CN207381397U - A kind of power modules with parallel coaxial installation electrode combination - Google Patents
A kind of power modules with parallel coaxial installation electrode combination Download PDFInfo
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- CN207381397U CN207381397U CN201721098284.8U CN201721098284U CN207381397U CN 207381397 U CN207381397 U CN 207381397U CN 201721098284 U CN201721098284 U CN 201721098284U CN 207381397 U CN207381397 U CN 207381397U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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Abstract
The utility model discloses a kind of power modules with parallel coaxial installation electrode combination, power module including the capacitance combined with capacitance electrode and with power module electrode combination, capacitance electrode combination includes the first capacitance electrode and the second capacitance electrode, and power module electrode combination includes the first power module electrode and the second power module electrode.The utility model can substantially reduce stray inductance compared with prior art, this is undoubtedly a huge progress in this field；Be equipped with connecting hole in the first capacitance electrode connecting portion of the utility model, the second capacitance electrode connecting portion, the first power module electrode connecting portion and the second power module electrode connecting portion, enabling by fixing device through connecting hole realize power module electrode combination combined with capacitance electrode fixation.
Description
Technical field
The utility model is related to power modules, more particularly to a kind of power mould with parallel coaxial installation electrode combination
Group.
Background technology
It is energy saving that the threat of global energy crisis and climate warming allows people increasingly to pay attention to while economic development is pursued
Emission reduction, low carbon development.With environmentally protective establishment and propulsion in the world, the development of power semiconductor, application prospect are more
It is wide.
The stray inductance of existing electric and electronic power module is often bigger, this can be caused, and overshoot voltage is larger, increasing is lost
Add, and also limit the application in high switching frequency occasion.
Utility model content
Purpose of utility model：The purpose of this utility model be to provide it is a kind of can substantially reduce stray inductance have it is parallel
It is co-axially mounted the power modules of electrode combination.
Technical solution：Power modules described in the utility model with parallel coaxial installation electrode combination, including having
The capacitance of capacitance electrode combination and the power module with power module electrode combination；Capacitance electrode combination includes the first capacitance electricity
The weld part of pole and the second capacitance electrode, the weld part of the first capacitance electrode and the second capacitance electrode connects capacitance core group respectively
Positive and negative anodes, the weld part of the first capacitance electrode draw the connecting portion of the first capacitance electrode, and the weld part of the second capacitance electrode is drawn
The connecting portion of second capacitance electrode, the connecting portion of the first capacitance electrode face parallel with the connecting portion of the second capacitance electrode and difference
Equipped with connecting hole, the connecting hole on the first capacitance electrode connecting portion and the connecting hole on the second capacitance electrode connecting portion are coaxial；Work(
The combination of rate module electrodes includes the first power module electrode and the second power module electrode, the weld part of the first power module electrode
The power supply layers of copper inside power module, the first power module electrode welding are connected respectively with the weld part of the second power module electrode
The first power module electrode connecting portion is drawn in portion, and the connection of the second power module electrode is drawn in the second power module electrode welding portion
Portion, the connecting portion of the first power module electrode face parallel with the connecting portion of the second power module electrode and is respectively equipped with connection
Hole, the connecting hole in the first power module electrode connecting portion and the connecting hole in the second power module electrode connecting portion are coaxial；Work(
The connecting portion that the connecting portion of rate module electrodes combination can be combined with capacitance electrode is co-axially mounted.
Further, the weld part of first capacitance electrode face parallel with the weld part of the second capacitance electrode is set.This
Sample can further reduce stray inductance.
Further, the first capacitance electrode weld part and the second capacitance electrode weld part it is each there are one, the first capacitance electricity
Pole connecting portion and the second capacitance electrode connecting portion have multiple.So can just multiple power modules be given to power with a capacitance.
Further, the first capacitance electrode weld part and the second capacitance electrode weld part are plate.So effectively increase
Big facing area between first capacitance electrode weld part and the second capacitance electrode weld part, reduces further stray electrical
Sense.
Further, the first capacitance electrode weld part and the second capacitance electrode welding position are among capacitance side.This
Sample so that positive and negative anodes current path length is equal, can further reduce stray inductance.
Further, the power module is internally provided with bottom substrate, Intermediate substrate and head substrate, and Intermediate substrate is directly set
It puts in bottom substrate upper surface.It so also can further reduce stray inductance.
Advantageous effect：The utility model discloses a kind of power modules of parallel coaxial installation electrode combination, with existing skill
Art is compared, and has following advantageous effect：
1) the first capacitance electrode connecting portion of the utility model face parallel with the second capacitance electrode connecting portion, the first power
Module electrodes connecting portion never goes out in the prior art with the second power module electrode connecting portion also parallel face, this structure
It is existing, stray inductance can be substantially reduced compared with prior art, this is undoubtedly a huge progress in this field；
2) the first capacitance electrode connecting portion of the utility model, the second capacitance electrode connecting portion, the first power module electrode
Connecting hole is equipped in connecting portion and the second power module electrode connecting portion, enabling real through connecting hole by fixing device
Fixation between now power module electrode combination is combined with capacitance electrode.
