CN107473741A - Anti-static ceramic and preparation method thereof - Google Patents
Anti-static ceramic and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to a kind of anti-static ceramic and preparation method thereof.The preparation method of the anti-static ceramic comprises the following steps：Raw material is mixed to form compound, raw material includes zirconium oxide and conductive material, and conductive material is selected from least one of titanium nitride, titanium carbide, zirconium diboride and titanium diboride, and the mass ratio of the conductive material and the zirconium oxide is 5:100~30:100；Compound is molded, obtains base substrate；In the atmosphere of protective gas, base substrate is sintered at 1200 DEG C~1600 DEG C, obtains anti-static ceramic.The preparation method of above-mentioned anti-static ceramic can prepare a kind of new anti-static ceramic, and the anti-static ceramic that this method is prepared can replace the anti-static ceramic using rare tin oxide as raw material.
Description
Technical field
The present invention relates to ceramic material field, more particularly to a kind of anti-static ceramic and preparation method thereof.
Background technology
So far, what many anti-static products used is all epoxy and melamine, PVC (polyvinyl chloride), rubber etc.
Material, and relative to other antistatic materials, anti-static ceramic is in durability, corrosion-resistant, anti-aging, wear-resisting, resistance to compression, waterproof etc.
Aspect has more prominent performance, in addition, anti-static ceramic also have the characteristics that it is attractive in appearance, anti-pollution, fire prevention, it is anti-skidding so that
Obtain anti-static ceramic and be widely used in the neck such as medical equipment, the energy, Aero-Space, electronics, petrochemical industry and domestic life
Domain, thus, the anti-static ceramic for preparing high stability energy has great actual application value and application prospect.
At present, it is mainly conductive filler using antimony-doped tin oxide (ATO) to produce anti-static ceramic, because ATO
It is a kind of oxide semiconductor material with satisfactory electrical conductivity, stability is good, and corrosion resistance is strong, but tin oxide is as preparation
The critical materials of anti-static ceramic, it is a kind of important scarce resource, with the increasing to its yield, recovery time is held
Continuous, the scarcity of tin resource is more and more obvious.The developed countries such as the U.S., Japan take the rule for forbidding national tin resource exploitation in succession
It is fixed, then from the policy of external a large amount of imports, further, since application of the tin oxide in terms of other new and high technologies, causes the world
The constantly upper of tin resource price is grown.
In order to alleviate this situation, the use of tin oxide is reduced, current solution is to prepare ATO cladded type conductions to fill out
Material, generally preparing the method for the conductive filler of cladded type mainly has two kinds, and one kind is using silica powder as carrier, and use is non-homogeneous
The one layer of Sb doping SnO of Surface coating of nucleation process in silica powder2, prepare ATO coated Sis O2Conducting powder；Another kind is to aoxidize
Silica glass fiber is carrier, and SnO is adulterated using the one layer of Sb of Surface coating of heterogeneous nucleation process in silica glass fiber2Prepare
Conductive fiber.The conductive filler prepared using cladding process, about save 50% ATO.Oxidation is alleviated in a sense
The situation in short supply of tin, but inherently solve this problem, however, because tin oxide is rare, tin oxide price compared with
Height, cause the cost of anti-static ceramic higher, and ATO fillers are prepared using cladding process, add anti-static ceramic and making
Uncontrollable factor during standby, technique is increasingly complex, directly reduces the production efficiency of anti-static ceramic.
The content of the invention
Based on this, it is necessary to provide a kind of preparation method of new anti-static ceramic, the antistatic pottery that this method is prepared
Porcelain can replace the anti-static ceramic using rare tin oxide as raw material.
In addition, also provide a kind of anti-static ceramic.
A kind of preparation method of anti-static ceramic, comprises the following steps：
Raw material is mixed to form compound, the raw material includes zirconium oxide and conductive material, and the conductive material is selected from nitrogen
Change at least one of titanium, titanium carbide, zirconium diboride and titanium diboride, the mass ratio of the conductive material and the zirconium oxide is
5:100~30:100；
The compound is molded, obtains base substrate；And
In the atmosphere of protective gas, the base substrate is sintered at 1200 DEG C~1600 DEG C, obtains anti-static ceramic.
