CN107406250B - 微机电电容式传感器结构和装置 - Google Patents

微机电电容式传感器结构和装置 Download PDF

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Publication number
CN107406250B
CN107406250B CN201680014405.8A CN201680014405A CN107406250B CN 107406250 B CN107406250 B CN 107406250B CN 201680014405 A CN201680014405 A CN 201680014405A CN 107406250 B CN107406250 B CN 107406250B
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stator
protrusion
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Chinese (zh)
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CN107406250A (zh
Inventor
马蒂·柳库
亚科·罗希奥
汉努·韦斯泰里宁
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/004—Angular deflection
    • B81B3/0045—Improve properties related to angular swinging, e.g. control resonance frequency
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
    • B81B3/0056—Adjusting the distance between two elements, at least one of them being movable, e.g. air-gap tuning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/04—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of effective area of electrode
    • H01G5/14—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of effective area of electrode due to longitudinal movement of electrodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0221—Variable capacitors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0271—Resonators; ultrasonic resonators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/06—Devices comprising elements which are movable in relation to each other, e.g. slidable or rotatable
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
    • G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
    • G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
CN201680014405.8A 2015-03-09 2016-03-07 微机电电容式传感器结构和装置 Active CN107406250B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FI20155153A FI127229B (en) 2015-03-09 2015-03-09 Microelectromechanical structure and device
FI20155153 2015-03-09
PCT/IB2016/051265 WO2016142832A1 (en) 2015-03-09 2016-03-07 A microelectromechanical capacitive sensor structure and device

Publications (2)

Publication Number Publication Date
CN107406250A CN107406250A (zh) 2017-11-28
CN107406250B true CN107406250B (zh) 2019-10-01

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CN201680014405.8A Active CN107406250B (zh) 2015-03-09 2016-03-07 微机电电容式传感器结构和装置

Country Status (7)

Country Link
US (1) US9969606B2 (enExample)
EP (1) EP3268305B1 (enExample)
JP (1) JP6627883B2 (enExample)
CN (1) CN107406250B (enExample)
FI (1) FI127229B (enExample)
TW (1) TWI619668B (enExample)
WO (1) WO2016142832A1 (enExample)

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DE102017217009B3 (de) * 2017-09-26 2018-07-19 Robert Bosch Gmbh MEMS-Vorrichtung sowie entsprechendes Betriebsverfahren
JP7056099B2 (ja) * 2017-11-28 2022-04-19 セイコーエプソン株式会社 物理量センサー、物理量センサーデバイス、複合センサーデバイス、慣性計測装置、移動体測位装置、携帯型電子機器、電子機器および移動体
US10712359B2 (en) * 2018-05-01 2020-07-14 Nxp Usa, Inc. Flexure with enhanced torsional stiffness and MEMS device incorporating same
US10794701B2 (en) 2018-05-01 2020-10-06 Nxp Usa, Inc. Inertial sensor with single proof mass and multiple sense axis capability
CN109490576A (zh) * 2018-12-19 2019-03-19 成都力创云科技有限公司 一种基于soi的全差分电容式mems加速度计
CN112014595B (zh) * 2019-05-30 2022-10-28 武汉杰开科技有限公司 加速度计及其制作方法
CN112014596B (zh) * 2019-05-30 2022-10-28 武汉杰开科技有限公司 加速度计及其制作方法
WO2021178464A1 (en) * 2020-03-03 2021-09-10 Inficon, Inc. System and method for monitoring semiconductor processes
US11703521B2 (en) * 2020-12-04 2023-07-18 Honeywell International Inc. MEMS vibrating beam accelerometer with built-in test actuators
JP7389767B2 (ja) 2021-02-26 2023-11-30 株式会社東芝 センサ及び電子装置
EP4215478B1 (en) * 2022-01-25 2025-12-17 Murata Manufacturing Co., Ltd. Low-impact out-of-plane motion limiter for mems device

