CN107452854A - A kind of LED production technology - Google Patents
A kind of LED production technology Download PDFInfo
- Publication number
- CN107452854A CN107452854A CN201710700944.3A CN201710700944A CN107452854A CN 107452854 A CN107452854 A CN 107452854A CN 201710700944 A CN201710700944 A CN 201710700944A CN 107452854 A CN107452854 A CN 107452854A
- Authority
- CN
- China
- Prior art keywords
- led
- production technology
- elargol
- primer
- led chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
Abstract
The invention discloses a kind of LED production technology, the LED includes LED support, the multiple LED chips being fixed on the LED support, wire, the insulation glue frame for being arranged on the LED support and being located at LED chip periphery, the present invention fixes LED chip using elargol, is advantageous to LED chip radiating；And before coating fluorescent powder glue-line, one layer of primer is first sealed, it is tiled and covers LED chip, can both avoid breaking wire during dot fluorescent powder, make to isolate between phosphor powder layer and LED chip again, avoid direct contact with, be advantageous to slow down the aging of fluorescent material.
Description
Technical field
The invention belongs to LED technical field, and in particular to a kind of LED production technology.
Background technology
As the continuous progressive of society continues to develop with scientific and technical, people have also been fully recognized that environment is sent out the mankind
The importance of exhibition.Each state is all taking active and effective measure improvement environment, reduces pollution.Mostly important among these is also the most
The problem of urgent is exactly energy problem, fundamentally to solve energy problem, and except finding the new energy, energy-conservation is crucial
It is most directly effective important measures at present, in recent years, passes through effort, research and product development of the people in power-saving technology
On all achieve huge achievement.
Light emitting diode, abbreviation LED, it is a kind of semiconductor subassembly.It is at the beginning to be used as indicator lamp, display light emitting diode more
Plate etc.；With the appearance of white light LEDs, used also as illumination.LED is referred to as forth generation lighting source or green light source, has section
The features such as energy, environmental protection, long lifespan, small volume, it is widely used in various instructions, display, decoration, backlight, general lighting and city
The fields such as city's night scene.According to the difference using function, presentation of information, signal lamp, Vehicular lamp, liquid crystal display can be divided into
Backlight, the major class of general illumination five.
Energy-saving research data shows that, because LED is cold light source, semiconductor lighting itself does not have any pollution to environment,
Compared with incandescent lamp, fluorescent lamp, electric energy can reach more than 90%.Under same brightness, power consumption is only common incandescent
The 1/10 of lamp, the 1/2 of fluorescent tube.
At present, the LED of in the market, due to encapsulating material narrow space, manufacture craft is not fine enough, causes LED light-emitting areas
Uneven luminance, caloric value are big, weak heat-dissipating, luminous efficiency are low.Therefore, a kind of LED of energy-conservation is developed, is a weight of LED field
Want direction.
The content of the invention
It is an object of the invention to provide a kind of LED production technology, production efficiency is high, have light-emitting surface brightness uniformly,
The characteristics of caloric value is big, good heat dissipation, high luminous efficiency.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention is：
A kind of LED production technology, the LED include LED support, the multiple LED cores being fixed on the LED support
Piece, wire, it is arranged on the LED support and includes following positioned at the insulation glue frame of LED chip periphery, LED production technology
Step：
Step 1：In LED support surface point elargol substrate, LED chip is placed on elargol, drying fixes LED chip,
And hydrogen plasma cleaning is used, the thickness of the elargol substrate is 0.3~1.5mm；
Step 2：Conductive region on pad and LED support in LED chip is welded using metal wire；
Step 3：One layer of primer is sealed on LED support surface, primer is covered the LED chip, and is dried, at the bottom
The surface of glue is uniformly adhered to layer of fluorescent powder glue-line and dried；
Step 4：LED on LED support is cut into independent LED lamp bead junior unit, then carries out testing, sorting, is wrapped
Finished product is can be prepared by after dress.
Preferably, in step 3, fluorescent material glue-line is dried using microwave equipment, with 15~20min of microwave irradiation.
