CN107431108B - 发光器件和发光器件封装 - Google Patents

发光器件和发光器件封装 Download PDF

Info

Publication number
CN107431108B
CN107431108B CN201680018542.9A CN201680018542A CN107431108B CN 107431108 B CN107431108 B CN 107431108B CN 201680018542 A CN201680018542 A CN 201680018542A CN 107431108 B CN107431108 B CN 107431108B
Authority
CN
China
Prior art keywords
electrode
bonding pad
thickness
light emitting
luminescent device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680018542.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN107431108A (zh
Inventor
李尚烈
金会准
丁星好
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN107431108A publication Critical patent/CN107431108A/zh
Application granted granted Critical
Publication of CN107431108B publication Critical patent/CN107431108B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
CN201680018542.9A 2015-03-26 2016-03-16 发光器件和发光器件封装 Active CN107431108B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR10-2015-0042676 2015-03-26
KR1020150042676A KR101646666B1 (ko) 2015-03-26 2015-03-26 발광 소자, 이 소자를 포함하는 발광 소자 패키지, 및 이 패키지를 포함하는 조명 장치
PCT/KR2016/002637 WO2016153214A1 (ko) 2015-03-26 2016-03-16 발광 소자 및 발광 소자 패키지

Publications (2)

Publication Number Publication Date
CN107431108A CN107431108A (zh) 2017-12-01
CN107431108B true CN107431108B (zh) 2019-11-08

Family

ID=56712101

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680018542.9A Active CN107431108B (zh) 2015-03-26 2016-03-16 发光器件和发光器件封装

Country Status (6)

Country Link
US (1) US10418523B2 (enExample)
EP (1) EP3276678A4 (enExample)
JP (1) JP6796078B2 (enExample)
KR (1) KR101646666B1 (enExample)
CN (1) CN107431108B (enExample)
WO (1) WO2016153214A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102471670B1 (ko) * 2016-02-11 2022-11-29 서울바이오시스 주식회사 고출력 발광 다이오드 및 그것을 갖는 발광 모듈
CA3032521A1 (en) * 2016-08-22 2018-03-01 Aldeyra Therapeutics, Inc. Aldehyde trapping compounds and uses thereof
US20180198029A1 (en) * 2017-01-09 2018-07-12 Glo Ab Semiconductor light emitting device including reflective element and method of making same
KR102621918B1 (ko) * 2019-01-25 2024-01-05 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102627863B1 (ko) * 2019-01-25 2024-01-22 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
US11935982B2 (en) * 2020-04-22 2024-03-19 Osram Opto Semiconductors Gmbh Semiconductor structure arrangement, methods for producing a semiconductor structure arrangement and optoelectronic device
CN111525014B (zh) 2020-04-27 2021-10-12 开发晶照明（厦门）有限公司 固态发光器件
CN111525009B (zh) * 2020-04-27 2022-02-22 开发晶照明（厦门）有限公司 半导体发光器件
KR20230056365A (ko) 2021-10-20 2023-04-27 주식회사 레다즈 실리콘 기반의 렌즈 형성 방법 및 이를 적용한 백라이트 유닛
KR102509964B1 (ko) 2022-05-10 2023-03-14 주식회사 레다즈 백라이트 유닛 바