Description of the drawings
Fig. 1 is the structure chart of the power modules of the utility model embodiment 1；
Fig. 2 is the partial enlarged view of the power modules of the utility model embodiment 1；
Fig. 3 is the structure chart of the capacitance electrode connecting portion of the utility model embodiment 1；
Fig. 4 is the structure chart of the power module of the utility model embodiment 1；
Fig. 5 is the structure chart of the first power module electrode connecting portion of the utility model embodiment 1；
Fig. 6 is that the power module of the utility model embodiment 1 uses the schematic diagram of single side radiator structure；
Fig. 6 (a) is the schematic diagram that power module uses single side radiator structure；
Fig. 6 (b) is upper half-bridge current path figure；
Fig. 6 (c) is lower half-bridge current path figure；
Fig. 7 is that the power module of the utility model embodiment 1 uses the schematic diagram of two-side radiation structure；
Fig. 8 is the structure chart of the power module of the prior art；
Fig. 9 is the structure chart of the power modules of the utility model embodiment 2；
Figure 10 is the partial enlarged view of the power modules of the utility model embodiment 2；
Figure 11 is that the power module of the utility model embodiment 2 uses the schematic diagram of single side radiator structure；
Figure 11 (a) is the schematic diagram that power module uses single side radiator structure；
Figure 11 (b) is upper half-bridge current path figure；
Figure 11 (c) is lower half-bridge current path figure；
Figure 12 is that the power module of the utility model embodiment 2 uses the schematic diagram of two-side radiation structure；
Figure 13 is the structure chart of the power modules of the utility model embodiment 3；
Figure 14 is the partial enlarged view of the power modules of the utility model embodiment 3；
Figure 15 is the separation figure of the power modules of the utility model embodiment 3；
Figure 16 is that the power module of the utility model embodiment 3 uses the schematic diagram of single side radiator structure；
Figure 16 (a) is the schematic diagram that power module uses single side radiator structure；
Figure 16 (b) is upper half-bridge current path figure；
Figure 16 (c) is lower half-bridge current path figure；
Figure 17 is that the power module of the utility model embodiment 3 uses the schematic diagram of two-side radiation structure；
Figure 18 is the structure chart of the power modules of the utility model embodiment 4；
Figure 19 is the partial enlarged view of the power modules of the utility model embodiment 4；
Figure 20 is the separation figure of the power modules of the utility model embodiment 4；
Figure 21 is that the power module of the utility model embodiment 4 uses the schematic diagram of single side radiator structure；
Figure 21 (a) is the schematic diagram that power module uses single side radiator structure；
Figure 21 (b) is upper half-bridge current path figure；
Figure 21 (c) is lower half-bridge current path figure；
Figure 22 is that the power module of the utility model embodiment 4 uses the schematic diagram of two-side radiation structure.
Specific embodiment
With reference to embodiment and attached drawing, the technical solution of the utility model is described further.
Embodiment 1：
Embodiment 1 discloses a kind of power modules with parallel installation electrode combination, as shown in Figs. 1-5, including having
The capacitance of capacitance electrode combination and the power module with power module electrode combination.Capacitance electrode combination includes the first capacitance electricity
Pole and the second capacitance electrode, the weld part 112 of the first capacitance electrode connect the cathode of capacitance core group 111, the second capacitance electrode
Weld part 113 connects the anode of capacitance core group 111, and the first capacitance electrode weld part 112 and the second capacitance electrode weld part 113 are
For plate and among capacitance side, the weld part 112 of the first capacitance electrode draws the connecting portion 114 of the first capacitance electrode,
The weld part 113 of second capacitance electrode draws the connecting portion 115 of the second capacitance electrode, the connecting portion 114 of the first capacitance electrode with
The 115 parallel face of connecting portion of second capacitance electrode and the connection of 114 to the second capacitance electrode of connecting portion of the first capacitance electrode
Portion 115 is grown, and is set on the first capacitance electrode connecting portion 114 there are two the first connecting hole 1141 and two the second connecting holes 1142,
Two the first connecting holes 1141 are arranged on what the first capacitance electrode connecting portion 114 was connected with the first capacitance electrode weld part 112 side by side
One end, two the second connecting holes 1142 are arranged on the other end of the first capacitance electrode connecting portion 114 side by side, and the second capacitance electrode connects
3rd connecting hole 1151 there are two being set in socket part 115.Power module electrode combination includes the first power module electrode and the second work(
Rate module electrodes, the weld part of the 118 and second power module electrode of weld part of the first power module electrode connect power respectively
The first power module electrode connecting portion 116 is drawn in the power supply layers of copper of inside modules, the first power module electrode welding portion 118, the
Draw the second power module electrode connecting portion 117, the connecting portion 116 of the first power module electrode in two power module electrode welding portions
With the 117 parallel face of connecting portion of the second power module electrode and 116 to the second power of connecting portion of the first power module electrode
The connecting portion 117 of module electrodes is grown, and is set in the first power module electrode connecting portion 116 and is connect hole 1161 and two there are two the 4th
5th connecting hole 1162, two the 4th connecting holes 1161 are arranged on the first power module electrode connecting portion 116 and the first power side by side
The connected one end of module electrodes weld part 118, two the 5th connecting holes 1162 are arranged on the first power module electrode connecting portion side by side
116 other end, sets that there are two the 6th connecting holes 1171 in the second power module electrode connecting portion 117.Wherein, the first connection
1141 and the 4th connecting hole 1161 of hole is all bigger than other connecting holes.