Preferably, the baking temperature of elargol is 145 DEG C~160 DEG C in step 1, and baking time is 55~70min.
Preferably, at 20~25 DEG C, relative humidity is controlled between 60%~65% for the welding temperature control.
Preferably, the fluorescent material is by nano silicon and nano aluminium oxide by weight 1.2~2.5:1 mixing system
Into.
Further, the baking process of primer is in the step 3：First respectively in temperature 45 C~55 DEG C, 55 DEG C~65
DEG C, 8~12min of each baking between 65 DEG C~75 DEG C；Then 20~40min is toasted between 140 DEG C~160 DEG C of temperature.
Preferably, the glue material that primer, elargol and fluorescent material glue-line use is transparent silica gel or epoxy resin.
Preferably, the metal wire is silver wire or copper cash.
The beneficial effects of the invention are as follows：
LED chip is fixed using elargol, is advantageous to LED chip radiating；And before coating fluorescent powder glue-line, first seal one
Layer primer, makes it tile and covers LED chip, can both avoid breaking wire during dot fluorescent powder, make phosphor powder layer and LED chip again
Between isolate, avoid direct contact with, be advantageous to slow down the aging of fluorescent material.
Embodiment
Embodiments of the invention are described in detail below, but what the present invention can be defined by the claims and cover
Multitude of different ways is implemented.
Embodiment 1
A kind of LED production technology, the LED include LED support, the multiple LED cores being fixed on the LED support
Piece, wire, it is arranged on the LED support and includes following positioned at the insulation glue frame of LED chip periphery, LED production technology
Step：
Step 1：In LED support surface point elargol substrate, LED chip is placed on elargol, drying fixes LED chip,
And hydrogen plasma cleaning is used, the thickness of the elargol substrate is 0.3mm, and the baking temperature of elargol is 145 DEG C, baking time
For 55min；
Step 2：Conductive region on pad and LED support in LED chip is welded using metal wire, welded
Temperature control is at 20 DEG C, and relative humidity is controlled between 60%, and metal wire is silver wire or copper cash；
Step 3：One layer of primer is sealed on LED support surface, primer is covered the LED chip, and is dried, at the bottom
The surface of glue is uniformly adhered to layer of fluorescent powder glue-line and dried, and fluorescent material glue-line is dried using microwave equipment, uses microwave irradiation
15min, fluorescent material is by nano silicon and nano aluminium oxide by weight 1.2:1 is mixed, and the baking process of primer is：
8min is first respectively toasted between temperature 45 C, 55 DEG C, 65 DEG C respectively；Then 20min is toasted between 140 DEG C of temperature；
Step 4：LED on LED support is cut into independent LED lamp bead junior unit, then carries out testing, sorting, is wrapped
Finished product is can be prepared by after dress.
The glue material that primer, elargol and fluorescent material glue-line use is transparent silica gel or epoxy resin.
Embodiment 2
A kind of LED production technology, the LED include LED support, the multiple LED cores being fixed on the LED support
Piece, wire, it is arranged on the LED support and includes following positioned at the insulation glue frame of LED chip periphery, LED production technology
Step：
Step 1：In LED support surface point elargol substrate, LED chip is placed on elargol, drying fixes LED chip,
And hydrogen plasma cleaning is used, the thickness of the elargol substrate is 1mm, and the baking temperature of elargol is 156 DEG C, and baking time is
65min；
Step 2：Conductive region on pad and LED support in LED chip is welded using metal wire, welded
Temperature control is at 23 DEG C, and relative humidity is controlled between 63%, and metal wire is silver wire or copper cash；
Step 3：One layer of primer is sealed on LED support surface, primer is covered the LED chip, and is dried, at the bottom
The surface of glue is uniformly adhered to layer of fluorescent powder glue-line and dried, and fluorescent material glue-line is dried using microwave equipment, uses microwave irradiation
18min, fluorescent material is by nano silicon and nano aluminium oxide by weight 2:1 is mixed, and the baking process of primer is：First
10min is respectively toasted between temperature 50 C, 60 DEG C, 70 DEG C respectively；Then 30min is toasted between 150 DEG C of temperature；
Step 4：LED on LED support is cut into independent LED lamp bead junior unit, then carries out testing, sorting, is wrapped
Finished product is can be prepared by after dress.
