CN107393889B - Parallel coaxial mounting electrode combination and power module - Google Patents
Parallel coaxial mounting electrode combination and power module Download PDFInfo
- Publication number
- CN107393889B CN107393889B CN201710764821.6A CN201710764821A CN107393889B CN 107393889 B CN107393889 B CN 107393889B CN 201710764821 A CN201710764821 A CN 201710764821A CN 107393889 B CN107393889 B CN 107393889B
- Authority
- CN
- China
- Prior art keywords
- power module
- electrode
- bridge
- substrate
- copper layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 86
- 229910052802 copper Inorganic materials 0.000 claims abstract description 86
- 239000010949 copper Substances 0.000 claims abstract description 86
- 238000003466 welding Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims description 138
- 230000000712 assembly Effects 0.000 claims 1
- 238000000429 assembly Methods 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 66
- 230000017525 heat dissipation Effects 0.000 description 44
- 238000010586 diagram Methods 0.000 description 31
- 239000002184 metal Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 238000004088 simulation Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5386—Geometry or layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a parallel coaxial mounting electrode combination, which comprises a first power module electrode and a second power module electrode, wherein the welding part of the first power module electrode and the welding part of the second power module electrode are respectively used for connecting a power copper layer in a power module, the connecting part of the first power module electrode and the connecting part of the second power module electrode are parallel and opposite, and are respectively provided with connecting holes, and the connecting holes on the connecting part of the first power module electrode are coaxial with the connecting holes on the connecting part of the second power module electrode. The invention also discloses a power module adopting the electrode combination. In the invention, the electrode connecting part of the first power module is parallel to and opposite to the electrode connecting part of the second power module, and the structure never appears in the prior art, so that the stray inductance can be greatly reduced compared with the prior art, which is clearly a great progress in the field.
Description
Technical Field
The invention relates to a parallel coaxial mounting electrode combination and a power module.
Background
The threat of global energy crisis and climate warming makes people pay more and more attention to energy conservation and emission reduction and low-carbon development while pursuing economic development. Along with the establishment and promotion of green and environment-friendly internationally, the development and application prospect of the power semiconductor are wider.
The parasitic inductance of the existing power electronic power module is often larger, and the parasitic inductance brought by the electrode of the existing power electronic power module accounts for a large part of the parasitic inductance, so that overshoot voltage is larger, loss is increased, and the application in high switching frequency occasions is limited.
Disclosure of Invention
The invention aims to: the invention aims to provide a parallel coaxial-mounted electrode combination and a power module, which can greatly reduce parasitic inductance.
The technical scheme is as follows: the parallel coaxial mounting electrode combination comprises a first power module electrode and a second power module electrode, wherein the welding part of the first power module electrode and the welding part of the second power module electrode are respectively used for connecting a power copper layer in a power module, the connecting part of the first power module electrode and the connecting part of the second power module electrode are parallel and opposite, and are respectively provided with connecting holes, and the connecting holes on the connecting part of the first power module electrode are coaxial with the connecting holes on the connecting part of the second power module electrode.
The power module adopting the parallel coaxial mounting electrode combination comprises an upper half-bridge substrate and a lower half-bridge substrate, wherein an upper half-bridge IGBT is arranged on the upper half-bridge substrate, a lower half-bridge IGBT is arranged on the lower half-bridge substrate, and a first power module electrode and a second power module electrode are respectively used as an anode and a cathode and further comprise an output electrode; when the power module is in operation, working current flows into the upper half-bridge substrate from the electrode connecting part of the first power module, flows through the upper half-bridge IGBT and flows out to the output electrode; during freewheeling, freewheeling current flows into the lower half-bridge substrate from the electrode connecting part of the second power module, flows through the lower half-bridge IGBT and flows out to the output electrode. The single-sided radiating power module can greatly reduce stray inductance.
The power module adopting the parallel coaxial mounting electrode combination comprises a bottom substrate and a top substrate, wherein an upper half-bridge IGBT and an intermediate substrate are arranged on the bottom substrate, a lower half-bridge IGBT is arranged on the intermediate substrate, and a first power module electrode and a second power module electrode are respectively used as positive and negative electrodes and further comprise an output electrode; when the IGBT device works, working current flows into the bottom substrate from the electrode connecting part of the first power module, flows into the top substrate after flowing through the upper half-bridge IGBT, and flows out through the output electrode connecting part; during freewheeling, freewheeling current flows in from the second power module electrode connection portion, flows to the lower half-bridge IGBT through the top substrate, then flows in the middle substrate, flows to the top substrate, and flows out through the output electrode connection portion. The double-sided radiating power module can greatly reduce stray inductance, and the middle substrate is arranged on the bottom substrate, so that the stray inductance is reduced more favorably.
Further, the upper surface of the bottom substrate is provided with a positive electrode copper layer, and the lower surface of the top substrate is provided with a negative electrode copper layer and an output electrode copper layer which are separated.
Further, a first connecting block is arranged between the upper half-bridge IGBT and the output electrode copper layer.
Further, a second connecting block is arranged between the lower half-bridge IGBT and the negative electrode copper layer.
Further, a connecting column is arranged between the middle substrate and the output electrode copper layer.
The beneficial effects are that: the invention discloses a parallel coaxial mounting electrode combination and a power module, which have the following beneficial effects compared with the prior art:
1) The electrode connecting part of the first power module is parallel and opposite to the electrode connecting part of the second power module, and the structure never appears in the prior art, so that compared with the prior art, the stray inductance can be greatly reduced, and the structure is a huge progress in the field;
2) The coaxial connecting holes are arranged on the first power module electrode connecting part and the second power module electrode connecting part, so that the power module electrode combination can be fixed by penetrating the connecting holes through the fixing device.
