CN107464860A - 发光二极管芯片的制造方法和发光二极管芯片 - Google Patents
发光二极管芯片的制造方法和发光二极管芯片 Download PDFInfo
- Publication number
- CN107464860A CN107464860A CN201710398310.7A CN201710398310A CN107464860A CN 107464860 A CN107464860 A CN 107464860A CN 201710398310 A CN201710398310 A CN 201710398310A CN 107464860 A CN107464860 A CN 107464860A
- Authority
- CN
- China
- Prior art keywords
- chip
- light
- emitting diode
- transparency carrier
- backlight unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 230000011218 segmentation Effects 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000005304 optical glass Substances 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011222 crystalline ceramic Substances 0.000 claims description 3
- 229910002106 crystalline ceramic Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 8
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000004425 Makrolon Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000002173 cutting fluid Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Dicing (AREA)
- Led Device Packages (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Laser Beam Processing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016111540A JP2017220476A (ja) | 2016-06-03 | 2016-06-03 | 発光ダイオードチップの製造方法及び発光ダイオードチップ |
| JP2016-111540 | 2016-06-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107464860A true CN107464860A (zh) | 2017-12-12 |
Family
ID=60546134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710398310.7A Pending CN107464860A (zh) | 2016-06-03 | 2017-05-31 | 发光二极管芯片的制造方法和发光二极管芯片 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2017220476A (ja) |
| KR (1) | KR20170137647A (ja) |
| CN (1) | CN107464860A (ja) |
| TW (1) | TW201812889A (ja) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499508A (zh) * | 2008-02-01 | 2009-08-05 | 群康科技(深圳)有限公司 | 发光二极管装置及其制造方法 |
| CN101807568A (zh) * | 2010-03-04 | 2010-08-18 | 四川锦明光电股份有限公司 | 新型的多芯片led封装结构及其加工方法 |
| CN102299105A (zh) * | 2010-05-20 | 2011-12-28 | 株式会社迪思科 | 蓝宝石晶片的分割方法 |
| CN202616282U (zh) * | 2012-05-30 | 2012-12-19 | 华南理工大学 | 一种具有金字塔阵列结构的led芯片 |
| CN104160520A (zh) * | 2012-02-01 | 2014-11-19 | 松下电器产业株式会社 | 半导体发光元件、其制造方法和光源装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006278751A (ja) * | 2005-03-29 | 2006-10-12 | Mitsubishi Cable Ind Ltd | ＧａＮ系半導体発光素子 |
| KR101843501B1 (ko) * | 2011-03-30 | 2018-03-29 | 서울반도체 주식회사 | 발광장치 |
| JP2014175354A (ja) * | 2013-03-06 | 2014-09-22 | Disco Abrasive Syst Ltd | 発光ダイオード |
| TWI593139B (zh) * | 2013-08-30 | 2017-07-21 | Asahi Kasei E-Materials Corp | Semiconductor light-emitting element and optical film |
| CN104993029A (zh) * | 2015-07-09 | 2015-10-21 | 佛山市南海区联合广东新光源产业创新中心 | 半导体发光芯片级封装 |
-
2016
- 2016-06-03 JP JP2016111540A patent/JP2017220476A/ja active Pending
-
2017
- 2017-05-03 TW TW106114603A patent/TW201812889A/zh unknown
- 2017-05-31 CN CN201710398310.7A patent/CN107464860A/zh active Pending
- 2017-06-01 KR KR1020170068439A patent/KR20170137647A/ko not_active Application Discontinuation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101499508A (zh) * | 2008-02-01 | 2009-08-05 | 群康科技(深圳)有限公司 | 发光二极管装置及其制造方法 |
| CN101807568A (zh) * | 2010-03-04 | 2010-08-18 | 四川锦明光电股份有限公司 | 新型的多芯片led封装结构及其加工方法 |
| CN102299105A (zh) * | 2010-05-20 | 2011-12-28 | 株式会社迪思科 | 蓝宝石晶片的分割方法 |
| CN104160520A (zh) * | 2012-02-01 | 2014-11-19 | 松下电器产业株式会社 | 半导体发光元件、其制造方法和光源装置 |
| CN202616282U (zh) * | 2012-05-30 | 2012-12-19 | 华南理工大学 | 一种具有金字塔阵列结构的led芯片 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170137647A (ko) | 2017-12-13 |
| TW201812889A (zh) | 2018-04-01 |
| JP2017220476A (ja) | 2017-12-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107919432A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107706292A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107706291A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107611237A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107768486A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108400226A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108538994A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107464860A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107464872A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107799630A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107706293A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107527986A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108022999A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107527985A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107611086A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108023012A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN107895714A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108023005A (zh) | 发光二极管芯片的制造方法 | |
| CN108538995A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108400225A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108400204A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108400111A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108400112A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108305931A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 | |
| CN108538719A (zh) | 发光二极管芯片的制造方法和发光二极管芯片 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20171212 |
|
| WD01 | Invention patent application deemed withdrawn after publication |