The glue material that primer, elargol and fluorescent material glue-line use is transparent silica gel or epoxy resin.
Embodiment 3
A kind of LED production technology, the LED include LED support, the multiple LED cores being fixed on the LED support
Piece, wire, it is arranged on the LED support and includes following positioned at the insulation glue frame of LED chip periphery, LED production technology
Step：
Step 1：In LED support surface point elargol substrate, LED chip is placed on elargol, drying fixes LED chip,
And hydrogen plasma cleaning is used, the thickness of the elargol substrate is 1.5mm, and the baking temperature of elargol is 160 DEG C, baking time
For 70min；
Step 2：Conductive region on pad and LED support in LED chip is welded using metal wire, welded
Temperature control is at 25 DEG C, and relative humidity is controlled between 65%, and metal wire is silver wire or copper cash；
Step 3：One layer of primer is sealed on LED support surface, primer is covered the LED chip, and is dried, at the bottom
The surface of glue is uniformly adhered to layer of fluorescent powder glue-line and dried, and fluorescent material glue-line is dried using microwave equipment, uses microwave irradiation
20min, fluorescent material is by nano silicon and nano aluminium oxide by weight 2.5:1 is mixed, and the baking process of primer is：
First each baking 12min between 55 DEG C, 65 DEG C, 75 DEG C of temperature respectively；Then 40min is toasted between 160 DEG C of temperature；
Step 4：LED on LED support is cut into independent LED lamp bead junior unit, then carries out testing, sorting, is wrapped
Finished product is can be prepared by after dress.
The glue material that primer, elargol and fluorescent material glue-line use is transparent silica gel or epoxy resin.
The embodiments of the present invention described above are not intended to limit the scope of the present invention, any in the present invention
Spirit and principle within the modifications, equivalent substitutions and improvements made etc., should be included in the claim protection model of the present invention
Within enclosing.
Claims (8)
1. a kind of LED production technology, the LED includes LED support, the multiple LED cores being fixed on the LED support
Piece, wire, it is arranged on the LED support and positioned at the insulation glue frame of LED chip periphery, it is characterised in that LED produces work
Skill comprises the following steps：
Step 1：In LED support surface point elargol substrate, and LED chip being placed on elargol, drying fixes LED chip, and
Using hydrogen plasma cleaning, the thickness of the elargol substrate is 0.3~1.5mm；
Step 2：Conductive region on pad and LED support in LED chip is welded using metal wire；
Step 3：One layer of primer is sealed on LED support surface, primer is covered the LED chip, and is dried, in the primer
Surface is uniformly adhered to layer of fluorescent powder glue-line and dried；
Step 4：LED on LED support is cut into independent LED lamp bead junior unit, then carries out testing, sorting, after packaging
It can be prepared by finished product.
2. a kind of LED production technology according to claim 1, it is characterised in that in step 3, fluorescent material glue-line is to make
Dried with microwave equipment, with 15~20min of microwave irradiation.
3. a kind of LED production technology according to claim 1, it is characterised in that the baking temperature of elargol is in step 1
145 DEG C~160 DEG C, baking time is 55~70min.
4. a kind of LED production technology according to claim 1, it is characterised in that the welding temperature control is 20~25
DEG C, relative humidity is controlled between 60%~65%.
5. a kind of LED production technology according to claim 1, it is characterised in that the fluorescent material is by nano silicon
With nano aluminium oxide by weight 1.2~2.5:1 is mixed.
A kind of 6. LED production technology according to claim 1, it is characterised in that the baking of primer in the step 3
Cheng Wei：8~12min is first respectively toasted between temperature 45 C~55 DEG C, 55 DEG C~65 DEG C, 65 DEG C~75 DEG C respectively；Then in temperature
20~40min is toasted between 140 DEG C~160 DEG C of degree.