The preparation method of above-mentioned anti-static ceramic is by using in titanium nitride, titanium carbide, zirconium diboride and titanium diboride
At least one is used as conductive material, and it is 5 that will contain mass ratio:100~30:100 conductive material and the compound of zirconium oxide
Shaping form base substrate, then sintered in the atmosphere of protective gas at 1200 DEG C~1600 DEG C so that blank sintering into
While preferable mechanical strength, comparatively dense sintered body, conductive material and zirconium oxide, conductive material and conductive material is set to exist
Metallurgical binding occurs under high temperature, to form continuous conductive network in sintered body, so as to reduce the resistivity of ceramics, so that pottery
The surface resistivity of porcelain is 105Ω cm~1011Between Ω cm, and make ceramics have antistatic effect, can replace with
Rare tin oxide is the anti-static ceramic of raw material, relative to the preparation using rare tin oxide as the anti-static ceramic of raw material,
Raw material sources are more extensive, advantage of lower cost and preparation process are simple.
In one of the embodiments, described the step of raw material is mixed to form into compound, is specially：By the zirconium oxide
Add water for ball milling to mix 12 hours~96 hours with the conductive material, be subsequently added into binding agent and continue ball milling, obtain compound.
In one of the embodiments, described the step of adding water for ball milling to mix with the conductive material zirconium oxide
In, the zirconium oxide is 1 with the quality sum of the conductive material and the mass ratio of ball-milling medium:1~1:3.
In one of the embodiments, before described the step of being molded the compound, in addition to by the compound
Dry, then the step of mistake 80 mesh sieves~200 mesh sieve.
In one of the embodiments, the step of the drying is：It is small that 12 hours~24 are dried at 80 DEG C~100 DEG C
When.
In one of the embodiments, it is described in the atmosphere of protective gas, by the base substrate at 1200 DEG C~1600 DEG C
Before the step of lower sintering, in addition to the step of dumping：With 2 DEG C/min~6 DEG C/min of heating rate from room temperature to
200 DEG C~300 DEG C, and be incubated 1 hour~3 hours, then with 2 DEG C/min~5 DEG C/min of heating rate be warming up to 500 DEG C~
600 DEG C, and 1 hour~3 hours are incubated, then cool down.
In one of the embodiments, the method that the compound is molded is dry-pressing formed, cold isostatic compaction
Or injection moulding.
In one of the embodiments, it is described in the atmosphere of protective gas, by the base substrate at 1200 DEG C~1600 DEG C
The step of lower sintering is specially：In the atmosphere of the protective gas, by the base substrate with 2 DEG C/min~10 DEG C/min of liter
Warm speed is from room temperature to 1200 DEG C~1600 DEG C, and heat preservation sintering 1 hour~4 hours.
Obtained anti-static ceramic prepared by a kind of preparation method such as above-mentioned anti-static ceramic.
Brief description of the drawings
Fig. 1 is the flow chart of the preparation method of the anti-static ceramic of an embodiment.
Embodiment
For the ease of understanding the present invention, the present invention is described more fully below with reference to relevant drawings.In accompanying drawing
Give the preferred embodiment of the present invention.But the present invention can realize in many different forms, however it is not limited to herein
Described embodiment.On the contrary, the purpose for providing these embodiments is to make the understanding to the disclosure more saturating
It is thorough comprehensive.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein " and/or " include one or more phases
The arbitrary and all combination of the Listed Items of pass.
As shown in figure 1, the preparation method of the anti-static ceramic of an embodiment, comprises the following steps：
Step S110：Raw material is mixed to form compound.