During use, usually capacitance and power module are fixed with bolt and nut, three are formed when fixed
Layer structure, as shown in Fig. 2, the first capacitance electrode connecting portion 114, the first power module electrode connecting portion 116 are located at both ends, the
Two capacitance electrode connecting portions 115 and the second power module electrode connecting portion 117 are respectively positioned on centre.When fixed can there are many
Mode, two of which mode are：1) nut is embedded in the first connecting hole 1141, the body of mating bolt runs through with the nut
5th connecting hole 1162 and the 3rd connecting hole 1151 are tight so as to be fixed with nut；Nut is embedded in the 4th connecting hole 1161, with
The body of the mating bolt of the nut runs through the second connecting hole 1142 and the 6th connecting hole 1171, tight so as to be fixed with nut.2)
Bolt head is embedded in the first connecting hole 1141, the body of bolt runs through the 5th connecting hole 1162 and the 3rd connecting hole 1151,
Nut is fixed tight at the 5th connecting hole 1162 with bolt；Bolt head is embedded in the 4th connecting hole 1161, the body of bolt
Through the second connecting hole 1142 and the 6th connecting hole 1171, nut is fixed tight at the second connecting hole 1142 with bolt.
Single side radiator structure or two-side radiation structure can be used inside power module, introduced separately below using single
The scheme of face radiator structure and two-side radiation structure.
1st, using single side radiator structure
If Fig. 6 (a), (b) are with shown in (c), single side radiator structure can be used inside power module, including upper half abutment plate
121 and lower half abutment plate 122, upper half abutment plate 121 is equipped with upper half-bridge igbt chip 1231 and upper half-bridge diode chip for backlight unit
1233, lower half abutment plate 122 is equipped with lower half-bridge igbt chip 1232 and lower half-bridge diode chip for backlight unit 1234, the first power module
Electrode is as positive electrode, and the second power module electrode is as negative electrode, in addition with output electrode 137.Upper half abutment plate 121 is
Three-decker, interlayer are upper half abutment plate insulating layers, and upper and lower two layers is upper half abutment sheetmetal layer.Lower half abutment plate 122 can
To be double-layer structure, above one layer be lower half abutment sheetmetal layer, below one layer be lower half abutment plate insulating layer 124.Lower half-bridge
Substrate 122 can also be three-decker, and intermediate one layer is lower half abutment plate insulating layer 124, and upper and lower two layers is lower half abutment sheet metal
Belong to layer.In order to preferably show the current path of upper and lower half-bridge, power module is split into Fig. 6 (b) and Fig. 6 (c).Wherein, scheme
6 (b) show half-bridge igbt chip 1231 open after operating current path, operating current connects from the first power module electrode
Socket part 116 flows into, and upper half abutment plate 121 is flowed by binding line, flows through after half-bridge igbt chip 1231 through binding line stream
Go out to output electrode 137.Fig. 6 (c) shows the freewheel current path after the shut-off of half-bridge igbt chip 1231, freewheel current
It is flowed into from the second power module electrode connecting portion 117, lower half abutment plate 122 is flowed by binding line, flows through lower half-bridge diode
Output electrode 137 is flowed out to by binding line after chip 1234.In addition, the work after lower half-bridge igbt chip 1232 is opened is electric
Flow path is：Operating current is flowed into from the second power module electrode connecting portion 117, and lower half abutment plate 122 is flowed by binding line,
It flows through and output electrode 137 is flowed out to by binding line after lower half-bridge igbt chip 1232；After lower half-bridge igbt chip 1232 turns off
Freewheel current path be：Freewheel current is flowed into from the first power module electrode connecting portion 116, and upper half-bridge is flowed by binding line
Substrate 121 flows through and flows out to output electrode 137 by binding line after half-bridge diode chip for backlight unit 1233.
2nd, using two-side radiation structure
As shown in fig. 7, two-side radiation structure can be used inside power module, including bottom substrate 131, Intermediate substrate 132
With head substrate 133, the layers of copper of 131 upper surface of bottom substrate is positive electrode layers of copper 1311, and there are two 133 lower surfaces of head substrate
Separated layers of copper is respectively negative electrode layers of copper 1331 and output electrode layers of copper 1332.Positive electrode layers of copper 1311 is equipped with upper half-bridge
Chip 1381 is equipped with the first link block 134, positive electrode layers of copper 1311 between upper half bridge chip 1381 and output electrode layers of copper 1332
On be additionally provided with Intermediate substrate 132, Intermediate substrate 132 is equipped with lower half bridge chip 1382, lower half bridge chip 1382 and negative electrode copper
The second link block 135 is equipped between layer 1331, and connecting pole is additionally provided between Intermediate substrate 132 and output electrode layers of copper 1332
136.First power module electrode is as positive electrode, and the second power module electrode is as negative electrode, in addition with output electrode
137.First power module electrode connecting portion 116 connection positive electrode layers of copper 1311, the second power module electrode connecting portion 117 connects
Negative electrode layers of copper 1331, output electrode connecting portion 1371 connect output electrode layers of copper 1332.When Fig. 7 also shows work and afterflow
When current path figure.During work, operating current is flowed into from the first power module electrode connecting portion 116, passes through positive electrode layers of copper
1311 flow into upper half bridge chip 1381, then flow to output electrode layers of copper 1332 by the first link block 134, finally by output electrode
Connecting portion 1371 flows out.During afterflow, freewheel current is flowed into from the second power module electrode connecting portion 117, passes through negative electrode layers of copper
1331 flow into the second link block 135, then flow to lower half bridge chip 1382, then flow to Intermediate substrate 132, then pass through connecting pole
136 flow into output electrode layers of copper 1332, are finally flowed out by output electrode connecting portion 1371.