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1738066A (zh) * 2005-07-29 2006-02-22 东莞市福地电子材料有限公司 氮化镓基发光二极管芯片及其制造方法
CN101241963A (zh) * 2007-12-12 2008-08-13 厦门三安电子有限公司 一种基于复合式低阻缓冲结构的薄膜led芯片器件及其制造方法
CN104300069A (zh) * 2014-08-25 2015-01-21 大连德豪光电科技有限公司 高压led芯片及其制备方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2786952B2 (ja) * 1991-02-27 1998-08-13 株式会社豊田中央研究所 窒化ガリウム系化合物半導体発光素子およびその製造方法
JPH0846237A (ja) 1994-07-27 1996-02-16 Nippon Telegr & Teleph Corp <Ntt> シリコン発光ダイオード
US5955759A (en) 1997-12-11 1999-09-21 International Business Machines Corporation Reduced parasitic resistance and capacitance field effect transistor
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
JP2007049045A (ja) 2005-08-11 2007-02-22 Rohm Co Ltd 半導体発光素子およびこれを備えた半導体装置
JP5082504B2 (ja) 2006-03-31 2012-11-28 日亜化学工業株式会社 発光素子及び発光素子の製造方法
JP5349260B2 (ja) * 2009-11-19 2013-11-20 株式会社東芝 半導体発光装置及びその製造方法
KR20110135103A (ko) * 2010-06-10 2011-12-16 에스티에스반도체통신 주식회사 반도체 발광 소자 및 그 제조 방법
CN102456793A (zh) * 2010-10-25 2012-05-16 佛山市奇明光电有限公司 发光二极管元件及其制造方法
JP4989773B1 (ja) * 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
KR101824034B1 (ko) * 2011-05-24 2018-01-31 엘지이노텍 주식회사 발광 소자 패키지
CN202094166U (zh) * 2011-06-03 2011-12-28 广东银雨芯片半导体有限公司 一种具有反射型电流阻挡层的led芯片
CN103975451B (zh) * 2012-07-18 2016-10-12 世迈克琉明有限公司 制造半导体发光器件的方法
JP5915504B2 (ja) * 2012-11-06 2016-05-11 日亜化学工業株式会社 半導体発光素子
KR20140062945A (ko) * 2012-11-15 2014-05-27 엘지이노텍 주식회사 발광소자
KR101478761B1 (ko) * 2013-05-15 2015-01-02 주식회사 세미콘라이트 반도체 발광소자
CN103367618B (zh) * 2013-07-19 2016-04-13 深圳大道半导体有限公司 带光反射层的半导体发光芯片
KR101546929B1 (ko) * 2013-09-24 2015-08-25 서울바이오시스 주식회사 발광 다이오드 및 그것을 갖는 발광 다이오드 모듈
US9748446B2 (en) * 2013-10-11 2017-08-29 Semicon Light Co., Ltd. Semiconductor light emitting device
JP6299336B2 (ja) * 2014-03-28 2018-03-28 日亜化学工業株式会社 発光素子及びそれを用いた発光装置
KR102162437B1 (ko) * 2014-05-15 2020-10-07 엘지이노텍 주식회사 발광 소자 및 이를 포함하는 발광 소자 패키지

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1738066A (zh) * 2005-07-29 2006-02-22 东莞市福地电子材料有限公司 氮化镓基发光二极管芯片及其制造方法
CN101241963A (zh) * 2007-12-12 2008-08-13 厦门三安电子有限公司 一种基于复合式低阻缓冲结构的薄膜led芯片器件及其制造方法
CN104300069A (zh) * 2014-08-25 2015-01-21 大连德豪光电科技有限公司 高压led芯片及其制备方法

Also Published As

Publication number Publication date
KR101646666B1 (ko) 2016-08-08
CN107431108A (zh) 2017-12-01
US20180122991A1 (en) 2018-05-03
JP2018509770A (ja) 2018-04-05
US10418523B2 (en) 2019-09-17
EP3276678A1 (en) 2018-01-31
EP3276678A4 (en) 2018-11-21
WO2016153214A1 (ko) 2016-09-29
JP6796078B2 (ja) 2020-12-02

Similar Documents

Publication Publication Date Title
US10651345B2 (en) Light emitting device, light emitting device package including the device, and lighting apparatus including the package
CN107431108B (zh) 发光器件和发光器件封装
KR102434778B1 (ko) 발광 소자 패키지
KR102402260B1 (ko) 발광 소자 패키지
CN105932134B (zh) 发光器件封装和包括该发光器件封装的照明设备
CN105529387A (zh) 发光器件封装及包括该封装的照明装置
KR102569249B1 (ko) 발광 소자 패키지
CN105552189A (zh) 发光器件封装和包括该封装的发光设备
KR102137750B1 (ko) 발광 소자
KR102408617B1 (ko) 발광 소자 패키지 및 이를 포함하는 발광 장치
KR102464028B1 (ko) 발광 소자 패키지 및 이를 포함하는 발광 장치
KR20160084992A (ko) 발광 소자
KR102320866B1 (ko) 발광 소자 및 발광 소자 패키지
KR102455091B1 (ko) 발광 소자 및 이를 포함하는 발광 소자 패키지
KR102087948B1 (ko) 발광 소자 패키지
KR102326926B1 (ko) 발광 소자 및 발광 소자 패키지
US10593848B2 (en) Light emitting device package and light emitting apparatus
KR20160036293A (ko) 발광 소자 패키지

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210810

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

CP03 Change of name, title or address
CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China