Wherein, conductive material is selected from least one of titanium nitride, titanium carbide, zirconium diboride and titanium diboride, conduction material
The mass ratio of material and zirconium oxide is 5:100~30:100.By the way that conductive material is made jointly with zirconium oxide according to the proportion
The combination property of standby anti-static ceramic is more excellent, if doping is very few, it is impossible to forms continuous conductive network, does not reach anti-
The effect of electrostatic；And because conductive phase is generally evenly distributed in zirconia base, if conductive phase doping is excessive, zirconium oxide can be caused
Mechanical property, the consistency of ceramics greatly decline, so as to limit the application of zirconium oxide anti-static ceramic.Meanwhile phase
For metal, titanium nitride, titanium carbide, the coefficient of expansion of zirconium diboride and titanium diboride differ smaller with zirconium oxide, if adding gold
Category is used as conductive phase, easily causes ceramic phenomena such as ftractureing, and increases the preparation technology difficulty of anti-static ceramic.
In the present embodiment, the step of raw material being mixed to form into compound be specially：Zirconium oxide and conductive material are added
Water for ball milling mixes 12 hours~96 hours, is subsequently added into binding agent and continues ball milling, obtains compound.By first by zirconium oxide with leading
Electric material adds water for ball milling to mix, and adding binding agent mixing conductive material can be made to mix more uniform with zirconium oxide, so as to
Improve the microstructure of ceramics, improve mechanical strength, consistency and the antistatic performance of ceramics.
Specifically, the water in the step of adding water for ball milling to mix with conductive material zirconium oxide is deionized water.
Specifically, in the step of zirconium oxide and conductive material being added into water for ball milling, the quality sum of zirconium oxide and conductive material
Mass ratio with ball-milling medium is 1:1~1:3.Ratio of grinding media to material have impact on grinding efficiency, and can influence the particle diameter of powder after ball milling
And size, further influence the shaping of powder, the mechanics of sintering character and ceramics, electric property.
Specifically, the one kind of binding agent in polyethylene glycol 2000, Macrogol 3000 and Macrogol 6000.Bond
The quality of agent is the 5%~10% of the gross mass of zirconium oxide and conductive material.
Further, the median (D of zirconium oxide50) it is 2.0 μm~8.0 μm.Use the zirconium oxide energy of the particle size range
The anti-static ceramic for enough making subsequently to obtain has preferable consistency and preferable mechanical strength.
Further, the median of conductive material is 2.0 μm~8.0 μm.Use the conductive material energy of the particle size range
Enough make the distribution of resistance of anti-static ceramic more uniform.
Step S120：Compound is dried, then crosses the mesh sieve of 80 mesh sieves~200.
By the way that dried compound sieves, is granulated so that mixed powder has certain mobility, be advantageous to ceramics
Shaping.
Specifically, dry step is：Dried 12 hours~24 hours at 80 DEG C~100 DEG C.
Step S130：Compound is molded, obtains base substrate.
In the present embodiment, method compound being molded is dry-pressing formed or cold isostatic compaction.
Specifically, dry-pressing formed and cold isostatic compaction pressure is 10MPa~100MPa.
It should be noted that compound shaping is also not necessarily limited to use aforesaid way, such as step S110 can also be obtained
To compound be directly injection moulded, now, step S120 can be omitted；Or step S120 can also be obtained
Dried compound carries out gel casting forming, i.e., compound and organic monomer, crosslinking agent, initiator and catalyst is common
Casting.
Step S140：Base substrate is subjected to dumping processing.
In the present embodiment, it is specially by the step of base substrate progress dumping processing：With 2 DEG C/min~6 DEG C/min
Heating rate is incubated 1 hour~3 hours from room temperature to 200 DEG C~300 DEG C, then with 2 DEG C/min~5 DEG C/min
Heating rate is warming up to 500 DEG C~600 DEG C, and is incubated 1 hour~3 hours, then cools down.Handled by dumping to remove base substrate
In binding agent, and prevent base substrate from being ftractureed during follow-up sintering.And dumping processing can obtain the chi before the sintering of base substrate
Very little, so as to obtain the shrinkage factor of sintering, and shrinkage factor is to one of important parameter of exploitation of ceramic product.
It should be noted that the purpose of dumping processing is to prevent blank cracking, therefore, step S140 can also be saved
Slightly.
Step S150：In the atmosphere of protective gas, base substrate is sintered at 1200 DEG C~1600 DEG C, obtains antistatic pottery
Porcelain.
