CN107424784B - 变压器和电路 - Google Patents
变压器和电路 Download PDFInfo
- Publication number
- CN107424784B CN107424784B CN201611216432.1A CN201611216432A CN107424784B CN 107424784 B CN107424784 B CN 107424784B CN 201611216432 A CN201611216432 A CN 201611216432A CN 107424784 B CN107424784 B CN 107424784B
- Authority
- CN
- China
- Prior art keywords
- turns
- transformer
- primary turns
- primary
- circle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000004804 winding Methods 0.000 description 54
- 230000008878 coupling Effects 0.000 description 23
- 238000010168 coupling process Methods 0.000 description 23
- 238000005859 coupling reaction Methods 0.000 description 23
- 239000003990 capacitor Substances 0.000 description 16
- 239000002184 metal Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000003447 ipsilateral effect Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
- H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
- H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45188—Non-folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
- H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
- H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
- H03F3/45641—Measuring at the loading circuit of the differential amplifier
- H03F3/45659—Controlling the loading circuit of the differential amplifier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
- H01F2027/2809—Printed windings on stacked layers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/09—A balun, i.e. balanced to or from unbalanced converter, being present at the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/411—Indexing scheme relating to amplifiers the output amplifying stage of an amplifier comprising two power stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/541—Transformer coupled at the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/45—Indexing scheme relating to differential amplifiers
- H03F2203/45631—Indexing scheme relating to differential amplifiers the LC comprising one or more capacitors, e.g. coupling capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Coils Or Transformers For Communication (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013101768.1 | 2013-02-22 | ||
DE102013101768.1A DE102013101768A1 (de) | 2013-02-22 | 2013-02-22 | Transformator und elektrische Schaltung |
CN201410059122.8A CN104008864B (zh) | 2013-02-22 | 2014-02-21 | 变压器和电路 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410059122.8A Division CN104008864B (zh) | 2013-02-22 | 2014-02-21 | 变压器和电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107424784A CN107424784A (zh) | 2017-12-01 |
CN107424784B true CN107424784B (zh) | 2019-11-19 |
Family
ID=51349312
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410059122.8A Active CN104008864B (zh) | 2013-02-22 | 2014-02-21 | 变压器和电路 |
CN201611216432.1A Active CN107424784B (zh) | 2013-02-22 | 2014-02-21 | 变压器和电路 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410059122.8A Active CN104008864B (zh) | 2013-02-22 | 2014-02-21 | 变压器和电路 |
Country Status (5)
Country | Link |
---|---|
US (2) | US9837199B2 (zh) |
KR (1) | KR101547997B1 (zh) |
CN (2) | CN104008864B (zh) |
DE (1) | DE102013101768A1 (zh) |
TW (2) | TWI682410B (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013101768A1 (de) * | 2013-02-22 | 2014-08-28 | Intel Mobile Communications GmbH | Transformator und elektrische Schaltung |
US20160284461A1 (en) * | 2015-03-28 | 2016-09-29 | Intel IP Corporation | Tuning inductance ratio of a passive device |
WO2016202370A1 (en) * | 2015-06-17 | 2016-12-22 | Huawei Technologies Co., Ltd. | A radio frequency transformer for transforming an input radio frequency signal into an output radio frequency signal |
EP3276827B1 (en) | 2016-07-25 | 2021-04-28 | Comet AG | Broadband matching network |
US10038413B2 (en) * | 2016-12-13 | 2018-07-31 | Globalfoundries Inc. | Fully depleted silicon on insulator power amplifier |
CN108574471B (zh) * | 2017-03-14 | 2021-11-23 | 珠海全志科技股份有限公司 | 用于射频功率放大电路的全集成谐波滤波器 |
US10826457B2 (en) * | 2018-02-07 | 2020-11-03 | Swiftlink Technologies Inc. | Broadband power amplifier and matching network for multi-band millimeter-wave 5G communication |