Drawings
FIG. 1 is a diagram of a power module according to an embodiment 1 of the present invention;
FIG. 2 is a partial enlarged view of a power module according to embodiment 1 of the present invention;
fig. 3 is a structural view of a capacitor electrode connection part according to embodiment 1 of the present invention;
fig. 4 is a structural diagram of a power module according to embodiment 1 of the present invention;
fig. 5 is a structural diagram of an electrode connection portion of a first power module according to embodiment 1 of the present invention;
fig. 6 is a schematic diagram of a power module according to embodiment 1 of the present invention using a single-sided heat dissipation structure;
FIG. 6 (a) is a schematic diagram of a power module with a single-sided heat dissipation structure;
FIG. 6 (b) is an upper half-bridge current path diagram;
FIG. 6 (c) is a lower half-bridge current path diagram;
fig. 7 is a schematic diagram of a power module according to embodiment 1 of the present invention using a double-sided heat dissipation structure;
FIG. 8 is a block diagram of a prior art power module;
FIG. 9 is a diagram showing a power module according to embodiment 2 of the present invention;
FIG. 10 is a partial enlarged view of a power module according to embodiment 2 of the present invention;
fig. 11 is a schematic diagram of a power module according to embodiment 2 of the present invention using a single-sided heat dissipation structure;
FIG. 11 (a) is a schematic diagram of a power module with a single-sided heat dissipation structure;
FIG. 11 (b) is an upper half-bridge current path diagram;
FIG. 11 (c) is a lower half-bridge current path diagram;
fig. 12 is a schematic diagram of a power module according to embodiment 2 of the present invention using a double-sided heat dissipation structure;
FIG. 13 is a diagram showing a power module according to embodiment 3 of the present invention;
FIG. 14 is a partial enlarged view of a power module according to embodiment 3 of the present invention;
FIG. 15 is a split view of a power module according to embodiment 3 of the present invention;
fig. 16 is a schematic diagram of a power module according to embodiment 3 of the present invention using a single-sided heat dissipation structure;
fig. 16 (a) is a schematic diagram of a power module employing a single-sided heat dissipation structure;
FIG. 16 (b) is an upper half-bridge current path diagram;
FIG. 16 (c) is a bottom half-bridge current path diagram;
fig. 17 is a schematic diagram of a power module according to embodiment 3 of the present invention using a double-sided heat dissipation structure;
FIG. 18 is a diagram showing a power module according to embodiment 4 of the present invention;
FIG. 19 is a partial enlarged view of the power module of the embodiment 4 of the invention;
FIG. 20 is a split view of a power module according to embodiment 4 of the present invention;
fig. 21 is a schematic diagram of a power module according to embodiment 4 of the present invention using a single-sided heat dissipation structure;
FIG. 21 (a) is a schematic diagram of a power module employing a single-sided heat dissipation structure;
FIG. 21 (b) is an upper half-bridge current path diagram;
FIG. 21 (c) is a bottom half-bridge current path diagram;
fig. 22 is a schematic diagram of a power module according to embodiment 4 of the present invention using a double-sided heat dissipation structure.
Detailed Description
The technical scheme of the invention is further described below by combining the embodiment and the attached drawings.
Example 1:
embodiment 1 discloses a power module with parallel mounting electrode combinations, as shown in fig. 1-5, comprising a capacitor with a capacitor electrode combination and a power module with a power module electrode combination. The capacitor electrode assembly comprises a first capacitor electrode and a second capacitor electrode, wherein a welding part 112 of the first capacitor electrode is connected with a negative electrode of the capacitor core group 111, a welding part 113 of the second capacitor electrode is connected with a positive electrode of the capacitor core group 111, the welding part 112 of the first capacitor electrode and the welding part 113 of the second capacitor electrode are both plate-shaped and positioned in the middle of the side surfaces of the capacitor, the welding part 112 of the first capacitor electrode is led out of a connecting part 114 of the first capacitor electrode, the welding part 113 of the second capacitor electrode is led out of a connecting part 115 of the second capacitor electrode, the connecting part 114 of the first capacitor electrode is parallel and opposite to the connecting part 115 of the second capacitor electrode, the connecting part 114 of the first capacitor electrode is longer than the connecting part 115 of the second capacitor electrode, two first connecting holes 1141 and two second connecting holes 1142 are arranged on the connecting part 114 of the first capacitor electrode, the two first connecting holes 1141 are arranged at one end of the connecting part 114 of the first capacitor electrode and the welding part 112 side by side, the two second connecting holes 1142 are arranged at the other end of the connecting part 114 of the first capacitor electrode, and two third connecting holes 1151 are arranged on the connecting part 115 of the second capacitor electrode. The power module electrode combination comprises a first power module electrode and a second power module electrode, wherein a welding part 118 of the first power module electrode and a welding part of the second power module electrode are respectively connected with a power copper layer in the power module, the welding part 118 of the first power module electrode leads out a connecting part 116 of the first power module electrode, the welding part of the second power module electrode leads out a connecting part 117 of the second power module electrode, the connecting part 116 of the first power module electrode is parallel and opposite to the connecting part 117 of the second power module electrode, the connecting part 116 of the first power module electrode is longer than the connecting part 117 of the second power module electrode, two fourth connecting holes 1161 and two fifth connecting holes 1162 are arranged on the connecting part 116 of the first power module electrode, the two fourth connecting holes 1161 are arranged at one end of the connecting part 116 of the first power module electrode and the welding part 118 of the first power module side by side, the two fifth connecting holes 1162 are arranged at the other end of the connecting part 116 of the first power module electrode, and two sixth connecting holes 1171 are arranged on the connecting part 117 of the second power module electrode. Wherein, the first connecting hole 1141 and the fourth connecting hole 1161 are larger than the other connecting holes.
