CN1073911C - 抛光衬底上形成的介质层的装置 - Google Patents
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- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 238000005498 polishing Methods 0.000 title abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 26
- 239000011148 porous material Substances 0.000 claims description 6
- 238000003780 insertion Methods 0.000 claims description 5
- 230000037431 insertion Effects 0.000 claims description 5
- 239000011859 microparticle Substances 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 3
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005350 fused silica glass Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000005057 refrigeration Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 208000002925 dental caries Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
一种用来抛光半导体衬底顶面上沉积的介质层的装置,包括一工作台,一半导体衬底,一挂架,一导管,一管嘴,和一具备一底座、一电源、一空腔和一热延伸材料的驱动总成。驱动总成通过对热延伸材料施加电流来控制工作台的垂直方向位置。
Description
本发明涉及一种加工半导体的装置,特别是一种抛光衬底上形成的介质层的装置。
图1所示为一种抛光装置,可平整衬底上形成的绝缘层。如授予Seiichi Morimoto等人的美国专利NO.5,127,196所公开的名为“平整半导体衬底上形成的介质层的装置”。抛光装置100包括一工作台20,一半导体衬底23,一挂架24,一热交换器26,第一和第二导管32和36,一制冷单元35和一管嘴38。在抛光装置100中,半导体衬底23在平整时面朝下置于工作台20上。工作台20包括一个固定地贴附在其顶面的一衬垫21。衬垫21由多孔材料制成,与半导体衬底23上形成的介质层的上表面相接。多孔材料可吸收微粒物质,例如二氧化硅或其它研磨材料。
挂架24用来施加一向下的压力F1,作用于半导体衬底23的背部,衬底通过真空或仅通过湿表面张力与挂架24底部相接。还可设一嵌垫30,在半导体衬底23和挂架24之间起缓冲作用。一普通挡圈29用于防止半导体衬底23横向滑离挂架24。所施加的向下压力F1,一般为5磅每平方英寸的数量级,通过接在挂架24背部的轴27施加。此压力用于促进介质层上表面的研磨抛光。
同时,制冷单元35使冷却剂在流过第一导管32时冷却。第一导管32通过工作台20的内部以使工作台20的温度在抛光过程中可降至室温以下。在抛光装置100中,冷却剂包括普通的水,由制冷单元35控制其温度,以使工作台20的温度在整个抛光加工过程中保持在10度左右。制冷单元35还提供有使冷却剂循环通过第一导管32和工作台20的装置。
第二导管36在抛光处理过程中将研磨材料传输至衬垫21的表面。研磨材料最好由一种名为“浆液”的悬浮液来传输,以利于抛光加工。浆液经由第二导管36抽吸后,通过管嘴38被导向衬垫21的表面。
在操作过程中,挂架24相对于工作台20典型地以圆周运动方式旋转。此旋转运动通常由将一个普通电机连接到轴27上达到。并且,工作台20由公知机械装置来转动,以使抛光装置100平整在半导体衬底23上形成的介质层。
上述抛光装置的主要缺点之一在于,它不易精确控制其上被抛光的介质层的厚度,因为,它还需精确控制抛光时间和所施加的压力。
本发明的主要目的是提供一种能够控制被抛光的介质层的厚度的装置。
根据本发明提供了一种可在抛光过程中,精确控制沉积于半导体衬底顶面的介质层的厚度的抛光装置。它包括:一具有一顶面和一底面的工作台,所述的顶面具有可吸收微粒物质的多孔材料;半导体衬底的夹持装置,其中,所述的夹持装置包括一具有一顶面和一底面的挂架,一连接于挂架顶面的轴,一贴附于挂架底面的嵌垫和一沿底面外沿连接的挡圈,可夹持半导体衬底;将夹持装置移向工作台顶面的装置,并可在预定位置锁定夹持装置,从而使介质层置于工作台顶面以上的预定位置;向工作台顶面传输研磨材料的装置;使夹持装置旋转的装置,以使研磨材料和介质层之间产生摩擦;控制工作台的垂直方向位置的装置,其中所述的垂直方向位置控制装置与工作台底面相接;一空腔用以围绕垂直方向位置控制装置,其中所述的空腔由绝热材料制成,从而使空腔内的温度保持恒定。
在以下结合附图对较佳实施例的描述中,将体现出本发明的上述和其它目的及优点,其中:
图1代表现有技术的抛光装置的示意图。
图2提供了根据本发明的抛光装置的示意图。
图3描绘了介质层沉积后的半导体衬底的断面图。
图4表示根据本发明的抛光处理后的半导体衬底的断面图。
如图2,示出了根据本发明较佳实施例所述的抛光衬底上形成的介质层的装置。