The power module of the prior art as shown in figure 8, two power module electrode connecting portions are arranged side by side, between do not have
There is any overlapping.The present embodiment will be imitated using the power module of two-side radiation structure and the power module of the prior art
True comparison, simulation result are as shown in table 1.
1 embodiment 1 of table is using the power module of two-side radiation structure and the simulation comparison of the prior art
As shown in Table 1, the stray inductance of prior art power module is 12.99nH, and two-side radiation power module is miscellaneous
Scattered inductance is only that 3.28nH namely embodiment 1 greatly reduce stray inductance, this be also using it is this it is parallel installation electrode band come
Good effect.Stray inductance is vital parameter for power module, and the size of stray inductance directly influences power
The performance of module, it is however generally that, the stray inductance that can reduce several nH has been difficult that can reduce to incite somebody to action as the present embodiment
The breakthrough that nearly 10nH stray inductances are very difficult to！There is very important meaning to the development of power module industry！
Embodiment 2：
Embodiment 2 discloses a kind of power modules with parallel plug flat electrode combination, as shown in figure 9, including with electricity
Hold the capacitance of electrode combination and the power module with power module electrode combination.Capacitance electrode combination includes the of parallel face
One capacitance electrode 212 and the second capacitance electrode 213, the first capacitance electrode 212 and the second capacitance electrode 213 are plate and are located at
Among capacitance side, the first capacitance electrode 212 and the second capacitance electrode 213 connect the positive and negative anodes of capacitance core group 211 respectively, such as
Shown in Figure 10,212 part of the first capacitance electrode protrusion, also part is raised for the second capacitance electrode 213, the first capacitance electrode 212
Accommodating chamber is collectively formed in protrusion and the protrusion of the second capacitance electrode 213.Power module electrode combination includes the first power module electricity
Pole and the second power module electrode, the first power module electrode welding portion and the second power module electrode welding portion connect work(respectively
The power supply layers of copper of rate inside modules, the first power module electrode connecting portion 214 and the second power module electrode connecting portion 215 are flat
Row face, the first power module electrode connecting portion 214 and the second power module electrode connecting portion 215 are inserted into accommodating chamber.
Single side radiator structure or two-side radiation structure can be used inside power module, introduced separately below using single
The scheme of face radiator structure and two-side radiation structure.
1st, using single side radiator structure
If Figure 11 (a), (b) are with shown in (c), single side radiator structure can be used inside power module, including upper half abutment plate
221 and lower half abutment plate 222, upper half abutment plate 221 is equipped with upper half-bridge igbt chip 2231 and upper half-bridge diode chip for backlight unit
2233, lower half abutment plate 222 is equipped with lower half-bridge igbt chip 2232 and lower half-bridge diode chip for backlight unit 2234, the first power module
Electrode is as positive electrode, and the second power module electrode is as negative electrode, in addition with output electrode 237.Upper half abutment plate 221 is
Three-decker, interlayer are upper half abutment plate insulating layers, and upper and lower two layers is upper half abutment sheetmetal layer.Lower half abutment plate 222 can
To be double-layer structure, above one layer be lower half abutment sheetmetal layer, below one layer be lower half abutment plate insulating layer 224.Lower half-bridge
Substrate 222 can also be that one layer of three-decker centre is lower half abutment plate insulating layer 224, and upper and lower two layers is lower half abutment sheet metal
Belong to layer.In order to preferably show the current path of upper and lower half-bridge, power module is split into Figure 11 (b) and Figure 11 (c).Wherein,
Figure 11 (b) show half-bridge igbt chip 2231 open after operating current path, operating current from the first power module electricity
Pole connecting portion 214 flows into, and flows into upper half abutment plate 221 by binding line, passes through binding after flowing through half-bridge igbt chip 2231
Line flows out to output electrode 237.Figure 11 (c) shows the freewheel current path after the shut-off of half-bridge igbt chip 2231, afterflow
Electric current is flowed into from the second power module electrode connecting portion 215, is flowed into lower half abutment plate 222 by binding line, is flowed through lower half-bridge two
Output electrode 237 is flowed out to by binding line after pole pipe chip 2234.In addition, lower half-bridge igbt chip 2232 open after work
It is as current path：Operating current is flowed into from the second power module electrode connecting portion 215, and lower half abutment plate is flowed by binding line
222, it flows through and output electrode 237 is flowed out to by binding line after lower half-bridge igbt chip 2232；Lower half-bridge igbt chip 2232 closes
The freewheel current path having no progeny is：Freewheel current is flowed into from the first power module electrode connecting portion 214, is flowed by binding line
Half-bridge substrate 221 flows through and flows out to output electrode 237 by binding line after half-bridge diode chip for backlight unit 2233.