In use, the capacitor and the power module are generally fixed by bolts and nuts, and a three-layer structure is formed during fixing, as shown in fig. 2, the first capacitor electrode connecting portion 114 and the first power module electrode connecting portion 116 are located at two ends, and the second capacitor electrode connecting portion 115 and the second power module electrode connecting portion 117 are located in the middle. There are several ways to fix, two of them are: 1) Inserting a nut into the first connecting hole 1141, and a body of a bolt mated with the nut penetrates the fifth connecting hole 1162 and the third connecting hole 1151 to be fastened with the nut; a nut is inserted into the fourth coupling hole 1161, and a body of a bolt matched with the nut penetrates through the second coupling hole 1142 and the sixth coupling hole 1171, thereby being fastened to the nut. 2) Embedding the head of the bolt into the first connecting hole 1141, the body of the bolt penetrating through the fifth connecting hole 1162 and the third connecting hole 1151, the nut being fastened to the bolt at the fifth connecting hole 1162; the head of the bolt is inserted into the fourth connecting hole 1161, the body of the bolt penetrates the second connecting hole 1142 and the sixth connecting hole 1171, and the nut is fastened to the bolt at the second connecting hole 1142.
The power module can adopt a single-sided heat dissipation structure or a double-sided heat dissipation structure, and the scheme adopting the single-sided heat dissipation structure and the double-sided heat dissipation structure is introduced below.
1. By single-sided heat-dissipating structure
As shown in fig. 6 (a), (b) and (c), a single-sided heat dissipation structure may be used in the power module, including an upper half-bridge substrate 121 and a lower half-bridge substrate 122, an upper half-bridge IGBT chip 1231 and an upper half-bridge diode chip 1233 are disposed on the upper half-bridge substrate 121, a lower half-bridge IGBT chip 1232 and a lower half-bridge diode chip 1234 are disposed on the lower half-bridge substrate 122, the first power module electrode is used as a positive electrode, the second power module electrode is used as a negative electrode, and the output electrode 137 is also provided. The upper half-bridge substrate 121 has a three-layer structure, the middle layer is an upper half-bridge substrate insulating layer, and the upper and lower layers are upper half-bridge substrate metal layers. The lower half-bridge substrate 122 may be a two-layer structure, with the upper layer being the lower half-bridge substrate metal layer and the lower layer being the lower half-bridge substrate insulating layer 124. The lower half-bridge substrate 122 may also be a three-layer structure, wherein the middle layer is a lower half-bridge substrate insulating layer 124, and the upper and lower layers are lower half-bridge substrate metal layers. To better illustrate the current paths of the upper and lower half-bridges, the power module is split into fig. 6 (b) and 6 (c). Fig. 6 (b) shows an operation current path of the upper half-bridge IGBT chip 1231 after being opened, and the operation current flows in from the first power module electrode connection 116, flows into the upper half-bridge substrate 121 through the bonding wire, flows through the upper half-bridge IGBT chip 1231, and flows out to the output electrode 137 through the bonding wire. Fig. 6 (c) shows the freewheeling current path after the upper half-bridge IGBT chip 1231 is turned off, and the freewheeling current flows in from the second power module electrode connection 117, flows into the lower half-bridge substrate 122 through the bonding wire, flows through the lower half-bridge diode chip 1234, and flows out to the output electrode 137 through the bonding wire. In addition, the working current path after the lower half-bridge IGBT chip 1232 is turned on is: working current flows in from the second power module electrode connection part 117, flows into the lower half-bridge substrate 122 through the binding line, flows through the lower half-bridge IGBT chip 1232, and flows out to the output electrode 137 through the binding line; the freewheeling current path after the lower half-bridge IGBT chip 1232 is turned off is: the freewheel current flows in from the first power module electrode connection portion 116, flows in the upper half-bridge substrate 121 through the bonding wire, flows through the upper half-bridge diode chip 1233, and flows out to the output electrode 137 through the bonding wire.
2. Adopts a double-sided heat radiation structure
As shown in fig. 7, a double-sided heat dissipation structure can be adopted inside the power module, and the power module comprises a bottom substrate 131, a middle substrate 132 and a top substrate 133, wherein a copper layer on the upper surface of the bottom substrate 131 is a positive electrode copper layer 1311, and two separated copper layers are arranged on the lower surface of the top substrate 133, namely a negative electrode copper layer 1331 and an output electrode copper layer 1332. An upper half-bridge chip 1381 is arranged on the positive electrode copper layer 1311, a first connecting block 134 is arranged between the upper half-bridge chip 1381 and the output electrode copper layer 1332, an intermediate substrate 132 is further arranged on the positive electrode copper layer 1311, a lower half-bridge chip 1382 is arranged on the intermediate substrate 132, a second connecting block 135 is arranged between the lower half-bridge chip 1382 and the negative electrode copper layer 1331, and a connecting column 136 is further arranged between the intermediate substrate 132 and the output electrode copper layer 1332. The first power module electrode serves as the positive electrode and the second power module electrode serves as the negative electrode, in addition to the output electrode 137. The first power module electrode connection portion 116 is connected to the positive electrode copper layer 1311, the second power module electrode connection portion 117 is connected to the negative electrode copper layer 1331, and the output electrode connection portion 1371 is connected to the output electrode copper layer 1332. Fig. 7 also shows the current path diagram during operation and during freewheeling. In operation, operating current flows from the first power module electrode connection 116, through the positive electrode copper layer 1311, into the upper half-bridge chip 1381, through the first connection block 134, to the output electrode copper layer 1332, and finally out of the output electrode connection 1371. During freewheeling, freewheeling current flows in from the second power module electrode connection 117, through the negative electrode copper layer 1331, into the second connection block 135, to the lower half-bridge chip 1382, to the intermediate substrate 132, through the connection post 136, into the output electrode copper layer 1332, and finally out of the output electrode connection 1371.