7. a kind of LED production technology according to claim 1, it is characterised in that primer, elargol and fluorescent material glue-line use
Glue material be transparent silica gel or epoxy resin.
8. a kind of LED production technology according to claim 1, it is characterised in that the metal wire is silver wire or copper cash.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710700944.3A CN107452854A (en) | 2017-08-16 | 2017-08-16 | A kind of LED production technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710700944.3A CN107452854A (en) | 2017-08-16 | 2017-08-16 | A kind of LED production technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107452854A true CN107452854A (en) | 2017-12-08 |
Family
ID=60492495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710700944.3A Pending CN107452854A (en) | 2017-08-16 | 2017-08-16 | A kind of LED production technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107452854A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112432065A (en) * | 2020-11-26 | 2021-03-02 | 江西瑞晟光电科技有限公司 | LED lamp production process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101876406A (en) * | 2009-12-14 | 2010-11-03 | 东莞市光宇新能源科技有限公司 | Technique for manufacturing high-power light emitting diode (LED) lamp |
| CN102945910A (en) * | 2012-11-20 | 2013-02-27 | 湖南美星光电科技有限公司 | Manufacture method of mixed type saffron light-emitting diode (LED) |
| CN103022316A (en) * | 2012-12-04 | 2013-04-03 | 彩虹集团公司 | High-power light-emitting diode (LED) lamp and packaging method thereof |
-
2017
- 2017-08-16 CN CN201710700944.3A patent/CN107452854A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101876406A (en) * | 2009-12-14 | 2010-11-03 | 东莞市光宇新能源科技有限公司 | Technique for manufacturing high-power light emitting diode (LED) lamp |
| CN102945910A (en) * | 2012-11-20 | 2013-02-27 | 湖南美星光电科技有限公司 | Manufacture method of mixed type saffron light-emitting diode (LED) |
| CN103022316A (en) * | 2012-12-04 | 2013-04-03 | 彩虹集团公司 | High-power light-emitting diode (LED) lamp and packaging method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112432065A (en) * | 2020-11-26 | 2021-03-02 | 江西瑞晟光电科技有限公司 | LED lamp production process |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201539737U (en) | LED lamp | |
| WO2012009919A1 (en) | Led integrated packaging light source module | |
| WO2011150734A1 (en) | Led bulb with double-layer lampshade | |
| CN206163517U (en) | LED device of transparent surface alligatoring | |
| CN202058732U (en) | High-power LED (light-emitting diode) white light panel with separated chip and fluorescent powder | |
| CN206370440U (en) | A kind of LED filament and LED filament lamp | |
| WO2010115347A1 (en) | Led illumination lamp | |
| CN202100964U (en) | LED (light emitting diode) energy-saving lamp tube with wide spectrum | |
| TWM393643U (en) | LED device with coating structure | |
| CN107452854A (en) | A kind of LED production technology | |
| CN2911965Y (en) | White-light LED | |
| CN104253199A (en) | A LED package structure and a manufacture method thereof | |
| CN203286335U (en) | LED (light-emitting diode) panel lamp | |
| CN203406333U (en) | LED packaging structure | |
| CN110085730A (en) | Light emitting device package structure, quantum dot LED light source and electronic device | |
| CN201050705Y (en) | High light LED illuminator | |
| WO2011085568A1 (en) | Manufacturing method for integrally packaged high-power led illumination source and led illumination lamp | |
| CN202992710U (en) | Light-emitting diode (LED) illumination lamp | |
| CN105304792A (en) | Energy-saving LED manufacturing method | |
| CN208637457U (en) | A kind of high-power patch-type encapsulation LED crystal lamp | |
| CN207458998U (en) | A kind of encapsulating structure for improving G9 lamp bulb | |
| CN208090436U (en) | A kind of ultra-thin direct-injection type panel light | |
| CN201651897U (en) | Packaging integrated LED (Light-Emitting Diode) light source module | |
| CN205016556U (en) | Full period -luminosity LED light source with protective layer | |
| CN201651832U (en) | LED planar light-source type ball lamp |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171208 |
|
| RJ01 | Rejection of invention patent application after publication |