CN107400923A - 一种增强金刚石热导率的方法 - Google Patents
一种增强金刚石热导率的方法 Download PDFInfo
- Publication number
- CN107400923A CN107400923A CN201710607290.XA CN201710607290A CN107400923A CN 107400923 A CN107400923 A CN 107400923A CN 201710607290 A CN201710607290 A CN 201710607290A CN 107400923 A CN107400923 A CN 107400923A
- Authority
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- China
- Prior art keywords
- diamond
- thermal conductivity
- silicon chip
- strengthening
- growth
- Prior art date
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- Granted
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 89
- 239000010432 diamond Substances 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000005728 strengthening Methods 0.000 title claims abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 230000012010 growth Effects 0.000 claims abstract description 22
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 20
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 238000000227 grinding Methods 0.000 claims abstract description 7
- 239000011259 mixed solution Substances 0.000 claims abstract description 7
- 230000007773 growth pattern Effects 0.000 claims abstract description 5
- 238000010792 warming Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 2
- 230000034655 secondary growth Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000002708 enhancing effect Effects 0.000 description 5
- 239000002131 composite material Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 206010068052 Mosaicism Diseases 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004556 brain Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 235000019580 granularity Nutrition 0.000 description 1
- 239000007770 graphite material Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002113 nanodiamond Substances 0.000 description 1
- 238000009790 rate-determining step (RDS) Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 210000003765 sex chromosome Anatomy 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0254—Physical treatment to alter the texture of the surface, e.g. scratching or polishing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710607290.XA CN107400923B (zh) | 2017-07-24 | 2017-07-24 | 一种增强金刚石热导率的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710607290.XA CN107400923B (zh) | 2017-07-24 | 2017-07-24 | 一种增强金刚石热导率的方法 |
Publications (2)
Publication Number | Publication Date |
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CN107400923A true CN107400923A (zh) | 2017-11-28 |
CN107400923B CN107400923B (zh) | 2020-10-27 |
Family
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Family Applications (1)
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CN201710607290.XA Active CN107400923B (zh) | 2017-07-24 | 2017-07-24 | 一种增强金刚石热导率的方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113423863A (zh) * | 2019-03-29 | 2021-09-21 | 六号元素技术有限公司 | 多晶合成金刚石材料 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104947068A (zh) * | 2015-06-10 | 2015-09-30 | 哈尔滨工业大学 | 一种金刚石热沉片的制备方法 |
CN105331948A (zh) * | 2015-09-25 | 2016-02-17 | 北京科技大学 | 一种表面p型导电金刚石热沉材料的制备方法 |
CN105506576A (zh) * | 2016-02-02 | 2016-04-20 | 太原理工大学 | 一种高品质自支撑金刚石厚膜的制备方法 |
-
2017
- 2017-07-24 CN CN201710607290.XA patent/CN107400923B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104947068A (zh) * | 2015-06-10 | 2015-09-30 | 哈尔滨工业大学 | 一种金刚石热沉片的制备方法 |
CN105331948A (zh) * | 2015-09-25 | 2016-02-17 | 北京科技大学 | 一种表面p型导电金刚石热沉材料的制备方法 |
CN105506576A (zh) * | 2016-02-02 | 2016-04-20 | 太原理工大学 | 一种高品质自支撑金刚石厚膜的制备方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113423863A (zh) * | 2019-03-29 | 2021-09-21 | 六号元素技术有限公司 | 多晶合成金刚石材料 |
Also Published As
Publication number | Publication date |
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CN107400923B (zh) | 2020-10-27 |
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Effective date of registration: 20230428 Address after: Room 1107, 11 / F, National University Science Park, Harbin Institute of technology, No. 434, youyou street, Nangang District, Harbin City, Heilongjiang Province, 150001 Patentee after: Harbin Institute of Technology Asset Management Co.,Ltd. Patentee after: Zhu Jiaqi Patentee after: Dai Bing Patentee after: Yang Lei Patentee after: Liu Kang Patentee after: Liu Benjian Patentee after: Li Yicun Patentee after: Zhao Jiwen Address before: 150001 No. 92 West straight street, Nangang District, Heilongjiang, Harbin Patentee before: HARBIN INSTITUTE OF TECHNOLOGY |
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Effective date of registration: 20230614 Address after: Room 214, building 23, Zhongbei District, Suzhou nano City, No. 99, Jinjihu Avenue, Suzhou Industrial Park, Suzhou, Jiangsu, 215021 Patentee after: Suzhou Carbon Core Material Technology Co.,Ltd. Address before: Room 1107, 11 / F, National University Science Park, Harbin Institute of technology, No. 434, youyou street, Nangang District, Harbin City, Heilongjiang Province, 150001 Patentee before: Harbin Institute of Technology Asset Management Co.,Ltd. Patentee before: Zhu Jiaqi Patentee before: Dai Bing Patentee before: Yang Lei Patentee before: Liu Kang Patentee before: Liu Benjian Patentee before: Li Yicun Patentee before: Zhao Jiwen |
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CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 450001 1st Floor, Building 3, National Beidou Industry Product Quality Supervision and Inspection Center, Cuibai Road and Qingmei Street Intersection, High tech Development Zone, Zhengzhou City, Henan Province Patentee after: Henan Carbon True Core Material Technology Co.,Ltd. Country or region after: China Address before: Room 214, building 23, Zhongbei District, Suzhou nano City, No. 99, Jinjihu Avenue, Suzhou Industrial Park, Suzhou, Jiangsu, 215021 Patentee before: Suzhou Carbon Core Material Technology Co.,Ltd. Country or region before: China |