As shown in fig. 8, the electrode connection parts of the two power modules in the prior art are arranged side by side without any overlapping. In this embodiment, a power module with a double-sided heat dissipation structure is compared with a power module in the prior art in a simulation manner, and the simulation result is shown in table 1.
Table 1 example 1 simulation comparison of a power module with a double sided heat dissipating structure with the prior art
As can be seen from table 1, the stray inductance of the prior art power module is 12.99nH, while the stray inductance of the double-sided heat dissipation power module is only 3.28nH, i.e. embodiment 1 greatly reduces the stray inductance, which is also a good effect caused by the parallel mounting of the electrodes. The stray inductance is a critical parameter for the power module, the size of the stray inductance directly affects the performance of the power module, in general, it is difficult to reduce the stray inductance by several nH, as in the present embodiment, it is a very difficult breakthrough to reduce the stray inductance by nearly 10 nH-! Has very important significance for the development of the power module industry-!
Example 2:
embodiment 2 discloses a power module with parallel-interposed electrode combinations, as shown in fig. 9, including a capacitor with capacitor electrode combinations and a power module with power module electrode combinations. The capacitor electrode assembly comprises a first capacitor electrode 212 and a second capacitor electrode 213 which are opposite in parallel, the first capacitor electrode 212 and the second capacitor electrode 213 are plate-shaped and are positioned in the middle of the side surfaces of the capacitor, the first capacitor electrode 212 and the second capacitor electrode 213 are respectively connected with the anode and the cathode of the capacitor core group 211, as shown in fig. 10, part of the first capacitor electrode 212 is protruded, part of the second capacitor electrode 213 is also protruded, and the protrusions of the first capacitor electrode 212 and the protrusions of the second capacitor electrode 213 form a containing cavity together. The power module electrode assembly comprises a first power module electrode and a second power module electrode, the first power module electrode welding part and the second power module electrode welding part are respectively connected with a power copper layer in the power module, the first power module electrode connecting part 214 and the second power module electrode connecting part 215 are opposite in parallel, and the first power module electrode connecting part 214 and the second power module electrode connecting part 215 can be inserted into the accommodating cavity.
The power module can adopt a single-sided heat dissipation structure or a double-sided heat dissipation structure, and the scheme adopting the single-sided heat dissipation structure and the double-sided heat dissipation structure is introduced below.
1. By single-sided heat-dissipating structure
As shown in fig. 11 (a), (b) and (c), a single-sided heat dissipation structure may be used in the power module, including an upper half-bridge substrate 221 and a lower half-bridge substrate 222, an upper half-bridge IGBT chip 2231 and an upper half-bridge diode chip 2233 are disposed on the upper half-bridge substrate 221, a lower half-bridge IGBT chip 2232 and a lower half-bridge diode chip 2234 are disposed on the lower half-bridge substrate 222, the first power module electrode is used as a positive electrode, the second power module electrode is used as a negative electrode, and the output electrode 237 is further provided. The upper half-bridge substrate 221 has a three-layer structure, the middle layer is an upper half-bridge substrate insulating layer, and the upper and lower layers are upper half-bridge substrate metal layers. The lower half-bridge substrate 222 may be a two-layer structure, with the upper layer being the lower half-bridge substrate metal layer and the lower layer being the lower half-bridge substrate insulating layer 224. The lower half-bridge substrate 222 may also be a three-layer structure, in which one layer is a lower half-bridge substrate insulating layer 224, and the upper and lower layers are lower half-bridge substrate metal layers. In order to better illustrate the current paths of the upper and lower half-bridges, the power module is split into fig. 11 (b) and 11 (c). Fig. 11 (b) shows an operation current path after the upper half-bridge IGBT chip 2231 is opened, and an operation current flows from the first power module electrode connection portion 214, flows into the upper half-bridge substrate 221 through the bonding wire, flows through the upper half-bridge IGBT chip 2231, and flows out to the output electrode 237 through the bonding wire. Fig. 11 (c) shows the freewheeling current path after the upper half-bridge IGBT chip 2231 is turned off, and the freewheeling current flows in from the second power module electrode connection 215, flows into the lower half-bridge substrate 222 through the bonding wire, flows through the lower half-bridge diode chip 2234, and flows out to the output electrode 237 through the bonding wire. In addition, the working current path after the lower half-bridge IGBT chip 2232 is turned on is: working current flows in from the second power module electrode connection portion 215, flows in the lower half-bridge substrate 222 through the binding line, flows through the lower half-bridge IGBT chip 2232, and flows out to the output electrode 237 through the binding line; the freewheeling current path after the lower half-bridge IGBT chip 2232 is turned off is: the freewheel current flows in from the first power module electrode connection portion 214, flows in the upper half-bridge substrate 221 through the bonding wire, flows through the upper half-bridge diode chip 2233, and flows out to the output electrode 237 through the bonding wire.