EP4290575A3 (en) | 2018-03-30 | 2024-03-06 | INTEL Corporation | On-chip multi-layer transformer and inductor |
US10476533B1 (en) * | 2018-04-27 | 2019-11-12 | Speedlink Technology Inc. | Transmit and receive switch and broadband power amplifier matching network for multi-band millimeter-wave 5G communication |
US11742130B2 (en) | 2019-06-24 | 2023-08-29 | Nxp B.V. | High current integrated circuit-based transformer |
WO2021139866A1 (ru) * | 2020-01-06 | 2021-07-15 | Кирилл ЧИКЕЮК | Резонансный вращающийся трансформатор |
CN112462170B (zh) * | 2020-11-06 | 2021-11-19 | 北京航空航天大学 | 一种用于无线充电线圈测试的平衡-不平衡转换电路 |
KR20230087930A (ko) | 2021-12-10 | 2023-06-19 | 충남대학교산학협력단 | 차동 신호 생성 회로 |
CN116566329A (zh) * | 2022-01-27 | 2023-08-08 | 锐石创芯(深圳)科技股份有限公司 | 巴伦、射频前端芯片和射频前端模组 |
WO2023178494A1 (zh) * | 2022-03-21 | 2023-09-28 | 华为技术有限公司 | 变压器及其工作方法、射频芯片、电子设备 |
Citations (6)
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WO2001022444A1 (de) * | 1999-09-17 | 2001-03-29 | Infineon Technologies Ag | Monolithisch integrierter transformator |
US6683510B1 (en) * | 2002-08-08 | 2004-01-27 | Northrop Grumman Corporation | Ultra-wideband planar coupled spiral balun |
CN101142639A (zh) * | 2005-04-08 | 2008-03-12 | 国际商业机器公司 | 用于芯片上毫米波应用的集成电路变压器器件 |
US7456721B2 (en) * | 2006-08-16 | 2008-11-25 | Realtek Semiconductor Corp. | On-chip transformer balun |
US7570144B2 (en) * | 2007-05-18 | 2009-08-04 | Chartered Semiconductor Manufacturing, Ltd. | Integrated transformer and method of fabrication thereof |
CN102195575A (zh) * | 2010-03-12 | 2011-09-21 | 三星电机株式会社 | 功率放大器系统 |
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JPH0614447Y2 (ja) | 1990-09-25 | 1994-04-13 | 日立精工株式会社 | 溶接用高周波変圧器 |
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DE102013101768A1 (de) * | 2013-02-22 | 2014-08-28 | Intel Mobile Communications GmbH | Transformator und elektrische Schaltung |
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-
2013
- 2013-02-22 DE DE102013101768.1A patent/DE102013101768A1/de active Pending
-
2014
- 2014-02-12 TW TW105132571A patent/TWI682410B/zh active
- 2014-02-12 TW TW103104594A patent/TWI590268B/zh active
- 2014-02-19 US US14/183,618 patent/US9837199B2/en active Active
- 2014-02-20 KR KR1020140019378A patent/KR101547997B1/ko active IP Right Grant
- 2014-02-21 CN CN201410059122.8A patent/CN104008864B/zh active Active
- 2014-02-21 CN CN201611216432.1A patent/CN107424784B/zh active Active
-
2016
- 2016-02-10 US US15/019,980 patent/US20160181005A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001022444A1 (de) * | 1999-09-17 | 2001-03-29 | Infineon Technologies Ag | Monolithisch integrierter transformator |
US6683510B1 (en) * | 2002-08-08 | 2004-01-27 | Northrop Grumman Corporation | Ultra-wideband planar coupled spiral balun |
CN101142639A (zh) * | 2005-04-08 | 2008-03-12 | 国际商业机器公司 | 用于芯片上毫米波应用的集成电路变压器器件 |
US7456721B2 (en) * | 2006-08-16 | 2008-11-25 | Realtek Semiconductor Corp. | On-chip transformer balun |
US7570144B2 (en) * | 2007-05-18 | 2009-08-04 | Chartered Semiconductor Manufacturing, Ltd. | Integrated transformer and method of fabrication thereof |
CN102195575A (zh) * | 2010-03-12 | 2011-09-21 | 三星电机株式会社 | 功率放大器系统 |
Also Published As
Publication number | Publication date |
---|---|
US20140240063A1 (en) | 2014-08-28 |
US20160181005A1 (en) | 2016-06-23 |
TW201505046A (zh) | 2015-02-01 |
KR20140105395A (ko) | 2014-09-01 |
CN104008864B (zh) | 2017-04-19 |
CN107424784A (zh) | 2017-12-01 |
KR101547997B1 (ko) | 2015-08-27 |
TWI682410B (zh) | 2020-01-11 |
TW201719693A (zh) | 2017-06-01 |
US9837199B2 (en) | 2017-12-05 |
CN104008864A (zh) | 2014-08-27 |
TWI590268B (zh) | 2017-07-01 |
DE102013101768A1 (de) | 2014-08-28 |
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PB01 | Publication | ||
PB01 | Publication | ||
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GR01 | Patent grant | ||
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Effective date of registration: 20200716 Address after: California, USA Patentee after: INTEL Corp. Address before: Noiberg, Germany Patentee before: Intel Mobile Communications GmbH Effective date of registration: 20200716 Address after: California, USA Patentee after: Apple Inc. Address before: California, USA Patentee before: INTEL Corp. |