By being sintered at the temperature disclosed above in the atmosphere of protective gas, so that base substrate is being sintered into preferably machinery
While intensity, comparatively dense sintered body, make between conductive material and zirconium oxide, occur between conductive material and conductive material
Metallurgical binding, so as to continuous conductive network be formed in sintered body, so as to reduce the resistivity of ceramics, so that the surface electricity of ceramics
Resistance rate is 105Ω cm~1011Between Ω cm, and make effect of the ceramics with antistatic.
In the present embodiment, the step of sintering is specially：In the atmosphere of protective gas, by the base substrate after dumping with 2
DEG C/min~10 DEG C/min of heating rate from room temperature to 1200 DEG C~1600 DEG C, and heat preservation sintering 1 hour~4 is small
When.
Specifically, protective gas is inert gas, such as argon gas.
The preparation method of above-mentioned anti-static ceramic is by using in titanium nitride, titanium carbide, zirconium diboride and titanium diboride
At least one is used as conductive material, and it is 5 that will contain mass ratio:100~30:100 conductive material and the compound of zirconium oxide
Shaping form base substrate, then sintered in the atmosphere of protective gas at 1200 DEG C~1600 DEG C so that blank sintering into
While preferable mechanical strength, comparatively dense sintered body, conductive material and zirconium oxide, conductive material and conductive material is set to exist
Metallurgical binding occurs under high temperature, to form continuous conductive network in sintered body, so as to reduce the resistivity of ceramics, so that pottery
The surface resistivity of porcelain is 105Ω cm~1011Between Ω cm, and make ceramics have antistatic effect, can replace with
Rare tin oxide is the anti-static ceramic of raw material, relative to the preparation using rare tin oxide as the anti-static ceramic of raw material,
Raw material sources are more extensive, advantage of lower cost and preparation process are simple.
The anti-static ceramic of one embodiment, it is prepared by the preparation method of above-mentioned anti-static ceramic, antistatic pottery
Porcelain has preferable mechanical strength, higher consistency, and the surface resistivity of the anti-static ceramic is 105Ω cm~1011
Between Ω cm, there is the effect of antistatic, the anti-static ceramic using rare tin oxide as raw material can be replaced to use.
For specific embodiment part, (following examples unless otherwise specified, are not then contained except inevitable impurity below
The component pointed out is not known in addition other.)：
Embodiment 1
The preparation process of the anti-static ceramic of the present embodiment is as follows：
(1) zirconium oxide and conductive material are added into deionized water ball milling mixing 48 hours, is subsequently added into binding agent and continues ball milling 2
Hour, then dried 24 hours at 80 DEG C, obtain compound, wherein, conductive material is titanium carbide, conductive material and zirconium oxide
Median is 2.0 μm~8.0 μm, and the mass ratio of conductive material and zirconium oxide is 20:100, binding agent is polyethylene glycol
2000, the quality of binding agent is the 5% of the gross mass of zirconium oxide and conductive material；During ball milling, the matter of zirconium oxide and conductive material
The mass ratio for measuring sum and ball-milling medium is 1:2.
(2) compound is crossed into 80 mesh sieves, it is then dry-pressing formed under 50MPa pressure, obtain base substrate.
(3) base substrate is placed in tube furnace, with 5 DEG C/min of heating rate from room temperature to 300 DEG C, and it is small to be incubated 2
When, then 500 DEG C are warming up to 5 DEG C/min of heating rate, and 3 hours are incubated, room temperature is then cooled to the furnace, to be arranged
Glue processing.
(4) by the base substrate after step (3) dumping under the atmosphere of argon gas, with 5 DEG C/min of heating rate from room temperature
To 1200 DEG C, and heat preservation sintering 2 hours, obtain anti-static ceramic.
Using the consistency of Archimedes method test anti-static ceramic；Three-point bending method test is passed through using universal testing machine
The bending strength of the classical ceramics of model；Using the surface resistivity of four probe method test anti-static ceramic.
Consistency, bending strength and the surface resistivity of the anti-static ceramic of the present embodiment are shown in Table 1.