2. Adopts a double-sided heat radiation structure
As shown in fig. 12, a double-sided heat dissipation structure can be adopted inside the power module, and the power module comprises a bottom substrate 231, a middle substrate 232 and a top substrate 233, wherein a copper layer on the upper surface of the bottom substrate 231 is a positive electrode copper layer 2311, and two separated copper layers are respectively a negative electrode copper layer 2331 and an output electrode copper layer 2332 on the lower surface of the top substrate 233. The positive electrode copper layer 2311 is provided with an upper half-bridge chip 2381, a first connecting block 234 is arranged between the upper half-bridge chip 2381 and the output electrode copper layer 2332, the positive electrode copper layer 2311 is also provided with an intermediate substrate 232, the intermediate substrate 232 is provided with a lower half-bridge chip 2382, a second connecting block 235 is arranged between the lower half-bridge chip 2382 and the negative electrode copper layer 2331, and a connecting column 236 is also arranged between the intermediate substrate 232 and the output electrode copper layer 2332. The first power module electrode serves as a positive electrode, the second power module electrode serves as a negative electrode, and there is an output electrode 237. The first power module electrode connection portion 216 is connected to the positive electrode copper layer 2311, the second power module electrode connection portion 217 is connected to the negative electrode copper layer 2331, and the output electrode connection portion 2371 is connected to the output electrode copper layer 2332. Fig. 12 also shows the current path diagram during operation and during freewheeling. In operation, operating current flows from first power module electrode connection 216, through positive electrode copper layer 2311, into upper half-bridge chip 2381, through first connection block 234 to output electrode copper layer 2332, and finally out of output electrode connection 2371. During freewheeling, freewheeling current flows in from the second power module electrode connection 217, flows in the second connection block 235 through the negative electrode copper layer 2331, flows to the lower half-bridge chip 2382, flows to the intermediate substrate 232, flows in the output electrode copper layer 2332 through the connection post 236, and finally flows out from the output electrode connection 2371.
As shown in fig. 8, the electrode connection parts of the two power modules in the prior art are arranged side by side without any overlapping. In this embodiment, a power module with a double-sided heat dissipation structure is compared with a power module in the prior art in a simulation manner, and the simulation result is shown in table 2.
Table 2 example 2 simulation comparison of a power module with a double sided heat dissipating structure with the prior art
As can be seen from table 2, the stray inductance of the prior art power module is 12.99nH, while the stray inductance of the double-sided heat dissipation power module is only 3.43nH, i.e. embodiment 2 greatly reduces the stray inductance, which is also a good effect caused by the parallel mounting of the electrodes. The stray inductance is a critical parameter for the power module, the size of the stray inductance directly affects the performance of the power module, in general, it is difficult to reduce the stray inductance by several nH, as in the present embodiment, it is a very difficult breakthrough to reduce the stray inductance by nearly 10 nH-! Has very important significance for the development of the power module industry-!
Example 3:
embodiment 3 discloses a power module with parallel coaxial mounting electrode combinations, as shown in fig. 13, comprising a capacitor with capacitor electrode combinations and a power module with power module electrode combinations. The capacitive electrode assembly includes a first capacitive electrode and a second capacitive electrode. The welding part 312 of the first capacitor electrode and the welding part 313 of the second capacitor electrode are respectively connected with the anode and the cathode of the capacitor core group 311, the welding part 312 of the first capacitor electrode is led out of the connecting part 314 of the first capacitor electrode, and the welding part 313 of the second capacitor electrode is led out of the connecting part 315 of the second capacitor electrode. The first capacitor electrode welding portion 312 and the second capacitor electrode welding portion 313 are both plate-shaped and located in the middle of the capacitor side face. The first capacitive electrode connection portion 314 and the second capacitive electrode connection portion 315 are opposite in parallel, and as shown in fig. 14, a first connection hole 3141 and a second connection hole 3142 are provided on the first capacitive electrode connection portion 314, and a third connection hole and a fourth connection hole are provided on the second capacitive electrode connection portion 315. The power module electrode assembly includes a first power module electrode and a second power module electrode. The welding part of the first power module electrode and the welding part of the second power module electrode are respectively connected with a power copper layer in the power module, the welding part of the first power module electrode leads out a first power module electrode connecting part 316, the welding part of the second power module electrode leads out a second power module electrode connecting part 317, the first power module electrode connecting part 316 is opposite to the second power module electrode connecting part 317 in parallel, as shown in fig. 15, a fifth connecting hole 3161 and a sixth connecting hole 3162 are arranged on the first power module electrode connecting part 316, and a seventh connecting hole and an eighth connecting hole are arranged on the second power module electrode connecting part 317. Further, the first connecting hole 3141, the fifth connecting hole 3161, the seventh connecting hole, and the third connecting hole are all coaxially provided, and the second connecting hole 3142, the sixth connecting hole 3162, the eighth connecting hole, and the fourth connecting hole are all coaxially provided.
The power module can adopt a single-sided heat dissipation structure or a double-sided heat dissipation structure, and the scheme adopting the single-sided heat dissipation structure and the double-sided heat dissipation structure is introduced below.
1. By single-sided heat-dissipating structure
As shown in fig. 16 (a), (b) and (c), a single-sided heat dissipation structure may be used in the power module, including an upper half-bridge substrate 321 and a lower half-bridge substrate 322, where an upper half-bridge IGBT chip 3231 and an upper half-bridge diode chip 3233 are disposed on the upper half-bridge substrate 321, a lower half-bridge IGBT chip 3232 and a lower half-bridge diode chip 3234 are disposed on the lower half-bridge substrate 322, the first power module electrode is used as a positive electrode, the second power module electrode is used as a negative electrode, and the output electrode 337 is further provided. The upper half-bridge substrate 321 has a three-layer structure, the middle layer is an upper half-bridge substrate insulating layer, and the upper and lower layers are upper half-bridge substrate metal layers. The lower half-bridge substrate 322 may be a two-layer structure with the upper layer being the lower half-bridge substrate metal layer and the lower layer being the lower half-bridge substrate insulating layer 324. The lower half-bridge substrate 322 may also be a three-layer structure, with the middle layer being the lower half-bridge substrate insulating layer 324 and the upper and lower layers being the lower half-bridge substrate metal layer. To better illustrate the current paths of the upper and lower half-bridges, the power module is split into fig. 16 (b) and 16 (c). Fig. 16 (b) shows an operation current path after the upper half-bridge IGBT chip 3231 is opened, and an operation current flows in from the first power module electrode connection portion 314, flows in the upper half-bridge substrate 321 through the bonding wire, flows through the upper half-bridge IGBT chip 3231, and flows out to the output electrode 337 through the bonding wire. Fig. 16 (c) shows the freewheeling current path after the upper half-bridge IGBT chip 3231 is turned off, and the freewheeling current flows in from the second power module electrode connection 315, flows into the lower half-bridge substrate 322 through the bonding wire, flows through the lower half-bridge diode chip 3234, and flows out to the output electrode 337 through the bonding wire. In addition, the working current path after the lower half-bridge IGBT chip 3232 is turned on is: working current flows in from the second power module electrode connection part 315, flows into the lower half-bridge substrate 322 through the binding wire, flows through the lower half-bridge IGBT chip 3232 and flows out to the output electrode 337 through the binding wire; the freewheeling current path after the lower half-bridge IGBT chip 3232 is turned off is: the freewheel current flows in from the first power module electrode connection portion 314, flows in the upper half-bridge substrate 321 through the bonding wire, flows through the upper half-bridge diode chip 3233, and flows out to the output electrode 337 through the bonding wire.