抛光装置200由一具有一顶面和一底面221,222的工作220,和一用以夹持一半导体衬底300的挂架224所组成。该挂架224包括一挡圈229,一嵌垫230,一导管236,一管嘴238,和一驱动总成280,它包括一底座240,一热延伸材料250,一空腔254,一加热盘管256和一电源260。
在抛光装置200中,半导体衬底300在抛光处理时面朝下置于工作台220上。工作台220的顶面221由多孔材料制成,与半导体衬底300形成的介质层相接触。多孔材料可吸收微粒物质,例如二氧化硅或其它研磨材料。
半导体衬底300由具有一顶面和一底面的挂架24夹持。半导体衬底300通过真空或湿表面张力贴附于挂架224底面。挡圈229连接在挂架224底面外沿,以防止半导体衬底300横向滑离挂架224。嵌垫230贴附于挂架224底面的中心部位,在半导体衬底300和挂架224之间起缓冲作用。一轴227将挂架224的顶面与一电机270相连,以使挂架224可以预定位置沿轴227移向工作台220的顶面221。随后,由公知机械装置(未示出)将挂架224锁定于预定位置。
同时,在抛光处理时,导管236将研磨材料传输至工作台220的顶面221。此研磨材料最好由一种名为“浆液”的悬浮液来传输,以利于抛光处理。经由导管236抽吸后,浆液通过管嘴238被导引至工作台220的顶面221。
在操作过程中,挂架224相对于工作台220典型地以圆周运动方式旋转,从而在研磨材料和介质层之间产生摩擦。此旋转运动通常由与轴227相连的电机270来驱动。
驱动总成280与工作台220的底面222相连接,控制工作台220的垂直方向运动。热延伸材料250设置在底座240和工作台220的底面222之间。图3中的标记h表示将由抛光装置200抛光掉的介质层部分。
后附的表格绘制了工作台220的垂直方向运动和热延伸材料250之间的关系。如果热延伸材料由锆(Zr)制成,热延伸材料250的厚度是1cm,则温度每变化一度,工作台220移动420埃()。
电源260与加热盘管256相连接,向加热盘管供电,以使加热盘管256加热热延伸材料250。因此,热延伸材料250延伸与加热盘管256所供之热量对应的量。热延伸材料250由绝热材料制成的空腔254围绕,以防止热量散发,保持空腔254内温度恒定。
图3所示为抛光处理前,绝缘层330沉积后的半导体衬底的断面图。金属线320位于衬底310的平顶面上。金属线320由常规的光刻法形成。下一步,介质层330,例如由氧化硅制成的,在金属线320的顶部形成;而衬底310则使用例如化学汽相淀积法形成。介质层330的厚度最好大于金属线320的厚度。因金属线320位于衬底310的顶面,所形成的介质层330不会是平的。相应于金属线320的部位,介质层会有一轻微的凸起。因此,实际应用前介质层330必须抛光。标记h表示将被本装置抛光掉的绝缘层部分。
如图4,为图3所示的半导体衬底300依据本发明的抛光处理后的断面图。
与现有技术的抛光装置相比,本发明的装置包括一驱动总成280,可精确控制200的垂直方向位置,因此控制了抛光的介质层的厚度。这可通过利用热延伸材料250来完成。
通过对较佳实施例的图示和描述已示出了本发明,对所属技术领域的技术人员而言,在不脱离如所附的权利要求所述的本发明的精神和范围的情况下可作出多种变化和修改。
表 格
热延伸材料 | 热延伸系数 | 垂直方向运动速率 |
熔凝硅玻璃 | 0.5×10-6cm/cm·℃ | 50/cm·℃ |
锆(Zr) | 4.2×10-6cm/cm·℃ | 420/cm·℃ |
碳化硼(B4C) | 4.5×10-6cm/cm·℃ | 450/cm·℃ |
碳化硅(SiC) | 4.7×10-6cm/cm·℃ | 470/cm·℃ |
氧化铝(Al2O3) | 8.8×10-6cm/cm·℃ | 880/cm·℃ |
Claims (7)
1、一种抛光装置,可在对其抛光过程中精确控制半导体衬底顶面上沉积的介质层的厚度,它包括:
一具有一顶面和一底面的工作台,其中所述的顶面具有可吸收微粒物质的多孔材料;
夹持半导体衬底的装置,其中所述的夹持装置包括一具有一顶面和一底面的挂架;一轴连接于挂架的顶面,一嵌垫贴附于挂架的底面,一挡圈连接到挂架底面的外沿,以夹持半导体衬底;
向工作台顶面移动所述的夹持装置并在预定位置锁定该夹持装置的装置,以使介质层可置于距工作台顶面上的预定位置;
向工作台的顶面传输研磨材料的装置;
使夹持装置旋转的装置,以使研磨材料和介质层之间产生摩擦;
控制工作台垂直方向位置的装置,其中所述的垂直方向位置控制装置贴附于工作台的底面;以及
一空腔围绕垂直方向位置控制装置,其中该空腔由绝热材料制成,以使空腔内温度保持恒定。
2、如权利要求1所述的装置,其中所述的垂直方向位置控制装置包括:
一底座;
一设于底座和工作台底面之间的热延伸材料;
加热热延伸材料的装置。
3、如权利要求2所述的装置,加热装置包括一电源和一加热盘管。
4、如权利要求2所述的装置,其中该热延伸材料由氧化铝(Al2O3)制成。
5、如权利要求2所述的装置,其中该热延伸材料由锆(Zr)制成。
6、如权利要求2所述的装置,其中该热延伸材料由碳化硅(SiC)制成。
7、如权利要求2所述的装置,其中该热延伸材料由熔凝硅玻璃制成。
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KR1019950002765A KR100258802B1 (ko) | 1995-02-15 | 1995-02-15 | 평탄화 장치 및 그를 이용한 평탄화 방법 |
KR2765/1995 | 1995-02-15 |
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KR100835517B1 (ko) | 2003-12-26 | 2008-06-04 | 동부일렉트로닉스 주식회사 | 씨엠피 장비의 플래튼 장치 |
US7198548B1 (en) * | 2005-09-30 | 2007-04-03 | Applied Materials, Inc. | Polishing apparatus and method with direct load platen |
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SG11201703114QA (en) | 2014-10-17 | 2017-06-29 | Applied Materials Inc | Cmp pad construction with composite material properties using additive manufacturing processes |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
JP2016090439A (ja) * | 2014-11-06 | 2016-05-23 | 株式会社日本自動車部品総合研究所 | 粒子状物質検出素子及び粒子状物質検出センサ |
KR102609439B1 (ko) | 2015-10-30 | 2023-12-05 | 어플라이드 머티어리얼스, 인코포레이티드 | 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법 |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
JP7299970B2 (ja) | 2018-09-04 | 2023-06-28 | アプライド マテリアルズ インコーポレイテッド | 改良型研磨パッドのための配合物 |
CN112605847B (zh) * | 2020-11-23 | 2022-04-19 | 福建晶安光电有限公司 | 一种改进的晶片衬底抛光方法与装置 |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
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US5127196A (en) * | 1990-03-01 | 1992-07-07 | Intel Corporation | Apparatus for planarizing a dielectric formed over a semiconductor substrate |
DE69333322T2 (de) * | 1992-09-24 | 2004-09-30 | Ebara Corp. | Poliergerät |
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1995
- 1995-02-15 KR KR1019950002765A patent/KR100258802B1/ko not_active IP Right Cessation
- 1995-11-27 US US08/563,170 patent/US5664986A/en not_active Expired - Fee Related
- 1995-11-30 IN IN1546CA1995 patent/IN185476B/en unknown
- 1995-11-30 JP JP33578495A patent/JP2969071B2/ja not_active Expired - Lifetime
- 1995-12-08 CN CN95120467A patent/CN1073911C/zh not_active Expired - Fee Related
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EP0197214A2 (en) * | 1985-04-08 | 1986-10-15 | Rodel, Inc. | Carrier assembly for two-sided polishing operation |
US5103596A (en) * | 1990-11-05 | 1992-04-14 | Toshiba Kikai Kabushiki Kaisha | Method and apparatus for controlling cylinder grinding machines |
Also Published As
Publication number | Publication date |
---|---|
KR100258802B1 (ko) | 2000-06-15 |
JPH08229806A (ja) | 1996-09-10 |
US5664986A (en) | 1997-09-09 |
IN185476B (zh) | 2001-02-03 |
JP2969071B2 (ja) | 1999-11-02 |
KR960032635A (ko) | 1996-09-17 |
CN1132676A (zh) | 1996-10-09 |
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