | 2017-09-28 | 2019-04-04 | 英诺赛科（珠海）科技有限公司 | Transistor device with integrated diode |
| CN112840464A (en) * | 2021-01-12 | 2021-05-25 | 英诺赛科(苏州)半导体有限公司 | Semiconductor device and method for manufacturing the same |
| WO2023115701A1 (en) * | 2021-12-22 | 2023-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii-group nitride transistor structure capable of reducing current leakage, and manufacturing method therefor |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101005096A (en) * | 2005-12-19 | 2007-07-25 | M/A-Com公司 | Dual field plate mesfet and its forming method |
| CN101510549A (en) * | 2009-03-31 | 2009-08-19 | 电子科技大学 | Transversal device of semiconductor |
| CN101771073A (en) * | 2010-01-15 | 2010-07-07 | 电子科技大学 | High-speed insulated gate bipolar transistor on lateral SOI |
| CN101969071A (en) * | 2009-07-27 | 2011-02-09 | 香港科技大学 | Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same |
| CN102403347A (en) * | 2010-09-14 | 2012-04-04 | 三星Led株式会社 | Gallium nitride based semiconductor devices and methods of manufacturing the same |
-
2012
- 2012-10-16 CN CN201210390960.4A patent/CN103730464A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101005096A (en) * | 2005-12-19 | 2007-07-25 | M/A-Com公司 | Dual field plate mesfet and its forming method |
| CN101510549A (en) * | 2009-03-31 | 2009-08-19 | 电子科技大学 | Transversal device of semiconductor |
| CN101969071A (en) * | 2009-07-27 | 2011-02-09 | 香港科技大学 | Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same |
| CN101771073A (en) * | 2010-01-15 | 2010-07-07 | 电子科技大学 | High-speed insulated gate bipolar transistor on lateral SOI |
| CN102403347A (en) * | 2010-09-14 | 2012-04-04 | 三星Led株式会社 | Gallium nitride based semiconductor devices and methods of manufacturing the same |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019061214A1 (en) * | 2017-09-28 | 2019-04-04 | 英诺赛科（珠海）科技有限公司 | Transistor device with integrated diode |
| CN112840464A (en) * | 2021-01-12 | 2021-05-25 | 英诺赛科(苏州)半导体有限公司 | Semiconductor device and method for manufacturing the same |
| WO2023115701A1 (en) * | 2021-12-22 | 2023-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | Iii-group nitride transistor structure capable of reducing current leakage, and manufacturing method therefor |
| US11810910B2 (en) | 2021-12-22 | 2023-11-07 | Suzhou Institute Of Nano-Tech And Nano-Bionics (Sinano) , Chinese Academy Of Sciences | Group III nitride transistor structure capable of reducing leakage current and fabricating method thereof |
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