2. Adopts a double-sided heat radiation structure
As shown in fig. 17, a dual-sided heat dissipation structure can be used in the power module, which includes a bottom substrate 331, a middle substrate 332, and a top substrate 333, wherein the copper layer on the upper surface of the bottom substrate 331 is a positive electrode copper layer 3311, and the lower surface of the top substrate 333 has two separated copper layers, namely a negative electrode copper layer 3331 and an output electrode copper layer 3332. An upper half-bridge chip 3381 is arranged on the positive electrode copper layer 3311, a first connecting block 334 is arranged between the upper half-bridge chip 3381 and the output electrode copper layer 3332, an intermediate substrate 332 is further arranged on the positive electrode copper layer 3311, a lower half-bridge chip 3382 is arranged on the intermediate substrate 332, a second connecting block 335 is arranged between the lower half-bridge chip 3382 and the negative electrode copper layer 3331, and a connecting column 336 is further arranged between the intermediate substrate 332 and the output electrode copper layer 3332. The first power module electrode serves as a positive electrode, the second power module electrode serves as a negative electrode, and an output electrode 337 is provided. The first power module electrode connection portion 316 is connected to the positive electrode copper layer 3311, the second power module electrode connection portion 317 is connected to the negative electrode copper layer 3331, and the output electrode connection portion 3371 is connected to the output electrode copper layer 3332. Fig. 17 also shows the current path diagrams during operation and during freewheeling. In operation, operating current flows from the first power module electrode connection 316, through the positive electrode copper layer 3311, into the upper half-bridge chip 3381, through the first connection block 334, to the output electrode copper layer 3332, and finally out of the output electrode connection 3371. During freewheeling, freewheeling current flows from the second power module electrode connection 317, flows into the second connection block 335 through the negative electrode copper layer 3331, flows to the lower half-bridge chip 3382, flows to the intermediate substrate 332, flows into the output electrode copper layer 3332 through the connection post 336, and finally flows out of the output electrode connection 3371.
As shown in fig. 8, the electrode connection parts of the two power modules in the prior art are arranged side by side without any overlapping. In this embodiment, a power module with a double-sided heat dissipation structure is compared with a power module in the prior art in a simulation manner, and the simulation result is shown in table 3.
Table 3 example 3 simulation comparison of a power module with a double sided heat dissipating structure with the prior art
As can be seen from table 3, the stray inductance of the prior art power module is 12.99nH, while the stray inductance of the double-sided heat dissipation power module is only 3.27nH, i.e. embodiment 3 greatly reduces the stray inductance, which is also a good effect due to the parallel mounting of the electrodes. The stray inductance is a critical parameter for the power module, the size of the stray inductance directly affects the performance of the power module, in general, it is difficult to reduce the stray inductance by several nH, as in the present embodiment, it is a very difficult breakthrough to reduce the stray inductance by nearly 10 nH-! Has very important significance for the development of the power module industry-!
Example 4:
embodiment 4 discloses a power module with a cross-arranged electrode combination, as shown in fig. 18, comprising a capacitor with a capacitor electrode combination and a power module with a power module electrode combination. The capacitor electrode assembly comprises a first capacitor electrode and a second capacitor electrode which are opposite in parallel. The first capacitor electrode and the second capacitor electrode are plate-shaped and are positioned in the middle of the side surfaces of the capacitor, and the first capacitor electrode and the second capacitor electrode are respectively connected with the anode and the cathode of the capacitor core group 411. As shown in fig. 18 and 19, the first capacitance electrode welding portion 412 leads out a plurality of first capacitance electrode connecting portions 414, a first connecting hole 4141 is provided on the first capacitance electrode connecting portion 414, the second capacitance electrode welding portion 413 leads out a plurality of second capacitance electrode connecting portions 415, a second connecting hole 4151 is provided on the second capacitance electrode connecting portion 415, and the first capacitance electrode connecting portions 414 are arranged in parallel and in a crossing manner with the second capacitance electrode connecting portions 415. The power module electrode assembly includes a first power module electrode and a second power module electrode. As shown in fig. 20, the first power module electrode welding portion draws out a plurality of first power module electrode connection portions 416, the first power module electrode connection portions 416 are provided with third connection holes 4161, the second power module electrode welding portion draws out a plurality of second power module electrode connection portions 417, the second power module electrode connection portions 417 are provided with fourth connection holes 4171, and the first power module electrode connection portions 416 are arranged in parallel and in a cross manner with the second power module electrode connection portions 417. The first connection hole 4141 is disposed coaxially with the third connection hole 4161, and the second connection hole 4151 is disposed coaxially with the fourth connection hole 4171.
