CN107406973A - 用于提高热输出的带有特别设计的真空腔 - Google Patents

用于提高热输出的带有特别设计的真空腔 Download PDF

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CN107406973A
CN107406973A CN201680007066.0A CN201680007066A CN107406973A CN 107406973 A CN107406973 A CN 107406973A CN 201680007066 A CN201680007066 A CN 201680007066A CN 107406973 A CN107406973 A CN 107406973A
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vacuum chamber
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S·克拉斯尼特泽
M·埃斯塞巴奇
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Ou Ruikang Surface Solutions Inc
Oerlikon Surface Solutions AG Pfaeffikon
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    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H—ELECTRICITY
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation

Abstract

本发明涉及一种用于处理基底的真空腔，其至少包括如下元件：用于将热量输入到真空腔的在其中可处理至少一种基底(10)的处理区域中的热输入区域；腔壁(20)，通过其可将热量从处理区域中输出，腔壁包括内部和外部的腔壁侧；以及遮蔽壁(30)，其如此布置在腔壁(20)与处理区域之间，即在处理区域方面，相对于内部的腔壁侧安置有背对的遮蔽壁侧，其特征在于，相对于内部的腔壁侧安置的遮蔽壁侧至少部分、优选地绝大部分设有第一层(31)，其具有ε≥0.65的辐射系数。

Description

用于提高热输出的带有特别设计的真空腔
技术领域
本发明涉及一种用于提高热输出的带有特别的设计的真空腔和涂层设备。
背景技术
传统的涂层设备通常设计成，使得可在涂层腔或接收器中达到或保持预定的涂层温度。涂层腔内部中的表面常常由有光泽的或发光的不锈钢或铝构成。因为在执行涂层过程期间，涂层腔的内壁可被非期望地涂层，因此通常使用遮蔽部(英文Shielding)，以便避免将较厚的层构建在内壁上。当应在没有维护的情况下相继执行多个涂层过程且因此相叠累积多个层并且这在涂层期间和在涂层之后导致剥离时，使用这样的遮蔽部是特别有帮助的。这样的遮蔽腔常常也由光泽的或发光不锈钢或铝制成。该设计普遍均匀地应用在整个接收器中或者沿着套面、盖面和底面应用。
涂层源、加热元件和冷却元件一般作为单个部件如此分布在涂层腔的内部中，使得一些内表面或内腔壁面保持没有源和/或元件。因此，该“自由的”表面作为热输出元件或以类似的方式例如冷却元件来起作用。
通常，尤其当不仅热隔离涂层腔的盖面而且热隔离涂层腔的底面时，在鉴于涂层温度调整设备的工作点的情况中，通过例如加热装置和涂层源的热输入与通过涂层腔的套面的热输出之间的比例扮演着决定性的角色。热隔离盖面与底面导致在涂层高度上的均匀的温度分布，即使在例如没有温度调节的情况下运行加热装置。
在准备好启动涂层过程的情况下应达到确定的涂层温度，也就是说达到待涂层的基底表面的确定的温度。对于热输入而言，常常将加热元件布置到腔壁面上使得这些热面将热量辐射到基底上至少直至启动涂层过程。
在涂层过程开始之后且在执行涂层过程期间通过运行涂层源来提供附加的热输入，当大量电弧雾化源(Lichtbogenverdampfungsquellen)以高电弧电流运行时，该附加的热输入可尤其地高。
如果希望以确定的涂层来在涂层设备中涂层基底，但在此希望更高的涂层率，可例如通过使用更大量的涂层源来实现该目的。然而在该情况中必须考虑到当没有相应地匹配或提高热输出时进入到涂层腔中的热输入的相应的提高，这直接引起涂层温度的提高。当使用电弧雾化源时，该问题尤其突出。
发明内容
本发明所基于的目的是提供一种解决方案，其使得如此调节在涂层腔中的热输出成为可能，即使得涂层温度由于热输入的提高不会不受控制的升高，而是可保持在期望的工作点中。
根据本发明的解决方案：
该目的根据本发明由此来实现，即提供根据权利要求1至10的真空腔并且提供根据权利要求11至14的涂层设备。
附图说明
为了更好地理解本发明，参照附图中的图1和图2：
图1显示了根据本发明的真空腔的基本元件的组件的示意图。
图2显示了待处理的基底的温度曲线，其分别在非本发明的真空腔中(虚线)和根据本发明的真空腔中(实线)被处理。
具体实施方式
本发明本质上公开了一种用于处理基底的真空腔，其至少包括以下元件：
-热输入元件，其用于将热量输入到真空腔的在其中可处理至少一种基底10的处理区域中，
-腔壁20，通过其可将热量从处理区域中输出，腔壁包括内部的和外部的腔壁侧，以及
-遮蔽壁30，其如此布置在腔壁20与处理区域之间，即，在处理区域方面，相对于内部的腔壁侧安置有背对的遮蔽壁侧，
且其特征在于，
-相对于内部的腔壁侧安置的遮蔽壁侧至少部分、优选地绝大部分地设有第一层31，其具有ε≥0.65的辐射系数。
根据本发明的一优选的实施形式，内部的腔壁侧也至少部分、优选地至少绝大部分地设有第二层21，其具有ε≥0.65的辐射系数。
根据本发明的另一优选的实施形式，腔壁20包括集成的冷却系统15。
第一层31的辐射系数优选地大于等于0.80，进一步优选地大于等于0.90。
第二层21的辐射系数同样优选地大于等于0.80，进一步优选地大于等于0.90。
通常，发明人确定从ε≥0.8起热量输出的显著提高，尤其从ε≥0.9起。ε进一步优选地接近1。
根据本发明的进一步优选的实施形式，第一层31和/或第二层21至少部分借助于PVD方法和/或PACVD方法来分离(PVD：物理气相淀积(Physical Vapor Deposition)；PACVD：等离子辅助的化学气相淀积(Plasma assisted chemical vapor deposition))。
根据本发明的进一步优选的实施形式，第一层(31)和/或第二层21包括铝和/或钛。
第一层31和/或第二层21同样优选地包括氮和/或氧。
发明人还确定的是，包括氮化钛铝或氮化铝钛或由氮化钛铝或氮化铝钛构成的层在本发明的上下文中非常良好地适合用作第一层31和/或第二层21。
包括氧化铝或由氧化铝构成的层在本发明的上下文中也可良好地适合用作第一层31和/或第二层21。
本发明同样公开了一种带有如以上所述的根据本发明的真空腔来作为涂层腔的涂层设备。
根据本发明的涂层设备的一优选的实施形式，涂层腔构建成PVD涂层腔。
优选地在PVD涂层腔中执行PVD过程期间设置有用于减少或避免内部的腔壁侧被涂层的遮蔽壁(30)。
优选地不仅PVD涂层腔的盖面而且其底面被热隔离，以便于实现在整个涂层高度上(或在处理区域的整个高度上)的均匀的温度分布。
优选地，(多个)腔壁20未设有功能元件，例如涂层元件、等离子处理元件或加热元件。
根据需求，在其处优选地不布置这样的功能元件的所有腔壁20均可在内腔壁侧中设有第二层21并且配备带有根据本发明的第一层31的遮蔽壁30。
同样可有利的是，当应实现进一步提高的热输出时，所有这些腔壁20配备有集成的冷却系统15。
如以上已阐述，图2显示了在相同的真空腔中基底温度的曲线的对比，其中，一个针对根据本发明的示例：遮蔽壁30和腔壁20如上所述根据本发明设有相应的第一层31和第二层21(实线)，而另一个针对非本发明的示例：相同的真空腔组件，但没有使用层31和21(虚线)。两种示例在相同的到涂层腔中的热输入的情况下执行。
对于上述根据本发明的示例而言，将带有大约0.9的辐射系数ε的PVD分离的氮化钛铝层不仅用作第一层31而且用作第二层21。
根据本发明的一优选的实施形式，所有被遮蔽的腔壁的内侧可至少绝大部分被涂层以相应的第二层21，而所有遮蔽壁的与腔壁相对而置的侧可至少绝大部分被涂层以相应的第一层31。
不仅根据本发明的层21而且根据本发明的层31应由真空合适的材料构成。然而同样重要的是，这些材料不具有磁性，以便于在涂层的情况中避免过程干扰。
优选地，层21和/或层31具有以下特征中的至少一个：
-层厚不大于50μm，
-紧密的层结构，从而尽可能不出现穿过层的除气，
-相对支承材料的良好附着，由此可确保良好的热传递，
-良好的温度稳定性，这允许可在更高的温度、优选地直至至少600℃的情况下执行涂层过程。
良好的抗磨损性，从而不会在“粗糙的制造坏境”中快速磨耗这些层。
优选地借助于PVD技术使层21和/或31分离，使得其例如在相同的涂层腔中可被涂覆到相应的腔壁和遮蔽壁侧上。在该情况中，可例如在涂层过程中首先在没有遮蔽壁的情况下利用层21涂层内壁的腔壁。然而紧接着相反地可将遮蔽壁放置在涂层腔中，从而可利用层31来涂层之后位于内部的腔壁侧对面的期望的遮蔽壁侧。层21和31的一次涂覆足以多次驱动带有根据本发明配备的涂层腔的涂层设备。
为了在根据本发明的涂层腔中执行PVD涂层过程来涂层基底，遮蔽壁在涂层设备中布置成，使得内部的腔壁或腔壁的内侧被遮蔽，以便于减少或避免这些壁的非期望的涂层。以该方式在涂层基底期间基本上仅仅还一同涂层不带有层31的遮蔽壁侧。相应地，不仅涂覆的层31而且涂覆的层21在每个涂层过程之后保持完整。