2nd, using two-side radiation structure
As shown in figure 12, two-side radiation structure can be used inside power module, including bottom substrate 231, Intermediate substrate 232
With head substrate 233, the layers of copper of 231 upper surface of bottom substrate is positive electrode layers of copper 2311, and there are two 233 lower surfaces of head substrate
Separated layers of copper is respectively negative electrode layers of copper 2331 and output electrode layers of copper 2332.Positive electrode layers of copper 2311 is equipped with upper half-bridge
Chip 2381 is equipped with the first link block 234, positive electrode layers of copper 2311 between upper half bridge chip 2381 and output electrode layers of copper 2332
On be additionally provided with Intermediate substrate 232, Intermediate substrate 232 is equipped with lower half bridge chip 2382, lower half bridge chip 2382 and negative electrode copper
The second link block 235 is equipped between layer 2331, and connecting pole is additionally provided between Intermediate substrate 232 and output electrode layers of copper 2332
236.First power module electrode is as positive electrode, and the second power module electrode is as negative electrode, in addition with output electrode
237.First power module electrode connecting portion 216 connection positive electrode layers of copper 2311, the second power module electrode connecting portion 217 connects
Negative electrode layers of copper 2331, output electrode connecting portion 2371 connect output electrode layers of copper 2332.When Figure 12 also shows work and continue
Current path figure during stream.During work, operating current is flowed into from the first power module electrode connecting portion 216, passes through positive electrode copper
Layer 2311 flows into upper half bridge chip 2381, then flow to output electrode layers of copper 2332 by the first link block 234, finally by output electricity
Pole connecting portion 2371 flows out.During afterflow, freewheel current is flowed into from the second power module electrode connecting portion 217, passes through negative electrode copper
Layer 2331 flows into the second link block 235, then flow to lower half bridge chip 2382, then flow to Intermediate substrate 232, then passes through company
It connects column 236 and flows into output electrode layers of copper 2332, finally flowed out by output electrode connecting portion 2371.
The power module of the prior art as shown in figure 8, two power module electrode connecting portions are arranged side by side, between do not have
There is any overlapping.The present embodiment will be imitated using the power module of two-side radiation structure and the power module of the prior art
True comparison, simulation result are as shown in table 2.
2 embodiment 2 of table is using the power module of two-side radiation structure and the simulation comparison of the prior art
As shown in Table 2, the stray inductance of prior art power module is 12.99nH, and two-side radiation power module is miscellaneous
Scattered inductance is only that 3.43nH namely embodiment 2 greatly reduce stray inductance, this be also using it is this it is parallel installation electrode band come
Good effect.Stray inductance is vital parameter for power module, and the size of stray inductance directly influences power
The performance of module, it is however generally that, the stray inductance that can reduce several nH has been difficult that can reduce to incite somebody to action as the present embodiment
The breakthrough that nearly 10nH stray inductances are very difficult to！There is very important meaning to the development of power module industry！
Embodiment 3：
Embodiment 3 discloses a kind of power modules with parallel coaxial installation electrode combination, as shown in figure 13, including tool
There are the capacitance that capacitance electrode combines and the power module with power module electrode combination.Capacitance electrode combination includes the first capacitance
Electrode and the second capacitance electrode.The weld part 313 of 312 and second capacitance electrode of weld part of first capacitance electrode connects electricity respectively
The positive and negative anodes of Rong Xin groups 311, the weld part 312 of the first capacitance electrode draw the connecting portion 314 of the first capacitance electrode, the second electricity
The weld part 313 for holding electrode draws the connecting portion 315 of the second capacitance electrode.First capacitance electrode weld part 312 and the second capacitance
Electrode welding portion 313 is plate and is located among capacitance side.First capacitance electrode connecting portion 314 and the second capacitance electrode connect
315 parallel face of socket part, as shown in figure 14, the first capacitance electrode connecting portion 314 are equipped with the first connecting hole 3141 and second and connect
Hole 3142 is connect, the second capacitance electrode connecting portion 315 is equipped with the 3rd connecting hole and the 4th connecting hole.Power module electrode combination bag
Include the first power module electrode and the second power module electrode.The weld part of first power module electrode and the second power module electricity
The weld part of pole connects the power supply layers of copper inside power module respectively, and the first power mould is drawn in the first power module electrode welding portion
The second power module electrode connecting portion 317, the first power are drawn by block electrode connecting portion 316, the second power module electrode welding portion
Module electrodes connecting portion 316 and 317 parallel face of the second power module electrode connecting portion, as shown in figure 15, the first power module
Electrode connecting portion 316 is equipped with the 5th connecting hole 3161 and the 6th connecting hole 3162, in the second power module electrode connecting portion 317
Equipped with the 7th connecting hole and the 8th connecting hole.Also, the first connecting hole 3141, the 5th connecting hole 3161, the 7th connecting hole and
Three connecting holes are coaxially disposed, and the second connecting hole 3142, the 6th connecting hole 3162, the 8th connecting hole and the 4th connecting hole are coaxial
It sets.