The power module can adopt a single-sided heat dissipation structure or a double-sided heat dissipation structure, and the scheme adopting the single-sided heat dissipation structure and the double-sided heat dissipation structure is introduced below.
1. By single-sided heat-dissipating structure
As shown in fig. 21 (a), (b) and (c), a single-sided heat dissipation structure may be used in the power module, including an upper half-bridge substrate 421 and a lower half-bridge substrate 422, where an upper half-bridge IGBT chip 4231 and an upper half-bridge diode chip 4233 are disposed on the upper half-bridge substrate 421, a lower half-bridge IGBT chip 4232 and a lower half-bridge diode chip 4234 are disposed on the lower half-bridge substrate 422, the first power module electrode is used as a positive electrode, the second power module electrode is used as a negative electrode, and further, an output electrode 437 is provided. The upper half bridge substrate 421 has a three-layer structure, the middle layer is an upper half bridge substrate insulating layer, and the upper and lower layers are upper half bridge substrate metal layers. The lower half-bridge substrate 422 may be a two-layer structure, with the upper layer being the lower half-bridge substrate metal layer and the lower layer being the lower half-bridge substrate insulating layer 424. The lower half-bridge substrate 422 may also be a three-layer structure, wherein the middle layer is a lower half-bridge substrate insulating layer 424, and the upper and lower layers are lower half-bridge substrate metal layers. In order to better illustrate the current paths of the upper and lower half-bridges, the power module is split into fig. 21 (b) and 21 (c). Fig. 21 (b) shows an operation current path after the upper half-bridge IGBT chip 4231 is opened, and an operation current flows in from the first power module electrode connection portion 414, flows into the upper half-bridge substrate 421 through the bonding wire, flows through the upper half-bridge IGBT chip 4231, and flows out to the output electrode 437 through the bonding wire. Fig. 21 (c) shows a freewheeling current path after the upper half-bridge IGBT chip 4231 is turned off, and the freewheeling current flows in from the second power module electrode connection 415, flows into the lower half-bridge substrate 42 through the bonding wire, flows through the lower half-bridge diode chip 4234, and flows out to the output electrode 437 through the bonding wire. In addition, the working current path after the lower half-bridge IGBT chip 4232 is turned on is: working current flows in from the second power module electrode connection portion 415, flows in the lower half-bridge substrate 422 through the bonding wire, flows through the lower half-bridge IGBT chip 4232, and flows out to the output electrode 437 through the bonding wire; the freewheeling current path after the lower half-bridge IGBT chip 4232 is turned off is: the freewheel current flows in from the first power module electrode connection portion 414, flows into the upper half-bridge substrate 421 through the bonding wire, flows through the upper half-bridge diode chip 4233, and flows out to the output electrode 437 through the bonding wire.
2. Adopts a double-sided heat radiation structure
As shown in fig. 22, a double-sided heat dissipation structure can be adopted inside the power module, and the power module comprises a bottom substrate 431, a middle substrate 432 and a top substrate 433, wherein a copper layer on the upper surface of the bottom substrate 431 is a positive electrode copper layer 4311, and two separated copper layers are arranged on the lower surface of the top substrate 433, namely a negative electrode copper layer 4331 and an output electrode copper layer 4332. The positive electrode copper layer 4311 is provided with an upper half-bridge chip 4381, a first connecting block 434 is arranged between the upper half-bridge chip 4381 and the output electrode copper layer 4332, the positive electrode copper layer 4311 is also provided with an intermediate substrate 432, the intermediate substrate 432 is provided with a lower half-bridge chip 4382, a second connecting block 435 is arranged between the lower half-bridge chip 4382 and the negative electrode copper layer 4331, and a connecting column 436 is also arranged between the intermediate substrate 432 and the output electrode copper layer 4332. The first power module electrode serves as a positive electrode, the second power module electrode serves as a negative electrode, and an output electrode 437 is provided. The first power module electrode connection portion 416 is connected to the positive electrode copper layer 4311, the second power module electrode connection portion 417 is connected to the negative electrode copper layer 4331, and the output electrode connection portion 4371 is connected to the output electrode copper layer 4332. Fig. 22 also shows the current path diagram during operation and during freewheeling. In operation, operating current flows from the first power module electrode connection 416, through the positive electrode copper layer 4311, into the upper half-bridge chip 4381, through the first connection block 434 to the output electrode copper layer 4332, and finally out of the output electrode connection 4371. During freewheeling, freewheeling current flows in from the second power module electrode connection 417, through the negative electrode copper layer 4331, into the second connection block 435, then to the lower half-bridge chip 4382, then to the intermediate substrate 432, then through the connection post 436 into the output electrode copper layer 4332, and finally out of the output electrode connection 4371.
As shown in fig. 8, the electrode connection parts of the two power modules in the prior art are arranged side by side without any overlapping. In this embodiment, a power module with a double-sided heat dissipation structure is compared with a power module in the prior art in a simulation manner, and the simulation result is shown in table 4.
Table 4 example 4 simulation comparison of a power module with a double sided heat dissipating structure with the prior art
As can be seen from table 4, the stray inductance of the prior art power module is 12.99nH, while the stray inductance of the double-sided heat dissipation power module is only 3.62nH, i.e. embodiment 4 greatly reduces the stray inductance, which is also a good effect due to the parallel mounting of the electrodes. The stray inductance is a critical parameter for the power module, the size of the stray inductance directly affects the performance of the power module, in general, it is difficult to reduce the stray inductance by several nH, as in the present embodiment, it is a very difficult breakthrough to reduce the stray inductance by nearly 10 nH-! Has very important significance for the development of the power module industry.