2~embodiment of embodiment 5
The preparation process of the anti-static ceramic of 2~embodiment of embodiment 5 is roughly the same with embodiment 1, and difference is, implements
The conductive material of example 2 and the mass ratio of zirconium oxide are 5:100；The conductive material of embodiment 3 and the mass ratio 15 of zirconium oxide:100；
The conductive material of embodiment 4 and the mass ratio of zirconium oxide are 30:100；The conductive material of embodiment 5 and the mass ratio of zirconium oxide are
25:100。
Test to obtain the cause of the anti-static ceramic of 2~embodiment of embodiment 5 respectively using the identical method of testing of embodiment 1
Density, bending strength and surface resistivity are shown in Table 1.
6~embodiment of embodiment 8
The preparation process of the anti-static ceramic of 6~embodiment of embodiment 8 is roughly the same with embodiment 1, and difference is, implements
The sintering temperature of example 6 is 1300 DEG C；The sintering temperature of embodiment 7 is 1450 DEG C；The sintering temperature of embodiment 8 is 1600 DEG C.
Test to obtain the cause of the anti-static ceramic of 6~embodiment of embodiment 8 respectively using the identical method of testing of embodiment 1
Density, bending strength and surface resistivity are shown in Table 1.
Embodiment 9
The preparation process of the anti-static ceramic of the present embodiment is roughly the same with embodiment 1, and difference is, the general of the present embodiment
The method of compound shaping is isostatic pressing, briquetting pressure 50MPa.
It is strong to test to obtain the consistency of the anti-static ceramic of the present embodiment, bending resistance using the identical method of testing of embodiment 1
Degree and surface resistivity are shown in Table 1.
Embodiment 10
The preparation process of the anti-static ceramic of the present embodiment is as follows：
(1) zirconium oxide and conductive material are added into deionized water ball milling mixing 96 hours, is subsequently added into binding agent and continues ball milling 2
Hour, then dried 12 hours at 100 DEG C, compound is obtained, wherein, conductive material is 1 by mass ratio:1 titanium nitride and carbon
Change titanium to form, the median of conductive material and zirconium oxide is 2.0 μm~8.0 μm, the mass ratio of conductive material and zirconium oxide
For 20:100, binding agent is Macrogol 3000, and the quality of binding agent is the 10% of the gross mass of zirconium oxide and conductive material；Ball
During mill, the mass ratio of the quality sum and ball-milling medium of zirconium oxide and conductive material is 1:1.
(2) compound is crossed into 150 mesh sieves, it is then dry-pressing formed under 100MPa pressure, obtain base substrate.
(3) base substrate is placed in tube furnace, with 2 DEG C/min of heating rate from room temperature to 200 DEG C, and it is small to be incubated 3
When, then 600 DEG C are warming up to 2 DEG C/min of heating rate, and 1 hour is incubated, room temperature is then cooled to the furnace, to be arranged
Glue processing.
(4) by the base substrate after step (3) dumping under the atmosphere of argon gas, with 2 DEG C/min of heating rate from room temperature
To 1250 DEG C, and heat preservation sintering 1 hour, obtain anti-static ceramic.
Obtained using the identical method of testing of embodiment 1 consistency of the anti-static ceramic of the present embodiment, bending strength and
Surface resistivity is shown in Table 1.
Embodiment 11
The preparation process of the anti-static ceramic of the present embodiment is roughly the same with embodiment 10, and difference is, the present embodiment
The method that compound is molded is isostatic pressing, briquetting pressure 100MPa.
It is strong to test to obtain the consistency of the anti-static ceramic of the present embodiment, bending resistance using the identical method of testing of embodiment 1
Degree and surface resistivity are shown in Table 1.
12~embodiment of embodiment 14
The preparation process of the anti-static ceramic of 12~embodiment of embodiment 14 is roughly the same with embodiment 10, and difference is,
The sintering temperature of embodiment 12 is 1350 DEG C；The sintering temperature of embodiment 13 is 1450 DEG C, and the sintering temperature of embodiment 14 is
1600℃。
Test to obtain the anti-static ceramic of 12~embodiment of embodiment 14 respectively using the identical method of testing of embodiment 1
Consistency, bending strength and surface resistivity are shown in Table 1.
15~embodiment of embodiment 18
The preparation process of the anti-static ceramic of 15~embodiment of embodiment 18 is roughly the same with embodiment 10, and difference is,
The conductive material of embodiment 15 and the mass ratio of zirconium oxide are 5:100；The conductive material of embodiment 16 and the mass ratio of zirconium oxide
15:100；The conductive material of embodiment 17 and the mass ratio of zirconium oxide are 30:100；The conductive material and zirconium oxide of embodiment 18
Mass ratio be 25:100.
Test to obtain the anti-static ceramic of 15~embodiment of embodiment 18 respectively using the identical method of testing of embodiment 1
Consistency, bending strength and surface resistivity are shown in Table 1.
Embodiment 19
The preparation process of the anti-static ceramic of the present embodiment is as follows：
(1) zirconium oxide and conductive material are added into deionized water ball milling mixing 12 hours, is subsequently added into binding agent and continues ball milling 2
Hour, then dried 24 hours at 80 DEG C, compound is obtained, wherein, conductive material is 1 by mass ratio:1:1 titanium nitride, carbon
Change titanium and zirconium diboride forms, the median of conductive material and zirconium oxide is 2.0 μm~8.0 μm, conductive material and oxidation
The mass ratio of zirconium is 20:100, binding agent is Macrogol 3000, and the quality of binding agent is total matter of zirconium oxide and conductive material
The 8% of amount；During ball milling, the mass ratio of the quality sum and ball-milling medium of zirconium oxide and conductive material is 1:3.
(2) compound is crossed into 200 mesh sieves, it is then dry-pressing formed under 10MPa pressure, obtain base substrate.
(3) base substrate is placed in tube furnace, with 6 DEG C/min of heating rate from room temperature to 300 DEG C, and it is small to be incubated 1
When, then 550 DEG C are warming up to 3 DEG C/min of heating rate, and 2 hours are incubated, room temperature is then cooled to the furnace, to be arranged
Glue processing.
(4) by the base substrate after step (3) dumping under the atmosphere of argon gas, with 10 DEG C/min of heating rate from room temperature liter
Temperature is to 1200 DEG C, and heat preservation sintering 4 hours, obtains anti-static ceramic.
Obtained using the identical method of testing of embodiment 1 consistency of the anti-static ceramic of the present embodiment, bending strength and
Surface resistivity is shown in Table 1.
20~embodiment of embodiment 22
The preparation process of the anti-static ceramic of 20~embodiment of embodiment 22 is roughly the same with embodiment 19, and difference is,
The sintering temperature of embodiment 20 is 1350 DEG C；The sintering temperature of embodiment 21 is 1450 DEG C, and the sintering temperature of embodiment 22 is
1600℃。
Test to obtain the anti-static ceramic of 20~embodiment of embodiment 22 respectively using the identical method of testing of embodiment 1
Consistency, bending strength and surface resistivity are shown in Table 1.
23~embodiment of embodiment 26
The preparation process of the anti-static ceramic of 23~embodiment of embodiment 26 is roughly the same with embodiment 19, and difference is,
The conductive material of embodiment 23 and the mass ratio of zirconium oxide are 5:100；The conductive material of embodiment 24 and the mass ratio of zirconium oxide
15:100；The conductive material of embodiment 25 and the mass ratio of zirconium oxide are 30:100；The conductive material and zirconium oxide of embodiment 26
Mass ratio be 25:100.
Test to obtain the anti-static ceramic of 23~embodiment of embodiment 26 respectively using the identical method of testing of embodiment 1
Consistency, bending strength and surface resistivity are shown in Table 1.
Embodiment 27
The preparation process of the anti-static ceramic of the present embodiment is as follows：
(1) zirconium oxide and conductive material are added into deionized water ball milling mixing 48 hours, is subsequently added into binding agent and continues ball milling 2
Hour, then dried 24 hours at 80 DEG C, compound is obtained, wherein, conductive material is 1 by mass ratio:1:1:1 titanium nitride,
The median of titanium carbide, zirconium diboride and titanium diboride composition, conductive material and zirconium oxide is 2.0 μm~8.0 μm, conductive
The mass ratio of material and zirconium oxide is 20:100, binding agent is 1 by mass ratio:1 polyvinyl alcohol 2000 and polyvinyl alcohol 6000
Composition, the quality of binding agent are the 8% of the gross mass of zirconium oxide and conductive material；During ball milling, the matter of zirconium oxide and conductive material
The mass ratio for measuring sum and ball-milling medium is 1:2.
(2) compound is crossed into 80 mesh sieves, it is then dry-pressing formed under 80MPa pressure, obtain base substrate.
(3) base substrate is placed in tube furnace, with 5 DEG C/min of heating rate from room temperature to 300 DEG C, and it is small to be incubated 2
When, then 500 DEG C are warming up to 5 DEG C/min of heating rate, and 2 hours are incubated, room temperature is then cooled to the furnace, to be arranged
Glue processing.
(4) by the base substrate after step (3) dumping under the atmosphere of argon gas, with 5 DEG C/min of heating rate from room temperature
To 1200 DEG C, and heat preservation sintering 2 hours, obtain anti-static ceramic.
Obtained using the identical method of testing of embodiment 1 consistency of the anti-static ceramic of the present embodiment, bending strength and
Surface resistivity is shown in Table 1.
28~embodiment of embodiment 30
The preparation process of the anti-static ceramic of 28~embodiment of embodiment 30 is roughly the same with embodiment 27, and difference is,
The sintering temperature of embodiment 28 is 1350 DEG C；The sintering temperature of embodiment 29 is 1450 DEG C, and the sintering temperature of embodiment 30 is
1600℃。
Test to obtain the anti-static ceramic of 28~embodiment of embodiment 30 respectively using the identical method of testing of embodiment 1
Consistency, bending strength and surface resistivity are shown in Table 1.
31~embodiment of embodiment 34
The preparation process of the anti-static ceramic of 31~embodiment of embodiment 34 is roughly the same with embodiment 27, and difference is,
The conductive material of embodiment 31 and the mass ratio of zirconium oxide are 5:100；The conductive material of embodiment 32 and the mass ratio of zirconium oxide
15:100；The conductive material of embodiment 33 and the mass ratio of zirconium oxide are 30:100；The conductive material and zirconium oxide of embodiment 34
Mass ratio be 25:100.
Test to obtain the anti-static ceramic of 31~embodiment of embodiment 34 respectively using the identical method of testing of embodiment 1
Consistency, bending strength and surface resistivity are shown in Table 1.
35~embodiment of embodiment 36
The preparation process of the anti-static ceramic of 35~embodiment of the present embodiment 36 is roughly the same with embodiment 1, and difference is,
The conductive material of embodiment 35 is zirconium diboride；The conductive material of embodiment 36 is titanium diboride.
Test to obtain the anti-static ceramic of 35~embodiment of embodiment 36 respectively using the identical method of testing of embodiment 1
Consistency, bending strength and surface resistivity are shown in Table 1.
Embodiment 37
The preparation process of the anti-static ceramic of embodiment 37 is roughly the same with embodiment 1, and difference is, conductive material and oxygen
The mass ratio for changing zirconium is 4:100.
Test to obtain the consistency of the anti-static ceramic of embodiment 37 respectively using the identical method of testing of embodiment 1, resist
Curved intensity and surface resistivity are shown in Table 1.
Embodiment 38
The preparation process of the anti-static ceramic of embodiment 38 is roughly the same with embodiment 1, and difference is, conductive material and oxygen
The mass ratio for changing zirconium is 32:100.
Test to obtain the consistency of the anti-static ceramic of embodiment 38 respectively using the identical method of testing of embodiment 1, resist
Curved intensity and surface resistivity are shown in Table 1.
Table 1 is consistency, bending strength and the surface resistivity of the anti-static ceramic of embodiment 1~38.
Table 1
From table 1 it follows that the surface resistivity of the anti-static ceramic of 1~embodiment of embodiment 36 is respectively positioned on 105
Ω cm~1011Between Ω cm, this illustrates that above-mentioned anti-static ceramic has the effect of antistatic.And above-described embodiment 1~reality
The consistency for applying the anti-static ceramic of example 36 is at least 94%, and bending strength is all higher than 300MPa, have preferable consistency and
Preferable mechanical performance, although and the anti-static ceramic of embodiment 37 and embodiment 38 with higher consistency and preferably
Bending strength, but its surface resistivity is not but 105Ω cm~1011Between Ω cm.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that come for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (9)
1. a kind of preparation method of anti-static ceramic, it is characterised in that comprise the following steps：
Raw material is mixed to form compound, the raw material includes zirconium oxide and conductive material, the conductive material be selected from titanium nitride,
The mass ratio of at least one of titanium carbide, zirconium diboride and titanium diboride, the conductive material and the zirconium oxide is 5:100
~30:100；
The compound is molded, obtains base substrate；And
In the atmosphere of protective gas, the base substrate is sintered at 1200 DEG C~1600 DEG C, obtains anti-static ceramic.
2. the preparation method of anti-static ceramic according to claim 1, it is characterised in that it is described raw material is mixed to form it is mixed
Closing the step of expecting is specially：Add water for ball milling to mix 12 hours~96 hours with the conductive material zirconium oxide, then add
Enter binding agent and continue ball milling, obtain compound.
3. the preparation method of anti-static ceramic according to claim 2, it is characterised in that described by the zirconium oxide and institute
State in the step of conductive material adds water for ball milling to mix, the quality sum and ball-milling medium of the zirconium oxide and the conductive material
Mass ratio is 1:1~1:3.
4. the preparation method of anti-static ceramic according to claim 1, it is characterised in that described to be molded the compound
The step of before, in addition to the compound dried, the step of then crossing 80 mesh sieves~200 mesh sieve.
5. the preparation method of anti-static ceramic according to claim 4, it is characterised in that the step of the drying is：
Dried 12 hours~24 hours at 80 DEG C~100 DEG C.
6. the preparation method of anti-static ceramic according to claim 1, it is characterised in that the atmosphere in protective gas
In, before the step of base substrate is sintered at 1200 DEG C~1600 DEG C, in addition to the step of dumping：With 2 DEG C/min~6
DEG C/min heating rate from room temperature to 200 DEG C~300 DEG C, and 1 hour~3 hours are incubated, then with 2 DEG C/min~5
DEG C/min heating rate be warming up to 500 DEG C~600 DEG C, and be incubated 1 hour~3 hours, then cool down.
7. the preparation method of anti-static ceramic according to claim 1, it is characterised in that described to be molded the compound
Method be dry-pressing formed, cold isostatic compaction or injection moulding.
8. the preparation method of anti-static ceramic according to claim 1, it is characterised in that the atmosphere in protective gas
In, the step of base substrate is sintered at 1200 DEG C~1600 DEG C is specially：In the atmosphere of the protective gas, by described in
Base substrate with 2 DEG C/min~10 DEG C/min of heating rate from room temperature to 1200 DEG C~1600 DEG C, and heat preservation sintering 1 hour
~4 hours.
9. the antistatic pottery that a kind of preparation method of anti-static ceramic as described in claim 1~8 any one is prepared
Porcelain.
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| CN109704758A (en) * | 2019-02-26 | 2019-05-03 | 九江嘉远科技有限公司 | A kind of anti-static ceramic formula, anti-static ceramic suction nozzle and its manufacture craft |
| CN111205069A (en) * | 2020-03-09 | 2020-05-29 | 上海孚士德建筑科技有限公司 | Preparation method of anti-static ceramic tile |
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| CN115043644A (en) * | 2022-04-13 | 2022-09-13 | 山东电盾科技股份有限公司 | Ceramic hand mold with anti-static function and preparation process thereof |
| CN115043644B (en) * | 2022-04-13 | 2023-03-24 | 山东电盾科技股份有限公司 | Ceramic hand mold with anti-static function and preparation process thereof |
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