Single side radiator structure or two-side radiation structure can be used inside power module, introduced separately below using single
The scheme of face radiator structure and two-side radiation structure.
1st, using single side radiator structure
If Figure 16 (a), (b) are with shown in (c), single side radiator structure can be used inside power module, including upper half abutment plate
321 and lower half abutment plate 322, upper half abutment plate 321 is equipped with upper half-bridge igbt chip 3231 and upper half-bridge diode chip for backlight unit
3233, lower half abutment plate 322 is equipped with lower half-bridge igbt chip 3232 and lower half-bridge diode chip for backlight unit 3234, the first power module
Electrode is as positive electrode, and the second power module electrode is as negative electrode, in addition with output electrode 337.Upper half abutment plate 321 is
Three-decker, interlayer are upper half abutment plate insulating layers, and upper and lower two layers is upper half abutment sheetmetal layer.Lower half abutment plate 322 can
To be double-layer structure, above one layer be lower half abutment sheetmetal layer, below one layer be lower half abutment plate insulating layer 324.Lower half-bridge
Substrate 322 can also be three-decker, and intermediate one layer is lower half abutment plate insulating layer 324, and upper and lower two layers is lower half abutment sheet metal
Belong to layer.In order to preferably show the current path of upper and lower half-bridge, power module is split into Figure 16 (b) and Figure 16 (c).Wherein,
Figure 16 (b) show half-bridge igbt chip 3231 open after operating current path, operating current from the first power module electricity
Pole connecting portion 314 flows into, and flows into upper half abutment plate 321 by binding line, passes through binding after flowing through half-bridge igbt chip 3231
Line flows out to output electrode 337.Figure 16 (c) shows the freewheel current path after the shut-off of half-bridge igbt chip 3231, afterflow
Electric current is flowed into from the second power module electrode connecting portion 315, is flowed into lower half abutment plate 322 by binding line, is flowed through lower half-bridge two
Output electrode 337 is flowed out to by binding line after pole pipe chip 3234.In addition, lower half-bridge igbt chip 3232 open after work
It is as current path：Operating current is flowed into from the second power module electrode connecting portion 315, and lower half abutment plate is flowed by binding line
322, it flows through and output electrode 337 is flowed out to by binding line after lower half-bridge igbt chip 3232；Lower half-bridge igbt chip 3232 closes
The freewheel current path having no progeny is：Freewheel current is flowed into from the first power module electrode connecting portion 314, is flowed by binding line
Half-bridge substrate 321 flows through and flows out to output electrode 337 by binding line after half-bridge diode chip for backlight unit 3233.
2nd, using two-side radiation structure
As shown in figure 17, two-side radiation structure can be used inside power module, including bottom substrate 331, Intermediate substrate 332
With head substrate 333, the layers of copper of 331 upper surface of bottom substrate is positive electrode layers of copper 3311, and there are two 333 lower surfaces of head substrate
Separated layers of copper is respectively negative electrode layers of copper 3331 and output electrode layers of copper 3332.Positive electrode layers of copper 3311 is equipped with upper half-bridge
Chip 3381 is equipped with the first link block 334, positive electrode layers of copper 3311 between upper half bridge chip 3381 and output electrode layers of copper 3332
On be additionally provided with Intermediate substrate 332, Intermediate substrate 332 is equipped with lower half bridge chip 3382, lower half bridge chip 3382 and negative electrode copper
The second link block 335 is equipped between layer 3331, and connecting pole is additionally provided between Intermediate substrate 332 and output electrode layers of copper 3332
336.First power module electrode is as positive electrode, and the second power module electrode is as negative electrode, in addition with output electrode
337.First power module electrode connecting portion 316 connection positive electrode layers of copper 3311, the second power module electrode connecting portion 317 connects
Negative electrode layers of copper 3331, output electrode connecting portion 3371 connect output electrode layers of copper 3332.When Figure 17 also shows work and continue
Current path figure during stream.During work, operating current is flowed into from the first power module electrode connecting portion 316, passes through positive electrode copper
Layer 3311 flows into upper half bridge chip 3381, then flow to output electrode layers of copper 3332 by the first link block 334, finally by output electricity
Pole connecting portion 3371 flows out.During afterflow, freewheel current is flowed into from the second power module electrode connecting portion 317, passes through negative electrode copper
Layer 3331 flows into the second link block 335, then flow to lower half bridge chip 3382, then flow to Intermediate substrate 332, then passes through company
It connects column 336 and flows into output electrode layers of copper 3332, finally flowed out by output electrode connecting portion 3371.
The power module of the prior art as shown in figure 8, two power module electrode connecting portions are arranged side by side, between do not have
There is any overlapping.The present embodiment will be imitated using the power module of two-side radiation structure and the power module of the prior art
True comparison, simulation result are as shown in table 3.
3 embodiment 3 of table is using the power module of two-side radiation structure and the simulation comparison of the prior art
As shown in Table 3, the stray inductance of prior art power module is 12.99nH, and two-side radiation power module is miscellaneous
Scattered inductance is only that 3.27nH namely embodiment 3 greatly reduce stray inductance, this be also using it is this it is parallel installation electrode band come
Good effect.Stray inductance is vital parameter for power module, and the size of stray inductance directly influences power
The performance of module, it is however generally that, the stray inductance that can reduce several nH has been difficult that can reduce to incite somebody to action as the present embodiment
The breakthrough that nearly 10nH stray inductances are very difficult to！There is very important meaning to the development of power module industry！
Embodiment 4：
Embodiment 4 discloses a kind of power modules with cross arrangement electrode combination, as shown in figure 18, including having electricity
Hold the capacitance of electrode combination and the power module with power module electrode combination.Capacitance electrode combination includes the of parallel face
One capacitance electrode and the second capacitance electrode.First capacitance electrode and the second capacitance electrode are plate and are located in capacitance side
Between, the first capacitance electrode and the second capacitance electrode connect the positive and negative anodes of capacitance core group 411 respectively.As shown in Figures 18 and 19, first
Capacitance electrode weld part 412 draws multiple first capacitance electrode connecting portions 414, and the first capacitance electrode connecting portion 414 is equipped with the
One connecting hole 4141, the second capacitance electrode weld part 413 draw multiple second capacitance electrode connecting portions 415, the second capacitance electrode
Connecting portion 415 is equipped with the second connecting hole 4151, and the first capacitance electrode connecting portion 414 and the second capacitance electrode connecting portion 415 are flat
Row and cross arrangement.Power module electrode combination includes the first power module electrode and the second power module electrode.Such as Figure 20 institutes
Show, multiple first power module electrode connecting portions 416 are drawn in the first power module electrode welding portion, and the first power module electrode connects
Socket part 416 is equipped with the 3rd connecting hole 4161, and the second power module electrode welding portion draws multiple second power module electrodes and connects
Socket part 417, the second power module electrode connecting portion 417 are equipped with the 4th connecting hole 4171, the first power module electrode connecting portion
416 with the 417 parallel and cross arrangement of the second power module electrode connecting portion.Also, the first connecting hole 4141 and the 3rd connecting hole
4161 coaxial arrangements, the second connecting hole 4151 are coaxially disposed with the 4th connecting hole 4171.
Single side radiator structure or two-side radiation structure can be used inside power module, introduced separately below using single
The scheme of face radiator structure and two-side radiation structure.
1st, using single side radiator structure
If Figure 21 (a), (b) are with shown in (c), single side radiator structure can be used inside power module, including upper half abutment plate
421 and lower half abutment plate 422, upper half abutment plate 421 is equipped with upper half-bridge igbt chip 4231 and upper half-bridge diode chip for backlight unit
4233, lower half abutment plate 422 is equipped with lower half-bridge igbt chip 4232 and lower half-bridge diode chip for backlight unit 4234, the first power module
Electrode is as positive electrode, and the second power module electrode is as negative electrode, in addition with output electrode 437.Upper half abutment plate 421 is
Three-decker, interlayer are upper half abutment plate insulating layers, and upper and lower two layers is upper half abutment sheetmetal layer.Lower half abutment plate 422 can
To be double-layer structure, above one layer be lower half abutment sheetmetal layer, below one layer be lower half abutment plate insulating layer 424.Lower half-bridge
Substrate 422 can also be three-decker, and intermediate one layer is lower half abutment plate insulating layer 424, and upper and lower two layers is lower half abutment sheet metal
Belong to layer.In order to preferably show the current path of upper and lower half-bridge, power module is split into Figure 21 (b) and Figure 21 (c).Wherein,
Figure 21 (b) show half-bridge igbt chip 4231 open after operating current path, operating current from the first power module electricity
Pole connecting portion 414 flows into, and flows into upper half abutment plate 421 by binding line, passes through binding after flowing through half-bridge igbt chip 4231
Line flows out to output electrode 437.Figure 21 (c) shows the freewheel current path after the shut-off of half-bridge igbt chip 4231, afterflow
Electric current is flowed into from the second power module electrode connecting portion 415, is flowed into lower half abutment plate 42 by binding line, is flowed through lower two pole of half-bridge
Output electrode 437 is flowed out to by binding line after tube chip 4234.In addition, lower half-bridge igbt chip 4232 open after work
Current path is：Operating current is flowed into from the second power module electrode connecting portion 415, and lower half abutment plate is flowed by binding line
422, it flows through and output electrode 437 is flowed out to by binding line after lower half-bridge igbt chip 4232；Lower half-bridge igbt chip 4232 closes
The freewheel current path having no progeny is：Freewheel current is flowed into from the first power module electrode connecting portion 414, is flowed by binding line
Half-bridge substrate 421 flows through and flows out to output electrode 437 by binding line after half-bridge diode chip for backlight unit 4233.
2nd, using two-side radiation structure
As shown in figure 22, two-side radiation structure can be used inside power module, including bottom substrate 431, Intermediate substrate 432
With head substrate 433, the layers of copper of 431 upper surface of bottom substrate is positive electrode layers of copper 4311, and there are two 433 lower surfaces of head substrate
Separated layers of copper is respectively negative electrode layers of copper 4331 and output electrode layers of copper 4332.Positive electrode layers of copper 4311 is equipped with upper half-bridge
Chip 4381 is equipped with the first link block 434, positive electrode layers of copper 4311 between upper half bridge chip 4381 and output electrode layers of copper 4332
On be additionally provided with Intermediate substrate 432, Intermediate substrate 432 is equipped with lower half bridge chip 4382, lower half bridge chip 4382 and negative electrode copper
The second link block 435 is equipped between layer 4331, and connecting pole is additionally provided between Intermediate substrate 432 and output electrode layers of copper 4332
436.First power module electrode is as positive electrode, and the second power module electrode is as negative electrode, in addition with output electrode
437.First power module electrode connecting portion 416 connection positive electrode layers of copper 4311, the second power module electrode connecting portion 417 connects
Negative electrode layers of copper 4331, output electrode connecting portion 4371 connect output electrode layers of copper 4332.When Figure 22 also shows work and continue
Current path figure during stream.During work, operating current is flowed into from the first power module electrode connecting portion 416, passes through positive electrode copper
Layer 4311 flows into upper half bridge chip 4381, then flow to output electrode layers of copper 4332 by the first link block 434, finally by output electricity
Pole connecting portion 4371 flows out.During afterflow, freewheel current is flowed into from the second power module electrode connecting portion 417, passes through negative electrode copper
Layer 4331 flows into the second link block 435, then flow to lower half bridge chip 4382, then flow to Intermediate substrate 432, then passes through company
It connects column 436 and flows into output electrode layers of copper 4332, finally flowed out by output electrode connecting portion 4371.
The power module of the prior art as shown in figure 8, two power module electrode connecting portions are arranged side by side, between do not have
There is any overlapping.The present embodiment will be imitated using the power module of two-side radiation structure and the power module of the prior art
True comparison, simulation result are as shown in table 4.
4 embodiment 4 of table is using the power module of two-side radiation structure and the simulation comparison of the prior art
As shown in Table 4, the stray inductance of prior art power module is 12.99nH, and two-side radiation power module is miscellaneous
Scattered inductance is only that 3.62nH namely embodiment 4 greatly reduce stray inductance, this be also using it is this it is parallel installation electrode band come
Good effect.Stray inductance is vital parameter for power module, and the size of stray inductance directly influences power
The performance of module, it is however generally that, the stray inductance that can reduce several nH has been difficult that can reduce to incite somebody to action as the present embodiment
The breakthrough that nearly 10nH stray inductances are very difficult to！There is very important meaning to the development of power module industry.
Claims (6)
1. a kind of power modules with parallel coaxial installation electrode combination, it is characterised in that：Including being combined with capacitance electrode
Capacitance and with power module electrode combination power module；Capacitance electrode combination includes the first capacitance electrode and the second capacitance
The weld part of electrode, the weld part of the first capacitance electrode and the second capacitance electrode connects the positive and negative anodes of capacitance core group respectively, and first
The weld part of capacitance electrode draws the connecting portion of the first capacitance electrode, and the weld part of the second capacitance electrode draws the second capacitance electrode
Connecting portion, the connecting portion of the first capacitance electrode face parallel with the connecting portion of the second capacitance electrode and be respectively equipped with connecting hole,
Connecting hole on first capacitance electrode connecting portion and the connecting hole on the second capacitance electrode connecting portion are coaxial；Power module electrode group
Conjunction includes the first power module electrode and the second power module electrode, the weld part of the first power module electrode and the second power mould
The weld part of block electrode connects the power supply layers of copper inside power module respectively, and the first work(is drawn in the first power module electrode welding portion
The second power module electrode connecting portion, the first power mould are drawn by rate module electrodes connecting portion, the second power module electrode welding portion
The connecting portion of block electrode face parallel with the connecting portion of the second power module electrode and connecting hole is respectively equipped with, the first power module
Connecting hole in electrode connecting portion and the connecting hole in the second power module electrode connecting portion are coaxial；Power module electrode combination
The connecting portion that connecting portion can be combined with capacitance electrode is co-axially mounted.
2. the power modules according to claim 1 with parallel coaxial installation electrode combination, it is characterised in that：Described
The weld part of one capacitance electrode face parallel with the weld part of the second capacitance electrode is set.
3. the power modules according to claim 1 with parallel coaxial installation electrode combination, it is characterised in that：Described
One capacitance electrode weld part and the second capacitance electrode weld part it is each there are one, the first capacitance electrode connecting portion and the second capacitance electrode
Connecting portion has multiple.
4. the power modules according to claim 1 with parallel coaxial installation electrode combination, it is characterised in that：Described
One capacitance electrode weld part and the second capacitance electrode weld part are plate.
5. the power modules according to claim 1 with parallel coaxial installation electrode combination, it is characterised in that：Described
One capacitance electrode weld part and the second capacitance electrode welding position are among capacitance side.
6. the power modules according to claim 1 with parallel coaxial installation electrode combination, it is characterised in that：The work(
Rate inside modules are equipped with bottom substrate, Intermediate substrate and head substrate, and Intermediate substrate is set directly at bottom substrate upper surface.
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