Claims (5)
1. A power module employing parallel coaxial-mounted electrode assemblies, characterized by: the power module comprises a first power module electrode and a second power module electrode, wherein the welding part of the first power module electrode and the welding part of the second power module electrode are respectively used for connecting a power copper layer in the power module, the connecting part of the first power module electrode is parallel and opposite to the connecting part of the second power module electrode, and connecting holes are respectively formed in the connecting part of the first power module electrode and the connecting holes in the connecting part of the second power module electrode; the power module comprises a bottom substrate and a top substrate, wherein an upper half-bridge chip and a middle substrate are arranged on the bottom substrate, a lower half-bridge chip is arranged on the middle substrate, and a first power module electrode and a second power module electrode are respectively used as positive and negative electrodes and further comprise an output electrode; when the power module is in operation, working current flows into the bottom substrate from the electrode connecting part of the first power module, flows to the top substrate after flowing through the upper half-bridge chip, and flows out through the output electrode connecting part; during freewheeling, freewheeling current flows in from the second power module electrode connection part, flows to the lower half-bridge chip through the top substrate, then flows in the middle substrate, flows to the top substrate, and flows out through the output electrode connection part.
2. The power module of claim 1, wherein: the upper surface of the bottom substrate is provided with a positive electrode copper layer, and the lower surface of the top substrate is provided with a separated negative electrode copper layer and an output electrode copper layer.
3. The power module of claim 2, wherein: and a first connecting block is arranged between the upper half-bridge chip and the output electrode copper layer.
4. The power module of claim 2, wherein: and a second connecting block is arranged between the lower half-bridge chip and the negative electrode copper layer.
5. The power module of claim 2, wherein: and a connecting column is arranged between the middle substrate and the output electrode copper layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710764821.6A CN107393889B (en) | 2017-08-30 | 2017-08-30 | Parallel coaxial mounting electrode combination and power module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710764821.6A CN107393889B (en) | 2017-08-30 | 2017-08-30 | Parallel coaxial mounting electrode combination and power module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107393889A CN107393889A (en) | 2017-11-24 |
| CN107393889B true CN107393889B (en) | 2024-01-05 |
Family
ID=60348782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710764821.6A Active CN107393889B (en) | 2017-08-30 | 2017-08-30 | Parallel coaxial mounting electrode combination and power module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107393889B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109216339A (en) * | 2018-10-31 | 2019-01-15 | 广东美的制冷设备有限公司 | Highly integrated power module and electric appliance |
| CN109360818B (en) * | 2018-11-05 | 2024-01-12 | 深圳市奕通功率电子有限公司 | Power module with symmetrical branch arrangement of input electrodes |
| CN109360820B (en) * | 2018-11-05 | 2024-03-29 | 深圳市奕通功率电子有限公司 | Power module and power module for multi-path branch layout wiring |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201417771Y (en) * | 2009-04-02 | 2010-03-03 | 嘉兴斯达微电子有限公司 | Power module with lower stray inductance |
| JP2013135538A (en) * | 2011-12-27 | 2013-07-08 | Denso Corp | Power conversion device |
| CN207381383U (en) * | 2017-08-30 | 2018-05-18 | 扬州国扬电子有限公司 | A kind of parallel coaxial installation electrode combination and power module |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4567029B2 (en) * | 2007-06-22 | 2010-10-20 | 日立オートモティブシステムズ株式会社 | Power converter |
-
2017
- 2017-08-30 CN CN201710764821.6A patent/CN107393889B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201417771Y (en) * | 2009-04-02 | 2010-03-03 | 嘉兴斯达微电子有限公司 | Power module with lower stray inductance |
| JP2013135538A (en) * | 2011-12-27 | 2013-07-08 | Denso Corp | Power conversion device |
| CN207381383U (en) * | 2017-08-30 | 2018-05-18 | 扬州国扬电子有限公司 | A kind of parallel coaxial installation electrode combination and power module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107393889A (en) | 2017-11-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107403783B (en) | Parallel electrode combination, power module and power module | |
| US11532538B2 (en) | Component structure, power module and power module assembly structure | |
| CN107393901B (en) | Double-sided heat dissipation power module of laminated substrate | |
| CN107369657B (en) | Double-sided heat dissipation power module with multiple areas arranged in parallel | |
| CN102339818B (en) | Power module and manufacture method thereof | |
| CN104170086B (en) | The manufacture method of semiconductor device and semiconductor device | |
| CN107393889B (en) | Parallel coaxial mounting electrode combination and power module | |
| CN107170720A (en) | A kind of stacked package two-side radiation power model | |
| CN111554645B (en) | Double-sided water-cooling SiC half-bridge module packaging structure integrated with laminated busbar | |
| JP2020009834A (en) | Semiconductor device | |
| CN102693969A (en) | Insulated gate bipolar translator (IGBT) power module | |
| TWI446462B (en) | Power module | |
| CN201417771Y (en) | Power module with lower stray inductance | |
| CN218827135U (en) | Miniature narrow pulse high-power output module based on chip three-dimensional arrangement | |
| CN115621233B (en) | A shell for full accuse formula power electronic device | |
| CN110012590B (en) | Full-bridge integrated module based on PCB embedding process | |
| CN204614783U (en) | A kind of Intelligent Power Module | |
| US10230365B2 (en) | Bridge leg circuit assembly and full-bridge circuit assembly | |
| CN202434507U (en) | High-reliability high-power insulated gate bipolar transistor module | |
| CN106098651B (en) | A kind of power device packaging structure and packaging method | |
| CN114267649A (en) | Double-sided heat dissipation SiC half-bridge module packaging structure with extremely low parasitic inductance | |
| CN202679787U (en) | Multilayer substrate | |
| CN207381397U (en) | A kind of power modules with parallel coaxial installation electrode combination | |
| CN207381383U (en) | A kind of parallel coaxial installation electrode combination and power module | |
| CN215529425U (en) | Heavy current MOS pipe module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |