CN107382364A - 一种轻量低损耗碳化硅系耐火材料及其制备方法 - Google Patents
一种轻量低损耗碳化硅系耐火材料及其制备方法 Download PDFInfo
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Abstract
本发明涉及了一种轻量低损耗碳化硅系耐火材料及其制备方法,以碳化硅粉和造孔剂为原料成型生坯,高温生成碳化硅烧结体,并在碳化硅烧结体表面包裹了一层致密硅膜层。造孔剂保证了碳化硅系耐火材料的较高的气孔率,增加了材料的抗热震性,减轻了材料重量,节省了原料成本。硅膜层能够有效隔绝其内部材料与外界氧气接触,因此显著提高了碳化硅耐火材料的抗氧化性能,材料是否致密并不影响材料的稳定性和使用寿命。所用镀膜方法已经是工艺非常成熟的常用镀膜技术,工艺稳定,控制简单,调控镀膜的厚度、密度或者镀膜材料都非常方便,有利于工业生产应用。
Description
技术领域
本发明涉及本发明涉及碳化硅系耐火材料,尤其涉及一种轻量低损耗碳化硅系耐火材料及其制备方法。
背景技术
SiC系耐火材料是人们早已知晓的一种优质耐火材料。具有强度高、导热系数大、抗震性好、耐磨损、抗侵蚀等优良高温性能,在冶金等工业部门有许多用途。尤其碳化硅还是极好的脱氧剂,用它可以加快炼钢速度,并便于控制化学成分,提高钢的质量。但是碳化硅的主要晶相是SiC,易氧化,为解决这个问题,人们采用了各种手段使碳化硅系耐火材料更加致密,减少材料内部与氧气接触的面积。
为了消除以上问题,人们还使用高强度且耐热性、耐氧化性及热传导性优良的含有Si作为金属Si相的含Si材料,如渗硅碳化硅耐火材料。即在重结晶碳化硅R-SiC的基础上进行液相或气相渗硅,R-SiC的气孔由游离硅填充,生成更加致密的渗硅碳化硅材料,不利于氧化发生,性能更加优良。但是降低气孔率,提高致密度会降低材料的抗热震系数,为保证优良的抗热震系数,传统的耐火材料一般都会保持20%左右的气孔率。
申请号为93112548.0的中国专利公开了一种高致密、低气孔率氮化硅-碳化硅-氧化物系统耐火材料,他通过添加氧化铝和氧化钇来结合SiC耐火材料,在致密度不降低的情况下提高了材料的抗热震系数,但是材料中氧化物的添加量在3-25wt%,而超过3%的氧化物添加量会使材料存在结合部的玻璃相增加,作为耐火材料必要的抗蠕变性降低,寿命缩短等一系列问题。
发明内容
为了解决上述技术问题,本发明提供了一种轻量低损耗碳化硅系耐火材料及其制备方法。
本发明的具体技术方案为:一种轻量低损耗碳化硅系耐火材料,以95-99wt%份碳化硅粉和1-5wt%造孔剂为原料成型生坯,高温生成碳化硅烧结体,在碳化硅烧结体表面包裹了一层致密硅膜层。
作为优选,所述的氮化硅系耐火材料由80-95wt%碳化硅、0.5-10wt%游离硅、0-5wt%游离碳、气孔和少量杂质组成。
作为优选,所述的硅膜层厚度在2-20μm。
作为优选,所述的造孔剂为生物质基造孔剂。
作为优选,所述的造孔剂为稻壳粉末。
作为优选,所述的烧结温度为2000-2050℃。
与现有技术对比,本发明的有益效果是:利用造孔剂保证了碳化硅系耐火材料的较高的气孔率,增加了材料的抗热震性,减轻了材料重量,节省了原料成本。材料不含氧化铝等氧化物,有好的抗蠕变性。造孔剂使用的是生物质造孔剂,尤其是稻壳作为碾米厂的加工副产品,约占稻谷总产量的20%,资源分布广泛且产量丰富,将稻壳作为烧结制品的造孔剂不仅有效的利用了粮食行业的副产品,而且提高了烧结制品的新能和产品附加值。同时,由于材料表面存在一层致密的硅膜层,防止碳化硅材料内部氧化,同时,硅膜层的表面在高温下也会氧化成SiO2,会使材料的抗氧化性能更加优异,这个过程还会促进炼钢过程中的脱氧,加快炼钢速度,提高钢的质量,因此材料是否致密并不影响材料的稳定性和使用寿命。
上述轻量低损耗碳化硅系耐火材料的制备方法是,以碳化硅粉和造孔剂为原料成型生坯,高温生成碳化硅烧结体,采用物理气相沉积法,在镀膜机中沉积硅膜层。
作为优选,所述的物理气相沉积法包括真空蒸镀、溅射镀膜、等离子体镀膜和离子镀。
作为优选,所述的镀膜机为真空离子镀膜机,利用电子束蒸发磁控溅射,或多弧蒸发离化技术沉积硅膜层。
与现有技术对比,本发明的有益效果是:这种镀膜方法已经是工艺非常成熟的常用镀膜技术,工艺稳定,控制简单,调控镀膜的厚度、密度或者镀膜材料都非常方便,有利于工业生产应用。
具体实施方式
下面结合实施例对本发明作进一步的描述。
实施例1
按照配方称取95wt%碳化硅粉和5wt%稻谷粉末,在2000℃高温烧结,生成碳化硅烧结体,冷却后破碎成颗粒,将颗粒放入真空离子镀膜机的真空腔体,沉积硅膜层,厚度为6μm。
实施例2
按照配方称取原99wt%碳化硅粉和1wt%稻谷粉末,在2050℃高温烧结,生成碳化硅烧结体,冷却后破碎成颗粒,将颗粒放入真空离子镀膜机的真空腔体,沉积硅膜层,厚度为16μm。
实施例3
按照配方称取98wt%碳化硅粉和2wt%稻谷粉末,在2000℃高温烧结,生成碳化硅烧结体,冷却后破碎成颗粒,将颗粒放入真空离子镀膜机的真空腔体,沉积硅膜层,厚度为20μm。
实施例4
按照配方称取96wt%碳化硅粉和4wt%稻谷粉末,在2050℃高温烧结,生成碳化硅烧结体,冷却后破碎成颗粒,将颗粒放入真空离子镀膜机的真空腔体,沉积硅膜层,厚度为2μm。
本发明中所用原料、设备,若无特别说明,均为本领域的常用原料、设备;本发明中所用方法,若无特别说明,均为本领域的常规方法。
以上所述,仅是本发明的较佳实施例,并非对本发明作任何限制,凡是根据本发明技术实质对以上实施例所作的任何简单修改、变更以及等效变换,均仍属于本发明技术方案的保护范围。
Claims (9)
1.一种轻量低损耗碳化硅系耐火材料,其特征在于:以95-99wt%份碳化硅粉和1-5wt%造孔剂为原料成型生坯,高温生成碳化硅烧结体,在碳化硅烧结体表面包裹了一层致密硅膜层。
2.如权利要求1所述的轻量低损耗碳化硅系耐火材料,其特征在于,所述的氮化硅系耐火材料由80-95wt%碳化硅、0.5-10wt%游离硅、0-5wt%游离碳、气孔和少量杂质组成。
3.如权利要求1所述的轻量低损耗碳化硅系耐火材料,其特征在于,所述的硅膜层厚度在2-20μm。
4.如权利要求1所述的轻量低损耗碳化硅系耐火材料,其特征在于,所述的造孔剂为生物质基造孔剂。
5.如权利要求1所述的轻量低损耗碳化硅系耐火材料,其特征在于,所述的造孔剂为稻壳粉末。
6.如权利要求1所述的轻量低损耗碳化硅系耐火材料,其特征在于,所述的烧结温度为2000-2050℃。
7.一种如权利要求1所述的轻量低损耗碳化硅系耐火材料的制备方法,其特征在于,以碳化硅粉和造孔剂为原料成型生坯,高温生成碳化硅烧结体,采用物理气相沉积法,在镀膜机中沉积硅膜层。
8.如权利要求7所述的轻量低损耗碳化硅系耐火材料的制备方法,其特征在于,所述的物理气相沉积法包括真空蒸镀、溅射镀膜、等离子体镀膜和离子镀。
9.如权利要求7所述的轻量低损耗碳化硅系耐火材料的制备方法,其特征在于,所述的镀膜机为真空离子镀膜机,利用电子束蒸发磁控溅射,或多弧蒸发离化技术沉积硅膜层。
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