Claims (14)

1.一种用于处理基底的真空腔，其至少包括如下元件：
-热输入元件，其用于将热量输入到所述真空腔的在其中能处理至少一种基底(10)的处理区域中，
-腔壁(20)，通过其能将所述热量从所述处理区域中输出，所述腔壁包括内部和外部的腔壁侧，以及
-遮蔽壁(30)，其如此布置在所述腔壁(20)与所述处理区域之间，即在所述处理区域方面，相对于所述内部的腔壁侧安置有背对的遮蔽壁侧，
其特征在于，相对于所述内部腔壁侧安置的所述遮蔽壁侧至少部分、优选地绝大部分设有第一层(31)，其具有ε≥0.65的辐射系数。
2.根据权利要求1的真空腔，其特征在于，所述内部的腔壁侧至少部分、优选地至少绝大部分设有第二层(21)，其具有ε≥0.65的辐射系数。
3.根据前述权利要求中任一项所述的真空腔，其特征在于，所述腔壁(20)包括集成的冷却系统(15)。
4.根据前述权利要求中任一项所述的真空腔，其特征在于，所述第一层(31)的辐射系数大于等于0.80、优选地大于等于0.90。
5.根据前述权利要求中任一项所述的真空腔，其特征在于，所述第二层(21)的辐射系数大于等于0.80、优选地大于等于0.90。
6.根据前述权利要求中任一项所述的真空腔，其特征在于，所述第一层(31)和/或所述第二层(21)至少部分借助于PVD方法和/或PA-CVD-方法来分离。
7.根据前述权利要求中任一项所述的真空腔，其特征在于，所述第一层(31)和/或所述第二层(21)包括铝和/或钛。
8.根据前述权利要求中任一项所述的真空腔，其特征在于，所述第一层(31)和/或所述第二层(31)包括氮和/或氧。
9.根据权利要求7所述的真空腔，其特征在于，所述第一层(31)和/或所述第二层(21)包括氮化钛铝或氮化铝钛。
10.根据权利要求8或9所述的真空腔，其特征在于，所述第一层(31)和/或第二层(31)包括氧化铝。
11.带有根据前述权利要求中任一项所述的真空腔来作为涂层腔的涂层设备。
12.根据权利要求11所述的涂层设备，其特征在于，所述涂层腔构建成PVD涂层腔。
13.根据权利要求12所述的涂层设备，其特征在于，所述遮蔽壁(30)设置用于减少或避免在所述PVD涂层腔中执行PVD过程期间所述内部腔壁侧的涂层。
14.根据前述权利要求12至13中任一项所述的涂层设备，其特征在于，所述PVD涂层腔的盖面和底面被热隔离。
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Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
EP3247818A1 (de) * 2015-01-19 2017-11-29 Oerlikon Surface Solutions AG, Pfäffikon Beschichtungskammer zur durchführung eines vakuum gestützten beschichtungsverfahrens, wärmeschild, sowie beschichtungsverfahren
EP3662094B1 (en) 2017-08-02 2021-11-17 Oerlikon Surface Solutions AG, Pfäffikon Coating device for conducting high efficient low temperature coating
DE102017222624A1 (de) * 2017-12-13 2019-06-13 SKF Aerospace France S.A.S Beschichtete Lagerkomponente und Lager mit einer solchen Komponente
US11810766B2 (en) * 2018-07-05 2023-11-07 Applied Materials, Inc. Protection of aluminum process chamber components
US11923178B2 (en) * 2018-11-16 2024-03-05 Ulvac, Inc. Vacuum processing apparatus
KR102050786B1 (ko) * 2019-01-21 2019-12-03 주식회사 와인 화학 기상 증착용 챔버
JP7223738B2 (ja) * 2020-11-12 2023-02-16 株式会社アルバック スパッタリング装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
EP2330232A1 (en) * 2009-12-02 2011-06-08 Woongjin polysilicon Co., Ltd. CVD reactor with energy efficient thermal-radiation shield
JP2015000994A (ja) * 2013-06-13 2015-01-05 株式会社アルバック 真空処理装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117855U (ja) * 1984-01-20 1985-08-09 株式会社リコー 真空蒸着装置の加熱源
DE3930832A1 (de) * 1989-09-15 1991-03-28 Nishibori Mineo Vorrichtung und verfahren zum beschichten von werkstuecken mittels bogenentladung
US5518593A (en) * 1994-04-29 1996-05-21 Applied Komatsu Technology, Inc. Shield configuration for vacuum chamber
US6120660A (en) * 1998-02-11 2000-09-19 Silicon Genesis Corporation Removable liner design for plasma immersion ion implantation
US20040206804A1 (en) * 2002-07-16 2004-10-21 Jaeyeon Kim Traps for particle entrapment in deposition chambers
US20050147742A1 (en) * 2004-01-07 2005-07-07 Tokyo Electron Limited Processing chamber components, particularly chamber shields, and method of controlling temperature thereof
KR102134276B1 (ko) * 2008-04-16 2020-07-15 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
DE102010045314B4 (de) * 2010-09-14 2021-05-27 Bayerische Motoren Werke Aktiengesellschaft Thermisches Beschichtungsverfahren
CN103383155A (zh) * 2013-06-21 2013-11-06 中国科学院上海技术物理研究所 Ti合金氮化物选择性吸收膜系及其制备方法
EP3247818A1 (de) * 2015-01-19 2017-11-29 Oerlikon Surface Solutions AG, Pfäffikon Beschichtungskammer zur durchführung eines vakuum gestützten beschichtungsverfahrens, wärmeschild, sowie beschichtungsverfahren

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6046439A (en) * 1996-06-17 2000-04-04 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
EP2330232A1 (en) * 2009-12-02 2011-06-08 Woongjin polysilicon Co., Ltd. CVD reactor with energy efficient thermal-radiation shield
JP2015000994A (ja) * 2013-06-13 2015-01-05 株式会社アルバック 真空処理装置

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