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CN101871952A (zh) * 2010-06-11 2010-10-27 瑞声声学科技(深圳)有限公司 Mems加速度传感器
CN102047126A (zh) * 2008-03-26 2011-05-04 惠普开发有限公司 具有循环电极组和绝对电极组的电容传感器
US20120048019A1 (en) * 2010-08-26 2012-03-01 Hanqin Zhou Highly sensitive capacitive sensor and methods of manufacturing the same
US20130229747A1 (en) * 2012-03-01 2013-09-05 Agilent Technologies, Inc. Balanced voltage variable capacitor device
CN203631322U (zh) * 2013-12-25 2014-06-04 歌尔声学股份有限公司 一种电容器及包括该电容器的电容式传感器
CN104185792A (zh) * 2012-01-12 2014-12-03 村田电子有限公司 加速度传感器结构及其使用
WO2014207710A1 (en) * 2013-06-28 2014-12-31 Murata Manufacturing Co., Ltd. Capacitive micromechanical sensor structure and micromechanical accelerometer

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JP3960502B2 (ja) * 1999-03-16 2007-08-15 学校法人立命館 静電容量型センサ
JP4063057B2 (ja) * 2002-11-20 2008-03-19 株式会社デンソー 容量式加速度センサ
WO2004077073A1 (en) 2003-02-24 2004-09-10 University Of Florida Integrated monolithic tri-axial micromachined accelerometer
US7469588B2 (en) 2006-05-16 2008-12-30 Honeywell International Inc. MEMS vertical comb drive with improved vibration performance
WO2008120256A1 (en) * 2007-04-03 2008-10-09 Stmicroelectronics S.R.L. Capacitive position sensing in an electrostatic micromotor
EP1998345A1 (en) 2007-05-31 2008-12-03 Infineon Technologies SensoNor AS Method of manufacturing capacitive elements for a capacitive device
US7690254B2 (en) 2007-07-26 2010-04-06 Honeywell International Inc. Sensor with position-independent drive electrodes in multi-layer silicon on insulator substrate
JP2010286471A (ja) * 2009-05-15 2010-12-24 Seiko Epson Corp Ｍｅｍｓセンサー、電子機器
AT11920U3 (de) 2010-08-12 2012-03-15 Oesterreichische Akademie Der Wissenschaften Verfahren zur herstellung einer mems-vorrichtung mit hohem aspektverhältnis, sowie wandler und kondensator
EP2861524A4 (en) 2012-06-13 2016-07-06 Purdue Research Foundation Microelectronicsystem and method of use
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CN102047126A (zh) * 2008-03-26 2011-05-04 惠普开发有限公司 具有循环电极组和绝对电极组的电容传感器
CN101871952A (zh) * 2010-06-11 2010-10-27 瑞声声学科技(深圳)有限公司 Mems加速度传感器
US20120048019A1 (en) * 2010-08-26 2012-03-01 Hanqin Zhou Highly sensitive capacitive sensor and methods of manufacturing the same
CN104185792A (zh) * 2012-01-12 2014-12-03 村田电子有限公司 加速度传感器结构及其使用
US20130229747A1 (en) * 2012-03-01 2013-09-05 Agilent Technologies, Inc. Balanced voltage variable capacitor device
WO2014207710A1 (en) * 2013-06-28 2014-12-31 Murata Manufacturing Co., Ltd. Capacitive micromechanical sensor structure and micromechanical accelerometer
CN203631322U (zh) * 2013-12-25 2014-06-04 歌尔声学股份有限公司 一种电容器及包括该电容器的电容式传感器

Also Published As

Publication number Publication date
CN107406250A (zh) 2017-11-28
TW201704141A (zh) 2017-02-01
JP2018514397A (ja) 2018-06-07
FI20155153L (fi) 2016-09-10
FI127229B (en) 2018-02-15
EP3268305A1 (en) 2018-01-17
EP3268305B1 (en) 2021-05-19
WO2016142832A1 (en) 2016-09-15
TWI619668B (zh) 2018-04-01
US20160264401A1 (en) 2016-09-15
US9969606B2 (en) 2018-05-15
JP6627883B2 (ja) 2020-01-08

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